Relevant bibliographies by topics / Bandgap reference (BGR)

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Academic literature on the topic 'Bandgap reference (BGR)'

Author: Grafiati
Published: 4 June 2021
Last updated: 10 February 2022

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Journal articles on the topic "Bandgap reference (BGR)"

1

Zhou, Qian Neng, Yun Song Li, Jin Zhao Lin, Hong Juan Li, Chen Li, Yu Pang, Guo Quan Li, Xue Mei Cai, and Qi Li. "A High-Order CMOS Bandgap Voltage Reference." Advanced Materials Research 989-994 (July 2014): 1165–68. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.1165.

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A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.
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Zhou, Qian Neng, Rong Xue, Hong Juan Li, Jin Zhao Lin, Yun Song Li, Yu Pang, Qi Li, Guo Quan Li, and Lu Deng. "A Sub-1V High Precision CMOS Bandgap Reference." Applied Mechanics and Materials 427-429 (September 2013): 1097–100. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.1097.

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In this paper, a low temperature coefficient bandgap voltage (BGR) is designed for A/D converter by adopting piecewise-linear compensation technique. The designed BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the PSRR of the designed BGR achieves-72.51dB, -72.49dB, and-70.58dB at 10Hz, 100Hz and 1kHz respectively. The designed BGR achieve the temperature coefficient of 1.57 ppm/°C when temperature is in the range from-35°C to 125°C. When power supply voltage VDD changes from 1V to 7V, the deviation of the designed BGR output voltage VREF is only 4.465μV.
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Saponara, Sergio. "Integrated Bandgap Voltage Reference for High Voltage Vehicle Applications." Journal of Circuits, Systems and Computers 24, no. 08 (August 12, 2015): 1550125. http://dx.doi.org/10.1142/s021812661550125x.

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This work presents a bandgap voltage reference (BGR) integrated in 0.25-μm bipolar-CMOS-DMOS (BCD) technology. The BGR circuit generates a reference voltage of 1.22 V. It is able to withstand large supply voltage variations of vehicle applications from 4.5 V, e.g., in case of cranking, up to 60-V, maximum value in case of emerging 48-V battery systems for hybrid and electrical vehicles. The circuit has an embedded high-voltage (HV) pseudo-regulator block that provides a more stable internal supply rail for a cascaded low-voltage bandgap core. HV MOS are used only in the pre-regulator block thus allowing the design of a BGR with compact size. The proposed architecture permits to withstand large input voltage variations with a temperature drift of a hundred of ppm/°C, a line regulation (LR) of few mV/V versus the external supply voltage and a power supply rejection ratio (PSRR) higher than 90 dB.
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SAPONARA, SERGIO, LUCA FANUCCI, TOMMASO BALDETTI, and ENRICO PARDI. "BANDGAP VOLTAGE REFERENCE IC FOR HV AUTOMOTIVE APPLICATIONS WITH PSEUDO-REGULATED BIAS AND SERVICE REGULATOR." Journal of Circuits, Systems and Computers 22, no. 01 (January 2013): 1250069. http://dx.doi.org/10.1142/s0218126612500697.

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The paper presents a bandgap voltage reference (BGR) implemented in TSMC 0.25 μm BCD technology for an automotive application. To withstand a car's battery large voltage variations, from 5 V to 40 V, the circuit features an embedded pseudo-regulator providing a stable bias current for the bandgap core. High-voltage (HV) MOS count has been kept low thus allowing the design of a compact BGR with an area of 0.118 mm2. The BGR has been designed to operate in automotive extended temperature range (-40°C to 150°C) and it provides a stable voltage of 1.21 V, which is also used as reference for a cascade 3.7 V linear regulator. Measurements carried on fabricated IC samples prove the effectiveness of the BGR design in terms of supported input voltage variations and operating temperature range, temperature drift, line regulation and PSRR performance.
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5

Zhou, Ze-kun, Hongming Yu, Yue Shi, Zhuo Wang, and Bo Zhang. "A High-Precision Bandgap Voltage Reference with Automatic Curvature-Compensation Technique." Journal of Circuits, Systems and Computers 28, no. 13 (January 8, 2019): 1950214. http://dx.doi.org/10.1142/s0218126619502141.

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A high-precision bandgap voltage reference (BGR) with a novel curvature-compensation scheme is proposed in this paper. The temperature coefficient (TC) can be automatically optimized with a built-in adaptive curvature-compensation technique, which is realized in a digitization control way. An exponential curvature-compensation method is first adopted to reduce the TC in a certain degree, especially in low temperature range. Then, the temperature drift of BGR in higher temperature range can be further minimized by dynamic zero-temperature-coefficient point tracking (ZTCPT) with temperature changes. With the help of proposed adaptive signal processing, the output voltage of BGR can approximately maintain zero TC in a wider temperature range. Verification results of the BGR proposed in this paper, which is implemented in 0.35-[Formula: see text]m BiCMOS process, illustrate that the TC of 1.4[Formula: see text]ppm/∘C is realized under the power supply voltage of 3[Formula: see text]V and the power supply rejection of the proposed circuit is [Formula: see text][Formula: see text]dB without any filter capacitor.
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6

Agarwal, Neeru, Neeraj Agarwal, Chih-Wen Lu, and Masahito Oh-e. "A Chopper-Embedded BGR Composite Noise Reduction Circuit for Clock Generator." Electronics 10, no. 18 (September 14, 2021): 2257. http://dx.doi.org/10.3390/electronics10182257.

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A chopper-embedded bandgap reference (BGR) scheme is presented using 0.18 μm CMOS technology for low-frequency noise suppression in the clock generator application. As biasing circuitry produces significant flicker noise, along with thermal noise from passive components, the proposed low-noise chopper-stabilized BGR circuit was designed and implemented for wide temperature range from −40 to 125 °C, including a startup and self-biasing circuit to reduce critical low-frequency noise from the bias circuitry and op amp input offset voltage. The BGR circuit generated a reference voltage of 1.25 V for a supply voltage range of 2.5–3.3 V. The gain of the implemented BGR operational transconductance amplifier is 84.1 dB. A non-overlapping clock circuit was implemented to reduce the clock skew effect, which is also one of the noise contributors. The noise analysis of a chopped bandgap voltage reference was evaluated through cadence periodic steady-state (PSS) analysis and periodic noise (PNoise) analysis. The low-frequency flicker noise was reduced from 1.5 to 0.4 μV/sqrt(Hz) at 1 KHz, with the proposed chopping scheme in the bandgap. Comparisons of the noise performance of the chopper-embedded BGR, with and without a low-pass filter, were also performed, and the results show a further reduction in the overall noise. A reduction in the flicker noise, from 181.3 to 10.26 mV/sqrt(Hz) at 100 KHz, was observed with the filter. All circuit blocks of the proposed BGR scheme were designed and simulated using the EDA tool HSPICE, and layout generation was carried out by Laker. The BGR architecture layout dimensions are 285.25 μm × 125.38 μm.
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7

Xu, Jiangtao, Yawei Wang, Minshun Wu, Ruizhi Zhang, Sufen Wei, Guohe Zhang, and Cheng-Fu Yang. "A High-Accuracy Ultra-Low-Power Offset-Cancelation On-Off Bandgap Reference for Implantable Medical Electronics." Electronics 8, no. 7 (July 21, 2019): 814. http://dx.doi.org/10.3390/electronics8070814.

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An ultra-low-power and high-accuracy on-off bandgap reference (BGR) is demonstrated in this paper for implantable medical electronics. The proposed BGR shows an average current consumption of 78 nA under 2.8 V supply and an output voltage of 1.17 V with an untrimmed accuracy of 0.69%. The on-off bandgap combined with sample-and-hold switched-RC filter is developed to reduce power consumption and noise. The on-off mechanism allows a relatively higher current in the sample phase to alleviate the process variation of bipolar transistors. To compensate the error caused by operational amplifier offset, the correlated double sampling strategy is adopted in the BGR. The proposed BGR is implemented in 0.35 μm standard CMOS process and occupies a total area of 0.063 mm2. Measurement results show that the circuit works properly in the supply voltage range of 1.8–3.2 V and achieves a line regulation of 0.59 mV/V. When the temperature varies from −20 to 80 °C, an average temperature coefficient of 19.6 ppm/°C is achieved.
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8

Liu, Quanwang, Bo Zhang, Shaowei Zhen, Weidong Xue, and Ming Qiao. "A 2.6 ppm/°C 2.5 V Piece-Wise Compensated Bandgap Reference with Low Beta Bipolar." Electronics 8, no. 5 (May 17, 2019): 555. http://dx.doi.org/10.3390/electronics8050555.

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Traditional bandgap reference (BGR) is sensitive to process variation and is not suitable for mass production. Consequently, a stacked piece-wise compensated bandgap reference (SPWBGR) with low beta bipolar is proposed, designed and fabricated in the 0.18 μm high-voltage (HV) BCD process. Two stacked BGR (SBGR) cores make up the proposed BGR circuit. Through setting the target reference voltage near the output voltage of SBGR cores, the feedback resistor ratio is reduced and the base current side-effect is significantly decreased. Notably, the SBGR core is implemented by the low beta npn bipolar and it relaxes the requirement for the high beta bipolar. The two SBGR cores are almost identical except for the temperature slope and feedback ratio. The two cores have different zero temperature coefficient (TC) points, one is set at −5 °C, and the other is set at 60 °C, named as SBGRA and SBGRB, respectively. The SBGRA and SBGRB output the same voltage at their zero TC point. The higher voltage of SBGRA and SBGRB is the output voltage. Through the process of tracking the maximum value of different SBGR cores, the proposed SPWBGR achieves 2.6 ppm/°C TC from −40 to 100 °C. As a result, the average TC for five random samples is 5.3 ppm/°C. The line regulation is 2 mV/V from 4.5 to 5.5 V power supply. The current consumption is 6.8 µA. The active area of the proposed BGR is 0.075 mm2.
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9

Zhao, Gongyuan, Mao Ye, Yiqiang Zhao, Kai Hu, and Ruishan Xin. "A High Order Curvature-Compensated Bandgap Voltage Reference with a Novel Error Amplifier." Journal of Circuits, Systems and Computers 26, no. 09 (April 24, 2017): 1750127. http://dx.doi.org/10.1142/s0218126617501274.

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This paper presents a bandgap voltage reference (BGR), utilizing high order curvature-compensated technique with the temperature dependent resistor. Based on an improved error amplifier, [Formula: see text]80[Formula: see text]dB power supply rejection (PSR) @1[Formula: see text]kHz is achieved without additional complicated circuits. The circuit is fabricated in a standard [Formula: see text]m CMOS process, consuming 50[Formula: see text][Formula: see text]A at 25[Formula: see text]C with a supply voltage of 3.3[Formula: see text]V. Simulation results show that the proposed BGR can achieve a temperature coefficient as low as 1.18[Formula: see text]ppm/[Formula: see text]C over the temperature range from [Formula: see text]C to 120[Formula: see text]C. Monte Carlo simulation and Experimental Results validate the design.
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10

Qiu, Jinpeng, Tong Liu, Xubin Chen, Yongheng Shang, Jiongjiong Mo, Zhiyu Wang, Hua Chen, Jiarui Liu, Jingjing Lv, and Faxin Yu. "A New Digital to Analog Converter Based on Low-Offset Bandgap Reference." Journal of Electrical and Computer Engineering 2017 (2017): 1–10. http://dx.doi.org/10.1155/2017/1658695.

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This paper presents a new 12-bit digital to analog converter (DAC) circuit based on a low-offset bandgap reference (BGR) circuit with two cascade transistor structure and two self-contained feedback low-offset operational amplifiers to reduce the effects of offset operational amplifier voltage effect on the reference voltage, PMOS current-mirror mismatch, and its channel modulation. A Start-Up circuit with self-bias current architecture and multipoint voltage monitoring is employed to keep the BGR circuit working properly. Finally, a dual-resistor ladder DAC-Core circuit is used to generate an accuracy DAC output signal to the buffer operational amplifier. The proposed circuit was fabricated in CSMC 0.5 μm 5 V 1P4M process. The measured differential nonlinearity (DNL) of the output voltages is less than 0.45 LSB and integral nonlinearity (INL) less than 1.5 LSB at room temperature, consuming only 3.5 mW from a 5 V supply voltage. The DNL and INL at −55°C and 125°C are presented as well together with the discussion of possibility of improving the DNL and INL accuracy in future design.
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Dissertations / Theses on the topic "Bandgap reference (BGR)"

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Thomas, Dylan Buxton. "Silicon-germanium devices and circuits for high temperature applications." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33949.

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Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of SiGe technology for cryogenic and radiation-intense environments is well known, yet SiGe has been generally overlooked for applications involving extreme high temperature operation. This work is an investigation into the potential capabilities of SiGe technology for operation up to 300°C, including the development of packaging and testing procedures to enable the necessary measurements. At the device level, SiGe heterojunction bipolar transistors (HBTs), field-effect transistors (FETs), and resistors are verified to maintain acceptable functionality across the temperature range, laying the foundation for high temperature circuit design. This work also includes the characterization of existing bandgap references circuits, redesign for high temperature operation, validation, and further optimization recommendations. In addition, the performance of temperature sensor, operational amplifier, and output buffer circuits under extreme high temperature conditions is presented. To the author's knowledge, this work represents the first demonstration of functional circuits from a SiGe technology platform in ambient temperatures up to 300°C; furthermore, the optimized bandgap reference presented in this work is believed to show the best performance recorded across a 500°C range in a bulk-silicon technology platform.
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Cardoso, Adilson Silva. "Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53099.

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State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented.
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Book chapters on the topic "Bandgap reference (BGR)"

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Akshaya, R., and Siva Yellampalli. "Analysis and Design of Bandgap Reference (BGR)." In Lecture Notes in Electrical Engineering, 413–50. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8234-4_35.

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