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1
Kevin, Tom. "Sub-1V Curvature Compensated Bandgap Reference." Thesis, Linköping University, Department of Electrical Engineering, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-2585.
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<p>This thesis investigates the possibility of realizing bandgap reference crcuits for processes having sub-1V supply voltage. With the scaling of gate oxide thickness supply voltage is getting reduced. But the threshold voltage of transistors is not getting scaled at the same rate as that of the supply voltage. This makes it difficult to incorporate conventional designs of bandgap reference circuits to processeshaving near to 1V supply voltage. In the first part of the thesis a comprehensive study on existing low voltage bandgap reference circuits is done. Using these ideas a low-power, low-voltage bandgap reference circuit is designed in the second part of the thesis work. </p><p>The proposed bandgap reference circuit is capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18µm standard CMOS technology and operates with 0.9V supply voltage, consuming 5µA current. The circuit achieves 7 ppm/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60C.</p>
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Digvadekar, Ashish A. "A sub 1 V bandgap reference circuit /." Online version of thesis, 2005. https://ritdml.rit.edu/dspace/handle/1850/2595.
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Sanikommu, Ramanarayana Reddy. "Design and Implementation of Bandgap Reference Circuits." Thesis, Linköping University, Department of Electrical Engineering, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-398.
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<p>An important part in the design of analog integrated circuits is to create reference voltages and currents with well defined values. To accomplish this on-chip, so called bandgap reference circuits are commonly used. A typical application for reference voltages is in analog-to-digital conversion, where the input voltage is compared to several reference levels in order to determine the corresponding digital value. The emphasis in this thesis work lies on theoretical understanding of the performance limitations as well as the design of a bandgap reference circuit, BGR.</p><p>In this project, a comprehensive study of bandgap circuits is done in the first stage. Then investigations on parameter variations like Vdd, number of bipolars, W/L of PMOS, DC gain of Opamp, RL and CL are done for a PTAT current generator circuit. This PTAT current generator circuit is a part of the implemented BGR circuit based on [10], which is capable of producing an output reference voltage of 0.75 V when the supply voltage is 1 V. All of these circuits are implemented in a 0.35u CMOS technology.</p>
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Knop, Jaroslav. "Nízkošumový referenční zdroj typu bandgap." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-217239.
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This work deals with principles of design low noise bandgap reference using multiple in the process EPI92. The voltage reference is described and theoretic analysis noise performances is made. Results are compared with measured data realized breadboard BG reference and fabricated low drop-out regulators, which using different accurate bandgap references cells.
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Chan, Yiu Fai. "A new curvature-compensation technique for bandgap voltage reference." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0003/MQ28924.pdf.
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Herbst, Steven (Steven G. ). "A low-noise bandgap voltage reference employing dynamic element matching." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/77071.
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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 109).<br>Bandgap voltages references are widely used in IC design, but are sensitive to low-frequency noise and component mismatch. This thesis describes the design and testing of a new IC voltage reference that targets these issues through three dynamic element matching (DEM) subsystems. The first is a chopper OTA, and the second two are component rotation schemes: one to exchange the positions of two critical resistors, and the second to cycle through all BJTs, periodically selecting each to participate as the "1" transistor of the N:1 bandgap ratio. Practical designs that address the various switching issues typically associated with DEM, such as glitch and clock drift, are described. Analytic expressions for the effects of noise and mismatch throughout the bandgap reference are derived, along with expressions for calculating the improvement that can be achieved by DEM. A test chip was implemented in a 0.25[mu]m BiCMOS process; with its three DEM subsystems enabled it is shown to achieve a 20x 1/f noise improvement and a 34x mismatch error improvement.<br>by Steven Herbst.<br>M.Eng.
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Gupta, Vishal. "An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-07052007-073154/.
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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Ayazi, Farrokh, Committee Member ; Rincon-Mora, Gabriel, Committee Chair ; Bhatti, Pamela, Committee Member ; Leach, W. Marshall, Committee Member ; Morley, Thomas, Committee Member.
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Sundar, Siddharth. "A low power high power supply rejection ratio bandgap reference for portable applications." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/46517.
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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.<br>Includes bibliographical references (p. 86-87).<br>A multistage bandgap circuit with very high power supply rejection ratio was designed and simulated. The key features of this bandgap include multiple power modes, low power consumption and a novel resistor trimming strategy. This design was completed in deep submicron CMOS technology, and is especially suited for portable applications. The bandgap designed achieves over 90 dB of power supply rejection and less than 17 microvolts of noise without any external filtering. With an external filtering capacitor, this performance is significantly enhanced. In addition, the design includes an efficient voltage-to-current converter and a fast-charge circuit for charging the external capacitor.<br>by Siddharth Sundar.<br>M.Eng.
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Kacafírek, Jiří. "Návrh přesné napěťové reference v ACMOS procesu." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218682.
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In this thesis the principle of voltage reference especially bangap reference is described. Below are described two circuits of this type designed in ACMOS process. There is handmade evaluation of error analysis to identify main error contributors and also monte-carlo simulation. Also statistical analysis is made on the circuit. Results of all methods are compared. Error of reference voltage is compared for both circuits. Circuit with bigger error is optimized to achieve a better precision. Obtained results showed a good agreement of all methods, which evidences importance of hand error evaluation.
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Kotrč, Václav. "Napěťové reference v bipolárním a CMOS procesu." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221111.
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This diploma thesis deals with precise design of Brokaw BandGap voltage reference comparing with MOS references. There is STEP BY STEP separation and analysis of proposed devices, using Monte Carlo analysis. There are also presented the methods for achieving a lower deviation of the output voltage for yielding device, which needs no trimming.
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Silva, João Gonçalo Clemente da. "Project of a bandgap voltage reference and a temperature sensor for "energy harvest" systems." Master's thesis, Faculdade de Ciências e Tecnologia, 2013. http://hdl.handle.net/10362/11330.
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Dissertação para obtenção do Grau de Mestre em
Engenharia Electrotécnica e Computadores<br>The objective of this thesis is to study the behaviour of a bandgap voltage reference
and develop it in order to be more efficient than the existing ones. In this case having
applicability in energy harvest, the main approach for this circuit is to reduce the power
dissipation and at the same time guarantee a stable of the reference voltage. This can be
achieved through the utilization of MOS transistors which can work with a lower voltage
then bipolar transistors. The reference voltage circuit present in this thesis can work with
a supply voltage as low as 500 mV.
In energy harvest systems besides the need to work with extremely low voltages, the
sensitivity of the signals is very high, to temperature variation. So it was also important
to work with an extended ranges of temperature.
For this work it was also developed a temperature sensor so that it has applicability in
various fields. The sensor works by currents generated by the bandgap voltage reference,
having similar results to a dual slope integrating analogue-to-digital converter, although
its operation and logic are quite different.
The proposed solution is to implement a reference voltage generator powered by a
voltage source of 500 mV, with a consumption of about 7 W. Having a temperature
coefficient slightly below 74 ppm/ C and a temperature sensor with linearity quite satisfactory.
12
Komark, Stina. "Design of an integrated voltage regulator." Thesis, Linköping University, Department of Electrical Engineering, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1711.
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<p>Many analog systems need a stable power supply voltage that does not vary with temperature and time in order to operate properly. In a battery operated system the battery voltage is not stable, e.g. it decreases with decreasing temperature and with ageing. In that case a voltage regulator must be used, that regulates the battery voltage and generates a stable supply voltage to power other circuitry. </p><p>In this thesis a voltage regulator to be used in a battery operated system has been designed which meets the given specification of stability and power capabilities. A voltage reference, which is a commonly used devise in analog circuits, was also designed. The role of a reference voltage in an electrical system is the same as for a tuning fork in a musical ensemble; to set a standard to which other voltages are compared. </p><p>A functionality to detect when the lifetime of the battery is about to run out was also developed.</p>
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Souza, Flávio Queiroz de [UNESP]. "Projeto de uma referência de tensão com baixa susceptibilidade a interferência eletromagnética (EMI)." Universidade Estadual Paulista (UNESP), 2011. http://hdl.handle.net/11449/87063.
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souza_fq_me_ilha.pdf: 803035 bytes, checksum: 9aab0ce0802cfc37e761960c21f93140 (MD5)<br>Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)<br>Referências de tensão integradas com baixa sensibilidade à temperatura, tensão de a- limentação e eventos transitórios são componentes críticos na maioria dos circuitos integra- dos. Neste trabalho, além das restrições costumeiras, foi adicionada a preocupação com a in- terferência eletromagnética a qual vem ganhando muita importância devido a crescente polui- ção eletromagnética no ambiente. Assim, neste trabalho, propõe-se o projeto de uma referên- cia de tensão tipo bandgap com baixa susceptibilidade a interferência eletromagnética (EMI). O projeto deste circuito baseia-se na soma de duas correntes (referência de tensão baseada em corrente), uma com coeficiente complementar a temperatura absoluta (CTAT) e outra com coeficiente proporcional à temperatura absoluta (PTAT), aplicada sobre um resistor. Neste projeto, a susceptibilidade a interferência eletromagnética de uma referência de tensão band- gap é estudada por meio de simulação. Projetada para ser fabricada com a tecnologia CMOS 0,35 μm da AMS (Autriamicrosystems), a referência forneceu uma tensão de referência está- vel de 1,354 V em sua saída operando normalmente na faixa de temperatura de -40 a 150oC. Quando submetido à EMI, o circuito exibiu apenas 24,7 mV (quando filtros capacitivos são incluído) de offset induzido, para um sinal de interferência variando de 150 kHz a 1 GHz<br>Integrated voltage references with low sensitivity to temperature, supply voltage and transient events are critical requirements in the most of integrated circuits. In this work, be- sides the usual restrictions, was added to concern with electromagnetic interference which is gaining much importance due to increasing electromagnetic pollution on the environment. So, in this work, proposes the design of a bandgap voltage reference with low susceptibility to electromagnetic interference (EMI) is proposed. The design of the circuit is based on the sum of two currents (current-based voltage reference), one with coefficient complementary to ab- solute temperature (CTAT) and the other with coefficient proportional to absolute temperature (PTAT) into a resistor. In this work, the susceptibility to electromagnetic interference in a bandgap voltage reference is evaluated by simulations. Designed to be implemented in AMS (Autriamicrosystems) 0,35 μm CMOS process, the reference provides a stable voltage refer- ence equal to 1,354 V in the output working properly in the temperature range of -40 to 150oC. When EMI is injected, the circuit exhibits only 24,7 mV (when capacitive filters are included) of induced offset, for an interference signal varying in the frequency range of 150 kHz to 1 GHz
14
Bubla, Jiří. "Band Gap - přesná napěťová reference." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2009. http://www.nusl.cz/ntk/nusl-217808.
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This diploma thesis is specialized on a design of a high accuracy voltage reference Bandgap. A very low temperature coefficient and output voltage approx. 1,205V are the main features of this circuit. The paper contains a derivation of the Bandgap principle, examples of realizations of the circuits and methods of compensation temperature dependence and manufacture process, design of Brokaw and Gilbert reference, design of a testchip and measurement results.
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Souza, Flávio Queiroz de. "Projeto de uma referência de tensão com baixa susceptibilidade a interferência eletromagnética (EMI) /." Ilha Solteira : [s.n.], 2011. http://hdl.handle.net/11449/87063.
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Orientador: Nobuo Oki<br>Banca: Cláudio Kitano<br>Banca: Márcio Barbosa Lucks<br>Resumo: Referências de tensão integradas com baixa sensibilidade à temperatura, tensão de a- limentação e eventos transitórios são componentes críticos na maioria dos circuitos integra- dos. Neste trabalho, além das restrições costumeiras, foi adicionada a preocupação com a in- terferência eletromagnética a qual vem ganhando muita importância devido a crescente polui- ção eletromagnética no ambiente. Assim, neste trabalho, propõe-se o projeto de uma referên- cia de tensão tipo bandgap com baixa susceptibilidade a interferência eletromagnética (EMI). O projeto deste circuito baseia-se na soma de duas correntes (referência de tensão baseada em corrente), uma com coeficiente complementar a temperatura absoluta (CTAT) e outra com coeficiente proporcional à temperatura absoluta (PTAT), aplicada sobre um resistor. Neste projeto, a susceptibilidade a interferência eletromagnética de uma referência de tensão band- gap é estudada por meio de simulação. Projetada para ser fabricada com a tecnologia CMOS 0,35 μm da AMS (Autriamicrosystems), a referência forneceu uma tensão de referência está- vel de 1,354 V em sua saída operando normalmente na faixa de temperatura de -40 a 150oC. Quando submetido à EMI, o circuito exibiu apenas 24,7 mV (quando filtros capacitivos são incluído) de offset induzido, para um sinal de interferência variando de 150 kHz a 1 GHz<br>Abstract: Integrated voltage references with low sensitivity to temperature, supply voltage and transient events are critical requirements in the most of integrated circuits. In this work, be- sides the usual restrictions, was added to concern with electromagnetic interference which is gaining much importance due to increasing electromagnetic pollution on the environment. So, in this work, proposes the design of a bandgap voltage reference with low susceptibility to electromagnetic interference (EMI) is proposed. The design of the circuit is based on the sum of two currents (current-based voltage reference), one with coefficient complementary to ab- solute temperature (CTAT) and the other with coefficient proportional to absolute temperature (PTAT) into a resistor. In this work, the susceptibility to electromagnetic interference in a bandgap voltage reference is evaluated by simulations. Designed to be implemented in AMS (Autriamicrosystems) 0,35 μm CMOS process, the reference provides a stable voltage refer- ence equal to 1,354 V in the output working properly in the temperature range of -40 to 150oC. When EMI is injected, the circuit exhibits only 24,7 mV (when capacitive filters are included) of induced offset, for an interference signal varying in the frequency range of 150 kHz to 1 GHz<br>Mestre
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Castellanos, Juan José Carrillo. "Projeto de uma fonte de tensão de referência CMOS usando programação geométrica." Universidade de São Paulo, 2010. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-01032011-120430/.
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Nesta dissertação é apresentada a aplicação da programação geométrica no projeto de uma fonte de tensão de referência de baixa tensão de alimentação que pode ser integrada em tecnologias padrões CMOS. Também são apresentados os resultados experimentais de um projeto da fonte de bandgap feito por um método de projeto convencional, cuja experiência motivou e ajudou ao desenvolvimento da formulação do programa geométrico proposta neste trabalho. O programa geométrico desenvolvido nesta dissertação otimiza o desempenho da fonte de bandgap e agiliza seu tempo de projeto. As expressões matemáticas que descrevem o funcionamento e as principais especificações da fonte de bandgap foram geradas e adaptadas ao formato de um programa geométrico. A compensação da temperatura, o PSRR, o consumo de corrente, a área, a tensão de saída e a sua variação por causa da tensão de offset do OTA, e a estabilidade são as principais especificações deste tipo de fonte de tensão de referência e fazem parte do programa geométrico apresentado neste trabalho. Um exemplo do projeto usando o programa geométrico formulado neste trabalho, mostra a possibilidade de projetar a fonte de bandgap em alguns minutos com erros baixos entre os resultados do programa geométrico e de simulação.<br>This work presents the application of geometric programming in the design of a CMOS low-voltage bandgap voltage reference source. Test results of a bandgap voltage reference designed via a conventional method are showed, this design experience motivated and helped to formulate the geometric program developed in this work. The geometric program developed in this work optimizes the bandgap source performance and speeds up the design time. The mathematical expressions that describe the bandgap source functioning and specifications were developed and adapted in the geometric program format. The temperature compensation, the PSRR, the current consumption, the area, the output voltage and its variations under the operational tranconductance amplifier offset voltage, and the stability are the main specifications of this type of bandgap reference source and they are included into the geometric program presented in this work. An example of the design using the geometric program formulated in this work, shows the possibility of designing the bandgap source in a few minutes with low errors between the geometric program results and the simulation results.
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Mattia, Neto Oscar Elisio. "NanoWatt resistorless CMOS voltage references for Sub-1 V applications." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2014. http://hdl.handle.net/10183/107131.
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Referências de tensão integradas sempre foram um bloco fundamental de qualquer sistema eletrônico e um importante tópico de pesquisa que tem sido estudado extensivamente nos últimos 50 anos. Uma tensão de referência é um circuito que provê uma tensão estável com baixa sensibilidade a variações em temperatura, alimentação, carga, características do processo de fabricação e tensões mecânicas de encapsulamento. Elas são normalmente implementadas através da soma ponderada de dois fenômenos físicos diferentes, com comportamentos em temperatura opostos. Normalmente, a tensão térmica, relacionada à constante de Boltzmann e à carga do elétron, fornece uma dependência positiva com temperatura, enquanto que a tensão base-emissor VBE de um transistor bipolar ou a tensão de limiar de um MOSFET fornece o termo complementar. Um bloco auxiliar é às vezes utilizado para fornecer as correntes de polarização do circuito, e outros blocos adicionais implementam a soma ponderada. A evolução da tecnologia de processos é o principal fator para aplicações em baixa tensão, enquanto que a emergência de dispositivos portáteis operados a bateria, circuitos biomédicos implantáveis e dispostivos de captura de energia do ambiente restringem cada circuito a consumir o mínimo possivel. Portanto, alimentações abaixo de 1 V e consumos na ordem de nanoWatts se tornaram características fundamentais de tais circuitos. Contudo, existem diversos desafios ao projetar referências de tensão de alta exatidão em processos CMOS modernos sob essas condições. As topologias tradicionais não são adequadas pois elas provêm uma referência de tensão acima de 1 V, e requerem resistências da ordem de G para atingir tão baixo consumo de potência, ocupando assim uma grande área de silício. Avanços recentes atingiram tais níveis de consumo de potência, porém com limitada exatidão, custosos procedimentos de calibração e grande área ocupada em silício. Nesta dissertação apresentam-se duas novas topologias de circuitos: uma tensão de junção bipolar com compensação de curvatura que não utiliza resistores e é auto-polarizada; e um circuito de referência bandgap sem resistores que opera abaixo de 1 V (também chamado de sub-bandgap). Ambos circuitos operam com consumo na ordem de nanoWatts e ocupam pequenas áreas de silício. Resultados de simulação para dois processos diferentes, 180 nm e 130 nm, e resultados experimentais de uma rodada de fabricação em 130 nm apresentam melhorias sobre tais limitações, mantendo as características desejadas de não conter resistores, ultra baixo consumo, baixa tensão de alimentação e áreas muito pequenas.<br>Integrated voltage references have always been a fundamental block of any electronic system, and an important research topic that has been extensively studied in the past 50 years. A voltage reference is a circuit that provides a stable voltage with low sensitivity to variations in temperature, supply, load, process characteristics and packaging stresses. They are usually implemented through the weighted sum of two independent physical phenomena with opposite temperature dependencies. Usually the thermal voltage, related to the Boltzmann’s constant and the electron charge, provides a positive temperature dependence, while the silicon bandgap voltage or a MOSFET’s threshold voltage provide the complementary term. An auxiliary biasing block is sometimes necessary to provide the necessary currents for the circuit to work, and additional blocks implement the weighted sum. The scaling of process technologies is the main driving factor for low voltage operation, while the emergence of portable battery-operated, implantable biomedical and energy harvesting devices mandate that every circuit consume as little power as possible. Therefore, sub-1 V supplies and nanoWatt power have become key characteristics for these kind of circuits, but there are several challenges when designing high accuracy voltage references in modern CMOS technologies under these conditions. The traditional topologies are not suitable because they provide a reference voltage above 1 V, and to achieve such power consumption levels would require G resistances, that occupy a huge silicon area. Recent advances have achieved these levels of power consumption but with limited accuracy, expensive calibration procedures and large silicon area.
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Colombo, Dalton Martini. "Design of analog integrated circuits aiming characterization of radiation and noise." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2015. http://hdl.handle.net/10183/133731.
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Esta tese de doutorado trata de dois desafios que projetistas de circuitos integrados analógicos enfrentam quando estimando a confiabilidade de transistores fabricados em modernos processos CMOS: radiação e ruído flicker. Em relação a radiação, o foco desde trabalho é a Dose Total Ionizante (TID): acumulação de dose ionizante (elétrons e prótons) durante um longo período de tempo nas camadas isolantes dos dispositivos, então resultando na degradação dos parâmetros elétricos (por exemplo, a tensão de limiar e as correntes de fuga). Este trabalho apresenta um caso de estudo composto por circuitos referência tensões de baseados na tensão de bandgap e na tensão de limiar dos transistores. Esses circuitos foram fabricados em uma tecnologia comercial CMOS de 130 nm. Um chip contendo os circuitos foi irradiado usando raio gama de uma fonte de cobalto (60 Co), e o impacto dos efeitos da radiação até uma dose de 490 krad nas tensões de saída é apresentado. Foi verificado que o impacto da radiação foi similar ou até mesmo mais severo que os efeitos causados pelo processo de fabricação para a maior parte dos circuitos projetados. Para as referências baseadas na tensão de bandgap implementadas com transistores de óxido fino e grosso, a variação na tensão de saída causada pela radiação foi de 5.5% e 15%, respectivamente. Para as referências baseadas na tensão de limiar, a variação da tensão de saída foi de 2% a 15% dependendo da topologia do circuito. Em relação ao ruído, o foco desta tese é no ruído flicker do transitor MOS quando este está em operação ciclo-estacionária. Nesta condição, a tensão no terminal da porta está constantemente variando durante a operação e o ruído flicker se torna uma função da tensão porta-fonte e não é precisamente estimado pelos tradicionais modelos de ruído flicker dos transistores MOS. Esta tese apresenta um caso de estudo composto por osciladores de tensão (topologia baseada em anel e no tanque LC) projetados em processos 45 e 130 nm. A frequência de oscilação e sua dependência em relação à polarização do substrato dos transistores foi investigada. Considerando o oscilador em anel, a média da variação da frequência de oscilação causada pela variação da tensão de alimentação e da polarização do substrato foi 495 kHz/mV e 81 kHz/mV, respectivamente. A média da frequência de oscilação é de 103,4 MHz e a média do jitter medido para 4 amostras é de 7.6 ps. Para o tanque LC, a frequência de oscilação medida é de 2,419 GHz e sua variação considerando 1 V de variação na tensão de substrato foi de aproximadamente 0,4 %.<br>This thesis is focused on two challenges faced by analog integrated circuit designers when predicting the reliability of transistors implemented in modern CMOS processes: radiation and noise. Regarding radiation, the concern of this work is the Total Ionizing Dose (TID): accumulation of ionizing dose deposited (electrons and protons) over a long time in insulators leading to degradation of electrical parameters of transistors (e.g. threshold voltage and leakage). This work presents a case-study composed by bandgap-based and threshold voltagebased voltage reference circuits implemented in a commercial 130 nm CMOS process. A chip containing the designed circuits was irradiated through γ-ray Cobalt source (60 Co) and the impact of TID effects up to 490 krad on the output voltages is presented. It was found that the impact of radiation on the output voltage accuracy was similar or more severe than the variation caused by the process variability for most of the case-study circuits. For the bandgap-based reference implemented using thin-oxide and thick-oxide transistors, TID effects result in a variation of the output voltage of 5.5 % and 12%, respectively. For the threshold voltage references, the output variation was between 2% and 15% depending on the circuit topology. Regarding noise, the concern of this work is the transistor flicker noise under cyclostationary operation, that is, when the voltage at transistor gate terminal is constantly varying over time. Under these conditions, the flicker noise becomes a function of VGS; and its is not accurately predicted by traditional transistor flicker noise models. This thesis presents a case-study composed by voltage oscillators (inverter-based ring and LC-tank topologies) implemented in 45 and 130 nm CMOS processes. The oscillation frequency and its dependency on the bulk bias were investigated. Considering the ring-oscillator, the average oscillation frequency variation caused by supply voltage and bulk bias variation are 495 kHz/mV and 81 kHz/mV, respectively. The average oscillation frequency is 103.4 MHz for a supply voltage of 700 mV, and the measured averaged period jitter for 4 measured samples is 7.6 ps. For the LC-tank, the measured oscillation frequency was 2.419 GHz and the total frequency variation considering 1 V of bulk bias voltage was only ~ 0.4 %.
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Dai, Xin. "Explicit characterization of bandgap references." [Ames, Iowa : Iowa State University], 2006.
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Colombo, Dalton Martini. "Bandgap voltage references in submicrometer CMOS technology." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2009. http://hdl.handle.net/10183/16136.
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Referências de tensão são blocos fundamentais em uma série de aplicações de sinais mistos e de rádio frequência, como por exemplo, conversores de dados, PLL's e conversores de potência. A implementação CMOS mais usada para referências de tensão é o circuito Bandgap devido sua alta previbilidade, e baixa dependência em relação à temperatura e tensão de alimentação. Este trabalho estuda aplicação de Referência de Tensão Bandgap. O princípio, as topologias tradicionalmente usadas para implementar este método e as limitações que essas arquiteturas sofrem são investigadas. Será também apresentada uma pesquisa das questões recentes envolvendo alta precisão, operação com baixa tensão de alimentação e baixa potência, e ruído de saída para as referências Bandgap fabricadas em tecnologias submicrométricas. Além disso, uma investigação abrangente do impacto causado pelo o processo da fabricação e do ruído no desempenho da referência é apresentada. Será mostrado que o ruído de saída pode limitar a precisão dos circuitos Bandgap e seus circuitos de ajuste. Para desenvolver nosso trabalho, três Referências Bandgap foram projetadas utilizando o processo IBM 7RF 0.18 micra com uma tensão de alimentação de 1.8V. Também foram projetados os leiautes desses circuitos para prover informações pósleiaute extraídos e resultados de simulação elétrica. Este trabalho provê uma discussão de algumas topologias e das práticas de projeto para referências Bandgap.<br>A Voltage Reference is a pivotal block in several mixed-signal and radio-frequency applications, for instance, data converters, PLL's and power converters. The most used CMOS implementation for voltage references is the Bandgap circuit due to its highpredictability, and low dependence of the supply voltage and temperature of operation. This work studies the Bandgap Voltage References (BGR). The most relevant and the traditional topologies usually employed to implement Bandgap Voltage References are investigated, and the limitations of these architectures are discussed. A survey is also presented, discussing the most relevant issues and performance metrics for BGR, including, high-accuracy, low-voltage and low-power operation, as well as the output noise of Bandgap References fabricated in submicrometer technologies. Moreover, a comprehensive investigation on the impact of fabrication process effects and noise on the reference voltage is presented. It is shown that output noise can limit the accuracy of the BGR and trim circuits. To support and develop our work, three BGR´s were designed using the IBM 0.18 Micron 7RF process with a supply voltage of 1.8 V. The layouts of these circuits were also designed to provide post-extracted layout information and electrical simulation results. This work provides a comprehensive discussion on the structure and design practices for Bandgap References.
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Palakodety, Ravi (Ravi Kiran). "Investigating packaging effects on bandgap references." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/41665.
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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2007.<br>Includes bibliographical references (p. 95-96).<br>This thesis investigates packaging effects on precision bandgap voltage references used in LTC switching regulators. Packaging stress causes a mean offset and room temperature distribution widening of the bandgap reference output voltage, as well as inconsistent temperature characteristics. Bandgap references with and without a proprietary stress-relief mechanism were compared to determine the impact of packaging stress on reference performance. References without stress-relief showed a mean offset of -2.3mV and spread of 10mV, while references with stress-relief showed a mean offset of -2.0mV and spread of 3.6mV. References with stress relief exhibited more consistent temperature coefficients than references without stress relief. A test chip was fabricated to allow measurement of VBE and AVBE within the bandgap reference. Parts with stress-relief showed tighter VBE and AVBE distributions, as well as more favorable temperature characteristics. The experiments in this thesis show that stress-relief is effective at improving bandgap reference performance.<br>by Ravi Palakodety.<br>M.Eng.
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Pereira, João Adalberto. "Uma fonte de referencia Bandgap." [s.n.], 1995. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260022.
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Orientador: Wilmar Bueno de Moraes<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica<br>Made available in DSpace on 2018-07-20T02:01:15Z (GMT). No. of bitstreams: 1
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Previous issue date: 1995<br>Resumo: Neste trabalho, proponho um estudo crítico/analítico de uma configuração de Fonte de Tensão de Referência Bandgap muito comum em chips comerciais, concluindo importantes itens quanto às técnicas de projeto e layout, o que nos permitirá julgar a eficiência de tal circuito quanto à compensação em temperatura.o circuito da fonte de referência escolhido para esse estudo foi extraído de um chip comercial por meio de metodologia e técnicas apropriadas de Engenharia Reversa, o que é plenamente legalizado [1, 2, 6, 8]. Tal trabalho é apresentado no Capítulo 1, onde se inclui análise dos componentes que integram o circuito e suas disposições físicas no layout. Em complementação à avaliação da fonte de referência extraída, proponho um reprojeto, onde se implementam algumas técnicas de compensação dos principais fatores que prejudicam a estabilidade em temperatura do sinal de saída, não consideradas no circuito original. Além de que, pelo fato da nova tecnologia de projeto disponível ser diferente daquela utilizada na confecção do circuito original, a qual desconhecida em grande parte, houve a necessidade de introduzir alterações no circuito, em vista da adaptação para a nova tecnologia. Como resultado final, apresento uma fonte de tensão de referência teoricamente semelhante à original, com o mesmo valor de tensão de saída, porém disponível em tecnologia ES2 poço-n 1,2 'mu¿<br>Mestrado<br>Mestre em Engenharia Elétrica
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Zimouche, Hakim. "Capteur de vision CMOS à réponse insensible aux variations de température." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00656381.
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Les capteurs d'images CMOS sont de plus en plus utilisés dans le domaine industriel : la surveillance, la défense, le médical, etc. Dans ces domaines, les capteurs d'images CMOS sont exposés potentiellement à de grandes variations de température. Les capteurs d?images CMOS, comme tous les circuits analogiques, sont très sensibles aux variations de température, ce qui limite leurs applications. Jusqu'à présent, aucune solution intégrée pour contrer ce problème n'a été proposée. Afin de remédier à ce défaut, nous étudions, dans cette thèse, les effets de la température sur les deux types d'imageurs les plus connus. Plusieurs structures de compensation sont proposées. Elles reprennent globalement les trois méthodes existantes et jamais appliquées aux capteurs d'images. La première méthode utilise une entrée au niveau du pixel qui sera modulée en fonction de l'évolution de la température. La deuxième méthode utilise la technique ZTC (Zero Température Coefficient). La troisième méthode est inspirée de la méthode de la tension de référence bandgap. Dans tous les cas, nous réduisons de manière très intéressante l'effet de la température et nous obtenons une bonne stabilité en température de -30 à 125°C. Toutes les solutions proposées préservent le fonctionnement initial de l'imageur. Elles n'impactent également pas ou peu la surface du pixel
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Bowers, Derek Frederick. "The Design of Bandgap Voltage References for Applications Requiring Minimal Output Noise." Thesis, Imperial College London, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.520857.
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Thomas, Dylan Buxton. "Silicon-germanium devices and circuits for high temperature applications." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33949.
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Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of SiGe technology for cryogenic and radiation-intense environments is well known, yet SiGe has been generally overlooked for applications involving extreme high temperature operation. This work is an investigation into the potential capabilities of SiGe technology for operation up to 300°C, including the development of packaging and testing procedures to enable the necessary measurements. At the device level, SiGe heterojunction bipolar transistors (HBTs), field-effect transistors (FETs), and resistors are verified to maintain acceptable functionality across the temperature range, laying the foundation for high temperature circuit design. This work also includes the characterization of existing bandgap references circuits, redesign for high temperature operation, validation, and further optimization recommendations. In addition, the performance of temperature sensor, operational amplifier, and output buffer circuits under extreme high temperature conditions is presented. To the author's knowledge, this work represents the first demonstration of functional circuits from a SiGe technology platform in ambient temperatures up to 300°C; furthermore, the optimized bandgap reference presented in this work is believed to show the best performance recorded across a 500°C range in a bulk-silicon technology platform.
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Cajueiro, João Paulo Cerquinho. "Projeto de uma fonte de tensão de referencia do tipo bandgap em tecnologia CMOS." [s.n.], 2002. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261553.
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Orientador : Carlos Alberto dos Reis Filho<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação<br>Made available in DSpace on 2018-08-01T16:10:50Z (GMT). No. of bitstreams: 1
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Previous issue date: 2002<br>Mestrado
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Cardoso, Adilson Silva. "Design and characterization of BiCMOS mixed-signal circuits and devices for extreme environment applications." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/53099.
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State-of-the-art SiGe BiCMOS technologies leverage the maturity of deep-submicron silicon CMOS processing with bandgap-engineered SiGe HBTs in a single platform that is suitable for a wide variety of high performance and highly-integrated applications (e.g., system-on-chip (SOC), system-in-package (SiP)). Due to their bandgap-engineered base, SiGe HBTs are also naturally suited for cryogenic electronics and have the potential to replace the costly de facto technologies of choice (e.g., Gallium-Arsenide (GaAs) and Indium-Phosphide (InP)) in many cryogenic applications such as radio astronomy. This work investigates the response of mixed-signal circuits (both RF and analog circuits) when operating in extreme environments, in particular, at cryogenic temperatures and in radiation-rich environments. The ultimate goal of this work is to attempt to fill the existing gap in knowledge on the cryogenic and radiation response (both single event transients (SETs) and total ionization dose (TID)) of specific RF and analog circuit blocks (i.e., RF switches and voltage references). The design approach for different RF switch topologies and voltage references circuits are presented. Standalone Field Effect Transistors (FET) and SiGe HBTs test structures were also characterized and the results are provided to aid in the analysis and understanding of the underlying mechanisms that impact the circuits' response. Radiation mitigation strategies to counterbalance the damaging effects are investigated. A comprehensive study on the impact of cryogenic temperatures on the RF linearity of SiGe HBTs fabricated in a new 4th-generation, 90 nm SiGe BiCMOS technology is also presented.
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Lobner, Matthew K. (Matthew Kneeland). "Enhancing SPICE model parameters to accurately design and simulate circuits with temperature dependence, with a special emphasis on bandgap references." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36567.
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Hedayati, Raheleh. "High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology." Doctoral thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-213697.
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Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. In fact, Si-based ICs have a limited maximum operating temperature which is around 300 °C for silicon on insulator (SOI). Owing to its superior material properties such as wide bandgap, three times larger than Silicon, and low intrinsic carrier concentration, SiC is an excellent candidate for high-temperature applications. In this thesis, analog and mixed-signal circuits have been implemented using SiC bipolar technology, including bandgap references, amplifiers, a master-slave comparator, an 8-bit R-2R ladder-based digital-to-analog converter (DAC), a 4-bit flash analog-to-digital converter (ADC), and a 10-bit successive-approximation-register (SAR) ADC. Spice models were developed at binned temperature points from room temperature to 500 °C, to simulate and predict the circuits’ behavior with temperature variation. The high-temperature performance of the fabricated chips has been investigated and verified over a wide temperature range from 25 °C to 500 °C. A stable gain of 39 dB was measured in the temperature range from 25 °C up to 500 °C for the inverting operational amplifier with ideal closed-loop gain of 40 dB. Although the circuit design in an immature SiC bipolar technology is challenging due to the low current gain of the transistors and lack of complete AC models, various circuit techniques have been applied to mitigate these problems. This thesis details the challenges faced and methods employed for device modeling, integrated circuit design, layout implementation and finally performance verification using on-wafer characterization of the fabricated SiC ICs over a wide temperature range.<br><p>QC 20170905</p>
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Najafizadeh, Laleh. "Design of analog circuits for extreme environment applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31796.
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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Cressler, John; Committee Member: Papapolymerou, John; Committee Member: Shen, Shyh-Chiang; Committee Member: Steffes, Paul; Committee Member: Zhou, Hao Min. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Lin, Yi-Jheng, and 林宜正. "0.18um Bandgap Reference Design." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/69076699464903092245.
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碩士<br>崑山科技大學<br>電子工程研究所<br>103<br>Analog circuit often need a temperature and voltage independent reference。This article use TSMC 0.18 um to design a second order operational amplifier to improve the output of bandgap reference. We use simulation software (Advanced Design System) to simulate this circuit, the temperature dependent deviation is 18mV from -20°C to 100°C. The output voltage is 820mV。
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Cheng, Chin-Hung, and 鄭欽鴻. "Bandgap Reference Voltage Generator." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/10794634026978236467.
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碩士<br>國立臺灣大學<br>電子工程學研究所<br>92<br>Precision voltage reference plays an important role in modern integrated circuits systems. It can produce a stable reference voltage insensitive to the variations of supply voltage and temperature. Voltage references are widely adopted in many integrated circuits, such as A/D or D/A converters, operational amplifiers, and linear regulators. They are used for defining input/output voltage range, biasing current source of differential pairs, and providing a comparison reference for comparators, etc.
The objective of this thesis is to design a bandgap reference voltage generator with input voltage 3V to 6V and output voltage around 1.25V. This reference voltage is intended for using in low dropout linear regulators (LDO). A pre-regulator circuit feeds the bandgap circuit with a regulated 2V to lower the supply voltage sensitivity. A new bandgap circuit topology is also presented. The final bandgap reference with supply voltage sensitivity less than 0.3 mV/V, and temperature coefficient around 7 ppm/℃, and power consumption lower than 100μW is achieved.
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Hsu, Kang-Yu, and 徐康禹. "Current Mode Bandgap Voltage Reference." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/xxdacb.
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碩士<br>逢甲大學<br>電機工程所<br>90<br>The objective of this thesis is to design a bandgap voltage reference that can be operated in the range from 3.3V to 5V. The main work is to design a circuit that utilizes a PTAT (proportional to absolute temperature) to compensate the negative temperature coefficient resulting from BJT. The ordinary bandgap voltage reference requires an operational amplifier to stabilize the output voltage. As a result, the circuit will consequently consume considerable area and power dissipation. To circumvent these problems, we propose a current mode bandgap voltage reference, which will not only decrease the temperature effect, but also significantly reduce the power consumption. The proposed current mode bandgap voltage reference can regulate a stabilized output voltage and maintain an excellent resistance to other external variables. Moreover, the output voltage is adjustable by external resistors. Many capability of this design has shown to be superior to those using operational amplifier as feedback.
Our circuit is fabricated bt UMC 0.5μm double-poly triple-metal N-well CMOS process.
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CHANG, CHIH-TIEN, and 張志田. "CMOS Micropower Bandgap Reference, Time Reference and Temperature Sensor." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/17718187721340808673.
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碩士<br>國立臺灣大學<br>電機工程學系研究所<br>86<br>There are three topics in this paper : CMOS micropower bandgap reference,
time reference and temperature sensor. The CMOS micropower bandgap referenc
e mainly utilizes the traditional concepts of bandgap reference, replaces the
original PTAT ( Proportional To Absolute Temperature ) part formed by BJT pair
with CMOS devices operating in the weak inversion region. Also uses the verti
cal pnp BJT formed by CMOS process. Hoping that under micropower, the circuit
could output a reference voltage which is stable suffering from the limiting t
emperature variation. In this topics, we design a bandgap reference which oper
ates under 1.5V, single battery, consumes power less than 0.5uW and suffers te
mperature varying from -40℃to 100℃. However, the test results is not so good
that the 3rd chip is under designing. Different to the 1st topic, the CMOS
time reference utilizes the CMOS lateral pnp BJT to design currents and volta
ges relating to temperature variation and uses these to compensate the current
reference. By this current reference, we could design a one-shot circuit to f
orm a pulse not varying with different temperature, a time reference. In this
topics, we design a current reference and a time reference which operate under
3V power supply and suffer temperature variation from -40℃to 100℃. Although
the current reference''s output is not so good, we have a 1.5uS time reference
which and varies in 10% error. This is because the voltage reference and curr
ent reference vary together. Finally, with the experiences of designing cir
cuits relating to temperature, we utilize a current reference and a current up
with temperature up and 1st-order delta-sigma ADC to design a temperature sen
sor which operates under 3V power supply and suffers temperature variation fro
m -40℃to 100℃and a bandgap reference. After testing, the current ratio of se
nsing part is sensitive to temperature varying but the function of ADC is not
so good that the temperature sensor has errors up to 20℃.The bandgap referenc
e has a 77ppm/℃temperature coefficient.
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CHIU, WEI-CHE, and 邱偉哲. "Bandgap reference circuit with digital switch." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/18295605098738865320.
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碩士<br>樹德科技大學<br>電腦與通訊系碩士班<br>102<br>This paper proposes a bandgap reference circuit(BGR) with digital switch. The digital switch can control the current to compensate the mismatches that due to process and temperature vary. The output voltage of proposes BGR circuit is 1.2V and operate temperature form -20~80℃.The BGR circuit with digital switch is using TSMC 0.35μm 2P4M process. The operate voltage is 1.6V~2.8V.
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Chia, Jr-Yung, and 賈志勇. "Micro Power Low Voltage Bandgap Reference." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/09338594754044322158.
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碩士<br>中原大學<br>電子工程研究所<br>94<br>Abstract
Three micro power low voltage bandgap references are presented. These complete designs were simulated and laid out in a standard digital 0.18-µm 1P6M 1.8V CMOS process and operated at 1.5V power supply. A micro power folded cascode operational transconductance amplifier is also presented for these micro power bandgap references.
A micro power bandgap voltage reference uses a micro power amplifier to keep a balance condition, and provides a 1.2086V 2.3mV bandgap voltage, a temperature coefficient of 48.7 ppm/℃ over a temperature range from 0 to 60℃ from a measured statistics. The operated chips of this reference consume a mean power dissipation of 43.1µW.
Another micro power low bandgap voltage reference uses independent circuits of biasing and start-up in internal amplifier to obtain more reliability, and provides a 603.9mV 1.8mV bandgap voltage, a temperature coefficient of 72.8 ppm/℃ over a temperature range from 0 to 60℃ from a measured statistics. The measured chips can be operated a minimum supply voltage of sub-1V and consume a mean power dissipation of 49.1µW. Moreover, a micro power bandgap current reference utilized a compensated technology of two branch current was presented in this thesis. In a block circuit with a feedback noise issue, the improved bandgap current reference is able to restrain noise feedback and keep current supply stably. In this design, the reference output current is 300µA within a temperature coefficient of 16 ppm/℃.
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Wang, Zhi-Ming, and 王志明. "A Low Power OPless Bandgap Reference Circuit." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/60710948837248049085.
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Wang, Jyh-Ming, and 王志明. "A Low Power OPless Bandgap Reference Circuit." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/88951317953313398203.
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Chu, Ching-Yun, and 儲青雲. "Design of Sub-1-V Bandgap Reference." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/74271470756096968409.
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碩士<br>國立交通大學<br>電子工程系<br>91<br>A sub-1-V CMOS bandgap reference is presented in this thesis. A curvature-compensated current technology of a proposed bandgap reference is also described in this thesis.
The proposed new sub-1-V bandgap reference is fabricated using a standard TSMC 0.25μm 1P5M CMOS process and has been measured completely. The measurement results of this chip show that, at the minimum supply voltage 0.85V, the output reference voltage is 238.2mV with an effective temperature coefficient of 58.1ppm/°C while the DC current is 28μA. At 0.85V supply voltage, the measured power supply noise rejection ratio is -33.2dB at 10kHz. A method in curvature-compensated current of a proposed bandgap reference is presented in this thesis. The simulation results show that, at the minimum supply voltage 0.9V, the output reference voltage is 513.1mV with an effective temperature coefficient of 10.7ppm/°C. At 0.9V supply voltage, the measured power supply noise rejection ratio is -27.5dB at 10kHz.
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Yang, Julian, and 楊宙穎. "CMOS Temperature Sensor and Bandgap Voltage Reference." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/64563h.
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碩士<br>國立交通大學<br>電子物理系所<br>92<br>A temperature sensing system with digital output consists of a front part and a rear part. The front part includes temperature sensor and bandgap voltage reference. The rear part is an analog to digital converter (ADC). In CMOS technology, the BJT device is used as the basic temperature sensor. The base-emitter voltage (VEB) can be approximated as a linear function of temperature. By using it, temperature sensor and bandgap voltage reference can be accomplished. The simulation of the front part using a standard TSMC 0.25um 1P5M CMOS process is presented in the thesis. The designed PTAT (Proportional To Absolute Temperature) circuit has an output voltage in proportion to absolute temperature with 3.6mV / ℃. The reference voltage (Vref) is 1.21V with an effective temperature coefficient of 8.3 ppm/℃ from -25℃~125℃.
Further more, A new type of bandgap voltage reference, in the form of , is proposed. We expand VEB(T) into Taylor series. After second-order compensation with one scaling factor a1=1 and a2 =-0.79, we will get a third-order temperature dependency of bandgap voltage reference. With current mode topology, the circuits design achieves a second-order compensation of VEB. It is simulated with the models of standard TSMC 0.18um 1P6M process. From simulation, the output voltage is 255mV with an effective temperature coefficient of 7.8 ppm/℃ for the temperature range -40℃~125℃. Total current consumption is about 408uA and power consumption is about 0.73mW at 25℃ for this proposed circuit.
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Murugeshappa, Ravi Gourapura. "A low-voltage, low-power CMOS bandgap reference." 2010. http://hdl.handle.net/2152/9162.
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Bandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage reference for the entire IC. The most used CMOS implementation for voltage references is the bandgap circuit due to its high predictability, and low dependence of the supply voltage and temperature of operation. This work studies a CMOS implementation of a resistor-less bandgap reference, which consumes low power. The most relevant and traditional approaches usually employed to implement bandgap voltage references are investigated. The impact of process, power-supply, load and temperature variations has been analyzed and simulated. The functionality of critical components of the circuit has been verified through chip implementation.<br>text
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黃全興. "CMOS circuit design for low reference voltage using bandgap." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/49468291675147213413.
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碩士<br>國立中興大學<br>電機工程學系<br>91<br>Reference voltage generators are widely used in many applications from analog circuit to mixed-signal circuits such as ADC, DAC, DRAM and flash memories. These structures are required to provide a stable reference voltage with a low sensitivity to temperature and supply voltage. One of the most popular architectures is the band-gap reference. Due to the need of battery-operated systems for portability, low output reference voltage, low supply voltages and low power consumption will be the trends in the future VLSI products. Two new band-gap reference circuits operated at low supply voltages using 0.18m CMOS technology are presented in this thesis.
These two circuits are designed by vertically parasitical BJTs in CMOS technology. The chip area of the new BGR circuit is small. The deviation of Vref is less than 12mV for the temperature ranging from —45 oC to 90 oC.
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Liu, Chzung-Tai, and 劉宗泰. "The study of low voltage bandgap voltage reference circuit." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/37524136168903290293.
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Yeh, Jia-Yi, and 葉家宜. "Design and Implementation of the Bandgap Reference without OPA." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/xf7z4m.
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碩士<br>國立臺北科技大學<br>電資碩士班<br>99<br>This thesis aims to design a CMOS bandgap voltage reference with a state-up circuit, but without using an operational amplifier. Typically, an operational amplifier was used in bandgap reference to have both great performance and stability. However, a disadvantage of high offset voltage degrades its performance, considerably moreover, an operational amplifier occupies more chip area. In order to overcome those problems, a CMOS bandgap reference without OPA was proposed in this paper, not only having good performance but also reducing the chip area. Furthermore, a start-up circuit and a gm-constant circus are used in the proposed bandgap reference, to realize a zero temperature coefficient, Notify that both temperature-independent voltage and current are provided simultaneously.
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Luo, Jing-Yu, and 羅景煜. "Low Power Low Voltage Temperature-Compensation Bandgap Reference Circuit." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/63932569067195146542.
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碩士<br>國立聯合大學<br>電子工程學系碩士班<br>95<br>Reference circuits are the basic building blocks in many analog and digital applications such as A/D and D/A converter, flash memory circuits, and many other circuits. The objective of reference generation is to establish a dc voltage or current that is independent of the supply and fabrication process and has a well-defined behavior with temperature. The properties of reference circuit will not the same with the different demand for characteristics. In this thesis, we will be aimed at the requirement that low power, low voltage and provide with temperature-compensation technique to design this reference circuit. Furthermore, the requirement of low power, low voltage and provide with temperature-compensation technique is especially application in the batter-operated mobile products, such as cellular phones, PDAs, camera recorders, and laptops.
In this thesis, these three structures of 「A Low Output Voltage CMOS Bandgap Reference」, 「A Low Supply Voltage Temperature-Compensation CMOS Subbandgap Reference with Two Averaging Circuitry」 and 「A Low Supply Voltage CMOS Subbandgap Reference Using MOSFET Temperature-Compensation technique」 are proposed and implemented. The first and second structures are used of the bipolar transistor and the feedback of differential amplifier to achieve the requirement of temperature-compensation. On the basis of concept for the first and second structures, a new structure of bandgap reference is supported in third structure which difference between first and second structures. The third structure is used of the bias circuit to generate a positive temperature coefficient current and used of a negative temperature coefficient active load to achieve the requirement of temperature-compensation. In this structure, the low supply voltage, low power and low sensitivity with temperature is possibly implemented. This circuit will be implemented in standard TSMC CMOS 0.18um process.
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Gao, Jing-Zhi, and 高靖智. "Active Phased Array Receiver and Low-Supply-Voltage Bandgap Reference." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/y942dm.
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Wang, Wei-Shin, and 王惟昕. "Fully-MOSFET Bandgap Voltage Reference Circuit with Self-cascade Architecture." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/vhax89.
Full textAbstract:
碩士<br>國立彰化師範大學<br>電子工程學系<br>107<br>This thesis presents a fully-MOSFET band-gap voltage reference circuit with low temperature coefficient. The circuit consists of a generator of PTAT, a generator of CTAT and a current source. The generator of PTAT utilize the self-cascade MOSFETs to generate the PTAT voltage, and the generator of CTAT is a MOSFET gate to source voltage, this voltage is a CTAT voltage when the MOSFET is operated in sub-threshold region.
We use TSMC 0.18 μm CMOS technology to design the circuit in this thesis. The pre-simulation results are when VDD is at 1.8 V and temperature is ranging from -25 °C to 110 °C, the output voltage is 895 mV, the temperature coefficient is 9.7 ppm/°C, the power consumption is 280.9 nW, and the PSRR is -41.7 dB. Under the same condition, the post-simulation results are as follow: the output voltage is 881 mV, the temperature coefficient is 33 ppm/°C, the power consumption is 239.5 nW, and the PSRR is -41 dB.
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Hsu, Chao-Hung, and 許肇宏. "A 1.5 ppm/℃ Wide-Temperature-Range CMOS Bandgap Reference Circuit." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/51807608514703549352.
Full textAbstract:
碩士<br>國立彰化師範大學<br>電子工程學系<br>103<br>In this thesis, the designed circuit is based on the structure of first-order linear temperature compensation bandgap voltage reference circuit, and the circuit generates the current with nonlinear temperature term for curve compensation by using BJT’s current relationship with temperature, IPTAT and ICTAT. Finally, the circuit generates the bandgap reference voltage source which has wide-temperature operation range and low temperature coefficient.
The TSMC 0.18 μm 1P6M CMOS models are used in the HSPICE simulation, and Virtuoso is used to implement the circuit layout. The pre-layout and post-layout simulation results are, when supply voltage VDD is 1.5 V and the operation temperature range is from -40 ℃ to 150 ℃. The average value of output reference voltage is 864.84 mV and 864.87 mV, the temperature coefficient is about 1.5 ppm/℃ and 2.3 ppm/℃, the power consumption is about 213.91 μW and 226.07 μW, and the Power Supply Rejection Ratio (PSRR) is about 58 dB and 42 dB at 10 kHz. The measured results of the chip are, when supply voltage VDD is 1.5 V and the operation temperature range is from -40 ℃ to 150 ℃. The temperature coefficient is about 30 ppm/℃, the power consumption is about 220 μW, and the average value of output reference voltage is 875.75 mV
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Jian, Zih-Hao, and 簡子豪. "The Resistorless Bandgap Voltage Reference Circuit Based on Piecewise Compensation." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/75033211528052212694.
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碩士<br>國立彰化師範大學<br>電子工程學系<br>104<br>This thesis presents a band-gap voltage reference circuit with low temperature coefficient. The circuit consists of a resistor-less first-order band-gap voltage reference circuit and a resistor-less second-order circuit. The first-order band-gap voltage reference circuit consists of generator of PTAT, generator of CTAT and start-up circuit. The generator of PTAT is composed of two pairs of current mirrors and two MOS diodes, and two MOS diodes with different channel width and same channel length generate the bias current. While, the circuit of CTAT consists of one MOSFET, working as an active load, four pairs of current mirrors, and three MOSFET operating in sub-threshold region. Use current subtraction technique to generate the bias current of CTAT. The start-up circuit has two MOSFET and a MOS capacitance, and the start-up circuit destroys the degeneration bias point, so the circuit can work properly. The start-up circuit in this study uses the charge and discharge of MOS capacitance to change the bias condition of the start-up circuit, so the circuit can maintain in operation region. The second-order circuit is trans-linear circuit in this thesis, which consists of an OPA, four BJTs and five MOSFETs. The circuit generates nonlinear compensation current, which is square to absolute temperature, and a current mirror adjusts this compensation current. Combine first order and second order, we obtain a band-gap voltage reference with low temperature sensitivity.
The circuit in this thesis is designed by TSMC 0.18 μm CMOS technology. The pre-simulation results, when VDD is at 1.8V and temperature is ranging from -40℃ to 125℃, are the temperature coefficient is 30 ppm/℃, the power consumption is 496 µW, and PSRR is -32dB. Under the same condition, the post-simulation results are as follow: temperature coefficient is 16.75 ppm/℃, the power consumption is 560 µW, and PSRR is -36dB. The measurement results are as follow: temperature coefficient is 118.72 ppm/℃, the power consumption is 504 µW, and PSRR is -27dB.
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Lin, Chien-Chih, and 林建志. "Study on A Nonlinear Piecewise Compensated Bandgap Voltage Reference Circuit." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/75727914361332470637.
Full textAbstract:
碩士<br>國立彰化師範大學<br>電子工程學系<br>102<br>In this thesis the designed circuits utilize the structure of a first-order temperature compensation bandgap voltage reference circuit, and nonlinear piecewise compensated circuits for curve compensation to generate second-order temperature compensation current. Then, using resistor ratio adjusts the value of compensation current to produce a low temperature sensitivity output reference voltage. The TSMC 0.18 µm 1P6M CMOS models are used in the circuit simulation.
When the supply voltage VDD is 1.3 V and the temperature range is from -40 ℃ to 120 ℃, the pre-layout simulation results show as follows:
1. The average value of output voltage reference is about 716.79 mV.
2. The deviation value is about 0.096 mV, and the temperature coefficient is about 0.84 ppm/℃.
3. The power consumption is about 117.73 µW, and the power supply rejection ratio (PSRR) is about 57 dB.
When the supply voltage VDD is 1.3 V and the temperature range is from -40 ℃ to 120 ℃, the post-layout simulation results show as follows:
1. The average value of output voltage reference is about 778.31 mV.
2. The deviation value is about 0.104 mV, and the temperature coefficient is about 0.85 ppm/℃.
3. The power consumption is about 148.88 µW, and the power supply rejection ratio (PSRR) is about 46 dB.