Log in

Relevant bibliographies by topics / Bandgap reference / Journal articles

To see the other types of publications on this topic, follow the link: Bandgap reference.

Journal articles on the topic 'Bandgap reference'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Bandgap reference.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Shi, Jun. "Bandgap Reference Layout Analysis and Design." International Journal of Information and Electronics Engineering 9, no. 1 (March 2019): 1–6. http://dx.doi.org/10.18178/ijiee.2019.9.1.695.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Banu, Viorel, Phillippe Godignon, Xavier Jordá, Mihaela Alexandru, and José Millan. "Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications." Materials Science Forum 679-680 (March 2011): 754–57. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.754.

Full text

Abstract:

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

APA, Harvard, Vancouver, ISO, and other styles

3

Barteselli, Edoardo, Luca Sant, Richard Gaggl, and Andrea Baschirotto. "Design Techniques for Low-Power and Low-Voltage Bandgaps." Electricity 2, no. 3 (July 26, 2021): 271–84. http://dx.doi.org/10.3390/electricity2030016.

Full text

Abstract:

Reverse bandgaps generate PVT-independent reference voltages by means of the sums of pairs of currents over individual matched resistors: one (CTAT) current is proportional to VEB; the other one (PTAT) is proportional to VT (Thermal voltage). Design guidelines and techniques for a CMOS low-power reverse bandgap reference are presented and discussed in this paper. The paper explains firstly how to design the components of the bandgap branches to minimize circuit current. Secondly, error amplifier topologies are studied in order to reveal the best one, depending on the operation conditions. Finally, a low-voltage bandgap in 65 nm CMOS with 5 ppm/°C, with a DC PSR of −91 dB, with power consumption of 5.2 μW and with an area of 0.0352 mm2 developed with these techniques is presented.

APA, Harvard, Vancouver, ISO, and other styles

4

Kim, Jae-Bung, and Seong-Ik Cho. "Modified Low-Votlage CMOS Bandgap Voltage Reference with CTAT Compensation." Transactions of The Korean Institute of Electrical Engineers 61, no. 5 (May 1, 2012): 753–56. http://dx.doi.org/10.5370/kiee.2012.61.5.753.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Hande, Vinayak, and Maryam Shojaei Baghini. "Survey of Bandgap and Non-bandgap based Voltage Reference Techniques." Scientia Iranica 23, no. 6 (October 1, 2016): 2845–61. http://dx.doi.org/10.24200/sci.2016.3994.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Tian, XingGuo, XiaoNing Xin, and DongYang Han. "A high precision bandgap voltage reference." MATEC Web of Conferences 232 (2018): 04072. http://dx.doi.org/10.1051/matecconf/201823204072.

Full text

Abstract:

In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient. In this paper, the basic implementation principle of the bandgap reference is analyzed.On the basis of the traditional bandgap reference circuit structure,this design adds a trimming network and a temperature compensation network. A new Gaussian bell curve compensation technique is adopted to compensate the low temperature section, and the normal temperature section and the high temperature section respectively. Compared with the existing compensation technology, the versatility and the compensation effect is better. The designed circuit is designed and manufactured based on the Huahong HHNECGE0.35um process. The results show that the output voltage is 2.5V at 2.7V supply voltage and temperature range of -40-125°C.at typical process angle ,the temperature coefficient is 0.54618 PPm/°C,and is within 1PPm/°C at other process angles.

APA, Harvard, Vancouver, ISO, and other styles

7

Ye, Rong Ke, and Rong Bin Hu. "A Bandgap Reference with High Order Temperature Compensation." Advanced Materials Research 1049-1050 (October 2014): 649–52. http://dx.doi.org/10.4028/www.scientific.net/amr.1049-1050.649.

Full text

Abstract:

A kind of CMOS bandgap reference circuit with high order temperature compensation is introduced [1]. Compared to the traditional circuit, the bandgap reference proposed here has several advantages such as better temperature stability, smaller chip area, lower power consumption, self-power-on, and so on. Our design can be used in analog-to-digital or digital-to-analog converters, where high performance bandgap reference is required.

APA, Harvard, Vancouver, ISO, and other styles

8

Mitrea, O., C. Popa, A. M. Manolescu, and M. Glesner. "A curvature-corrected CMOS bandgap reference." Advances in Radio Science 1 (May 5, 2005): 181–84. http://dx.doi.org/10.5194/ars-1-181-2003.

Full text

Abstract:

Abstract. This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the VBE(T ) expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35µm 3Metal/2Poly CMOS technology and the chip area is approximately 70µm × 110µm. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW.

APA, Harvard, Vancouver, ISO, and other styles

9

Dai *, Yihong, Donald T. Comer, and David J. Comer. "A GaAs HBT bandgap voltage reference." International Journal of Electronics 92, no. 2 (February 2005): 87–97. http://dx.doi.org/10.1080/00207210412331332853.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Cherry, E. M. "2-Terminal floating bandgap voltage reference." IEE Proceedings - Circuits, Devices and Systems 152, no. 6 (2005): 729. http://dx.doi.org/10.1049/ip-cds:20045130.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Buck, A. E., C. L. McDonald, S. H. Lewis, and T. R. Viswanathan. "A CMOS bandgap reference without resistors." IEEE Journal of Solid-State Circuits 37, no. 1 (2002): 81–83. http://dx.doi.org/10.1109/4.974548.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Borazan, Ismail, Yasin Altin, Ali Demir, and Ayse Celik Bedeloglu. "Characterization of organic solar cells using semiconducting polymers with different bandgaps." Journal of Polymer Engineering 39, no. 7 (July 26, 2019): 636–41. http://dx.doi.org/10.1515/polyeng-2019-0052.

Full text

Abstract:

Abstract Polymer-based organic solar cells are of great interest as they can be produced with low-cost techniques and also have many interesting features such as flexibility, graded transparency, easy integration, and lightness. However, conventional wide bandgap polymers used for the light-absorbing layer significantly affect the power conversion efficiency of organic solar cells because they collect sunlight in a given spectrum range and due to their limited stability. Therefore, in this study, polymers with different bandgaps were used, which could allow for the production of more stable and efficient organic solar cells: P3HT as the wide bandgap polymer, and PTB7 and PCDTBT as low bandgap polymers. These polymers with different bandgaps were combined with PCBM to obtain increased efficiency and optimum photoactive layer in the organic solar cell. The obtained devices were characterized by measuring optical, photoelectrical, and morphological properties. Solar cells using the PTB7 and PCDTBT polymers had more rough surfaces than the reference cell using P3HT. The use of low-bandgap polymers improved Isc significantly, and when combined with P3HT, a higher Voc was obtained.

APA, Harvard, Vancouver, ISO, and other styles

13

Qu, Wei, Li Mei Hou, Xiao Xin Sun, Jing Yu Sun, and Liang Yu Li. "The Design of Bandgap Reference Based on Empyrean Aether Software." Applied Mechanics and Materials 687-691 (November 2014): 3489–93. http://dx.doi.org/10.4028/www.scientific.net/amm.687-691.3489.

Full text

Abstract:

A high-performance bandgap reference voltage source design method is proposed in this paper, according to the shortcomings of traditional bandgap reference voltage source. This method combined CSMC 0.35μm CMOS process with Aether software technology, enabling to improve the bandgap reference source op amp performance and take into account accuracy and stability of the system. From the experimental results: this bandgap reference voltage source output voltage has changed about 63 mV when the temperature varied from to , and the line regulator is 0.4mV/V when the power supply voltage varied from 3.2V to 3.3V. This system has advantages of high accuracy and good stability.

APA, Harvard, Vancouver, ISO, and other styles

14

Chen, Xi, Liang Li, Xing Fa Huang, Xiao Feng Shen, and Ming Yuan Xu. "A CMOS Bandgap Reference with Temperature Compensation." Applied Mechanics and Materials 667 (October 2014): 401–4. http://dx.doi.org/10.4028/www.scientific.net/amm.667.401.

Full text

Abstract:

This paper has presented a bandgap reference circuit with high-order temperature compensation. The compensation technique is achieved by using MOS transistor operating in sub-threshold region for reducing high-order TC of Vbe. The circuit is designed in 0.18¦Ìm CMOS process. Simulation results show that the proposed circuit achieves 4.2 ppm/¡æ with temperature from-55 to 125 ¡æ, which is only a third than that of first-order compensated bandgap reference.

APA, Harvard, Vancouver, ISO, and other styles

15

Ren, Ming Yuan, and En Ming Zhao. "A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C." Advanced Materials Research 981 (July 2014): 66–69. http://dx.doi.org/10.4028/www.scientific.net/amr.981.66.

Full text

Abstract:

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

APA, Harvard, Vancouver, ISO, and other styles

16

Chi, Shang Sheng, Wei Hu, Yu Sen Xu, and Ming Hui Fan. "Design of an Output-Capacitorless LDO Regulator with Adaptive Power Transistors." Applied Mechanics and Materials 631-632 (September 2014): 322–26. http://dx.doi.org/10.4028/www.scientific.net/amm.631-632.322.

Full text

Abstract:

This paper presents a bandgap reference and an output-capacitorless LDO regulator with adaptive power transistors. The bandgap reference consists of a current reference circuit, a bipolar transistor and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed LDO improves load transient and light load efficiency by permitting the regulator to transform itself between 2-stage and 3-stage topologies, depending on the load current condition. Cadence simulation with SMIC 0.18 μm process shows that the bandgap reference generates a reference voltage 569 mV and the quiescent current is only 0.23 μA, the proposed LDO generates an output voltage 1 V, the quiescent current is 0.88 μA (including bandgap reference) at no-load condition, the undershoot /overshoot voltage is 187 mV/152 mV and the settling time is 5 μs as load current suddenly changes from 0 to 100 mA, or vice versa.

APA, Harvard, Vancouver, ISO, and other styles

17

Zhou, Qian Neng, Yun Song Li, Jin Zhao Lin, Hong Juan Li, Chen Li, Yu Pang, Guo Quan Li, Xue Mei Cai, and Qi Li. "A High-Order CMOS Bandgap Voltage Reference." Advanced Materials Research 989-994 (July 2014): 1165–68. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.1165.

Full text

Abstract:

A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

APA, Harvard, Vancouver, ISO, and other styles

18

Kim, Joo-Seong, Ja-Hyuck Koo, Jea-Ho Lee, and Bai-Sun Kong. "A bandgap reference with resistance variation compensated." IEICE Electronics Express 8, no. 19 (2011): 1602–7. http://dx.doi.org/10.1587/elex.8.1602.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Hu, Rong Bin, Xiang Cai, and Xiao Ying Zhang. "A Novel BiCMOS Current-Mode Bandgap Reference." Advanced Materials Research 760-762 (September 2013): 1048–52. http://dx.doi.org/10.4028/www.scientific.net/amr.760-762.1048.

Full text

Abstract:

In this paper, a novel BiCMOS current steering bandgap is presented, which includes reference core, start-up circuit, and output circuit, of which the reference core is used to produce the temperature-stable current, the start-up to start up the reference core when powered on, and the output circuit to proportionally transport the reference current to other cells on the same chip. Compared to the traditional voltage-mode bandgap reference, because of the adoption of the current-steering mode, the reference proposed in this paper, has the merits of being immune to variation of the power supply, minimum transport consumption, better matches, temperature stability, smaller area, auto-startup, and so on, which are specially needed in AD/DA application. The simulation shows that the proposed current-mode reference circuit has full temperature range coefficient of 8.9ppm, which is better than that of the traditional voltage-and current-mode reference circuits.

APA, Harvard, Vancouver, ISO, and other styles

20

Gunawan, M., G. C. M. Meijer, J. Fonderie, and J. H. Huijsing. "A curvature-corrected low-voltage bandgap reference." IEEE Journal of Solid-State Circuits 28, no. 6 (June 1993): 667–70. http://dx.doi.org/10.1109/4.217981.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Zekun, Zhou, Ming Xin, Zhang Bo, and Li Zhaoji. "A novel precision curvature-compensated bandgap reference." Journal of Semiconductors 31, no. 1 (January 2010): 015010. http://dx.doi.org/10.1088/1674-4926/31/1/015010.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Wang, Songlin, Shuang Feng, Hui Wang, Yu Yao, Jinhua Mao, and Xinquan Lai. "A novel high accuracy bandgap reference voltage source." Circuit World 43, no. 4 (November 6, 2017): 141–44. http://dx.doi.org/10.1108/cw-04-2017-0019.

Full text

Abstract:

Purpose This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.

APA, Harvard, Vancouver, ISO, and other styles

23

Kazeminia, Sarang, Khayrollah Hadidi, and Abdollah Khoei. "Reanalyzing the basic bandgap reference voltage circuit considering thermal dependence of bandgap energy." Analog Integrated Circuits and Signal Processing 79, no. 1 (December 29, 2013): 141–47. http://dx.doi.org/10.1007/s10470-013-0248-y.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Xu, Wei Kai, and Wei Wang. "Single-Negative Properties Based on the Bandgaps of One-Dimensional Phononic Crystal." Applied Mechanics and Materials 105-107 (September 2011): 279–82. http://dx.doi.org/10.4028/www.scientific.net/amm.105-107.279.

Full text

Abstract:

Phononic Crystals (PCs) have important potential application in engineering by the properties of bandgaps. In the paper, the bandgap characteristic of one-dimensional PCs is attributed to the results of Single-Negative (SN) properties, e.g. negative modulus or negative density. The effective parameters of the 1D PCs were predicted by the equivalent layer concept with considering viscous damping, and the results showed that during the frequency regions of the bandgaps, the negative parameters appeared. This will be a reference for the design of acoustic negative refraction metamaterials.

APA, Harvard, Vancouver, ISO, and other styles

25

Yu, Jian Hai, and Chang Chun Dong. "A New Design of CMOS Bandgap Reference Based on Genetic Algorithm." Advanced Materials Research 712-715 (June 2013): 1780–86. http://dx.doi.org/10.4028/www.scientific.net/amr.712-715.1780.

Full text

Abstract:

A new CMOS bandgap reference which is optimized by adaptive GA(genetic algorithm) is presented in this paper. During the optimization of the parameters, according to the different specifications, the idea which looks on secondary targets as the boundary restrictions is proposed, so that the problem of multi-objective normalization is solved. The secondary optimizing method about coarse adjusting initially, meticulous adjusting successively is proposed in the optimization based on adaptive Genetic Algorithm. The simulation results which have reached the leading standard of industry indicate the advantage and validity of the method comparing with other method used in the design of bandgap references.

APA, Harvard, Vancouver, ISO, and other styles

26

Banu, Viorel, Pierre Brosselard, Xavier Jordá, Phillippe Godignon, and José Millan. "Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material." Materials Science Forum 645-648 (April 2010): 1131–34. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1131.

Full text

Abstract:

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.

APA, Harvard, Vancouver, ISO, and other styles

27

Song, Ailing, Xiaopeng Wang, Tianning Chen, and Lele Wan. "Band structures in a two-dimensional phononic crystal with rotational multiple scatterers." International Journal of Modern Physics B 31, no. 06 (March 5, 2017): 1750038. http://dx.doi.org/10.1142/s0217979217500382.

Full text

Abstract:

In this paper, the acoustic wave propagation in a two-dimensional phononic crystal composed of rotational multiple scatterers is investigated. The dispersion relationships, the transmission spectra and the acoustic modes are calculated by using finite element method. In contrast to the system composed of square tubes, there exist a low-frequency resonant bandgap and two wide Bragg bandgaps in the proposed structure, and the transmission spectra coincide with band structures. Specially, the first bandgap is based on locally resonant mechanism, and the simulation results agree well with the results of electrical circuit analogy. Additionally, increasing the rotation angle can remarkably influence the band structures due to the transfer of sound pressure between the internal and external cavities in low-order modes, and the redistribution of sound pressure in high-order modes. Wider bandgaps are obtained in arrays composed of finite unit cells with different rotation angles. The analysis results provide a good reference for tuning and obtaining wide bandgaps, and hence exploring the potential applications of the proposed phononic crystal in low-frequency noise insulation.

APA, Harvard, Vancouver, ISO, and other styles

28

Zawawi, Ruhaifi Abdullah, and Othman Sidek. "A new curvature-corrected CMOS bandgap voltage reference." IEICE Electronics Express 9, no. 4 (2012): 240–44. http://dx.doi.org/10.1587/elex.9.240.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Keat, ChongWei, Jeevan Kanesan, and Harikrishnan Ramiah. "Low-voltage, High-precision Bandgap Current Reference Circuit." IETE Journal of Research 58, no. 6 (2012): 501. http://dx.doi.org/10.4103/0377-2063.106760.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Zhou, Qian Neng, Rong Xue, Hong Juan Li, Jin Zhao Lin, Yun Song Li, Yu Pang, Qi Li, Guo Quan Li, and Lu Deng. "A Sub-1V High Precision CMOS Bandgap Reference." Applied Mechanics and Materials 427-429 (September 2013): 1097–100. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.1097.

Full text

Abstract:

In this paper, a low temperature coefficient bandgap voltage (BGR) is designed for A/D converter by adopting piecewise-linear compensation technique. The designed BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the PSRR of the designed BGR achieves-72.51dB, -72.49dB, and-70.58dB at 10Hz, 100Hz and 1kHz respectively. The designed BGR achieve the temperature coefficient of 1.57 ppm/°C when temperature is in the range from-35°C to 125°C. When power supply voltage VDD changes from 1V to 7V, the deviation of the designed BGR output voltage VREF is only 4.465μV.

APA, Harvard, Vancouver, ISO, and other styles

31

Auer, Mario, and Varvara Bezhenova. "A radiation-hard curvature compensated bandgap voltage reference." e & i Elektrotechnik und Informationstechnik 135, no. 1 (February 2018): 3–9. http://dx.doi.org/10.1007/s00502-018-0591-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Becker-Gomez, A., T. Lakshmi Viswanathan, and T. R. Viswanathan. "A Low-Supply-Voltage CMOS Sub-Bandgap Reference." IEEE Transactions on Circuits and Systems II: Express Briefs 55, no. 7 (July 2008): 609–13. http://dx.doi.org/10.1109/tcsii.2008.921580.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Perry, Raymond T., Stephen H. Lewis, A. Paul Brokaw, and T. R. Viswanathan. "A 1.4 V Supply CMOS Fractional Bandgap Reference." IEEE Journal of Solid-State Circuits 42, no. 10 (October 2007): 2180–86. http://dx.doi.org/10.1109/jssc.2007.905236.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Nicollini, G., and D. Senderowicz. "A CMOS bandgap reference for differential signal processing." IEEE Journal of Solid-State Circuits 26, no. 1 (1991): 41–50. http://dx.doi.org/10.1109/4.65708.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Filanovsky, I. M., and Sean S. Cai. "BiCMOS bandgap voltage reference with base current compensation." International Journal of Electronics 81, no. 5 (November 1996): 565–70. http://dx.doi.org/10.1080/002072196136463.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Razavi, Behzad. "The Bandgap Reference [A Circuit for All Seasons]." IEEE Solid-State Circuits Magazine 8, no. 3 (2016): 9–12. http://dx.doi.org/10.1109/mssc.2016.2577978.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Ivanov, V. G., and V. V. Losev. "Design Automation Technique of Silicon Bandgap Voltage Reference." Russian Microelectronics 47, no. 7 (November 2018): 498–503. http://dx.doi.org/10.1134/s1063739718070041.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Ainspan, H. A., and C. S. Webster. "Measured results on bandgap reference in SiGe BiCMOS." Electronics Letters 34, no. 15 (1998): 1441. http://dx.doi.org/10.1049/el:19981061.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Avoinne, C., T. Rashid, V. Chowdhury, W. Rahajandraïbe, and C. Dufaza. "Second-order compensated bandgap reference with convex correction." Electronics Letters 41, no. 5 (2005): 276. http://dx.doi.org/10.1049/el:20057071.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Guang, Yang, Bin Yu, and Huang Hai. "Design of a High Performance CMOS Bandgap Voltage Reference." Advanced Materials Research 981 (July 2014): 90–93. http://dx.doi.org/10.4028/www.scientific.net/amr.981.90.

Full text

Abstract:

Bandgap voltage reference, to provide a temperature and power supply insensitive output voltage, is a very important module in the analog integrated circuits and mixed-signal integrated circuits. In this paper, a high performance CMOS bandgap with low-power consumption has been designed. It can get the PTAT (Proportional to absolute temperature) current, and then get the reference voltage. Based on 0.35μm CMOS process, using HSPICE 2008 software for circuit simulation, the results showed that , when the temperature changes from -40 to 80 °C, the proposed circuit’s reference voltage achieve to 1.2V, temperature coefficient is 3.09ppm/°C. Adopt a series of measures, like ESD protection circuit, in layout design. The ultimately design through the DRC and LVS verification, and the final layout size is 700μm * 560μm.

APA, Harvard, Vancouver, ISO, and other styles

41

Lee, Min Chin, and Chi Jing Hu. "A CMOS Bandgap References Voltage Circuit Using Current Conveyor for Power Management Applications." Applied Mechanics and Materials 385-386 (August 2013): 1335–39. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.1335.

Full text

Abstract:

This paper proposes a low power bandgap reference voltage circuit that provides an output reference voltage close to the bandgap voltage having a low output resistance and allows resistive loading. This proposed circuit is design and implemented using the TSMC 0.18μm 1P6M CMOS process. Simulation and measured results verify that the chip size is with power dissipation about 0.1mW, and the operation temperature range formwith temperature coefficient about . The chip supply voltage can from 1.3 to 1.8V with PSRR about 70 dB, and its output reference voltage can stable on .

APA, Harvard, Vancouver, ISO, and other styles

42

Park, Chang-Bum, and Shin-Il Lim. "A Sub-1V Nanopower CMOS Only Bandgap Voltage Reference." Journal of IKEEE 20, no. 2 (June 30, 2016): 192–95. http://dx.doi.org/10.7471/ikeee.2016.20.2.192.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

BOGODA APPUHAMYLAGE, Indika U. K., Shunsuke OKURA, Toru IDO, and Kenji TANIGUCHI. "An Area-Efficient, Low-Power CMOS Fractional Bandgap Reference." IEICE Transactions on Electronics E94-C, no. 6 (2011): 960–67. http://dx.doi.org/10.1587/transele.e94.c.960.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Lv, Jian, Linhai Wei, and Simon S. Ang. "A new curvature-compensated, high-PSRR CMOS bandgap reference." Analog Integrated Circuits and Signal Processing 82, no. 3 (January 30, 2015): 675–82. http://dx.doi.org/10.1007/s10470-015-0494-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Liu, Xi, Qian Liu, Xiaoshi Jin, Yongrui Zhao, and Lee Jong-Ho. "Negative voltage bandgap reference with multilevel curvature compensation technique." Journal of Semiconductors 37, no. 5 (May 2016): 055008. http://dx.doi.org/10.1088/1674-4926/37/5/055008.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Saponara, Sergio. "Integrated Bandgap Voltage Reference for High Voltage Vehicle Applications." Journal of Circuits, Systems and Computers 24, no. 08 (August 12, 2015): 1550125. http://dx.doi.org/10.1142/s021812661550125x.

Full text

Abstract:

This work presents a bandgap voltage reference (BGR) integrated in 0.25-μm bipolar-CMOS-DMOS (BCD) technology. The BGR circuit generates a reference voltage of 1.22 V. It is able to withstand large supply voltage variations of vehicle applications from 4.5 V, e.g., in case of cranking, up to 60-V, maximum value in case of emerging 48-V battery systems for hybrid and electrical vehicles. The circuit has an embedded high-voltage (HV) pseudo-regulator block that provides a more stable internal supply rail for a cascaded low-voltage bandgap core. HV MOS are used only in the pre-regulator block thus allowing the design of a BGR with compact size. The proposed architecture permits to withstand large input voltage variations with a temperature drift of a hundred of ppm/°C, a line regulation (LR) of few mV/V versus the external supply voltage and a power supply rejection ratio (PSRR) higher than 90 dB.

APA, Harvard, Vancouver, ISO, and other styles

47

Kui, Wei, and Jianyang Zhou. "A Bandgap Reference Circuit with 2nd Order Curvature Correction." Physics Procedia 33 (2012): 1849–55. http://dx.doi.org/10.1016/j.phpro.2012.05.294.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Que, Longcheng, Daogang Min, Linhai Wei, Yun Zhou, and Jian Lv. "A high PSRR bandgap voltage reference with piecewise compensation." Microelectronics Journal 95 (January 2020): 104660. http://dx.doi.org/10.1016/j.mejo.2019.104660.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Redoute, J. M., and M. Steyaert. "Kuijk Bandgap Voltage Reference With High Immunity to EMI." IEEE Transactions on Circuits and Systems II: Express Briefs 57, no. 2 (February 2010): 75–79. http://dx.doi.org/10.1109/tcsii.2009.2037991.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Yueming Jiang and E. K. F. Lee. "Design of low-voltage bandgap reference using transimpedance amplifier." IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 47, no. 6 (June 2000): 552–55. http://dx.doi.org/10.1109/82.847072.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!