Relevant bibliographies by topics / Bandgap references

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  1. Journal articles

Academic literature on the topic 'Bandgap references'

Author: Grafiati
Published: 4 June 2021
Last updated: 10 February 2022

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Journal articles on the topic "Bandgap references"

1

Inyeol Lee, Gyudong Kim, and Wonchan Kim. "Exponential curvature-compensated BiCMOS bandgap references." IEEE Journal of Solid-State Circuits 29, no. 11 (1994): 1396–403. http://dx.doi.org/10.1109/4.328634.

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2

Annema, A. J. "Low-power bandgap references featuring DTMOSTs." IEEE Journal of Solid-State Circuits 34, no. 7 (1999): 949–55. http://dx.doi.org/10.1109/4.772409.

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3

van Staveren, A., C. J. M. Verhoeven, and A. H. M. van Roermund. "The design of low-noise bandgap references." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 43, no. 4 (1996): 290–300. http://dx.doi.org/10.1109/81.488808.

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4

Abesingha, B., G. A. Rincon-Mora, and D. Briggs. "Voltage shift in plastic-packaged bandgap references." IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 49, no. 10 (2002): 681–85. http://dx.doi.org/10.1109/tcsii.2002.806734.

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5

Wang, Doudou, Changlong Mu, Baihong Li, and Jing Yang. "Electrically Tunable Propagation Properties of the Liquid Crystal-Filled Terahertz Fiber." Applied Sciences 8, no. 12 (2018): 2487. http://dx.doi.org/10.3390/app8122487.

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A bandgap-guiding microstructured fiber for terahertz (THz) radiation was designed by infiltrating the cladding air holes with nematic liquid crystal. Structural parameter dependence of the photonic bandgaps, polarization-dependent bandgap splitting, and electrically tunable propagation properties of the designed fiber were investigated theoretically by using the finite-element method. An external electric field applied across the designed fiber can broaden the effective transmission bandwidth and achieve single-mode single-polarization guidance. Flattened near-zero group-velocity dispersion of 0 ± 1 ps/THz/cm was obtained for the y-polarized fundamental mode within a broad frequency range. Our results provide theoretical references for applications of liquid crystal-filled microstructured fiber for dynamic polarization control and tunable fiber devices in THz frequency.
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6

Fiori, F., and P. S. Crovetti. "Investigation on RFI effects in bandgap voltage references." Microelectronics Journal 35, no. 6 (2004): 557–61. http://dx.doi.org/10.1016/j.mejo.2003.11.002.

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7

Tuominen, J., T. Ritari, H. Ludvigsen, and J. C. Petersen. "Gas filled photonic bandgap fibers as wavelength references." Optics Communications 255, no. 4-6 (2005): 272–77. http://dx.doi.org/10.1016/j.optcom.2005.06.021.

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8

Banu, Viorel, Phillippe Godignon, Xavier Jordá, Mihaela Alexandru, and José Millan. "Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications." Materials Science Forum 679-680 (March 2011): 754–57. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.754.

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This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.
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9

Lee, Min Chin, and Chi Jing Hu. "A CMOS Bandgap References Voltage Circuit Using Current Conveyor for Power Management Applications." Applied Mechanics and Materials 385-386 (August 2013): 1335–39. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.1335.

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This paper proposes a low power bandgap reference voltage circuit that provides an output reference voltage close to the bandgap voltage having a low output resistance and allows resistive loading. This proposed circuit is design and implemented using the TSMC 0.18μm 1P6M CMOS process. Simulation and measured results verify that the chip size is with power dissipation about 0.1mW, and the operation temperature range formwith temperature coefficient about . The chip supply voltage can from 1.3 to 1.8V with PSRR about 70 dB, and its output reference voltage can stable on .
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10

Falconi, Christian, Arnaldo D’Amico, Corrado Di Natale, and Marco Faccio. "Low cost curvature correction of bandgap references for integrated sensors." Sensors and Actuators A: Physical 117, no. 1 (2005): 127–36. http://dx.doi.org/10.1016/j.sna.2004.05.030.

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