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Journal articles on the topic 'Bandgap references'

Author: Grafiati

Published: 4 June 2021

Last updated: 10 February 2022

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1

Inyeol Lee, Gyudong Kim, and Wonchan Kim. "Exponential curvature-compensated BiCMOS bandgap references." IEEE Journal of Solid-State Circuits 29, no. 11 (1994): 1396–403. http://dx.doi.org/10.1109/4.328634.

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2

Annema, A. J. "Low-power bandgap references featuring DTMOSTs." IEEE Journal of Solid-State Circuits 34, no. 7 (July 1999): 949–55. http://dx.doi.org/10.1109/4.772409.

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3

van Staveren, A., C. J. M. Verhoeven, and A. H. M. van Roermund. "The design of low-noise bandgap references." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 43, no. 4 (April 1996): 290–300. http://dx.doi.org/10.1109/81.488808.

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4

Abesingha, B., G. A. Rincon-Mora, and D. Briggs. "Voltage shift in plastic-packaged bandgap references." IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 49, no. 10 (October 2002): 681–85. http://dx.doi.org/10.1109/tcsii.2002.806734.

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5

Wang, Doudou, Changlong Mu, Baihong Li, and Jing Yang. "Electrically Tunable Propagation Properties of the Liquid Crystal-Filled Terahertz Fiber." Applied Sciences 8, no. 12 (December 4, 2018): 2487. http://dx.doi.org/10.3390/app8122487.

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A bandgap-guiding microstructured fiber for terahertz (THz) radiation was designed by infiltrating the cladding air holes with nematic liquid crystal. Structural parameter dependence of the photonic bandgaps, polarization-dependent bandgap splitting, and electrically tunable propagation properties of the designed fiber were investigated theoretically by using the finite-element method. An external electric field applied across the designed fiber can broaden the effective transmission bandwidth and achieve single-mode single-polarization guidance. Flattened near-zero group-velocity dispersion of 0 ± 1 ps/THz/cm was obtained for the y-polarized fundamental mode within a broad frequency range. Our results provide theoretical references for applications of liquid crystal-filled microstructured fiber for dynamic polarization control and tunable fiber devices in THz frequency.

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6

Fiori, F., and P. S. Crovetti. "Investigation on RFI effects in bandgap voltage references." Microelectronics Journal 35, no. 6 (June 2004): 557–61. http://dx.doi.org/10.1016/j.mejo.2003.11.002.

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7

Tuominen, J., T. Ritari, H. Ludvigsen, and J. C. Petersen. "Gas filled photonic bandgap fibers as wavelength references." Optics Communications 255, no. 4-6 (November 2005): 272–77. http://dx.doi.org/10.1016/j.optcom.2005.06.021.

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8

Banu, Viorel, Phillippe Godignon, Xavier Jordá, Mihaela Alexandru, and José Millan. "Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications." Materials Science Forum 679-680 (March 2011): 754–57. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.754.

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This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap voltage reference using SiC Schottky diodes [1]. The present work completes the investigation on SiC bandgap reference by the using of SiC bipolar diodes. Simulated and experimental results for two different SiC devices: Schottky and bipolar diodes showed that the principles that govern the bandgap voltage references for Si are also valid for the SiC. A comparison between the output voltage levels of the two types of bandgap reference is also presented.

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9

Lee, Min Chin, and Chi Jing Hu. "A CMOS Bandgap References Voltage Circuit Using Current Conveyor for Power Management Applications." Applied Mechanics and Materials 385-386 (August 2013): 1335–39. http://dx.doi.org/10.4028/www.scientific.net/amm.385-386.1335.

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This paper proposes a low power bandgap reference voltage circuit that provides an output reference voltage close to the bandgap voltage having a low output resistance and allows resistive loading. This proposed circuit is design and implemented using the TSMC 0.18μm 1P6M CMOS process. Simulation and measured results verify that the chip size is with power dissipation about 0.1mW, and the operation temperature range formwith temperature coefficient about . The chip supply voltage can from 1.3 to 1.8V with PSRR about 70 dB, and its output reference voltage can stable on .

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10

Falconi, Christian, Arnaldo D’Amico, Corrado Di Natale, and Marco Faccio. "Low cost curvature correction of bandgap references for integrated sensors." Sensors and Actuators A: Physical 117, no. 1 (January 2005): 127–36. http://dx.doi.org/10.1016/j.sna.2004.05.030.

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11

Li, Xuefeng, Jinxing Liang, Yury Zimin, Yupeng Zhang, Shuo Lin, and Toshitsugu Ueda. "U-Band Wavelength References Based on Photonic Bandgap Fiber Technology." Journal of Lightwave Technology 29, no. 19 (October 2011): 2934–39. http://dx.doi.org/10.1109/jlt.2011.2163383.

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12

Krstić, D. "Structured electronic design — high-performance harmonic oscillators and bandgap references." Microelectronics Journal 32, no. 12 (December 2001): 1049. http://dx.doi.org/10.1016/s0026-2692(01)00117-3.

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13

Saidane, A. "Structured Electronic Design: High-performance Harmonic Oscillators and Bandgap References." Microelectronics Journal 33, no. 5-6 (May 2002): 509. http://dx.doi.org/10.1016/s0026-2692(02)00005-8.

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14

Hedayati, Raheleh, Luigia Lanni, Ana Rusu, and Carl-Mikael Zetterling. "Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC." IEEE Electron Device Letters 37, no. 2 (February 2016): 146–49. http://dx.doi.org/10.1109/led.2015.2508064.

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15

Yu, Jian Hai, and Chang Chun Dong. "A New Design of CMOS Bandgap Reference Based on Genetic Algorithm." Advanced Materials Research 712-715 (June 2013): 1780–86. http://dx.doi.org/10.4028/www.scientific.net/amr.712-715.1780.

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A new CMOS bandgap reference which is optimized by adaptive GA(genetic algorithm) is presented in this paper. During the optimization of the parameters, according to the different specifications, the idea which looks on secondary targets as the boundary restrictions is proposed, so that the problem of multi-objective normalization is solved. The secondary optimizing method about coarse adjusting initially, meticulous adjusting successively is proposed in the optimization based on adaptive Genetic Algorithm. The simulation results which have reached the leading standard of industry indicate the advantage and validity of the method comparing with other method used in the design of bandgap references.

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16

Tajalli, Armin, Mohammad Chahardori, and Abbas Khodaverdi. "An area and power optimization technique for CMOS bandgap voltage references." Analog Integrated Circuits and Signal Processing 62, no. 2 (July 30, 2009): 131–40. http://dx.doi.org/10.1007/s10470-009-9344-4.

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17

Fruett, F., G. C. M. Meijer, and A. Bakker. "Minimization of the mechanical-stress-induced inaccuracy in bandgap voltage references." IEEE Journal of Solid-State Circuits 38, no. 7 (July 2003): 1288–91. http://dx.doi.org/10.1109/jssc.2003.813286.

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18

Eberlein, M., H. Pretl, and Z. Georgiev. "Time-Controlled and FinFET Compatible Sub-Bandgap References Using Bulk-Diodes." IEEE Transactions on Circuits and Systems II: Express Briefs 66, no. 10 (October 2019): 1608–12. http://dx.doi.org/10.1109/tcsii.2019.2929599.

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19

Grella, K., S. Dreiner, A. Schmidt, W. Heiermann, H. Kappert, H. Vogt, and U. Paschen. "High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (January 1, 2012): 000227–32. http://dx.doi.org/10.4071/hitec-2012-wp15.

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Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 °C. In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metalization with excellent reliability concerning electromigration, voltage independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were also characterized up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.

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20

Giustolisi, G., and G. Palumbo. "A detailed analysis of power-supply noise attenuation in bandgap voltage references." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 50, no. 2 (February 2003): 185–97. http://dx.doi.org/10.1109/tcsi.2002.808188.

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21

Hsu, H. "Structured electronic design, high-performance harmonic oscillators and bandgap references [Book Review]." IEEE Circuits and Devices Magazine 17, no. 5 (September 2001): 41–42. http://dx.doi.org/10.1109/mcd.2001.960688.

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22

Palumbo, G. "Voltage references: from diodes to precision high-order bandgap circuits [Book Review]." IEEE Circuits and Devices Magazine 18, no. 5 (September 2002): 45. http://dx.doi.org/10.1109/mcd.2002.1035357.

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23

Liu, Nanqi, Randall L. Geiger, and Degang Chen. "Sub-ppm/°C Bandgap References With Natural Basis Expansion for Curvature Cancellation." IEEE Transactions on Circuits and Systems I: Regular Papers 68, no. 9 (September 2021): 3551–61. http://dx.doi.org/10.1109/tcsi.2021.3096166.

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24

Banu, Viorel, Pierre Brosselard, Xavier Jordá, Phillippe Godignon, and José Millan. "Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material." Materials Science Forum 645-648 (April 2010): 1131–34. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1131.

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This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.

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25

vanStaveren, A., C. J. M. Verhoeven, and A. H. M. vanRoermund. "The influence of the reverse Early effect on the performance of bandgap references." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 43, no. 5 (May 1996): 418. http://dx.doi.org/10.1109/81.502214.

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26

Chen, S. B., and Z. Y. Zhong. "Optical and Dielectric Characteristics of Photoactive Layer Thin Films for Organic Photovoltaic Cells." Applied Mechanics and Materials 217-219 (November 2012): 695–98. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.695.

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The thin films of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH- PPV) used as photoactive layer in organic photovoltaic cells were prepared on glass substrates by the spin-coating technique. The transmittance spectra of thin films were measured by a double beam spectrophotometer. The optical constants such as refractive index and extinction coefficient of the thin films were determined from the measured transmittance spectra using the method of whole optical spectrum fitting. The complex dielectric constant and the complex optical conductivity of the thin films were obtained. In addition, the optical bandgap of the thin film were calculated according to the Tauc's law. The results show that the thin films exhibit direct allowed transitions and the optical bandgap is about 2.18 eV. These results provide some useful references for the design and optimization of device structure in organic photovoltaic cells.

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27

Boni, A. "Op-amps and startup circuits for CMOS bandgap references with near 1-V supply." IEEE Journal of Solid-State Circuits 37, no. 10 (October 2002): 1339–43. http://dx.doi.org/10.1109/jssc.2002.803055.

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28

Motz, Mario, Udo Ausserlechner, and Michael Holliber. "Compensation of Mechanical Stress-Induced Drift of Bandgap References With On-Chip Stress Sensor." IEEE Sensors Journal 15, no. 9 (September 2015): 5115–21. http://dx.doi.org/10.1109/jsen.2015.2433292.

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29

Mattia, O. E., H. Klimach, and S. Bampi. "Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references." Electronics Letters 50, no. 12 (June 2014): 863–64. http://dx.doi.org/10.1049/el.2013.3417.

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30

Zhong, Zhi You, C. Y. Yang, and J. H. Gu. "Optical Characterization and XPS Study of ZnGa₂O₄ Thin Films for Organic Solar Cells." Applied Mechanics and Materials 143-144 (December 2011): 199–203. http://dx.doi.org/10.4028/www.scientific.net/amm.143-144.199.

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Transparent conductive ZnGa2O4thin films were prepared by magnetron sputtering. The chemical state of O, Zn and Ga in the deposited films was investigated by X-ray photoelectron spectroscopy (XPS), and the optical properties were characterized by optical transmittance spectra. The XPS studies reveal that no metallic Zn and Ga were detected in the ZnGa2O4thin films, and Zn and Ga exist only in oxidized state. The optical bandgap was calculated by Tauc's theory and the optical constants were determined using Swanepoel's method. Furthermore, the dispersion behavior of the refractive index was studied by means of single-oscillator model, and the physical parameters and the refractive index dispersion parameter were obtained. The results provide some useful references for the potential application of the ZnGa2O4thin films in optoelectronic devices.

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31

Yu-Chen, Li. "Evaluation of the Key Physical Parameters of Compressive Strained Ge1-x Snx for Optoelectronic Devices." Journal of Computational and Theoretical Nanoscience 13, no. 10 (October 1, 2016): 7399–407. http://dx.doi.org/10.1166/jctn.2016.5733.

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Both strain technology and alloying technology can change the band structures of Germanium semiconductor. This paper focus on evaluation of the key physical parameters, such as energy levels and effective mass, of germanium under strain and alloy conditions, on the basis of deformation potential theory and kp perturbation theory. The results show that: (1), The bandgap transition in Ge1-xSnx alloy cannot occur under strain. So the transformation efficiency of the strained Ge1-xSnx/(001)Ge based devices can not be improved; (2), The various hole effective masses of strained Ge1-xSnx/(001)Ge decrease with the increase of the stress, which benefits to the pMOS performance improvement. Our valid models can provide the valuable references to the design of modified Ge semiconductor and optoelectronic devices.

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32

Lam, Yat-Hei, and Wing-Hung Ki. "CMOS Bandgap References With Self-Biased Symmetrically Matched Current–Voltage Mirror and Extension of Sub-1-V Design." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 18, no. 6 (June 2010): 857–65. http://dx.doi.org/10.1109/tvlsi.2009.2016204.

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33

Shi, Jun. "Bandgap Reference Layout Analysis and Design." International Journal of Information and Electronics Engineering 9, no. 1 (March 2019): 1–6. http://dx.doi.org/10.18178/ijiee.2019.9.1.695.

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34

Kim, Jae-Bung, and Seong-Ik Cho. "Modified Low-Votlage CMOS Bandgap Voltage Reference with CTAT Compensation." Transactions of The Korean Institute of Electrical Engineers 61, no. 5 (May 1, 2012): 753–56. http://dx.doi.org/10.5370/kiee.2012.61.5.753.

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35

Zhang, Chaoping, Robert Gallichan, David Budgett, and Daniel McCormick. "A Capacitive Pressure Sensor Interface IC with Wireless Power and Data Transfer." Micromachines 11, no. 10 (September 27, 2020): 897. http://dx.doi.org/10.3390/mi11100897.

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This paper presents a capacitive pressure sensor interface circuit design in 180 nm XH018 CMOS technology for an implantable capacitive pressure sensor, which has a wireless power supply and wireless data transfer function. It integrates full-bridge rectifiers, shorting control switches, low-dropout regulators, bandgap references, analog front end, single slope analog to digital converter (ADC), I2C, and an RC oscillator. The low-dropout regulators regulate the wireless power supply coming from the rectifier and provide a stable and accurate 1.8 V DC voltage to other blocks. The capacitance of the pressure sensor is sampled to a discrete voltage by the analog front end. The single slope ADC converts the discrete voltage into 11 bits of digital data, which is then converted into 1 kbps serial data out by the I2C block. The “1” of serial data is modulated to a 500 kHz digital signal that is used to control the shorting switch for wireless data transfer via inductive back scatter. This capacitive pressure sensor interface IC has a resolution of 0.98 mmHg (1.4 fF), average total power consumption of 7.8 mW, and ±3.2% accuracy at the worst case under a −20 to 80 °C temperature range, which improves to ±0.86% when operated between 20 and 60 °C.

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36

Hande, Vinayak, and Maryam Shojaei Baghini. "Survey of Bandgap and Non-bandgap based Voltage Reference Techniques." Scientia Iranica 23, no. 6 (October 1, 2016): 2845–61. http://dx.doi.org/10.24200/sci.2016.3994.

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37

Tian, XingGuo, XiaoNing Xin, and DongYang Han. "A high precision bandgap voltage reference." MATEC Web of Conferences 232 (2018): 04072. http://dx.doi.org/10.1051/matecconf/201823204072.

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In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient. In this paper, the basic implementation principle of the bandgap reference is analyzed.On the basis of the traditional bandgap reference circuit structure,this design adds a trimming network and a temperature compensation network. A new Gaussian bell curve compensation technique is adopted to compensate the low temperature section, and the normal temperature section and the high temperature section respectively. Compared with the existing compensation technology, the versatility and the compensation effect is better. The designed circuit is designed and manufactured based on the Huahong HHNECGE0.35um process. The results show that the output voltage is 2.5V at 2.7V supply voltage and temperature range of -40-125°C.at typical process angle ,the temperature coefficient is 0.54618 PPm/°C,and is within 1PPm/°C at other process angles.

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38

Ye, Rong Ke, and Rong Bin Hu. "A Bandgap Reference with High Order Temperature Compensation." Advanced Materials Research 1049-1050 (October 2014): 649–52. http://dx.doi.org/10.4028/www.scientific.net/amr.1049-1050.649.

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A kind of CMOS bandgap reference circuit with high order temperature compensation is introduced [1]. Compared to the traditional circuit, the bandgap reference proposed here has several advantages such as better temperature stability, smaller chip area, lower power consumption, self-power-on, and so on. Our design can be used in analog-to-digital or digital-to-analog converters, where high performance bandgap reference is required.

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39

Qu, Wei, Li Mei Hou, Xiao Xin Sun, Jing Yu Sun, and Liang Yu Li. "The Design of Bandgap Reference Based on Empyrean Aether Software." Applied Mechanics and Materials 687-691 (November 2014): 3489–93. http://dx.doi.org/10.4028/www.scientific.net/amm.687-691.3489.

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A high-performance bandgap reference voltage source design method is proposed in this paper, according to the shortcomings of traditional bandgap reference voltage source. This method combined CSMC 0.35μm CMOS process with Aether software technology, enabling to improve the bandgap reference source op amp performance and take into account accuracy and stability of the system. From the experimental results: this bandgap reference voltage source output voltage has changed about 63 mV when the temperature varied from to , and the line regulator is 0.4mV/V when the power supply voltage varied from 3.2V to 3.3V. This system has advantages of high accuracy and good stability.

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40

Ren, Ming Yuan, and En Ming Zhao. "A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C." Advanced Materials Research 981 (July 2014): 66–69. http://dx.doi.org/10.4028/www.scientific.net/amr.981.66.

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This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

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41

Mitrea, O., C. Popa, A. M. Manolescu, and M. Glesner. "A curvature-corrected CMOS bandgap reference." Advances in Radio Science 1 (May 5, 2005): 181–84. http://dx.doi.org/10.5194/ars-1-181-2003.

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Abstract. This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the VBE(T ) expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35µm 3Metal/2Poly CMOS technology and the chip area is approximately 70µm × 110µm. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW.

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42

Dai *, Yihong, Donald T. Comer, and David J. Comer. "A GaAs HBT bandgap voltage reference." International Journal of Electronics 92, no. 2 (February 2005): 87–97. http://dx.doi.org/10.1080/00207210412331332853.

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43

Cherry, E. M. "2-Terminal floating bandgap voltage reference." IEE Proceedings - Circuits, Devices and Systems 152, no. 6 (2005): 729. http://dx.doi.org/10.1049/ip-cds:20045130.

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44

Buck, A. E., C. L. McDonald, S. H. Lewis, and T. R. Viswanathan. "A CMOS bandgap reference without resistors." IEEE Journal of Solid-State Circuits 37, no. 1 (2002): 81–83. http://dx.doi.org/10.1109/4.974548.

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45

Chen, Xi, Liang Li, Xing Fa Huang, Xiao Feng Shen, and Ming Yuan Xu. "A CMOS Bandgap Reference with Temperature Compensation." Applied Mechanics and Materials 667 (October 2014): 401–4. http://dx.doi.org/10.4028/www.scientific.net/amm.667.401.

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This paper has presented a bandgap reference circuit with high-order temperature compensation. The compensation technique is achieved by using MOS transistor operating in sub-threshold region for reducing high-order TC of Vbe. The circuit is designed in 0.18¦Ìm CMOS process. Simulation results show that the proposed circuit achieves 4.2 ppm/¡æ with temperature from-55 to 125 ¡æ, which is only a third than that of first-order compensated bandgap reference.

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46

Wang, Songlin, Shuang Feng, Hui Wang, Yu Yao, Jinhua Mao, and Xinquan Lai. "A novel high accuracy bandgap reference voltage source." Circuit World 43, no. 4 (November 6, 2017): 141–44. http://dx.doi.org/10.1108/cw-04-2017-0019.

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Purpose This paper aims to design a new bandgap reference circuit with complementary metal–oxide–semiconductor (CMOS) technology. Design/methodology/approach Different from the conventional bandgap reference circuit with operational amplifiers, this design directly connects the two bases of the transistors with both the ends of the resistor. The transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of low dropout regulator (LDO) regulator circuit, at last to realize the temperature control. In addition, introducing the depletion-type metal–oxide–semiconductor transistor and the transistor operating in the saturation region through the connection of the novel circuit structure makes a further improvement on the performance of the whole circuit. Findings This design is base on the 0.18?m process of BCD, and the new bandgap reference circuit is verified. The results show that the circuit design not only is simple and novel but also can effectively improve the performance of the circuit. Bandgap voltage reference is an important module in integrated circuits and electronic systems. To improve the stability and performance of the whole circuit, simple structure of the bandgap reference voltage source is essential for a chip. Originality/value This paper adopts a new circuit structure, which directly connects the two base voltages of the transistors with the resistor. And the transistor acts as an amplifier to amplify the change of voltage, which is convenient for the feedback regulation of LDO regulator circuit, at last to realize the temperature control.

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47

Clemens, B. M., and J. A. Bain. "Stress Determination in Textured Thin Films Using X-Ray Diffraction." MRS Bulletin 17, no. 7 (July 1992): 46–51. http://dx.doi.org/10.1557/s0883769400041658.

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Thin film stresses are important in many areas of technology. In the semiconductor industry, metal interconnects are prone to stress voiding and hillock formation. Stresses in passivation layers can lead to excessive substrate curvature which can cause alignment difficulty in subsequent lithographic processing. In other thin film applications, stresses can cause peeling from mechanical failure at the film-substrate interface. Beyond these issues of reliability, stress and the resulting strain can be used to tune the properties of thin film materials. For instance, strain, coupled with the magnetostrictive effect, can be utilized to induce the preferred magnetization direction. Also, epitaxial strains can be used to adjust the bandgap of semiconductors. Finally, the anomalous mechanical properties of multilayered materials are thought to be partially due to the extreme strain states in the constituents of these materials. To fully optimize thin film performance, a fundamental understanding of the causes and effects of thin film stress is needed. These studies in turn rely on detailed characterization of the stress and strain state of thin films.X-ray diffraction and the elastic response of materials provide a powerful method for determining stresses. Stresses alter the spacing of crystallographic planes in crystals by amounts easily measured by x-ray diffraction. Each set of crystal planes can act as an in-situ strain gauge, which can be probed by x-ray diffraction in the appropriate geometry. Hence it is not surprising that x-ray diffraction is one of the most widely used techniques for determining stress and strain in materials. (For reviews of this topic, see References 5–7.) This article is a tutorial on the use of x-ray diffraction to extract the stress state and the unstrained lattice parameter from thin films. We present a handbook of useful results that can be widely applied and should be mastered by anyone seriously interested in stresses in crystalline thin films with a crystallographic growth texture.

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Zhou, Qian Neng, Yun Song Li, Jin Zhao Lin, Hong Juan Li, Chen Li, Yu Pang, Guo Quan Li, Xue Mei Cai, and Qi Li. "A High-Order CMOS Bandgap Voltage Reference." Advanced Materials Research 989-994 (July 2014): 1165–68. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.1165.

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A high-order bandgap voltage reference (BGR) is designed by adopting a current which is proportional to absolute temperature T1.5. The high-order BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the designed high-order BGR achieves temperature coefficient of 2.54ppm/°C when temperature ranging from-55°C to 125°C. The high-order BGR at 10Hz, 100Hz, 1kHz, 10kHz and 100kHz achieves, respectively, the power supply rejection ratio of-64.01dB, -64.01dB, -64dB, -63.5dB and-53.2dB. When power supply voltage changes from 1.7V to 2.5V, the output voltage deviation of BGR is only 617.6μV.

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49

Kim, Joo-Seong, Ja-Hyuck Koo, Jea-Ho Lee, and Bai-Sun Kong. "A bandgap reference with resistance variation compensated." IEICE Electronics Express 8, no. 19 (2011): 1602–7. http://dx.doi.org/10.1587/elex.8.1602.

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Hu, Rong Bin, Xiang Cai, and Xiao Ying Zhang. "A Novel BiCMOS Current-Mode Bandgap Reference." Advanced Materials Research 760-762 (September 2013): 1048–52. http://dx.doi.org/10.4028/www.scientific.net/amr.760-762.1048.

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In this paper, a novel BiCMOS current steering bandgap is presented, which includes reference core, start-up circuit, and output circuit, of which the reference core is used to produce the temperature-stable current, the start-up to start up the reference core when powered on, and the output circuit to proportionally transport the reference current to other cells on the same chip. Compared to the traditional voltage-mode bandgap reference, because of the adoption of the current-steering mode, the reference proposed in this paper, has the merits of being immune to variation of the power supply, minimum transport consumption, better matches, temperature stability, smaller area, auto-startup, and so on, which are specially needed in AD/DA application. The simulation shows that the proposed current-mode reference circuit has full temperature range coefficient of 8.9ppm, which is better than that of the traditional voltage-and current-mode reference circuits.

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