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Journal articles on the topic 'BCB etching'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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1

Ishutkin, Sergey, Vadim Arykov, Igor Yunusov, Mikhail Stepanenko, Pavel Troyan, and Yury Zhidik. "Technological Development of an InP-Based Mach–Zehnder Modulator." Symmetry 12, no. 12 (2020): 2015. http://dx.doi.org/10.3390/sym12122015.

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This paper presents the results of the development of a technology for manufacturing electro-optical Mach–Zehnder modulators based on InP. The key features of the technology are the use of one SiNx double-patterned dielectric mask with two sequential inductively coupled plasma (ICP) etchings of the heterostructure for the simultaneous formation of active and passive sections of the modulator’s optical waveguides. This prevents misalignment errors at the borders. The planarization of the wafer surface was performed using photosensitive benzocyclobutene (BCB) films in a combined scheme. Windows

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2

Liew, Li-Anne, D. Boteler, C. Y. Lin, N. Marsiglia, and Y. C. Lee. "Design and Fabrication of a PCB MEMS Module With Integrated Switches and Sensor Suite." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (2015): 001070–122. http://dx.doi.org/10.4071/2015dpc-tp63.

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We demonstrate the feasibility of integrating Kapton-based MEMS capacitive switches and a sensor suite onto a printed circuit board (PCB) with minimal impact to existing manufacturing processes. Copper-cladded kapton laminates were bonded onto rigid PCB substrates with a BCB film spacer. The kapton was patterned using reactive ion etching to produce MEMS structures such as suspended membranes and flexures. Atomic layer deposited alumina coatings were applied as dielectric layers for the capacitive switches and tilt sensors/accelerometers. The copper cladding was also patterned by etching to fu

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3

Zhang, A. Z., S. A. Reshanov, Adolf Schöner, et al. "Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching." Materials Science Forum 821-823 (June 2015): 549–52. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.549.

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In this work, we present a planarization concept for epitaxial SiC trench structures involving reactive ion etching (RIE) and inductive coupled plasma (ICP) dry etching. The general idea is to transfer the flat surface from spun-on BCB/photo-resist layers to deposited silicon dioxide and finally to bulk SiC by applying process conditions with the same etch rate for the different materials. In this way several microns of unwanted material can be removed and planar SiC surfaces are obtained. With this method trench structures filled by epitaxial re-growth can be planarized with smooth surfaces a

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4

Seok, S., N. Rolland, and P. A. Rolland. "Zero-level packaging using BCB adhesive bonding and glass wet-etching for W-band applications." Electronics Letters 42, no. 13 (2006): 755. http://dx.doi.org/10.1049/el:20061103.

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5

Zoschke, Kai, J. U. Kim, M. Wegner, et al. "Laser Direct Patterning of Dry Etch BCB Adhesive Layers for Low Temperature Permanent Wafer-to-Wafer Bonding." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, DPC (2016): 001222–54. http://dx.doi.org/10.4071/2016dpc-wp13.

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To enable advanced wafer level packaging approaches for devices like MEMS, image sensors or optical elements, wafer-to-wafer bonding processes using structured low temperature curable adhesives are required. A lot of Benzocyclobutene (BCB)-based wafer bonding works have been reported in the past showing a broad range of applications and good performance, but also some limitations such as long bond cycles and high cure temperature of 250 °C. In 2013 new process concepts were demonstrated [1], showing that wafer bond cycle time can be reduced to less than 10 min and a post bond batch cure at tem

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6

Seok, S., N. Rolland, and P. A. Rolland. "A novel packaging method using wafer-level BCB polymer bonding and glass wet-etching for RF applications." Sensors and Actuators A: Physical 147, no. 2 (2008): 677–82. http://dx.doi.org/10.1016/j.sna.2008.06.008.

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7

Vitale, Steven A., Heeyeop Chae, and Herbert H. Sawin. "Etching chemistry of benzocyclobutene (BCB) low-kdielectric films in F2+O2 and Cl2+O2 high density plasmas." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18, no. 6 (2000): 2770–78. http://dx.doi.org/10.1116/1.1310655.

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8

Toepper, Michael, Tanja Braun, Robert Gernhardt та ін. "BCB-Based Dry Film low k Permanent Polymer with sub 4-μm Vias for Advanced WLP and FO-WLP Applications". International Symposium on Microelectronics 2015, № 1 (2015): 000079–85. http://dx.doi.org/10.4071/isom-2015-tp33.

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There is a strong demand to increase the routing density of the RDL to match the requirements for future microelectronic systems which are mainly miniaturization and performance. Photo-resists for structuring the metallization or acting as a mold for electroplating are common for very fine lines and spaces due to the developments in the front-end processing. For example chemical amplified Photo-resists are now moving in the back-end and wafer level packaging process. The results are mainly governed by the performance of the equipment i.e. the photo-tool. This is different for the permanent die

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9

Du, Xiu Yun, and Zhe Nan Tang. "Thermal Analysis of a Face-to-Back Bonded Four-Layer Stacked 3D IC Model." Key Engineering Materials 562-565 (July 2013): 141–46. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.141.

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Three dimensional integrated circuits (3D ICs) consisted of stacking and vertically interconnecting are an emerging technology with great potential for improving system performance. 3D integration relies on Through Silicon Via (TSV) interconnection and interlayer bonding between the silicon layers. Due to the advantages of higher device density, lesser signal delay, shorter interconnection length and smaller package size, this technology attracts growing attentions. A number of innovative processes contribute to the realization of 3D IC. These include back grinding, coating, cleaning, etching,

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10

Gernhardt, Robert, Friedrich Müller, Markus Woehrmann та ін. "Ultra-fine Line Multi-Redistribution Layers with 10 μm Pitch Micro-Vias for Wafer Level and Panel Level Packaging realized by an innovative Excimer Laser Dual Damascene Process". International Symposium on Microelectronics 2017, № 1 (2017): 000120–25. http://dx.doi.org/10.4071/isom-2017-tp45_130.

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Abstract Multi-chip integrated Fan-Out packages and high I/O CSPs demands for higher routing density on wafer level. Due to that, the classical mask aligner lithography and photosensitive thin-film polymers used for BEOL reach its limits and new technologies and materials are necessary to generate lines and space down to two μm. These multi-metal layers set also higher demands on the mechanical properties of the materials. This paper presents a new excimer laser dual damascene process for ultra-fine routing for BEOL. Various materials like low cure temperature polyimide, BCB and 15-μm thick dr

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11

Liu, Wenqi, Shuai Hou, Jiao Yan, Hui Zhang, Yinglu Ji, and Xiaochun Wu. "Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu2+/bicinchoninic acid pair with improved sensitivity." Nanoscale 8, no. 2 (2016): 780–84. http://dx.doi.org/10.1039/c5nr07924a.

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We present an SPR detection method to quantify proteins by building up the relationship between the LSPR peak shift of Au@Ag nanorods and the protein amount via Cu<sup>2+</sup>/BCA pair bridged protein oxidation and Au@Ag etching.

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12

Kirdponpattara, Suchata, Bi-Min Zhang Newby, and Muenduen K. M. Phisalaphong. "Effect of Oxygen Plasma Treatment on Bacterial Cellulose-Alginate Composite Sponge as a Yeast Cell Carrier for Ethanol Fermentation." Advanced Materials Research 724-725 (August 2013): 1150–53. http://dx.doi.org/10.4028/www.scientific.net/amr.724-725.1150.

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A bacterial cellulose-alginate composite sponge (BCA) was developed for use as a cell carrier in ethanol fermentation. Its hydrophilicity was improved by oxygen plasma treatment. Due to the etching effect in plasma application, the external surface roughness of treated BCA was increased, resulting in a decrease of advancing water contact angle. However, oxygen plasma treatment might not be able to create sufficient hydrophilic functional groups on the internal pore surface of BCA, where the yeast cells would be immobilized during fermentation. As a result, under batch fermentation, no signific

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13

Imbery, TA, T. Gray, F. DeLatour, C. Boxx, AM Best, and PC Moon. "Evaluation of Flexural, Diametral Tensile, and Shear Bond Strength of Composite Repairs." Operative Dentistry 39, no. 6 (2014): E250—E260. http://dx.doi.org/10.2341/13-299-l.

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SUMMARY Objective Repairing composite restorations may be a more conservative treatment than replacing the entire restoration. The objective of this in vitro study was to determine the best repair method by measuring flexural, diametral tensile, and shear bond strength of repaired composites in which the surfaces were treated with chemical primers (Add & Bond or Silane Bond Enhancer), a bonding agent (Optibond Solo Plus [OBSP]), or mechanical retention with a bonding agent. Methods Filtek Supreme Ultra shade B1B was placed in special molds to fabricate specimens that served to test the fle

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14

Şimşek, Hayrunnisa, A. Rüya Yazıcı, and H. Cem Güngör. "In Vitro Evaluation of Different Protocols for Preventing Microleakage of Fissure Sealants Placed Following Saliva Contamination." Journal of Clinical Pediatric Dentistry 44, no. 4 (2020): 240–48. http://dx.doi.org/10.17796/1053-4625-44.4.5.

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Purpose: To evaluate the effect of different enamel conditioning protocols and their re-application on the microleakage of fissure sealants placed following saliva contamination. Study design: The study included 156 human third molars in 16 subgroups (2×4×2) under two main groups (sealant type): Group A- hydrophobic resin sealant, 3M Clinpro™ Sealant; Group B- hydrophilic resin sealant, Ultraseal XT Hydro. Each group was then divided according to the type of surface conditioning; 1- Er,Cr:YSSG laser etching, 2- acid-etching, 3- acid-etching+etch-and-rinse adhesive (Prime&Bond® One Select)

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15

"BCB Deep Via Etching Process on ICP Etching System." ECS Meeting Abstracts, 2005. http://dx.doi.org/10.1149/ma2005-01/13/594.

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16

Baklanov, M. R., S. Vanhaelemeersch, C. Alaerts, and K. Maex. "Plasma etching of organic low-dielectric-constant polymers: comparative analysis." MRS Proceedings 511 (1998). http://dx.doi.org/10.1557/proc-511-247.

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ABSTRACTThe etch characteristics of the low-k dielectrics DVS BCB (BCB hereafter) and SILK in oxygen/fluorine plasmas are studied. In an O2/NF3 plasma afterglow, the etch rate of both polymers first increase linearly with increasing NF3 concentration, then decreases monotonously. A fluorine plasma afterglow does not etch either BCB nor SILK but strongly changes their chemical and optical properties. Reactive ion etching (RIE) of the polymers shows a different behaviour. The etch rate of SILK in a pure oxygen plasma is maximal, but BCB is etched slowly. The fluorine additives increase the etch

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17

Berry, M. J., I. Turlik, P. L. Smith, and G. M. Adema. "The Role Of Surface Modification On Adhesion At The Metal/Polymer Interface." MRS Proceedings 227 (1991). http://dx.doi.org/10.1557/proc-227-351.

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ABSTRACTThis paper presents studies of surface modifications of benzocyclobutene (BCB) using reactive ion etching (RIE), ion implantation, and combinations of those in conjunction with liftoff processing steps. It was found that O2/N2 RIE treatments of the BCB surface improve the adhesion of subsequently evaporated chromium and copper. Implant treatments with C+, O+, Si+, As+, and Sb+, were also investigated. The implant treated samples exhibited improved adhesion prior to subsequent heat treatments in the Cr/BCB structures and some improvement subsequent to heat treating in the Cu/BCB structu

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18

Paik, Kyung W., Richard J. Saia, and John J. Chera. "Studies on the Surface Modification of Benzocyclobutene(BCB) Film By Plasma Ions." MRS Proceedings 203 (1990). http://dx.doi.org/10.1557/proc-203-303.

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ABSTRACTThe etch rates of BCB film in a reactive ion etcher(RIE) were measured using Ar, O2, O2+CF4, and O2+SF6 gas mixtures. Faster etch rates were obtained when CF4 and SF6 were added to oxygen, since the presence of atomic fluorine enhances the etch rate of organics, while also etching Si and SiO2 formed by exposure to oxygen gas. Surface compositional changes on the BCB film were observed by XPS after plasma modification. Pure O2 and O2+CF4 plasma oxidized the carbo-siloxane linkage (C-Si-O) of the BCB, resulting in the formation of SiO2 on the surface. The O2 +SF6 plasma, however, did not

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19

Ibrahim, Mohd Haniff, Norazan Mohd Kassim, Abu Bakar Mohammad, Mee–Koy Chin, and Shuh–Ying Lee. "Optical Waveguides In BenzoCyclobutene (BCB 4024–40) Polymer." Jurnal Teknologi, January 20, 2012. http://dx.doi.org/10.11113/jt.v53.105.

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Proses fabrikasi dan pencirian bagi pandu gelombang optik mod tunggal yang berdasarkan bahan polimer sensitif cahaya, BenzoCyclobutene (BCB 4024–40) dibincangkan. Ketebalan filem polimer bagi pelbagai kelajuan putaran enapan dan indeks biasan polimer diukur menggunakan kaedah prisma gandingan. Pandu gelombang ini difabrikasi menggunakan kaedah fotolitografi dan punaran kimia basah di atas bahan kaca BK7 dan lapisan nipis SiO2 sebagai pelindung. Kehilangan pandu gelombang diukur menggunakan kaedah konvensional ‘cut back’ yang menghasilkan purata kehilangan sebanyak 3.5 dB/cm. Kata kunci: Polime

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20

Pantelidis, Dimitrios, Hoo-Jeong Lee, and John C. Bravman. "Effect of Microstructure and Chemical Bonding on the Adhesion Strength of a Silicon/Polymer Interface for Microelectronic Packaging Applications." MRS Proceedings 535 (1998). http://dx.doi.org/10.1557/proc-535-165.

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AbstractInterface reinforcement brought about by addition of a γ-amino-propyl-triethoxy-silane (γ-APS) adhesion promoter layer between a silicon wafer and a spun-on benzocyclobutene polymer (BCB) is investigated. Combining cross-sectional TEM and XPS, crack growth is shown to occur along the γ-APS/BCB interface. Ion etching and in-situ XPS are further employed to study chain orientation and chemical bonding variations through the silane layer. A tendency of the amide group to orient away from the wafer is documented and Si-O-Si siloxane bonding at the γ- APS/SiO2 interface is hypothesized as a

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21

Tacito, R., and C. Steinbrüchel. "Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects." MRS Proceedings 427 (1996). http://dx.doi.org/10.1557/proc-427-449.

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AbstractParylene-n (pa-n) and benzocyclobutene (BCB) are novel candidate materials for interlevel dielectrics in future multilevel interconnects, due to their dielectric constant being much lower than that of silicon dioxide. We describe the fine line patterning of these materials by reactive ion etching in O2/CF4 plasmas. Examples of high aspect ratio trenches and dual damascene structures are presented involving processes with single and double hardmasks.

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22

Katsnelson, Alex, Vadim Tokranov, Michael Yakimov, Matthew Lamberti, and Serge Oktyabrsky. "Hybrid Integration of III-V Optoelectronic Devices on Si Platform Using BCB." MRS Proceedings 741 (2002). http://dx.doi.org/10.1557/proc-741-j5.15.

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ABSTRACTIntegration of dense arrays of high frequency III-V photoemitters and photodetectors with Si platform is one of the challenging tasks for realization of novel chip-level optical interconnects. These interconnects require the resolution of numerous problems of compatibility of materials. Comparison of monolithic and hybrid integration technologies highlights the advantages of hybrid approaches for emitters highly sensitive to growth defects. A novel protocol for fabrication of III-V optoelectronic components on a Si platform is proposed. Reversed vertical cavity surface emitting laser (

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23

Katsnelson, Alex, Vadim Tokranov, Michael Yakimov, and Serge Oktyabrsky. "Integration of III-V Optoelectronic Components on Si Platform." MRS Proceedings 783 (2003). http://dx.doi.org/10.1557/proc-783-b7.4.

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ABSTRACTA method for hybrid integration of III-V optoelectronic components on Si substrate using BCB was demonstrated. The method included bonding, selective wet etching of the GaAs substrate, components separation by wet etching, two-level metallization and lateral oxidation to form optical apertures. Simulations of thermal behavior and mechanical stresses of this integration scheme were performed using finite element analysis, which revealed adequate heat dissipation. Simulations show that this bonding protocol allows reduction of overheating and mechanical stress that enhances the optoelect

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24

Fang, M., T. O'Keefe, M. Stroder, et al. "Maskless, Direct Deposition of Copper onto Aluminum Bond Pads for Flip Chip Applications." MRS Proceedings 515 (1998). http://dx.doi.org/10.1557/proc-515-85.

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ABSTRACTFlip chip interconnection of integrated circuits (IC) for packaging applications such as direct chip attachment use Pb-Sn solders as the connection between the die and the substrate. Underbump metallization is typically used to transition from the non-solderable Al bond pad on the IC to a solderable surface such as copper using traditional blanket metal deposition, photolithography and etching procedures. In this study, we report for the first time the use of a novel process for selectively depositing adherent copper directly onto aluminum thin films, eliminating the need for adhesion

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