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Journal articles on the topic 'Bi2Se3'

Author: Grafiati
Published: 4 June 2021
Last updated: 17 June 2025

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1

Schmidt, P., and H. Oppermann. "Zur Chemie von Mischphasen in komplexen Zustandsdiagrammen Das System Bi2O3/Bi2Se3/Bi2Te3/Chemistry of Mixed Crystals in Complex Phase Diagrams The System Bi2O3/Bi2Se3/Bi2Te3." Zeitschrift für Naturforschung B 55, no. 7 (2000): 627–37. http://dx.doi.org/10.1515/znb-2000-0710.

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Abstract Pseudoternary System Bi2O3/Bi2Se3/Bi2Te3, Phase Diagram, Thermodynamic Data The phase diagram of the pseudoternary system Bi2O3/Bi2Se3/Bi2Te3 is found to include a quaternary solid solution Bi2O2 (TexSe1-x) and ternary, intermetallic mixed crystals Bi2(TexSe1-x)3. Using thermodynamic modeling of the solid solutions it is possible to calcu­ late complex heterogeneous equilibria between all phases of this phase diagram. As a result we can thermodynamically describe the observed phase relations:Bi2(TexSe1-x)3 ⊿H°m(298) = 0; ⊿S°m(298) = R[xlnx + (1-x)ln(1-x)]Bi2O2(TexSe1-x) ⊿H°m(298) = Ω · x(1-x); O⊿S°m(298) = R/4 [xlnx + (1-x)ln(1-x)]Ω = 0,6 kcal/mol
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2

Hwang, Yeong-Maw, Cheng-Tang Pan, Bo-Syun Chen, et al. "Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition." Coatings 10, no. 10 (2020): 958. http://dx.doi.org/10.3390/coatings10100958.

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In the present study, the structural, morphological, compositional, nanomechanical, and surface wetting properties of Bi2Se3 thin films prepared using a stoichiometric Bi2Se3 target and a Se-rich Bi2Se5 target are investigated. The Bi2Se3 films were grown on InP(111) substrates by using pulsed laser deposition. X-ray diffraction results revealed that all the as-grown thin films exhibited were highly c-axis-oriented Bi2Se3 phase with slight shift in diffraction angles, presumably due to slight stoichiometry changes. The energy dispersive X-ray spectroscopy analyses indicated that the Se-rich target gives rise to a nearly stoichiometric Bi2Se3 films, while the stoichiometric target only resulted in Se-deficient and Bi-rich films. Atomic force microscopy images showed that the films’ surfaces mainly consist of triangular pyramids with step-and-terrace structures with average roughness, Ra, being ~2.41 nm and ~1.65 nm for films grown with Bi2Se3 and Bi2Se5 targets, respectively. The hardness (Young’s modulus) of the Bi2Se3 thin films grown from the Bi2Se3 and Bi2Se5 targets were 5.4 GPa (110.2 GPa) and 10.3 GPa (186.5 GPa), respectively. The contact angle measurements of water droplets gave the results that the contact angle (surface energy) of the Bi2Se3 films obtained from the Bi2Se3 and Bi2Se5 targets were 80° (21.4 mJ/m2) and 110° (11.9 mJ/m2), respectively.
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3

Jiang, Jun, Ya Li Li, Gao Jie Xu, Ping Cui, and Li Dong Chen. "Thermoelectric Properties of n-type (Bi2Se3)x(Bi2Te3)1-x Crystals Prepared by Zone Melting." Key Engineering Materials 368-372 (February 2008): 547–49. http://dx.doi.org/10.4028/www.scientific.net/kem.368-372.547.

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In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.
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4

Kadhim, Arej, Arshad Hmood, and Abu Hassan Haslan. "Significant Influences of Selenium on the Electrical Properties of Bi2Te3 Compounds Synthesized Using Solid-State Microwave Irradiation." Advanced Materials Research 501 (April 2012): 126–28. http://dx.doi.org/10.4028/www.scientific.net/amr.501.126.

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The thermoelectric materials based on p-type Bi2Se3xTe3 (1-x) bulk products and dispersed with x compositions of Se (x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0) were fabricated using standard solid-state microwave synthesis procedures. The products were characterized by X-ray diffraction (XRD). The XRD characterizations revealed that these products are pure Bi2Te3 and Bi2Se3 with uniform structures. The electrical properties of the Bi2Te3, Bi2Se3 and Bi2Se3xTe3 (1-x) samples were measured in the temperature range of 303–523 K. The highest value of the Seebeck coefficient was 176.3 μV/ K for the Bi2Se0.6Te2.4 sample, but only 149.5 and 87.4 μV/K for the Bi2Te3 and Bi2Se3 samples, respectively.
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5

Hong, Soon Jik, K. S. Hwang, Jai Won Byeon, Min Ku Lee, Chang Kyu Rhee, and Byong Sun Chun. "The Effect of Powder Size on Thermoelectric Properties of 95%Bi2Te3-5%Bi2Se3 Alloy." Solid State Phenomena 119 (January 2007): 271–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.119.271.

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The n-type (95%Bi2Te3- 5%Bi2Se3) compound was newly fabricated by gas atomization and hot extrusion, which is considered to be a mass production technique of this alloy. The effect of powder size on thermoelectric properties of 0.04% SbI3 doped 95%Bi2Te3- 5%Bi2Se3 alloy were investigated. Seebeck coefficient (α) and Electrical resistivity (ρ) increased with increasing powder size due to the decrease in carrier concentration by oxygen content. With increasing powder size, the compressive strength of 95%Bi2Te3-5%Bi2Se3 alloy was increased due to the relative high density. The compound with ~300 μm size shows the highest power factor among the four different powder sizes. The rapidly solidified and hot extruded compound using 200~300 μm powder size shows the highest compressive strength.
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6

Bouanani, H. Ghoumari, D. Eddike, B. Liautard, and G. Brun. "Solid state demixing in Bi2Se3-Bi2Te3 and Bi2Se3-In2Se3 phase diagrams." Materials Research Bulletin 31, no. 2 (1996): 177–87. http://dx.doi.org/10.1016/0025-5408(95)00185-9.

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7

Han, Juncheng, Menghan Pang, Donghuan Meng, Jianrong Qiu, and Dongbo Wang. "Construction of Bouquet-Like Bi2Se3/Bi2O3@Bi Composites with High Interfacial Charge Separation for the Degradation of Atrazine." Materials 16, no. 5 (2023): 1896. http://dx.doi.org/10.3390/ma16051896.

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Using low-density solar energy in the environment and converting it into chemical energy that can drive the degradation of organic pollutants is considered to be a very promising strategy for solving the problem of environmental pollution. The efficacy of photocatalytic destruction of organic contaminants is nonetheless constrained by the high composite rate of photogenic carriers, insufficient light absorption and utilization impact, and sluggish charge transfer rate. In this work, we created a new type of heterojunction photocatalyst with a spherical Bi2Se3/Bi2O3@Bi core–shell structure and investigated its degrading properties of organic pollutants in the environment. Interestingly, benefiting from the fast electron transfer capability of the Bi0 electron bridge, the charge separation and transfer efficiency between Bi2Se3 and Bi2O3 is greatly improved. In this photocatalyst, Bi2Se3 not only has a photothermal effect to speed up the process of photocatalytic reaction, but also has fast electrical conductivity of topological materials at the surface, which speeds up the transmission efficiency of photogenic carriers. As expected, the removal performance of the Bi2Se3/Bi2O3@Bi photocatalyst to atrazine is 4.2 and 5.7 times higher than that of the original Bi2Se3 and Bi2O3. Meanwhile, the best samples Bi2Se3/Bi2O3@Bi showed 98.7%, 97.8%, 69.4%, 90.6%, 91.2%, 77.2%, 97.7%, and 98.9% removal of ATZ, 2,4-DCP, SMZ, KP, CIP, CBZ, OTC-HCl, and RhB, and 56.8%, 59.1%, 34.6%, 34.5%, 37.1%, 73.9%, and 78.4% mineralization. Through characterization such as XPS and electrochemical workstations, it is proved that the photocatalytic properties of Bi2Se3/Bi2O3@Bi catalysts are far superior to other materials, and a suitable photocatalytic mechanism is proposed. A novel form of bismuth-based compound photocatalyst is anticipated to be produced as a result of this research in order to address the increasingly critical problem of environmental water pollution in addition to presenting fresh avenues for the creation of adaptable nanomaterials for additional environmental applications.
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8

Tang, Xinyu, Min Liu, Jian Yang, et al. "Enhanced Near-Room-Temperature Thermoelectric Properties of Bi2Se3 Bulks Through AgCuSe Alloying." Journal of Nanoelectronics and Optoelectronics 20, no. 1 (2025): 92–100. https://doi.org/10.1166/jno.2025.3702.

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Bi2Se3 alloy is a cost-effective, abundant, and promising thermoelectric material, serving as an alternative to Bi2Te3. However, its near-room-temperature performance is poor due to its inferior electrical properties. In this work, the interstitial Ag and Cu atoms were introduced to Bi2Se3, which can enable them to occupy the van der Waals (vdW) gaps of Bi2Se3 and generate free electrons, thus enhancing carrier mobility and electrical conductivity. Remarkably, the power factor (PF) saw a dramatic 105% surge, jumping from 3.6 μW cm−1 K−2 in pristine Bi2Se3 to 7.4 μW cm−1 K−2 in the AgCuSe alloyed Bi2Se3. The inclusion of Ag and Cu within the vdW gaps induced notable lattice distortions, which, coupled with high density of dislocations, effectively scattered phonons. This phenomenon resulted in a substantial reduction of the lattice thermal conductivity (κlat) to just 0.3 W m−1 K−1. Consequently, the x = 0.20 wt% AgCuSe achieved an impressive near-room-temperature ZT value of 0.25, peaking at 0.32 when heated to 423 K. This suggests that the appropriate doping of phonon-liquid electron-crystal materials into Bi2Se3can significantly enhance thermoelectric performance.
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9

Li, Mengyao, Yu Zhang, Ting Zhang, et al. "Enhanced Thermoelectric Performance of n-Type Bi2Se3 Nanosheets through Sn Doping." Nanomaterials 11, no. 7 (2021): 1827. http://dx.doi.org/10.3390/nano11071827.

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The cost-effective conversion of low-grade heat into electricity using thermoelectric devices requires developing alternative materials and material processing technologies able to reduce the currently high device manufacturing costs. In this direction, thermoelectric materials that do not rely on rare or toxic elements such as tellurium or lead need to be produced using high-throughput technologies not involving high temperatures and long processes. Bi2Se3 is an obvious possible Te-free alternative to Bi2Te3 for ambient temperature thermoelectric applications, but its performance is still low for practical applications, and additional efforts toward finding proper dopants are required. Here, we report a scalable method to produce Bi2Se3 nanosheets at low synthesis temperatures. We studied the influence of different dopants on the thermoelectric properties of this material. Among the elements tested, we demonstrated that Sn doping resulted in the best performance. Sn incorporation resulted in a significant improvement to the Bi2Se3 Seebeck coefficient and a reduction in the thermal conductivity in the direction of the hot-press axis, resulting in an overall 60% improvement in the thermoelectric figure of merit of Bi2Se3.
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10

Lazarenko, Vitalijs, Yelyzaveta Rublova, Raimonds Meija, et al. "Bi2Se3 Nanostructured Thin films as Perspective Anodes for Aqueous Rechargeable Lithium-Ion Batteries." Batteries 8, no. 10 (2022): 144. http://dx.doi.org/10.3390/batteries8100144.

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In recent years, aqueous rechargeable lithium-ion batteries (ARLIBs) have attracted attention as an alternative technology for electrical storage. One of the perspective battery anode materials for application in ARLIBs is Bi2Se3, which has already shown good perspectives in the application of conventional lithium-ion batteries (LIBs) that use organic electrolytes. In this study, the electrochemical properties of Bi2Se3 thin films with two different layers on the electrode surface—the solid electrolyte interphase (SEI) and the Bi2O3 layer—were investigated. The results of this work show that the formation of the SEI layer on the surface of Bi2Se3 thin films ensures high diffusivity of Li+, high electrochemical stability, and high capacity up to 100 cycles, demonstrating the perspectives of Bi2Se3 as anode material for ARLIBs.
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11

Гасанова, Гюнель Самир, Айтен Исмет Агазаде, Юсиф Амиралы Юсибов та Магомед Баба Бабанлы. "Термодинамическое исследование системы Bi2Se3–Bi2Te3 методом ЭДС". Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 22, № 3 (2020): 310–19. http://dx.doi.org/10.17308/kcmf.2020.22/2961.

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Бинарные и сложные халькогениды с тетрадимитоподобной слоистой структурой представляют большой практический интерес как топологические изоляторы, термоэлектрические и оптоэлектронные материалы. Их фундаментальные термодинамические функции в совокупности с фазовыми диаграммами важны для разработки и оптимизации методов синтеза и выращивания кристаллов. В работе представлены результаты термодинамического исследования исходных соединений и твердых растворов системы Bi2Se3-Bi2Te3 методом электродвижущих сил (ЭДС). Различные модификации этого метода широко применяются для исследования бинарных и сложных халькогенидов металлов. Исследования проводили измерением ЭДС концентрационных цепей типа:(–) Bi (тв.) | ионная жидкость + Bi3+ | Bi в сплаве (тв.) (+) в интервале температур 300-450 K.В качестве правых электродов были использованы предварительно синтезированные равновесные сплавы Bi2Se3–хTex (х = 0; 0.6; 1.2; 1.8; 2.0; 2.4; 3.0) с 0.5 ат. % избытком теллура. В качестве электролита использовали ионную жидкость (формиат морфолина) с добавлением BiCl3.Полученные экспериментальные данные обработаны с помощью компьютерной программы «Microsoft Office Excel 2003» методом наименьших квадратов и получены линейные уравнения типа E = a + bT. Из полученных уравнений температурных зависимостей ЭДС рассчитаны относительные парциальные молярные функции висмута в сплавах. На основании диаграммы твердофазных равновесий системы Bi–Se–Te были определены уравнения потенциалобразующих реакций, с использованием которых вычислены стандартные термодинамические функцииобразования и стандартные энтропии соединений Bi2Se3, Bi2Te3 и твердых растворов Bi2Se3–xTex вышеуказанных составов. Также вычислены термодинамические функции образования твердых растворов Bi2Se3–xTex из исходных бинарных соединений. Полученные результаты хорошо коррелируют со структурными данными о том, что в кристаллической решетке b-фазы состава Bi2SeTe2 в расположении атомов селена и теллура наблюдается некоторая упорядоченность – атомы селена преимущественно занимают центральный слой пятислойника, а атомы теллура – два внешних слоя.
 
 
 
 
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DOI: https://doi.org/10.1016/j.jallcom.2014.05.01531. Jafarov Y. I., Ismaylova S. A., Aliev Z. S., ImamaliyevaS. Z., Yusibov Y. A., Babanly M. B. Experimentalstudy of the phase diagram and thermodynamicproperties of the Tl-Sb-S system. Calphad. 2016;55:231–237. DOI: https://doi.org/10.1016/j.calphad.2016.09.00732. Imamaliyeva S. Z., Babanly D. M., Gasanly T. M.,Tagiev D. B., Babanly M. B. Thermodynamic propertiesof Tl9GdTe6 and TlGdTe2. Russian Journal of PhysicalChemistry A. 2018;92(11): 2111–2117. DOI: https://doi.org/10.1134/s003602441811015833. Moroz M. V., Prokhorenko M. V., ProkhorenkoS. V., Yatskov M. V., Reshetnyak O. V. Thermodynamicproperties of AgIn2Te3I and AgIn2Te3Br, determinedby the EMF method. Russian Journal of PhysicalChemistry A. 2018;92(1): 19–23. DOI: https://doi.org/10.1134/s003602441801016834. Козин Л.Ф., Нигметова Р. Ш. Термодинами-ческие свойства жидких сплавов олово–ртуть. Ж.Неорган. химии, 1963;8(11): 2556-2562.35. Aliev Z. S., Musayeva S. S. Imamaliyeva S. Z.,Babanlэ M. B. Thermodynamic study of antimonychalcoiodides by EMF method with an ionic liquid. J.Therm. Anal. Calorim. 2018;133(2): 1115–1120. DOI:https://doi.org/10.1007/s10973-017-6812-436. Imamaliyeva S. Z., Musayeva S. S., BabanlyD. M., Jafarov Y. I., Tagiyev D. B., Babanly M. B.Determination of the thermodynamic functions ofbismuth chalcoiodides by EMF method with morpholiniumformate as electrolyte. Thermochimica Acta.2019;679: 178319. DOI: https://doi.org/10.1016/j.tca.2019.17831937. Brigouleix C., Anouti M., Jacquemin J., Caillon-Caravanier M., Galiano H., Lemordant D. Physicochemicalcharacterization of morpholinium cationbased protic ionic liquids used as electrolytes. J. Phys.Chem. B. 2010;114(5): 1757–1766. DOI: https://doi.org/10.1021/jp906917v38. Абрикосов Н. Х., Банкина В. Ф., Порец-кая Л. В. и др. Полупроводниковые халькогениды исплавы на их основе. М.: Наука; 1975. 220 с.39. Chizhevskaya S. N. Shelimova L. E. Se–Te phasediagram and structures of amorphous and crystallineSe1–xTex alloys: critical review. Russ. J. Inorg. Chem.1997;42(5): 827–837.40. Ghosh G., Lukas H. L., Delaey L. A thermodynamicassessment of the Se–Te system. Calphad.1988; 12(3):295–299. DOI: https://doi.org/10.1016/0364-5916(88)90010-741. Васильев В. П., Сомов А. П., Никольская А. В.,Герасимов Я. И. Исследование термодинамическихсвойства селенида висмута методом ЭДС. Ж. Физ.химии. 1968; 42(3): 675–678.42. Мелех Б. Т., Семенкович С. А. Термодина-мические свойства теллурида и селенида трехва-лентного висмута. Изв. АН СССР. Неорган. матер.1968;4(8): 1346–1348.43. Герасимов Я. И. и Никольская А. В. Термо-динамические свойства теллурида висмута (Bi2Te3)и теллурида сурьмы (Sb2Te3). В кн.: Металлургия ифизика полупроводников. М.: 1961. с. 30–33.
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12

Nghi, Nguyen Thanh, A. L. Ushkans, and T. A. Cherepanova. "Gaseous Bubble Formation in Bi2Te3Bi2Se3 Melt." Crystal Research and Technology 21, no. 3 (1986): 367–74. http://dx.doi.org/10.1002/crat.2170210309.

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13

da Silva, Estelina Lora, Mario C. Santos, Plácida Rodríguez-Hernández, Alfonso Muñoz, and Francisco Javier Manjón. "Theoretical Study of Pressure-Induced Phase Transitions in Sb2S3, Bi2S3, and Sb2Se3." Crystals 13, no. 3 (2023): 498. http://dx.doi.org/10.3390/cryst13030498.

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We report an ab initio study of Sb2S3, Sb2Se3, and Bi2S3 sesquichalcogenides at hydrostatic pressures of up to 60 GPa. We explore the possibility that the C2/m, C2/c, the disordered Im-3m, and the I4/mmm phases observed in sesquichalcogenides with heavier cations, viz. Bi2Se3, Bi2Te3, and Sb2Te3, could also be formed in Sb2S3, Sb2Se3, and Bi2S3, as suggested from recent experiments. Our calculations show that the C2/c phase is not energetically favorable in any of the three compounds, up to 60 GPa. The C2/m system is also unfavorable for Sb2S3 and Bi2S3; however, it is energetically favorable with respect to the Pnma phase of Sb2Se3 above 10 GPa. Finally, the I4/mmm and the disordered body-centered cubic-type Im-3m structures are competitive in energy and are energetically more stable than the C2/m phase at pressures beyond 30 GPa. The dynamical stabilities of the Pnma, Im-3m, C2/m, and I4/mmm structural phases at high pressures are discussed for the three compounds.
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Dzhafarov, Ya I., A. M. Mirzoeva, and M. B. Babanly. "Reciprocal system 3Tl2S + Bi2Se3 ↔ 3Tl2Se + Bi2S3." Russian Journal of Inorganic Chemistry 51, no. 5 (2006): 805–9. http://dx.doi.org/10.1134/s0036023606050202.

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15

SHEN, JUNJIE, QIAN SUN, TIEJUN ZHU, and XINBING ZHAO. "SELF-ASSEMBLY OF BISMUTH SELENIDE TWO-DIMENSIONAL SUPERSTRUCTURE FROM HEXAGONAL NANOSHEETS." Functional Materials Letters 04, no. 03 (2011): 245–48. http://dx.doi.org/10.1142/s1793604711001956.

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A kind of novel superstructure array composed of hexagonal Bi2Se3 nanosheets were fabricated via a facile hydrothermal method. The structure was characterized by X-ray diffraction and field emission scanning electron micrioscopy. It is suggested that the two dimensional superstructure was self-assembled by sheet-like Bi2Se3 building blocks on naturally-formed Bi2SeO2 precusor template. The present result indicates one promising way in design and growth of self-assembled superstructures by controllable crystal growth from deoxided substrates with good lattice match.
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Gahramanov, S. Sh, Y. A. Abdullayev, H. V. Orujova, A. A. Badalov, and N. A. Abdullayev. "Low Dissipative State of Bi2Se3 and Bi2Te3 Surfaces." Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques 18, no. 3 (2024): 573–78. http://dx.doi.org/10.1134/s1027451024700125.

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Mntungwa, Nhlakanipho, Pullabhotla V. S. R. Rajasekhar, Karthik Ramasamy, and Neerish Revaprasadu. "A simple route to Bi2Se3 and Bi2Te3 nanocrystals." Superlattices and Microstructures 69 (May 2014): 226–30. http://dx.doi.org/10.1016/j.spmi.2014.02.021.

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18

Yelgel, Övgü Ceyda, and G. P. Srivastava. "Thermoelectric properties of Bi2Se3/Bi2Te3/Bi2Se3and Sb2Te3/Bi2Te3/Sb2Te3quantum well systems." Philosophical Magazine 94, no. 18 (2014): 2072–99. http://dx.doi.org/10.1080/14786435.2014.903340.

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19

Foucaran, A., A. Sackda, A. Giani, F. Pascal-Delannoy, and A. Boyer. "Flash evaporated layers of (Bi2Te3–Bi2Se3)(N) and (Bi2Te3–Sb2Te3)(P)." Materials Science and Engineering: B 52, no. 2-3 (1998): 154–61. http://dx.doi.org/10.1016/s0921-5107(98)00108-1.

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20

Lee, Go-Eun, Il-Ho Kim, Young Soo Lim, Won-Seon Seo, Byeong-Jun Choi, and Chang-Won Hwang. "Preparation and thermoelectric properties of Bi2Te3-Bi2Se3 solid solutions." Journal of the Korean Physical Society 64, no. 10 (2014): 1416–20. http://dx.doi.org/10.3938/jkps.64.1416.

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21

Boulares, Ibrahim, Guangsha Shi, Emmanouil Kioupakis, Petr Lošťák, Ctirad Uher, and Roberto Merlin. "Surface phonons in the topological insulators Bi2Se3 and Bi2Te3." Solid State Communications 271 (March 2018): 1–5. http://dx.doi.org/10.1016/j.ssc.2017.12.012.

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22

Ivanova, L. D., L. I. Petrova, Yu V. Granatkina, et al. "Extruded thermoelectric materials based on Bi2Te3-Bi2Se3 solid solutions." Inorganic Materials 45, no. 2 (2009): 123–28. http://dx.doi.org/10.1134/s0020168509020034.

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Feng, Zunpeng, Yanan Hao, Jiameng Zhang, Jing Qin, Limin Guo, and Ke Bi. "Dielectric Properties of Two-Dimensional Bi2Se3 Hexagonal Nanoplates Modified PVDF Nanocomposites." Advances in Polymer Technology 2019 (July 3, 2019): 1–8. http://dx.doi.org/10.1155/2019/8720678.

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Topological insulator two-dimensional (2D) Bi2Se3 hexagonal nanoplates, which are highly insulating in the bulk and have a conductive topological surface state, have been prepared via an “EG- (ethylene glycol-) sol” method and characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), and scanning electron microscopy (SEM). Bi2Se3/PVDF (polyvinylidene fluoride) nanocomposites with various Bi2Se3 contents have been fabricated by a tape-casting method. The microstructure and dielectric performance of the Bi2Se3/PVDF nanocomposites are studied. The dielectric constant of the dense nanocomposite films keeps a relatively low value of about 16 when the Bi2Se3 content is lower than 12 vol.% then suddenly increases to 36 with a critical Bi2Se3 content of 13 vol.% due to the percolation effect of the large aspect ratio of the 2D Bi2Se3 nanoplates. The study of the Bi2Se3/PVDF nanocomposite system is conducive to the exploration of high-performance dielectrics.
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24

Zhang, J., K. Zhao, X. S. Yang, and Y. Zhao. "Preparation and magnetic properties for FeSex/Bi2Se3 bilayer films on silicon substrates by RF magnetron sputtering." Functional Materials Letters 12, no. 02 (2019): 1950018. http://dx.doi.org/10.1142/s1793604719500188.

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FeSex/Bi2Se3 bilayer thin films were grown by RF magnetron sputtering on silicon substrates with different thicknesses of Bi2Se3 and the structural, morphological and magnetic properties were investigated. FeSex/Bi2Se3 bilayer films had Bi2Se3 crystallites oriented with c-axis perpendicular to the film plane, and exhibited weak ferromagnetism at low temperature due to the ferromagnetic FeSe2. The thickness of Bi2Se3 layer affected both crystalline structure of Fe–Se layer and the magnetic property.
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Fan, Kaixuan, Ze Hua, Siyao Gu, et al. "Superconductivity at Pd/Bi2Se3 Interfaces Due to Self-Formed PdBiSe Interlayers." Materials 17, no. 22 (2024): 5460. http://dx.doi.org/10.3390/ma17225460.

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Understanding the physical and chemical processes at the interfaces of metals and topological insulators is crucial for the development of the next generation of topological quantum devices. Here, we report the discovery of robust superconductivity in Pd/Bi2Se3 bilayers fabricated by sputtering Pd on the surface of Bi2Se3. Through transmission electron microscopy measurements, we identify that the observed interfacial superconductivity originates from the diffusion of Pd into Bi2Se3. In the diffusion region, Pd chemically reacts with Bi2Se3 and forms a layer of PdBiSe, a known superconductor with a bulk transition temperature of 1.5 K. Our work provides a method for the introduction of superconductivity into Bi2Se3, laying the foundation for the development of sophisticated Bi2Se3-based topological devices.
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Hu, Linyu, Yuqi Li, Wenbo Chen, et al. "Controlled Synthesis and Photoelectrochemical Performance Enhancement of Cu2−xSe Decorated Porous Au/Bi2Se3 Z-Scheme Plasmonic Photoelectrocatalyst." Catalysts 12, no. 4 (2022): 359. http://dx.doi.org/10.3390/catal12040359.

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In this paper, uniform Cu2−xSe-modified Au/Bi2Se3 hybrid nanoparticles with porous shells have been prepared through a cation exchange method. Bi2Se3/Cu2−xSe Z-scheme heterojunction is introduced onto Au nanocube by replacing Bi3+ with Cu2+. Owing to the effective coupling between Au core and semiconductor shells, Au/Bi2Se3/Cu2−xSe hybrids present a broad and strong plasmon resonance absorption in the visible band. More intriguingly, the carrier lifetime of Au/Bi2Se3/Cu2−xSe hybrid photoelectrodes can be further tailored with corresponding Cu2−xSe content. Through parameter optimization, 0.1-Au/Bi2Se3/Cu2−xSe electrode exhibits the longest electron lifetime (86.03 ms) among all the parallel samples, and corresponding photoelectrochemical performance enhancement is also observed in the tests. Compared with that of pure Bi2Se3 (0.016% at 0.90 V vs. RHE) and Au/Bi2Se3 (0.02% at 0.90 V vs. RHE) nanoparticles, the maximum photoconversion efficiency of porous Au/Bi2Se3/Cu2−xSe hybrid photoanodes increased by 5.87 and 4.50 times under simulated sunlight illumination, attributing to the cooperation of Z-scheme heterojunction and plasmon resonance enhancement effects. All the results indicate that Au/Bi2Se3/Cu2−xSe porous hybrids combine eco-friendliness with excellent sunlight harvesting capability and effectively inhibiting the charge recombination, which provide a new idea for efficient solar-driven water splitting.
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27

Wang, Chih-Chiang, Fuh-Sheng Shieu, and Han C. Shih. "Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process." Nanomaterials 11, no. 5 (2021): 1352. http://dx.doi.org/10.3390/nano11051352.

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Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10−2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi2Se3. FPA–FTIR reveals that the optical bandgap of doped Bi2Se3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi2Se3. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi2Se3 under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10−10 and 0.35 × 10−10 A and high Iphoto/Idark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10−2 and 6.6 × 10−2 s. Under UV light, (In,Sn)-dopedBi2Se3 had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi2Se3, indicating that (In,Sn)-doped Bi2Se3 exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi2Se3 under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi2Se3 has greater potential than undoped Bi2Se3 for use in UV and red-light photodetectors.
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28

Yu, Ting, Rong Luo, Tongbiao Wang, et al. "Enhancement of Casimir Friction between Graphene-Covered Topological Insulator." Nanomaterials 12, no. 7 (2022): 1148. http://dx.doi.org/10.3390/nano12071148.

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Casimir friction is theoretically studied between graphene-covered undoped bismuth selenide (Bi2Se3) in detail. In the graphene/Bi2Se3 composite structure, the coupling of the hyperbolic phonon polaritons supported by Bi2Se3 with the surface plasmons supported by graphene can lead to the hybrid surface plasmon–phonon polaritons (SPPPs). Compared with that between undoped Bi2Se3, Casimir friction can be enhanced by more than one order of magnitude due to the contribution of SPPPs. It is found that the chemical potential that can be used to modulate the optical characteristic of SPPPs plays an important role in Casimir friction. In addition, the Casimir friction between doped Bi2Se3 is also studied. The friction coefficient between doped Bi2Se3 can even be larger than that between graphene-covered undoped Bi2Se3 for suitable chemical potential due to the contribution of unusual electron surface states. The results obtained in this work are not only beneficial to the study of Casimir frictions but also extend the research ranges of topological insulators.
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Kang, Yan, Yinlong Tan, Renyan Zhang, Xiangnan Xie, and Weihong Hua. "In-Situ Chemical Thinning and Surface Doping of Layered Bi2Se3." Nanomaterials 12, no. 21 (2022): 3725. http://dx.doi.org/10.3390/nano12213725.

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As a promising topological insulator, two-dimensional (2D) bismuth selenide (Bi2Se3) attracts extensive research interest. Controllable surface doping of layered Bi2Se3 becomes a crucial issue for the relevant applications. Here, we propose an efficient method for the chemical thinning and surface doping of layered Bi2Se3, forming Se/Bi2Se3 heterostructures with tunable thickness ranging from a few nanometers to hundreds of nanometers. The thickness can be regulated by varying the reaction time and large-size few-layer Bi2Se3 sheets can be obtained. Different from previous liquid-exfoliation methods that require complex reaction process, in-situ and thickness-controllable exfoliation of large-size layered Bi2Se3 can be realized via the developed method. Additionally, the formation of Se nanomeshes coated on the Bi2Se3 sheets remarkably enhance the intensity of Raman vibration peaks, indicating that this method can be used for surface-enhanced Raman scattering. The proposed chemical thinning and surface-doping method is expected to be extended to other bulk-layered materials for high-efficient preparation of 2D heterostructures.
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30

Chen, Jiayi, Guodong Wu, Yamei Ding, et al. "Antioxidative 2D Bismuth Selenide via Halide Passivation for Enhanced Device Stability." Nanomaterials 13, no. 14 (2023): 2056. http://dx.doi.org/10.3390/nano13142056.

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The topological insulator 2D Bi2Se3 is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi2Se3 is prone to oxidation. Surface passivation using ligand agents after Bi2Se3 exfoliation works well to protect the surface, but the process is time-consuming and technically challenging; a passivation agent that is stable under a highly biased potential is significant for in situ passivation of the Bi2Se3 surface. In this work, the roles of halide anions (Cl−, Br−, and I−) in respect of the chemical properties of synthetic Bi2Se3 nanosheets during electrochemical intercalated exfoliation were investigated to determine the antioxidation capacity. It was found that Bi2Se3 nanosheets prepared in a solution of tetrabutylammonium chloride (TBA+ and Cl−) have the best oxidation resistance via the surface bonding of Bi with Cl, which promotes obtaining better device stability. This work paves an avenue for adjusting the components of the electrolyte to further promote the stability of 2D Bi2Se3-nanosheet-based electronic devices.
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31

Andzane, Jana, Krisjanis Buks, Elmars Spalva, Andrei Felsharuk, and Donats Erts. "The Impact of Topological States on the Thermoelectric Performance of p- and n-Type Sb2Te3/Bi2Se3-Multiwalled Carbon Nanotubes Heterostructured Networks." Coatings 13, no. 12 (2023): 2082. http://dx.doi.org/10.3390/coatings13122082.

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The resistance and magnetoresistance of flexible thermoelectric p-type Sb2Te3-MWCNT, p-type Bi2Se3-MWCNT, and n-type Bi2Se3-MWCNT heterostructures were studied in the temperature range from 2 K to 300 K to reveal the conductance mechanisms governing the thermoelectric properties of these heterostructured networks. It was found that the conductance in heterostructured networks at different temperatures is governed by different processes and components of the networks. This effect was found to be related to the growth mechanisms of the Sb2Te3 and Bi2Se3 nanostructures on the MWCNT networks. At near-room temperatures, the Sb2Te3 and Bi2Se3 nanostructures were found to have the dominant contribution to the total conductance of the p-type Sb2Te3-MWCNT and n-type Bi2Se3-MWCNT networks. In turn, the conduction of p-type Bi2Se3-MWCNT heterostructured networks in a full temperature range and p-type Sb2Te3-MWCNT and n-type Bi2Se3-MWCNT heterostructured networks at temperatures below 30 K was governed by the MWCNTs; however, with the contribution from 2D topological states of Sb2Te3 and Bi2Se3 nanostructures, these were manifested by the weak antilocalization effect (WAL) cusps observed at temperatures below 5–10 K for all heterostructured networks considered in this work.
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32

Marchenkov, Vyacheslav V., Alexey V. Lukoyanov, Semyon T. Baidak, et al. "Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals." Micromachines 14, no. 10 (2023): 1888. http://dx.doi.org/10.3390/mi14101888.

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The electrical resistivity and the Hall effect of topological insulator Bi2Te3 and Bi2Se3 single crystals were studied in the temperature range from 4.2 to 300 K and in magnetic fields up to 10 T. Theoretical calculations of the electronic structure of these compounds were carried out in density functional approach, taking into account spin–orbit coupling and crystal structure data for temperatures of 5, 50 and 300 K. A clear correlation was found between the density of electronic states at the Fermi level and the current carrier concentration. In the case of Bi2Te3, the density of states at the Fermi level and the current carrier concentration increase with increasing temperature, from 0.296 states eV−1 cell−1 (5 K) to 0.307 states eV−1 cell−1 (300 K) and from 0.9 × 1019 cm−3 (5 K) to 2.6 × 1019 cm−3 (300 K), respectively. On the contrary, in the case of Bi2Se3, the density of states decreases with increasing temperature, from 0.201 states eV−1 cell−1 (5 K) to 0.198 states eV−1 cell−1 (300 K), and, as a consequence, the charge carrier concentration also decreases from 2.94 × 1019 cm−3 (5 K) to 2.81 × 1019 cm−3 (300 K).
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33

Ahmad, Faizan. "Transient Reflection Spectra In Topological Nanocrystals Of Bi2Se3, Bi2Te3, Bi2Te2Se." Advanced Materials Letters 8, no. 4 (2017): 423–27. http://dx.doi.org/10.5185/amlett.2017.6898.

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Abdullayev, N. M., S. I. Mekhtiyeva, N. R. Memmedov, M. A. Ramazanov, and A. M. Kerimova. "Effect of annealing on the structure of Bi2Te3-Bi2Se3 films." Semiconductors 44, no. 6 (2010): 824–27. http://dx.doi.org/10.1134/s1063782610060230.

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Hailouf, Houssam Eddine, K. O. Obodo, Hafid Aourag, et al. "Deciphering dimensional transition effects in Bi2Se3 and Bi2Te3 topological insulators." Materials Science in Semiconductor Processing 186 (February 2025): 109019. http://dx.doi.org/10.1016/j.mssp.2024.109019.

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Ambrosi, Adriano, Zdeněk Sofer, Jan Luxa, and Martin Pumera. "Exfoliation of Layered Topological Insulators Bi2Se3 and Bi2Te3 via Electrochemistry." ACS Nano 10, no. 12 (2016): 11442–48. http://dx.doi.org/10.1021/acsnano.6b07096.

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37

Dumas, J. F., G. Brun, B. Liautard, J. C. Tedenac, and M. Maurin. "New contribution in the study of the Bi2Te3-Bi2Se3 system." Thermochimica Acta 122, no. 1 (1987): 135–41. http://dx.doi.org/10.1016/0040-6031(87)80113-2.

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38

Lee, Go-Eun, Il-Ho Kim, Young Soo Lim, Won-Seon Seo, Byeong-Jun Choi, and Chang-Won Hwang. "Preparation and Thermoelectric Properties of Doped Bi2Te3-Bi2Se3 Solid Solutions." Journal of Electronic Materials 43, no. 6 (2013): 1650–55. http://dx.doi.org/10.1007/s11664-013-2822-6.

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39

Seixas, L., L. B. Abdalla, T. M. Schmidt, A. Fazzio, and R. H. Miwa. "Topological states ruled by stacking faults in Bi2Se3 and Bi2Te3." Journal of Applied Physics 113, no. 2 (2013): 023705. http://dx.doi.org/10.1063/1.4773325.

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40

Lošták, P., J. Horák, R. Novotný, and J. Klikorka. "Monocrystalline structure of Bi2Te3-Bi2Se3 with a p-n junction." Journal of Materials Science Letters 6, no. 12 (1987): 1469–70. http://dx.doi.org/10.1007/bf01689325.

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41

Manjón, F. J., R. Vilaplana, O. Gomis, et al. "High-pressure studies of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3." physica status solidi (b) 250, no. 4 (2013): 669–76. http://dx.doi.org/10.1002/pssb.201200672.

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42

Wang, Chih-Chiang, Pao-Tai Lin, Fuh-Sheng Shieu, and Han-Chang Shih. "Enhanced Photocurrent of the Ag Interfaced Topological Insulator Bi2Se3 under UV- and Visible-Light Radiations." Nanomaterials 11, no. 12 (2021): 3353. http://dx.doi.org/10.3390/nano11123353.

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Bi2Se3 is a topological quantum material that is used in photodetectors, owing to its narrow bandgap, conductive surface, and insulating bulk. In this work, Ag@Bi2Se3 nanoplatelets were synthesized on Al2O3(100) substrates in a two-step process of thermal evaporation and magnetron sputtering. X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) revealed that all samples had the typical rhombohedral Bi2Se3. Field-emission scanning electron microscopy (FESEM)-energy dispersive x-ray spectroscopy (EDS), XPS, and HRTEM confirmed the presence of the precipitated Ag. The optical absorptance of Bi2Se3 nanoplatelets in UV-visible range decreased with the Ag contents. Results of photocurrent measurements under zero-bias conditions revealed that the deposited Ag affected photosensitivity. A total of 7.1 at.% Ag was associated with approximately 4.25 and 4.57 times higher photocurrents under UV and visible light, respectively, than 0 at.% Ag. The photocurrent in Bi2Se3 at 7.1 at.% Ag under visible light was 1.72-folds of that under UV light. This enhanced photocurrent is attributable to the narrow bandgap (~0.35 eV) of Bi2Se3 nanoplatelets, the Schottky field at the interface between Ag and Bi2Se3, the surface plasmon resonance that is caused by Ag, and the highly conductive surface that is formed from Ag and Bi2Se3. This work suggests that the appropriate Ag deposition enhances the photocurrent in, and increases the photosensitivity of, Bi2Se3 nanoplatelets under UV and visible light.
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43

You, Yue, Jinxia Li, Linlin Chen, et al. "Photothermal Killing of A549 Cells and Autophagy Induction by Bismuth Selenide Particles." Materials 14, no. 12 (2021): 3373. http://dx.doi.org/10.3390/ma14123373.

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With a highly efficient optical absorption capability, bismuth selenide (Bi2Se3) can be used as an outstanding photothermal agent for anti-tumor treatment and shows promise in the field of nanotechnology-based biomedicine. However, little research has been completed on the relevant mechanism underlying the photothermal killing effect of Bi2Se3. Herein, the photothermal effects of Bi2Se3 particles on A549 cells were explored with emphasis put on autophagy. First, we characterized the structure and physicochemical property of the synthesized Bi2Se3 and confirmed their excellent photothermal conversion efficiency (35.72%), photostability, biocompatibility and ability of photothermal killing on A549 cells. Enhanced autophagy was detected in Bi2Se3-exposed cells under an 808 nm laser. Consistently, an elevated expression ratio of microtubule-associated protein 1 light chain 3-II (LC3-II) to LC3-I, a marker of autophagy occurrence, was induced in Bi2Se3-exposed cells upon near infrared (NIR) irradiation. Meanwhile, the expression of cleaved-PARP was increased in the irradiated cells dependently on the exposure concentrations of Bi2Se3 particles. Pharmacological inhibition of autophagy by 3-methyladenine (3-MA) further strengthened the photothermal killing effect of Bi2Se3. Meanwhile, stress-related signaling pathways, including p38 and stress activated protein kinase/c-Jun N-terminal kinase (SAPK/JNK), were activated, coupled with the attenuated PI3K/Akt signaling. Our study finds that autophagy and the activation of stress-related signaling pathways are involved in the photothermal killing of cancerous cells by Bi2Se3, which provides a more understanding of photothermal materials.
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44

Sadigov, F., N. Jafarova, Z. Ismailov, and S. Mamedova. "PHYSICOCHEMICAL STUDY OF THE SYSTEM BI2SE3-SMSBSE3." EurasianUnionScientists 3, no. 3(84) (2021): 36–39. http://dx.doi.org/10.31618/esu.2413-9335.2021.3.84.1320.

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The chemical interaction in the Bi2Se3-SmSbSe3 system is investigated by the methods of physicochemical analysis (DTA, XRD, MSA, microhardness measurement and density determination), a state diagram is constructed.
 As a result, it was revealed that the state diagram of the system belongs to the quasi-binary eutectic type. In the Bi2Se3-SmSbSe3 system in a 1: 1 ratio of components, one triple compound of the composition SmSb1,5Bi1,5Se6 melting congruently at a temperature of 1150K is formed. According to the results of X-ray phase analysis, it was found that the SmSb1,5Bi1,5Se6 compound crystallizes in the tetragonal system with lattice parameters: a = 20.03 Å, c = 13.85 Å, z = 3, density ρpicn = 7.25 g/сm3, ρrent = 7 , 33 g/сm 3.
 On the basis of Bi2Se3, a region of solid solutions wыas found, which reach 6 mol% SmSb1,5Bi1,5Se6.
 In the Bi2Se3-SmSbSe3 system, a continuous series of solid solutions was found in the concentration range 050 mol% Bi2Se3 (SmSbSe3- SmSb1,5Bi1,5Se6).
 Compounds Bi2Se3 and SmSb1,5Bi1,5Se6 form a eutectic with a composition of 20 mol% Bi2Se3 at a temperature of 800K.
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45

Yan, Hao, Bingxue Li, Junjie Pan, et al. "Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting." Nanomaterials 15, no. 1 (2024): 52. https://doi.org/10.3390/nano15010052.

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As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi2Se3) exhibits favorable electrical and optical properties. Here, three distinct morphologies of Bi2Se3 were obtained from bulk Bi2Se3 through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation. Then, the nonlinear optical and absorption characteristics of the Bi2Se3 samples with different morphologies were investigated using open-aperture Z-scan technology. The results reveal that the particle structure of Bi2Se3 exhibits stronger reverse saturable absorption (RSA) than the sheet-like structure. This is attributed to the higher degree of oxidation and greater number of localized defect states in the particle structure than in the sheet-like structure. Electrons in these defect states can be excited to higher energy levels, thereby triggering excited-state and two-photon absorption, which strengthen RSA. Finally, with increasing the RSA, the optical limiting threshold of 2D Bi2Se3 can also be increased. This work expands the potential applications of 2D Bi2Se3 materials in the field of broadband nonlinear photonics.
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46

Lokhande, C. D., B. R. Sankapal, R. S. Mane, et al. "Structural characterization of chemically deposited Bi2S3 and Bi2Se3 thin films." Applied Surface Science 187, no. 1-2 (2002): 108–15. http://dx.doi.org/10.1016/s0169-4332(01)00813-3.

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47

Belonogov, Е. K., S. B. Kuschev, М. P. Sumets, et al. "The effect of photonic processing on increasing the thermoelectric Q-factor of a solid solution Bi2Te3 – Bi2Se3." Physics and Chemistry of Materials Treatment 1 (2022): 5–15. http://dx.doi.org/10.30791/0015-3214-2022-1-5-15.

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In the present work, the phase compositions, morphology, structure, and thermal conductivity of Bi2Te3 – хSeх-based semiconductor wafers before and after the photon treatment (PT) were investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and laser flash methods. The semiconductor plates 10 × 10 × 2 mm in size were prepared by electric discharge cutting from the briquettes, synthesized by hot pressing of Bi2Te3 – хSeх powder. Then, the plates were annealed at 570 K in an argon atmosphere for 24 h. The PT was carried out in an Ar atmosphere by irradiation of gas-discharge xenon lamps with pulses of 1.0 and 1.4 s and energy density ranging from 125 to 175 J/cm2. As revealed, the PT initiates the formation of a thin surface layer with an inhomogeneous nanocrystalline structure and an arbitrary nanocrystals orientation. The volume of material manifests a large-block textured crystalline structure with the original elemental and phase compositions formed during the extrusion. Thereby, a gradient nanostructured region composed of nano-sized and large Bi2Te3 – хSeх crystals with tunneling contacts is formed in the process of PT. We revealed that the PT changes the material bandgap slightly, decreases the concentration of charge carriers, increasing their mobility. The scattering of carriers and photons on linear defects dominates in a wide temperature range in the studied samples. Thereby, the figure of merit rise s by 8 % after PT, due to a decrease in the phonon component of thermal conductivity.
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48

Садыгов, Ф. М., С. Г. Мамедова та З. И. Исмаилов. "Характер фазообразования в системе NdSb2Se4 –Bi2Se3". ТЕНДЕНЦИИ РАЗВИТИЯ НАУКИ И ОБРАЗОВАНИЯ 82, № 1 (2022): 99–101. http://dx.doi.org/10.18411/trnio-02-2022-20.

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Методами физико-химического анализа изучено диаграмма состояния системы NdSb2Se4 –Bi2Se3, которые являются неквазибинарной сечением тройной системе Nd2Se3- Bi2Se3-Sb2Se3. Обнаружено область твердого раствора вблизи исходных компонентов протяженностью до 2 мол% при комнатной температуре. Установлено, что сплавы системы с содержанием 0-5% и 95 мол% Bi2Se3 однофазны, а остальные сплавы двух и трехфазные. При измерении микротвердости в отшлифованных образцах получили ряд значений, 1570МПа соответствует Nd2Se3 , 930 МПа на Bi2Se3 и 1170МПа соответствует NdSb2Se4, 1250 Мпа, NdBiSe3 3440 МПа Nd2Te3.
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49

Mammadova, S., F. Sadigov, Y. Jafarov, S. Mammadova, and Z. Ismailov. "CHARACTER OF CHEMICAL INTERACTION IN Bi2Se3-ErSe AND Bi2Se3-Er2Se3 SYSTEMS." Scientific heritage, no. 101 (November 21, 2022): 21–23. https://doi.org/10.5281/zenodo.7340731.

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The systems Bi2Se3-ErSe and Bi2Se3-Er2Se3, which are quasibinary sections of the ternary system Er-Bi-Se, have been investigated by the methods of physical and chemical analysis. It is established that in the Bi2Se3-Er2Se3 system, a triple compound of the composition ErBiSe3 is formed. Compound ErBiSe3, crystallized in rhombic syngony of stibnite type: а=11.25, b=11.66, c=3.76 Å; The solubility of Er2Se3 (ErSe) from Bi2Se3 is 5,3 mol% at 300 K, respectively.
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50

Ohsumi, Yu, Pankaj Koinkar, Akihiro Furube, Keh Moh Lin, Subhash Kondawar, and Mahendra A. More. "A study on the field emission properties of Bi2Se3 nanostructures prepared by laser ablation." Modern Physics Letters B 33, no. 14n15 (2019): 1940050. http://dx.doi.org/10.1142/s0217984919400505.

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One of the effective methods known as pulse laser ablation in liquid (PLAL), in which a solid target material is immersed in an organic solvent and laser beam is irradiated through liquid on a target material, is a direct method used to generate nanoparticles in liquid medium. The present work is focused on the preparation of bismuth selenide (Bi2Se3) nanoparticles using PLAL to study their field emission characteristics. The PLAL was performed under nanosecond (ns) laser with different ablation time of 120 min and 240 min. The field emission characteristics were measured in the planer “diode” configuration in all metal ultra-high vacuum (UHV) chamber. The prepared Bi2Se3 nanoparticles were analyzed with different characterization techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-visible spectroscopy in order to study the surface morphology and structural information. The generation of Bi2Se3 nanoparticles is found after PLAL, which clearly suggests that bulk Bi2Se3 microsheet is transformed into Bi2Se3 nanoparticles. The X-ray spectra and UV spectra show the formation of nanoparticles upon laser ablation. The improvement in the field emission properties is found for laser-ablated Bi2Se3 nanoparticles. The field emission characteristics lead to increase in current density, which can be ascribed to the reduction in size of Bi2Se3 nanoparticles due to laser ablation. The prepared Bi2Se3 nanoparticles could be considered for novel applications in optoelectronics devices.
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