Journal articles on the topic 'Biaxial Strained'
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Tomita, Motohiro, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, and Atsushi Ogura. "Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation." Key Engineering Materials 470 (February 2011): 123–28. http://dx.doi.org/10.4028/www.scientific.net/kem.470.123.
Full textWang, Cheng, He Ming Zhang, Rong Xi Xuan, and Hui Yong Hu. "Effect of Alloy Disorder Scattering on Electron Mobility Model for Strained-Si1-xGex/Si (101)." Solid State Phenomena 181-182 (November 2011): 364–69. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.364.
Full textJoshi, Garima, and Shiromani Balmukund Rahi. "Analysis of Threshold Voltage of Biaxial Strained Silicon nMOSFET." Asian Journal of Engineering and Applied Technology 1, no. 1 (2012): 31–35. http://dx.doi.org/10.51983/ajeat-2012.1.1.2499.
Full textRani, Farwa, Bassem F. Felemban, Hafiz Tauqeer Ali, and S. Nazir. "Half metal-to-metal transition and superior transport response with a very high Curie-temperature in CoFeRuSn: strain regulations." RSC Advances 15, no. 15 (2025): 11511–22. https://doi.org/10.1039/d5ra01305d.
Full textLiao, M. H., S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu. "Abnormal hole mobility of biaxial strained Si." Journal of Applied Physics 98, no. 6 (2005): 066104. http://dx.doi.org/10.1063/1.2041839.
Full textKim, Ki Soo, Gye Mo Yang, Hyun Wook Shim, Kee Young Lim, Eun-Kyung Suh, and Hyung Jae Lee. "Photoluminescence characterization of biaxial tensile strained GaAs." Journal of Applied Physics 82, no. 10 (1997): 5103–6. http://dx.doi.org/10.1063/1.366311.
Full textWang, Yaqin, Zhengtao Zhang, Yitong Wang, Le Yuan, and Wu Tang. "Anomalous change of electronic properties for uniaxial-strained LaAlO3/SrTiO3 (001) heterostructure." Journal of Applied Physics 133, no. 2 (2023): 024303. http://dx.doi.org/10.1063/5.0126785.
Full textZhou, Kai, and Wei Wei. "Electronic structure and thermoelectric properties of biaxial strained SnSe from first principles calculations." Physica Scripta 97, no. 5 (2022): 055812. http://dx.doi.org/10.1088/1402-4896/ac6384.
Full textAmine, Mohammed Taberkit, Guen-Bouazza Ahlam, and Bouazza Benyounes. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 1 (2018): 421–28. https://doi.org/10.11591/ijece.v8i1.pp421-428.
Full textAn, Jiu Hua, He Ming Zhang, Jian Jun Song, and Xiao Yan Wang. "Electron Mobility Model for Strained-Si/(001) Si1-XGex." Materials Science Forum 663-665 (November 2010): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.477.
Full textWang, Zhenming, Thomas Raistrick, Aidan Street, Matthew Reynolds, Yanjun Liu, and Helen F. Gleeson. "Direct Observation of Biaxial Nematic Order in Auxetic Liquid Crystal Elastomers." Materials 16, no. 1 (2022): 393. http://dx.doi.org/10.3390/ma16010393.
Full textBordallo, C. C. M., P. G. D. Agopian, J. A. Martino, E. Simoen, and C. Claeys. "Radiation Influence on Biaxial+Uniaxial Strained Silicon MuGFETs." ECS Transactions 50, no. 5 (2013): 205–12. http://dx.doi.org/10.1149/05005.0205ecst.
Full textGong, Ying, Chee Ng, and Terence Wong. "Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry." ECS Transactions 11, no. 3 (2019): 123–33. http://dx.doi.org/10.1149/1.2778655.
Full textYip, King Yau, Siu Tung Lam, Kai Ham Yu, et al. "Drastic enhancement of the superconducting temperature in type-II Weyl semimetal candidate MoTe2 via biaxial strain." APL Materials 11, no. 2 (2023): 021111. http://dx.doi.org/10.1063/5.0141112.
Full textZhou, Jing, Hongjun Chen, Yang Wang, and Xingming Long. "Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate." MATEC Web of Conferences 327 (2020): 02003. http://dx.doi.org/10.1051/matecconf/202032702003.
Full textWei, Andy, Stefan Duenkel, Roman Boschke, and Manfred Horstmann. "Integration Challenges for Advanced Process-Strained CMOS on Biaxial-Strained-SOI (SSOI) Substrates." ECS Transactions 6, no. 1 (2019): 15–22. http://dx.doi.org/10.1149/1.2727383.
Full textHirth, J. P. "Stabilization of strained multilayers by thin interlayers." Journal of Materials Research 8, no. 7 (1993): 1572–77. http://dx.doi.org/10.1557/jmr.1993.1572.
Full textTaberkit, Amine Mohammed, Ahlam Guen-Bouazza, and Benyounes Bouazza. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 1 (2018): 421. http://dx.doi.org/10.11591/ijece.v8i1.pp421-428.
Full textLi, Zhong-Zhu, Yu-Hao Li, Qing-Yuan Ren, et al. "Strain Dependence of Energetics and Kinetics of Vacancy in Tungsten." Materials 13, no. 15 (2020): 3375. http://dx.doi.org/10.3390/ma13153375.
Full textKim, Young-Kyu, Bum-Goo Cho, Soon-Yeol Park, and Taeyoung Won. "Ab-Initio Study of Neutral Indium Diffusion in Uniaxially- and Biaxially-Strained Silicon." Journal of Nanoscience and Nanotechnology 8, no. 9 (2008): 4565–68. http://dx.doi.org/10.1166/jnn.2008.ic41.
Full textDos Santos, Sara Dereste, João Antonio Martino, Eddy Simoen, and Cor Claeys. "Impact of Selective Epitaxial Growth and Uniaxial/Biaxial Strain on DIBL Effect Using Triple Gate FinFETs." Journal of Integrated Circuits and Systems 5, no. 2 (2010): 154–59. http://dx.doi.org/10.29292/jics.v5i2.322.
Full textTardif, Samuel, Alban Gassenq, Kevin Guilloy, et al. "Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering." Journal of Applied Crystallography 49, no. 5 (2016): 1402–11. http://dx.doi.org/10.1107/s1600576716010347.
Full textHong, Seung Sae, Mingqiang Gu, Manish Verma, et al. "Extreme tensile strain states in La0.7Ca0.3MnO3 membranes." Science 368, no. 6486 (2020): 71–76. http://dx.doi.org/10.1126/science.aax9753.
Full textGao, Jianfeng, Junqiang Sun, Jialin Jiang, and Yi Zhang. "Demonstration of biaxially tensile-strained Ge/SiGe multiple quantum well (MQW) electroabsorption modulators with low polarization dependence." Nanophotonics 9, no. 14 (2020): 4355–63. http://dx.doi.org/10.1515/nanoph-2020-0321.
Full textShao Chi, Kung, Lucas Barroso Spejo, Renato Amaral Minamisawa, and Marcos Vinicius Puydinger dos Santos. "Optimized lithographic-based nanofabrication processes for the giant piezoresistance characterization of individual silicon nanowires." Journal of Integrated Circuits and Systems 20, no. 1 (2025): 1–8. https://doi.org/10.29292/jics.v20i1.930.
Full textYu, Yang, Zhenhan Fang, Yufeng Luo, et al. "Ultra-stretchable supercapacitors based on biaxially pre-strained super-aligned carbon nanotube films." Nanoscale 12, no. 47 (2020): 24259–65. http://dx.doi.org/10.1039/d0nr06576e.
Full textLee, Yun Hee, Jae Il Jang, and Dong Il Kwon. "Influence of Biaxial Surface Stress on Mechanical Indenting Deformations." Materials Science Forum 449-452 (March 2004): 93–96. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.93.
Full textZsoldos, Lehel, Viktor Gröger, and Ernst Haugeneder. "Strain inhomogeneity mapping in single-crystal layers and membranes by X-ray diffractometry." Journal of Applied Crystallography 35, no. 1 (2002): 17–20. http://dx.doi.org/10.1107/s0021889801016703.
Full textPešić-Brđanin, Tatjana, and Branko L. Dokić. "Strained Silicon Layer in CMOS Technology." Electronics ETF 18, no. 2 (2014): 63. http://dx.doi.org/10.7251/els1418063p.
Full textKhan, S. A., B. Amin, Li-Yong Gan, and Iftikhar Ahmad. "Strain engineering of electronic structures and photocatalytic responses of MXenes functionalized by oxygen." Physical Chemistry Chemical Physics 19, no. 22 (2017): 14738–44. http://dx.doi.org/10.1039/c7cp02513k.
Full textAndrii, Bambura, Mel'nyk Ihor, Bilozir Vitaliy, Sorokhtey Vasyl, Prystavskyi Taras, and Partuta Volodymyr. "THE STRESSED-DEFORMED STATE OF SLAB REINFORCED-CONCRETE HOLLOW STRUCTURES CONSIDERING THE BIAXIAL COMPRESSION OF CONCRETE." Eastern-European Journal of Enterprise Technologies 1, no. 7 (103) (2020): 34–42. https://doi.org/10.15587/1729-4061.2020.194145.
Full textChaudhry, Amit, and Sonu Sangwan. "An Analytical Hole Mobility Model for Biaxial Strained-Si-p-MOSFET." Journal of Computational and Theoretical Nanoscience 10, no. 5 (2013): 1085–90. http://dx.doi.org/10.1166/jctn.2013.2810.
Full textLi-Xia, Zhao, Yang Min-Yu, and Song Jian-Jun. "Raman Spectrum Stress Model of the Uniaxial/Biaxial Strained Ge Materials." Journal of Computational and Theoretical Nanoscience 12, no. 12 (2015): 5114–18. http://dx.doi.org/10.1166/jctn.2015.4484.
Full textMa, Fei, Tian-Wei Zhang, Ke-Wei Xu, and Paul K. Chu. "Conversion of strain state from biaxial to uniaxial in strained silicon." Applied Physics Letters 98, no. 19 (2011): 191907. http://dx.doi.org/10.1063/1.3589981.
Full textMorrison, C., and M. Myronov. "Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium." Applied Physics Letters 111, no. 19 (2017): 192103. http://dx.doi.org/10.1063/1.5010933.
Full textSantos, Sara D., João A. Martino, Eddy Simoen, and Cor Claeys. "DIBL Study Using Triple Gate Unstrained and Uniaxial/Biaxial Strained FinFETs." ECS Transactions 23, no. 1 (2019): 591–96. http://dx.doi.org/10.1149/1.3183768.
Full textThean, Aaron. "Strained Silicon Directly on Insulator (SSOI): Biaxial, Uniaxial, or Hybrid Strain?" ECS Transactions 6, no. 4 (2019): 287–93. http://dx.doi.org/10.1149/1.2728873.
Full textWang Cheng, Wang Guan-Yu, Zhang He-Ming, et al. "Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si." Acta Physica Sinica 61, no. 4 (2012): 047203. http://dx.doi.org/10.7498/aps.61.047203.
Full textChaudhry, Amit, J. N. Roy, and S. Sangwan. "SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs." Journal of Semiconductors 32, no. 5 (2011): 054001. http://dx.doi.org/10.1088/1674-4926/32/5/054001.
Full textGai, Yanqin, Jiaping Jiang, Yuxi Wu, and Gang Tang. "Can singly charged oxygen vacancies induce ferromagnetism in biaxial strained ZnO?" Physica Scripta 91, no. 4 (2016): 045801. http://dx.doi.org/10.1088/0031-8949/91/4/045801.
Full textSteele, Julian A., Handong Jin, Iurii Dovgaliuk, et al. "Thermal unequilibrium of strained black CsPbI3 thin films." Science 365, no. 6454 (2019): 679–84. http://dx.doi.org/10.1126/science.aax3878.
Full textRezania, H., M. Abdi, E. Nourian, and B. Astinchap. "Effects of spin–orbit coupling on transmission and absorption of electromagnetic waves in strained armchair phosphorene nanoribbons." RSC Advances 13, no. 32 (2023): 22287–301. http://dx.doi.org/10.1039/d3ra03686c.
Full textFerreira, Jetson Lemos, José Osvaldo Amaral Tepedino, Marco Antonio Wolff, and Luciano Pessanha Moreira. "Strain-Path Effects on the Formability Behavior of Interstitial-Free Steel." Key Engineering Materials 651-653 (July 2015): 126–31. http://dx.doi.org/10.4028/www.scientific.net/kem.651-653.126.
Full textGeandier, G., D. Faurie, P. O. Renault, D. Thiaudière, and E. Le Bourhis. "In situmonitoring of X-ray strain pole figures of a biaxially deformed ultra-thin film on a flexible substrate." Journal of Applied Crystallography 47, no. 1 (2014): 181–87. http://dx.doi.org/10.1107/s1600576713030720.
Full textDos Santos, Sara D., Talitha Nicoletti, João A. Martino, Eddy Simoen, and Cor Claeys. "DIBL Behavior of Triple Gate FinFETs with SEG on Biaxial Strained Devices." ECS Transactions 31, no. 1 (2019): 51–58. http://dx.doi.org/10.1149/1.3474141.
Full textBufler, F. M., and W. Fichtner. "Hole and electron transport in strained Si: Orthorhombic versus biaxial tensile strain." Applied Physics Letters 81, no. 1 (2002): 82–84. http://dx.doi.org/10.1063/1.1491283.
Full textFeste, S. F., Th Schäpers, D. Buca, et al. "Measurement of effective electron mass in biaxial tensile strained silicon on insulator." Applied Physics Letters 95, no. 18 (2009): 182101. http://dx.doi.org/10.1063/1.3254330.
Full textQi, Yajun, Chuanwei Huang, Zuhuang Chen, et al. "Nanoscale phase separation in quasi-uniaxial and biaxial strained multiferroic thin films." Applied Physics Letters 99, no. 13 (2011): 132905. http://dx.doi.org/10.1063/1.3644958.
Full textYamamoto, Aishi, Yoichi Yamada, and Yasuaki Masumoto. "Biaxial splitting of optical phonon modes in ZnSe‐ZnS strained‐layer superlattices." Applied Physics Letters 58, no. 19 (1991): 2135–37. http://dx.doi.org/10.1063/1.104984.
Full textLin, Chung-Yi, Hung-Yu Ye, Fang-Liang Lu, H. S. Lan, and C. W. Liu. "Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well." Optical Materials Express 8, no. 9 (2018): 2795. http://dx.doi.org/10.1364/ome.8.002795.
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