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Journal articles on the topic 'Biaxial Strained'

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1

Tomita, Motohiro, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, and Atsushi Ogura. "Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation." Key Engineering Materials 470 (February 2011): 123–28. http://dx.doi.org/10.4028/www.scientific.net/kem.470.123.

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Global and local strained-Si samples, namely strained-Si on insulator (SSOI) wafer and a Si substrate with a patterned SiN film were each evaluated by electron backscattering pattern (EBSP). In the EBSP measurements for SSOI, biaxial tensile stresses (biaxial tensile strains and compressive strain perpendicular to the surface) were obtained, whose values were consistent with those obtained by UV-Raman spectroscopy. One-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by EBSP, UV-Raman spectroscopy with a deconvolution method, and edge force model c
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2

Wang, Cheng, He Ming Zhang, Rong Xi Xuan, and Hui Yong Hu. "Effect of Alloy Disorder Scattering on Electron Mobility Model for Strained-Si1-xGex/Si (101)." Solid State Phenomena 181-182 (November 2011): 364–69. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.364.

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Si-based strained technology is currently an important topic of concern in the microelectronics field. The stress-induced enhancement of electron mobility contributes to the improved performance of Si-based strained devices. In this paper, Based on both the electron effective mass and the scattering rate models for strained-Si1-xGex/Si (101), an analytical electron mobility model for biaxial compressive strained-Si1-xGex /Si (101) is presented. The results show that the stress doesn’t make the electron mobility increased, but the electron mobility for [100] and [001] orientations decrease with
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3

Joshi, Garima, and Shiromani Balmukund Rahi. "Analysis of Threshold Voltage of Biaxial Strained Silicon nMOSFET." Asian Journal of Engineering and Applied Technology 1, no. 1 (2012): 31–35. http://dx.doi.org/10.51983/ajeat-2012.1.1.2499.

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For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility with conventional silicon processing. In this work we present the analysis of effect of strain on threshold voltage of biaxial strained-Si/Si1-x Gex nMOSFET taking into consideration the quantum mechanical effect (QME).
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4

Rani, Farwa, Bassem F. Felemban, Hafiz Tauqeer Ali, and S. Nazir. "Half metal-to-metal transition and superior transport response with a very high Curie-temperature in CoFeRuSn: strain regulations." RSC Advances 15, no. 15 (2025): 11511–22. https://doi.org/10.1039/d5ra01305d.

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5

Liao, M. H., S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu. "Abnormal hole mobility of biaxial strained Si." Journal of Applied Physics 98, no. 6 (2005): 066104. http://dx.doi.org/10.1063/1.2041839.

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6

Kim, Ki Soo, Gye Mo Yang, Hyun Wook Shim, Kee Young Lim, Eun-Kyung Suh, and Hyung Jae Lee. "Photoluminescence characterization of biaxial tensile strained GaAs." Journal of Applied Physics 82, no. 10 (1997): 5103–6. http://dx.doi.org/10.1063/1.366311.

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7

Wang, Yaqin, Zhengtao Zhang, Yitong Wang, Le Yuan, and Wu Tang. "Anomalous change of electronic properties for uniaxial-strained LaAlO3/SrTiO3 (001) heterostructure." Journal of Applied Physics 133, no. 2 (2023): 024303. http://dx.doi.org/10.1063/5.0126785.

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The first-principles electronic structure calculation was applied to investigate the electronic properties of the LaAlO[Formula: see text]/SrTiO[Formula: see text] (001) heterostructure system (HSs) under strain. The results show that the distorted structure at the interface determines the occupied orbitals of 2DEG, further resulting in different sensitivities of interfacial charge carrier density, electron effective mass, electron mobility, and electrical conductivity on strain. The interfacial metallic states of tensile-strained and biaxial-compressive-strained LaAlO[Formula: see text]/SrTiO
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8

Zhou, Kai, and Wei Wei. "Electronic structure and thermoelectric properties of biaxial strained SnSe from first principles calculations." Physica Scripta 97, no. 5 (2022): 055812. http://dx.doi.org/10.1088/1402-4896/ac6384.

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Abstract Biaxial strain effects on the electronic structure and thermoelectric properties of the Pnma phase SnSe are investigated by first-principles calculations and Boltzmann transport theory. The biaxial strains ε ab, ε ac and ε bc were applied on the ab, ac and bc planes from −6% to 6%, respectively. The band gap decreases under the compressive strains, and increases under the tensile strains except for ε ab = 6%. The ε bc can tune the band gap in a large range from 0 eV to 0.88 eV. A semiconductor to metal transition is observed at ε bc < = −4%. The biaxial strains also influence the e
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9

Amine, Mohammed Taberkit, Guen-Bouazza Ahlam, and Bouazza Benyounes. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 1 (2018): 421–28. https://doi.org/10.11591/ijece.v8i1.pp421-428.

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The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate th
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10

An, Jiu Hua, He Ming Zhang, Jian Jun Song, and Xiao Yan Wang. "Electron Mobility Model for Strained-Si/(001) Si1-XGex." Materials Science Forum 663-665 (November 2010): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.477.

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There has been much interest in the Si-based strained technology lately. The improvement of strained-Si device performance is due to the enhancement of the mobility, so the further study on mobility is essential in both theory and practice aspects. In this paper, an analytical model of the electron mobility of strained-Si material, such as biaxial tensile strained-Si material grown on relaxed Si1-xGex (0≤x≤0.6) substrates, as a function of strain and different orientations is obtained. The results show that the electron mobilities for [100] and [010] orientations increase rapidly with increasi
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11

Wang, Zhenming, Thomas Raistrick, Aidan Street, Matthew Reynolds, Yanjun Liu, and Helen F. Gleeson. "Direct Observation of Biaxial Nematic Order in Auxetic Liquid Crystal Elastomers." Materials 16, no. 1 (2022): 393. http://dx.doi.org/10.3390/ma16010393.

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Auxetic materials exhibit a negative Poisson’s ratio, i.e., they become thicker rather than thinner in at least one dimension when strained. Recently, a nematic liquid crystal elastomer (LCE) was shown to be the first synthetic auxetic material at a molecular level. Understanding the mechanism of the auxetic response in LCEs is clearly important, and it has been suggested through detailed Raman scattering studies that it is related to the reduction of uniaxial order and emergence of biaxial order on strain. In this paper, we demonstrate direct observation of the biaxial order in an auxetic LCE
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12

Bordallo, C. C. M., P. G. D. Agopian, J. A. Martino, E. Simoen, and C. Claeys. "Radiation Influence on Biaxial+Uniaxial Strained Silicon MuGFETs." ECS Transactions 50, no. 5 (2013): 205–12. http://dx.doi.org/10.1149/05005.0205ecst.

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13

Gong, Ying, Chee Ng, and Terence Wong. "Characterization of Biaxial Strained-Silicon by Spectroscopic Ellipsometry." ECS Transactions 11, no. 3 (2019): 123–33. http://dx.doi.org/10.1149/1.2778655.

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14

Yip, King Yau, Siu Tung Lam, Kai Ham Yu, et al. "Drastic enhancement of the superconducting temperature in type-II Weyl semimetal candidate MoTe2 via biaxial strain." APL Materials 11, no. 2 (2023): 021111. http://dx.doi.org/10.1063/5.0141112.

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A type-II Weyl semimetal candidate MoTe2, which superconducts at T c ∼0.1 K, is one of the promising candidates for realizing topological superconductivity. However, the exceedingly low T c is associated with a small upper critical field ( H c2), implying a fragile superconducting phase that only exists on a small region of the H– T phase diagram. Here, we describe a simple and versatile approach based on the differential thermal expansion between dissimilar materials to subject a thin single crystalline MoTe2 to biaxial strain. With this approach, we successfully enhance the T c of MoTe2 by f
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15

Zhou, Jing, Hongjun Chen, Yang Wang, and Xingming Long. "Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate." MATEC Web of Conferences 327 (2020): 02003. http://dx.doi.org/10.1051/matecconf/202032702003.

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Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects. In this paper, the effects of inhomogeneous biaxial strain in different regions of the AlGaN barrier layer on electrical properties of normally-off HEMTs with p-GaN gate were discussed. The results show that biaxial strain applied in three regions has different influence on transfer, output and breakdown characteristics of the device. The strain applied in region under gate has the most significant imp
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16

Wei, Andy, Stefan Duenkel, Roman Boschke, and Manfred Horstmann. "Integration Challenges for Advanced Process-Strained CMOS on Biaxial-Strained-SOI (SSOI) Substrates." ECS Transactions 6, no. 1 (2019): 15–22. http://dx.doi.org/10.1149/1.2727383.

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17

Hirth, J. P. "Stabilization of strained multilayers by thin interlayers." Journal of Materials Research 8, no. 7 (1993): 1572–77. http://dx.doi.org/10.1557/jmr.1993.1572.

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Strained multilayers composed of two misfitting layers and a third, thin interlayer are considered. With appropriate intermediate lattice parameters for the interlayer, the latter is shown to stabilize the structure with respect to misfit dislocation formation. Cases of misfit corresponding both to balanced biaxial stress and to pure shear stress in the interface are treated.
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18

Taberkit, Amine Mohammed, Ahlam Guen-Bouazza, and Benyounes Bouazza. "Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 1 (2018): 421. http://dx.doi.org/10.11591/ijece.v8i1.pp421-428.

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The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate th
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19

Li, Zhong-Zhu, Yu-Hao Li, Qing-Yuan Ren, et al. "Strain Dependence of Energetics and Kinetics of Vacancy in Tungsten." Materials 13, no. 15 (2020): 3375. http://dx.doi.org/10.3390/ma13153375.

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We investigate the influence of hydrostatic/biaxial strain on the formation, migration, and clustering of vacancy in tungsten (W) using a first-principles method, and show that the vacancy behaviors are strongly dependent on the strain. Both a monovacancy formation energy and a divacancy binding energy decrease with the increasing of compressive hydrostatic/biaxial strain, but increase with the increasing of tensile strain. Specifically, the binding energy of divacancy changes from negative to positive when the hydrostatic (biaxial) tensile strain is larger than 1.5% (2%). These results indica
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20

Kim, Young-Kyu, Bum-Goo Cho, Soon-Yeol Park, and Taeyoung Won. "Ab-Initio Study of Neutral Indium Diffusion in Uniaxially- and Biaxially-Strained Silicon." Journal of Nanoscience and Nanotechnology 8, no. 9 (2008): 4565–68. http://dx.doi.org/10.1166/jnn.2008.ic41.

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In this paper, we present our ab-initio study on energy configurations, minimum energy path (MEP), and migration energy for neutral indium diffusion in a uniaxial and biaxial tensile strained {100} silicon layer. Our ab-initio calculation of the electronic structure allowed us to figure out transient atomistic configurations during the indium diffusion in strained silicon. We found that the lowest-energy structure (Ins – SiiTd) consists of indium sitting on a substitutional site while stabilizing a silicon self-interstitial in a nearby tetrahedral position. Our ab-initio calculation implied th
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21

Dos Santos, Sara Dereste, João Antonio Martino, Eddy Simoen, and Cor Claeys. "Impact of Selective Epitaxial Growth and Uniaxial/Biaxial Strain on DIBL Effect Using Triple Gate FinFETs." Journal of Integrated Circuits and Systems 5, no. 2 (2010): 154–59. http://dx.doi.org/10.29292/jics.v5i2.322.

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The influence of Selective Epitaxial Growth (SEG) and the Uniaxial and Biaxial Strain are studied in triple gate FinFETs, analyzing the Drain Induced Barrier Lowering Effect (DIBL). The splits using SEG present better performance for strained devices than the unstrained ones but the inverse is observed for devices without SEG. The DIBL values are higher for SEG devices in all cases. For devices without SEG, the effect of mechanical stress is more pronounced and the mobility is higher in the uniaxially strained devices. These devices have lower VT values in the saturation condition causing the
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22

Tardif, Samuel, Alban Gassenq, Kevin Guilloy, et al. "Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering." Journal of Applied Crystallography 49, no. 5 (2016): 1402–11. http://dx.doi.org/10.1107/s1600576716010347.

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Laue micro-diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micrometre scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. The measurements were performed in a series of micro-devices under either uniaxial or biaxial stress and an excellent agreement with numerical simulations was found. This shows the superior po
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23

Hong, Seung Sae, Mingqiang Gu, Manish Verma, et al. "Extreme tensile strain states in La0.7Ca0.3MnO3 membranes." Science 368, no. 6486 (2020): 71–76. http://dx.doi.org/10.1126/science.aax9753.

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A defining feature of emergent phenomena in complex oxides is the competition and cooperation between ground states. In manganites, the balance between metallic and insulating phases can be tuned by the lattice; extending the range of lattice control would enhance the ability to access other phases. We stabilized uniform extreme tensile strain in nanoscale La0.7Ca0.3MnO3 membranes, exceeding 8% uniaxially and 5% biaxially. Uniaxial and biaxial strain suppresses the ferromagnetic metal at distinctly different strain values, inducing an insulator that can be extinguished by a magnetic field. Ele
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24

Gao, Jianfeng, Junqiang Sun, Jialin Jiang, and Yi Zhang. "Demonstration of biaxially tensile-strained Ge/SiGe multiple quantum well (MQW) electroabsorption modulators with low polarization dependence." Nanophotonics 9, no. 14 (2020): 4355–63. http://dx.doi.org/10.1515/nanoph-2020-0321.

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AbstractWe demonstrate a novel biaxially tensile-strained Ge/SiGe multiple quantum well (MQW) electroabsorption modulator with low polarization dependence. The device is waveguide integrated and has a length of 900 μm. Suspended microbridge structure is utilized to introduce biaxial tensile strain to the Ge/Si0.19Ge0.81 MQWs. Light is coupled into and out of the waveguide through deeply etched facets at the ends of the waveguide. Both TE and TM polarized electroabsorption contrast ratios are tested by the use of polarization maintaining focusing lensed fiber and a linear polarizer. A polarizat
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25

Shao Chi, Kung, Lucas Barroso Spejo, Renato Amaral Minamisawa, and Marcos Vinicius Puydinger dos Santos. "Optimized lithographic-based nanofabrication processes for the giant piezoresistance characterization of individual silicon nanowires." Journal of Integrated Circuits and Systems 20, no. 1 (2025): 1–8. https://doi.org/10.29292/jics.v20i1.930.

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In this work, we aim to fabricate strained silicon nanowires (sSiNWs) to study their electric mobility and giant piezoresistance. Through techniques compatible with the CMOS technology, individual nanowires (NWs) were fabricated from strained silicon-on-insulator (sSOI) thin films with 0.8% biaxial strain. Subsequently, the buried oxide (BOX) was removed from the SOI film, thus suspending the NWs, and the new boundary condition of its surface induces mechanical stress amplification, now uniaxial in the NW longitudinal direction. The proposal is to stress the NWs to levels higher than those emp
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26

Yu, Yang, Zhenhan Fang, Yufeng Luo, et al. "Ultra-stretchable supercapacitors based on biaxially pre-strained super-aligned carbon nanotube films." Nanoscale 12, no. 47 (2020): 24259–65. http://dx.doi.org/10.1039/d0nr06576e.

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Ultra-stretchable supercapacitors are fabricated with super-aligned carbon nanotube film and active carbon powers by a biaxial pre-strain process and demonstrate high stretchability and excellent durability at 150% strains in multiple directions.
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27

Lee, Yun Hee, Jae Il Jang, and Dong Il Kwon. "Influence of Biaxial Surface Stress on Mechanical Indenting Deformations." Materials Science Forum 449-452 (March 2004): 93–96. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.93.

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A theoretical model has been proposed to assess quantitative residual stress from a stress-induced shift in an indentation curve, but the assumption in this model of equibiaxial surface stress has obstructed its application to real structures in complex stress states. Thus we investigated the influence of non-equibiaxial surface stress on contact deformation through instrumented indentations of a biaxially strained steel plate in order to extend the model to a general surface stress by considering a ratio of two principal stresses.
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28

Zsoldos, Lehel, Viktor Gröger, and Ernst Haugeneder. "Strain inhomogeneity mapping in single-crystal layers and membranes by X-ray diffractometry." Journal of Applied Crystallography 35, no. 1 (2002): 17–20. http://dx.doi.org/10.1107/s0021889801016703.

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For the measurement of the strain distribution in single-crystalline thin layers, it is in principle enough to measure the shift of the angular position of a single Bragg reflection. This is usually disturbed by the curvature of the specimen. Because of the strain sensitivity of different reflections, it is possible to choose two appropriate Bragg peaks which allow the elimination of the effect of any macroscopic curvature by comparing their shifts. The strain sensitivity of a strained isotropic layer under biaxial stress is presented, together with a few examples of choosing a pair of reflect
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29

Pešić-Brđanin, Tatjana, and Branko L. Dokić. "Strained Silicon Layer in CMOS Technology." Electronics ETF 18, no. 2 (2014): 63. http://dx.doi.org/10.7251/els1418063p.

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Semiconductor industry is currently facing with thefact that conventional submicron CMOS technology isapproaching the end of their capabilities, at least when it comes toscaling the dimensions of the components. Therefore, muchattention is paid to device technology that use new technologicalstructures and new channel materials. Modern technologicalprocesses, which mainly include ultra high vacuum chemicalvapor deposition, molecular beam epitaxy and metal-organicmolecular vapor deposition, enable the obtaining of ultrathin,crystallographically almost perfect, strained layers of high purity.In t
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Khan, S. A., B. Amin, Li-Yong Gan, and Iftikhar Ahmad. "Strain engineering of electronic structures and photocatalytic responses of MXenes functionalized by oxygen." Physical Chemistry Chemical Physics 19, no. 22 (2017): 14738–44. http://dx.doi.org/10.1039/c7cp02513k.

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Unstrained and biaxial tensile strained Ti<sub>2</sub>CO<sub>2</sub>, Zr<sub>2</sub>CO<sub>2</sub>, and Hf<sub>2</sub>CO<sub>2</sub>can be used to oxidize H<sub>2</sub>O into O<sub>2</sub>, while compressed Ti<sub>2</sub>CO<sub>2</sub>fails to oxidize H<sub>2</sub>O to O<sub>2</sub>.
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31

Andrii, Bambura, Mel'nyk Ihor, Bilozir Vitaliy, Sorokhtey Vasyl, Prystavskyi Taras, and Partuta Volodymyr. "THE STRESSED-DEFORMED STATE OF SLAB REINFORCED-CONCRETE HOLLOW STRUCTURES CONSIDERING THE BIAXIAL COMPRESSION OF CONCRETE." Eastern-European Journal of Enterprise Technologies 1, no. 7 (103) (2020): 34–42. https://doi.org/10.15587/1729-4061.2020.194145.

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In order to significantly reduce the weight of flat monolithic reinforced concrete floors, foundations, and other slab structures, construction operations have increasingly involved effective inserts as the separate articles made from relatively light and cheap materials that are placed in the midsection and left in the slabs after concreting. The inserts made from relatively light and cheap materials, with respect to concrete, have the strength and rigidity that are orders of magnitude less and are essentially used to form hollows. The inserts considered in this paper are prismatic. When the
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32

Chaudhry, Amit, and Sonu Sangwan. "An Analytical Hole Mobility Model for Biaxial Strained-Si-p-MOSFET." Journal of Computational and Theoretical Nanoscience 10, no. 5 (2013): 1085–90. http://dx.doi.org/10.1166/jctn.2013.2810.

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Li-Xia, Zhao, Yang Min-Yu, and Song Jian-Jun. "Raman Spectrum Stress Model of the Uniaxial/Biaxial Strained Ge Materials." Journal of Computational and Theoretical Nanoscience 12, no. 12 (2015): 5114–18. http://dx.doi.org/10.1166/jctn.2015.4484.

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34

Ma, Fei, Tian-Wei Zhang, Ke-Wei Xu, and Paul K. Chu. "Conversion of strain state from biaxial to uniaxial in strained silicon." Applied Physics Letters 98, no. 19 (2011): 191907. http://dx.doi.org/10.1063/1.3589981.

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Morrison, C., and M. Myronov. "Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium." Applied Physics Letters 111, no. 19 (2017): 192103. http://dx.doi.org/10.1063/1.5010933.

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36

Santos, Sara D., João A. Martino, Eddy Simoen, and Cor Claeys. "DIBL Study Using Triple Gate Unstrained and Uniaxial/Biaxial Strained FinFETs." ECS Transactions 23, no. 1 (2019): 591–96. http://dx.doi.org/10.1149/1.3183768.

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37

Thean, Aaron. "Strained Silicon Directly on Insulator (SSOI): Biaxial, Uniaxial, or Hybrid Strain?" ECS Transactions 6, no. 4 (2019): 287–93. http://dx.doi.org/10.1149/1.2728873.

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38

Wang Cheng, Wang Guan-Yu, Zhang He-Ming, et al. "Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si." Acta Physica Sinica 61, no. 4 (2012): 047203. http://dx.doi.org/10.7498/aps.61.047203.

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39

Chaudhry, Amit, J. N. Roy, and S. Sangwan. "SPICE compatible analytical electron mobility model for biaxial strained-Si-MOSFETs." Journal of Semiconductors 32, no. 5 (2011): 054001. http://dx.doi.org/10.1088/1674-4926/32/5/054001.

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40

Gai, Yanqin, Jiaping Jiang, Yuxi Wu, and Gang Tang. "Can singly charged oxygen vacancies induce ferromagnetism in biaxial strained ZnO?" Physica Scripta 91, no. 4 (2016): 045801. http://dx.doi.org/10.1088/0031-8949/91/4/045801.

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41

Steele, Julian A., Handong Jin, Iurii Dovgaliuk, et al. "Thermal unequilibrium of strained black CsPbI3 thin films." Science 365, no. 6454 (2019): 679–84. http://dx.doi.org/10.1126/science.aax3878.

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The high-temperature, all-inorganic CsPbI3 perovskite black phase is metastable relative to its yellow, nonperovskite phase at room temperature. Because only the black phase is optically active, this represents an impediment for the use of CsPbI3 in optoelectronic devices. We report the use of substrate clamping and biaxial strain to render black-phase CsPbI3 thin films stable at room temperature. We used synchrotron-based, grazing incidence, wide-angle x-ray scattering to track the introduction of crystal distortions and strain-driven texture formation within black CsPbI3 thin films when they
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42

Rezania, H., M. Abdi, E. Nourian, and B. Astinchap. "Effects of spin–orbit coupling on transmission and absorption of electromagnetic waves in strained armchair phosphorene nanoribbons." RSC Advances 13, no. 32 (2023): 22287–301. http://dx.doi.org/10.1039/d3ra03686c.

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We compute the optical conductivity, both the imaginary and real parts of the dielectric constant, and the optical coefficients of armchair phosphorene nanoribbons under application of biaxial and uniaxial strains.
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43

Ferreira, Jetson Lemos, José Osvaldo Amaral Tepedino, Marco Antonio Wolff, and Luciano Pessanha Moreira. "Strain-Path Effects on the Formability Behavior of Interstitial-Free Steel." Key Engineering Materials 651-653 (July 2015): 126–31. http://dx.doi.org/10.4028/www.scientific.net/kem.651-653.126.

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In this work, the formability behavior of Interstitial-Free (IF) steel sheet, grade DC07 with 0.65 mm of nominal thickness, was evaluated by means of both linear and bi-linear strain-paths to define the Forming Limit Curve (FLC) at the onset of necking according to ASTM E22182 standard. In the first strain-path, flat-bottomed punch with 200 mm diameter and 10 mm corner die radius was adopted together with counter-blanks of an IF steel sheet grade DC07 with 0.80 mm nominal thickness in order to yield two equal amounts of plastic work under uniaxial tension and under equibiaxial stretching strai
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44

Geandier, G., D. Faurie, P. O. Renault, D. Thiaudière, and E. Le Bourhis. "In situmonitoring of X-ray strain pole figures of a biaxially deformed ultra-thin film on a flexible substrate." Journal of Applied Crystallography 47, no. 1 (2014): 181–87. http://dx.doi.org/10.1107/s1600576713030720.

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X-ray strain pole figures (SPFs) have been capturedin situduring biaxial deformation of a gold ultra-thin film (thickness = 40 nm) deposited on a polymer substrate. An area detector was used to extract one line in the reciprocal space while the strained sample was rotated azimuthally step by step to produce the SPF. Such SPFs have been obtained for a textured anisotropic ultra-thin film under controlled non-equibiaxial loading using the SOLEIL synchrotron DIFFABS tensile device. The experimental setup allows the pole figure measurements of {111} and {200} reflections to be performed simultaneo
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45

Dos Santos, Sara D., Talitha Nicoletti, João A. Martino, Eddy Simoen, and Cor Claeys. "DIBL Behavior of Triple Gate FinFETs with SEG on Biaxial Strained Devices." ECS Transactions 31, no. 1 (2019): 51–58. http://dx.doi.org/10.1149/1.3474141.

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46

Bufler, F. M., and W. Fichtner. "Hole and electron transport in strained Si: Orthorhombic versus biaxial tensile strain." Applied Physics Letters 81, no. 1 (2002): 82–84. http://dx.doi.org/10.1063/1.1491283.

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47

Feste, S. F., Th Schäpers, D. Buca, et al. "Measurement of effective electron mass in biaxial tensile strained silicon on insulator." Applied Physics Letters 95, no. 18 (2009): 182101. http://dx.doi.org/10.1063/1.3254330.

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48

Qi, Yajun, Chuanwei Huang, Zuhuang Chen, et al. "Nanoscale phase separation in quasi-uniaxial and biaxial strained multiferroic thin films." Applied Physics Letters 99, no. 13 (2011): 132905. http://dx.doi.org/10.1063/1.3644958.

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49

Yamamoto, Aishi, Yoichi Yamada, and Yasuaki Masumoto. "Biaxial splitting of optical phonon modes in ZnSe‐ZnS strained‐layer superlattices." Applied Physics Letters 58, no. 19 (1991): 2135–37. http://dx.doi.org/10.1063/1.104984.

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50

Lin, Chung-Yi, Hung-Yu Ye, Fang-Liang Lu, H. S. Lan, and C. W. Liu. "Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well." Optical Materials Express 8, no. 9 (2018): 2795. http://dx.doi.org/10.1364/ome.8.002795.

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