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Relevant bibliographies by topics / BiCMOS integrated circuits

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Academic literature on the topic 'BiCMOS integrated circuits'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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Journal articles on the topic "BiCMOS integrated circuits"

1

Jensen, Thomas, Thualfiqar Al-Sawaf, Marco Lisker, Srdjan Glisic, Mohamed Elkhouly, Tomas Kraemer, Ina Ostermay, et al. "Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology." International Journal of Microwave and Wireless Technologies 6, no. 3-4 (May 12, 2014): 225–33. http://dx.doi.org/10.1017/s1759078714000579.

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The paper presents millimeter-wave (mm-wave) signal sources using a hetero-integrated InP-on-BiCMOS semiconductor technology. Mm-wave signal sources feature fundamental frequency voltage-controlled oscillators (VCOs) in BiCMOS, which drive frequency multiplier–amplifier chains in transferred-substrate (TS) InP-DHBT technology, heterogeneously integrated on top of the BiCMOS wafer in a wafer-level bonding process. Both circuits are biased through a single set of bias pads and compact low-loss transitions from BiCMOS to InP circuits and vice versa have been developed, which allows seamless signal routing through both technologies exhibiting 0.5 dB insertion loss up to 200 GHz. One VCO operates at 82 GHz with a tuning range of 600 MHz and an output power of approximately 8 dBm. A frequency doubler combined with this VCO circuit delivers 0 dBm at 164 GHz and a frequency tripler with a similar VCO delivers −10 dBm at 246 GHz. Another hetero-integrated W-band doubler–amplifier circuit demonstrates 12.9 dBm saturated output power with 5.9 dB conversion gain at 96 GHz. A direct comparison of the TS InP-DHBT MMIC with either silicon or traditional AlN carrier substrates shows the favorable properties of the hetero-integrated process discussed here. The results demonstrate the feasibility of hetero-integrated circuits operating well above 100 GHz.

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Kazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (March 28, 2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

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Joardar, Kuntal. "Substrate crosstalk in BiCMOS mixed mode integrated circuits." Solid-State Electronics 39, no. 4 (April 1996): 511–16. http://dx.doi.org/10.1016/0038-1101(95)00189-1.

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4

Lahbib, Imene, Mohamed Aziz Doukkali, Philippe Descamps, Patrice Gamand, Christophe Kelma, and Olivier Tesson. "Design and characterization of an integrated microwave generator for BIST applications." International Journal of Microwave and Wireless Technologies 6, no. 2 (February 27, 2014): 195–200. http://dx.doi.org/10.1017/s1759078714000105.

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This paper presents a circuit architecture for a new integrated on chip test method for microwave circuits. The proposed built-in-self-test (BIST) cell targets a direct low-cost measurement technique of the gain and the 1 dB input compression point (CP1) of a K-band satellite receiver in the 18–22 GHz frequency bandwidth. A signal generator at the radiofrequency (RF) front end input of the device under test (DUT) has been integrated on the same chip. To inject this RF signal, a loopback technique has been used and the design has been accommodated for it. This paper focuses on the design of the most sensitive block of the BIST circuit, i.e. the RF signal generator. This circuit, fabricated in a SIGe:C BiCMOS process, consumes 10 mA. It presents a dynamic power range of 17 dB (−41; −24 dBm) and operates in a frequency range of 5.6 GHz (17.5; 23 GHz). This BIST circuit gives new perspectives in terms of test strategy, cost reduction, and measurement accuracy for microwave-integrated circuits and could be adapted for mm-wave circuits.

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Filippov, Ivan, Nikolay Duchenko, and Yuri Gimpilevich. "Particularities of complex-functional monolithic integrated circuits post-layout simulation." ITM Web of Conferences 30 (2019): 01003. http://dx.doi.org/10.1051/itmconf/20193001003.

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This paper presents a silicon-based complex-functional monolithic microwave integrated circuits (MMICs) design methodology. Post-layout simulation stage particularities are discussed. Pre-tapeout functionality verification results of the C-band phase and amplitude control MMIC based on 0.18 μm SiGe BiCMOS technology are also presented.

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Friedman, D. J., M. Meghelli, B. D. Parker, J. Yang, H. A. Ainspan, A. V. Rylyakov, Y. H. Kwark, et al. "SiGe BiCMOS integrated circuits for high-speed serial communication links." IBM Journal of Research and Development 47, no. 2.3 (March 2003): 259–82. http://dx.doi.org/10.1147/rd.472.0259.

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FRITZ, KARL E., BARBARA A. RANDALL, GREGG J. FOKKEN, MICHAEL J. DEGERSTROM, MICHAEL J. LORSUNG, JASON F. PRAIRIE, ERIC L. H. AMUNDSEN, et al. "HIGH-SPEED, LOW-POWER DIGITAL AND ANALOG CIRCUITS IMPLEMENTED IN IBM SiGe BiCMOS TECHNOLOGY." International Journal of High Speed Electronics and Systems 13, no. 01 (March 2003): 221–37. http://dx.doi.org/10.1142/s0129156403001582.

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Under the auspices of Defense Advanced Research Project Agency's Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, the Mayo Foundation Special Purpose Processor Development Group is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being studied include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation to support such military systems is the IBM Corporation silicon germanium (SiGe) BiCMOS process. In this paper, design methodology, simulations and test results from demonstration circuits developed for these applications and implemented in the IBM SiGe BiCMOS 5HP (50 GHz fT HBTs with 0.5 μm CMOS) and 7HP (120 GHz fT HBTs with 0.18 μm CMOS) technologies will be presented.

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Fujishima, Minoru. "Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits." Photonics 5, no. 4 (November 23, 2018): 50. http://dx.doi.org/10.3390/photonics5040050.

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In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention based on the expectation that an unallocated frequency band exceeding 275 GHz can be used for communication in the future. Research into wireless transceivers using BiCMOS integrated circuits with silicon germanium transistors and advanced miniaturized CMOS integrated circuits has increased in this 300 GHz band. In this paper, we will outline the terahertz communication technology using silicon integrated circuits available from mass production, and discuss its applications and future.

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Lee, Chan-Soo, Young-Jin Oh, Kee-Yeol Na, Yeong-Seuk Kim, and Nam-Soo Kim. "Integrated BiCMOS Control Circuits for High-Performance DC–DC Boost Converter." IEEE Transactions on Power Electronics 28, no. 5 (May 2013): 2596–603. http://dx.doi.org/10.1109/tpel.2012.2217156.

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Klatser, Paul, Marc Van Der Vossen, Gerard Voshaar, Rinus Boot, Adriaan Hulzinga, Maikel Iven, and Chris Roeloffzen. "An ultra flat phased array Ku-band antenna with integrated receivers in SiGe BiCMOS." International Journal of Microwave and Wireless Technologies 7, no. 3-4 (June 2015): 379–89. http://dx.doi.org/10.1017/s1759078715000999.

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A highly integrated Ku-band (10.7–12.75 GHz) planar phased array receiver of 64 antenna elements is presented. It features instantaneous reception of the full Ku-band (2.05 GHz wide) in two orthogonal polarizations with wide scan angles by using time delay instead of phase shift. The receiver is part of a system for satellite broadcast TV reception on board of moving vehicles. Two SiGe radio frequency integrated circuits (RFICs) were developed, packaged in ceramic BGAs and assembled onto a 15-layer printed circuit board (PCB) which integrates the antenna elements. An outline of the system is given along with a detailed description. It sets a new standard in integration density. The receiver has extensive analog signal processing at intermediate frequency (IF)-level. A novel bipolar implementation for true time delay is proposed, with a continuous programmable delay range of 0…80 ps with less than 2.5 ps group-delay variation in 2 GHz bandwidth (BW). The wide BW calls for a constant group-delay implementation in the IF chain. The receiver (RFIC) consumes only 132 mW per channel. Each channel has 40 dB gain.

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Dissertations / Theses on the topic "BiCMOS integrated circuits"

1

Eckhardt, James P. "An investigation of high-performance logic circuitry in BiCMOS." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/15759.

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2

Varelas, Theodoros Carleton University Dissertation Engineering Electrical. "A monolithic BiCMOS power amplifier for low power digital radio transmitter." Ottawa, 1992.

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Subramanian, Viswanathan. "Enabling techniques for Si integrated transceiver circuits." Berlin mbv, 2009. http://d-nb.info/998051705/04.

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Ting, Goodwin. "An integrated BiCMOS driver chip for medium power applications /." Online version of thesis, 1991. http://hdl.handle.net/1850/11291.

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Narayanan, Prakash. "Analytical modeling and simulation of bicmos for VLSI circuits." Thesis, Virginia Tech, 1990. http://hdl.handle.net/10919/42199.

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Interest in BiCMOS technology has been generated recently due to the potential advantages this technology offers over conventional CMOS which enjoys widespread use in today’s semiconductor industry. However, before BiCMOS can be readily adopted by the VLSI community, an understanding of the design issues and tradeoffs involved when utilizing it, must be achieved. The principal focus of this research is to move towards such an understanding through the means of analytical modeling and circuit simulation using PSPICE [1]. The device chosen for the modeling approach is the basic BiCMOS Inverting Buffer Driver. The model yields equations that characterize output rise and fall transients and quantify the delays incurred therein. At the end of the analysis, we have a composite set of delay equations that are a measure of the total gate delay and reflect the importance of individual device and circuit parameters in determining this delay. Further investigations conducted to determine the influence of device, circuit and process parameters on BiCMOS, indicate that this technology is far more resilient to variations in such parameters than CMOS. At the end of this research, we are able to make a definitive judgement about BiCMOS performance and its superiority over CMOS in the switching speed domain.
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6

Leite, Bernardo. "Design and modeling of mm-wave integrated transformers in CMOS and BiCMOS technologies." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2011. http://tel.archives-ouvertes.fr/tel-00667744.

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Les systèmes de communication sans fil en fréquences millimétriques ont gagné considérablement en importance au cours des dernières années. Des applications comme les réseaux WLAN et WPAN à 60 GHz, le radar automobile autour de 80 GHz ou l'imagerie à 94 GHz sont apparues, demandant un effort conséquent pour la conception des circuits intégrés émetteurs et récepteurs sur silicium. Dans ce contexte, les transformateurs intégrés sont particulièrement intéressants. Ils peuvent réaliser des fonctions comme l'adaptation d'impédance, la conversion du mode asymétrique au différentiel et la combinaison de puissance. La conception et la modélisation de ce type de transformateur font le sujet de cette thèse. Une étude détaillée des topologies de transformateurs est présentée, concernant le dessin des inductances, leur position relative, leurs dimensions géométriques, le blindage du substrat et l'obtention de rapports importants de transformation. Leur modélisation par des simulations électromagnétiques et par un circuit électrique à éléments discrets est également discutée. Le modèle présente une topologie 2-π et une série d'équations analytiques dépendant de ses caractéristiques technologiques et géométriques pour évaluer tous ses composants. Un très bon accord entre les simulations et les mesures est observé pour des transformateurs en technologies CMOS 65 nm et BiCMOS 130 nm jusqu'à 110 GHz. Finalement, les transformateurs sont appliqués à la conception d'un mélangeur BiCMOS à 77 GHz et un amplificateur de puissance CMOS à 60 GHz.

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7

Pickles, Neil S. (Neil Stuart) Carleton University Dissertation Engineering Electrical. "Design, modeling, and optimization of ECL interface circuits for BiCMOS integrated systems." Ottawa, 1993.

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8

Severino, Raffaele Roberto. "Design methodology for millimeter wave integrated circuits : application to SiGe BiCMOS LNAs." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14284/document.

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Grace aux récents développements des technologies d’intégration, il est aujourd’hui possible d’envisager la réalisation de circuits et systèmes intégrés sur Silicium fonctionnant à des fréquences auparavant inatteignables. Par conséquence, depuis quelques années, on assiste à la naissance de nouvelles applications en bande millimétrique, comme la communication sans fil à haut-débit à 60GHz, les radars automobiles à 76-77 et 79-82GHz, et l’imagerie millimétrique à 94GHz.Cette thèse vise, en premier lieu, à la définition d’une méthodologie de conception des circuits intégrés en bande millimétrique. Elle est par la suite validée au travers de son application à la conception des amplificateurs faible-bruit en technologie BiCMOS SiGe. Dans ce contexte, une attention particulière a été portée au développement d’une stratégie de conception et de modélisation des inductances localisées. Plusieurs exemples d’amplificateurs faible-bruit ont été réalisés, à un ou deux étages, employant des composants inductifs localisés ou distribués, à 60, 80 et 94 GHz. Tous ces circuits présentent des caractéristiques au niveau de l’état de l’art dans le domaine, ainsi en confirmant l’exactitude de la méthodologie de conception et son efficacité sur toute la planche de fréquence considérée. En outre, la réalisation d’un récepteur intégré pour applications automobiles à 80GHz est aussi décrite comme exemple d’une possible application système, ainsi que la co-intégration d’un amplificateur faible-bruit avec une antenne patch millimétrique intégrée sur Silicium
The interest towards millimeter waves has rapidly grown up during the last few years, leading to the development of a large number of potential applications in the millimeter wave band, such as WPANs and high data rate wireless communications at 60GHz, short and long range radar at 77-79GHz, and imaging systems at 94GHz.Furthermore, the high frequency performances of silicon active devices (bipolar and CMOS) have dramatically increased featuring both fT and fmax close or even higher than 200GHz. As a consequence, modern silicon technologies can now address the demand of low-cost and high-volume production of systems and circuits operating within the millimeter wave range. Nevertheless, millimeter wave design still requires special techniques and methodologies to overcome a large number of constraints which appear along with the augmentation of the operative frequency.The aim of this thesis is to define a design methodology for integrated circuits operating at millimeter wave and to provide an experimental validation of the methodology, as exhaustive as possible, focusing on the design of low noise amplifiers (LNAs) as a case of study.Several examples of LNAs, operating at 60, 80, and 94 GHz, have been realized. All the tested circuits exhibit performances in the state of art. In particular, a good agreement between measured data and post-layout simulations has been repeatedly observed, demonstrating the exactitude of the proposed design methodology and its reliability over the entire millimeter wave spectrum. A particular attention has been addressed to the implementation of inductors as lumped devices and – in order to evaluate the benefits of the lumped design – two versions of a single-stage 80GHz LNA have been realized using, respectively, distributed transmission lines and lumped inductors. The direct comparison of these circuits has proved that the two design approaches have the same potentialities. As a matter of fact, design based on lumped inductors instead of distributed elements is to be preferred, since it has the valuable advantage of a significant reduction of the circuit dimensions.Finally, the design of an 80GHz front-end and the co-integration of a LNA with an integrated antenna are also considered, opening the way to the implementation a fully integrated receiver

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9

Long, John R. (John Robert) Carleton University Dissertation Engineering Electrical. "High frequency integrated circuit design in BICMOS for monolithic timing recovery." Ottawa, 1992.

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10

Hirschman, Karl D. "Process development of an analog/digital mixed-mode BiCMOS system at RIT /." Online version of thesis, 1992. http://hdl.handle.net/1850/11238.

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Books on the topic "BiCMOS integrated circuits"

1

A, Bellaouar, and Elmasry Mohamed I. 1943-, eds. Digital BiCMOS integrated circuit design. Boston: Kluwer Academic, 1993.

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2

Klar, Heinrich. Integrierte digitale Schaltungen MOS/BICMOS. 2nd ed. Berlin: Springer, 1996.

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3

P, Galipeau Denis, ed. Analog BiCMOS design: Practices and pitfalls. Boca Raton, Fla: CRC Press, 2000.

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4

BiCMOS/CMOS systems design. New York: McGraw-Hill, 1991.

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5

Bipolar/BiCMOS Circuits and Technology Meeting (1993). Proceedings of the 1993 Bipolar/BiCMOS Circuits and Technology Meeting. New York, NY: Institute of Electrical and Electronics Engineers, 1993.

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6

Yeo, Kiat Seng. CMOS/BiCMOS ULSI: Low voltage, low power. Upper Saddle River, NJ: Prentice Hall PTR, 2002.

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7

1948-, Maejima Hideo, ed. High-performance BiCMOS technology and its applications to VLSIs. New York: Gordon and Breach Science Publishers, 1990.

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Bipolar/BiCMOS Circuits and Technology Meeting (1994 Minneapolis, Minn.). Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting. Piscataway, NJ: IEEE Order Dept., 1994.

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9

Bipolar/BiCMOS, Circuits and Technology Meeting (1992 Minneapolis Minn ). Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting. New York, NY: IEEE, 1992.

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10

Langen, Klaas-Jan de. Compact low-voltage and high-speed CMOS, BiCMOS, and bipolar operational amplifiers. Boston, MA: Kluwer Academic Publishers, 1999.

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Book chapters on the topic "BiCMOS integrated circuits"

1

Embabi, Sherif H. K., Abdellatif Bellaouar, and Mohamed I. Elmasry. "BiCMOS Digital Integrated Circuits." In Digital BiCMOS Integrated Circuit Design, 251–327. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3174-6_7.

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Embabi, Sherif H. K., Abdellatif Bellaouar, and Mohamed I. Elmasry. "MOS Digital Integrated Circuits." In Digital BiCMOS Integrated Circuit Design, 145–206. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3174-6_5.

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Embabi, Sherif H. K., Abdellatif Bellaouar, and Mohamed I. Elmasry. "Bipolar CML Integrated Circuits." In Digital BiCMOS Integrated Circuit Design, 207–50. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3174-6_6.

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del Rio, David, Ainhoa Rezola, Juan F. Sevillano, Igone Velez, and Roc Berenguer. "Design Methodology for BiCMOS Millimeter-Wave Integrated Circuits." In Analog Circuits and Signal Processing, 117–33. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93281-1_5.

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Tournier, Éric. "5.4GHz, 0.35μm BiCMOS FBAR-Based Single-Ended and Balanced Oscillators in Above-IC Technology." In Integrated Circuits and Systems, 155–86. Boston, MA: Springer US, 2012. http://dx.doi.org/10.1007/978-1-4419-8798-3_6.

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Tomas, J., E. Ragbi, P. Fouillat, and J. P. Dom. "Fast Prototyping for BiCMOS Analog Integrated Circuits Design." In Microelectronics Education, 165–68. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5110-8_39.

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Willingham, Scott D., and Ken Martin. "Precision High-Frequency Continuous-Time Integrator Circuits in BiCMOS." In Integrated Video-Frequency Continuous-Time Filters, 141–208. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2347-5_5.

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del Rio, David, Ainhoa Rezola, Juan F. Sevillano, Igone Velez, and Roc Berenguer. "A Fully Integrated and Digitally Assisted BiCMOS Transmitter for a 10-Gbps Wireless Link in the E-Band." In Analog Circuits and Signal Processing, 231–49. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93281-1_9.

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Dehollain, Catherine, Norbert Joehl, Michel Declercq, Patrick Favre, Philippe Deval, and Alexandre Vouilloz. "A Low Power Bicmos 1 GHZ Super-Regenerative Transceiver for ISM Applications." In Low-Power Design Techniques and CAD Tools for Analog and RF Integrated Circuits, 193–213. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/0-306-48089-1_9.

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Cui, Qiang, Juin J. Liou, Jean-Jacques Hajjar, Javier Salcedo, Yuanzhong Zhou, and Srivatsan Parthasarathy. "Design of SiGe SCR Devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process." In On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits, 23–42. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-10819-3_3.

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Conference papers on the topic "BiCMOS integrated circuits"

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Dunn, J., D. Harame, A. Joseph, S. St. Onge, N. Feilchenfeld, L. Lanzerotti, B. Orner, et al. "SiGe BiCMOS Trends ¿Today and Tomorrow." In IEEE Custom Integrated Circuits Conference 2006. IEEE, 2006. http://dx.doi.org/10.1109/cicc.2006.320882.

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Yoon, Jangsup, Robert Fox, and William Eisenstadt. "Integrated BiCMOS 10 GHz S-Parameter Module." In 2006 Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2006. http://dx.doi.org/10.1109/bipol.2006.311127.

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Ducati, F., A. Mazzanti, M. Borgarino, and M. Pifferi. "SiGe BiCMOS X-Band integrated radiometer." In 2008 15th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2008). IEEE, 2008. http://dx.doi.org/10.1109/icecs.2008.4675088.

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Gustat, Hans, Ulrich Jagdhold, Frank Winkler, Markus Appel, and Gerald Kell. "Differential ECL/CML Synthesis for SiGe BiCMOS." In 2008 IEEE Compound Semiconductor Integrated Circuits Symposium (CSICS). IEEE, 2008. http://dx.doi.org/10.1109/csics.2008.55.

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Garcia, Patrice, Alain Chantre, Sebastien Pruvost, Pascal Chevalier, Sean T. Nicolson, David Roy, Sorin P. Voinigescu, and Christophe Garnier. "Will BiCMOS stay competitive for mmW applications ?" In 2008 IEEE Custom Integrated Circuits Conference - CICC 2008. IEEE, 2008. http://dx.doi.org/10.1109/cicc.2008.4672102.

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Sadhu, B., J. F. Bulzacchelli, and A. Valdes-Garcia. "A 28GHz SiGe BiCMOS phase invariant VGA." In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2016. http://dx.doi.org/10.1109/rfic.2016.7508273.

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Choi, Woo-Young, Myung-Jae Lee, and Jin-Sung Youn. "Si integrated photoreceivers." In 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM. IEEE, 2010. http://dx.doi.org/10.1109/bipol.2010.5667948.

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Kinget, Peter R. "Ultra-low Voltage Analog Integrated Circuits for nanoscale CMOS." In 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2007. http://dx.doi.org/10.1109/bipol.2007.4351856.

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Jain, Vipul, Babak Javid, and Payam Heydari. "A 24/77GHz dual-band BiCMOS frequency synthesizer." In 2008 IEEE Custom Integrated Circuits Conference - CICC 2008. IEEE, 2008. http://dx.doi.org/10.1109/cicc.2008.4672127.

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Giraudin, J. c., F. Badets, J. p. Blanc, E. Chataigner, A. Bajolet, T. Jagueneau, C. Rossato, and P. Delpech. "Demonstration of three-dimensional 35nF/mm2 MIM Capacitor integrated in BiCMOS Circuits." In 2006 Bipolar/BiCMOS Circuits and Technology Meeting. IEEE, 2006. http://dx.doi.org/10.1109/bipol.2006.311152.

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