Relevant bibliographies by topics / Bipolar junction transistor

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Bipolar junction transistor'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Bipolar junction transistor"

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Elamin, Abdenabi Ali, and Waell H. Alawad. "Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )." Journal of The Faculty of Science and Technology, no. 6 (January 12, 2021): 1–9. http://dx.doi.org/10.52981/jfst.vi6.597.

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This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result showed that, the saturation voltage VCE(sat) of Bipolar Junction Transistor decreased because of the gain degradation of the transistor and increased silicon resistivity, Another parameter of a bipolar junction transistor affected by ionizing radiation is a collector-base leakage current, a strong increase of the current is caused by the build-up charge near the junction.
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Maftunzada, S. A. L. "The Structure and Working Principle of a Bipolar Junction Transistor (BJT)." Physical Science International Journal 26, no. 11-12 (December 31, 2022): 35–39. http://dx.doi.org/10.9734/psij/2022/v26i11-12772.

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We studied bipolar junction transistors. We will see that the bipolar junction transistor, often referred to by its short name, transistor, actually functions as a current-controlled current source. We will also see that in the current generation of bipolar junction transistors, both majority and minority carriers are involved. For this reason, they gave this name to this type of transistor. In order to get enough information about this part, in the first two parts we will examine the construction and working method of the transistor. After that, we dedicate sections to how the transistor is placed in different combinations and the characteristics of the transistor in each combination.
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Rajabi, Mehran, Mina Amirmazlaghani, and Farshid Raissi. "Graphene-Based Bipolar Junction Transistor." ECS Journal of Solid State Science and Technology 10, no. 11 (November 1, 2021): 111004. http://dx.doi.org/10.1149/2162-8777/ac3551.

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Graphene was considered likely to revolutionize the electronics industry. This expectation has not yet been fulfilled, mainly due to the non-ideal characteristics of graphene-based transistors. Here, we propose a novel graphene-based structure as a graphene-based bipolar junction transistor (G-BJT), a nanoscale transistor which has the ideal characteristics of the common BJT transistor. In this device, N-P-N regions are formed in the graphene channel by applying voltages to the three gates. The carrier concentrations, energy band diagrams, and current-voltage curves are measured and presented. The base-emitter junction shows a rectifying behavior with the ideality factor in the range of (2.8–3.2), the built-in potential of 0.38V, and the saturation current of 10−12 A. The G-BJT provides a minimum current gain of 20 at the base-width of 10 nm, a feature that cannot be easily obtained in Si-based BJTs. Interestingly, the current gain(β) can be controlled by the gate voltages in G-BJT and changes by 26.5% compared to the maximum value, which leads to the controllability of this proposed transistor. Identical BJT behavior, scalability down to nanometer range, large carrier mobility, along the controllable current gain of G-BJT make this transistor a good candidate for the next generation of the nanoelectronics industry.
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Gerding, M., T. Musch, and B. Schiek. "Generation of short electrical pulses based on bipolar transistorsny." Advances in Radio Science 2 (May 27, 2005): 7–12. http://dx.doi.org/10.5194/ars-2-7-2004.

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Abstract. A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7V at 50Ω. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become forward biased. The resulting fast switch-off edge of the transistor’s output signal is the basis for the pulse generation. The fast switching of the transistor occurs as a result of the minority carriers that have been injected and stored across the base-collector junction under forward bias conditions. If the saturated transistor is suddenly reverse biased the pn-junction will appear as a low impedance until the stored charge is depleted. Then the impedance will suddenly increase to its normal high value and the flow of current through the junction will turn to zero, abruptly. A differentiation of the output signal of the transistor results in two short pulses with opposite polarities. The differentiating circuit is implemented by a transmission line network, which mainly acts as a high pass filter. Both the transistor technology (pnp or npn) and the phase of the transfer function of the differentating circuit influence the polarity of the output pulses. The pulse duration depends on the transistor parameters as well as on the transfer function of the pulse shaping network. This way of generating short electrical pulses is a new alternative for conventional comb generators based on steprecovery diodes (SRD). Due to the three-terminal structure of the transistor the isolation problem between the input and the output signal of the transistor network is drastically simplified. Furthermore the transistor is an active element in contrast to a SRD, so that its current gain can be used to minimize the power of the driving signal.
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Knyaginin, D. A., E. A. Kulchenkov, S. B. Rybalka, and A. A. Demidov. "Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012057. http://dx.doi.org/10.1088/1742-6596/2086/1/012057.

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Abstract In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.
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Lenahan, Patrick M., N. T. Pfeiffenberger, T. G. Pribicko, and Aivars J. Lelis. "Identification of Deep Level Defects in SiC Bipolar Junction Transistors." Materials Science Forum 527-529 (October 2006): 567–70. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.567.

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In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.
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Doja, M. N., Moinuddin, and Umesh Kumar. "High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors." Active and Passive Electronic Components 22, no. 1 (1999): 51–73. http://dx.doi.org/10.1155/1999/58424.

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This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction Transistor operated at high speed in the sinusoidal small signal and the transient region of operations. The package uses a high frequency model non-linear circuit elements for accurate analysis. The package also uses transistor's lumped circuit model to calculate devices electrical parameters, and it also does dynamic simulation. It also includes the conventional model as a special case. Model verification has also been done by simulation.
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Raissi, F. "Josephson Fluxonic Bipolar Junction Transistor." IEEE Transactions on Appiled Superconductivity 14, no. 1 (March 2004): 87–93. http://dx.doi.org/10.1109/tasc.2004.824337.

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Perkasa, Dedy Bagus, Trias Andromeda, and Munawar A. Riyadi. "PERANCANGAN PERANGKAT KERAS ALAT UJI BIPOLAR JUNCTION TRANSISTOR BERBASIS MIKROKONTROLER." Transmisi 21, no. 1 (April 22, 2019): 19. http://dx.doi.org/10.14710/transmisi.21.1.19-24.

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Transistor bipolar merupakan piranti elektronika yang banyak digunakan dalam teknologi elektronika. Salah satu penggunaan transistor adalah sebagai amplifier audio. Pada rangkaian digital transistor digunakan sebagai saklar berkecepatan tinggi. Agar transistor bekerja dengan optimal, pemasangan transistor dalam rangkaian harus benar. Untuk itu, posisi kaki-kaki pin transistor dan nilai parameter yang ada pada transistor perlu diperhatikan. Alat bantu atau tester yang handal diperlukan untuk mengetahui letak pin pada transistor. Penelitian ini merancang suatu perangkat keras yang dapat digunakan untuk membaca jenis, letak kaki, nilai penguatan, dan tegangan maju transistor BJT (Bipolar Junction Transistor). Perangkat keras ini dirancang menggunakan mikrokontroller dan resistor untuk analisis titik kerja transistor. Pengujian dilakukan dengan menguji beberapa transistor BJT dengan tipe yang berbeda-beda. Hasil pengujian menunjukkan bahwa perangkat telah dapat bekerja dengan baik.
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Wu, Hongjun, Bangzheng Yin, and Zetao Chen. "Cross-platform Simulation of Bipolar Junction Transistor Electrical Principle." Journal of Physics: Conference Series 2068, no. 1 (October 1, 2021): 012035. http://dx.doi.org/10.1088/1742-6596/2068/1/012035.

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Abstract This paper designs a set of simulation method about bipolar junction transistor (short for ‘BJT’) electrical principle, which can be used as the foundation of cross-platform simulation of semiconductor electronic technology. Firstly, a mathematical model is established to simulate the amplification effect of bipolar junction transistor current control, the influence of Base current and Collector-Emitter Voltage on the working area of bipolar junction transistor. Secondly, interactive multimedia such as graphics, images and animation are used for simulation presentation through cross-platform software design method which is the mainstream internet web page interaction technology. Finally, a logic structure of the whole simulation software is designed, which presents data transmission, control workflow, relationship between each class and each layer in the simulation software.
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Dissertations / Theses on the topic "Bipolar junction transistor"

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Adachi, Kazuhiro. "Simulation and modelling of power devices based on 4H silicon carbide." Thesis, University of Newcastle Upon Tyne, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.273406.

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Lee, Hyung-Seok. "High power bipolar junction transistors in silicon carbide." Licentiate thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3854.

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Gallagher, Jeanne M. B. "A monolithic bipolar junction transistor amplifier in the common emitter configuration." Honors in the Major Thesis, University of Central Florida, 1992. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/98.

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This item is only available in print in the UCF Libraries. If this is your Honors Thesis, you can help us make it available online for use by researchers around the world by following the instructions on the distribution consent form at http://library.ucf.edu/Systems/DigitalInitiatives/DigitalCollections/InternetDistributionConsentAgreementForm.pdf You may also contact the project coordinator, Kerri Bottorff, at kerri.bottorff@ucf.edu for more information.
Bachelors
Engineering
Electrical Engineering
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SILVA, Malana Marcelina Almeida da. "Caracterização de transistor bipolar de Junção para medição em feixes de radioterapia." Universidade Federal de Pernambuco, 2016. https://repositorio.ufpe.br/handle/123456789/18420.

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Capes
Transistores bipolares de junção - TBJ possuem uma característica inerente à sua construção física que é o fator de amplificação do sinal produzido, ou seja, amplificação da corrente. Fótons de megavoltagem, ao interagirem com o material semicondutor são capazes de produzir o que é chamado de fotocorrente, ao mesmo tempo em que provocam danos na estrutura cristalina do transistor. O objetivo desta dissertação foi caracterizar o TBJ do tipo BC846 para feixes de fótons de megavoltagem com a finalidade de entender o comportamento deste dispositivo para que futuramente seja desenvolvido um novo método dosimétrico visando complementar os métodos já existentes. O estudo concerniu em caracterizar um TBJ para se analisar como tal dispositivo eletrônico pode ser utilizado como detector de radiação no modo ativo, isto é, em mensurar em tempo real a dose, taxa de dose, dependência energética, e os efeitos direcional e de tamanho de campo de irradiação. Os experimentos foram realizados utilizando um simulador de placas de água sólida com o transistor posicionado no eixo central do feixe em uma profundidade de 5 cm, tamanho de campo padrão, 10 x 10 cm², e uma distância fonte-superfície de 100 cm. Os resultados mostram que o TBJ pode funcionar como detector em feixes de radioterapia desde que seja obedecido certos critérios técnicos relacionados ao comportamento elétrico do dispositivo antes e durante a irradiação. Uma perda percentual média de ±3% na sensibilidade do dispositivo foi registrada após cada irradiação. Essa variação guarda uma proporcionalidade com a dose absorvida e foi encontrada resposta semelhante mesmo com transistores que possuem diferentes fatores de amplificação da corrente.
Bipolar Junction Transistor - BJT have a characteristic inherent to their physical construction, which is the amplification factor of the produced signal, i.e., current amplification. Megavoltage photons interacting with the semiconductor material are capable of producing what is called photocurrent, while causing damage to the crystalline structure of the transistor. The aim of this work was to characterize the BJT type BC846 for MV photon beams in order to understand the behavior of this mechanism to be developed in the future a new dosimetric method to complement existing methods. The study's concerned characterization of a BJT to be analyzed as such electronic device may be used as a radiation detector in the active mode, i.e., measuring in real time the dose, dose rate, energy dependence, and directional effects and size radiation field. The experiments were performed using a solid water phantom with the transistor positioned at the central axis of the beam at a depth of 5 cm, standard field size, 10 x 10 cm², and a source-surface distance of 100 cm. The results show that the BJT may function as a detector in radiotherapy beam since certain technical criteria are met related to the electrical behavior of the device before and during the irradiation. An average percentage loss of ± 3% in the device sensitivity was recorded after each irradiation. This variation is in proportion to the dose absorbed and one can see similar response even with transistors having different amplification factors of the current.
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Schaeffer, Daniel Dale. "Very High Frequency Bipolar Junction Transistor Frequency Multiplier Drive Network Design and Analysis." PDXScholar, 2019. https://pdxscholar.library.pdx.edu/open_access_etds/5031.

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The function of a frequency multiplier is verbatim -- a frequency multiplier is a circuit that takes a signal of particular frequency at the input and produces harmonic multiples of the input signal's frequency at the output. Their use is widespread throughout history, primarily in the application of frequency synthesis. When implemented as a part of a large system, a chain of multipliers can be used to synthesize multiple reference signals from a single high-performance reference oscillator. Frequency multiplier designs use a variety of nonlinear devices and topologies to achieve excitation of harmonics. This thesis will focus on the design and analysis of single ended bipolar junction transistor frequency multipliers. This topology serves as a relatively simple design that lends itself to analysis of device parasitics and nonlinearities. In addition, design is done in the Very High Frequency (VHF) band of 30-300 MHz to allow for design and measurement freedoms. However, the design methodologies and theory can be frequency scaled as needed. The parasitics and nonlinearities of frequency multipliers are well explored on the output side of circuit design, but literature is lacking in analysis of the drive network. In order to explore device nonlinearities on the drive side of the circuit, this thesis implements novel nonlinear reflectometry systems in both simulations and real-world testing. The simulation nonlinear reflectometry consists of intelligently configured voltage sources, whereas directional couplers allow for real world nonlinear reflectometry measurements. These measurements allow for harmonically rich reflected waveforms to be accurately measured, allowing for waveform engineering to be performed at the drive network. Further, nonlinear reflectometry measurements can be used to explain how load- and source-pull obtained drive and load terminations are able to achieve performance increases.
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Okuda, Takafumi. "Enhancement of Carrier Lifetimes in SiC and Fabrication of Bipolar Junction Transistors." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/202717.

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Yu, Chi Sun. "Effectiveness of parallel diode linearizers on bipolar junction transistor and its use in dynamic linearization /." access full-text access abstract and table of contents, 2009. http://libweb.cityu.edu.hk/cgi-bin/ezdb/thesis.pl?phd-ee-b23749362f.pdf.

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Thesis (Ph.D.)--City University of Hong Kong, 2009.
"Submitted to Department of Electronic Engineering in partial fulfillment of the requirements for the degree of Doctor of Philosophy." Includes bibliographical references (leaves 129-134)
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Rodriguez, Luis. "Design of a Monolithic Bipolar Junction Transistor Amplifier in the Common Emitter with Cascaded Common Collector Configuration." Honors in the Major Thesis, University of Central Florida, 2004. http://digital.library.ucf.edu/cdm/ref/collection/ETH/id/724.

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This item is only available in print in the UCF Libraries. If this is your Honors Thesis, you can help us make it available online for use by researchers around the world by following the instructions on the distribution consent form at http://library.ucf
Bachelors
Engineering and Computer Science
Electrical Engineering
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Dias, Pedro Carvalhaes 1983. "Um novo sensor de umidade de solo de pulso de calor de alta sensibilidade, baseado em um único transistor bipolar de junção npn = A novel high sensitivity single probe heat pulse soil moisture sensor based on a single npn bipolar junction transistor = A novel high sensitivity single probe heat pulse soil moisture sensor based on a single npn bipolar junction transistor." [s.n.], 2012. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261867.

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Orientador: Elnatan Chagas Ferreira
Texto em inglês
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação
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Resumo: A constante preocupação em aumentar a produtividade das plantações de uma forma sustentável e otimizando o uso dos insumos agrícolas (água, fertilizantes, pesticidas e produtos para correção do PH) levou ao desenvolvimento da agricultura de precisão, que permite determinar a quantidade correta de insumos para cada região do solo (tipicamente um hectare), evitando o desperdício. Sensores de umidade de solo de baixo custo e fácil aplicação no campo são fundamentais para permitir um controle preciso da atividade de irrigação, sendo que os sensores que melhor atendem estes requisitos são os chamados sensores de dissipação de calor ou sensores de transferência de calor. Estes sensores, entretanto, apresentam um problema de baixa sensibilidade na faixa de umidade mais importante para as plantas (umidade de solo 'teta'v variando entre 5% e 35%), pois, para cobrir esta variação de 30% em 'teta'v com resolução de 1%, é necessário medir variações de temperatura de aproximadamente 0,026 ºC nos sensores de pulso de calor a duas pontas e 0,05 ºC para os sensores de pulso de calor de ponta simples. Neste trabalho foi desenvolvido um novo sensor de umidade de solo do tipo pulso de calor de ponta simples, baseado em um único elemento: um transistor bipolar de junção npn, que é usado tanto como aquecedor e como sensor de temperatura de alta precisão. Resultados experimentais, obtidos em medidas realizadas através de uma técnica de interrogação especialmente desenvolvida para este novo sensor mostram que neste trabalho foi possível obter uma sensibilidade cerca de uma ordem de grandeza maior do que nos sensores de pulso de calor com uma ponta e cerca de 20 vezes maior do que nos sensores de pulso de calor de duas pontas. Outra vantagem da técnica desenvolvida é que o aumento da sensibilidade não é obtido às custas do aumento da corrente drenada da bateria para aquecer o sensor. No sensor desenvolvido é utilizada uma corrente de apenas 6 mA para gerar o aquecimento (com energia dissipada de 1,5 J), enquanto que que os sensores de pulso de calor com ponta simples requerem cerca de 50 mA (com 2,4 J de energia dissipada) para operar. Os sensores de pulso de calor de ponta dupla também são fabricados com resistores que requerem cerca de 50 mA para o aquecimento (0.8 J de energia dissipada) para operar corretamente
Abstract: The concern regarding sustainable development and crop inputs optimization (such as water, fertilizers, pesticides and soil PH correction products) has led to the development of the precision agriculture concept, that allows to determine the exact amount of each input required on each ground section (typically one hectare), avoiding waste of inputs. Low-cost and easily handled soil moisture sensors are very important for allowing a precise irrigation control. The class of sensors which fulfill those requirements are the heat transfer sensors, where there are basically two types of devices: dual (or multi) probe heat pulse sensors and single probe heat pulse sensors. However, these sensors have a low sensitivity in the most important range of soil humidity 'teta'v for plants (usually from 5% ? 'teta'v ? 35%). To cover this 30% soil humidity range with 1% resolution it is necessary to measure temperature with a resolution of 0,026 ºC in the dual/multi probe heat pulse sensors and 0,05 ºC in the single probe heat pulse sensor. In this work it was developed a new type of single probe heat pulse sensor, comprised of a single element: an npn junction bipolar transistor, that plays the role of both the heating element and a high accuracy temperature sensor. Experimental results, obtained through an interrogation technique especially developed for this sensor, show sensitivity about one order of magnitude greater than the typical sensitivity of the single probe heat pulse sensors and 20 times greater than dual probe heat pulse sensors. Another great advantage of the developed interrogation technique is that the increase in sensibility is not obtained through a higher current being drained from the batteries that power the sensor. The developed sensor operates at a much lower current level than the other sensors, draining only 6 mA from the battery (with an energy of 150 mW). The single probe heat pulse sensor requires 50 mA and 1.5 J of energy to operate, whilst the dual probe heat pulse sensors are manufactured with resistors which also drain 50 mA from the battery with 0.8 J of dissipated energy
Mestrado
Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
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Sandén, Martin. "Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3203.

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Books on the topic "Bipolar junction transistor"

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The bipolar junction transistor. 2nd ed. Reading, Mass: Addison-Wesley, 1989.

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SiGe, GaAs, and InP heterojunction bipolar transistors. New York: Wiley, 1999.

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Liou, Juin J. Principles and analysis of AlGaAs/GaAs heterojunction bipolar transistors. Boston: Artech House, 1996.

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Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Konstanz: Hartung-Gorre, 2002.

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Hammer, Urs. Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits. Konstanz: Hartung-Gorre, 2010.

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J, Frasca A., and United States. National Aeronautics and Space Administration., eds. Neutron and gamma irradiation effects on power semiconductor switches. [Washington, D.C.]: NASA, 1990.

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Jo, Myungsuk. Multi-regional charge-based small-signal bipolar junction transistor model. 1989.

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Neudeck, George W. Modular Series on Solid State Devices, Volume III: The Bipolar Junction Transistor (2nd Edition). Prentice Hall, 1989.

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F, Chang M., ed. Current trends in heterojunction bipolar transistors. Singapore: World Scientific, 1996.

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Wade, Thomas. Noise in Bipolar Junction Transistors at Cryogenic Temperatures. Dissertation Discovery Company, 2019.

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Book chapters on the topic "Bipolar junction transistor"

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Li, Sheng S. "Bipolar Junction Transistor." In Semiconductor Physical Electronics, 391–422. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4613-0489-0_13.

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Gift, Stephan J. G., and Brent Maundy. "Bipolar Junction Transistor." In Electronic Circuit Design and Application, 41–87. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46989-4_2.

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Gift, Stephan J. G., and Brent Maundy. "Bipolar Junction Transistor." In Electronic Circuit Design and Application, 45–96. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-79375-3_2.

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Di Natale, Corrado. "Bipolar Junction Transistor." In Introduction to Electronic Devices, 151–80. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-27196-0_6.

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Schubert, Thomas F., and Ernest M. Kim. "Bipolar Junction Transistor Characteristic." In Fundamentals of Electronics, 133–227. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-031-79873-3_3.

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Pandey, O. N. "Bipolar Junction Transistor (BJT)." In Electronics Engineering, 79–183. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-78995-4_3.

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Kolawole, Michael Olorunfunmi. "Structure of Bipolar Junction Transistor." In Electronics, 67–125. First edition. | Boca Raton, FL : CRC Press, 2020.: CRC Press, 2020. http://dx.doi.org/10.1201/9781003052913-3.

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N. Makarov, Sergey, Reinhold Ludwig, and Stephen J. Bitar. "Bipolar Junction Transistor and BJT Circuits." In Practical Electrical Engineering, 851–918. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-21173-2_17.

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Prasad, R. "Transistor Bipolar Junction (BJT) and Field-Effect (FET) Transistor." In Undergraduate Lecture Notes in Physics, 457–581. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-65129-9_6.

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Loan, Sajad A., Faisal Bashir, Asim M. Murshid, Humyra Shabir, M. Rafat, M. Nizamuddin, Abdul Rahman Alamoud, and Shuja A. Abbasi. "Charge Plasma Based Bipolar Junction Transistor on Silicon on Insulator." In Transactions on Engineering Technologies, 219–29. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-9588-3_17.

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Conference papers on the topic "Bipolar junction transistor"

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Tianbing Chen and James Ma. "Advances in bipolar junction transistor modeling." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667345.

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Belić, Milivoj R., Milan Petrović, Jörg Leonardy, and Friedemann Kaiser. "Optical Transistor Based on a Photorefractive Ring Cavity." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.ctue6.

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The invention of electronic transistors revolutionized the field of electronics. There have been many attempts to achieve transistor action in different optical circuits [1]. Photorefractive materials possess features (strong response at low power levels and parallel processing) which are convenient for realization of optical circuits that, are functionally similar to different, electronic devices [2]. We use these advantages to propose an optical transistor based on a bidirectional PR ring resonator, whose operation is functionally similar to the operation of a bipolar junction transistor.
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Yourun Zhang, Bo Zhang, Zhaoji Li, Xilin liu, and Xiaochuan Deng. "Novel structure of 4H-SiC bipolar junction transistor." In 2009 International Conference on Communications, Circuits and Systems (ICCCAS). IEEE, 2009. http://dx.doi.org/10.1109/icccas.2009.5250432.

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Johnston-Halperin, E., M. E. Flatte, and D. D. Awschalom. "Experimental demonstration of a magnetic bipolar junction transistor." In SPIE NanoScience + Engineering, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2012. http://dx.doi.org/10.1117/12.933278.

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Causevic, A., H. S. Funk, D. Schwarz, K. Guguieva, and J. Schulze. "Processing sequence for a PureB bipolar junction transistor." In 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO). IEEE, 2020. http://dx.doi.org/10.23919/mipro48935.2020.9245196.

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Bucur, Viorel, Gabriel Banarie, Stefan Marinca, and Mircea Bodea. "Reducing the Bipolar Junction Transistor Vbe Non-Linearity." In 2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems". IEEE, 2019. http://dx.doi.org/10.23919/mixdes.2019.8787201.

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Hossain, Md Mahbub. "Thermal Node Characteristics of a Bipolar Junction Transistor." In 2019 IEEE International Conference on Electro Information Technology (EIT). IEEE, 2019. http://dx.doi.org/10.1109/eit.2019.8834123.

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Shao-Yen Chiu, Wen-Shiung Lour, Jung-Hui Tsai, and Yu-Chi Kang. "High-Performance InGaP/GaAs pnp δ-Doped Heterojunction Bipolar Transistor." In 2006 International Workshop on Junction Technology. IEEE, 2006. http://dx.doi.org/10.1109/iwjt.2006.220911.

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Hériveaux, Laurent, Jessy Clédière, and Stèphanie Anceau. "Electrical Modeling of the Effect of Photoelectric Laser Fault Injection on Bulk CMOS Design." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0361.

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Abstract Fault injection from infrared laser is a common practice among Information Technology Security Evaluation Facility (ITSEF) labs for testing CMOS circuits, and obtained effects are very versatile. However, from our point of view, the details of the phenomenona that occur in the integrated circuit have yet to be investigated. The common hypothesis is that the photoelectric current created during the light stimulation flows through the P-N junctions, and corrupts voltage outputs of the cells. In this paper, we consider the vertical parasitic bipolar junction transistors inherent to CMOS bulk devices. We show that these parasitic transistors contribute to the injected fault at a higher rate than just the P-N junctions of the OFF MOS side. There are two features of such results. First, the space charge region of the N-well / P-substrate junction is wide and will induce a stronger photocurrent. Second, this current will be amplified by the parasitic bipolar transistor and thus lead to more effects. These results are obtained by electrical simulations on a CMOS inverter. The size of the laser spot is taken into account via neighboring cells that are also illuminated. To induce an effect, small spot size needs a very high-power density, which is not always achievable. Increasing the illuminated area to inject more power is then a solution; simulations illustrate this point.
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Ho, Carl N. M., River T. H. Li, and Enea Bianda. "An efficient current-source power bipolar junction transistor driver." In 2014 IEEE International Power Electronics and Application Conference and Exposition (PEAC). IEEE, 2014. http://dx.doi.org/10.1109/peac.2014.7037873.

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Reports on the topic "Bipolar junction transistor"

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Schaeffer, Daniel. Very High Frequency Bipolar Junction Transistor Frequency Multiplier Drive Network Design and Analysis. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.6907.

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Zhang, Jiahui, Petre Alexandrov, Jian H. Zhao, and Terry Burke. 1677V, 5.7 mohm.cm2 4H-SiC Bipolar Junction Transistors. Fort Belvoir, VA: Defense Technical Information Center, November 2004. http://dx.doi.org/10.21236/ada477420.

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Woywode, Oliver. Nonlinearities in the Base Emitter Junction of Heterojunction Bipolar Transistors. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.7084.

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Doyle, Barney Lee, Daniel L. Buller, Harold Paul Hjalmarson, Robert M. Fleming, Edward Salvador Bielejec, and Gyorgy Vizkelethy. Simulation of neutron displacement damage in bipolar junction transistors using high-energy heavy ion beams. Office of Scientific and Technical Information (OSTI), December 2006. http://dx.doi.org/10.2172/913228.

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Hembree, Charles E., and Perry J. Robertson. Radiation and Self Heating Effects in Hetero-Junction Bipolar Transistors: FY2019 L2 MileStone 6723 Report. Office of Scientific and Technical Information (OSTI), December 2019. http://dx.doi.org/10.2172/1592871.

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