Relevant bibliographies by topics / Bipolar junction transistor (BJT)

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Bipolar junction transistor (BJT)'

Author: Grafiati
Published: 4 June 2021
Last updated: 18 February 2022

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Journal articles on the topic "Bipolar junction transistor (BJT)"

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Elamin, Abdenabi Ali, and Waell H. Alawad. "Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )." Journal of The Faculty of Science and Technology, no. 6 (January 12, 2021): 1–9. http://dx.doi.org/10.52981/jfst.vi6.597.

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This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result sho
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Perkasa, Dedy Bagus, Trias Andromeda, and Munawar A. Riyadi. "PERANCANGAN PERANGKAT KERAS ALAT UJI BIPOLAR JUNCTION TRANSISTOR BERBASIS MIKROKONTROLER." Transmisi 21, no. 1 (2019): 19. http://dx.doi.org/10.14710/transmisi.21.1.19-24.

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Transistor bipolar merupakan piranti elektronika yang banyak digunakan dalam teknologi elektronika. Salah satu penggunaan transistor adalah sebagai amplifier audio. Pada rangkaian digital transistor digunakan sebagai saklar berkecepatan tinggi. Agar transistor bekerja dengan optimal, pemasangan transistor dalam rangkaian harus benar. Untuk itu, posisi kaki-kaki pin transistor dan nilai parameter yang ada pada transistor perlu diperhatikan. Alat bantu atau tester yang handal diperlukan untuk mengetahui letak pin pada transistor. Penelitian ini merancang suatu perangkat keras yang dapat digunaka
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Bang, Jeong-Ju, Chang-Su Huh, and Jong-Won Lee. "A Study on Destruction Characteristics of BJT (Bipolar Junction Transistor) at Different Pulse Repetition Rate." Journal of the Korean Institute of Electrical and Electronic Material Engineers 27, no. 3 (2014): 167–71. http://dx.doi.org/10.4313/jkem.2014.27.3.167.

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Zhang, Nuo, Yi Rao, Nuo Xu, Ayden Maralani, and Albert P. Pisano. "Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures." Materials Science Forum 778-780 (February 2014): 1013–16. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1013.

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In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was performed. At elevated temperatures, although the current gain of the device is reduced, the intrinsic voltage gain increases to 5900 at 673 K, suggesting 4H-SiC BJT has the potential to be used as a voltage amplifier at extremely high temperatures.
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Zhang, Qing Chun Jon, Robert Callanan, Anant K. Agarwal, et al. "10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC." Materials Science Forum 645-648 (April 2010): 1025–28. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1025.

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4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV ha
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Kusuma, Zeka Wijaya, Sunu Pradana, and Abdul Hamid Kurniawan. "Rancang Bangun Modul Praktikum Penggunaan Bipolar Junction Transistor Sebagai Sakelar Berbasis Arduino Mega." PoliGrid 1, no. 1 (2020): 14. http://dx.doi.org/10.46964/poligrid.v1i1.343.

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Abstrak- BJT (Bipolar Junction Transistor) sebagai sakelar adalah salah satu pokok bahasan pada mata kuliah elektronika daya dan membutuhkan modul praktikum sebagai media dalam proses pembelajarannya. Modul praktikum yang sudah ada relatif kompleks sehingga penulis membuat rancang bangun yang lebih sederhana sehingga mudah untuk diperbaiki saat terjadi kerusakan serta komponen penggantinya mudah untuk ditemukan. BJT dapat berfungsi sebagai sakelar dengan memanfaatkan dua modenya yaitu saturation dan cut off. Pada perancangan modul, penyakelaran dikendalikan oleh Arduino Mega dengan sinyal PWM
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David Theodore, N., Sophie Verdonckt-Vandebroek, C. Barry Carter, and S. Simon Wong. "Characterization of lateral bipolar transistor structures." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 628–29. http://dx.doi.org/10.1017/s0424820100176277.

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Semiconductor devices are being scaled down into the submicron regime in order to meet technological demands for increased device-packing densities. Other factors considered for device design include low power dissipation, noise immunity, speed and high driving capability. Of these factors, high packing densities and low power dissipation can be derived using Coinplementary-Metal-Oxide-Semiconductor (CMOS) schemes. Bipolar-Junction-Transistor (BJT) schemes on the other hand provide driving capability, low noise performance and speed, at the expense however of greater device power- consumption.
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Jumiasih, Jumiasih, Trias Andromeda, and Munawar Agus Riyadi. "PERANCANGAN PERANGKAT LUNAK ALAT UJI BIPOLAR JUNCTION TRANSISTOR BERBASIS MIKROKONTROLER." TRANSIENT 7, no. 4 (2019): 1075. http://dx.doi.org/10.14710/transient.7.4.1075-1083.

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Transistor merupakan salahsatu komponen penting dalam rangkaian elektronika. Transistor telah digunakan hampir disemua rangkaian elektronika. Namun, permasalahan sering timbul ketika ingin mengaplikasikan transistor ke dalam sebuah rangkaian elektronika, karena transistor sangat rentan terhadap kerusakan. Transistor bisa rusak karena suhu yang terlalu tinggi, kesalahan pengukuran, maupun kesalahan pemasangan dalam rangkaian. Hal ini karena cukup sulit mengetahui jenis maupun kaki-kaki dari transistor yang akan digunakan apabila tanpa panduan dari datasheet transistor tersebut. Bahkan datasheet
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Johannesson, Daniel, Muhammad Nawaz, and Hans Peter Nee. "TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors." Materials Science Forum 963 (July 2019): 670–73. http://dx.doi.org/10.4028/www.scientific.net/msf.963.670.

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In this project, a Technology CAD (TCAD) model has been calibrated and verified against experimental data of a 15 kV silicon carbide (SiC) bipolar junction transistor (BJT). The device structure of the high voltage BJT has been implemented in the Synopsys Sentaurus TCAD simulation platform and design of experiment simulations have been performed to extract and fine-tune device parameters and 4H-SiC material parameters to accurately reflect the 15 kV SiC BJT experimental results. The set of calibrated TCAD parameters may serve as a base for further investigations of various SiC device design an
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Zhang, Jian Hui, Leonid Fursin, Xue Qing Li, et al. "4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile." Materials Science Forum 615-617 (March 2009): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.829.

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This work reports 4H-SiC bipolar junction transistor (BJT) results based upon our first intentionally graded base BJT wafer with both base and emitter epi-layers continuously grown in the same reactor. The 4H-SiC BJTs were designed to improve the common emitter current gain through the built-in electrical fields originating from the grading of the base doping. Continuously-grown epi-layers are also believed to be the key to increasing carrier lifetime and high current gains. The 4H-SiC BJT wafer was grown in an Aixtron/Epigress VP508, a horizontal hot-wall chemical vapor deposition reactor usi
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Dissertations / Theses on the topic "Bipolar junction transistor (BJT)"

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Buono, Benedetto. "Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320.

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The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. However, in order to compete on the market, it is crucial to a have high current gain and a breakdown voltage close to ideal. Moreover, the absence of conductivity modulation and long-term stability has to be solved. In this thesis, these topics are investig
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Lee, Hyung-Seok. "Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, Stockholm : Kungliga Tekniska högskolan, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4623.

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Elahipanah, Hossein. "Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors." Doctoral thesis, KTH, Elektronik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-211659.

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4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. In this thesis, we focus on the improvement of the 4H-SiC BJT performance, including the device optimization and process development. To optimize the 4H-SiC BJT design, a compr
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Tolstoy, Georg. "High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters." Doctoral thesis, KTH, Elektrisk energiomvandling, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-168163.

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This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. From a system point of view the SiC power device could decrease the cost and complexity of cooling, reduce the size and weight of the system, and enable the system to endure harsher environments. The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to
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Sandén, Martin. "Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3203.

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Pejnefors, Johan. "Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3214.

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<p>This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si<sub>1-x</sub>Ge<sub>x</sub>) films for high-speed bipolar transistors.<i>In situ</i>doping of polycrystalline silicon (poly-Si)using phosphine (PH<sub>3</sub>) and disilane (Si<sub>2</sub>H<sub>6</sub>) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. The growthkinetics and P incorporation was studied for amorphous Si filmgrowth. Hydrogen (H) incorporated in the as-deposited films wasrelated to growth kinetics and the energy for
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Fernández, S. Alejandro D. "Modelling the temperature dependences of Silicon Carbide BJTs." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-202754.

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Silicon Carbide (SiC), owing to its large bandgap, has proved itself to be a very viable semiconductor material for the development of extreme temperature electronics. Moreover, its electrical properties like critical field (Ecrit) and saturation velocity (vsat) are superior as compared to the commercially abundant Silicon, thus making it a better alternative for RF and high power applications. The in-house SiC BJT process at KTH has matured a lot over the years and recently developed devices and circuits have shown to work at temperatures exceeding 500˚C. However, the functional reliability o
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Sadik, Diane-Perle. "On Reliability of SiC Power Devices in Power Electronics." Doctoral thesis, KTH, Elkraftteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-207763.

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Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1.7kV voltage range, power devices in SiC are foreseen to replace Si Insulatedgatebipolar transistors (IGBTs) for applications targeting high efficiency,high operation temperatures and/or volume reductions. In particular, theSiC Metal-oxide semiconductor field-effect transistor (MOSFET) – which isvoltage contro
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Hedayati, Raheleh. "High-Temperature Analog and Mixed-Signal Integrated Circuits in Bipolar Silicon Carbide Technology." Doctoral thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-213697.

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Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. In fact, Si-based ICs have a limited maximum operating temperature which is around 300 °C for silicon on insulator (S
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Tian, Ye. "SiC Readout IC for High Temperature Seismic Sensor System." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-213969.

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Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. Due to its wide bandgap, Silicon Carbide (SiC) is a promising candidate to implement integrated circuits (ICs) operating in such extreme environments. In this thesis, various analog and mixed-signal ICs in 4H-SiC bipolar techn
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Books on the topic "Bipolar junction transistor (BJT)"

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The bipolar junction transistor. 2nd ed. Addison-Wesley, 1989.

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Jo, Myungsuk. Multi-regional charge-based small-signal bipolar junction transistor model. 1989.

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Neudeck, George W. Modular Series on Solid State Devices, Volume III: The Bipolar Junction Transistor (2nd Edition). Prentice Hall, 1989.

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Book chapters on the topic "Bipolar junction transistor (BJT)"

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N. Makarov, Sergey, Reinhold Ludwig, and Stephen J. Bitar. "Bipolar Junction Transistor and BJT Circuits." In Practical Electrical Engineering. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-21173-2_17.

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Prasad, R. "Transistor Bipolar Junction (BJT) and Field-Effect (FET) Transistor." In Undergraduate Lecture Notes in Physics. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-65129-9_6.

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Gift, Stephan J. G., and Brent Maundy. "Bipolar Junction Transistor." In Electronic Circuit Design and Application. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46989-4_2.

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Li, Sheng S. "Bipolar Junction Transistor." In Semiconductor Physical Electronics. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4613-0489-0_13.

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Vogel, Burkhard. "Bipolar Junction Transistors (BJTs) and Noise." In Balanced Phono-Amps. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-11229-5_5.

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Kolawole, Michael Olorunfunmi. "Structure of Bipolar Junction Transistor." In Electronics. CRC Press, 2020. http://dx.doi.org/10.1201/9781003052913-3.

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Loan, Sajad A., Faisal Bashir, Asim M. Murshid, et al. "Charge Plasma Based Bipolar Junction Transistor on Silicon on Insulator." In Transactions on Engineering Technologies. Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-017-9588-3_17.

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Elsayed, Ahmed M., Hassan M. Emam, Hussein S. Ahmed, Yousof O. Moustafa, and Nihal Y. Ibrahim. "Second-Order Rectification of High-Frequency Radiation in Bipolar Junction Transistor." In Recent Advances in Engineering Mathematics and Physics. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-39847-7_12.

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Cahen, David, Leonid Chernyak, Geula Dagan, and Abraham Jakubowicz. "Ion Mobility in Chalcogenide Semiconductors; Room Temperature Creation of Bipolar Junction Transistor." In Fast Ion Transport in Solids. Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1916-0_7.

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Phipps, Eric T., Roscoe A. Bartlett, David M. Gay, and Robert J. Hoekstra. "Large-Scale Transient Sensitivity Analysis of a Radiation-Damaged Bipolar Junction Transistor via Automatic Differentiation." In Advances in Automatic Differentiation. Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-68942-3_31.

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Conference papers on the topic "Bipolar junction transistor (BJT)"

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Daranagama, Thilini, Vasantha Pathirana, Florin Udrea, and Richard McMahon. "Novel 4H-SiC bipolar junction transistor (BJT) with improved current gain." In 2015 IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC). IEEE, 2015. http://dx.doi.org/10.1109/cobep.2015.7420235.

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Hussain, Safina, Parameshwaran Gnanachchelvi, Jeffrey C. Suhling, Richard C. Jaeger, Michael C. Hamilton, and Bogdan M. Wilamowski. "The Influence of Uniaxial Normal Stress on the Performance of Vertical Bipolar Transistors." In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73233.

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In this paper, we have explored the response of bipolar junction transistors (BJT) to the controlled application of mechanical stress. Mechanical strains and stresses are developed during the fabrication, assembly and packaging of the integrated circuit (IC) chips. Due to these stresses and strains, it has been observed by many researchers that changes can occur in the electrical performance of both analog and digital devices. Stress-induced device parametric shifts affect the performance of analog circuits that depend upon precise matching of bipolar and/or MOS devices, and can cause them to
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Loh, S. K., C. Q. Chen, K. H. Yip, et al. "Advanced FIB CE Combined with Static Analysis for Functional Failure Analysis." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0424.

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Abstract It is difficult to simulate functional failures using static analysis tools, therefore, debugging and troubleshooting devices with functional failures present a special challenge for failure analysis (FA) work and often result in a root-cause success rate is quite low. In this paper, the application of advanced FIB circuit edit (CE) processes combined the static FA analysis yielded successful localization of a bipolar junction transistor (BJT) device soft failure. Additional FA techniques were incorporated within the FA flow, resulting in characterization of the electrical behavior of
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Imamoto, Takuya, and Tetsuo Endoh. "Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell." In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (Formerly known as SOI Conference). IEEE, 2013. http://dx.doi.org/10.1109/s3s.2013.6716574.

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Yuan, Heng, Bo Wang, Se-Hyuk Yeom, et al. "Novel Biosensor Based on MOSFET-BJT Hybrid Mode of Gated Lateral Bipolar Junction Transistor for C-reactive Protein Detection." In 2012 3rd International Conference on Intelligent Systems, Modelling and Simulation (ISMS). IEEE, 2012. http://dx.doi.org/10.1109/isms.2012.79.

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Tianbing Chen and James Ma. "Advances in bipolar junction transistor modeling." In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2010. http://dx.doi.org/10.1109/icsict.2010.5667345.

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Daniel, C., C. Plettner, A. Schuttauf, C. Poivey, F. Tonicello, and M. Triggianese. "Laser Pulse Tests of Bipolar Junction Transistors (BJTs) for SET Analysis." In 2014 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with NSREC 2014). IEEE, 2014. http://dx.doi.org/10.1109/redw.2014.7004576.

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Yourun Zhang, Bo Zhang, Zhaoji Li, Xilin liu, and Xiaochuan Deng. "Novel structure of 4H-SiC bipolar junction transistor." In 2009 International Conference on Communications, Circuits and Systems (ICCCAS). IEEE, 2009. http://dx.doi.org/10.1109/icccas.2009.5250432.

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Hossain, Md Mahbub. "Thermal Node Characteristics of a Bipolar Junction Transistor." In 2019 IEEE International Conference on Electro Information Technology (EIT). IEEE, 2019. http://dx.doi.org/10.1109/eit.2019.8834123.

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Causevic, A., H. S. Funk, D. Schwarz, K. Guguieva, and J. Schulze. "Processing sequence for a PureB bipolar junction transistor." In 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO). IEEE, 2020. http://dx.doi.org/10.23919/mipro48935.2020.9245196.

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Reports on the topic "Bipolar junction transistor (BJT)"

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Schaeffer, Daniel. Very High Frequency Bipolar Junction Transistor Frequency Multiplier Drive Network Design and Analysis. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.6907.

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