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Books on the topic 'Bipolar junction transistor'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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1

The bipolar junction transistor. 2nd ed. Reading, Mass: Addison-Wesley, 1989.

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2

SiGe, GaAs, and InP heterojunction bipolar transistors. New York: Wiley, 1999.

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3

Liou, Juin J. Principles and analysis of AlGaAs/GaAs heterojunction bipolar transistors. Boston: Artech House, 1996.

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4

Huber, Dieter. InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond. Konstanz: Hartung-Gorre, 2002.

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5

Hammer, Urs. Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits. Konstanz: Hartung-Gorre, 2010.

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6

J, Frasca A., and United States. National Aeronautics and Space Administration., eds. Neutron and gamma irradiation effects on power semiconductor switches. [Washington, D.C.]: NASA, 1990.

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7

Jo, Myungsuk. Multi-regional charge-based small-signal bipolar junction transistor model. 1989.

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8

Neudeck, George W. Modular Series on Solid State Devices, Volume III: The Bipolar Junction Transistor (2nd Edition). Prentice Hall, 1989.

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9

F, Chang M., ed. Current trends in heterojunction bipolar transistors. Singapore: World Scientific, 1996.

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10

Wade, Thomas. Noise in Bipolar Junction Transistors at Cryogenic Temperatures. Dissertation Discovery Company, 2019.

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11

Wade, Thomas. Noise in Bipolar Junction Transistors at Cryogenic Temperatures. Dissertation Discovery Company, 2019.

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12

Lee, Sang-Gug. Predictive modeling of high-current output resistance and thermal effects in bipolar junction transistors. 1992.

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13

Huang, Chun-ta. A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors. 1992.

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14

Physical Limitations of Inp/Ingaas Heterojunction Bipolar Transistors (Series in Microelectronics,). Hartung-Gorre, 2002.

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15

Cho, Hanjin. The modeling and measurement of parasitic and equivalent circuit elements in vertical and lateral bipolar junction transistors. 1992.

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16

Jin, Joohyun. Assessment and modeling of non-quasi-static, non-local, and multi-dimensional effects in advanced bipolar junction transistors. 1992.

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17

Lee, Herbert K. H., Matthew Taddy, Robert Gramacy, and Genetha Gray. Designing and analysing a circuit device experiment using treed Gaussian processes. Edited by Anthony O'Hagan and Mike West. Oxford University Press, 2018. http://dx.doi.org/10.1093/oxfordhb/9780198703174.013.28.

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Abstract:
This article describes a new circuit device, developed in collaboration with scientists at Sandia National Laboratories, based on treed Gaussian processes (TGP). The circuit devices under study are bipolar junction transistors, which are used to amplify electrical current. To aid with the design of the device, a computer model predicts its peak output as a function of the input dosage and a number of design parameters. The methodology also involves a novel sequential design procedure to generate data to fit the emulator. Both physical and computer simulation experiments are performed, and the results show that the TGP model can be useful for spatial data and semiparametric regression in the context of a computer experiment for designing a circuit device, for sequential design of (computer) experiments, sequential robust local optimization, validation, calibration, and sensitivity analysis.
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