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Journal articles on the topic 'Bipolar junction transistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Elamin, Abdenabi Ali, and Waell H. Alawad. "Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )." Journal of The Faculty of Science and Technology, no. 6 (January 12, 2021): 1–9. http://dx.doi.org/10.52981/jfst.vi6.597.

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This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result showed that, the saturation voltage VCE(sat) of Bipolar Junction Transistor decreased because of the gain degradation of the transistor and increased silicon resistivity, Another parameter of a bipolar junction transistor affected by ionizing radiation is a collector-base leakage current, a strong increase of the current is caused by the build-up charge near the junction.

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2

Maftunzada, S. A. L. "The Structure and Working Principle of a Bipolar Junction Transistor (BJT)." Physical Science International Journal 26, no. 11-12 (December 31, 2022): 35–39. http://dx.doi.org/10.9734/psij/2022/v26i11-12772.

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We studied bipolar junction transistors. We will see that the bipolar junction transistor, often referred to by its short name, transistor, actually functions as a current-controlled current source. We will also see that in the current generation of bipolar junction transistors, both majority and minority carriers are involved. For this reason, they gave this name to this type of transistor. In order to get enough information about this part, in the first two parts we will examine the construction and working method of the transistor. After that, we dedicate sections to how the transistor is placed in different combinations and the characteristics of the transistor in each combination.

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3

Rajabi, Mehran, Mina Amirmazlaghani, and Farshid Raissi. "Graphene-Based Bipolar Junction Transistor." ECS Journal of Solid State Science and Technology 10, no. 11 (November 1, 2021): 111004. http://dx.doi.org/10.1149/2162-8777/ac3551.

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Graphene was considered likely to revolutionize the electronics industry. This expectation has not yet been fulfilled, mainly due to the non-ideal characteristics of graphene-based transistors. Here, we propose a novel graphene-based structure as a graphene-based bipolar junction transistor (G-BJT), a nanoscale transistor which has the ideal characteristics of the common BJT transistor. In this device, N-P-N regions are formed in the graphene channel by applying voltages to the three gates. The carrier concentrations, energy band diagrams, and current-voltage curves are measured and presented. The base-emitter junction shows a rectifying behavior with the ideality factor in the range of (2.8–3.2), the built-in potential of 0.38V, and the saturation current of 10−12 A. The G-BJT provides a minimum current gain of 20 at the base-width of 10 nm, a feature that cannot be easily obtained in Si-based BJTs. Interestingly, the current gain(β) can be controlled by the gate voltages in G-BJT and changes by 26.5% compared to the maximum value, which leads to the controllability of this proposed transistor. Identical BJT behavior, scalability down to nanometer range, large carrier mobility, along the controllable current gain of G-BJT make this transistor a good candidate for the next generation of the nanoelectronics industry.

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4

Gerding, M., T. Musch, and B. Schiek. "Generation of short electrical pulses based on bipolar transistorsny." Advances in Radio Science 2 (May 27, 2005): 7–12. http://dx.doi.org/10.5194/ars-2-7-2004.

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Abstract. A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7V at 50Ω. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become forward biased. The resulting fast switch-off edge of the transistor’s output signal is the basis for the pulse generation. The fast switching of the transistor occurs as a result of the minority carriers that have been injected and stored across the base-collector junction under forward bias conditions. If the saturated transistor is suddenly reverse biased the pn-junction will appear as a low impedance until the stored charge is depleted. Then the impedance will suddenly increase to its normal high value and the flow of current through the junction will turn to zero, abruptly. A differentiation of the output signal of the transistor results in two short pulses with opposite polarities. The differentiating circuit is implemented by a transmission line network, which mainly acts as a high pass filter. Both the transistor technology (pnp or npn) and the phase of the transfer function of the differentating circuit influence the polarity of the output pulses. The pulse duration depends on the transistor parameters as well as on the transfer function of the pulse shaping network. This way of generating short electrical pulses is a new alternative for conventional comb generators based on steprecovery diodes (SRD). Due to the three-terminal structure of the transistor the isolation problem between the input and the output signal of the transistor network is drastically simplified. Furthermore the transistor is an active element in contrast to a SRD, so that its current gain can be used to minimize the power of the driving signal.

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5

Knyaginin, D. A., E. A. Kulchenkov, S. B. Rybalka, and A. A. Demidov. "Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012057. http://dx.doi.org/10.1088/1742-6596/2086/1/012057.

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Abstract In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.

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6

Lenahan, Patrick M., N. T. Pfeiffenberger, T. G. Pribicko, and Aivars J. Lelis. "Identification of Deep Level Defects in SiC Bipolar Junction Transistors." Materials Science Forum 527-529 (October 2006): 567–70. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.567.

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In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

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7

Doja, M. N., Moinuddin, and Umesh Kumar. "High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors." Active and Passive Electronic Components 22, no. 1 (1999): 51–73. http://dx.doi.org/10.1155/1999/58424.

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This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction Transistor operated at high speed in the sinusoidal small signal and the transient region of operations. The package uses a high frequency model non-linear circuit elements for accurate analysis. The package also uses transistor's lumped circuit model to calculate devices electrical parameters, and it also does dynamic simulation. It also includes the conventional model as a special case. Model verification has also been done by simulation.

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8

Raissi, F. "Josephson Fluxonic Bipolar Junction Transistor." IEEE Transactions on Appiled Superconductivity 14, no. 1 (March 2004): 87–93. http://dx.doi.org/10.1109/tasc.2004.824337.

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9

Perkasa, Dedy Bagus, Trias Andromeda, and Munawar A. Riyadi. "PERANCANGAN PERANGKAT KERAS ALAT UJI BIPOLAR JUNCTION TRANSISTOR BERBASIS MIKROKONTROLER." Transmisi 21, no. 1 (April 22, 2019): 19. http://dx.doi.org/10.14710/transmisi.21.1.19-24.

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Transistor bipolar merupakan piranti elektronika yang banyak digunakan dalam teknologi elektronika. Salah satu penggunaan transistor adalah sebagai amplifier audio. Pada rangkaian digital transistor digunakan sebagai saklar berkecepatan tinggi. Agar transistor bekerja dengan optimal, pemasangan transistor dalam rangkaian harus benar. Untuk itu, posisi kaki-kaki pin transistor dan nilai parameter yang ada pada transistor perlu diperhatikan. Alat bantu atau tester yang handal diperlukan untuk mengetahui letak pin pada transistor. Penelitian ini merancang suatu perangkat keras yang dapat digunakan untuk membaca jenis, letak kaki, nilai penguatan, dan tegangan maju transistor BJT (Bipolar Junction Transistor). Perangkat keras ini dirancang menggunakan mikrokontroller dan resistor untuk analisis titik kerja transistor. Pengujian dilakukan dengan menguji beberapa transistor BJT dengan tipe yang berbeda-beda. Hasil pengujian menunjukkan bahwa perangkat telah dapat bekerja dengan baik.

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10

Wu, Hongjun, Bangzheng Yin, and Zetao Chen. "Cross-platform Simulation of Bipolar Junction Transistor Electrical Principle." Journal of Physics: Conference Series 2068, no. 1 (October 1, 2021): 012035. http://dx.doi.org/10.1088/1742-6596/2068/1/012035.

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Abstract This paper designs a set of simulation method about bipolar junction transistor (short for ‘BJT’) electrical principle, which can be used as the foundation of cross-platform simulation of semiconductor electronic technology. Firstly, a mathematical model is established to simulate the amplification effect of bipolar junction transistor current control, the influence of Base current and Collector-Emitter Voltage on the working area of bipolar junction transistor. Secondly, interactive multimedia such as graphics, images and animation are used for simulation presentation through cross-platform software design method which is the mainstream internet web page interaction technology. Finally, a logic structure of the whole simulation software is designed, which presents data transmission, control workflow, relationship between each class and each layer in the simulation software.

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11

Jumiasih, Jumiasih, Trias Andromeda, and Munawar Agus Riyadi. "PERANCANGAN PERANGKAT LUNAK ALAT UJI BIPOLAR JUNCTION TRANSISTOR BERBASIS MIKROKONTROLER." TRANSIENT 7, no. 4 (May 25, 2019): 1075. http://dx.doi.org/10.14710/transient.7.4.1075-1083.

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Transistor merupakan salahsatu komponen penting dalam rangkaian elektronika. Transistor telah digunakan hampir disemua rangkaian elektronika. Namun, permasalahan sering timbul ketika ingin mengaplikasikan transistor ke dalam sebuah rangkaian elektronika, karena transistor sangat rentan terhadap kerusakan. Transistor bisa rusak karena suhu yang terlalu tinggi, kesalahan pengukuran, maupun kesalahan pemasangan dalam rangkaian. Hal ini karena cukup sulit mengetahui jenis maupun kaki-kaki dari transistor yang akan digunakan apabila tanpa panduan dari datasheet transistor tersebut. Bahkan datasheet transistor tidak memberikan data yang pasti mengenai nilai penguatan transistor (hanya berupa range maksimum-minimum). Pengecekan secara manual menggunakan multimeter dapat dilakukan untuk menentukan kaki-kaki transistor beserta nilai penguatannya, namun cara tersebut kurang praktis. Pengecekan kaki-kaki transistor dengan cara tersebut harus melalui beberapa tahapan dan ketelitian serta membutuhkan waktu yang cukup lama. Dalam Tugas Akhir ini, dirancang suatu perangkat pengujian transistor yang dapat membantu dalam pengecekan transistor BJT, melakukan identifikasi jenis transistor NPN dan PNP, identifikasi kaki-kaki transistor, mengetahui nilai penguatan (hFE) serta nilai tegangan forward (vf) dari transistor tersebut.

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12

Yuan, J. S., Y. Dai, Y. Gu, and J. Ning. "The bipolar junction transistor in saturation." Physica Status Solidi (a) 149, no. 2 (June 16, 1995): 757–69. http://dx.doi.org/10.1002/pssa.2211490227.

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13

Urteaga, M., S. Krishnan, D. Scott, Y. Wei, M. Dahlstrom, S. Lee, and M. J. W. Rodwell. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers." International Journal of High Speed Electronics and Systems 13, no. 02 (June 2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate transfer process. HBTs with submicron collector junctions exhibit extremely high fmax and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained record 21 dB unilateral power gain at 100 GHz. Recently-fabricated devices have shown unbounded unilateral power gain from 40-110 GHz, and fmax cannot be extrapolated from measuremente. However, these devices exhibited high power gains at 220 GHz, the frequency limit of presently available microwave network analyzers. Demonstrated amplifier ICs in the technology include reactively tuned amplifiers at 175 GHz, lumped and distributed amplifiers with bandwidths to 85 GHz, and W-band power amplifiers.

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14

PREDUSCA, GABRIEL. "TRANSIT TIME MODEL ANALYSIS THROUGH THE BASIS IN THE CASE OF DRIFT TRANSISTORS HBT." Journal of Science and Arts 22, no. 2 (June 30, 2022): 507–16. http://dx.doi.org/10.46939/j.sci.arts-22.2-c01.

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The manufacturing technology for heterojunction bipolar transistor (HBT) is different from the one used for bipolar silicon junction transistor (BJT). The base in case of BJT is manufactured by using diffusion and the diffusion laws determine a Gaussian type of profile in the base. HBT devices are manufactured using molecular epitaxy which gives a contact doping profile. In case of HBT, producing an internal field by using uniform doping is no more possible. This is the reason why was used in the gradation of the molar composition. The Analysis using Octave soft was made for the transit time through the base of the drift HBT transistors type GaAs/AlxGa1-xAs.

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15

EDWARDS, PAUL J. "SEMICONDUCTOR JUNCTION NOISE REVISITED: WHERE HAVE ALL THE PHYSICAL NOISE SOURCES GONE?" Fluctuation and Noise Letters 01, no. 03 (September 2001): C15—C19. http://dx.doi.org/10.1142/s0219477501000421.

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The distinction between "physical" and "equivalent" noise sources in bipolar junction transistors and other semiconductor devices has become blurred in the current engineering textbooks. An unfortunate consequence of this is the emergence in the literature of fictitious noise sources such as the "the collector-current shot noise" and the "base-current shot noise". These are often assigned a physical reality and incorrectly treated as real physical noise sources, independent of circuit topology. Text-books have encouraged successive generations of students in this belief. Non-physical noise sources such as these are convenient and legitimate, even essential, for the effective modeling and simulation of circuit noise. However their naïve use in teaching and research is likely to continue to give rise to fallacious concepts and misleading conclusions. The physical. The physical modeling of the light-emitting diode, the photon transport transistor and the bipolar junction transistor are briefly discussed to illustrate this view.

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16

OO, Myo, Nahrul Rashid, Julia Karim, Zin Mohamed, Rosminazuin Rahim, Amelia Azman, and Nurul Hasbullah. "Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation." Nuclear Technology and Radiation Protection 29, no. 1 (2014): 46–52. http://dx.doi.org/10.2298/ntrp1401046o.

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Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.

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17

Njawah Achiri, Humphrey Mokom, Vaclav Smidl, Zdenek Peroutka, and Lubos Streit. "Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements." Energies 13, no. 14 (July 21, 2020): 3749. http://dx.doi.org/10.3390/en13143749.

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State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles. Validation of the junction temperature is usually done using infrared camera or sensors placed close to the transistors or diodes (in some cases and open IGBT module) so that the measured temperature is as close to the junction as possible. In this paper, we propose an alternative method for determining the IGBT thermal impedance network using the principles of least squares. This method uses measured temperatures for defined heating and cooling cycles under different cooling conditions to determine the thermal impedance network. The results from the proposed method are compared with those obtained using state-of-the-art methods.

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18

Bang, Jeong-Ju, Chang-Su Huh, and Jong-Won Lee. "A Study on Destruction Characteristics of BJT (Bipolar Junction Transistor) at Different Pulse Repetition Rate." Journal of the Korean Institute of Electrical and Electronic Material Engineers 27, no. 3 (March 1, 2014): 167–71. http://dx.doi.org/10.4313/jkem.2014.27.3.167.

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19

Alhmoud, Lina, and Ali Khudhair Al-Jiboory. "Insulated-gate bipolar transistor junction temperature estimation based on ℋ∞ robust controller in wind energy applications." Wind Engineering 44, no. 5 (September 27, 2019): 548–58. http://dx.doi.org/10.1177/0309524x19877645.

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This article presents lifetime estimation using robust control based on thermal path degradation condition of insulated-gate bipolar transistor wind power modules. Online measurements of the on-state voltage [Formula: see text] are considered to be a promising method for obtaining a thermal-sensitive electrical parameter for wire-bond lift-off. This parameter demonstrates a good correlation with junction temperature. Due to the harsh environment, disturbances and uncertain parameters are founded within the compact set of wind energy generation systems. The uncertainty sacrifices some degree of accuracy of junction temperature measurements. Hence, robust control theory has been utilized to synthesize [Formula: see text] controller for the thermal impedance of high-power insulated-gate bipolar transistors. To study this reliability problem, an integrated model of wind energy generation system is built in MATLAB/Simulink for the closed-loop system. Simulation results show the benefit of the designed controller compared to the open-loop system in terms of thermal cycles of junction temperature and lifetime estimation.

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20

Barzdenas, Vaidotas, Gediminas Grazulevicius, John Liobe, Aleksandr Vasjanov, and Leonid Kladovscikov. "Verification of a Fabless Device Model Using TCAD Tools: from Bipolar Transistor Formation to I-V Characteristics Extraction." Ingeniería e Investigación 41, no. 3 (May 10, 2021): e88685. http://dx.doi.org/10.15446/ing.investig.v41n3.88685.

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This paper describes the analysis of processes used in microand nanoelectronic device manufacturing. It also presents an exemplary and novel laboratory exercise in which an epitaxial planar n + pn bipolar transistor with junction isolation is illustrated and analyzed stepbystep. Only seven photolithography steps are used to obtain this bipolar transistor structure: for buried layer formation, for junction transistor isolation and collectors regions formation, for base region formation, for emitter and collector n+ region formation, for contact windows, for first aluminum metallization, and, finally, for passivation. Silvaco TCAD software tools are used to implement all of these manufacturing processes and to simulate the resulting IV characteristics of all presented semiconductor structures. This type of laboratory work provides students with basic knowledge and a consistent understanding of bipolar transistor manufacturing, as well as facilitating theoretical understanding, analysis, and simulation of various semiconductor manufacturing processes without the need for costly and lengthy technological manufacturing experiments. This article also presents the conclusions and other benefits of such laboratory work, as well as possible recommendations for further improvement or expansion.

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21

Su, Bao-Wang, Bin-Wei Yao, Xi-Lin Zhang, Kai-Xuan Huang, De-Kang Li, Hao-Wei Guo, Xiao-Kuan Li, Xu-Dong Chen, Zhi-Bo Liu, and Jian-Guo Tian. "A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing." Nanoscale Advances 2, no. 4 (2020): 1733–40. http://dx.doi.org/10.1039/d0na00201a.

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22

Wang, Jia, Ya-Hong Xie, and Hiroshi Amano. "High-Gain Gated Lateral Power Bipolar Junction Transistor." IEEE Electron Device Letters 42, no. 9 (September 2021): 1370–73. http://dx.doi.org/10.1109/led.2021.3099982.

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23

Zhang, Yourun, Jinfei Shi, Ying Liu, Chengchun Sun, Fei Guo, and Bo Zhang. "High current gain 4H-SiC bipolar junction transistor." Journal of Semiconductors 37, no. 4 (April 2016): 044005. http://dx.doi.org/10.1088/1674-4926/37/4/044005.

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24

Rucker, L. M., and T. D. Davis. "Excess base noise in the bipolar junction transistor." Solid-State Electronics 28, no. 9 (September 1985): 875–76. http://dx.doi.org/10.1016/0038-1101(85)90078-4.

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25

Tybrandt, Klas, Erik O. Gabrielsson, and Magnus Berggren. "Toward Complementary Ionic Circuits: ThenpnIon Bipolar Junction Transistor." Journal of the American Chemical Society 133, no. 26 (July 6, 2011): 10141–45. http://dx.doi.org/10.1021/ja200492c.

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26

Wang, J., and B. W. Williams. "The 4H-SiC npn power bipolar junction transistor." Semiconductor Science and Technology 14, no. 12 (December 1, 1999): 1088–97. http://dx.doi.org/10.1088/0268-1242/14/12/314.

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27

Eriksson, K. G. P., Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, and Mikael Östling. "A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors." Materials Science Forum 600-603 (September 2008): 1171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1171.

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To determine the maximum allowed power dissipation in a power transistor, it is important to determine the relationship between junction temperature and power dissipation. This work presents a new method for measuring the junction temperature in a SiC bipolar junction transistor (BJT) that is self-heated during DC forward conduction. The method also enables extraction of the thermal resistance between junction and ambient by measurements of the junction temperature as function of DC power dissipation. The basic principle of the method is to determine the temperature dependent I-V characteristics of the transistor under pulsed conditions with negligible self-heating, and compare these results with DC measurements with self-heating. Consistent results were obtained from two independent temperature measurements using the temperature dependence of the current gain, and the temperature dependence of the base-emitter I-V characteristics, respectively.

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Lee, Kin Kiong, Jamie Steward Laird, Takeshi Ohshima, Shinobu Onoda, Toshio Hirao, and Hisayoshi Itoh. "Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation." Materials Science Forum 645-648 (April 2010): 1013–16. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1013.

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This paper investigates the transient induced currents by energetic carbon ions in 6H-SiC MOSFETs and the carrier dynamic response due to such a heavy ion collision is simulated by Technology Computer Aided Design (TCAD). It was found that a heavy ion strike induces a bipolar effect on the transistor, whereby the current transients can vary in both polarities. And this has been attributed to the inherent in the MOSFET is a parasitic bipolar junction transistor.

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Chirkova, L. V., K. T. Yermaganbetov, and L. Tezekbaeva. "Principles of synergetics in training of specialists physical and technical profile." Bulletin of the Karaganda University. "Physics" Series 98, no. 2 (June 30, 2020): 136–42. http://dx.doi.org/10.31489/2020ph2/136-142.

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The article discusses the use of the basic principles of synergetics in the training of physicists in the study of the discipline «Physical Electronics». The work is based on many years of experience in teaching the discipline at the Department of Radiophysics and Electronics of Karaganda State University named after E.A. Buketova. It is shown that the system «semiconductor structure + external source of electrical energy» can be considered as an open nonequilibrium thermodynamic system in which cooperative processes of spontaneous self-organization due to the constant exchange of energy and matter develop. The physical processes in bipolar transistors in the active mode of operation are analyzed. By means of a qualitative theoreti- cal analysis, it was established that the system under consideration interacts with self-organizing processes that result in spontaneous lowering of the potential barrier in the emitter region and an increase in similar barter in the region of collector junctions; spontaneous injection of minority charge carriers into the base is observed, resulting in a spontaneous increase in the concentration of minority charge carriers in the base layer adjacent to the transition. Spontaneous transfer of charge carriers through the base to the collector causes a spontaneous decrease in the collector junction resistance to the resistance of a forward-biased emitter junction, etc. All of the above processes determine the spontaneous redistribution of the voltage of the power source, as a result of which the power at the output of the transistor begins to exceed the power at its input, i.e. A bipolar transistor will amplify the power.

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You-Run, Zhang, Zhang Bo, Li Ze-Hong, Lai Chang-Jin, and Li Zhao-Ji. "Thermal analytic model of current gain for bipolar junction transistor-bipolar static induction transistor compound device." Chinese Physics B 18, no. 2 (February 2009): 763–67. http://dx.doi.org/10.1088/1674-1056/18/2/058.

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31

Liu, Liwei, Ningsheng Xu, Yu Zhang, Peng Zhao, Huanjun Chen, and Shaozhi Deng. "Bipolar Junction Transistors: Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals (Adv. Funct. Mater. 17/2019)." Advanced Functional Materials 29, no. 17 (April 2019): 1970113. http://dx.doi.org/10.1002/adfm.201970113.

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PANKRATOV, E. L. "INFLUENCE OF INHOMOGENEITY OF A MULTILAYER STRUCTURE ON REDISTRIBUTION OF INFUSED DOPANT DURING PRODUCTION — A BIPOLAR TRANSISTOR." International Journal of Nanoscience 09, no. 03 (June 2010): 159–68. http://dx.doi.org/10.1142/s0219581x10006661.

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It has been recently shown, that inhomogeneity of a multilayer structure leads to increasing of sharpness of diffusion-junction rectifier (see, for example, Refs. 1–3), which was formed in the multilayer structure. It has also been shown, that together with increasing sharpness the homogeneity of impurity distribution in doped area increases. In this paper both the effects (increasing of the sharpness of diffusion-junction rectifier and increasing the homogeneity of impurity distribution) have been used for production of a system of p-n-junctions (a bipolar transistors). Annealing time has been optimized for simultaneously increasing the sharpness and the homogeneity.

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PANKRATOV, E. L. "LOCAL DOPING AND OPTIMAL ANNEALING OF A MESH MULTILAYER STRUCTURE TO DECREASE THE SPATIAL DIMENSIONS OF INTEGRATED p–n-JUNCTIONS." Nano 04, no. 05 (October 2009): 303–23. http://dx.doi.org/10.1142/s179329200900185x.

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It has been recently shown that inhomogeneity of a multilayer structure and optimization of annealing time give us the possibility to decrease the depth of p–n-junctions, which were produced in the structures. The additional to the considered effect is increasing of homogeneity of dopant distribution in enriched by the dopant area of p–n-junction. In the present paper analysis of dopant redistribution in a multilayer structures during production a series of p–n-junctions, which was produced in the multilayer structures, has been done. We consider an approach to increase the sharpness of both diffused-junction and implanted-junction rectifiers, which comprise in a bipolar transistor or thyristor, and increasing of homogeneity of dopants distributions in enriched by the dopants areas of p–n-junctions. The approach gives us possibility to increase the degree of integration of p–n-junctions, which was produced as elements of integrated circuits. Optimization of annealing time for simultaneously increasing of the sharpness and homogeneity has been done.

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34

Vozniak, Oleksandr, and Andrii Shtuts. "CALCULATION OF NON-STANDARD W-PARAMETERS OF FOUR-POLE ON BIPOLAR TRANSISTORS." ENGINEERING, ENERGY, TRANSPORT AIC, no. 2(109) (August 27, 2020): 122–28. http://dx.doi.org/10.37128/2520-6168-2020-2-13.

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Improving the performance of microwave devices can be achieved both through the use of a fundamentally new element base, and through the use of new circuit designs. In this respect, the direction of use of the reactive properties of transistors as well as transistor structures with negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range is promising in this respect. In order to confirm the proposed methods, it is necessary to compare the results of the experimental studies using the proposed methods and means of measuring the W-parameters of real potentially unstable four-poles. As such four-poles it is proposed to use bipolar and transistors with a wide range of frequencies of potential instability. The paper develops mathematical models of W-parameters of such structures and evaluates their parameters in the frequency range. The active four-pole is a transistor model. Its W parameters can be determined either experimentally - for specific conditions or calculated - by using a physical transistor replacement circuit. In most cases, the calculation path is more acceptable because it allows to obtain analytical expressions for the four-pole, it is important in the analysis of the influence of various factors on the characteristics of the scheme under study. The inertial properties of the transistor are already manifested at relatively low frequencies and must be taken into account in practically the entire operating range of the transistor. The theoretical model holds up to frequencies f  2fт (where ft is the limit frequency) [1,3]. At higher frequencies, it is necessary to consider the parasitic reactive parameters of real transistors, first of all, the inductance of the terminals. A physically T-equivalent equivalent transistor replacement scheme was proposed by Pritchard in a simplified version [4]. It has several varieties, differing in the configuration of the circuit consisting of the resistance of the base material and the capacity of the collector junction. If we carefully consider and compare the T and U-shaped circuits of the transistor substitution, it can be noticed that they differ only in the configuration of their inne r part - the theoretical model. At high frequencies P and T, such circuits are not exact mutual equivalents. This is due to the approximation used in the transition from one circuit to another. However, the frequency characteristics of the circuits are very close. Each of them models the processes in the transistor with approximately the same accuracy, and in this sense they are equivalent.

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35

Pien. "Effects of Total Ionizing Dose on Bipolar Junction Transistor." American Journal of Applied Sciences 7, no. 6 (June 1, 2010): 807–10. http://dx.doi.org/10.3844/ajassp.2010.807.810.

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Mimila-Arroyo, J. "Free electron gas primary thermometer: The bipolar junction transistor." Applied Physics Letters 103, no. 19 (November 4, 2013): 193509. http://dx.doi.org/10.1063/1.4829741.

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Nagy, A., A. Polanco, and M. Alvarez. "A New Bipolar Junction Transistor Base-Emitter Capacitance Model." Sensor Letters 4, no. 3 (September 1, 2006): 305–11. http://dx.doi.org/10.1166/sl.2006.030.

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Jha, Aashu, Thomas Ferreira de Lima, Hooman Saeidi, Simon Bilodeau, Alexander N. Tait, Chaoran Huang, Siamak Abbaslou, Bhavin Shastri, and Paul R. Prucnal. "Lateral bipolar junction transistor on a silicon photonics platform." Optics Express 28, no. 8 (April 6, 2020): 11692. http://dx.doi.org/10.1364/oe.389213.

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39

Ferris, C. D. "Evaluation of bipolar junction transistor transconductance in practical applications." IEEE Transactions on Education 36, no. 3 (1993): 293–95. http://dx.doi.org/10.1109/13.231506.

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Rodriguez-Tellez, J. "New nonlinear large-signal DC bipolar junction transistor model." IEE Proceedings G Circuits, Devices and Systems 138, no. 2 (1991): 145. http://dx.doi.org/10.1049/ip-g-2.1991.0027.

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41

LINDBERG, ERIK, ARŪNAS TAMAŠEVIČIUS, GYTIS MYKOLAITIS, and SKAIDRA BUMELIENĖ. "TOWARDS THRESHOLD FREQUENCY IN CHAOTIC COLPITTS OSCILLATOR." International Journal of Bifurcation and Chaos 17, no. 10 (October 2007): 3449–53. http://dx.doi.org/10.1142/s0218127407019196.

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A novel version of chaotic Colpitts oscillator is described. Instead of a linear loss resistor, it includes an extra inductor and a diode in the collector circuit of the transistor. The modified circuit in comparison with the common Colpitts oscillator may generate chaotic oscillations at the fundamental frequency f* noticeably closer to the threshold frequency fT of the employed bipolar junction transistor, up to f* ≈ 0.6fT.

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42

Zhang, Qing Chun Jon, Robert Callanan, Anant K. Agarwal, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, and Charles Scozzie. "10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC." Materials Science Forum 645-648 (April 2010): 1025–28. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1025.

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4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

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Petrosyants, Konstantin O., Igor A. Kharitonov, Lev M. Sambursky, and Maxim V. Kozhukhov. "IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors." Advanced Materials Research 1083 (January 2015): 185–89. http://dx.doi.org/10.4028/www.scientific.net/amr.1083.185.

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I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables, which introduces noticeable measurement error. In this paper IV-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2-wire circuits are presented and compared to direct (without cables) measurements. Significant enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.

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Yarn, K. F. "MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors." Active and Passive Electronic Components 25, no. 3 (2002): 239–43. http://dx.doi.org/10.1080/08827510213499.

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The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and an Ic ideal factor of 1.01 are obtained, respectively. The use of delta doping sheet at BE junction results in a high gain and low offset voltage HBT. The improvement of current gain and offset voltage may be attributed to the reduction of BE potential spike by introducing a delta doping layer even without the BE junction passivation.

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Odzhaev, V. B., A. K. Panfilenko, A. N. Pyatlitski, V. S. Prosolovich, S. V. Shvedau, V. A. Filipenya, V. Yu Yavid, and Yu N. Yankovsky. "INVESTIGATION OF INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE I–V CHARACTERISTICS OF THE BIPOLAR n–p–n-TRANSISTOR." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 63, no. 2 (July 3, 2018): 244–49. http://dx.doi.org/10.29235/1561-8358-2018-63-2-244-249.

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Contamination of the monocrystal silicon with technological impurities in the devices fabrication process exerts a considerable influence on the electro-physical characteristics of the bipolar n–p–n-transistors. Revelation of the causes of the labile reproducibility of the basic characteristics of the bipolar planar n–p–n-transistors is vital for the purpose of establishing the factors, determining reliability and stability of the operational parameters of the integrated circuits. There were investigated I–V characteristics of the various lots of the bipolar n–p–n-transistors, fabricated under the epitaxialplanar technology as per the similar process charts with the identical used technological materials, however, at different times. It is established that the electro-physical characteristics of the bipolar n–p–n-transistors substantially depend on the contents of the technological impurities in the substrate material. Availability of the high concentration of the generation-recombination centers, related to the metallic impurities, results both in increase of the reverse current of the collector – base junction of the transistors and the significant reduction of the breakdown voltage of the collector junction. The most probable cause of deterioration of the electro-physical parameters of the bipolar n–p–n-transistors is the material contamination with the technological impurities (such, as Fe, Cl, Ca, Cu, Zn and others) during the production process of the devices fabrication. The sources of impurity may be both the components and sub-assemblies of the technological units and the materials and reagents under usage.

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46

Deen, M. Jamal. "High-frequency noise modelling and the scaling of the noise parameters of polysilicon emitter bipolar junction transistors." Canadian Journal of Physics 74, S1 (December 1, 1996): 195–99. http://dx.doi.org/10.1139/p96-858.

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This paper presents detailed results from modelling the four noise parameters: minimum noise figure (NFMIN), noise resistance (RN), optimal source resistance (RS,OPT), and reactance (XS,OPT) as functions of frequency and collector-biasing current. Compared to previous BJT (bipolar junction transistor) high-frequency noise models, we include the emitter resistance, which results in an increased input device impedance, and a degeneration of the device transconductance. We also give an explicit formula for the noise resistance. We present noise results for polysilicon emitter bipolar transistors as a function of emitter areas to demonstrate how the noise parameters scale with emitter areas over a range of frequencies. However, these results are given only for devices in which the pad impedances are much larger than the device input impedance, so that very little input signal is lost through the pads to ground.

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Tajima, Taku, Tohru Nakamura, Y. Watabe, Masataka Satoh, and Tadashi Nakamura. "Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT." Materials Science Forum 645-648 (April 2010): 1065–67. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1065.

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In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the result of etching extrinsic base regions by mask of contact metals, maximum common emitter current gain was improved from 0.7 to 1.6.

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He, Xibin. "The Advantages and Applications of IGBT Compared with Conventional BJT and MOSFET." Journal of Physics: Conference Series 2386, no. 1 (December 1, 2022): 012054. http://dx.doi.org/10.1088/1742-6596/2386/1/012054.

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Abstract Nowadays, the power semiconductor devices have been used in many fields like wind power generation systems, the rail transit. Bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) as well as some other devices are the dominating the market. The insulated gate bipolar transistor (IGBT) as a mixed device of the BJT and the MOSFET, has a preeminent performance. In this paper, the characteristics of the punch through IGBT (PT-IGBT), the MOSFET and the BJT will be investigated by TCAD. Then the PT-IGBT is compared with the BJT and the MOSFET, for concluding its advantages. According to the simulation result, the PT-IGBT has the on-state current of 9*10-4A and the forward blocking voltage of 1200V, which are much higher than the other two devices. In the end of the paper, the development of the semiconductor devices is predicted, about the research trends.

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d’Alessandro, Vincenzo, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, and Lorenzo Codecasa. "A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches." Electronics 12, no. 16 (August 16, 2023): 3471. http://dx.doi.org/10.3390/electronics12163471.

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This paper presents a critical and detailed overview of experimental techniques for the extraction of the thermal resistance of bipolar transistors from simple DC current/voltage measurements. More specifically, this study focuses on techniques based on a thermometer, i.e., the relation between the base-emitter voltage and the junction temperature. The theory behind the techniques is described with a unified and comprehensible nomenclature. Advantages, underlying approximations, and limitations of the methods are illustrated. The accuracy is assessed by emulating the DC measurements with PSPICE electrothermal simulations of a transistor model, applying the techniques to the simulated currents/voltages, and comparing the extracted thermal resistance data with the values obtained from the target formulation embedded in the transistor model. An InGaP/GaAs HBT and an Si/SiGe HBT for high-frequency applications are considered as case-studies.

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Zhang, Nuo, Yi Rao, Nuo Xu, Ayden Maralani, and Albert P. Pisano. "Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures." Materials Science Forum 778-780 (February 2014): 1013–16. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1013.

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In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was performed. At elevated temperatures, although the current gain of the device is reduced, the intrinsic voltage gain increases to 5900 at 673 K, suggesting 4H-SiC BJT has the potential to be used as a voltage amplifier at extremely high temperatures.

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