Relevant bibliographies by topics / Bipolar switching

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'Bipolar switching'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "Bipolar switching"

1

Akiskal, H. S. "Temperament and bipolar switching." European Neuropsychopharmacology 6 (June 1996): 218. http://dx.doi.org/10.1016/0924-977x(96)88329-5.

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Symonds, R. L. "‘Switching’ in bipolar disorder." Advances in Psychiatric Treatment 12, no. 4 (2006): 306–7. http://dx.doi.org/10.1192/apt.12.4.306.

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Ryu, Hojeong, Beomjun Park, and Sungjun Kim. "Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device." Metals 11, no. 10 (2021): 1531. http://dx.doi.org/10.3390/met11101531.

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In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device. The intrinsic switching of TaOx is preferred when a positive bias is applied to the TiN electrode in which the threshold switching with volatile property is observed. On the other hand, indium diffusion could cause resistive switching by formation and rupture of metallic conducting filament when a positive bias and a negative bias are applied to the ITO electrode for set and reset processes. The bipolar resistive switching occurs b
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Ryu, Hojeong, and Sungjun Kim. "Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode." Metals 11, no. 4 (2021): 653. http://dx.doi.org/10.3390/met11040653.

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In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and
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Lodhi, Anil, Shalu Saini, Anurag Dwivedi, Arpit Khandelwal, and Shree Prakash Tiwari. "Bipolar resistive switching properties of TiO x /graphene oxide doped PVP based bilayer ReRAM." Journal of Micromechanics and Microengineering 32, no. 4 (2022): 044001. http://dx.doi.org/10.1088/1361-6439/ac521f.

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Abstract In this paper, firstly, some recently explored promising materials and processes for resistive random access memory (ReRAM) devices with bipolar switching mechanism along with their performance are discussed. Further, resistive switching behaviour of TiO x /graphene oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated. It was found that bipolar resistive switching behaviour is significantly enhanced by embedding 2D material such as GO in the organic polymer acting as switching layer. ReRAM devices with Ag/PVP:GO/TiO x /fluorine doped tin oxide (FTO) stru
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Lange-Asschenfeldt, C., I. Blaeser, and T. Supprian. "Bipolar Switching after Carbamazepine Withdrawal." Pharmacopsychiatry 40, no. 2 (2007): 86–87. http://dx.doi.org/10.1055/s-2007-970140.

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Silard, Andrei P., and Gabriel Nani. "TILBW Bipolar Power Switching Transistor." Japanese Journal of Applied Physics 28, Part 2, No. 3 (1989): L356—L357. http://dx.doi.org/10.1143/jjap.28.l356.

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Kalam, Kristjan, Mark-Erik Aan, Joonas Merisalu, Markus Otsus, Peeter Ritslaid, and Kaupo Kukli. "Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films." Crystals 14, no. 10 (2024): 909. http://dx.doi.org/10.3390/cryst14100909.

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Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a stacked oxide layer structure of SnO2 | HfO2 | SnO2 | HfO2 additionally exhibited bidirectional threshold resistive switching properties. The sample with an oxide layer structure of HfO2 | SnO2 | HfO2 displayed bipolar resistive switching with a ratio of high and low resistance states of three orders of magnitude. Endurance tests revealed distinguisha
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Kwon, So-Yeon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Hi-Deok Lee, and Ga-Won Lee. "The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode." Electronic Materials 5, no. 2 (2024): 71–79. http://dx.doi.org/10.3390/electronicmat5020006.

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In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray diffraction (XRD) analysis shows that ZnO has a hexagonal wurtzite structure, and HfO2 exhibits both monoclinic and orthorhombic phases. The average grain sizes are 10.9 nm for ZnO and 1.55 nm for HfO2. In regards to the electrical characteristics, the I–V curve, cycling test, and voltage stress are measure
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Post, Robert M., Kirk D. Denicoff, Gabriele S. Leverich, and Mark A. Frye. "Drug-Induced Switching in Bipolar Disorder." CNS Drugs 8, no. 5 (1997): 352–65. http://dx.doi.org/10.2165/00023210-199708050-00002.

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Dissertations / Theses on the topic "Bipolar switching"

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Chin, Shaoan. "MOS-bipolar composite power switching devices." Diss., Virginia Polytechnic Institute and State University, 1985. http://hdl.handle.net/10919/54275.

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Two MOS-Bipolar composite power semiconductor switching devices are proposed and experimentally demonstrated. These devices feature high voltage and high current capabilities, fast switching speeds, simple gate drive requirements, savings in chip area, reverse bias second breakdown ruggedness and large safe operating areas. Application characteristics of the devices for high frequency power inverter circuits are discussed. Monolithic integration of the two composite devices are also proposed.<br>Ph. D.
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Rabah, Kefa V. O. "A study of switching of MOS-bipolar power transistor hybrids." Thesis, Lancaster University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.314432.

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Yang, Xin. "Controlled IGBT switching for power electronics building block." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708442.

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Nicholls, Jonathan Christopher. "Soft-switching performance analysis of the clustered insulated gate bipolar transistor (CIGBT)." Thesis, De Montfort University, 2009. http://hdl.handle.net/2086/2396.

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The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current densities. The power ratings of IGBTs are slowly increasing and are envisaged to replace thyristors in medium power applications such as High Voltage Direct Current (HVDC) inverter systems and traction drive controls. Devices such as the MOS Controlled Thyristor (MCT) and Emitter Switched Thyristor (EST) were developed in an effort to furth
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Hossin, Mohamad Abdalla. "Evaluation of gallium arsenide Schottky Gate Bipolar Transistor for high-voltage power switching applications." Thesis, University of Newcastle Upon Tyne, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.263129.

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Gambetta, Daniele Morco. "Sensorless technique for BLDC motors." University of Southern Queensland, Faculty of Engineering and Surveying, 2006. http://eprints.usq.edu.au/archive/00001427/.

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Commutation is a fundamental feature of all DC machines. In conventional DC machines the commutation function is performed by the commutator and brushes. These act as both position sensors and switches. The mechanical commutator has obvious disadvantages. Overcoming those disadvantages has been a major reason behind the development of brushless DC (BLDC) machines. In brushless DC machines commutation is performed by power electronic devices forming part of an inverter bridge. However, switching of the power electronic devices has to be synchronised with rotor position. Position sensing is ther
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Hatem, Firas Odai. "Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM : physics-based modelling, circuit design and testing." Thesis, University of Nottingham, 2017. http://eprints.nottingham.ac.uk/39786/.

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Over the last few years, the non-volatile memories (NVM) have been dominating the research of the storage elements. The resistance random-access memory (RRAM) and the memristor that employs the resistive switching (RS) mechanism appear to be potential candidates for NVM. Among the RS materials that were reported is the TaOx which showed surprising RS performance. This oxide material has been widely used to construct a metal-insulator-semiconductor-metal (MISM) RRAM which can be referred to as bi-layered RRAM. This bi-layered RRAM consists of TaOx as a bulk material and Ta2O5 as an insulator la
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Eio, Samson. "Current Injection Techniques to Optimise the Switching Transients of Power Diodes. Thyristors and Insulated Gate Bipolar Transistors (IGBTs)." Thesis, Staffordshire University, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.522131.

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You, Tiangui. "Resistive switching in BiFeO3-based thin films and reconfigurable logic applications." Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-212501.

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The downscaling of transistors is assumed to come to an end within the next years, and the semiconductor nonvolatile memories are facing the same physical downscaling challenge. Therefore, it is necessary to consider new computing paradigms and new memory concepts. Resistive switching devices (also referred to as memristive switches) are two-terminal passive device, which offer a nonvolatile switching behavior by applying short bias pulses. They have been considered as one of the most promising candidates for next generation memory and nonvolatile logic applications. They provide the possibili
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Perez, Stéphanie. "Etude des effets de dose et débit de dose sur des amplificateurs à technologies bipolaires. Mise en application sur le satellite Robusta." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20075/document.

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L'agressivité de l'environnement radiatif spatial constitue une cause majeure de défaillance des composants et systèmes embarqués sur les satellites. Les transistors bipolaires sont sensibles au rayonnement ionisant et peuvent présenter un effet de débit de dose (ELDRS). Une plus forte dégradation est alors observée à faible débit de dose. Les normes actuelles de test ne permettent pas de prendre en compte entièrement cette sensibilité au débit. La nouvelle méthode de test dite des Débits commutés prend en compte cet effet d'ELDRS. Une charge utile développée sur le satellite Robusta et présen
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Books on the topic "Bipolar switching"

1

Katzer, Uwe. Schaltungsentwicklung, Simulation und Entwurf von Ansteuer- und Überwachungs-IC's für eine IGBT-Halbbrücke. VDI Verlag, 1999.

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2

Frangos, Philippos Phivos. The simulation and measurement of temperature transients in switching bipolar power transistors. University of Birmingham, 1986.

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3

Gerster, Christian. Reihenschaltung von Leistungshalbleitern mit steuerseitig geregelter Spannungsverteilung. Hartung-Gorre, 1995.

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Book chapters on the topic "Bipolar switching"

1

Okada, Y., and K. Tada. "GaAs/AlGaAs Reflection-Type Optical Switch Using Heterojunction Bipolar Transistor Waveguide Structure." In Photonic Switching II. Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-76023-5_8.

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Gachovska, Tanya K., Jerry L. Hudgins, Enrico Santi, Angus Bryant, and Patrick R. Palmer. "IGBT Under an Inductive Load-Switching Condition in Simulink®." In Modeling Bipolar Power Semiconductor Devices. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-031-02498-6_4.

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Bruchhaus, Rainer, and Rainer Waser. "Bipolar Resistive Switching in Oxides for Memory Applications." In Thin Film Metal-Oxides. Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_4.

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Gandhi, Gaurav, and Varun Aggarwal. "Canonic Memristor: Bipolar Electrical Switching in Metal-Metal Contacts." In Advances in Memristors, Memristive Devices and Systems. Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-51724-7_11.

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Prakash, Chandra, and Ambesh Dixit. "Thermally Synthesized Cu/CuO/Cu(Sheet) with Bipolar Resistive Switching." In Springer Proceedings in Physics. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-1571-8_25.

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Woggon, B. "Treatment of Bipolar Disorder, Depressed Phase Augmentation/Switching Strategies." In Mood Disorders. KARGER, 1997. http://dx.doi.org/10.1159/000061662.

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Folsche, Thorsten, Hannah Benedictine Maier, Thomas Hillemacher, and Helge Frieling. "Combination Therapies and Switching of Agents in Depression and Bipolar Disorders." In NeuroPsychopharmacotherapy. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-62059-2_437.

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Folsche, Thorsten, Hannah Benedictine Maier, Thomas Hillemacher, and Helge Frieling. "Combination Therapies and Switching of Agents in Depression and Bipolar Disorders." In NeuroPsychopharmacotherapy. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-56015-1_437-1.

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Carstens, Niko, Maik-Ivo Terasa, Pia Holtz, et al. "Memristive Switching: From Individual Nanoparticles Towards Complex Nanoparticle Networks." In Springer Series on Bio- and Neurosystems. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-36705-2_9.

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AbstractNovel hardware concepts in the framework of neuromorphic engineering are intended to overcome fundamental limits of current computer technologies and to be capable of efficient mass data processing. To reach this, research into material systems which enable the implementation of memristive switching in electronic devices, as well as into analytical approaches helping to understand fundamental mechanisms and dynamics of memristive switching is inevitable. In this chapter, memristive switching based on Ag metal filament formation is discussed throughout different scales, providing insigh
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Bertilsson, Kent, and Chris I. Harris. "Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.975.

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Conference papers on the topic "Bipolar switching"

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Chen, Yijia, Jianjun Ma, Zhengmei Lu, and Miao Zhu. "Multi-Switching-Cycle Modulation for Power Dispatching of Bipolar DC-DC Converter." In 2024 IEEE 8th Conference on Energy Internet and Energy System Integration (EI2). IEEE, 2024. https://doi.org/10.1109/ei264398.2024.10991753.

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Nakamura, Ayaka, Mikimasa Iwata, Yasunobu Yokomizu, and Naoto Kodama. "Power Flow Control and Mode-Switching Method Considering Single-Pole Trip for Bipolar MTDC System." In 2024 International Conference on Sustainable Energy: Energy Transition and Net-Zero Climate Future (ICUE). IEEE, 2024. https://doi.org/10.1109/icue63019.2024.10795532.

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SILARD, Andrei, and Gabriel NANI. "TILBW Bipolar Power Switching Transistor." In 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.a-2-2.

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Fengxiao, Zhai, Hao Yunqi, Liu Nannan, Gao Xiaokai, Liu Sujuan, and Yang Kun. "Bipolar resistive switching of Ge2Sb2Te5 material." In Eleventh International Conference on Information Optics and Photonics (CIOP 2019), edited by Hannan Wang. SPIE, 2019. http://dx.doi.org/10.1117/12.2548815.

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Zucker, J. E., Yi Chen, M. D. Divino, et al. "Monolithic Integration of Quantum Well Optical Waveguides with Heterojunction Bipolar Electronics for Wavelength Switching." In Photonics in Switching. Optica Publishing Group, 1993. http://dx.doi.org/10.1364/ps.1993.pmb4.1.

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Most near-term photonic switching systems exploit optical devices for their large bandwidth but still require electronics for memory, logic, and control functions. Hence there is great interest in monolithically integrating electronics and photonics12. For example, packet header interpretation and routing can be acheived with an optoelectronic circuit consisting of integrated photodetector, transistor electronics, and space-division switches. If, as an overlay to the space-division fabric, wavelength division multiplexing (WDM) is used, then switching capacity can be tremendously increased. Ev
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Yueh-Ru Yang. "A DSP-based bipolar switching power supply." In 2011 IEEE Ninth International Conference on Power Electronics and Drive Systems (PEDS 2011). IEEE, 2011. http://dx.doi.org/10.1109/peds.2011.6147384.

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Breglio, Giovanni, Antonello Cutolo, Paolo Spirito, and Luigi Zeni. "Optical switching of bipolar-mode field effect transistors." In Photonics for Industrial Applications, edited by William R. Donaldson. SPIE, 1995. http://dx.doi.org/10.1117/12.198651.

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Kuibo Yin, Mi Li, Yiwei Liu, et al. "Bipolar resistance switching in multiferroic BiFeO3 polycrystalline films." In 2010 IEEE 3rd International Nanoelectronics Conference (INEC). IEEE, 2010. http://dx.doi.org/10.1109/inec.2010.5424655.

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Alekseeva, Liudmila, Anatolii Petrov, and Dmitrii Chigirev. "Bipolar resistive switching in PbO nanoscale thin films." In 2016 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW). IEEE, 2016. http://dx.doi.org/10.1109/eiconrusnw.2016.7448106.

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Hsu, C. W., C. L. Lo, I. T. Wang, and T. H. Hou. "High-density 1S1R Flexible Bipolar Resistive-Switching Memory." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.b-8-1.

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Reports on the topic "Bipolar switching"

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Cooper, James A., and Jr. Exploratory Development of SiC Bipolar Transistors and GaN Heterojunction Bipolar Transistors for High-Power Switching Applications. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada413135.

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Ovrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ada616757.

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