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1

Akiskal, H. S. "Temperament and bipolar switching." European Neuropsychopharmacology 6 (June 1996): 218. http://dx.doi.org/10.1016/0924-977x(96)88329-5.

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2

Symonds, R. L. "‘Switching’ in bipolar disorder." Advances in Psychiatric Treatment 12, no. 4 (2006): 306–7. http://dx.doi.org/10.1192/apt.12.4.306.

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3

Ryu, Hojeong, Beomjun Park, and Sungjun Kim. "Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Device." Metals 11, no. 10 (2021): 1531. http://dx.doi.org/10.3390/met11101531.

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In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device. The intrinsic switching of TaOx is preferred when a positive bias is applied to the TiN electrode in which the threshold switching with volatile property is observed. On the other hand, indium diffusion could cause resistive switching by formation and rupture of metallic conducting filament when a positive bias and a negative bias are applied to the ITO electrode for set and reset processes. The bipolar resistive switching occurs b
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4

Ryu, Hojeong, and Sungjun Kim. "Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode." Metals 11, no. 4 (2021): 653. http://dx.doi.org/10.3390/met11040653.

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In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material compositions of a Al2O3 thin film layer and Si substrate. Bipolar resistive switching occurred in a more stable manner than the unipolar resistive switching in the device did. Five cells were verified over 50 endurance cycles in terms of bipolar resistive switching, and a good retention was confirmed for 10,000 s in the high-resistance state (HRS) and
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5

Lodhi, Anil, Shalu Saini, Anurag Dwivedi, Arpit Khandelwal, and Shree Prakash Tiwari. "Bipolar resistive switching properties of TiO x /graphene oxide doped PVP based bilayer ReRAM." Journal of Micromechanics and Microengineering 32, no. 4 (2022): 044001. http://dx.doi.org/10.1088/1361-6439/ac521f.

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Abstract In this paper, firstly, some recently explored promising materials and processes for resistive random access memory (ReRAM) devices with bipolar switching mechanism along with their performance are discussed. Further, resistive switching behaviour of TiO x /graphene oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated. It was found that bipolar resistive switching behaviour is significantly enhanced by embedding 2D material such as GO in the organic polymer acting as switching layer. ReRAM devices with Ag/PVP:GO/TiO x /fluorine doped tin oxide (FTO) stru
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6

Lange-Asschenfeldt, C., I. Blaeser, and T. Supprian. "Bipolar Switching after Carbamazepine Withdrawal." Pharmacopsychiatry 40, no. 2 (2007): 86–87. http://dx.doi.org/10.1055/s-2007-970140.

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7

Silard, Andrei P., and Gabriel Nani. "TILBW Bipolar Power Switching Transistor." Japanese Journal of Applied Physics 28, Part 2, No. 3 (1989): L356—L357. http://dx.doi.org/10.1143/jjap.28.l356.

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8

Kalam, Kristjan, Mark-Erik Aan, Joonas Merisalu, Markus Otsus, Peeter Ritslaid, and Kaupo Kukli. "Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films." Crystals 14, no. 10 (2024): 909. http://dx.doi.org/10.3390/cryst14100909.

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Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a stacked oxide layer structure of SnO2 | HfO2 | SnO2 | HfO2 additionally exhibited bidirectional threshold resistive switching properties. The sample with an oxide layer structure of HfO2 | SnO2 | HfO2 displayed bipolar resistive switching with a ratio of high and low resistance states of three orders of magnitude. Endurance tests revealed distinguisha
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9

Kwon, So-Yeon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Hi-Deok Lee, and Ga-Won Lee. "The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode." Electronic Materials 5, no. 2 (2024): 71–79. http://dx.doi.org/10.3390/electronicmat5020006.

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In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray diffraction (XRD) analysis shows that ZnO has a hexagonal wurtzite structure, and HfO2 exhibits both monoclinic and orthorhombic phases. The average grain sizes are 10.9 nm for ZnO and 1.55 nm for HfO2. In regards to the electrical characteristics, the I–V curve, cycling test, and voltage stress are measure
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10

Post, Robert M., Kirk D. Denicoff, Gabriele S. Leverich, and Mark A. Frye. "Drug-Induced Switching in Bipolar Disorder." CNS Drugs 8, no. 5 (1997): 352–65. http://dx.doi.org/10.2165/00023210-199708050-00002.

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11

Xu, Qingyu, Xueyong Yuan, Yanqiang Cao, Lifang Si, and Di Wu. "Bipolar resistive switching in BiFe0.95Mn0.05O3 films." Solid State Communications 152, no. 22 (2012): 2036–39. http://dx.doi.org/10.1016/j.ssc.2012.08.023.

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12

Rosack, Jim. "`Switching' Risks Minimal In Bipolar Treatment." Psychiatric News 39, no. 19 (2004): 22. http://dx.doi.org/10.1176/pn.39.19.0390022.

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13

Akiskal, Hagop S. "Switching From 'Unipolar' to Bipolar II." Archives of General Psychiatry 52, no. 2 (1995): 114. http://dx.doi.org/10.1001/archpsyc.1995.03950140032004.

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14

Pradel, Annie, Nathalie Frolet, Michel Ramonda, Andrea Piarristeguy, and Michel Ribes. "Bipolar resistance switching in chalcogenide materials." physica status solidi (a) 208, no. 10 (2011): 2303–8. http://dx.doi.org/10.1002/pssa.201000767.

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15

Brijesh, Rajput*1 &. Dr. RudraPratapsingh chauhan2. "A REVIEW ARTICLEOF THREE PHASE PSO BASED HARMONICS REDUCTION TECHNIQUE." INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY 7, no. 4 (2018): 375–81. https://doi.org/10.5281/zenodo.1218615.

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This paper reports particle swarm optimization (PSO) technique for selective harmonic elimination (SHE) in pulse width modulated inverter. A PSO based optimization technique is proposed to minimize the overall THD of the output voltage of PWM inverter and corresponding switching angles are computed. This method is applied for the bipolar switching in three phase inverter for three switching angles and five switching angles. The switching angles are computed to completely eliminate the lower order harmonics. The result of the bipolar case using three switching angles are compared with that of a
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16

Attia, Hussain, Hang Seng Che, Tan Kheng Suan Freddy, and Ahmad Elkhateb. "Bipolar and unipolar schemes for confined band variable switching frequency PWM based inverter." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 5 (2021): 3763. http://dx.doi.org/10.11591/ijece.v11i5.pp3763-3771.

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The single phase inverter performance through the unipolar and bipolar strategies has been previously analyzed based on the constant switching frequency pulse width modulation (CSFPWM). However, the confined band variable switching frequency PWM (CB-VSFPWM) is currently proposed as a new variable switching frequency PWM technique through unipolar strategy to facilitate the design of high order filter, to reduce the switching losses, and to reduce the current total harmonics distortion (THD) as well. To evaluate the performance of a single phase inverter based on the CBVSFPWM through bipolar st
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17

Hussain, Attia, Seng Che Hang, Kheng Suan Freddy Tan, and Elkhateb Ahmad. "Bipolar and unipolar schemes for confined band variable switching frequency PWM based inverter." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 5 (2021): 3763–71. https://doi.org/10.11591/ijece.v11i5.pp3763-3771.

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The single phase inverter performance through the unipolar and bipolar strategies has been previously analyzed based on the constant switching frequency pulse width modulation (CSFPWM). However, the confined band variable switching frequency PWM (CB-VSFPWM) is currently proposed as a new variable switching frequency PWM technique through unipolar strategy to facilitate the design of high order filter, to reduce the switching losses, and to reduce the current total harmonics distortion (THD) as well. To evaluate the performance of a single phase inverter based on the CBVSFPWM through bipolar st
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18

Nardi, Federico, Simone Balatti, Stefano Larentis, David C. Gilmer, and Daniele Ielmini. "Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory." IEEE Transactions on Electron Devices 60, no. 1 (2013): 70–77. http://dx.doi.org/10.1109/ted.2012.2226728.

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19

Du, Huiying, Jinghong Chen, Meilin Tu, et al. "Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts." Journal of Materials Chemistry C 7, no. 39 (2019): 12160–69. http://dx.doi.org/10.1039/c9tc03842f.

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20

Hu, Cheng, and Yong Dan Zhu. "Poly-NiO/Nb:SrTiO3 Based Resistive Switching Device for Nonvolatile Random Access Memory." Advanced Materials Research 605-607 (December 2012): 1944–47. http://dx.doi.org/10.4028/www.scientific.net/amr.605-607.1944.

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The bipolar resistive switching characteristic of Ag/poly-NiO/Nb:SrTiO3/In device has been investigated in this letter. The current-voltage characteristics of the device shows reproducible and pronounced bipolar resistive switching after 2V forming process and the resistive switching ratio RHRS/RLRS can reach 104 at the read voltage -0.5V. Multilevel memories can be realized by changing the max reverse voltages and show well retention characteristic even after several sweeping cycles. The results have been discussed in terms of carrier injection process via defects at the interface of the poly
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21

Горшков, О. Н., В. Г. Шенгуров, С. А. Денисов та ін. "Резистивное переключение в мемристорах на основе гетероструктур Ag/Ge/Si". Письма в журнал технической физики 46, № 2 (2020): 44. http://dx.doi.org/10.21883/pjtf.2020.02.48953.18075.

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It is shown that two modes of resistive switching – bipolar and volatile unipolar – are peculiar for the Ag/Ge/Si structures with germinating dislocations in the germanium layer. In this modes the structures have stable states of electric current with ION/IOFF ~1.5–2.7. The volatile unipolar type of switching can be caused by the capture of charge carriers to deep levels associated with lattice defects in the Ge film of the memristor. At the same time, bipolar switching is associated with the drift of Ag+ ions along germinating dislocations.
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22

Chakraborty, Avijit, Pradip Kumar Sadhu, Kallol Bhaumik, Palash Pal, and Nitai Pal. "Behaviour of a High Frequency Parallel Quasi Resonant Inverter Fitted Induction Heater with Different Switching Frequencies." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 2 (2016): 447. http://dx.doi.org/10.11591/ijece.v6i2.pp447-457.

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<p>This paper investigates the behavior of a high frequency parallel quasiresonant<br />inverter fitted domestic induction heater with different switching frequencies. The power semiconductor switch Insulated Gate Bipolar Junction Transistor (IGBT) is incorporated in this high frequency inverter that can operate under ZVS and ZCS conditions during the switching operations at certain switching frequency to reduce switching losses. The proposed induction heating system responds to three different switching frequencies with providing different results. An Insulated Gate Bipolar Juncti
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23

Salaoru, Iulia, and Christos Christodoulos Pantelidis. "Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film." Micromachines 11, no. 2 (2020): 182. http://dx.doi.org/10.3390/mi11020182.

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In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.
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24

Terasa, Maik-Ivo, Pia Holtz, Niko Carstens, et al. "Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching." PLOS ONE 17, no. 3 (2022): e0264846. http://dx.doi.org/10.1371/journal.pone.0264846.

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With this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral nano-scaled distances by depositing a sparse network of carbon nanotubes (CNTs) via spin-coating of a custom-made CNT dispersion. Electrochemical metallization-type (ECM) resistive switching is obtained by implanting AgAu nanoparticles with a Haberland-type gas aggregation cluster source into the nano
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25

Fathoni, Fathoni. "RANCANG BANGUN PERANGKAT PEMBANGKIT PWM BIPOLAR." JURNAL ELTEK 16, no. 1 (2018): 14. http://dx.doi.org/10.33795/eltek.v16i1.83.

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Electrical power settings, both AC and DC can be done by linear or switching. Controlled loads may be motors, heating elements or incandescent lamps. Generally the efficiency of load power control by way of switching is better than linear way so the way switching is widely used today. Switching also allows for automatic, remote and wireless control In load power management system with microcontroller, PWM generator circuit output is used for control of power switch. The output pulse can be TTL standard or with lower amplitude and on the control of the H bridge circuit required bipolar PWM with
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26

Parker, Gordon, Gordon Parker, and Kay Parker. "Which Antidepressants Flick the Switch?" Australian & New Zealand Journal of Psychiatry 37, no. 4 (2003): 464–68. http://dx.doi.org/10.1046/j.1440-1614.2003.01207.x.

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Objective: The Black Dog Institute seeks to address issues of relevance to the clinical management of those with a mood disorder. This overview considers the capacity of antidepressant drugs, and particularly the new classes, to induce manic switching in depressed patients. Method: Relevant literature is reviewed. Results: It is unclear whether antidepressant drugs from any of the classes induce switching in unipolar depressed patients. In bipolar depressed patients, the broad-spectrum tricyclic and monoamine oxidase inhibitor drugs present a clear risk of switching, the selective serotonin re
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27

Jianwei Zhao, Jianwei Zhao, Fengjuan Liu Fengjuan Liu, Jian Sun Jian Sun, Haiqin Huang Haiqin Huang, Zuofu Hu Zuofu Hu, and Xiqing Zhang Xiqing Zhang. "Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices." Chinese Optics Letters 10, no. 1 (2012): 013102–13105. http://dx.doi.org/10.3788/col201210.013102.

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28

Kim, Sungjun, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, and Byung-Gook Park. "Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory." Materials 10, no. 5 (2017): 459. http://dx.doi.org/10.3390/ma10050459.

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29

Krug, Kristine, Emma Brunskill, Antonina Scarna, Guy M. Goodwin, and Andrew J. Parker. "Perceptual switch rates with ambiguous structure-from-motion figures in bipolar disorder." Proceedings of the Royal Society B: Biological Sciences 275, no. 1645 (2008): 1839–48. http://dx.doi.org/10.1098/rspb.2008.0043.

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Slowing of the rate at which a rivalrous percept switches from one configuration to another has been suggested as a potential trait marker for bipolar disorder. We measured perceptual alternations for a bistable, rotating, structure-from-motion cylinder in bipolar and control participants. In a control task, binocular depth rendered the direction of cylinder rotation unambiguous to monitor participants' performance and attention during the experimental task. A particular direction of rotation was perceptually stable, on average, for 33.5 s in participants without psychiatric diagnosis. Euthymi
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30

Gomez-Marlasca, F., N. Ghenzi, M. J. Rozenberg, and P. Levy. "Understanding electroforming in bipolar resistive switching oxides." Applied Physics Letters 98, no. 4 (2011): 042901. http://dx.doi.org/10.1063/1.3537957.

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31

Bogusz, Agnieszka, Danilo Bürger, Ilona Skorupa, Oliver G. Schmidt, and Heidemarie Schmidt. "Bipolar resistive switching in YMnO3/Nb:SrTiO3pn-heterojunctions." Nanotechnology 27, no. 45 (2016): 455201. http://dx.doi.org/10.1088/0957-4484/27/45/455201.

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32

Borca, Bogdana, Verena Schendel, Rémi Pétuya, et al. "Bipolar Conductance Switching of Single Anthradithiophene Molecules." ACS Nano 9, no. 12 (2015): 12506–12. http://dx.doi.org/10.1021/acsnano.5b06000.

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33

Lai, Chun-Hung, Chih-Yi Liu, and Hsiwen Yang. "Bipolar Resistance Switching Characteristics in Zirconium Oxide." Ferroelectrics 457, no. 1 (2013): 146–52. http://dx.doi.org/10.1080/00150193.2013.859064.

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34

HELWICK, CAROLINE. "Antipsychotics May Protect Against Switching in Bipolar." Clinical Psychiatry News 37, no. 10 (2009): 16. http://dx.doi.org/10.1016/s0270-6644(09)70348-0.

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35

Dias, C., H. Lv, R. Picos, et al. "Bipolar resistive switching in Si/Ag nanostructures." Applied Surface Science 424 (December 2017): 122–26. http://dx.doi.org/10.1016/j.apsusc.2017.01.140.

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36

Lin, Xi, Adnan Younis, Xinrun Xiong, Kejun Dong, Dewei Chu, and Sean Li. "Bipolar resistive switching characteristics in LaTiO3 nanosheets." RSC Advances 4, no. 35 (2014): 18127. http://dx.doi.org/10.1039/c4ra01626b.

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37

Sahu, Dwipak Prasad, and S. Narayana Jammalamadaka. "Bipolar resistive switching in HoCrO3 thin films." Nanotechnology 31, no. 35 (2020): 355202. http://dx.doi.org/10.1088/1361-6528/ab9328.

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38

Tsunoda, K., Y. Fukuzumi, J. R. Jameson, Z. Wang, P. B. Griffin, and Y. Nishi. "Bipolar resistive switching in polycrystalline TiO2 films." Applied Physics Letters 90, no. 11 (2007): 113501. http://dx.doi.org/10.1063/1.2712777.

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39

Xu, Qingyu, Xueyong Yuan, and Mingxiang Xu. "The Bipolar Resistive Switching in BiFeO3 Films." Journal of Superconductivity and Novel Magnetism 25, no. 4 (2011): 1139–44. http://dx.doi.org/10.1007/s10948-011-1380-5.

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40

Brivio, Stefano, and Sabina Spiga. "Stochastic circuit breaker network model for bipolar resistance switching memories." Journal of Computational Electronics 16, no. 4 (2017): pp 1154–1166. https://doi.org/10.1007/s10825-017-1055-y.

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Abstract:We present a stochastic model for resistance switching devices in which a square grid of resistor breakers plays the role of the insulator switching layer. The probability of breaker switching between two fixed resistance values, ROFF and RON, is determined by the corresponding voltage drop and thermal Joule heating. The breaker switching produces the overall device resistance change. Salient features of all the switching operations of bipolar resistance switching memories (RRAMs) are reproduced by the model and compared to a prototypical HfO2-based RRAM device. In particular, the nee
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41

Das, Nayan C., Se-I. Oh, Jarnardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang. "Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride." Applied Sciences 10, no. 10 (2020): 3506. http://dx.doi.org/10.3390/app10103506.

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Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiOxNy-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching f
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42

Chow, T. Paul. "SiC Bipolar Power Devices." MRS Bulletin 30, no. 4 (2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.

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AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.
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43

Nguyen, Hai Hung, Hanh Kieu Thi Ta, Sungkyun Park, Thang Bach Phan, and Ngoc Kim Pham. "Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film." RSC Advances 10, no. 22 (2020): 12900–12907. http://dx.doi.org/10.1039/c9ra10101b.

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44

Yan, An, Gang Liu, Chao Zhang, and Liang Fang. "The Study of Au/TiO2/Au Resistive Switching Memory with Crosspoint Structure." Advanced Materials Research 652-654 (January 2013): 659–63. http://dx.doi.org/10.4028/www.scientific.net/amr.652-654.659.

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This paper presets a process of fabrication and measurements of Au/TiO2/Au resistive switching memory. The device was fabricated using crosspoint structure, and the electrode width and TiO2 film of which are 1 µm and 50 nm. According to our experimental result, resistive switching cells exhibit good stability and reliability with bipolar resistive switching behavior.
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45

Patil, Harshada, Honggyun Kim, Shania Rehman, et al. "Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction." Nanomaterials 11, no. 2 (2021): 359. http://dx.doi.org/10.3390/nano11020359.

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Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filamen
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46

Wang, Hua, Zhi Da Li, Ji Wen Xu, Yu Pei Zhang, and Ling Yang. "Effects of Annealing Temperature on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering." Applied Mechanics and Materials 778 (July 2015): 88–91. http://dx.doi.org/10.4028/www.scientific.net/amm.778.88.

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ZnMn2O4films were fabricated on p-Si substrate by magnetron sputtering. The effects of annealing temperature on microstructure, resistance switching properties and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. The results indicated that the annealing temperature has not changed its spinel structure, the bipolar resistance behavior and endurance characteristics, but the grain become more and more large, arranged closed and distributed evenly with the increase of annealing temperatur
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47

Das, Nayan C., Minjae Kim, Jarnardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang. "Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride." Micromachines 12, no. 9 (2021): 1049. http://dx.doi.org/10.3390/mi12091049.

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Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 102 and good data retention of >104 s. The resistive switching mechanism in the Ti/MgFx/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgFx layer. In addition, filamentary s
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48

Muller, R., C. Krebs, L. Goux, et al. "Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer." IEEE Electron Device Letters 30, no. 6 (2009): 620–22. http://dx.doi.org/10.1109/led.2009.2020521.

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Khan, Sobia Ali, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim, and Sungjun Kim. "Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device." Nanomaterials 11, no. 2 (2021): 315. http://dx.doi.org/10.3390/nano11020315.

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Abstract:
In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical information of the device stack including the interfacial layer of TiON is well confirmed by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) analysis. The device exhibits uniform gradual bipolar resistive switching (BRS) with good endurance and self-compliance characte
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50

Elpelt, Rudolf, Bernd Zippelius, and Daniel Domes. "Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET." Materials Science Forum 858 (May 2016): 817–20. http://dx.doi.org/10.4028/www.scientific.net/msf.858.817.

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Abstract:
In switching applications with half-bridge like configurations the load current is commutated to the so-called reverse or body-diode of a switching device once each switching cycle. The bipolar charge generated in the switch in principle leads to a reverse recovery current and to additional losses. Though it is well known, that in silicon carbide these reverse recovery losses are very low compared to e.g. silicon devices, it turns out that depending on device structure and switching conditions the reverse recovery charge for the JFET may become larger than can be explainable by the stored bipo
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