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Journal articles on the topic 'Bipolar transistor'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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1

Maftunzada, S. A. L. "The Structure and Working Principle of a Bipolar Junction Transistor (BJT)." Physical Science International Journal 26, no. 11-12 (December 31, 2022): 35–39. http://dx.doi.org/10.9734/psij/2022/v26i11-12772.

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We studied bipolar junction transistors. We will see that the bipolar junction transistor, often referred to by its short name, transistor, actually functions as a current-controlled current source. We will also see that in the current generation of bipolar junction transistors, both majority and minority carriers are involved. For this reason, they gave this name to this type of transistor. In order to get enough information about this part, in the first two parts we will examine the construction and working method of the transistor. After that, we dedicate sections to how the transistor is placed in different combinations and the characteristics of the transistor in each combination.

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2

Kapen, Tilegen Abaiuly. "INSULATED-GATE BIPOLAR TRANSISTOR." Chronos 7, no. 8(70) (October 13, 2022): 32–35. http://dx.doi.org/10.52013/2658-7556-70-8-12.

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Insulated-gate bipolar transistor is a cunningly composed hybrid of field-effect and bipolar transistors. At the same time, it has adopted the main advantages of the two main types of transistors and has found wide application in high-power and high-voltage devices.

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3

Knyaginin, D. A., E. A. Kulchenkov, S. B. Rybalka, and A. A. Demidov. "Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012057. http://dx.doi.org/10.1088/1742-6596/2086/1/012057.

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Abstract In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.

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4

Elamin, Abdenabi Ali, and Waell H. Alawad. "Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )." Journal of The Faculty of Science and Technology, no. 6 (January 12, 2021): 1–9. http://dx.doi.org/10.52981/jfst.vi6.597.

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This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result showed that, the saturation voltage VCE(sat) of Bipolar Junction Transistor decreased because of the gain degradation of the transistor and increased silicon resistivity, Another parameter of a bipolar junction transistor affected by ionizing radiation is a collector-base leakage current, a strong increase of the current is caused by the build-up charge near the junction.

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5

Bleizgys, Vytautas, and Andrius Platakis. "INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS." Mokslas - Lietuvos ateitis 2, no. 1 (February 28, 2010): 59–62. http://dx.doi.org/10.3846/mla.2010.013.

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The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.

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6

Doja, M. N., Moinuddin, and Umesh Kumar. "High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors." Active and Passive Electronic Components 22, no. 1 (1999): 51–73. http://dx.doi.org/10.1155/1999/58424.

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This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction Transistor operated at high speed in the sinusoidal small signal and the transient region of operations. The package uses a high frequency model non-linear circuit elements for accurate analysis. The package also uses transistor's lumped circuit model to calculate devices electrical parameters, and it also does dynamic simulation. It also includes the conventional model as a special case. Model verification has also been done by simulation.

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7

Gerding, M., T. Musch, and B. Schiek. "Generation of short electrical pulses based on bipolar transistorsny." Advances in Radio Science 2 (May 27, 2005): 7–12. http://dx.doi.org/10.5194/ars-2-7-2004.

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Abstract. A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7V at 50Ω. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become forward biased. The resulting fast switch-off edge of the transistor’s output signal is the basis for the pulse generation. The fast switching of the transistor occurs as a result of the minority carriers that have been injected and stored across the base-collector junction under forward bias conditions. If the saturated transistor is suddenly reverse biased the pn-junction will appear as a low impedance until the stored charge is depleted. Then the impedance will suddenly increase to its normal high value and the flow of current through the junction will turn to zero, abruptly. A differentiation of the output signal of the transistor results in two short pulses with opposite polarities. The differentiating circuit is implemented by a transmission line network, which mainly acts as a high pass filter. Both the transistor technology (pnp or npn) and the phase of the transfer function of the differentating circuit influence the polarity of the output pulses. The pulse duration depends on the transistor parameters as well as on the transfer function of the pulse shaping network. This way of generating short electrical pulses is a new alternative for conventional comb generators based on steprecovery diodes (SRD). Due to the three-terminal structure of the transistor the isolation problem between the input and the output signal of the transistor network is drastically simplified. Furthermore the transistor is an active element in contrast to a SRD, so that its current gain can be used to minimize the power of the driving signal.

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8

Rajabi, Mehran, Mina Amirmazlaghani, and Farshid Raissi. "Graphene-Based Bipolar Junction Transistor." ECS Journal of Solid State Science and Technology 10, no. 11 (November 1, 2021): 111004. http://dx.doi.org/10.1149/2162-8777/ac3551.

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Graphene was considered likely to revolutionize the electronics industry. This expectation has not yet been fulfilled, mainly due to the non-ideal characteristics of graphene-based transistors. Here, we propose a novel graphene-based structure as a graphene-based bipolar junction transistor (G-BJT), a nanoscale transistor which has the ideal characteristics of the common BJT transistor. In this device, N-P-N regions are formed in the graphene channel by applying voltages to the three gates. The carrier concentrations, energy band diagrams, and current-voltage curves are measured and presented. The base-emitter junction shows a rectifying behavior with the ideality factor in the range of (2.8–3.2), the built-in potential of 0.38V, and the saturation current of 10−12 A. The G-BJT provides a minimum current gain of 20 at the base-width of 10 nm, a feature that cannot be easily obtained in Si-based BJTs. Interestingly, the current gain(β) can be controlled by the gate voltages in G-BJT and changes by 26.5% compared to the maximum value, which leads to the controllability of this proposed transistor. Identical BJT behavior, scalability down to nanometer range, large carrier mobility, along the controllable current gain of G-BJT make this transistor a good candidate for the next generation of the nanoelectronics industry.

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9

Wu, Dong Yan, Zhi Liang Tan, Li Yun Ma, and Peng Hao Xie. "The Failure Modeling Analysis of Bipolar Silicon Transister Device Caused by ESD." Applied Mechanics and Materials 427-429 (September 2013): 929–32. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.929.

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With the development of electronic technology, the electronic threats faced by microwave semiconductor devices was increasingly serious.In order to study the electrostatic discharge damage mechanism of bipolar silicon transistors, this paper analyzed the basic physical characteristics of bipolar transistor in electrostatic discharge, such as kirk effect and current crowding effect. Through analysis the human body electrostatic discharge model, established the ESD electric injury model of bipolar silicon transistor. If we knew the production process parameter of devices, we can calculate the ESD damage threshold for designing bipolar silicon device and providing a theoretical basis of parameter optimization. Finally the common ESD damage criterion were analyzed from different angles.

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10

Mierzwinski, Piotr, and Wieslaw Kuzmicz. "VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector." Electronics 12, no. 8 (April 15, 2023): 1871. http://dx.doi.org/10.3390/electronics12081871.

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This paper summarizes the results of investigations of bipolar transistors made in VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology. This technology was proposed by W. Maly as an alternative to classical bulk CMOS technology. However, the basic VESTIC cell can be used not only to make field effect transistors but also to make bipolar transistors. Their structures differ in many ways from existing structures of bipolar transistors. The investigations reported here aim to answer the question: can VESTIC-based lateral bipolar transistors be useful as active devices, and can they be made technologically compatible with field effect VESTIC devices? The theoretical studies were followed by the fabrication and measurements of VESTIC-based p-n-p and n-p-n bipolar devices. Although the manufacturing technology available was far from optimal, working bipolar devices were obtained. The results show that VESTIC-based bipolar devices may achieve acceptable parameters if made with state-of-the-art manufacturing technology. The main outcome of the research reported in the paper is that p-n-p and n-p-n bipolar transistors with acceptable parameters may be fabricated, together with field effect devices, in VESTIC-based integrated circuits. As a result, the VESTIC technology could become the new original BiCMOS technology.

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11

Gorbachuk, N. I., N. A. Poklonski, Ya N. Marochkina, and S. V. Shpakovski. "Controlling of Differential Resistance of p–n-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy." Devices and Methods of Measurements 10, no. 3 (September 9, 2019): 253–62. http://dx.doi.org/10.21122/2220-9506-2019-10-3-253-262.

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Controlling of parameters of manufactured transistors and interoperational controlling during their production are necessary conditions for production of competitive products of electronic industry. Traditionally for controlling of bipolar transistors the direct current measurements and registration of capacity-voltage characteristics are used. Carrying out measurements on alternating current in a wide interval of frequencies (20 Hz–30 MHz) will allow to obtain additional information on parameters of bipolar transistors. The purpose of the work is to show the possibilities of the method of impedance spectroscopy for controlling of differential resistance of p–n-junctions of the bipolar p–n–p-transistor in active mode.The KT814G p–n–p-transistor manufactured by JSC “INTEGRAL” was studied by the method of impedance spectroscopy. The values of differential electrical resistance and capacitance for base–emitter and base–collector p–n-junctions are defi at direct currents in base from 0.8 to 46 µA.The results of the work can be applied to elaboration of techniques of fi checking of discrete bipolar semiconductor devices.

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12

Lenahan, Patrick M., N. T. Pfeiffenberger, T. G. Pribicko, and Aivars J. Lelis. "Identification of Deep Level Defects in SiC Bipolar Junction Transistors." Materials Science Forum 527-529 (October 2006): 567–70. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.567.

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In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

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13

Fabian, Jaroslav, Igor Žutić, and S. Das Sarma. "Magnetic bipolar transistor." Applied Physics Letters 84, no. 1 (January 5, 2004): 85–87. http://dx.doi.org/10.1063/1.1637954.

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14

PREDUSCA, GABRIEL. "TRANSIT TIME MODEL ANALYSIS THROUGH THE BASIS IN THE CASE OF DRIFT TRANSISTORS HBT." Journal of Science and Arts 22, no. 2 (June 30, 2022): 507–16. http://dx.doi.org/10.46939/j.sci.arts-22.2-c01.

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The manufacturing technology for heterojunction bipolar transistor (HBT) is different from the one used for bipolar silicon junction transistor (BJT). The base in case of BJT is manufactured by using diffusion and the diffusion laws determine a Gaussian type of profile in the base. HBT devices are manufactured using molecular epitaxy which gives a contact doping profile. In case of HBT, producing an internal field by using uniform doping is no more possible. This is the reason why was used in the gradation of the molar composition. The Analysis using Octave soft was made for the transit time through the base of the drift HBT transistors type GaAs/AlxGa1-xAs.

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15

Vozniak, Oleksandr, and Andrii Shtuts. "CALCULATION OF NON-STANDARD W-PARAMETERS OF FOUR-POLE ON BIPOLAR TRANSISTORS." ENGINEERING, ENERGY, TRANSPORT AIC, no. 2(109) (August 27, 2020): 122–28. http://dx.doi.org/10.37128/2520-6168-2020-2-13.

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Improving the performance of microwave devices can be achieved both through the use of a fundamentally new element base, and through the use of new circuit designs. In this respect, the direction of use of the reactive properties of transistors as well as transistor structures with negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range is promising in this respect. In order to confirm the proposed methods, it is necessary to compare the results of the experimental studies using the proposed methods and means of measuring the W-parameters of real potentially unstable four-poles. As such four-poles it is proposed to use bipolar and transistors with a wide range of frequencies of potential instability. The paper develops mathematical models of W-parameters of such structures and evaluates their parameters in the frequency range. The active four-pole is a transistor model. Its W parameters can be determined either experimentally - for specific conditions or calculated - by using a physical transistor replacement circuit. In most cases, the calculation path is more acceptable because it allows to obtain analytical expressions for the four-pole, it is important in the analysis of the influence of various factors on the characteristics of the scheme under study. The inertial properties of the transistor are already manifested at relatively low frequencies and must be taken into account in practically the entire operating range of the transistor. The theoretical model holds up to frequencies f  2fт (where ft is the limit frequency) [1,3]. At higher frequencies, it is necessary to consider the parasitic reactive parameters of real transistors, first of all, the inductance of the terminals. A physically T-equivalent equivalent transistor replacement scheme was proposed by Pritchard in a simplified version [4]. It has several varieties, differing in the configuration of the circuit consisting of the resistance of the base material and the capacity of the collector junction. If we carefully consider and compare the T and U-shaped circuits of the transistor substitution, it can be noticed that they differ only in the configuration of their inne r part - the theoretical model. At high frequencies P and T, such circuits are not exact mutual equivalents. This is due to the approximation used in the transition from one circuit to another. However, the frequency characteristics of the circuits are very close. Each of them models the processes in the transistor with approximately the same accuracy, and in this sense they are equivalent.

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16

Pantel, R., E. Sondergard, D. Delille, and L. F. Tz Kwakman. "Quantitative Thickness Measurements of Thin Oxides Using Low Energy Loss Filtered TEM Imaging." Microscopy and Microanalysis 7, S2 (August 2001): 560–61. http://dx.doi.org/10.1017/s1431927600028877.

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A technique for very thin silicon oxide measurements using energy filtered TEM (EFTEM) is presented and applied for BiCMOS technology optimization.In advanced VLSI circuits, thin silicon oxide layers are used as critical part of active devices such as MOS or bipolar transistors (BiCMOS). Today the 2 nm thick gate oxides of the 0.12 urn generation MOS transistors can be controlled using high resolution TEM (HRTEM). However, for the next generations these measurements will become difficult or will necessitate Cs corrected microscopes'. For the NPN bipolar transistor very thin oxides (less than 0.5 nm) are used at the base-emitter interface to control the forward base (hole) current and improve the transistor current gain. This interface presents generally some roughness and the oxide control is impossible using HRTEM. in this communication we demonstrate a new technique for very thin oxide measurement using low loss energy filtered TEM (EFTEM).

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17

Novosyadlyj, S. P., and I. I. Abramova. "Features of the Signal System of Automated Design of Frequency Converters Systems - Ultrahigh Frequencies." Фізика і хімія твердого тіла 18, no. 4 (December 27, 2017): 472–83. http://dx.doi.org/10.15330/pcss.18.4.483.

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The article analyzes and outlines the modern principles of the theory of the signaling system of automated design with frequency transformations on a non-reciprocal electronic device - the transistor of ultrahigh frequencies. In addition, schematic variants of frequency converters on-field and bipolar transistors, Schottky diodes (varicaps) are considered; the signal theory of transistor and diode frequency converters is described: resistive and capacitive. Schematic performances of frequency converters represent variants of the signaling system of automated designing at ultrahigh frequencies.

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18

Perkasa, Dedy Bagus, Trias Andromeda, and Munawar A. Riyadi. "PERANCANGAN PERANGKAT KERAS ALAT UJI BIPOLAR JUNCTION TRANSISTOR BERBASIS MIKROKONTROLER." Transmisi 21, no. 1 (April 22, 2019): 19. http://dx.doi.org/10.14710/transmisi.21.1.19-24.

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Transistor bipolar merupakan piranti elektronika yang banyak digunakan dalam teknologi elektronika. Salah satu penggunaan transistor adalah sebagai amplifier audio. Pada rangkaian digital transistor digunakan sebagai saklar berkecepatan tinggi. Agar transistor bekerja dengan optimal, pemasangan transistor dalam rangkaian harus benar. Untuk itu, posisi kaki-kaki pin transistor dan nilai parameter yang ada pada transistor perlu diperhatikan. Alat bantu atau tester yang handal diperlukan untuk mengetahui letak pin pada transistor. Penelitian ini merancang suatu perangkat keras yang dapat digunakan untuk membaca jenis, letak kaki, nilai penguatan, dan tegangan maju transistor BJT (Bipolar Junction Transistor). Perangkat keras ini dirancang menggunakan mikrokontroller dan resistor untuk analisis titik kerja transistor. Pengujian dilakukan dengan menguji beberapa transistor BJT dengan tipe yang berbeda-beda. Hasil pengujian menunjukkan bahwa perangkat telah dapat bekerja dengan baik.

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19

Johnson, Mark. "The bipolar spin transistor." Nanotechnology 7, no. 4 (December 1, 1996): 390–96. http://dx.doi.org/10.1088/0957-4484/7/4/015.

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20

Johnson, Mark. "The bipolar spin transistor." Journal of Magnetism and Magnetic Materials 140-144 (February 1995): 21–24. http://dx.doi.org/10.1016/0304-8853(94)00589-3.

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21

Шоболова, Т. А., А. В. Коротков, Е. В. Петрякова, А. В. Липатников, А. С. Пузанов, С. В. Оболенский, and В. А. Козлов. "Сравнение радиационной стойкости перспективных биполярных и гетеробиполярных транзисторов." Физика и техника полупроводников 53, no. 10 (2019): 1391. http://dx.doi.org/10.21883/ftp.2019.10.48295.41.

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AbstractApproaches to solving the problem of the development of efficient bipolar and heterobipolar transistors operating at radio- and ultrahigh frequencies (0.1–10 GHz), which could be used as active elements of modern Si-based and GaAs-based radiation-resistant analog-digital integrated circuits, are discussed. Comparison of the radiation resistance of prospective “lateral” Si-based bipolar and “vertical” AlGaAs/GaAs heterobipolar transistors with a characteristic base thickness of 70–350 nm is performed. The features of the electron transport in active transistor regions are analyzed in detail and the influence of a surge in the velocity and the diffusion of quasi-ballistic electrons on an increase in the radiation resistance of transistors is evaluated.

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22

Huang, Lidong, Qiuyan Miao, Xiruo Su, Bin Wu, and Kaichen Song. "The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection." Sensors 21, no. 21 (October 26, 2021): 7102. http://dx.doi.org/10.3390/s21217102.

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This paper presents a minimum signal model via the AC small-signal model and the uncertainty principle, which reveals the minimum AC signal that can be amplified by a bipolar transistor. The Ebers—Moll model (EM3) can describe the small signal amplification process, but it is difficult to define the minimum amplifiable signal of the bipolar transistor. In this study, the correspondence relationship between the non-equilibrium carrier and the electric injection is proved, and the relationship between the life of the non-equilibrium carrier and the measurable signal is proposed by the uncertainty principle. Next, the limit of perceived minimum voltage is also derived in this paper. Then, combining with EM3 model, the minimum AC signal model of bipolar transistor is presented to calculate the minimum voltage signal of bipolar transistor that can be amplified. Finally, a number of the simulation and experiment results show that when the minimum signal in the model is used as input, the carrier concentration of the bipolar transistor does not change and the base electrode cannot perceive the signal, which verifies the validity of the minimum AC signal model.

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23

Jumiasih, Jumiasih, Trias Andromeda, and Munawar Agus Riyadi. "PERANCANGAN PERANGKAT LUNAK ALAT UJI BIPOLAR JUNCTION TRANSISTOR BERBASIS MIKROKONTROLER." TRANSIENT 7, no. 4 (May 25, 2019): 1075. http://dx.doi.org/10.14710/transient.7.4.1075-1083.

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Transistor merupakan salahsatu komponen penting dalam rangkaian elektronika. Transistor telah digunakan hampir disemua rangkaian elektronika. Namun, permasalahan sering timbul ketika ingin mengaplikasikan transistor ke dalam sebuah rangkaian elektronika, karena transistor sangat rentan terhadap kerusakan. Transistor bisa rusak karena suhu yang terlalu tinggi, kesalahan pengukuran, maupun kesalahan pemasangan dalam rangkaian. Hal ini karena cukup sulit mengetahui jenis maupun kaki-kaki dari transistor yang akan digunakan apabila tanpa panduan dari datasheet transistor tersebut. Bahkan datasheet transistor tidak memberikan data yang pasti mengenai nilai penguatan transistor (hanya berupa range maksimum-minimum). Pengecekan secara manual menggunakan multimeter dapat dilakukan untuk menentukan kaki-kaki transistor beserta nilai penguatannya, namun cara tersebut kurang praktis. Pengecekan kaki-kaki transistor dengan cara tersebut harus melalui beberapa tahapan dan ketelitian serta membutuhkan waktu yang cukup lama. Dalam Tugas Akhir ini, dirancang suatu perangkat pengujian transistor yang dapat membantu dalam pengecekan transistor BJT, melakukan identifikasi jenis transistor NPN dan PNP, identifikasi kaki-kaki transistor, mengetahui nilai penguatan (hFE) serta nilai tegangan forward (vf) dari transistor tersebut.

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24

Novosyadlyy, S. P., and A. M. Bosats'kyy. "Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits." Фізика і хімія твердого тіла 16, no. 1 (March 15, 2015): 221–29. http://dx.doi.org/10.15330/pcss.16.1.221-229.

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Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons, decrease transit time and the transition to a ballistic work.Power consumption is reduced too. Formation of large integrated circuits structures onSi-homotransition reduces their frequency range and performance.Nowadaysproposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and small size structures.These include, for example, the heterostructure field-effect transistors on a segmented doping, bipolar transistors with wide-emitter, transistor with soulful base, vertical ballistic transistors, devices with flat-doped barriers and hot electron transistors as element base of modern high-speed large integrated circuits.In this article we consider graded-gap technology formatting as bipolar and field-effect transistors, which are the basis of modern high-speedof large integrated circuits structures.

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25

LIU, QINGMIN, SURAJIT SUTAR, and ALAN SEABAUGH. "TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 640–45. http://dx.doi.org/10.1142/s0129156404002600.

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A new tunnel diode/transistor circuit topology is reported, which both increases speed and reduces power in differential comparators. This circuit topology is of special interest for use in direct digital synthesis applications. The circuit topology can be extended to provide performance improvements in high speed logic and signal processing applications. The circuits are designed based on InP/GaAsSb double heterojunction bipolar transistors and AlAs/InGaAs/AlAs resonant tunneling diodes. A self-aligned and scalable fabrication approach using nitride sidewalls and chemical mechanical polishing is outlined.

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26

Biljanovic, P., and T. Suligoj. "Horizontal current bipolar transistor (HCBT): a new concept of silicon bipolar transistor technology." IEEE Transactions on Electron Devices 48, no. 11 (2001): 2551–54. http://dx.doi.org/10.1109/16.960381.

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27

EDWARDS, PAUL J. "SEMICONDUCTOR JUNCTION NOISE REVISITED: WHERE HAVE ALL THE PHYSICAL NOISE SOURCES GONE?" Fluctuation and Noise Letters 01, no. 03 (September 2001): C15—C19. http://dx.doi.org/10.1142/s0219477501000421.

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The distinction between "physical" and "equivalent" noise sources in bipolar junction transistors and other semiconductor devices has become blurred in the current engineering textbooks. An unfortunate consequence of this is the emergence in the literature of fictitious noise sources such as the "the collector-current shot noise" and the "base-current shot noise". These are often assigned a physical reality and incorrectly treated as real physical noise sources, independent of circuit topology. Text-books have encouraged successive generations of students in this belief. Non-physical noise sources such as these are convenient and legitimate, even essential, for the effective modeling and simulation of circuit noise. However their naïve use in teaching and research is likely to continue to give rise to fallacious concepts and misleading conclusions. The physical. The physical modeling of the light-emitting diode, the photon transport transistor and the bipolar junction transistor are briefly discussed to illustrate this view.

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28

Silard, Andrei P., and Gabriel Nani. "TILBW Bipolar Power Switching Transistor." Japanese Journal of Applied Physics 28, Part 2, No. 3 (March 20, 1989): L356—L357. http://dx.doi.org/10.1143/jjap.28.l356.

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29

Chen, J., T. Won, M. S. Ünlü, H. Morkoç, and D. Verret. "GaAs‐Si heterojunction bipolar transistor." Applied Physics Letters 52, no. 10 (March 7, 1988): 822–24. http://dx.doi.org/10.1063/1.99295.

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30

Jingming Xu and M. Shur. "A tunneling emitter bipolar transistor." IEEE Electron Device Letters 7, no. 7 (July 1986): 416–18. http://dx.doi.org/10.1109/edl.1986.26421.

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31

Chand, Naresh, Tim Henderson, Russ Fischer, William Kopp, Hadis Morkoç, and Lawrence J. Giacoletto. "ApnpAlGaAs/GaAs heterojunction bipolar transistor." Applied Physics Letters 46, no. 3 (February 1985): 302–4. http://dx.doi.org/10.1063/1.95666.

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Hueting, R. J. E., S. E. J. Vincent, J. G. Bomer, R. G. P. Sanders, and W. Olthuis. "Ion-Sensitive Gated Bipolar Transistor." IEEE Transactions on Electron Devices 66, no. 10 (October 2019): 4354–60. http://dx.doi.org/10.1109/ted.2019.2933666.

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Daiguji, Hirofumi, Yukiko Oka, and Katsuhiro Shirono. "Nanofluidic Diode and Bipolar Transistor." Nano Letters 5, no. 11 (November 2005): 2274–80. http://dx.doi.org/10.1021/nl051646y.

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34

Persson, Stefan, Mouhine Fjer, Enrique Escobedo-Cousin, Sarah H. Olsen, Bengt Gunnar Malm, Yong-Bin Wang, Per-Erik Hellström, Mikael Östling, and Anthony G. O'Neill. "Strained-Silicon Heterojunction Bipolar Transistor." IEEE Transactions on Electron Devices 57, no. 6 (June 2010): 1243–52. http://dx.doi.org/10.1109/ted.2010.2045667.

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35

McCarthy, L. S., P. Kozodoy, M. J. W. Rodwell, S. P. DenBaars, and U. K. Mishra. "AlGaN/GaN heterojunction bipolar transistor." IEEE Electron Device Letters 20, no. 6 (June 1999): 277–79. http://dx.doi.org/10.1109/55.767097.

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Castañer, Luis M., Ramon Alcubilla, and Anna Benavent. "Bipolar transistor vertical scaling framework." Solid-State Electronics 38, no. 7 (July 1995): 1367–71. http://dx.doi.org/10.1016/0038-1101(94)00254-d.

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Wu, Ming C., and W. T. Tsang. "Quantum‐switched heterojunction bipolar transistor." Applied Physics Letters 55, no. 17 (October 23, 1989): 1771–73. http://dx.doi.org/10.1063/1.102214.

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38

Raissi, F. "Josephson Fluxonic Bipolar Junction Transistor." IEEE Transactions on Appiled Superconductivity 14, no. 1 (March 2004): 87–93. http://dx.doi.org/10.1109/tasc.2004.824337.

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39

Gharekhanlou, B., S. B. Tousaki, and S. Khorasani. "Bipolar Transistor Based on Graphane." Journal of Physics: Conference Series 248 (November 1, 2010): 012061. http://dx.doi.org/10.1088/1742-6596/248/1/012061.

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Kumar, M. J., and D. J. Roulston. "Base etched selfaligned transistor technology for advanced polyemitter bipolar transistors." Electronics Letters 30, no. 10 (May 12, 1994): 819–20. http://dx.doi.org/10.1049/el:19940545.

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41

Ouchrif, Jihane, Abdennaceur Baghdad, Aicha Sshel, Abdelmajid Badri, and Abdelhakim Ballouk. "Investigation of the static current gain for InP/InGaAs single heterojunction bipolar transistor." Indonesian Journal of Electrical Engineering and Computer Science 13, no. 3 (March 1, 2019): 1345. http://dx.doi.org/10.11591/ijeecs.v13.i3.pp1345-1354.

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<p>Heterojunction Bipolar Transistors are being used increasingly in communication systems due to their electrical performances. They are considered as excellent electronic devices. This paper presents an investigation of the static current gain β based on two technological parameters related to the device geometry for InP/InGaAs Single Heterojunction Bipolar Transistor (SHBT). These parameters are the base width and the emitter length . We used Silvaco’s TCAD tools to design the device structure, and to extract the static current gain β from I-V output characteristics figures. According to this investigation, we determined the optimal values of the examined parameters which allow obtaining the highest static current gain β.</p>

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42

Gadgiev, H. M., Sh T. Ismailova, and P. A. Kurbanova. "Kurbanova. Design of energy-efficient high-speed computer equipment based on cost-effective light transistors." Herald of Dagestan State Technical University. Technical Sciences 47, no. 4 (January 21, 2021): 20–26. http://dx.doi.org/10.21822/2073-6185-2020-47-4-20-26.

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Objective. The article deals with the formation of cost-effective light transistors for creating high-speed energy-efficient computer structures that can solve numerous problems with high speed and accuracy. For this purpose, various types of semiconductor structures are used that can emit and absorb photons for receiving and transmitting digital information.Methods. The use of mirror electrodes allows for repeated re-reflection of the generated photons inside the light transistor to recover all the generated energy into electricity. This increases the energy efficiency of the transistor as a whole and allows implementing computer devices with high efficiency in solving various tasks.Results. Most of the useful energy of the information signal is transferred from one electrode to another, and the movement has a higher speed due to the use of photons, rather than drifting electrons, and this indirectly increases the speed of the light transistor by several orders of magnitude and effectively solves the problem of implementing more powerful and high-speed transistors with greater economic benefits.Conclusion. Prospects for the implementation of high-speed energy-efficient computer structures based on both bipolar transistors and unipolar transistors, as well as thyristors, lasers, and other semiconductor components in light-emitting structures have been developed.

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Božanić, Mladen, and Saurabh Sinha. "Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors." Sensors 19, no. 11 (May 29, 2019): 2454. http://dx.doi.org/10.3390/s19112454.

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This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according to the fmax and related metrics, the BiCMOS technology has the added advantage of lower cost and supporting a wider set of integrated component types. BiCMOS can thus be seen as an enabling factor for re-engineering of complete terahertz radar systems, for the first time fabricated as miniaturized monolithic integrated circuits. Rapid commercial deployment of monolithic terahertz radar chips, furthermore, depends on the accuracy of transistor modeling at these frequencies. Considerations such as fabrication and modeling of passives and antennas, as well as packaging of complete systems, are closely related to the two main contributions of this paper and are also reviewed here. Finally, this paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terahertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.

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Wu, Hongjun, Bangzheng Yin, and Zetao Chen. "Cross-platform Simulation of Bipolar Junction Transistor Electrical Principle." Journal of Physics: Conference Series 2068, no. 1 (October 1, 2021): 012035. http://dx.doi.org/10.1088/1742-6596/2068/1/012035.

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Abstract This paper designs a set of simulation method about bipolar junction transistor (short for ‘BJT’) electrical principle, which can be used as the foundation of cross-platform simulation of semiconductor electronic technology. Firstly, a mathematical model is established to simulate the amplification effect of bipolar junction transistor current control, the influence of Base current and Collector-Emitter Voltage on the working area of bipolar junction transistor. Secondly, interactive multimedia such as graphics, images and animation are used for simulation presentation through cross-platform software design method which is the mainstream internet web page interaction technology. Finally, a logic structure of the whole simulation software is designed, which presents data transmission, control workflow, relationship between each class and each layer in the simulation software.

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Jackson, M. C., R. D. Long, D. Lee, and N. J. Freeman. "Development of X-ray streak camera electronics at AWRE." Laser and Particle Beams 4, no. 1 (February 1986): 145–56. http://dx.doi.org/10.1017/s0263034600001695.

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The paper reviews a number of X-ray streak cameras developed at AWRE. These cameras are used to provide temporal and one-dimensional spatial or spectral information on X-rays emitted from laser produced plasmas. Two of these cameras have been designed to be combined with other diagnostic instrumentation; one with a Wolter X-ray microscope (×22 magnification) and the other with a Bragg diffraction crystal spectrometer. This latter instrument provides a few eV spectral resolution and ∼15 ps temporal resolution; a typical experimental application at the AWRE HELEN laser facility will be described. The paper describes the circuitry of the bipolar avalanche transistor ramp generator used to drive the streak plates of the cameras. Improvements to this include: (a) increasing the fastest streak rate to ∼10 ps mm−1 by a distributed capacitance network across each of the bipolar stacks of transistors, and (b) reducing the trigger jitter to approximately ±10 ps by the use of a new mix of transistors in the stack and a Raytheon RS 3500 avalanche transistor. Additional improvements have now been added. These include a ‘half-scan’ user facility to aid initial camera timing and direct switching to select the sweep rate of the camera.

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46

Hasan, Md Sakib, Samira Shamsir, Mst Shamim Ara Shawkat, Frances Garcia, and Syed K. Islam. "Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G4FET)." International Journal of High Speed Electronics and Systems 27, no. 03n04 (September 2018): 1840016. http://dx.doi.org/10.1142/s0129156418400165.

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This work presents multivariate regression polynomial as a versatile and efficient method for DC modeling of modern transistors with very different underlying physics including MOSFET (metal-oxide-semiconductor field-effect transistor), MESFET (metal–semiconductor field-effect transistor), HBT (heterojunction bipolar transistor), HEMT (High-electron-mobility transistor) and a novel silicon-on-insulator four-gate transistors (G4FET). A set of available data from analytic solution, TCAD simulation, and experimental measurements for different operating conditions is used to empirically determine the parameters of this model and a different set of test data is used to verify its predictive accuracy. The developed model expresses the drain current as a single multivariate regression polynomial with its validity spanning across different possible operating regions as long as the chosen independent variables lie within the range of training data set. The continuity of the resulting polynomial and its first and second order derivatives make it particularly suitable for implementation in a circuit simulator. The model also provides a method for further simplification based on prior knowledge of the underlying physical mechanism and shows excellent predictive capability for different kinds of devices. This can be very useful for modeling deep-submicron emerging devices for which any closed-form analytical solution is not yet available.

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47

Shakir, Muhammad, Shuo Ben Hou, and Carl Mikael Zetterling. "A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology." Materials Science Forum 963 (July 2019): 818–22. http://dx.doi.org/10.4028/www.scientific.net/msf.963.818.

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This work presents the design, in-house fabrication, and electrical characterization of a monolithic medium scale integrated (MSI) D-type flip-flop (DFF). It consists of 65 n-p-n bipolar transistors and 49 integrated resistors. The monolithic bipolar DFF is realized using basic gates by employing the structured way of implementation, whereas the basic gates are implemented by employing the conventional transistor-transistor logic (TTL). The positive-edge-triggered DFF, with synchronous active-low reset is characterized in the temperature range of 25-500 °C. The circuit has been tested in two modes of operation; data input mode and clock divider. Non-monotonous temperature dependence is observed for the flip-flop propagation-delay clock-to-output (tPCQ), rise-time and fall-time; decreases with the temperature in the range 25 °C to 300 °C, while it increases in the range 300 °C to 500 °C. The transient response has also been measured at a clock frequency of 100 kHz. At T = 400 °C and VCC = 15 V, the DFF consumes minimum energy ≈ 234 nJ.

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OO, Myo, Nahrul Rashid, Julia Karim, Zin Mohamed, Rosminazuin Rahim, Amelia Azman, and Nurul Hasbullah. "Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation." Nuclear Technology and Radiation Protection 29, no. 1 (2014): 46–52. http://dx.doi.org/10.2298/ntrp1401046o.

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Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.

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Coquillat, D., V. Nodjiadjim, S. Blin, A. Konczykowska, N. Dyakonova, C. Consejo, P. Nouvel, et al. "High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors." International Journal of High Speed Electronics and Systems 25, no. 03n04 (September 2016): 1640011. http://dx.doi.org/10.1142/s0129156416400115.

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Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25–3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz.

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Barzdenas, Vaidotas, Gediminas Grazulevicius, John Liobe, Aleksandr Vasjanov, and Leonid Kladovscikov. "Verification of a Fabless Device Model Using TCAD Tools: from Bipolar Transistor Formation to I-V Characteristics Extraction." Ingeniería e Investigación 41, no. 3 (May 10, 2021): e88685. http://dx.doi.org/10.15446/ing.investig.v41n3.88685.

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This paper describes the analysis of processes used in microand nanoelectronic device manufacturing. It also presents an exemplary and novel laboratory exercise in which an epitaxial planar n + pn bipolar transistor with junction isolation is illustrated and analyzed stepbystep. Only seven photolithography steps are used to obtain this bipolar transistor structure: for buried layer formation, for junction transistor isolation and collectors regions formation, for base region formation, for emitter and collector n+ region formation, for contact windows, for first aluminum metallization, and, finally, for passivation. Silvaco TCAD software tools are used to implement all of these manufacturing processes and to simulate the resulting IV characteristics of all presented semiconductor structures. This type of laboratory work provides students with basic knowledge and a consistent understanding of bipolar transistor manufacturing, as well as facilitating theoretical understanding, analysis, and simulation of various semiconductor manufacturing processes without the need for costly and lengthy technological manufacturing experiments. This article also presents the conclusions and other benefits of such laboratory work, as well as possible recommendations for further improvement or expansion.

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