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Relevant bibliographies by topics / Bipolar transistors Junction transistors Silicon compounds

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Academic literature on the topic 'Bipolar transistors Junction transistors Silicon compounds'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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Journal articles on the topic "Bipolar transistors Junction transistors Silicon compounds"

1

Neugroschel, Arnost, Chih‐Tang Sah, and Michael S. Carroll. "Random telegraphic signals in silicon bipolar junction transistors." Applied Physics Letters 66, no. 21 (May 22, 1995): 2879–81. http://dx.doi.org/10.1063/1.113460.

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Cartagena, E. N., B. Offord, and G. Garcia. "Bipolar junction transistors fabricated in silicon-on-sapphire." Electronics Letters 28, no. 11 (May 21, 1992): 983–85. http://dx.doi.org/10.1049/el:19920625.

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Wu, Kunlin, Junjie Li, Dehui Zou, Yi Lu, Jiaming Feng, Xueyang Lv, Dong Qiu, Xiaoqiang Fan, Xianguo Xu, and Jian Wu. "Neutron flux effects in silicon based bipolar junction transistors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 913 (January 2019): 85–90. http://dx.doi.org/10.1016/j.nima.2018.10.037.

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Jang, Sheng-Lyang, and Kuang-Lang Chern. "Hot-carrier-induced photovoltage in silicon bipolar junction transistors." Solid-State Electronics 34, no. 12 (December 1991): 1387–92. http://dx.doi.org/10.1016/0038-1101(91)90034-v.

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Elamin, Abdenabi Ali, and Waell H. Alawad. "Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )." Journal of The Faculty of Science and Technology, no. 6 (January 12, 2021): 1–9. http://dx.doi.org/10.52981/jfst.vi6.597.

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This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result showed that, the saturation voltage VCE(sat) of Bipolar Junction Transistor decreased because of the gain degradation of the transistor and increased silicon resistivity, Another parameter of a bipolar junction transistor affected by ionizing radiation is a collector-base leakage current, a strong increase of the current is caused by the build-up charge near the junction.

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Dong, Kang Ning, Xi Jun Zhang, Jie Yang, and Zhe Yang. "Sensitive Ports under the Action of Different ESD Models of High-Frequency Low-Noise Silicon Bipolar Transistors." Advanced Materials Research 846-847 (November 2013): 551–54. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.551.

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In order to find the most sensitive port of some high-frequency low-noise silicon bipolar transistors, some electrostatic discharge (ESD) experiments were taken on three typical devices, which is beneficial to study the relevant law of ESDS (ESD sensitivity). Based on the experimental results, reverse-biased emitter-base junction was compared with reverse-biased collector-base junction about failure voltage under the action of HBM ESD, MM ESD and BMM ESD. The results show that the sensitive port is different for those mentioned silicon bipolar transistors under the action of different ESD models. Consequently, the most sensitive port of high-frequency low-noise silicon bipolar transistors may be variable for different ESD models.

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McNeill, N., B. H. Stark, S. J. Finney, D. Holliday, and H. Dymond. "Efficient base driver circuit for silicon carbide bipolar junction transistors." Electronics Letters 54, no. 25 (December 2018): 1450–52. http://dx.doi.org/10.1049/el.2018.7057.

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Zhu, Hui, Mark Sweet, and E. M. Sankara Narayanan. "Base drive energy recovery for a silicon bipolar junction transistors." IET Power Electronics 8, no. 12 (December 2015): 2429–34. http://dx.doi.org/10.1049/iet-pel.2014.0818.

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Liu, Chaoming, Xingji Li, Hongbin Geng, Erming Rui, Lixin Guo, Jianqun Yang, and Liyi Xiao. "The equivalence of displacement damage in silicon bipolar junction transistors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 677 (June 2012): 61–66. http://dx.doi.org/10.1016/j.nima.2012.02.045.

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Yuferev, V. S., M. E. Levinshtein, P. A. Ivanov, Q. J. Zhang, A. K. Agarwal, and J. W. Palmour. "Transient processes in high-voltage silicon carbide bipolar-junction transistors." Semiconductors 47, no. 8 (August 2013): 1068–74. http://dx.doi.org/10.1134/s1063782613080228.

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Dissertations / Theses on the topic "Bipolar transistors Junction transistors Silicon compounds"

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Lee, Hyung-Seok. "High power bipolar junction transistors in silicon carbide." Licentiate thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3854.

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Geil, Bruce Robert. "Fabrication and modeling of Silicon Carbide Bipolar Junction Transistors." College Park, Md. : University of Maryland, 2008. http://hdl.handle.net/1903/8244.

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Thesis (M.S.) -- University of Maryland, College Park, 2008.
Thesis research directed by: Dept. of Electrical and Computer Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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Buono, Benedetto. "Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320.

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The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. However, in order to compete on the market, it is crucial to a have high current gain and a breakdown voltage close to ideal. Moreover, the absence of conductivity modulation and long-term stability has to be solved. In this thesis, these topics are investigated comparing simulations and measurements. Initially, an efficient etched JTE has been simulated and fabricated. In agreement with the simulations, the fabricated diodes exhibit the highest BV of around 4.3 kV when a two-zone JTE is implemented. Furthermore, the simulations and measurements demonstrate a good agreement between the electric field distribution inside the device and the optical luminescence measured at breakdown. Additionally, an accurate model to simulate the forward characteristics of 4H-SiC BJTs is presented. In order to validate the model, the simulated current gains are compared with measurements at different temperatures and different base-emitter geometries. Moreover, the simulations and measurements of the on-resistance are compared at different base currents and different temperatures. This comparison, coupled with a detailed analysis of the carrier concentration inside the BJT, indicates that internal forward biasing of the base-collector junction limits the BJT to operate at high current density and low forward voltage drop simultaneously. In agreement with the measurements, a design with a highly-doped extrinsic base is proposed to alleviate this problem. In addition to the static characteristics, the comparison of measured and simulated switching waveforms demonstrates that the SiC BJT can provide fast switching speed when it acts as a unipolar device. This is crucial to have low power losses during transient. Finally, the long-term stability is investigated. It is observed that the electrical stress of the base-emitter diode produces current gain degradation; however, the degradation mechanisms are still unclear. In fact, the analysis of the measured Gummel plot suggests that the reduction of the carrier lifetime in the base-emitter region might be only one of the causes of this degradation. In addition, the current gain degradation due to ionizing radiation is investigated comparing the simulations and measurements. The simulations suggest that the creation of positive charge in the passivation layer can increase the base current; this increase is also observed in the electrical measurements.
QC 20120522

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Lee, Hyung-Seok. "Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, Stockholm : Kungliga Tekniska högskolan, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4623.

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Ghandi, Reza. "Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-29726.

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The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. However, to compete with other switching devices such as Field Effect Transistors (FETs) or IGBTs, it is necessary for a power SiC BJT to provide a high current gain to reduce the power required from the drive circuit. In this thesis implantation free 4H-SiC BJTs with linearly graded base layer have been demonstrated with common-emitter current gain of 50 and open-base breakdown voltage of 2700 V. Also an efficient junction termination extension (JTE) with 80% of theoretical parallel-plane breakdown voltage was analyzed by fabrication of high voltage PiN diodes to achieve an optimum dose of remaining JTE charge. Surface passivation of 4H-SiC BJT is an essential factor for efficient power BJTs. Therefore different passivation techniques were compared and showed that around 60% higher maximum current gain can be achieved by a newsurface passivation layer with low interface trap density that consists of PECVD oxide followed by post-deposition oxide anneal in N2O ambient. This surface passivation along with doublezone JTE were used for fabrication of high power BJTs that result in successful demonstration of 2800 V breakdown voltage for small area (0.3 × 0.3 mm) and large area (1.8 × 1.8 mm) BJTs with a maximum dc current gain of 55 and 52, respectively. The small area BJT showed RON = 4mΩcm2, while for the large are BJT RON = 6.8 mΩcm2. Finally, a Darlington transistor with a maximum current gain of 2900 at room temperature and 640 at 200 °C is reported. The high current gain of the Darlington transistor is achieved by optimum design for the ratio of the active area of the driver BJT to the output BJT.
QC 20110216

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Bellini, Marco. "Operation of silicon-germanium heterojunction bipolar transistors on." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28206.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Cressler, John D.; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen; Committee Member: Shen, Shyh-Chiang; Committee Member: Zhou, Hao Min.

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Shankar, Subramaniam. "Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34807.

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This thesis explores the critical advantages of using silicon-germanium (SiGe) HBTs for RF front-end design. The first chapter looks at the SiGe BiCMOS technology platform and its important performance metrics. The second chapter discusses ultra-wide tuneability and the critical role that this functionality can have on real world applications. The third chapter presents simulated and measured results of two wideband ring oscillators (8-18 GHz) designed and fabricated in the Jazz 120 BiCMOS platform. A 7-22 GHz wideband VGA in the 8HP platform is also presented further exemplifying the wideband capabilities of SiGe HBTs.

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Okuda, Takafumi. "Enhancement of Carrier Lifetimes in SiC and Fabrication of Bipolar Junction Transistors." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/202717.

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Salemi, Arash. "Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-197913.

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Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. However, in order to be fully competitive with unipolar devices, it is important to further improve the off-state and on-state characteristics, such as breakdown voltage, leakage current, common-emitter current gain, switching, current density, and ON-resistance. In order to achieve a high breakdown voltage with a low leakage current, an efficient and easy to fabricate junction edge protection or termination is needed. Among different proposed junction edge protections, a mesa design integrated with junction termination extensions (JTEs) is a powerful approach. In this work, implantation-free 4H-SiC BJTs in two classes of voltage, i.e., 6 kV-class and 15 kV-class with an efficient and optimized implantation-free junction termination (O-JTE) and multiple-shallow-trench junction termination extension (ST-JTE) are designed, fabricated and characterized. These terminations result in high termination efficiency of 92% and 93%, respectively. The 6 kV-class BJTs shows a maximum current gain of β = 44. A comprehensive study on the geometrical design is done in order to improve the on-state performances. For the first time, new cell geometries (square and hexagon) are presented for the SiC BJTs. The results show a significant improvement of the on-state characteristics because of a better utilization of the base area. At a given current gain, new cell geometries show a 42% higher current density and 21% lower ON-resistance. The results of this study, including an optimized fabrication process, are utilized in the 15 kV-class BJTs where a record high current gain of β = 139 is achieved. Ultra-high-voltage PiN diodes in two classes of voltage, i.e., 10+ kV using on-axis 4H-SiC and 15 kV-class off-axis 4H-SiC, are presented. O-JTE is utilized for 15 kV-class PiN diodes, while three steps ion-implantation are used to form the JTE in 10+ kV PiN diodes. Carbon implantation followed by high-temperature annealing is also performed for the 10+ kV PiN diodes in order to enhance the lifetime. Both type diodes depict conductivity modulation in the drift layer. No bipolar degradation is observed in 10+ kV PiN diodes.

QC 20161209

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10

Liu, Wei. "Electro-thermal simulations and measurements of silicon carbide power transistors." Doctoral thesis, Stockholm, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-86.

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Books on the topic "Bipolar transistors Junction transistors Silicon compounds"

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Silicon Heterostructure Devices. CRC, 2007.

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Book chapters on the topic "Bipolar transistors Junction transistors Silicon compounds"

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El-Kareh, Badih, and Lou N. Hutter. "Bipolar and Junction Field-Effect Transistors." In Silicon Analog Components, 151–219. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-15085-3_5.

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El-Kareh, Badih, and Lou N. Hutter. "Bipolar and Junction Field-Effect Transistors." In Silicon Analog Components, 147–204. New York, NY: Springer New York, 2015. http://dx.doi.org/10.1007/978-1-4939-2751-7_5.

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Balachandran, S., T. P. Chow, and Anant Agarwal. "Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors." In Silicon Carbide and Related Materials 2005, 1433–36. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1433.

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Nakamae, Masahiko. "Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors." In Ultra-Fast Silicon Bipolar Technology, 29–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-74360-3_2.

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Krishnaswami, Sumi, Anant Agarwal, James Richmond, Craig Capell, Sei Hyung Ryu, John Palmour, Bruce Geil, Dimos Katsis, and Charles J. Scozzie. "High Temperature Characterization of 4H-SiC Bipolar Junction Transistors." In Silicon Carbide and Related Materials 2005, 1437–40. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1437.

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Lenahan, Patrick M., N. T. Pfeiffenberger, T. G. Pribicko, and Aivars J. Lelis. "Identification of Deep Level Defects in SiC Bipolar Junction Transistors." In Silicon Carbide and Related Materials 2005, 567–70. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.567.

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"SiC Bipolar Junction Transistors." In Gallium Nitride and Silicon Carbide Power Devices, 437–54. WORLD SCIENTIFIC, 2016. http://dx.doi.org/10.1142/9789813109414_0015.

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Conference papers on the topic "Bipolar transistors Junction transistors Silicon compounds"

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Muter, Ulf, Christian Sammler, Sebastian Fahlbusch, Sebastian Klotzer, and Klaus F. Hoffmann. "Comparison of driving concepts for silicon carbide bipolar junction transistors." In 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe). IEEE, 2016. http://dx.doi.org/10.1109/epe.2016.7695636.

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Tolstoy, Georg, Dimosthenis Peftitsis, Jacek Rabkowski, Hans-Peter Nee, and Patrick R. Palmer. "A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors." In 2013 IEEE ECCE Asia Downunder (ECCE Asia 2013). IEEE, 2013. http://dx.doi.org/10.1109/ecce-asia.2013.6579182.

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Jaeger, R. C., S. Hussain, G. Niu, P. Gnanachchelvi, J. C. Suhling, B. M. Wilamowski, and M. C. Hamilton. "Characterization of residual stress levels in complementary bipolar junction transistors on (100) silicon." In 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM. IEEE, 2015. http://dx.doi.org/10.1109/bctm.2015.7340582.

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Oueslati, Mehrez, Hatem Garrab, Atef Jedidi, and Kamel Besbes. "The advantage of silicon carbide material in designing of power bipolar junction transistors." In 2015 12th International Multi-Conference on Systems, Signals & Devices (SSD). IEEE, 2015. http://dx.doi.org/10.1109/ssd.2015.7348149.

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Huang, Guo-Wei, An-Sam Peng, Kun-Ming Chen, and Li-Hsin Chang. "Dynamic Thermal Characterization and Modeling of Silicon Bipolar Junction Transistors using Pulsed RF Measurement System." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.p11-5l.

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Hussain, Safina, Parameshwaran Gnanachchelvi, Jeffrey C. Suhling, Richard C. Jaeger, Michael C. Hamilton, and Bogdan M. Wilamowski. "The Influence of Uniaxial Normal Stress on the Performance of Vertical Bipolar Transistors." In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73233.

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In this paper, we have explored the response of bipolar junction transistors (BJT) to the controlled application of mechanical stress. Mechanical strains and stresses are developed during the fabrication, assembly and packaging of the integrated circuit (IC) chips. Due to these stresses and strains, it has been observed by many researchers that changes can occur in the electrical performance of both analog and digital devices. Stress-induced device parametric shifts affect the performance of analog circuits that depend upon precise matching of bipolar and/or MOS devices, and can cause them to operate out of specifications. In the past the authors have extensively investigated the stress effects on resistors embedded on integrated chips and were successful in characterizing die stresses for various packaging architectures. We have also observed stress effects on diodes, field effect transistors (FETs), van der Pauw structures and CMOS sensor arrays. In this present work, the stress dependence of the electrical behavior of bipolar transistors has been investigated. Test structures have been utilized to characterize the stress sensitivity of vertical bipolar devices fabricated on (100) silicon wafers. In the experiments, uniaxial normal stresses were applied to silicon wafer strips using a four-point-bending fixture. An approximate theory has also been developed for stress-induced changes in the current gain of bipolar junction transistors. Both the theoretical and experimental results show similar trend for DC current gain vs. stress plots. Multi-Physics based finite element simulations (coupled electro-mechanical-thermal) have been performed to understand the device level mechanisms that cause the stress induced changes in the BJTs and also to characterize and model stress dependence of fundamental silicon material parameters such as bandgap, intrinsic carrier concentration, and electron/hole mobilities. In the future, the developed formulations can be applied to theoretically optimize transistor design, placement, orientation, and processing to minimize the impact of fabrication and packaging induced die stresses.

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Acharya, Palash V., Vaibhav Bahadur, Robert Hebner, Abdelhamid Ouroua, and Shannon Strank. "Assessing the Performance of Advanced Cooling Techniques on Thermal Management of Next-Generation Power Electronics." In ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/ipack2019-6311.

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Abstract Rapid miniaturization alongwith increasing heat loads in power electronics devices like insulated-gate bipolar transistors (IGBTs) have necessitated the need for advanced thermal management technologies in the packaging of these devices. This study quantifies the benefits of key advanced thermal management solutions for packaging of power electronics packages. Thermal resistance network modeling is used to estimate the maximum heat flux that can be dissipated by an IGBT package, while maintaining the junction temperature below 125 °C and 200 °C for silicon and silicon carbide (wide bandgap material) devices, respectively. While the model is completely analytical, it does address important complexities associated with heat flow in packages via the use of a sub-model to account for thermal spreading. The advanced cooling technologies evaluated in this study include the use of high thermal conductivity polymer heat sinks, double-sided heat sinking of packages, liquid cooling (single and two-phase), jet impingement and spray cooling. Additionally, combinations of these cooling technologies are evaluated as well. The heat dissipation achievable from these technologies is compared with that from an air cooled copper heat sink (baseline). The results of this study provide insights and a starting point for selecting thermal management technologies (or combinations) based on the heat dissipation requirements of power electronics packages.

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