Dissertations / Theses on the topic 'Bipolar transistors Junction transistors Silicon compounds'
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Lee, Hyung-Seok. "High power bipolar junction transistors in silicon carbide." Licentiate thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3854.
Full textGeil, Bruce Robert. "Fabrication and modeling of Silicon Carbide Bipolar Junction Transistors." College Park, Md. : University of Maryland, 2008. http://hdl.handle.net/1903/8244.
Full textBuono, Benedetto. "Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320.
Full textLee, Hyung-Seok. "Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, Stockholm : Kungliga Tekniska högskolan, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4623.
Full textGhandi, Reza. "Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-29726.
Full textBellini, Marco. "Operation of silicon-germanium heterojunction bipolar transistors on." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28206.
Full textShankar, Subramaniam. "Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34807.
Full textOkuda, Takafumi. "Enhancement of Carrier Lifetimes in SiC and Fabrication of Bipolar Junction Transistors." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/202717.
Full textSalemi, Arash. "Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-197913.
Full textLiu, Wei. "Electro-thermal simulations and measurements of silicon carbide power transistors." Doctoral thesis, Stockholm, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-86.
Full textSandén, Martin. "Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3203.
Full textGrens, Curtis Morrow. "Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29622.
Full textStein, Félix. "SPICE Modeling of TeraHertz Heterojunction bipolar transistors." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0281/document.
Full textTolstoy, Georg. "High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters." Doctoral thesis, KTH, Elektrisk energiomvandling, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-168163.
Full textPejnefors, Johan. "Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3214.
Full textSutton, Akil Khamisi. "Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29778.
Full textAsada, Satoshi. "Improvement of ON-Characteristics in SiC Bipolar Junction Transistors by Structure Designing Based on Analyses of Material Properties and Carrier Recombination." Kyoto University, 2019. http://hdl.handle.net/2433/242510.
Full textSuvanam, Sethu Saveda. "Radiation Hardness of 4H-SiC Devices and Circuits." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-199907.
Full textAhmed, Adnan. "Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7227.
Full textUsman, Muhammad. "Impact of Ionizing Radiation on 4H-SiC Devices." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763.
Full textEricson, Matthias, and Johan Silverudd. "Design of measurement circuits for SiC experiment : KTH student satellite MIST." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-191137.
Full textMontes, Enrique J. "Single event upset mechanisms for low-energy-deposition events in SiGe HBTs." Diss., 2007. http://etd.library.vanderbilt.edu/ETD-db/available/etd-12072007-180707/.
Full text陳光郎. "Light emission in silicon bipolar junction transistors." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/86899593008366038196.
Full text蔡政澤. "A Study of High Current Characteristics of Silicon Bipolar Junction Transistors." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/86234664230821293145.
Full text邱進峰. "The implementation of coms silicon retina systems using multi-emitter bipolar junction transistors and their applications to image processing." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/21646022951383044397.
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