Dissertations / Theses on the topic 'Bipolar transistors Junction transistors Silicon compounds'
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Lee, Hyung-Seok. "High power bipolar junction transistors in silicon carbide." Licentiate thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3854.
Full textGeil, Bruce Robert. "Fabrication and modeling of Silicon Carbide Bipolar Junction Transistors." College Park, Md. : University of Maryland, 2008. http://hdl.handle.net/1903/8244.
Full textThesis research directed by: Dept. of Electrical and Computer Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Buono, Benedetto. "Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-95320.
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Lee, Hyung-Seok. "Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors." Doctoral thesis, Stockholm : Kungliga Tekniska högskolan, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4623.
Full textGhandi, Reza. "Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-29726.
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Bellini, Marco. "Operation of silicon-germanium heterojunction bipolar transistors on." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28206.
Full textCommittee Chair: Cressler, John D.; Committee Member: Papapolymerou, John; Committee Member: Ralph, Stephen; Committee Member: Shen, Shyh-Chiang; Committee Member: Zhou, Hao Min.
Shankar, Subramaniam. "Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34807.
Full textOkuda, Takafumi. "Enhancement of Carrier Lifetimes in SiC and Fabrication of Bipolar Junction Transistors." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/202717.
Full textSalemi, Arash. "Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-197913.
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Liu, Wei. "Electro-thermal simulations and measurements of silicon carbide power transistors." Doctoral thesis, Stockholm, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-86.
Full textSandén, Martin. "Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3203.
Full textGrens, Curtis Morrow. "Operating voltage constraints and dynamic range in advanced silicon-germanium HBTs for high-frequency transceivers." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29622.
Full textCommittee Chair: Cressler, John; Committee Member: Gerhardt, Rosario; Committee Member: Ingram, Mary Ann; Committee Member: Papapolymerou, John; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Stein, Félix. "SPICE Modeling of TeraHertz Heterojunction bipolar transistors." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0281/document.
Full textThe aim of BiCMOS technology is to combine two different process technologies intoa single chip, reducing the number of external components and optimizing power consumptionfor RF, analog and digital parts in one single package. Given the respectivestrengths of HBT and CMOS devices, especially high speed applications benefit fromadvanced BiCMOS processes, that integrate two different technologies.For analog mixed-signal RF and microwave circuitry, the push towards lower powerand higher speed imposes requirements and presents challenges not faced by digitalcircuit designs. Accurate compact device models, predicting device behaviour undera variety of bias as well as ambient temperatures, are crucial for the development oflarge scale circuits and create advanced designs with first-pass success.As technology advances, these models have to cover an increasing number of physicaleffects and model equations have to be continuously re-evaluated and adapted. Likewiseprocess scaling has to be verified and reflected by scaling laws, which are closelyrelated to device physics.This thesis examines the suitability of the model formulation for applicability to production-ready SiGe HBT processes. A derivation of the most recent model formulationimplemented in HICUM version L2.3x, is followed by simulation studies, whichconfirm their agreement with electrical characteristics of high-speed devices. Thefundamental geometry scaling laws, as implemented in the custom-developed modellibrary, are described in detail with a strong link to the specific device architecture.In order to correctly determine the respective model parameters, newly developed andexisting extraction routines have been exercised with recent HBT technology generationsand benchmarked by means of numerical device simulation, where applicable.Especially the extraction of extrinsic elements such as series resistances and parasiticcapacitances were improved along with the substrate network.The extraction steps and methods required to obtain a fully scalable model library wereexercised and presented using measured data from a recent industry-leading 55nmSiGe BiCMOS process, reaching switching speeds in excess of 300GHz. Finally theextracted model card was verified for the respective technology
Tolstoy, Georg. "High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters." Doctoral thesis, KTH, Elektrisk energiomvandling, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-168163.
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Pejnefors, Johan. "Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3214.
Full textThis thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. The growthkinetics and P incorporation was studied for amorphous Si filmgrowth. Hydrogen (H) incorporated in the as-deposited films wasrelated to growth kinetics and the energy for H2desorption was extracted. Film properties such asresistivity, mobility, carrier concentration and grain growthwere studied after crystallization using either furnaceannealing or rapid thermal annealing (RTA). In order tointegrate an epitaxial base, non-selective epitaxial growth(NSEG) of Si and SiGe in a lamp-heated single-waferreduced-pressure CVD reactor was examined. The growth kineticsfor Si epitaxy and poly-Si deposition showed a differentdependence on the deposition conditions i.e. temperature andpressure. The growth rate difference was mainly due to growthkinetics rather than wafer surface emissivity effects. However,it was observed that the growth rate for Si epitaxy and poly-Sideposition was varying during growth and the time-dependencewas attributed to wafer surface emissivity variations. A modelto describe the emissivity effects was established, taking intoconsideration kinetics and the reactor heating mechanisms suchas heat absorption, emission andconduction. Growth ratevariations in opening of different sizes (local loading) andfor different oxide surface coverage (global loading) wereinvestigated. No local loading effects were observed, whileglobal loading effects were attributed to chemical as well astemperature effects. Finally, misfit dislocations formed in theSiGe epitaxy during NSEG were found to originate from theinterface between the epitaxial and polycrystalline regions.The dislocations tended to propagate across the activearea.
Keywords:chemical vapor deposition (CVD), bipolarjunction transistor (BJT), heterojunction bipolar transistor(HBT), silicon-germanium (SiGe), epitaxy, poly-Si emitter,in situdoping, non-selective epitaxy (NSEG), loadingeffect, emissivity effect
Sutton, Akil Khamisi. "Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29778.
Full textCommittee Chair: Cressler, John; Committee Member: Deo, Chaitanya; Committee Member: Doolittle, Alan; Committee Member: Keezer, David; Committee Member: May, Gary; Committee Member: Papapolymerou, John. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Asada, Satoshi. "Improvement of ON-Characteristics in SiC Bipolar Junction Transistors by Structure Designing Based on Analyses of Material Properties and Carrier Recombination." Kyoto University, 2019. http://hdl.handle.net/2433/242510.
Full textSuvanam, Sethu Saveda. "Radiation Hardness of 4H-SiC Devices and Circuits." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-199907.
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Ahmed, Adnan. "Study of Low-Temperature Effects in Silicon-Germanium Heterojunction Bipolar Transistor Technology." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7227.
Full textUsman, Muhammad. "Impact of Ionizing Radiation on 4H-SiC Devices." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763.
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Ericson, Matthias, and Johan Silverudd. "Design of measurement circuits for SiC experiment : KTH student satellite MIST." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-191137.
Full textSiC in Space är ett av experimenten på KTHs miniatyrsatellit, MIST. Experimentet utför test på bipolära transistorer av kisel och kiselkarbid. Detta examensarbete förklarar hur transistorns karakteristik kan mätas med analoga kretsar. Den framtagna kretsdesignen kommer att fungera som en prototyp till SiC in Space-experimentet. Prototypen mäter basströmmen, kollektorströmmen, bas-emitter-spänningen samt temperaturen för transistorn. Detta examensarbete förklarar hur en testkrets kan designas. Den valda designen byggs i inkrementella steg, där varje designval förklaras. Olika designer har utvecklats. Designerna har verifierats genom simuleringar. Vi har också konstruerat och testat tre olika prototyper på kopplingsdäck och kretskort.
Montes, Enrique J. "Single event upset mechanisms for low-energy-deposition events in SiGe HBTs." Diss., 2007. http://etd.library.vanderbilt.edu/ETD-db/available/etd-12072007-180707/.
Full text陳光郎. "Light emission in silicon bipolar junction transistors." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/86899593008366038196.
Full text蔡政澤. "A Study of High Current Characteristics of Silicon Bipolar Junction Transistors." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/86234664230821293145.
Full text國立臺灣科技大學
工程技術研究所
83
The advance of bipolar junction transistors has led to a drastic increase in the operating speed and operating current density of BJT. We reformulated the boundary conditions of metallurgical junction by taking into account the effect of nonequilibrium contact, and found that the nonequilibrium contact indeed affect the current of silicon bipolar semiconductor devices, it increases the current density. The effects of series resistance and the nonequilibrium contact are present at high level injection. If we neglect the latter we tend to underestimate the value of series resistance. The a.c. capacitance could become inductive at high forward-bias voltage. The nonequilibrium contact could affect the a.c.capacitance, and developed a model to calculate the a.c. capacitances of diode and BJT.
邱進峰. "The implementation of coms silicon retina systems using multi-emitter bipolar junction transistors and their applications to image processing." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/21646022951383044397.
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