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Journal articles on the topic 'Bipolar transistors Junction transistors Silicon compounds'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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1

Neugroschel, Arnost, Chih‐Tang Sah, and Michael S. Carroll. "Random telegraphic signals in silicon bipolar junction transistors." Applied Physics Letters 66, no. 21 (May 22, 1995): 2879–81. http://dx.doi.org/10.1063/1.113460.

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2

Cartagena, E. N., B. Offord, and G. Garcia. "Bipolar junction transistors fabricated in silicon-on-sapphire." Electronics Letters 28, no. 11 (May 21, 1992): 983–85. http://dx.doi.org/10.1049/el:19920625.

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3

Wu, Kunlin, Junjie Li, Dehui Zou, Yi Lu, Jiaming Feng, Xueyang Lv, Dong Qiu, Xiaoqiang Fan, Xianguo Xu, and Jian Wu. "Neutron flux effects in silicon based bipolar junction transistors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 913 (January 2019): 85–90. http://dx.doi.org/10.1016/j.nima.2018.10.037.

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4

Jang, Sheng-Lyang, and Kuang-Lang Chern. "Hot-carrier-induced photovoltage in silicon bipolar junction transistors." Solid-State Electronics 34, no. 12 (December 1991): 1387–92. http://dx.doi.org/10.1016/0038-1101(91)90034-v.

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5

Elamin, Abdenabi Ali, and Waell H. Alawad. "Effect of Gamma Radiation on Characteristic of bipolar junction Transistors (BJTs )." Journal of The Faculty of Science and Technology, no. 6 (January 12, 2021): 1–9. http://dx.doi.org/10.52981/jfst.vi6.597.

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This paper describes the effects of 60Cogamma radiation hardness of characteristic and parameters of Bipolar Junction Transistors in order to analyze the performance changes of the individual devices used in nuclear field. Bipolar Junction Transistor (BJT) of the type (BC-301) (npn) silicon, Transistor was irradiated by gamma radiation using 60Cosource at different doses (1, 2, 3, 4, and 5) KGy. The characteristics and parameter of Bipolar Junction Transistor was studied before and after irradiated by using Transistor Characteristics Apparatus with regulated power supplies. Obtained result showed that, the saturation voltage VCE(sat) of Bipolar Junction Transistor decreased because of the gain degradation of the transistor and increased silicon resistivity, Another parameter of a bipolar junction transistor affected by ionizing radiation is a collector-base leakage current, a strong increase of the current is caused by the build-up charge near the junction.

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6

Dong, Kang Ning, Xi Jun Zhang, Jie Yang, and Zhe Yang. "Sensitive Ports under the Action of Different ESD Models of High-Frequency Low-Noise Silicon Bipolar Transistors." Advanced Materials Research 846-847 (November 2013): 551–54. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.551.

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In order to find the most sensitive port of some high-frequency low-noise silicon bipolar transistors, some electrostatic discharge (ESD) experiments were taken on three typical devices, which is beneficial to study the relevant law of ESDS (ESD sensitivity). Based on the experimental results, reverse-biased emitter-base junction was compared with reverse-biased collector-base junction about failure voltage under the action of HBM ESD, MM ESD and BMM ESD. The results show that the sensitive port is different for those mentioned silicon bipolar transistors under the action of different ESD models. Consequently, the most sensitive port of high-frequency low-noise silicon bipolar transistors may be variable for different ESD models.

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7

McNeill, N., B. H. Stark, S. J. Finney, D. Holliday, and H. Dymond. "Efficient base driver circuit for silicon carbide bipolar junction transistors." Electronics Letters 54, no. 25 (December 2018): 1450–52. http://dx.doi.org/10.1049/el.2018.7057.

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8

Zhu, Hui, Mark Sweet, and E. M. Sankara Narayanan. "Base drive energy recovery for a silicon bipolar junction transistors." IET Power Electronics 8, no. 12 (December 2015): 2429–34. http://dx.doi.org/10.1049/iet-pel.2014.0818.

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9

Liu, Chaoming, Xingji Li, Hongbin Geng, Erming Rui, Lixin Guo, Jianqun Yang, and Liyi Xiao. "The equivalence of displacement damage in silicon bipolar junction transistors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 677 (June 2012): 61–66. http://dx.doi.org/10.1016/j.nima.2012.02.045.

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10

Yuferev, V. S., M. E. Levinshtein, P. A. Ivanov, Q. J. Zhang, A. K. Agarwal, and J. W. Palmour. "Transient processes in high-voltage silicon carbide bipolar-junction transistors." Semiconductors 47, no. 8 (August 2013): 1068–74. http://dx.doi.org/10.1134/s1063782613080228.

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11

Bielejec, E., G. Vizkelethy, N. R. Kolb, D. B. King, and B. L. Doyle. "Damage Equivalence of Heavy Ions in Silicon Bipolar Junction Transistors." IEEE Transactions on Nuclear Science 53, no. 6 (December 2006): 3681–86. http://dx.doi.org/10.1109/tns.2006.886231.

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12

Sundaresan, Siddarth, Ranbir Singh, and R. Wayne Johnson. "SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (January 1, 2012): 000162–66. http://dx.doi.org/10.4071/hitec-2012-wa15.

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1200 V/ 3 mm2 active-area SiC “Super” Junction Transistors (SJTs) display current gains as high as 88 and majority carrier operation up to 250 °C. The SJT operation shifts from purely unipolar to bipolar-mode at temperatures ≥ 300 °C. The leakage currents at a blocking voltage of 1200 V remain below 100 μA, even at 325 °C. Temperature-independent turn-on and turn-off times < 15 ns are measured up to 250 °C. A short-circuit withstand time of 22 μs at VDS=800 V, and a single-pulse avalanche energy of 20.4 mJ are measured. No degradation of the blocking I-V characteristics was observed after a 934 hour repetitive avalanche stress test.

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13

Carroll, M. S., A. Neugroschel, and Chih-Tang Sah. "Degradation of silicon bipolar junction transistors at high forward current densities." IEEE Transactions on Electron Devices 44, no. 1 (1997): 110–17. http://dx.doi.org/10.1109/16.554801.

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14

Tolstoy, Georg, Dimosthenis Peftitsis, Jacek Rabkowski, Patrick R. Palmer, and Hans-Peter Nee. "A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors." IEEE Transactions on Power Electronics 29, no. 5 (May 2014): 2408–17. http://dx.doi.org/10.1109/tpel.2013.2274331.

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15

VANDAMME, L. K. J., and GY TREFÁN. "A REVIEW OF 1/f NOISE IN TERMS OF MOBILITY FLUCTUATIONS AND WHITE NOISE IN MODERN SUBMICRON BIPOLAR TRANSISTORS — BJTs AND HBTs." Fluctuation and Noise Letters 01, no. 04 (December 2001): R175—R199. http://dx.doi.org/10.1142/s0219477501000457.

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Experimental studies on low frequency noise in bipolar junction transistors (BJT) including polysilicon emitter, hetero-junction bipolar transistors (HBTs) and silicon-germanium hetero-junction transistors (SiGe HBTs) are reviewed. The 1/f noise is treated in terms of mobility fluctuations. The validity of a new empirical relation between the 1/f noise corner frequency fc (the frequency where the 1/f noise and shot noise are equal) and the peak cutoff frequency frpeak is investigated. The experimental procedure to investigate the most dominant low-frequency noise source in the equivalent circuit is described. At medium frequencies, the white noise becomes dominant and the noise figure is calculated taking into account the emitter and base series resistance.

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16

Bödeker, Christian, Sarah Rugen, and Nando Kaminski. "Dynamic Voltage Rise Control (DVRC) Applied to SiC Bipolar Junction Transistors." Materials Science Forum 821-823 (June 2015): 826–29. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.826.

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Considering the development of faster power electronic switches, especially silicon carbide (SiC) devices, parasitic elements, such as stray inductances and capacitances, become more and more crucial. Overvoltages caused by stray inductances in combination with fast switching transients can destroy the devices at turn-off. In this paper the implementation of the DVRC circuit for silicon carbide bipolar junction transistors (BJTs) is investigated. The DUT was Fairchild`s FSICBH057A120 (VCES= 1200 V, Ron= 57 mΩ).

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17

Lee, Hyung Seok, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, and Jun Lu. "Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices." Materials Science Forum 527-529 (October 2006): 887–90. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.887.

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One important challenge in SiC Bipolar Junction Transistor (BJT) fabrication is to form good ohmic contacts to both n-type and p-type SiC. In this paper, we have examined contact study in a SiC BJT process with sputter deposition of titanium tungsten contacts to both n-type and p-type regions followed by annealing at different temperatures between 750 oC and 950 oC. The contacts were characterized using linear transmission line method (LTLM) structures. To see the formation of compound phases, X-ray Diffraction (XRD) θ-2θ scans were performed before and after annealing. The results indicate that 5 minutes annealing at 950 oC of the n+ contact is sufficient whereas the p+ contacts remain non-ohmic after 30 minutes annealing. The n+ emitter structure contact resistivity after 5 min annealing with 750 oC and 950 oC was 1.08 × 10-3 5cm2 and 4.08 × 10-4 5cm2, respectively. Small amorphous regions of silicon and carbon as well as titanium tungsten carbide regions were observed by high-resolution transmission electron microscopy (HRTEM), whereas less carbide formation and no amorphous regions were found in a sample with unsuccessful formation of TiW ohmic contacts.

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18

Khadir, Abdelkader, Nouredine Sengouga, and Mohamed Kamel Abdelhafidi. "Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors." Annals of West University of Timisoara - Physics 61, no. 1 (December 1, 2019): 22–32. http://dx.doi.org/10.2478/awutp-2019-0002.

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AbstractThe effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.

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19

Gnanachchelvi, P., R. C. Jaeger, B. M. Wilamowski, G. Niu, S. Hussain, J. C. Suhling, and M. C. Hamilton. "Performance Enhancement in Bipolar Junction Transistors Using Uniaxial Stress on (100) Silicon." IEEE Transactions on Electron Devices 63, no. 7 (July 2016): 2643–49. http://dx.doi.org/10.1109/ted.2016.2560899.

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20

Gao, Guang‐bo, Zhi‐fang Fan, D. L. Blackburn, M. S. Ünlü, J. Chen, K. Adomi, and H. Morkoç. "Uniform junction temperature AlGaAs/GaAs power heterojunction bipolar transistors on silicon substrates." Applied Physics Letters 58, no. 10 (March 11, 1991): 1068–70. http://dx.doi.org/10.1063/1.104373.

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21

Black, A., C. Courville, G. Schultheis, and H. Heinrich. "Optical sampling of GHz charge density modulation in silicon bipolar junction transistors." Electronics Letters 23, no. 15 (1987): 783. http://dx.doi.org/10.1049/el:19870555.

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22

Johannesson, Daniel, Muhammad Nawaz, and Hans Peter Nee. "TCAD Model Calibration of High Voltage 4H-SiC Bipolar Junction Transistors." Materials Science Forum 963 (July 2019): 670–73. http://dx.doi.org/10.4028/www.scientific.net/msf.963.670.

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In this project, a Technology CAD (TCAD) model has been calibrated and verified against experimental data of a 15 kV silicon carbide (SiC) bipolar junction transistor (BJT). The device structure of the high voltage BJT has been implemented in the Synopsys Sentaurus TCAD simulation platform and design of experiment simulations have been performed to extract and fine-tune device parameters and 4H-SiC material parameters to accurately reflect the 15 kV SiC BJT experimental results. The set of calibrated TCAD parameters may serve as a base for further investigations of various SiC device design and device operation in electrical circuits.

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23

Odzhaev, V. B., A. K. Panfilenko, A. N. Pyatlitski, V. S. Prosolovich, S. V. Shvedau, V. A. Filipenya, V. Yu Yavid, and Yu N. Yankovsky. "INVESTIGATION OF INFLUENCE OF TECHNOLOGICAL IMPURITIES ON THE I–V CHARACTERISTICS OF THE BIPOLAR n–p–n-TRANSISTOR." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 63, no. 2 (July 3, 2018): 244–49. http://dx.doi.org/10.29235/1561-8358-2018-63-2-244-249.

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Contamination of the monocrystal silicon with technological impurities in the devices fabrication process exerts a considerable influence on the electro-physical characteristics of the bipolar n–p–n-transistors. Revelation of the causes of the labile reproducibility of the basic characteristics of the bipolar planar n–p–n-transistors is vital for the purpose of establishing the factors, determining reliability and stability of the operational parameters of the integrated circuits. There were investigated I–V characteristics of the various lots of the bipolar n–p–n-transistors, fabricated under the epitaxialplanar technology as per the similar process charts with the identical used technological materials, however, at different times. It is established that the electro-physical characteristics of the bipolar n–p–n-transistors substantially depend on the contents of the technological impurities in the substrate material. Availability of the high concentration of the generation-recombination centers, related to the metallic impurities, results both in increase of the reverse current of the collector – base junction of the transistors and the significant reduction of the breakdown voltage of the collector junction. The most probable cause of deterioration of the electro-physical parameters of the bipolar n–p–n-transistors is the material contamination with the technological impurities (such, as Fe, Cl, Ca, Cu, Zn and others) during the production process of the devices fabrication. The sources of impurity may be both the components and sub-assemblies of the technological units and the materials and reagents under usage.

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24

Richmond, Jim, Sei-Hyung Ryu, Qingchun (Jon) Zhang, Brett Hull, Mrinal Das, Albert Burk, Anant Agarwal, and John Palmour. "Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000136–43. http://dx.doi.org/10.4071/hitec-jrichmond-tp21.

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Power devices based on Silicon Carbide (SiC) have unmatched potential for extending the operational temperature range of power electronics well past what is possible with silicon devices. SiC JBS diodes are already demonstrating part of that potential but the full benefit will not be realized until a SiC power switch is available. Recently, normally off SiC unipolar and bipolar switching devices have become available with the manufacture of 1200V, 20A MOSFETs and 1200V, 20A bipolar junction transistors (BJT). While both of these device types have undergone considerable study, most of this characterization has been conducted in the normal commercial temperature range which has an upper limit of 150 – 175°C. The SiC BJT is considered to be a superior device for high temperature operation due to its lower on-state voltage and increased reliability due to it not having a gate oxide. As presented, the advantages of the SiC BJT over the SiC MOSFET are not as great as expected and may not warrant the increased complexity of dealing with the current driven base that the BJT requires. Otherwise, both devices offer exceptional performance at high temperature.

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25

Oo, Myo Min, N. K. A. Md Rashid, J. Abdul Karim, M. R. Mohamed Zin, and N. F. Hasbullah. "Neutron Radiation Effect On 2N2222 And NTE 123 NPN Silicon Bipolar Junction Transistors." IOP Conference Series: Materials Science and Engineering 53 (December 20, 2013): 012013. http://dx.doi.org/10.1088/1757-899x/53/1/012013.

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26

Hasegawa, Hideki, Hajime Fujikura, and Hiroshi Okada. "Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires." MRS Bulletin 24, no. 8 (August 1999): 25–30. http://dx.doi.org/10.1557/s0883769400052866.

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A scaling-down of feature sizes into the nanometer range is a common trend in silicon and compound semiconductor advanced devices. That this trend will continue is clearly evidenced by the fact that the “roadmap” for the Si ultralarge-scale-integration circuit (USLI) industry targets production-level realization of a 70-nm minimum feature size for the year 2010. GaAs- and InP-based heterostructure devices such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have made remarkable progress by miniaturization, realizing ultrahigh speeds approaching the THz range with ultralow power consumption. Due to progress in nanofabrication technology, feature sizes of scaled-down transistors are rapidly approaching the Fermi wavelength of electrons in semiconductors, even at the production level. This fact may raise some concerns about the operation of present-day devices based on semiclassical principles.However, the progress of nanofabrication technology has opened up the exciting possibility of constructing novel quantum devices, based directly on quantum mechanics, by utilizing artificial structures such as quantum wells, wires, and dots. In these structures, new physical effects appear, such as the formation of new quantum states in single and coupled quantum structures, artificial miniband formation in superlattices, tunneling and resonant tunneling in single and multiple barriers, propagation of phase-coherent guided electron waves in quantum wires, conductance oscillations in small tunnel junctions due to single-electron tunneling, and so on. We expect that these effects will offer rich functionality in next-generation semiconductor quantum ULSIs based on artificial quantum structures, with feature sizes in the range of one to a few tens of nanometers. Beyond this, molecular-level ULSIs using exotic materials and various chemical and electrochemical processes other than the standard semiconductor ones may appear, butat present, they still seem to be too far in the future for realistic consideration for industrial applications.

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27

OO, Myo, Nahrul Rashid, Julia Karim, Zin Mohamed, Rosminazuin Rahim, Amelia Azman, and Nurul Hasbullah. "Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation." Nuclear Technology and Radiation Protection 29, no. 1 (2014): 46–52. http://dx.doi.org/10.2298/ntrp1401046o.

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Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This paper examines neutron radiation with pneumatic transfer system of TRIGA Mark-II reactor at the Malaysian Nuclear Agency. The effects of the gamma radiation from Co-60 on silicon NPN bipolar junction transistors is also be examined. Analyses on irradiated transistors were performed in terms of the electrical characteristics such as current gain, collector current and base current. Experimental results showed that the current gain on the devices degraded significantly after neutron and gamma radiations. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by the increasing recombination current in the base-emitter depletion region.

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28

Fardi, Hamid. "Modeling and Simulation of High Blocking Voltage in 4H Silicon Carbide Bipolar Junction Transistors." Physical Science International Journal 7, no. 3 (January 10, 2015): 127–36. http://dx.doi.org/10.9734/psij/2015/17567.

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29

Neugroschel, A., Chih-Tang Sah, M. S. Carroll, and K. G. Pfaff. "Base current relaxation transient in reverse emitter-base bias stressed silicon bipolar junction transistors." IEEE Transactions on Electron Devices 44, no. 5 (May 1997): 792–800. http://dx.doi.org/10.1109/16.568041.

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30

Jang, Sheng-Lyang, and Kuang-Lang Chern. "Breakdown characteristics of emitter-base and collector-base junctions of silicon bipolar junction transistors." Solid-State Electronics 35, no. 5 (May 1992): 615–22. http://dx.doi.org/10.1016/0038-1101(92)90026-9.

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31

Lindgren, Anders, and Martin Domeij. "1200 V 6 A High Temperature SiC BJTs." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000160–66. http://dx.doi.org/10.4071/hitec-alindgren-tp24.

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Silicon carbide (SiC) bipolar junction transistors (BJTs) are normally-off devices which can block high voltages at high temperature operation. The SiC BJTs can be switched very fast with low losses [2] compared to BJT's made in silicon (Si), and can be operated at temperatures up to and above 250 °C. Vertical 1200V 6A rated NPN SiC BJTs were fabricated and packaged in a high-temperature capable metal package of the type TO-258. The transistors were characterized both statically and in terms of switching. A SPICE model was developed for the transistors, including the parasitic capacitances of the internal pn-junctions, as well as temperature dependence of the current gain and the collector series resistance. Switching measurements were performed showing VCE voltage rise- and fall-times in the range of 20 ns. The switching behavior is in qualitative agreement with SPICE simulations.

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32

Kaplan, Steven L., and Aderinto Ogunniyi. "Reliability Testing of 4H-SiC Bipolar Junction Transistors in Continuous Switching Applications." Materials Science Forum 600-603 (September 2008): 1167–70. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1167.

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Continued improvement in silicon carbide (SiC) material processing has allowed development of efficient high temperature devices which are uniquely suited to power electronics circuit designs. The 4H-SiC structure has several intrinsic characteristics that facilitate optimal speed and power handling during high temperature device operation. These characteristics include wide bandgap (3.2 eV), high dielectric breakdown (3.5 MV/cm), and high thermal conductivity (4.9 W/cm-K)[1,2]. By combining these properties, SiC bipolar junction transistors (BJTs) can achieve fast, low impedance switching at high voltages (1.2 kV). New generation devices are being developed with increased current handling capability, as well as improved forward voltage characteristics. The device considered here, along with its on-state DC characteristic, is shown in figure 1. The BJTs are approximately 5mm by 5mm, and are nominally rated for a maximum Ice of 50A. Measurements on the Tektronix 371B curve-tracer indicate current gains over 60 at 25 oC and roughly 40 at 150 oC. These results were obtained at collector currents up to 20A. The base current for BJTs is typically 300 to 800 mA, depending on device temperature and the maximum device current required. In order to meet current handling requirements of up to 80A, as required for power conversion in modern military systems such as the hybrid-electric vehicle (HEV), it is necessary to configure these devices in parallel with minimal external cooling. The resulting switching circuits must therefore be validated for operation at high temperatures (package temperatures of 90 oC, and junction temperatures to 150 oC). Validation includes characterization of the devices in clamped inductive circuits with devices configured both alone and in parallel over time. Figure 4 shows measurement waveforms obtained during continuous clamped inductive switching. The primary focus of this work is to establish the overall performance and reliability of these newer generation SiC BJTs in power conversion circuits. Failure analysis and critical performance issues, such as current sharing, energy loss, and total reverse recovery charge are addressed. The initial results of the experiments indicate that these SiC switches have the potential to perform reliably in high temperature power conversion.

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33

Liu, Chaoming, Xingji Li, Jianqun Yang, and Erming Rui. "Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ions." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 735 (January 2014): 198–201. http://dx.doi.org/10.1016/j.nima.2013.09.048.

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34

McLaughlin, K. L., M. A. Taylor, and G. Sweeney. "Effect of surface treatment on dopant diffusion in polycrystalline silicon capped shallow junction bipolar transistors." Applied Physics Letters 47, no. 9 (November 1985): 992–94. http://dx.doi.org/10.1063/1.95954.

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35

Asllani, Besar, Pascal Bevilacqua, Hervé Morel, Dominique Planson, Luong Viet Phung, Beverley Choucoutou, Thomas Lagier, and Michel Mermet-Guyennet. "Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons." Materials Science Forum 1004 (July 2020): 923–32. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.923.

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This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a βMax of 69. Double pulse tests reveal state of the art switching with very sharp dV/dt and di/dt. Turn-on is operated at less than 100 ns for an EON lower than 4mJ, whereas the turn-off takes longer times due to tail current resulting in EOFF of 17.2 mJ and 50 mJ for the single BJT and Darlington respectively when operated at high current density. Excellent parallelisation have been achieved.

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36

Lindgren, Anders, Martin Domeij, and Tomas Hjort. "1200V 20A SiC BJTs operating at 250°C." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000091–97. http://dx.doi.org/10.4071/hiten-paper1-alindgren.

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Silicon carbide (SiC) bipolar junction transistors (BJTs) are normally-off devices which can block high voltages at high temperature operation. The SiC BJTs can be switched very fast with low losses [2] compared to BJT's made in silicon (Si), and can be operated at temperatures up to and above 250 °C. Vertical 1200V 20A rated high temperature capable NPN SiC BJTs were fabricated and packaged in a high-temperature capable metal package of the type TO-258. The transistors were characterized both statically and in terms of switching. A SPICE model was developed for the transistors, including the parasitic capacitances of the internal pn-junctions, as well as temperature dependence of the current gain and the collector series resistance. Switching measurements were performed showing VCE voltage rise- and fall-times in the range of 20–30 ns. The switching behavior is in qualitative agreement with SPICE simulations.

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37

Liu, Chaoming, Xingji Li, Jianqun Yang, and Joachim Bollmann. "Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20MeV Br ions." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 735 (January 2014): 462–65. http://dx.doi.org/10.1016/j.nima.2013.10.017.

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Pogany, D., A. Chantre, J. A. Chroboczek, and G. Ghibaudo. "Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation." Applied Physics Letters 68, no. 4 (January 22, 1996): 541–43. http://dx.doi.org/10.1063/1.116393.

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Liu, Chaoming, Xingji Li, Jianqun Yang, Guoliang Ma, and Liyi Xiao. "Bias dependence of synergistic radiation effects induced by electrons and protons on silicon bipolar junction transistors." Radiation Physics and Chemistry 111 (June 2015): 36–39. http://dx.doi.org/10.1016/j.radphyschem.2015.02.002.

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Liu, Chaoming, Xiaodong Zhang, Jianqun Yang, Xingji Li, and Guoliang Ma. "Radiation damage and defects in NPN bipolar junction transistors irradiated by silicon ions with various energies." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 409 (October 2017): 246–50. http://dx.doi.org/10.1016/j.nimb.2017.05.044.

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Chen, Si, Chao Luo, Yujing Zhang, Jun Xu, Qitao Hu, Zhen Zhang, and Guoping Guo. "Current Gain Enhancement for Silicon-on-Insulator Lateral Bipolar Junction Transistors Operating at Liquid-Helium Temperature." IEEE Electron Device Letters 41, no. 6 (June 2020): 800–803. http://dx.doi.org/10.1109/led.2020.2985674.

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Rugen, Sarah, Siddarth Sundaresan, Ranbir Singh, and Nando Kaminski. "Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions." Materials Science Forum 1004 (July 2020): 464–71. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.464.

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Bipolar silicon carbide devices are attractive for high power applications offering high voltage devices with low on-state voltages due to plasma flooding. Unfortunately, these devices suffer from bipolar degradation, which causes a significant degradation of the on-state voltage. To explore the generation of stacking faults, which cause the degradation, the impact of the current density and temperature on bipolar degradation is investigated in this work. The analysis is done by stressing the base-collector diode of 1.2 kV bipolar junction transistors (BJTs) as well as the BJTs in common-emitter mode operation with different current densities at different temperatures.

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Suvanam, Sethu Saveda, David M. Martin, Carl Mikael Zetterling, and Anders Hallén. "Tailoring the Interface between Dielectric and 4H-SiC by Ion Implantation." Materials Science Forum 821-823 (June 2015): 488–91. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.488.

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In this paper effects of carbon (C), silicon (Si) and nitrogen (N) implantation on the interface properties of 4H-SiC/SiO2and the implications for 4H-SiC bipolar junction transistors (BJT) passivation are discussed. 4H-SiC epi-layer have been implanted with12C,14N and28Si ion at three different doses with energies of 3, 3.5 and 6 keV, respectively, resulting in a projected range of 8 nm for the three ions. Then metal oxide semiconductor (MOS) structures with SiO2as dielectric have been fabricated. Capacitance voltage measurements show an increase in the negative fixed charges for all the implanted samples as a function of implantation induced damage. Similarly, in the case of C and Si, the surface roughness increases as a function of dose and the mass of the ions. No reduction of Dits due to the implantations is seen for any of the ions. Furthermore, TCAD device simulations of npn bipolar junction transistors (BJT), using the interface and fixed charges extracted from CV measurements, show a way to further optimize current gain and breakdown properties for the BJT.

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Bielejec, E., G. Vizkelethy, R. M. Fleming, W. R. Wampler, S. M. Myers, and D. B. King. "Comparison Between Experimental and Simulation Results for Ion Beam and Neutron Irradiations in Silicon Bipolar Junction Transistors." IEEE Transactions on Nuclear Science 55, no. 6 (December 2008): 3055–59. http://dx.doi.org/10.1109/tns.2008.2007561.

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Jang, S. L., S. S. Liu, and C. J. Tsai. "Dynamic high-current stressing damage and post-stress relaxation in p-n-p silicon bipolar junction transistors." Solid-State Electronics 38, no. 7 (July 1995): 1387–93. http://dx.doi.org/10.1016/0038-1101(94)00246-c.

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Kazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (March 28, 2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

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Waskiewicz, Ryan J., Brian R. Manning, Duane J. McCrory, and Patrick M. Lenahan. "A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance." Materials Science Forum 1004 (July 2020): 306–13. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.306.

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We show that electrically detected electron nuclear double resonance (EDENDOR) can be detected with relatively high signal-to-noise ratios in fully processed 4H-SiC bipolar junction transistors (BJTs). We observe EDENDOR of nitrogen interacting with recombination center defects in the depletion region of forward-biased emitter-base junctions of these devices at room temperature. Our results indicate that EDENDOR has great potential in the investigation of SiC-based devices specifically, as well as in the investigation of solid-state devices based upon other material systems.

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Casady, J. B., D. C. Sheridan, A. Ritenour, V. Bondarenko, and R. Kelley. "High Temperature Performance of Normally-off SiC JFET's Compared to Competing Approaches." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000152–59. http://dx.doi.org/10.4071/hitec-jcasady-tp23.

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Normally-off Silicon Carbide (SiC) power Junction Field Effect Transistors (JFETs) were compared with competing power transistor technology at temperatures from 25 °C to 150 °C as limited by the packaging. Switching energies were measured from 1200 V, 125 mΩ and 50 mΩ (room temperature) rated SiC power JFETs and compared with 900 V silicon (Si) super-junction Metal Oxide Semiconductors (MOSFETs) and 1200 V Si Insulated Gate Bipolar Transistors (IGBTs). For both comparisons, measured performance for the SiC power JFET was advantageous at all temperatures when switching at 50 kHz, including a total switching energy (ESW) of 97 μJ for the SiC JFET, compared with 158 μJ for the Si super-junction MOSFET, and 550 μJ for the Si IGBT at 25 °C. At 150°C, the ESW was 138 μJ for the SiC power JFET, 413 μJ for the Si super-junction MOSFET, and 1020 μJ for the Si IGBT. Increasing the die size of the 1200 V, normally-off SiC JFET by 2.25 resulted in an measured increase in switching energy of 2.7 and 2.37 at 25 °C and 150 °C, respectively, a quasi-linear relationship. Higher power preview products of the SiC normally-off JFET technology were also examined including a 1200 V, 25 mΩ (room-temperature rating) power JFET characterized up to 250 °C, and a module capable of 1200 V, 120 A DC performance at 25 °C.

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Dong, Kang Ning, Xi Jun Zhang, and Jie Yang. "Research on Sensitive Ports under the Action of Different ESD Initial Injected Voltage of Typical High-Frequency Low-Noise Silicon Bipolar Transistors." Applied Mechanics and Materials 513-517 (February 2014): 4563–66. http://dx.doi.org/10.4028/www.scientific.net/amm.513-517.4563.

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In order to find the influence of ESD initial injected voltage on sensitive port of some high-frequency low-noise silicon bipolar transistors, some electrostatic discharge (ESD) experiments were taken on 9014 and 2SA812, which are beneficial to study the relevant law of ESDS (ESD sensitivity). The results show that the reverse-biased collector-base junction of 9014 and 2SA812 satisfied the law of latent damage. Besides, the ESD initial injected voltage is inversely proportional to the number of ESD before the device out of work, and proportional to the failure voltage.

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Gnana Prakash, A. P., and N. Pushpa. "Application of Pelletron Accelerator to Study High Total Dose Radiation Effects on Semiconductor Devices." Solid State Phenomena 239 (August 2015): 37–71. http://dx.doi.org/10.4028/www.scientific.net/ssp.239.37.

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Silicon bipolar junction transistors (BJTs), Silicon-germanium heterojunction bipolar transistors (SiGe HBTs) and metal oxide semiconductor (MOS) devices are the key components of BiCMOS integrated circuits. The semiconductor devices need to withstand very high total doses (100’s of Mrad) for reliable operation of electronic circuits for 8-10 years of LHC operation. The study of radiation tolerance of semiconductor devices up to 100 Mrad of total dose takes longer time with conventional 60Co gamma, proton and electron irradiation facilities and the effects due to these radiations are well understood. Hence it is important to study the effects of heavy ion irradiation on various semiconductor devices. The irradiation time decreases with increasing linear energy transfer (LET) of incident radiation and LET increases with atomic number of the impinging ions. But it is essential to understand the mechanism of energy transfer by different heavy ions in semiconductor devices. Therefore, here we give an overview of different heavy ion interactions with Si BJTs, MOSFETs and SiGe HBTs by primarily focusing on the electrical characteristics of these devices before and after ion irradiation. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

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