Relevant bibliographies by topics / Boron atomic ions

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Boron atomic ions'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Boron atomic ions"

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Klose, J. Z., J. R. Fuhr, M. S. Price, and W. L. Wiese. "Atomic branching ratio data for boron-like ions." Journal of Quantitative Spectroscopy and Radiative Transfer 48, no. 1 (July 1992): 33–39. http://dx.doi.org/10.1016/0022-4073(92)90005-o.

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Ptak, A. J., K. S. Ziemer, M. R. Millecchia, C. D. Stinespring, and T. H. Myers. "Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 161–66. http://dx.doi.org/10.1557/s1092578300002398.

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The operating regimes of two rf-plasma sources, an Oxford CARS-25 and an EPI Unibulb, have been extensively characterized. By changing the exit aperture configuration and using an electrostatic deflector, the Oxford source could produce either primarily atomic nitrogen, atomic nitrogen mixed with low energy ions, or a large flux of higher energy ions (>65 eV) as the active species in a background of neutral molecular nitrogen. The EPI source produced a significant flux of metastable molecular nitrogen as the active species with a smaller atomic nitrogen component. Nitridation of sapphire using each source under the various operating conditions indicate that the reactivity was different for each type of active nitrogen. Boron contamination originating from the pyrolytic boron nitride plasma cell liner was observed.
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Xie, Kelvin Y., Qi An, Takanori Sato, Andrew J. Breen, Simon P. Ringer, William A. Goddard, Julie M. Cairney, and Kevin J. Hemker. "Breaking the icosahedra in boron carbide." Proceedings of the National Academy of Sciences 113, no. 43 (October 6, 2016): 12012–16. http://dx.doi.org/10.1073/pnas.1607980113.

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Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and characterization of individual ionization events gives unexpected evidence of the destruction of individual icosahedra. Statistical analyses of the ions created during the field evaporation process have been used to deduce relative atomic bond strengths and show that the icosahedra in boron carbide are not as stable as anticipated. Combined with quantum mechanics simulations, this result provides insight into the structural instability and amorphization of boron carbide. The temporal, spatial, and compositional information provided by atom probe tomography makes it a unique platform for elucidating the relative stability and interactions of primary building blocks in hierarchically crystalline materials.
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Peng, Jianfang, and Anil K. Pradhan. "Diagnostics of EUV Spectral Emission from Boron-like Ions." International Astronomical Union Colloquium 152 (1996): 589–93. http://dx.doi.org/10.1017/s0252921100036587.

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Recent developments of EUV diagnostics from transitions in Boron-like ions, C II, N III, O IV, Ne VI, Mg VIII, Al IX, Si X, and S XII, are discussed based on new atomic data (Zhang, Graziani & Pradhan (1994)) and systematic theoretical calculations of line intensity ratios (Peng & Pradhan 1995). The available EUV and UV lines which are good temperature and density diagnostics are summarized. Possible applications of these lines to the investigation of the physical conditions in astrophysical objects are proposed.
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Ma, Quan Bao, Augustinas Galeckas, Alexander Azarov, Annett Thøgersen, Patricia Almeida Carvalho, Daniel N. Wright, Spyros Diplas, et al. "Boron-Implanted 3C-SiC for Intermediate Band Solar Cells." Materials Science Forum 858 (May 2016): 291–94. http://dx.doi.org/10.4028/www.scientific.net/msf.858.291.

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Sublimation-grown 3C-SiC crystals were implanted with 2 atomic percent of boron ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 8.5×1016 atoms/cm2. The samples were then annealed at 1400, 1500 and 1600 °C for 1h at each temperature. The buried boron box-like concentration profile can reach ~2×1021 cm-3 in the plateau region. The optical activity of the incorporated boron atoms was deduced from the evolution in absorption and emission spectra, indicating possible pathway for achieving an intermediate band behavior in boron doped 3C-SiC at sufficiently high dopant concentrations.
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Dorokhov, A. E., A. P. Martynenko, F. A. Martynenko, and O. S. Sukhorukova. "Hyperfine splitting of P-states in light muonic ions." EPJ Web of Conferences 222 (2019): 03008. http://dx.doi.org/10.1051/epjconf/201922203008.

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We calculate hyperfine structure intervals for P–states in muonic ions of lithium, beryllium and boron. To construct the particle interaction operator in momentum space we use the tensor method ofprojection operators on states with definite quantum numbers of total atomic momentum F and total muonmomentum j. We take into account vacuum polarization, relativistic, quadruple and structure corrections of orders α4, α5 and α6. The obtained numerical values of hyperfine splittings can be used for a comparison with future experimental data.
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Dorokhov, A. E., R. N. Faustov, A. P. Martynenko, and F. A. Martynenko. "Precision physics of muonic ions of lithium, beryllium and boron." International Journal of Modern Physics A 36, no. 04 (February 10, 2021): 2150022. http://dx.doi.org/10.1142/s0217751x21500226.

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The problem of determining the main parameters of light nuclei from precision atomic spectroscopy is considered. Within the framework of the quasipotential method in quantum electrodynamics, the energy interval [Formula: see text] in muonic ions of lithium, beryllium and boron is calculated. Corrections of orders [Formula: see text], which are determined by relativistic effects, effects of vacuum polarization, nuclear structure and recoil, as well as combined corrections, including the above, are taken into account. Nuclear structure effects are expressed in terms of the nuclear charge radius in the case of one-photon interaction and the electromagnetic form factors of nuclei in the case of two-photon interaction. The obtained numerical values for the [Formula: see text] interval can be used for comparison with future experimental data and for a more accurate determination of the nucleus charge radii.
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Machaka, Ronald, Bonex W. Mwakikunga, Elayaperumal Manikandan, Trevor E. Derry, Iakovos Sigalas, and Mathias Herrmann. "Mechanical and Structural Properties of Fluorine-Ion-Implanted Boron Suboxide." Advances in Materials Science and Engineering 2012 (2012): 1–11. http://dx.doi.org/10.1155/2012/792973.

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Results on a systematic study on the effects of ion implantation on the near-surface mechanical and structural properties of boron suboxide (B6O) prepared by uniaxial hot pressing are reviewed. 150 keV fluorine ions at fluences of up to5.0×1016 ions/cm2were implanted into the ultrahard ceramic material at room temperature and characterized using Raman spectroscopy, atomic force microscopy, and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Evidence of ion-beam-assisted nucleation of novel clusteredBxOyFzparticles by ion implantation is revealed. In addition, obtained results also reveal that fluorine implantation into the B6O specimen leads to an overall degradation of near-surface mechanical properties with increasing fluorine fluence. Implications of these observations in the creation of amorphous near-surface layers by high-dose ion implantation are discussed in this paper.
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Boroznin, Sergey, Irina Zaporotskova, Natalya Boroznina, Pavel Zaporotskov, Tatyana Kislova, Vladimir Akatiev, and Vladimir Yarmak. "Vacancy Transport Properties in Boron-Carbon BC3 Nanotubes." NBI Technologies, no. 4 (February 2019): 38–44. http://dx.doi.org/10.15688/nbit.jvolsu.2018.4.7.

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The paper presents results of theoretical research into vacancy formation in B type of boron-carbon nanotubes ВСn, where n = 3. The research was performed using the MNDO method within the framework of an ionic-embedded covalent-cyclic cluster model, molecular cluster model and DFT method. We found that when a V-defect (vacancy) is introduced in a boron-carbon nanotube, the band gap of the defective tubules increases. It means that physical properties of materials can be purposefully changed by introducing defects. Vacancy migration along the atomic bonds in the tubule was simulated and vacancy transport properties were studied. It was found that the defect migration along different bonds actually represents the process of carbon or boron ions hopping between their stable states on the nanotube surface. The calculated activation energy values revealed dependence of ionic conductivity in boron-carbon tubules on temperature.
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Brandau, C., F. Melchert, S. Krudener, S. Meuser, A. Pfeiffer, K. V. Diemar, T. Bartsch, et al. "Quasi-resonant charge exchange between carbon and boron ions." Journal of Physics B: Atomic, Molecular and Optical Physics 28, no. 18 (September 28, 1995): L579—L584. http://dx.doi.org/10.1088/0953-4075/28/18/002.

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Dissertations / Theses on the topic "Boron atomic ions"

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Pastol, Yvon. "Etude de la cristallisation en phase solide de couches minces de silicium implantees." Paris 7, 1987. http://www.theses.fr/1987PA077142.

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Etude des effets de dopage par implantation de bore et de phosphore. Etude du role des defauts d'irradiation dans des couches implantees au silicium. Les couches implantees et non implantees sont cristallisees en phase solide par recuit thermique a basse temperature. Etude de la taille des grains, de la texture, de la morphologie de surface et de la conductivite electriques des couches en fonction de la concentration d'ions implantes
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Correge, G. "Calculation of fine and hyperfine transitions in atoms and ions." Thesis, Queen's University Belfast, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.394582.

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Hanssen, Jocelyn. "Théorie d'échange de charge aux basses et hautes énergies." Bordeaux 1, 1986. http://www.theses.fr/1986BOR10581.

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I) etude de l'echange de charge aux basses energies en utilisant la methode moleculaire et en introduisant un facteur de translation pour s'affranchir de l'effet de l'origine des coordonnees dans le calcul des sections efficaces totales. Ii) introduction d'operateurs d'alignement et d'orientation pour etudier l'influence de la polarisation dans une collision d'ion alcalin sur un alcalin excite par pompage optique. Iii) etude de l'approximation de born au 1er ordre par la theorie des perturbations avec des conditions asymptotiques correctes pour l'echange de charge aux hautes energies
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Hervieux, Paul-Antoine. "Etude théorique et expérimentale de l'excitation des ions multichargés par impact électronique." Grenoble 1, 1992. http://www.theses.fr/1992GRE10183.

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Pour la premiere fois, la section efficace differentielle d'excitation d'un ion multicharge par impact d'electrons a ete mesuree. Dans une experience en faisceaux croises, la transition resonnante 3s-3p de l'ion sodiumoide ar#7#+ a ete etudiee pour une energie electronique incidente de 100 ev. En accord avec cette experience, nous avons calcule les sections efficaces differentielles et totales dans une approximation de born generalisee. Les sections efficaces experimentales sont en bon accord avec ces estimations theoriques. Nous avons montre que l'approximation de coulomb-born qui consiste a prendre les fonctions d'onde de coulomb pour fonctions d'onde du continuum, est justifiee meme pour les grands angles. Une approximation semi-classique a aussi ete developpee. Dans ce modele, le projectile se deplace sur une trajectoire coulombienne classique et l'excitation est traitee par la theorie des perturbations du premier ordre dependantes du temps. Cette approche est similaire a la theorie semi-classique de l'excitation coulombienne des noyaux. Deux resultats nouveaux se degagent de cette etude: a l'inverse de l'excitation des atomes qui est fortement piquee aux angles avant, la section efficace differentielle quantique et semi-classique est pratiquement nulle a zero degre, puis augmente jusqu'a un maximum. On peut estimer la position de ce maximum en egalant le temps de collision sur une trajectoire coulombienne et le temps caracteristique de la transition. Les sections efficaces totales semi-classiques sont pratiquement egales a celles obtenues dans l'approximation de coulomb-born. Ce resultat s'etend a d'autres multipoles et dans une large gamme d'energie, de transfert d'energie, et de charge ionique. Avec ce modele semi-classique, nous avons a notre disposition une methode simple pour obtenir, avec une bonne precision, les sections efficaces d'excitation d'ions multicharges
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Pan, Cheng-Ta. "Electron energy loss spectroscopy of graphene and boron nitride with impurities or defects in the transmission electron microscope." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/electron-energy-loss-spectroscopy-of-graphene-and-boron-nitride-with-impurities-or-defects-in-the-transmission-electron-microscope(c5e574fb-fca6-4ccb-9ebc-60a3ba5c345b).html.

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The two-dimensional material graphene possesses many impressive properties such asextraordinary carrier mobility, mechanical stiffness and optical transmittance. However,the properties of pristine graphene do not always complement the requirements of applications. Of particular interest, a band gap is needed for electronic logic devices. Recent research shows that using few-layer hexagonal boron nitride as a substrate for graphene-based electronic devices can open a band gap in graphene. Also, introducing impurities such as hydrogen atoms, transition metals or silicon atoms on or within graphene can control the electronic properties according to recent studies. Furthermore, ion irradiation is an alternative option to tailor the properties of graphene by introducing defects. In this thesis, pristine, impure or defective graphene and few-layer boron nitride were characterised by scanning transmission electron microscopy (STEM) and electron energy loss (EEL) spectroscopy. Through STEM and EEL spectroscopy, lattice structures and electronic properties of these two-dimensional materials could be investigated at the atomic scale. This thesis focuses on the frontier studies of theoretical and experimental EEL spectroscopy of graphene and few-layer boron nitride with impurities. In the EEL spectra of pristine graphene and boron nitride two prominent peaks were observed, which are attributed to the plasmon excitations of π- and π+σ-electrons. By introducing impurities such as hydrogen adatoms on graphene and substitutional oxygen and carbon atoms within single-layer boron nitride, our experimental and simulated EEL spectra show that their π-plasmon peaks are modified. The concentrations of these impurities were then evaluated via EEL spectra and atomic-resolution images. If other impurities, such as various transition metals and silicon atoms, are introduced on or within single-layer graphene, our simulated EEL spectra demonstrate that the geometry of these impurity clusters affects the π-plasmon peak in graphene and some impurities even enhance it. Finally, experiments on in-situ transmission electron microscopy and ex-situ STEM and Raman spectroscopy were conducted to investigate ion irradiated graphene. Many topological defects were, for the first time, observed in atomic-resolution STEM images of ion irradiated graphene. Simulated EEL spectra of defective graphene are also reported, which suggests that corrugations and dangling bonds in defects can modify out-of-plane EEL spectra and introduce intraband transitions, respectively.
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Vetter, Ulrich. "Lanthanide Doped Wide Band Gap Semiconductors: Intra-4f Luminescence and Lattice Location Studies." Doctoral thesis, 2003. http://hdl.handle.net/11858/00-1735-0000-0006-B555-B.

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Book chapters on the topic "Boron atomic ions"

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Hirota, E., K. Kuchitsu, T. Steimle, J. Vogt, and N. Vogt. "25 BH2+ Boron (1+)ion – dihydrogen (1/1)." In Molecules Containing No Carbon Atoms and Molecules Containing One or Two Carbon Atoms, 55. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-540-70614-4_26.

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Schweitzer, George K., and Lester L. Pesterfield. "The Boron Group." In The Aqueous Chemistry of the Elements. Oxford University Press, 2010. http://dx.doi.org/10.1093/oso/9780195393354.003.0009.

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The elements which constitute the Boron Group of the Periodic Table are boron B, aluminum Al, gallium Ga, indium In, and thallium Tl. All five of the elements have atoms characterized by an outer electron structure of ns2np1 with n representing the principal quantum number. There are marked similarities in the elements, except for B whose small size and high charge density make it a non-metal. B evidences an oxidation state of III but shows no aqueous cation chemistry. The other elements all show cation chemistries involving an oxidation state of III, but the I oxidation state becomes progressively more stable until at Tl it is the predominant state. All ions in the group are colorless. Ionic sizes in pm are B+3(27), Al+3(53), Ga+3(62), In+3(80), Tl+3(89), and Tl+(150), with the B+3 value being hypothetical since B bonds only covalently. In line with the increasing sizes, the basicity of the oxides and hydroxides increases: H3BO3 or B(OH)3 is weakly acidic, M(OH)3 for Al, Ga, and In are amphoteric, and Tl(OH)3 or Tl2O3 is basic. The E° values in volts for the M(III)/M couples are as follows: H3BO3/B (−0.89), Al+3/Al (−1.68), Ga+3/Ga (−0.55), and In+3/In (−0.35). The E° value for the Tl+/Tl couple is −0.33 v. a. E–pH diagram. The E–pH diagram for 10−1.0 M B is presented in Figure 7.1. In the figure legend are equations which describe the lines which separate species. Considerably above the H3BO3/B line, the HOH≡H+/H2 line appears, which indicates that elemental B is thermodynamically unstable in HOH, but in practice B has a strong tendency to be non-reactive, vigorous treatment usually being required to oxidize it.
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Wendler, E., B. Weber, W. Wesch, U. Zammit, and M. Marinelli. "LATTICE POSITION OF DISPLACED ATOMS IN BORON IMPLANTED SILICON." In Ion Beam Modification of Materials, 806–9. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50155-6.

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Merkt, FrÉdÉric. "Molecular-physics aspects of cold chemistry." In Current Trends in Atomic Physics, 82–141. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780198837190.003.0003.

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Molecular-physics aspects of cold chemistry are introduced with the example of few-electron molecules. After a brief overview of general aspects of molecular physics, the solution of the molecular Schrödinger equation is presented based on the Born-Oppenheimer approximation and the subsequent evaluation of adiabatic, nonadiabatic, relativistic and radiative (QED) corrections. Low-temperature chemical phenomena are introduced with the example of ion-molecule reactions, using the classical Langevin model for barrier-free exothermic reactions as reference. Then, methods to generate cold few-electron molecules by supersonic-beam-deceleration methods such as Stark, Zeeman, and Rydberg-Stark decelerations are presented. Two astrophysically important reactions, the reaction between H2 and H2+ forming H3+ and H, a very fast reaction following Langevin-capture going over to quantum-Langevin capture at low temperature, and the radiative association reaction H+ + H forming H2+, a very slow reaction in which quantum effects (shape resonances) become important at low temperatures, are used to illustrate the concepts introduced.
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Jensen, William B. "Richard Abegg and the Periodic Table." In Mendeleev to Oganesson. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780190668532.003.0016.

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The German chemist Richard Wilhelm Heinrich Abegg (Fig. 13.1), was born on 9 January 1869 in Danzig (now Gdansk, Poland) (1). He received his PhD in 1891 from the University of Berlin for work in the field of organic chemistry done under the direction of August Hofmann. He switched to the new and rising field of physical chemistry immediately upon graduation, doing postdoctoral work in the laboratories of Wilhelm Ostwald at Leipzig and Svante Arrhenius at Stockholm, as well as serving as personal assistant to Walther Nernst at Göttingen. In 1897 Abegg was appointed professor of chemistry at the University of Breslau (now Wroclaw, Poland). In 1909 he moved to the local Technischen Hochschule, where he remained until his untimely death on 3 April 1910 at age 41 in a ballooning accident near Koszalin in what is now modern-day Poland. As might be inferred from his association with Ostwald, Arrhenius, and Nernst, Abegg’s research interests quickly focused on the newly formulated theories of ionic dissociation and chemical equilibrium, where he is credited with contributing to an understanding of the theory of freezing point depression and with writing two popular introductory textbooks on the use of the ionic theory and equilibrium in reinterpreting various traditional areas of chemical synthesis and analysis (2, 3). With the discovery of the electron in 1897 Abegg soon became interested in its use to rationalize various electrochemical phenomena and in its possible implications for both the periodic table and chemical bonding. That year he published, in collaboration with Guido Bodländer, his theory of electroaffinity in which he postulated that electrochemical half-cell oxidation potentials could be used as a measure of an atom’s attraction for electrons and that this, in turn, could be qualitatively correlated with periodic trends (Fig. 13.2) in such properties as molecular polarity, solubility, and the tendency to form complex ions (4, 5).
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Conference papers on the topic "Boron atomic ions"

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Rahim, Magda A., Beverly Karplus Hartline, Renee K. Horton, and Catherine M. Kaicher. "Energy Levels of Core-Excited States and Atomic Oscillator Strengths for Boron and Boron-like Ions (abstract)." In WOMEN IN PHYSICS: Third IUPAP International Conference on Women in Physics. AIP, 2009. http://dx.doi.org/10.1063/1.3137868.

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Kumada, Hiroaki, Takemi Nakamura, Akira Matsumura, and Koji Ono. "Development of a New Monte-Carlo Treatment Planning System for Boron Neutron Capture Therapy." In 17th International Conference on Nuclear Engineering. ASMEDC, 2009. http://dx.doi.org/10.1115/icone17-75407.

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To improve treatment planning in boron neutron capture therapy (BNCT), a new Monte-Carlo radiotherapy planning system is under development at Japan Atomic Energy Agency (JAEA). This system (developing code: JCDS-FX) builds on fundamental technologies of JCDS (JAEA Computation Dosimetry System) which has been applied to actual BNCT trials at Japan Research Reactor No.4 (JRR-4). Basic technologies of JCDS have been taken over to JCDS-FX, and some new functions have been built into the system. One of features of the JCDS-FX is that PHITS as a multi-purpose particle Monte-Carlo transport code has been applied to particle transport calculation. Application of PHITS enables to evaluate doses for neutrons and photons as well as protons and heavy ions. Therefore, the JCDS-FX with PHITS can perform treatment planning for not only BNCT but also particle radiotherapy. To verify calculation accuracy of the JCDS-FX with PHITS, dose evaluations for neutron irradiation of a cylindrical water phantom and for an actual clinical trial conducted at JRR-4 were performed. The verification results indicated that JCDS-FX is applicable to BNCT treatment planning in practical use. Further verifications of the system are being performed to achieve practical application of the system in the future. And in addition to the BNCT, investigations for application of the system to any other particle radiotherapy like proton therapy are carried forward.
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Harris, Mark A., L. Rubin, D. Tieger, V. Venezia, T. J. Hsieh, J. Miranda, and D. Jacobson. "Dose Retention Effects in Atomic Boron and ClusterBoron™ (B18H22) Implant Processes." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401483.

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Yokota, Katsuhiro, Shuusaku Nakase, and Fumiyoshi Miyashita. "Effects of Hydrogen Atoms on Redistribution of Implanted Boron Atoms in Silicon during Annealing." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401468.

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Sameshima, Toshiyuki, Takuma Uehara, Takashi Sugawara, Masahiko Hasumi, Tomokazu Nagao, Keisuke Yasuta, Yutaka Inouchi, and Junichi Tatemichi. "Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300°C." In 2018 22nd International Conference on Ion Implantation Technology (IIT). IEEE, 2018. http://dx.doi.org/10.1109/iit.2018.8807972.

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Lawrence, D. F., R. M. Ulfig, D. J. Larson, D. P. Olson, D. A. Reinhard, I. Y. Martin, S. Strennen, and P. H. Clifton. "Routine Device-Level Atom Probe Analysis." In ISTFA 2014. ASM International, 2014. http://dx.doi.org/10.31399/asm.cp.istfa2014p0019.

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Abstract Continuing advances in Atom Probe Tomography and Focused Ion Beam Scanning Electron Microscope technologies along with the development of new specimen preparation approaches have resulted in reliable methods for acquiring 3D subnanometer compositional data from device structures. The routine procedure is demonstrated here by the analysis of the silicon-germanium source-drain region of a field effect transistor from a de-packaged off-the-shelf 28 nm design rule graphics chip. The center of the silicon-germanium sourcedrain region was found to have approximately 180 ppm of boron and the silicide contact was found to contain both titanium and platinum.
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Nagao, T., T. Uehara, K. Yasuta, Y. Inouchi, J. Tatemichi, M. Hasumi, and T. Sameshima. "Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300°C." In 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2018. http://dx.doi.org/10.23919/am-fpd.2018.8437361.

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Basu, S., B. J. Lee, and Z. M. Zhang. "Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-41266.

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This paper describes an experimental investigation on the infrared radiative properties of heavily-doped silicon (Si) at room temperature. Lightly-doped Si wafers were ion implanted with boron and phosphorus atoms to doping concentrations of 1×1020 and 1×1021 cm−3. Rapid thermal annealing was performed to activate the implanted dopants. A Fourier-transform infrared spectrometer was employed to measure the normal transmittance as well as reflectance of the samples in the spectral region from 2 to 20 μm. Accurate carrier mobility and ionization models were identified after carefully reviewing the available literature, and then incorporated into Drude model to predict the dielectric function of doped Si. The radiative properties of doped Si samples were calculated by treating the doped region as multilayer thin films of different doping concentrations on a thick Si substrate. The measured spectral transmittance and reflectance agree well with the model predictions. The results obtained from this study will facilitate the future applications of heavily-doped Si in semiconductor as well as MEMS devices.
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Jecko, Thierry, Markus Klein, and Xue Ping Wang. "Existence and Born-Oppenheimer Asymptotics of the Total Scattering Cross-Section in Ion-Atom Collisions." In Proceedings of the Bologna APTEX International Conference. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812794598_0012.

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Reports on the topic "Boron atomic ions"

1

Kimura, M. Removal of nonorthogonality in the Born theory used for study of electron capture in high energy ion-atom collisions. Office of Scientific and Technical Information (OSTI), January 1989. http://dx.doi.org/10.2172/6207841.

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