Relevant bibliographies by topics / Boron emitter

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Boron emitter'

Author: Grafiati
Published: 4 June 2021
Last updated: 12 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Boron emitter.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Boron emitter"

1

Boo, Hyunpil, Jong-Han Lee, Min Gu Kang, et al. "Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/921908.

Full text
Abstract:
P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘Cfor 30∼90 min for activation. Boron emitters were activated at1000∘Cor higher, while phosphorus emitters were activated at950∘C. QSSPC measurements show that the impliedVocof boron emitters increases about 15 mV and theJ01decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the impliedVocdecreases from 622 mV to 560 mV and theJ01increases with deep junction a
APA, Harvard, Vancouver, ISO, and other styles
2

Proscia, Nicholas V., Harishankar Jayakumar, Xiaochen Ge, et al. "Microcavity-coupled emitters in hexagonal boron nitride." Nanophotonics 9, no. 9 (2020): 2937–44. http://dx.doi.org/10.1515/nanoph-2020-0187.

Full text
Abstract:
AbstractIntegration of quantum emitters in photonic structures is an important step in the broader quest to generate and manipulate on-demand single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a tradeoff between the desired emitter properties and the photonic system practicality and performance. Here, we demonstrate “pick and place” integration of a Si3N4 microdisk optical resonator with a bright emitter host in the form of ∼20-nm-thick hexagonal boron nitride (hBN). The film folds a
APA, Harvard, Vancouver, ISO, and other styles
3

Bae, Joon Hyung, Phan Ngoc Minh, Takahito Ono, and Masayoshi Esashi. "Schottky emitter using boron-doped diamond." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, no. 3 (2004): 1349. http://dx.doi.org/10.1116/1.1736640.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Nursam, Natalita M., Yongling Ren, and Klaus J. Weber. "PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties." Advances in OptoElectronics 2010 (June 29, 2010): 1–8. http://dx.doi.org/10.1155/2010/487406.

Full text
Abstract:
The dependence of surface recombination of boron diffused and undiffused silicon surfaces passivated with a-Si:H on the net charge density is investigated in detail. The films are deposited by plasma-enhanced chemical vapour deposition using a 2.45 GHz microwave remote plasma system. The surface charge density on the samples is varied by depositing charge using a corona discharge chamber. Excess carrier lifetime, capacitance-voltage, and Kelvin probe measurements are combined to determine the surface recombination velocity and emitter saturation current density as a function of net charge dens
APA, Harvard, Vancouver, ISO, and other styles
5

Kim, Eun-Young, and Jeong Kim. "Effects of the Boron-Doped p+Emitter on the Efficiency of the n-Type Silicon Solar Cell." Advances in Materials Science and Engineering 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/974507.

Full text
Abstract:
The optimum structure of the p+emitter for the n-type silicon solar cell was determined with the simulation of the boron doping concentration. The boron concentration (NB) in the p+emitter was varied in the range of1×1017and2×1022 atoms/cm3while maintaining the base doping concentration at2×1016 atoms/cm3. With the increase of the boron concentration, the open circuit voltage (VOC) of the cell increased up to 0.525 V and then was nearly saturated atNB>5×1018 atoms/cm3. On the other hand, the short circuit current density (JSC) began to decrease atNB>1×1019 atoms/cm3due to the increase of
APA, Harvard, Vancouver, ISO, and other styles
6

Liang, Peng, Pei-De Han, Yu-Jie Fan, and Yu-Peng Xing. "Boron implanted emitter for n-type silicon solar cell." Chinese Physics B 24, no. 3 (2015): 038801. http://dx.doi.org/10.1088/1674-1056/24/3/038801.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Kang, W. P., A. Wisitsora-at, J. L. Davidson, and D. V. Kerns. "Ultralow-voltage boron-doped diamond field emitter vacuum diode." IEEE Electron Device Letters 19, no. 10 (1998): 379–81. http://dx.doi.org/10.1109/55.720192.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Stewart, James Callum, Ye Fan, John S. H. Danial, et al. "Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride." ACS Nano 15, no. 8 (2021): 13591–603. http://dx.doi.org/10.1021/acsnano.1c04467.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Deng, F., A. J. Francis, W. W. Weare, and F. N. Castellano. "Photochemical upconversion and triplet annihilation limit from a boron dipyrromethene emitter." Photochemical & Photobiological Sciences 14, no. 7 (2015): 1265–70. http://dx.doi.org/10.1039/c5pp00106d.

Full text
Abstract:
Non-coherent sensitized red-to-green upconversion has been achieved utilizing platinum(ii) tetraphenyltetrabenzoporphyrin (PtTPTBP) as the triplet sensitizer and a nearly quantitatively fluorescent boron dipyrromethene chromophore as the energy acceptor/annihilator in deoxygenated toluene.
APA, Harvard, Vancouver, ISO, and other styles
10

Schickedanz, Kai, Timo Trageser, Michael Bolte, Hans-Wolfram Lerner, and Matthias Wagner. "A boron-doped helicene as a highly soluble, benchtop-stable green emitter." Chemical Communications 51, no. 87 (2015): 15808–10. http://dx.doi.org/10.1039/c5cc07208e.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "Boron emitter"

1

Benick, Jan [Verfasser]. "High-Efficiency n-Type Solar Cells with a Front Side Boron Emitter / Jan Benick." München : Verlag Dr. Hut, 2011. http://d-nb.info/1013526287/34.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Maritan, Cheryl M. (Cheryl Maureen) Carleton University Dissertation Engineering Electrical. "LPCVD deposition of in-situ boron-doped polysilicon and its use in polysilicon emitter transistors." Ottawa, 1987.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Mojrová, Barbora. "Solární články z monokrystalického křemíku typu n s vysokou účinností." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-408053.

Full text
Abstract:
Tato dizertační práce je zaměřena vývoj a ověřování nových postupů přispívajících ke zvýšení účinnosti bifaciálních solárních článků založených na monokrystalickém křemíku n-typové vodivosti. Tato práce přináší nové poznatky o vylepšených výrobních procesech a postupech použitých během výroby článků v ISC Konstanz. V rámci práce byly vyrobeny solární články typu n-PERT (Passivated Emitter Rear Totally diffused) s vysokou účinností, a to pomocí standartních procesů a zařízení používaných běžně při průmyslové výrobě. Zapojení těchto průmyslových postupů a metod umožnilo ověřit možnosti výroby n-
APA, Harvard, Vancouver, ISO, and other styles
4

Frantík, Ondřej. "Vysokoteplotní procesy ve výrobě křemíkových fotovoltaických článků." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2014. http://www.nusl.cz/ntk/nusl-233622.

Full text
Abstract:
The thesis is focused on high temperature processes in crystalline solar cells production. Main topic is diffusion of traditional dopants phosphorus and boron. Diffusion processes for creating solar cells are different from classical diffusion in semiconductor industrial. It is reason why the thesis describes crated layers in detail. Knowledge of diffusion processes is used for creating bifacial solar cells and development of a new phosphorus emitter for conventional solar cells. Bifacial cells are a new type of cells. Developed new emitter increases efficiency and decreases cost of solar cell
APA, Harvard, Vancouver, ISO, and other styles
5

Lanterne, Adeline. "Étude, réalisation et caractérisation de dopages par implantation ionique pour une application aux cellules solaires en silicium." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY076/document.

Full text
Abstract:
Cette thèse a pour but d'étudier le dopage par implantation ionique pour la réalisation des différentes zones dopées des cellules solaires en silicium cristallin (émetteur, champ arrière...). L'avantage de l'implantation ionique, par rapport à la diffusion gazeuse, est de pouvoir contrôler le profil des dopants implantés ainsi que de simplifier les procédés de fabrication des cellules. Deux techniques d'implantation ionique ont été utilisées dans ces travaux, l'implantation classique par faisceau d'ions et l'implantation par immersion plasma. Des dopages au phosphore, au bore et à l'arsenic on
APA, Harvard, Vancouver, ISO, and other styles
6

Frey, Alexander [Verfasser]. "Industrial n-Type Silicon Solar Cells with Co-Diffused Boron Emitters / Alexander Frey." Konstanz : Bibliothek der Universität Konstanz, 2018. http://d-nb.info/1161342966/34.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Fernández, Robledo Susana [Verfasser], and Eicke [Akademischer Betreuer] Weber. "Laser-induced forward transfer based boron selective emitters for crystalline silicon solar cells." Freiburg : Universität, 2021. http://d-nb.info/122665715X/34.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Paviet-Salomon, Bertrand. "Procédés de dopage et de recuit laser pour la réalisation de cellules photovoltaïques au silicium cristallin." Phd thesis, Université de Strasbourg, 2012. http://tel.archives-ouvertes.fr/tel-00969033.

Full text
Abstract:
Cette thèse se propose d'étudier les procédés de dopage et de recuit laser comme outils permettant la réalisation de cellules photovoltaïques au silicium cristallin. Des émetteurs dopés ou recuits par laser sont tout d'abord réalisés à l'aide de trois lasers et de différentes sources dopantes. Les lasers utilisés sont un laser vert nanoseconde, un laser excimère et un laser ultraviolet à haute cadence. Comme sources dopantes nous avons utilisé le verre de phosphore, des couches de nitrures de silicium dopées au bore ou au phosphore, ou encore des implantations ioniques de bore ou de phosphore.
APA, Harvard, Vancouver, ISO, and other styles
9

Bourrellier, Romain. "Luminescence at Defects in h-BN : Excitons at Stacking Faults and Single Photon Emitters." Thesis, Paris 11, 2014. http://www.theses.fr/2014PA112285/document.

Full text
Abstract:
Dans les dernières années nombre de matériaux lamellaires à dimensions réduites ont démontré des propriétés optiques remarquables. Cependant, la plupart des études ont porté sur le système parfait et le rôle des défauts en tant que centres optiques actifs restent encore largement inexploré. Le nitrure de bore hexagonal (h-BN) est l'un des candidats les plus prometteurs pour les dispositifs émetteurs de lumière dans la région de l’UV lointain, présentant une forte émission excitonique à 5,8 eV. Cependant, émission n’apparaît uniquement que dans des monocristaux très purs qui peuvent difficileme
APA, Harvard, Vancouver, ISO, and other styles
10

Silva, Rodrigo Amaro e. "Empirical optimization and implementation of boron emitter on n-type silicon solar cells using BBR3 liquid source." Master's thesis, 2014. http://hdl.handle.net/10451/15931.

Full text
Abstract:
Tese de mestrado integrado em Engenharia da Energia e do Ambiente , apresentada à Universidade de Lisboa, através da Faculdade de Ciências, 2014<br>O presente trabalho aborda o estudo e optimização de um processo de difusão com fonte líquida de BBr3 para a formação de uma camada p+ em substrato de silício de tipo-n, sendo este passo uma das maiores limitações actuais para a implementação de células solares de alta eficiência de custo acessível baseadas neste material e com emissor de boro. Uma revisão do estado da arte e apresentada, com os seguintes tópicos: propriedades do silício de tipo-n
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Boron emitter"

1

Kiefer, Fabian, Robby Peibst, Tobias Ohrdes, Jan Krugener, H. Jorg Osten, and Rolf Brendel. "Emitter recombination current densities of boron emitters with silver/aluminum pastes." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925514.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Li, Xiaoqiang, Longzhong Tao, Zhengyue Xia, et al. "Boron diffused emitter etch back and passivation." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6317789.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

BAE, JOON HYUNG, PHAN NGOC MINH, TAKAHITO ONO, and MASAYOSHI ESASHI. "A SCHOTTKY EMITTER USING BORON-DOPED DIAMOND." In Proceedings of the Final Symposium of the Tohoku University 21st Century Center of Excellence Program. IMPERIAL COLLEGE PRESS, 2006. http://dx.doi.org/10.1142/9781860948800_0031.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Proscia, Nicholas V., Zav Shoton, Harishankar Jayakumar, et al. "Room-temperature quantum emitter arrays in hexagonal boron nitride." In Frontiers in Optics. OSA, 2017. http://dx.doi.org/10.1364/fio.2017.jw3a.122.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Dahlinger, M., S. J. Eisele, P. C. Lill, J. R. Kohler, and J. H. Werner. "Full area laser doped boron emitter silicon solar cells." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6317778.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Krugener, Jan, H. Jorg Osten, Fabian Kiefer, and Robby Peibst. "Comparison of Experimental Emitter Saturation Current Densities and Simulated Defect Densities of Boron-Implanted Emitters." In 2016 21st International Conference on Ion Implantation Technology (IIT). IEEE, 2016. http://dx.doi.org/10.1109/iit.2016.7882856.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Veschetti, Y., V. Sanzone, R. Cabal, and N. Bateman. "N-type boron emitter solar cells with implantation industrial process." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186156.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Singha, Bandana, and Chetan Singh Solanki. "Effect of low temperature oxidation (LTO) in reducing boron skin in boron spin on dopant diffused emitter." In INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015): Proceeding of International Conference on Condensed Matter and Applied Physics. Author(s), 2016. http://dx.doi.org/10.1063/1.4946725.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Proscia, Nicholas V., Zav Shoton, Harishankar Jayakumar, et al. "Formation of quantum emitter arrays in hexagonal Boron Nitride at room temperature." In CLEO: QELS_Fundamental Science. OSA, 2018. http://dx.doi.org/10.1364/cleo_qels.2018.ftu4h.1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Chen, Kexun, Ville Vahanissi, Zahra Jahanshah Rad, et al. "Black silicon boron emitter solar cells with EQE above 95% in UV." In 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC). IEEE, 2020. http://dx.doi.org/10.1109/pvsc45281.2020.9300686.

Full text
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography