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Relevant bibliographies by topics / Breakdown voltage

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Academic literature on the topic 'Breakdown voltage'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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Journal articles on the topic "Breakdown voltage"

1

Katim, Nurul, Mohd Ishak, Nur Mohamad Amin, Mardhiah Abdul Hamid, Khairol Amali Ahmad, and Norhafiz Azis. "Lightning Breakdown Voltage Evaluation of Palm Oil and Coconut Oil as Transformer Oil under Quasi-Uniform Field Conditions." Energies 11, no. 10 (October 9, 2018): 2676. http://dx.doi.org/10.3390/en11102676.

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This paper presents lightning (1.2/50 µs) breakdown voltages of palm oil (PO), coconut oil (CO) and mineral oil (MO) in a quasi-uniform sphere to sphere electric field at two gap distances. The type of PO used in this study is Refined Bleached Deodorized Palm Oil (RBDPO) Olein type. The effect of voltage polarities (positive and negative) and testing methods (rising voltage, up and down and multiple level) on the lightning breakdown performance were investigated. The results indicated that lightning breakdown voltages of CO and RBDPO are comparable to those of MO under various test conditions. The results indicated that there is no polarity effect for lightning impulse breakdown tests in a quasi-uniform field. The testing methods, including rising voltage method, up and down method and multiple level method have a notable influence on the breakdown voltages. The effect of the 50% breakdown voltage on rising voltage method, up and down method and multiple level method for RBDPO and CO is comparable to MO. The withstand voltage at 1% and 50% breakdown probabilities were obtained using the Normal distribution fitting on the cumulative probability plot of impulse shots. Based on a normal distribution fitting, withstand voltages 1% breakdown probability of POA were close to the MO. Finally, based on statistical studies and simulation using ANSYS software, the prediction formulas for breakdown voltage for larger gap distances for all samples were derived.

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Ghani, Sharin Ab, Mohd Shahril Ahmad Khiar, Imran Sutan Chairul, and Muhammad Imran Zamir. "Effect of repeated electrical breakdowns on mineral and natural ester insulating oils." Bulletin of Electrical Engineering and Informatics 10, no. 6 (December 1, 2021): 2989–96. http://dx.doi.org/10.11591/eei.v10i6.3258.

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Transformer insulating oils are exposed to repeated electrical discharge or breakdowns inside power transformers. Durability tests are conducted to analyze the ability of oil to resist decomposition due to such high electrical stresses. With the increasing demand for alternative insulating oils for oil-immersed transformers, it is worthy to compare the performance of different types of insulating oils (conventional mineral-based insulating oil and natural ester-based insulating oil) under repeated electrical breakdown. In this paper, the AC breakdown voltage of different mineral-based and natural ester-based insulating oils is reported. Durability tests were conducted based on the AC breakdown voltage behavior of insulating oils after 50 electrical breakdown shots. The AC breakdown voltage of each insulating oil sample was assessed according to the ASTM D1816 standard test method. Based on the results, it can be concluded that the dissimilarity in chemical composition of the insulating oils has a significant effect on the AC breakdown voltage behavior of these oils under repeated electrical breakdowns.

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Wang, Wei Qiang, and Yan Su. "Polarity Effect and Dielectric Breakdown of Composite Ferroelectric Films as the Dielectric for Electrowetting Systems." Solid State Phenomena 281 (August 2018): 598–603. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.598.

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In this paper, we study the electrical properties and breakdown phenomena of BaTiO3/Teflon composite ferroelectric thin film in electrowetting systems. The experimental results showed that the electrowetting effect and the breakdown voltage depend on DC voltage polarity, and this polarity dependence is closely related to the thickness of the ferroelectric film. Under AC voltages, the breakdown voltage increased directly with voltage frequency. These results are useful for designing reliable EWOD devices with low operation voltages and high robustness.

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Vazhov V. F., Petrenko E. V., and Yudin A. S. "Electric strength of dielectrics under influence of bipolar voltage pulses of submicrosecond duration." Technical Physics 92, no. 4 (2022): 537. http://dx.doi.org/10.21883/tp.2022.04.53613.304-21.

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The development of electric pulse technologies for the destruction of solids states (rocks) --- drilling, cutting and crushing requires reduction of high pulse voltages. In this work, for the first time, studies are proposed and carried out to determine the breakdown voltages of various dielectric media (air, water, rocks) while simultaneously supplying two pulses to the electrode system by two high voltage generators of different polarity --- positive and negative, which halves the operating impulse voltage each generator. In addition, experiments have shown that for all media there is a decrease in breakdown voltage in comparison with a monopolar voltage pulse, which reaches 28% --- for the breakdown of sandstone, 23% --- granite, 24% --- water, 25% --- air. A physical explanation of the discovered effect is given. Keywords: monopolar and bipolar pulse voltage, breakdown voltage, discharge channel.

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Shiomi, Hiromu, Takashi Tsuji, Naoyuki Ohse, Yasuhiko Onishi, and Kenji Fukuda. "Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation–Epitaxial MOSFETs with Low On-Resistance and Robustness." Materials Science Forum 858 (May 2016): 966–69. http://dx.doi.org/10.4028/www.scientific.net/msf.858.966.

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Impact ionization coefficients are important material properties that determine the breakdown voltage and safe operating area of power devices. This paper presents an anisotropy breakdown model with modified parameters that reproduces well experimental results for both peak breakdown voltages and sharp drops in breakdown voltage at high junction–termination–extension (JTE) acceptor concentrations. Using a newly developed simulation model, we optimized the edge termination and current-spreading layers (CSLs) and obtained a low specific on-resistance (RONA) of 11.6 mΩcm2 for a breakdown voltage (BVDSS) of approximately 4 kV and a high-avalanche-withstanding energy robustness of 4.6 Jcm-2.

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Settaouti, Abderrahmane. "Impulse Breakdown Characteristics of Main Gap in the Presence of a Local Discharge." Journal of Applied Science & Process Engineering 6, no. 2 (October 1, 2019): 413–23. http://dx.doi.org/10.33736/jaspe.983.2019.

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The characteristics of impulse breakdown voltages and the influence of the position of third electrode in air gap are investigated experimentally to study the parameters influencing the breakdown voltage in the presence of metallic objects around the high voltage power apparatus with air insulation. Experimental results show that the factors affecting the breakdown voltage are the shape and the size of the grounded electrode, the third metallic electrode location and the gap length. A comparison between negative and positive polarities of the applied voltages indicates an important influence of the polarity in the dielectric breakdown mechanism. The possible mechanism by which the local electric discharge initiates the main dielectric breakdown seems to be the high electric field around the local discharge channel and the streamers protruding from its surface.

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Rong, Hua, Yogesh K. Sharma, Fan Li, Mike R. Jennings, and Phil A. Mawby. "4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis." Materials Science Forum 778-780 (February 2014): 824–27. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.824.

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This paper presents and compares different avalanche breakdown voltage estimation methods in 4H-SiC (silicon carbide) using finite element simulation results on Schottky diode. 4H-SiC avalanche breakdown voltage and depletion width estimated with Baligas equations have shown to be higher than other estimation techniques and simulation results, especially for voltages higher than 5kV. This paper discusses the impact of choosing different junction termination extension (JTE) structures on two-dimensional junction curvature effects and electric field crowding for Schottky diodes Space-Modulated JTE (SMJTE) structure with optimum JTE dose and dimension could achieve up to 90% of the parallel plane breakdown voltage. For ultra high voltage devices (>15 kV) the SMJTE has significant improvement in terms of breakdown voltage. It also has a wider optimum JTE dose window. For 1 kV device there is not a significant difference in breakdown voltage between JTE and SMJTE structures.

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Mohammed, Nedjar. "Breakdown Behaviour of Polyesterimide Enamelled Wire Subjected to Thermal Aging." Annales de Chimie - Science des Matériaux 46, no. 3 (June 30, 2022): 163–68. http://dx.doi.org/10.18280/acsm.460308.

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This work concerns the effect of thermal aging on breakdown voltage of polyesterimide enamelled copper wire. Samples are aged in ovens at different temperatures. After aging, a large population of samples were taken and submitted to dielectric breakdown under AC and DC voltages. The material was characterized by TGA and DSC. The values of failure were treated statistically using Weibull model. The study shows a decrease in breakdown voltage with respect to aging time. DC breakdown voltage is greater than AC breakdown voltage. Under DC stress, breakdown voltage is related to the polarity. TGA thermograms exhibit one decomposition stage. The beginning temperature of the mass loss and the residue are greater in the case of pure samples. The glass transition temperature decreases as a function of aging time resulting to a plasticization in the material. In long-term, the decomposition occurs by a scission reaction of imide - bond and ester – bond at interface of polyesterimide-copper. A through discuss of the obtained results is given as well.

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Kim, S. J., Y. S. Choi, S. J. Yu, Sang Cheol Kim, Wook Bahng, and K. H. Lee. "Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination." Materials Science Forum 556-557 (September 2007): 861–64. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.861.

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This paper demonstrates the breakdown voltage characteristics of different edge termination structures including aluminum (Al)-deposited guard ring and Al-deposited guard ringassisted field limiting ring (FLR) for a 4H silicon carbide (SiC) Schottky barrier diode (SBD). In order to investigate the application feasibility of the Al-deposited junction termination to a high breakdown voltage SiC-SBD, two types of SiC-SBDs are fabricated using conventional photolithography, electron beam evaporation, and thermal treatment techniques without ion implantation and thermal oxidation procedures. The breakdown voltage characteristics of the SiCSBDs are significantly dependent on the Al-deposited edge termination. The SiC-SBD without the Al-deposited edge termination shows less than 250 V breakdown voltage, while the Al-deposited guard ring and Al-deposited guard ring-assisted FLR structures show roughly 700 V and 1200 V breakdown voltages, respectively. The prominent improvement in the breakdown voltage characteristics is attributed to the electric field lowering at the Schottky contact edge by the Al deposition edge termination.

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Mohamad, Nur Aqilah, Norhafiz Azis, Jasronita Jasni, Mohd Zainal Abidin Ab Kadir, Robiah Yunus, and Zaini Yaakub. "Impact of Fe3O4, CuO and Al2O3 on the AC Breakdown Voltage of Palm Oil and Coconut Oil in the Presence of CTAB." Energies 12, no. 9 (April 27, 2019): 1605. http://dx.doi.org/10.3390/en12091605.

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This paper presents an experimental study on the AC breakdown voltages of Refined, Bleached and Deodorized Palm Oil (RBDPO) Olein and Coconut Oil (CO) in the presence of conductive (Iron (II,III) Oxide, Fe3O4), semi-conductive (Copper (II) Oxide, CuO) and insulative (Aluminium Oxide, Al2O3) nanoparticles without and with surfactant. The type of surfactant used in this study was Cetyl Trimethyl Ammonium Bromide (CTAB). The volume concentrations range of Fe3O4, CuO and Al2O3 was varied from 0.001% to 0.05%. Transmission Electron Microscope (TEM) was used to characterize the nanoparticles in RBDPO and CO. AC breakdown voltage tests were carried out for RBDPO and CO of which the AC breakdown voltage at 1% probability was determined based on Weibull distribution. It is found that only Al2O3 can improve the average AC breakdown voltage of RBDPO and CO. The AC breakdown voltages at 1% probability for RBDPO and CO can be improved through introduction of Fe3O4, CuO and Al2O3 at certain volume concentrations. Al2O3 provides the highest enhancement of AC breakdown voltages at 1% probability for RBDPO and CO with the highest percentage of improvement can be up to 52%. CTAB has no clear effect on the improvement of AC breakdown voltages of RBDPO and CO based Fe3O4, CuO and Al2O3 nanofluids.

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Dissertations / Theses on the topic "Breakdown voltage"

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Ahmed, Ibrahim Saad M. "Voltage breakdown in polluted insulators." Thesis, University of Exeter, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.236513.

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Coaker, Brian M. "Mechanisms for triggering high-voltage breakdown in vacuum." Thesis, Aston University, 1995. http://publications.aston.ac.uk/8236/.

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The electrical and optical characteristics of a cylindrical alumina insulator (94% Al203) have been measured under ultra-high vacuum (P < 10-8 mBar) conditions. A high-resolution CCD camera was used to make real-time optical recordings of DC prebreakdown luminescence from the ceramic, under conditions where DC current magnitudes were limited to less than 50μA. Two concentric metallized rings formed a pair of co-axial electrodes, on the end-face of the alumina tube; a third 'transparent' electrode was employed to study the effect of an orthogonal electric field upon the radial conduction processes within the metallized alumina specimen. The wavelength-spectra of the emitted light was quantified using a high-speed scanning monochromator and photo-multiplier tube detector. Concurrent electrical measurements were made alongside the recording of optical-emission images. An observed time-dependence of the photon-emission is correlated with a time-variation observed in the DC current-voltage characteristics of the alumina. Optical images were also recorded of pulsed-field surface-flashover events on the alumina ceramic. An intensified high-speed video technique provided 1ms frames of surface-flashover events, whilst 100ns frames were achieved using an ultra high-speed fast-framing camera. By coupling this fast-frame camera to a digital storage oscilloscope, it was possible to establish a temporal correlation between the application of a voltage-pulse to the ceramic and the evolution of photonic emissions from the subsequent surface-flashover event. The electro-optical DC prebreakdown characteristics of the alumina are discussed in terms of solid-state photon-emission processes, that are believed to arise from radiative electron-recombination at vacancy-defects and substitutional impurity centres within the surface-layers of the ceramic. The physical nature of vacancy-defects within an alumina dielectric is extensively explored, with a particular focus placed upon the trapped electron energy-levels that may be present at these defect centres. Finally, consideration is given to the practical application of alumina in the trigger-ceramic of a sealed triggered vacuum gap (TVG) switch. For this purpose, a physical model describing the initiation of electrical breakdown within the TVG regime is proposed, and is based upon the explosive destabilisation of trapped charge within the alumina ceramic, triggering the onset of surface-flashover along the insulator. In the main-gap prebreakdown phase, it is suggested that the electrical-breakdown of the TVG is initiated by the low-field 'stripping' of prebreakdown electrons from vacancy-defects in the ceramic under the influence of an orthogonal main-gap electric field.

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Milošević, Borka. "On voltage stability monitoring and control using multiagent systems." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/16355.

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Boudjelthia, H. "Corona suppression on high voltage direct current systems." Thesis, University of Southampton, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235291.

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Hasan, Samil Mukhlisin Yauma 1967. "Neutron irradiation effects on the breakdown voltage of power MOSFETs." Thesis, The University of Arizona, 1993. http://hdl.handle.net/10150/278361.

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The effect of neutron irradiation on power metal-oxide-semiconductor field effect transistors (power MOSFETs) breakdown voltage has been investigated. Power MOSFETs of both n- and p-channel with manufacturer's rated breakdown voltage between 100 to 500V were radiated up to accumulated neutron fluence of 5x10¹⁴ neutron/cm² Considerable increase in the breakdown voltages were observed in n-type MOSFETs after 10¹³ neutron/cm² and to p-type MOSFETs after 10¹² neutron/cm² The increase in breakdown voltages is due to the decrease in the mean free path caused by the neutron-irradiation-induced defects. The effect of positive trapped charge oxide and the termination structure to the breakdown voltage were considered. S-PISCES 2B device simulation was used to investigate the change in the b coefficient of Chynoweth's law that relates to the mean free path. Two empirical models are presented: one predicts the power MOSFET breakdown voltage after a certain amount of neutron fluence and the other considers the change in the b coefficient after some amount of neutron radiation to predict the change of breakdown voltage in a device simulation.

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Okubo, Hitoshi, Tetsu Shioiri, Mitsutaka Homma, Hiroki Kojima, Ryouki Nishimura, and Keita Aoki. "Enhancement of Breakdown Strength by Microdischarge under Impulse Voltage Applications in Vacuum." IEEE, 2010. http://hdl.handle.net/2237/14534.

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Suchanek, Richard Donald III. "Breakdown Voltage Performances of Aluminum and Copper Conductor Wire Under Compression Stresses." TopSCHOLAR®, 2016. http://digitalcommons.wku.edu/theses/1606.

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In the global, competitive market of energy transformation, increased operational expenses and depletion of raw materials have resulted in companies pursuing alternate materials to reduce consumer costs. In electrical applications, energy is transformed using materials with high electrical conductive properties. The conductive material used to transmit a signal is called conductor wire and is comprised of any material that has the ability to move charged particles from one point to another without propagation or delay. The conductor wire in many applications is encapsulated in epoxy resin called enamel. The enamel is the insulation system that provides necessary dielectric clearances to prevent voltage leakage. The most common form of energy transformation is the electric motor. Both copper and aluminum conductor wire are commonly used in electric motors, but copper is preferred due to thermal and electrical properties. However, there is a significant economic incentive to convert to aluminum conductor wire. Limited white papers are available comparing the performances of the two materials; the research is limited to physical and electrical performances of the raw material and does not take into considering the insulation. The conductor wire, which includes the insulation, is susceptible to damage during the manufacturing process and is an inherent risk if not fully understood. During the blocking process, the conductor wire is pushed and compressed into lamination slots. This process changes the conductor wire outer diameter to accommodate void spaces within the lamination slots. The percentage of slot area occupied by the conductor wire is known as slot fill. The higher the slot fill, the more wire occupying the available space. The higher the slot fill, the more force required to fill the slots. High slot fill motor designs provide a performance advantage with little associated cost. The more wire pressed into the slot, the higher the potential efficiency gains. However, high slot fill motors are more susceptible to damage. The study is designed to evaluate and measure the durability of aluminum and copper conductor wire under simulated compression stresses. Utilizing this information, electric motor manufacturers can push current design limits without affecting conductor wire quality and reliability.

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Meng, Wentao. "Simulation Studies of High Breakdown-Voltage GaN and β-Ga2O3 Vertical Device." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu155558352423293.

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Ghosh, Gargi. "Dependence of Set, Reset and Breakdown Voltages of a MIM Resistive Memory Device on the Input Voltage Waveform." Thesis, Virginia Tech, 2015. http://hdl.handle.net/10919/52704.

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Owing to its excellent scaling potential, low power consumption, high switching speed, and good retention, and endurance properties, Resistive Random Access Memory (RRAM) is one of the prime candidates to supplant current Nonvolatile Memory (NVM) based on the floating gate (FG) MOSFET transistor, which is at the end of its scaling capability. The RRAM technology comprises two subcategories: 1) the resistive phase change memory (PCM), which has been very recently deployed commercially, and 2) the filamentary conductive bridge RAM (CBRAM) which holds the promise of even better scaling potential, less power consumption, and faster access times. This thesis focuses on several aspects of the CBRAM technology. CBRAM devices are based on nanoionics transport and chemo-physical reactions to create filamentary conductive paths across a dielectric sandwiched between two metal electrodes. These nano-size filaments can be formed and ruptured reliably and repeatedly by application of appropriate voltages. Although, there exists a large body of literature on this topic, many aspects of the CBRAM mechanisms and are still poorly understood. In the next paragraph, the aspects of CBRAM studied in this thesis are spelled out in more detail. CBRAM cell is not only an attractive candidate for a memory cell but is also a good implementation of a new circuit element, called memristor, as postulated by Leon Chua. Basically, a memristor, is a resistor with a memory. Such an element holds the promise to mimic neurological switching of neuron and synapses in human brain that are much more efficient than the Neuman computer architecture with its current CMOS logic technology. A memristive circuitry can possibly lead to much more powerful neural computers in the future. In the course of the research undertaken in this thesis, many memristive properties of the resistive cells have been found and used in models to describe the behavior of the resistive switching devices. The research performed in this study has also an immediate commercial application. Currently, the semiconductor industry is faced with so-called latency scaling dilemma. In the past, the bottleneck for the signal propagation was the time delay of the transistor. Today, the transistors became so fast that the bottleneck for the signal propagation is now the RC time delay of the interconnecting metal lines. Scaling drives both, resistance and parasitic capacitance of the metal lines to very high values. In this context, one observes that resistive switching memory does not require a Si substrate. It is therefore an excellent candidate for its implementation as an o n-chip memory above the logic circuits in the CMOS back-end, thus making the signal paths between logic and memory extremely short. In the framework of a Semiconductor Research Corporation (SRC) project with Intel Corporation, this thesis investigated the breakdown and resistive switching properties of currently deployed low k interlayer dielectrics to understand the mechanisms and potential of different material choices for a realization of an RRAM memory to be implemented in the back-end of a CMOS process flow.
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Lipham, Mark Lawrence Kirkici Hulya. "Electrical breakdown studies of partial pressure argon under Khz range pulse voltages." Auburn, Ala., 2010. http://hdl.handle.net/10415/2044.

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Books on the topic "Breakdown voltage"

1

Mok, Philip Kwok Tai. Optimization of breakdown voltage in high voltage integrated circuits. Ottawa: National Library of Canada, 1990.

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Coaker, Brian Moreland. Mechanisms for triggering high-voltage breakdown in vacuum. Birmingham: Aston University. Electrical Engineering and Applied Physics, 1995.

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Fromm, Udo. Partial discharge and breakdown testing at high DC voltage. Delft: Technische Universiteit Delft, 1995.

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S, Zaengl W., and Kuffel J, eds. High voltage engineering: Fundamentals. 2nd ed. Oxford: Butterworth-Heinemann, 2000.

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Fujishima, Naoto. A novel trench lateral power mosfet with high breakdown voltage and low on-resistance. Ottawa: National Library of Canada, 1998.

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Mazen, Abdel-Salam, ed. High-voltage engineering: Theory and practice. 2nd ed. New York: M. Dekker, 2000.

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Jaberansari, Ahmad. The variation of breakdown voltage with temperature for several low-flammability transformer fluids and building of an optimal design using one fluid. Salford: University of Salford, 1986.

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Juha, Kostamovaara, and Vainshtein Sergey, eds. Breakdown phenomena in semiconductors and semiconductor devices. Singapore: World Scientific, 2005.

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Kuffel, E., W. S. Zaengl, and J. Kuffel. High Voltage Engineering Fundamentals (Newnes). 2nd ed. Newnes, 2000.

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Kuffel, E., P. Hammond, and W. S. Zaengl. High Voltage Engineering: Fundamentals. Elsevier Science & Technology Books, 2013.

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Book chapters on the topic "Breakdown voltage"

1

Gooch, Jan W. "Breakdown Voltage." In Encyclopedic Dictionary of Polymers, 92. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_1559.

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Baliga, B. Jayant. "Breakdown Voltage." In Fundamentals of Power Semiconductor Devices, 90–165. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-47314-7_3.

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Weik, Martin H. "breakdown voltage." In Computer Science and Communications Dictionary, 144. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_1833.

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Baliga, B. Jayant. "Breakdown Voltage." In Fundamentals of Power Semiconductor Devices, 89–170. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93988-9_3.

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Gooch, Jan W. "Dielectric Breakdown Voltage." In Encyclopedic Dictionary of Polymers, 213. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_3581.

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Venkatesh, S. K., and M. S. Naidu. "Voltage-Time Characteristics of Breakdown in SF6." In Gaseous Dielectrics VII, 593–98. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4899-1295-4_115.

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Singh, Udaybir, and A. K. Sinha. "High-Voltage Breakdown Study: Possibilities and Precautions." In SpringerBriefs in Applied Sciences and Technology, 85–91. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-4610-3_5.

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Schwirzke, Fred. "Laser Induced Breakdown and High Voltage Induced Vacuum Breakdown on Metal Surfaces." In Laser Interaction and Related Plasma Phenomena, 335–57. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3804-2_24.

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Qiu, Zhibin, Jiangjun Ruan, and Shengwen Shu. "Power Frequency Breakdown Voltage Prediction of Air Gaps." In Power Systems, 109–33. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-10-5163-0_5.

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Forsyth, E. B., R. B. Britton, J. Dean, J. E. Jensen, and K. Minati. "A Supercritical Helium Facility for Measuring High-Voltage Breakdown." In Advances in Cryogenic Engineering, 109–16. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4613-9847-9_13.

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Conference papers on the topic "Breakdown voltage"

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Asimakopoulou, Fani E., Ioannis F. Gonos, and Ioannis A. Stathopulos. "Uncertainty of Soil Breakdown Voltage." In 2010 International Conference on High Voltage Engineering and Application (ICHVE). IEEE, 2010. http://dx.doi.org/10.1109/ichve.2010.5640726.

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Onal, E. "Breakdown characteristics of CO." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990759.

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Onal, E. "Breakdown characteristics of N." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990760.

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Gaxiola, E. H. R. "Streamers and transition to breakdown." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990687.

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Graf, R. "Statistical breakdown behavior of N." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990708.

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Ruemenapp, T. "Dielectric breakdown in aluminium nitride." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990870.

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Chmura, L. A., P. H. F. Morshuis, E. Gulski, and J. J. Smit. "Time-to-breakdown and breakdown voltage for oil-impregnated insulation subjected to thermal aging." In 2012 International Conference on High Voltage Engineering and Application (ICHVE). IEEE, 2012. http://dx.doi.org/10.1109/ichve.2012.6357028.

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8

Pecastaing, L. "Investigation of breakdown characteristics of N." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990740.

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Ziomek, W. "Breakdown and prebreakdown characteristics of SF." In 11th International Symposium on High-Voltage Engineering (ISH 99). IEE, 1999. http://dx.doi.org/10.1049/cp:19990744.

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Duan, Wenting, Donghua Liu, Haiyang Ling, Ying Cai, Feng Jin, and Wensheng Qian. "Study of Breakdown Voltage Improvement of High-Voltage PLDMOS." In 2023 China Semiconductor Technology International Conference (CSTIC). IEEE, 2023. http://dx.doi.org/10.1109/cstic58779.2023.10219340.

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Reports on the topic "Breakdown voltage"

1

Chu, Thanh Duy. High frequency breakdown voltage. Office of Scientific and Technical Information (OSTI), March 1992. http://dx.doi.org/10.2172/79724.

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Moore, Christopher, Paul Clem, Laura Biedermann, William Miller, Mark Stavig, and Christian Turner. Encapsulant Void Breakdown Voltage Modeling & Experiments. Office of Scientific and Technical Information (OSTI), November 2020. http://dx.doi.org/10.2172/1808742.

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Williamson, Kenneth, Sean Simpson, Rebecca Coats, Roy Jorgenson, Harold Hjalmarson, and Michael Pasik. High-voltage atmospheric breakdown across intervening rutile dielectrics. Office of Scientific and Technical Information (OSTI), September 2013. http://dx.doi.org/10.2172/1096248.

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4

Ekdahl, Carl August. High-Voltage Breakdown Penalties for the Beam-Breakup Instability. Office of Scientific and Technical Information (OSTI), November 2016. http://dx.doi.org/10.2172/1334090.

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Neudeck, Philip G., and Christian Fazi. Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers. Fort Belvoir, VA: Defense Technical Information Center, January 1998. http://dx.doi.org/10.21236/ada359099.

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Jones, Robert, Molly Creagar, Michael Musty, Randall Reynolds, Scott Slone, and Robyn Barbato. A 𝘬-means analysis of the voltage response of a soil-based microbial fuel cell to an injected military-relevant compound (urea). Engineer Research and Development Center (U.S.), November 2022. http://dx.doi.org/10.21079/11681/45940.

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Abstract:

Biotechnology offers new ways to use biological processes as environmental sensors. For example, in soil microbial fuel cells (MFCs), soil electro-genic microorganisms are recruited to electrodes embedded in soil and produce electricity (measured by voltage) through the breakdown of substrate. Because the voltage produced by the electrogenic microbes is a function of their environment, we hypothesize that the voltage may change in a characteristic manner given environmental disturbances, such as the contamination by exogenous material, in a way that can be modelled and serve as a diagnostic. In this study, we aimed to statistically analyze voltage from soil MFCs injected with urea as a proxy for gross contamination. Specifically, we used 𝘬-means clustering to discern between voltage output before and after the injection of urea. Our results showed that the 𝘬-means algorithm recognized 4–6 distinctive voltage regions, defining unique periods of the MFC voltage that clearly identify pre- and postinjection and other phases of the MFC lifecycle. This demonstrates that 𝘬-means can identify voltage patterns temporally, which could be further improve the sensing capabilities of MFCs by identifying specific regions of dissimilarity in voltage, indicating changes in the environment.

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Author, Not Given. Healing defects in anodic aluminum oxide coatings using sol-gel materials -- A screening study using the product of capacitance and breakdown voltage as a figure of merit. Office of Scientific and Technical Information (OSTI), December 1995. http://dx.doi.org/10.2172/10130058.

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