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Academic literature on the topic 'Brightness and threshold voltage'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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Journal articles on the topic "Brightness and threshold voltage"

Fuh, A., R. P. Gallinger, and O. Caporaletti. "The effect of co-evaporation on ZnS:Mn electroluminescent characteristics." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 1060–63. http://dx.doi.org/10.1139/p87-174.

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We present a discussion of the brightness–voltage (B–V) response of thin-film electroluminescent (TFEL) devices prepared by the simultaneous evaporation of ZnS and Mn (or MnS) using two separate sources. Crystal structure, threshold voltage, saturation brightness, and memory margin of the B–V characteristics have been studied as a function of the deposition rate of dopant material relative to ZnS. Optimum annealing conditions of the devices are also given. These results indicate that co-evaporation can be advantageously employed to fabricate memory TFEL display devices with excellent characteristics.

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Ramrakhiani, Meera, Nitendra Kumar Gautam, Kamal Kushwaha, Sakshi Sahare, and Pranav Singh. "Electroluminescence in Chalcogenide Nanocrystals and Nanocomposites." Defect and Diffusion Forum 357 (July 2014): 127–69. http://dx.doi.org/10.4028/www.scientific.net/ddf.357.127.

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Several research groups have reported that nanocrystalline II-VI semiconductors show enhanced luminescence, increased oscillator strength and shorter response time. Nanocrystalline powder samples of CdS, CdSe, ZnS and ZnSe nanocrystals and their composites with PVA and PVK have been prepared by chemical route. SEM. TEM and AFM images indicate agglomeration of particles. XRD reveal the crystal structure and size in nanometer range and absorption spectra show increased band gap due to quantum confinement.The EL studies on nanocrystalline powder samples and nanocrystal/polymer composites have shown that the light emission starts at certain threshold voltage, different for different specimens and then increases with increasing voltage. It is found that smaller nanocrystals have lower threshold voltage and higher EL brightness. It is observed that nanocomposite give much higher electroluminescence starting at lower voltage and increasing very fast with the voltage as compared to nanocrystalline powder. The emission spectra are found to depend on the material, crystalline size and doping. Electroluminescence in undoped and doped chalcogenide nanocrystals and nanocomposites is reviewed in this paper. In nanosize regime, electroluminescence (EL) is governed by the size quantization effect. Contents of Paper

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Krause, S. J., and W. W. Adams. "Recent developments in low-voltage SEM of polymers." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 866–67. http://dx.doi.org/10.1017/s0424820100150162.

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Over the past decade low voltage scanning electron microscopy (LVSEM) of polymers has evolved from an interesting curiosity to a powerful analytical technique. This development has been driven by improved instrumentation and in particular, reliable field emission gun (FEG) SEMs. The usefulness of LVSEM has also grown because of an improved theoretical and experimental understanding of sample-beam interactions and by advances in sample preparation and operating techniques. This paper will review progress in polymer LVSEM and present recent results and developments in the field.In the early 1980s a new generation of SEMs produced beam currents that were sufficient to allow imaging at low voltages from 5keV to 0.5 keV. Thus, for the first time, it became possible to routinely image uncoated polymers at voltages below their negative charging threshold, the "second crossover", E2 (Fig. 1). LVSEM also improved contrast and reduced beam damage in sputter metal coated polymers. Unfortunately, resolution was limited to a few tenths of a micron due to the low brightness and chromatic aberration of thermal electron emission sources.

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Singh, A., and H. L. Vishwakarma. "Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation." Materials Science-Poland 33, no. 4 (December 1, 2015): 751–59. http://dx.doi.org/10.1515/msp-2015-0112.

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AbstractIn this work, zinc oxide (ZnO) nanorods were obtained by a simple chemical precipitation method in the presence of capping agent: polyvinyl pyrrolidone (PVP) at room temperature. X-ray diffraction (XRD) result indicates that the synthesized undoped ZnO nanorods have hexagonal wurtzite structure without any impurities. It has been observed that the growth direction of the prepared ZnO nanorods is [1 0 1]. XRD analysis revealed that the nanorods have the crystallite size of 49 nm. Crystallite size is calculated by Debye-Scherrer formula and lattice strain is calculated by Williomson-Hall equation. Cell volume, Lorentz factor, Lorentz polarization factor, bond length, texture coefficient, lattice constants and dislocation density have also been studied. We also compared the interplanar spacings and relative peak intensities with their standard values at different angles. The scanning electron microscope (SEM) images confirmed the size and shape of these nanorods. It has been found that the diameter of the nanorods ranges from 1.52 μm to 1.61 μm and the length is about 4.89 μm. It has also been observed that at room temperature ultraviolet visible (UV-Vis) absorption band is around 355 nm (blue shifted as compared to the bulk). The average particle size has also been calculated by mathematical model of effective mass approximation equation, using UV-Vis absorption peak. Finally, the bandgap has been calculated using UV-absorption peak. Electroluminescence (EL) studies show that emission of light is possible at very small threshold voltage and it increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

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Saad, Said, and Lotfi Hassine. "High Efficiency Driver for AMOLED with Compensation." Advances in Electronics 2015 (February 10, 2015): 1–5. http://dx.doi.org/10.1155/2015/954783.

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A new proposed compensation driver circuit of flat-panel display (FPD) based on organic light emitting diodes (OLEDs) and on poly-crystalline silicon thin-film transistors (poly-Si TFTs) is presented. This driver circuit is developed for an active-matrix organic light-emitting-diode (AMOLED) display and its efficiency is verified compared with the conventional configuration with 2 TFTs. According to results, this circuit is suitable to achieve acceptable level for power consumption, high contrast, maximum gray levels, and better brightness. And, to show this, a stable driving scheme is developed for circuit with much compensation such as against the data degradation, the threshold voltage dispersions of TFT drive, and suppression of TFT leakage current effect.

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Wang, Lin Bo, Hong Kun He, Lei Shi, Jin Jin Yang, and Qian Ni Feng. "A New Duty Cycle Control Strategy for Digital Constant-Current LED Drive Based on Buck-Boost Topology." Applied Mechanics and Materials 392 (September 2013): 676–81. http://dx.doi.org/10.4028/www.scientific.net/amm.392.676.

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This paper proposes a new digital constant-current control method for high-power LED drive based on buck-boost topology. In this control system, buck-boost topology is used as the power conversion. The output voltage can be either higher or lower than the input voltage in buck-boost topology. Therefore, it solves the problem that in the buck topology the input voltage is required to be always higher than the output voltage. Furthermore, according to the input and output parameters, the duty cycle data which are used to maintain output current constant can be calculated in advance, and stored in the embedded chip. Thus, it can reduce the calculation of the embedded chip and solves the problem that the existing digital constant-current controllers need the high-speed analog-to-digital converter. In addition, in order to reduce the error generated in above calculation, the double threshold feedback circuit is used to fine-tune the duty cycle and makes the output current more steady and accurate. Meanwhile, due to adopting full-digital control, the brightness and flicker frequency of load LED can be conveniently regulated by modifying the system firmware. Therefore, this method can apply to the device of illumination, lighting decoration, visible light communication and so on.

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Fan, Ching-Lin, Hao-Wei Chen, Hui-Lung Lai, Bo-Liang Guo, and Bohr-Ran Huang. "Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays." International Journal of Photoenergy 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/604286.

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This paper proposes a novel pixel circuit design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays that use low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) as driving element. The automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator was used to verify that the proposed pixel circuit, which comprises five transistors and one capacitor, can supply uniform output current. The voltage programming method of the proposed pixel circuit comprises three periods: reset, compensation with data input, and emission periods. The simulated results reflected excellent performance. For instance, whenΔVTH=±0.33 V, the average error rate of the OLED current variation was low (<0.8%), and whenΔVTH_OLED=+0.33 V, the error rate of the OLED current variation was 4.7%. Moreover, when theI×R(current × resistance) drop voltage of a power line was 0.3 V, the error rate of the OLED current variation was 5.8%. The simulated results indicated that the proposed pixel circuit exhibits high immunity to the threshold voltage deviation of both the driving poly-Si TFTs and OLEDs, and simultaneously compensates for theI×Rdrop voltage of a power line.

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Dwivedi, Amrita, Nisha Dwivedi, Nitendra Gautam, Meera Ramrakhiani, and P. K. Khare. "Synthesis and Electroluminescence of Silver Doped ZnS/PVK Nanocomposite." Defect and Diffusion Forum 361 (January 2015): 231–43. http://dx.doi.org/10.4028/www.scientific.net/ddf.361.231.

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Sulfide based luminescent materials have attracted a lot of attention for a wide range of photo-and electroluminescence applications. Among the sulfides, ZnS is promising host material for development of phosphors in different visible emission bands. Doping of Ag can affect the electroluminescence of the host material. Incorporation of host ZnS into the polymer matrix is one of the best method to display their special functions, which stabilize the nanoparticles. Here we report a synthesis and electroluminescence of silver doped ZnS/PVK nanocomposites thin films. Reported films were prepared by using chemical route with varying Ag doping and ZnS loading in the composite. Structural and morphological characterization were carried out through XRD and SEM techniques, which confirmed the particles in nanoregime. Though optical absorption spectra and band gap of ZnS semiconductor nanoparticles in ZnS:Ag/PVK matrix were estimated, and using EMA model, particle size was calculated which supports the results of XRD. Electroluminescence of nanocomposite samples was studied and it was found that threshold voltage depends on doping of Ag and also on loading of ZnS. Voltage brightness characteristics support the production of EL by acceleration-collision mechanism.Contents of Paper

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Gautam, Nitendra Kumar, Meera Ramrakhiani, R. K. Kuraria, and S. R. Kuraria. "Electroluminescence in Organically Capped Cd_1-xZn_xSe Chalcogenide Nanocrystals." Defect and Diffusion Forum 361 (January 2015): 215–30. http://dx.doi.org/10.4028/www.scientific.net/ddf.361.215.

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Currently there is a great interest in II–VI semiconductor nanoparticles, particularly organically capped soluble particles of cadmium or zinc sulphide and selenide, for their ready to use application in devices. For electroluminescence (EL) devices, it is expected to cover a broad spectrum and to tune various specific colours by preparing Cd1-xZnx Se instead of CdSe and ZnSe. Ternary alloys have composition dependent properties; therefore Cd1-xZnxSe has attracted much attention in the fields of luminescence and optoelectronic devices. It has wide optical band-gap and good stability with respect to environment. In this study, Cd1-xZnxSenanoparticles have been synthesized by using starch as a capping agent through a chemical synthesis route at room temperature. Samples have been prepared varying composition factor ‘x’ in ternary alloy Cd1-xZnxSe. Cubic structure of all has been confirmed by XRD. Crystallite size calculated from XRD was found in the range of 3-5 nm and it was observed that size reduces on increasing Zn content in ternary compound. Optical absorption spectra showed the blue shift in absorption edge with increasing Zn content. Band gap has been obtained by absorption studies and increase in band gap observed on increasing Zn content in the compound. Electroluminescence studies reveal that lower threshold voltage is required for samples with lower ‘x’ value. The Brightness increases on increasing the voltage above threshold voltage and the variation pattern is almost exponential for all samples. The voltage-current curve represents ohmic nature of the EL cell. Impedance was found to increase on increasing ‘x’ value. The increase in EL intensity is faster for higher frequency. EL spectra revealed that light emission is in violet-green region corresponding to band gap for both Cd0.75 Zn 0.25Se and Cd0.5 Zn 0.5Se, with a slight blue shift on increasing Zn content. A ternary system Cd1–xZnxSe, may be engineered better for application purpose by suitably choosing the composition parameter ‘x’.Contents of Paper

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Laszczyk, Karolina Urszula. "Field Emission Cathodes to Form an Electron Beam Prepared from Carbon Nanotube Suspensions." Micromachines 11, no. 3 (February 29, 2020): 260. http://dx.doi.org/10.3390/mi11030260.

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In the first decade of our century, carbon nanotubes (CNTs) became a wonderful emitting material for field-emission (FE) of electrons. The carbon nanotube field-emission (CNT-FE) cathodes showed the possibility of low threshold voltage, therefore low power operation, together with a long lifetime, high brightness, and coherent beams of electrons. Thanks to this, CNT-FE cathodes have come ahead of increasing demand for novel self-sustaining and miniaturized devices performing as X-ray tubes, X-ray spectrometers, and electron microscopes, which possess low weight and might work without the need of the specialized equipped room, e.g., in a harsh environment and inaccessible-so-far areas. In this review, the author discusses the current state of CNT-FE cathode research using CNT suspensions. Included in this review are the basics of cathode operation, an evaluation, and fabrication techniques. The cathodes are compared based on performance and correlated issues. The author includes the advancement in field-emission enhancement by postprocess treatments, incorporation of fillers, and the use of film coatings with lower work functions than that of CNTs. Each approach is discussed in the context of the CNT-FE cathode operating factors. Finally, we discuss the issues and perspectives of the CNT-FE cathode research and development.

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Dissertations / Theses on the topic "Brightness and threshold voltage"

Tochel, Claire. "Evaluation of contrast threshold measurements and simultaneous brightness ratios in the diagnosis of glaucoma." Thesis, University of Glasgow, 2001. http://theses.gla.ac.uk/4879/.

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There is considerable dissatisfaction with the reliability and sensitivity of the methods used to assess the glaucomatous visual field. Two types of visual field test, which have been proposed as having potential in diagnosing glaucomatous visual field defects, have been modified and tested on a group of patients from a glaucoma clinic, a group of age-matched control subjects and a younger control group. 1. A grating pattern was generated using a laser interferometer which projected a large diameter image onto the retina independent of the subject's refractive error. The experimental set up which produced the most reliable and consistently low contrast threshold values in normal subjects was sought. The display characteristics which were examined included different orientations for the field quadrants as projected to the subject; stationary and flickering patterns using a variety of flicker generation methods; red and green light sources; and concentric or vertical sinusoidal grating patterns. Ultimately the optimal display was found to be a stationary image consisting of a green, vertical sinusoidal grating pattern. Arcuate regions of the visual field (at 10 to 20° from fixation) were stimulated in 4 distinct, obliquely oriented quadrants and a low spatial frequency (one cycle per degree) was chosen. 2. Normal limits were obtained from age-matched control subjects for comparison with the results for the patients from the glaucoma clinic. In the patient group, of the 13 who completed the test, 9 individuals were identified as abnormal with one or more of their contrast threshold scores exceeding that limit. The patients' Friedmann visual field plots were analysed and the amount of loss in each quadrant was quantified. There was a positive correlation between the quantified visual field loss and contrast threshold scores in 6 patients, a statistically borderline correlation in 2 patients and the absence of a correlation was found in 5 patient's results. The results for a subgroup of 6 visually abnormal eyes (not affected by glaucoma) excluded from the age-matched control group are also described. Their visual defects included mild cataract, amblyopia and retinal detachment. There were no clear abnormal results in 5 of the eyes in this group; however, in one subject with retinal scarring due to an infection, there was a distinct elevation of contrast threshold in the affected eye. Humphrey visual field plots were obtained for all but one of the age-matched control subjects. 3. Simultaneous brightness ratios (SBR) have previously been shown to provide an indication of'glaucomatous damage. The same subject groups as described above were tested. SBRs were obtained for central vision in both eyes of subjects (inter-ocular ratio). This technique was now extended for the first time to paired regions within each eye (intra-ocular ratios) producing 'nasal I temporal' and 'upper I lower' ratios. In each test the subject controlled the brightness ratio which was changed in a smoothly graduated and continuou8 way. The most effective procedure for recording repeatable SBRs was first explored, and it was determined that these could be best obtained by alternating the start point of the graduated filter position. For each subject, 5 ratios were obtained: inter-ocular SBR; upper I lower intra-ocular SBR for right eye and left eye; and nasal I temporal intra-ocular SBR for right eye and left eye. 4. Normal limits were obtained from age-matched control subjects for comparison with the results for the patients from the glaucoma clinic. In each of the 5 SBR tests carried out, these limits were wide, reflecting considerable variation in the normal results. Of the 14 patients who completed the tests, 5 were identified as abnormal by one or more of their SBRs being outside normal limits. Three of these were identified as abnormal by their inter-ocular SBRs alone, one was abnormal according to his upper I lower intra-ocular SBR alone and one patient had an abnormal inter-ocular SBR and an abnormal intra-ocular SBR. The corresponding regions of the patients' Friedmann visual fields were quantified, and these values were used to calculate visual field loss ratios. There was a positive correlation between the visual field loss ratios and SBRs in 3 patients, but no correlation in 11 patients. In the sub-group of 6 visually abnormal eyes without glaucoma, mild cataract appeared not to adversely affect SBR. Mean SBRs were normal in the subject with retinal detachment but there was evidence of an enhanced amount of variation in the readings. Two subjects with a damaged retina and one with an amblyopic eye did produce abnormal inter-ocular SBRs, with the normal eye being significantly more sensitive in both cases.

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Caicedo, Jhon Alexander Gomez. "CMOS low-power threshold voltage monitors circuits and applications." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2016. http://hdl.handle.net/10183/144080.

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Um monitor de tensão de limiar (VT0) é um circuito que, idealmente, entrega o valor do VT0 como uma tensão na saída, para uma determinada faixa de temperatura, sem a necessidade de polarização externa, configurações paramétricas, ajuste de curvas ou qualquer cálculo subsequente. Estes circuitos podem ser usados em sensores de temperatura, referências de tensão e corrente, dosímetros de radiação e outras aplicações, uma vez que a dependência do VT0 nas condições de operação é um aspecto bem modelado. Além disso, estes circuitos podem ser utilizados para monitoramento de processos de fabricação e para compensação da variabilidade do processo, uma vez que o VT0 é um parâmetro chave para o comportamento do transistor e sua modelagem. Nesta tese, são apresentadas três novas topologias de circuitos, duas são monitores de VT0 NMOS e a terceira é um monitor de VT0 PMOS. As três estruturas são topologias de circuito auto-polarizadas que não utilizam resistências, e apresentam alta rejeição a variações na alimentação, baixa sensibilidade de Linea, e permitem a extração direta da tensão de limiar para grandes intervalos de temperatura e de tensão de alimentação, com pequeno erro. Sua metodologia de projeto é baseada no modelo unificado controlado por corrente (UICM), um modelo MOSFET que é contínuo, desde o nível de inversão fraca a forte e para as regiões de operação de triodo e saturação. Os circuitos ocupam uma pequena área de silício, consomem apenas dezenas de nanowatts, e podem ser implementados em qualquer processo padrão CMOS digital, uma vez que só utilizam transistores MOS (não precisa de nenhum resistor). Os monitores de VT0 são utilizados em diferentes aplicações, a fim de investigar a sua funcionalidade e comportamento como parte de um sistema. As aplicações variam de uma tensão de referência, que apresenta um desempenho comparável ao estado da arte, para uma configuração que permite obter uma menor variabilidade com processo na saída de um circuito auto-polarizado que gera um tensão CTAT. Além disso, explorando a capacidade de funcionar como um gerador de corrente específica (ISQ) que os monitores de VT0 aqui apresentados oferecem, introduz-se um novo circuito auto-polarizado que gera um tensão CTAT, que é menos sensível a variações de processo, e pode ser usado em referências de tensão band-gap.
A threshold voltage (VT0) monitor is a circuit that ideally delivers the estimated VT0 value as a voltage at its output, for a given temperature range, without external biases, parametric setups, curve fitting or any subsequent calculation. It can be used in temperature sensors, voltage and current references, radiation dosimeters and other applications since the MOSFET VT0 dependence on the operation conditions is a very well modeled aspect. Also, it can be used for fabrication process monitoring and process variability compensation, since VT0 is a key parameter for the transistor behavior and modeling. In this thesis, we present three novel circuit topologies, two of them being NMOS VT0 monitors and the last one being a PMOS VT0 monitor. The three structures are resistorless self-biased circuit topologies that present high power supply rejection, low line sensitivity, and allow the direct extraction of the threshold voltage for wide temperature and power supply voltage ranges, with small error. Its design methodology is based on the Unified Current Control Model (UICM), a MOSFET model that is continuous from weak to strong inversion and from triode to saturation regions. The circuits occupy small silicon area, consume just tens of nanoWatts, and can be implemented in any standard digital CMOS process, since they only use MOS transistors (does not need any resistor). The VT0 monitors are used in different applications in order to prove their functionality, and behavior as part of a system. The applications vary from a reference voltage, that presents performance comparable with state-of-the-art works, to a configuration that allows to obtain a lower process variability, in the output of a self-biased circuit that generates a complementary to the absolute temperature (CTAT) voltage. In addition, exploiting the ability to operate as an specific current (ISQ) generator, that the VT0 monitors presented here offer, we introduced a new self-biased circuit that produces a CTAT voltage and is less sensitive to process variations, and can be used in band-gap voltage references.

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Wang, Yanbin. "Threshold voltage control by backgating in fully depleted SOI CMOS." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0007/MQ43350.pdf.

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Wang, Yanbin Carleton University Dissertation Engineering Electronics. "Threshold voltage control by backgating in fully depleted SOI CMOS." Ottawa, 1999.

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Narendra, Siva G. (Siva Gurusami) 1971. "Effect of MOSFET threshold voltage variation on high-performance circuits." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8341.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.
Includes bibliographical references (p. 95-101).
The driving force for the semiconductor industry growth has been the elegant scaling nature of CMOS technology. In future CMOS technology generations, supply and threshold voltages will have to continually scale to sustain performance increase, limit energy consumption, control power dissipation, and maintain reliability. These continual scaling requirements on supply and threshold voltages pose several technology and circuit design challenges. One such challenge is the expected increase in threshold voltage variation due to worsening short channel effect. This thesis will address three specific circuit design challenges arising from increased threshold voltage variation and present prospective solutions. First, with supply voltage scaling, control of die-to-die threshold voltage variation becomes critical for maintaining high yield. An analytical model will be developed for existing circuit technique that adaptively biases the body terminal of MOSFET devices to control this threshold voltage variation. Based on this model, recommendations on how to effectively use the technique in future technologies will be presented. Second, with threshold voltage scaling, sub-threshold leakage power is expected to be a significant portion of total power in future CMOS systems. Therefore, it becomes imperative to accurately predict and minimize leakage power of such systems, especially with increasing within-die threshold voltage variation. A model that predicts system leakage based on first principles will be presented and a circuit technique to reduce system leakage without reducing system performance will be discussed.
(cont.) Finally, due to different processing steps and short channel effects, threshold voltage of devices of same or different polarities in the same neighborhood may not be matched. This will introduce mismatch in the device drive currents that will not be acceptable in some high performance circuits. In the last part of the thesis, voltage and current biasing schemes that minimize the impact of neighborhood threshold voltage mismatch will be introduced.
by Siva G. Narendra.
Ph.D.

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Wang, Annie I. (Annie I.-Jen) 1981. "Threshold voltage in pentacene field effect transistors with parylene dielectric." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/17998.

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Thesis (M. Eng. and S.B.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2004.
Includes bibliographical references (p. 59-63).
Organic field effect transistors (OFETs) offer a suitable building block for many flexible, large-area applications such as display backplanes, electronic textiles, and robotic skin. Besides the organic semiconductor itself, an important area in the development of OFETs is the gate dielectric material. In this thesis the organic polymer parylene is studied as a gate dielectric for pentacene OFETs. The three main areas of study were: (1) parylene's performance as a dielectric, (2) possible improvement of OFETs by surface treatments, and (3) the effects of interface traps on threshold voltage and parasitic bulk conductivity. Parylene was found to provide a favorable, hydrophobic interface for pentacene growth, yielding transistors with mobilities > 0.5cm²/Vs at -100V. While the two surface treatments explored did increase contact angle by 10-20⁰, neither the ammonium sulfide nor the polystyrene treatment significantly improved pentacene packing or mobility. Modification of the parylene surface using an oxygen plasma introduced traps at the semiconductor-dielectric interface, observable through a variety of characterization techniques. A model is developed to explain how the fixed and mobile charges these traps introduce influence the threshold voltage and parasitic conductivity in the device.
by Annie I. Wang.
M.Eng.and S.B.

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Nirmala, Ithihasa Reddy. "Threshold Voltage Defined Switches and Gates to Prevent Reverse Engineering." Scholar Commons, 2016. http://scholarcommons.usf.edu/etd/6555.

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1Semiconductor supply chain is increasingly getting exposed to variety of security attacks such as Trojan insertion, cloning, counterfeiting, reverse engineering (RE), piracy of Intellectual Property (IP) or Integrated Circuit (IC) and side-channel analysis due to involvement of untrusted parties. In this thesis, we use threshold voltage-defined switches to design a logic gate that will camouflage the conventional logic gates both logically and physically to resist RE and IP piracy. The proposed gate can function as NAND, AND, NOR, OR, XOR, and XNOR robustly using threshold defined switches. We also propose a flavor of camouflaged gate that represents reduced functionality (NAND, NOR and NOT) at much lower overhead. The camouflaged design operates at nominal voltage and obeys conventional reliability limits. A small fraction of gates can be camouflaged to increase the RE effort extremely high. Simulation results indicate 46-53% area, 59-68% delay and 52-76% power overhead when 5-15% gates are identified and camouflaged using the proposed gate. A significant higher RE effort is achieved when the proposed gate is employed in the netlist using controllability, observability and hamming distance sensitivity based gate selection metrics. 1 Information included in this chapter is reprinted from [19] with permission. Copyright permission included in Appendix B.

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Akhavan, Fomani Arash. "Threshold Voltage Instability and Relaxation in Hydrogenated Amorphous Silicon Thin Film Transistors." Thesis, University of Waterloo, 2005. http://hdl.handle.net/10012/769.

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This thesis presents a study of the bias-induced threshold voltage metastability phenomenon of the hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). An application of gate bias stress shifts the threshold voltage of a TFT. After the bias stress is removed, the threshold voltage eventually returns to its original value. The underlying physical mechanisms for the shift in threshold voltage during the application of the bias and after the removal of the bias stress are investigated.

The creation of extra defect states in the band gap of a-Si:H close to the gate dielectric interface, and the charge trapping in the silicon nitride (SiN) gate dielectric are the most commonly considered instability mechanisms of threshold voltage. In the first part of this work, the defect state creation mechanism is reviewed and the kinetics of the charge trapping in the SiN is modelled assuming a simplified mono-energetic and a more realistic Gaussian distribution of the SiN traps. The charge trapping in the mono-energetic SiN traps was approximated by a logarithmic function of time. However, the charge trapping with a Gaussian distribution of SiN traps results in a more complex behavior.

The change in the threshold voltage of a TFT after the gate bias has been removed is referred to threshold voltage relaxation, and it is investigated in the second part of this work. A study of the threshold voltage relaxation sheds more light on the metastability mechanisms of a-Si:H TFTs. Possible mechanisms considered for the relaxation of threshold voltage are the annealing of the extra defect states and the charge de-trapping from the SiN gate dielectric. The kinetics of the charge de-trapping from a mono-energetic and a Gaussian distribution of the SiN traps are analytically modelled. It is shown that the defect state annealing mechanisms cannot explain the observed threshold voltage relaxation, but a study of the kinetics of charge de-trapping helps to bring about a very good agreement with the experimentally obtained results. Using the experimentally measured threshold voltage relaxation results, a Gaussian distribution of gap states is extracted for the SiN. This explains the threshold voltage relaxation of TFT after the bias stress with voltages as high as 50V is removed.

Finally, the results obtained from the threshold voltage relaxation make it possible to calculate the total charge trapped in the SiN and to quantitatively distinguish between the charge trapping mechanism and the defect state creation mechanisms. In conclusion, for the TFTs used in this thesis, the charge trapping in the SiN gate dielectric is shown to be the dominant threshold voltage metastability mechanism caused in short bias stress times.

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Seshadri, Sriram Mannargudi. "INVESTIGATION OF HIGH-k GATE DIELECTRICS AND METALS FOR MOSFET DEVICES." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3331.

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Progress in advanced microlithography and deposition techniques have made feasible high- k dielectric materials for MOS transistors. The continued scaling of CMOS devices is pushing the Si-SiO2 to its limit to consider high-k gate dielectrics. The demand for faster, low power, smaller, less expensive devices with good functionality and higher performance increases the demand for high-k dielectric based MOS devices. This thesis gives an in-depth study of threshold voltages of PMOS and NMOS transistors using various high-k dielectric materials like Tantalum pent oxide (Ta2O5), Hafnium oxide (HfO2), Zirconium oxide (ZrO2) and Aluminum oxide (Al2O3) gate oxides. Higher dielectric constant may lead to high oxide capacitance (Cox), which affects the threshold voltage (VT) of the device. The working potential of MOS devices can be increased by high dielectric gate oxide and work function of gate metal which may also influence the threshold voltage (VT). High dielectric materials have low gate leakage current, high breakdown voltage and are thermally stable on Silicon Substrate (Si). Different kinds of deposition techniques for different gate oxides, gate metals and stability over silicon substrates are analyzed theoretically. The impact of the properties of gate oxides such as oxide thickness, interface trap charges, doping concentration on threshold voltage were simulated, plotted and studied. This study involved comparisons of oxides-oxides, metals-metals, and metals-oxides. Gate metals and alloys with work function of less than 5eV would be suitable candidates for aluminum oxide, hafnium oxide etc. based MOSFETs.
M.S.E.E.
Department of Electrical and Computer Engineering
Engineering and Computer Science
Electrical Engineering

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Ravi, Ajaay. "Run-Time Active Leakage Control Mechanism based on a Light Threshold Voltage Hopping Technique (LITHE)." University of Cincinnati / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1302550444.

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Books on the topic "Brightness and threshold voltage"

Kursun, Volkan. Multiple supply and threshold voltage CMOS circuits. Chichester, England: John Wiley, 2006.

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Mantenieks, Maris A. Sputtering threshold energies of heavy ions. [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 1999.

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Ferguson, Dale C. The voltage threshold for arcing for solar cells in LEO-flight and ground test results. [Washington, DC]: National Aeronautics and Space Administration, 1986.

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P. R. van der Meer. Low-power deep sub-micron CMOS logic: Sub-threshold current reduction. Boston: Kluwer Academic, 2004.

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Discrete Circuit Optimization Library Based Gate Sizing And Threshold Voltage Assignment. Now Publishers, 2012.

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Wang, Alice, Anantha P. Chandrakasan, and Benton Highsmith Calhoun. Sub-threshold Design for Ultra Low-Power Systems. Springer, 2010.

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Nabaa, Georges. Minimization of threshold voltage variations and their impact in circuits and FPGAs. 2005.

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Sub-threshold Design for Ultra Low-Power Systems (Series on Integrated Circuits and Systems). Springer, 2006.

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Slimp, Jefferson C. Neurophysiology of Multiple Sclerosis. Oxford University Press, 2016. http://dx.doi.org/10.1093/med/9780199341016.003.0003.

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Any discussion of the pathomechanisms and treatments of MS benefits from an understanding of the physiology of the neuronal membrane and the action potential. Neurons and glia, are important for signal propagation, synaptic function, and neural development. The neuronal cell membrane, maintains different ionic environments inside and outside the cell, separating charge across the membrane and facilitating electrical excitability. Ion channels allow flow of sodium, potassium, and calcium ions across the membrane at selected times. At rest, potassium ion efflux across the membrane establishes the nerve membrane resting potential. When activated by a voltage change to threshold, sodium influx generates an action potential, or a sudden alteration in membrane potentials, that can be conducted along an axon. The myelin sheaths around an axon, increase the speed of conduction and conserve energy. The pathology of MS disrupts the myelin structures, disturbs conduction, and leads to neurodegeneration. Ion channels have been the target of investigation for both restoration of conduction and neuroprotection.

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Mason, Peggy. Electrical Communication Within a Neuron. Oxford University Press, 2017. http://dx.doi.org/10.1093/med/9780190237493.003.0010.

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Postsynaptic potentials integrate across time and space within a single neuron. The influence of the length constant on spatial summation and of the time constant on temporal summation is described. Whereas passive properties give rise to graded potentials, the voltage-gated sodium channel (VGSC) supports the all-or-none action potential. The action potential can be used to conduct information across long distances and is therefore used in the majority of neurons that have axons. How the inactivated state of VGSCs gives rise to the refractory period and dynamic polarization is described. The meaning of the action potential threshold is fully considered and then applied to understand the clinical condition of hyperkalemic periodic paralysis. Trains of action potentials carry information, and degradation of the spike train compromises the message. The speed of action potential conduction along both unmyelinated and myelinated axons is explored. In closing, an overview of demyelinating diseases is offered.

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Book chapters on the topic "Brightness and threshold voltage"

Arora, Narain. "Threshold Voltage." In Computational Microelectronics, 167–229. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-9247-4_5.

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Borkar, Shekhar. "Extreme Energy Efficiency by Near Threshold Voltage Operation." In Near Threshold Computing, 3–18. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-23389-5_1.

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Stamelakos, Ioannis, Sotirios Xydis, Gianluca Palermo, and Cristina Silvano. "Variability-Aware Voltage Island Management for Near-Threshold Computing with Performance Guarantees." In Near Threshold Computing, 35–53. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-23389-5_3.

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Liou, J. J., A. Ortiz-Conde, and F. Garcia-Sanchez. "Extraction of the threshold voltage of MOSFETs." In Analysis and Design of Mosfets, 163–202. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5415-8_3.

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Jouha, W., A. El Oualkadi, P. Dherbécourt, E. Joubert, and M. Masmoudi. "An Extraction Method of SiC Power MOSFET Threshold Voltage." In Recent Advances in Electrical and Information Technologies for Sustainable Development, 11–20. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-05276-8_2.

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Meinerzhagen, Pascal, Adam Teman, Robert Giterman, Noa Edri, Andreas Burg, and Alexander Fish. "Conventional GC-eDRAMs Scaled to Near-Threshold Voltage (NTV)." In Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip, 49–59. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-60402-2_4.

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Lelis, Aivars J., D. B. Habersat, G. Lopez, J. M. McGarrity, F. Barry McLean, and Neil Goldsman. "Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs." In Silicon Carbide and Related Materials 2005, 1317–20. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1317.

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Mohan, Arun, Saroj Mondal, and Surya Shankar Dan. "On-Chip Threshold Compensated Voltage Doubler for RF Energy Harvesting." In Communications in Computer and Information Science, 180–89. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9767-8_16.

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Vangal, Sriram, and Shailendra Jain. "Claremont: A Solar-Powered Near-Threshold Voltage IA-32 Processor." In Design Technologies for Green and Sustainable Computing Systems, 229–39. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-4975-1_9.

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Singh, Preeti, Vandana Kumari, Manoj Saxena, and Mridula Gupta. "Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study." In Communications in Computer and Information Science, 380–93. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-5950-7_33.

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Conference papers on the topic "Brightness and threshold voltage"

in ’t Zand, J. J. M., and E. E. Fenimore. "Threshold effects in GRB brightness distributions." In Gamma-ray bursts: 3rd Huntsville symposium. AIP, 1996. http://dx.doi.org/10.1063/1.51696.

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Hillard, R. J., R. G. Mazur, J. C. Sherbondy, L. Peitersen, M. Wilson, and R. Herlocher. "Threshold voltage." In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56802.

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Xue, J., J. Kim, A. Mestre, K. M. Tan, D. Chong, S. Roy, H. Nong, et al. "Low Voltage, High Brightness CMOS LEDs." In 2020 IEEE International Electron Devices Meeting (IEDM). IEEE, 2020. http://dx.doi.org/10.1109/iedm13553.2020.9371911.

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Kimura, Katsumi, and Masahiko Takahashi. "High-brightness cm-1-resolution threshold photoelectron spectroscopic technique." In OE/LASE '92, edited by Cheuk-Yiu Ng. SPIE, 1992. http://dx.doi.org/10.1117/12.58139.

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Savage, Craig O., and Mark E. Halpern. "Phosphene brightness modelling for voltage driven waveforms." In 2011 Seventh International Conference on Intelligent Sensors, Sensor Networks and Information Processing (ISSNIP). IEEE, 2011. http://dx.doi.org/10.1109/issnip.2011.6146575.

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Beckers, Arnout, Farzan Jazaeri, and Christian Enz. "Cryogenic MOSFET Threshold Voltage Model." In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC). IEEE, 2019. http://dx.doi.org/10.1109/essderc.2019.8901806.

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Kaul, Himanshu, Mark Anders, Steven Hsu, Amit Agarwal, Ram Krishnamurthy, and Shekhar Borkar. "Near-threshold voltage (NTV) design." In the 49th Annual Design Automation Conference. New York, New York, USA: ACM Press, 2012. http://dx.doi.org/10.1145/2228360.2228572.

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Beyatli, Ersen, Ilyes Baali, Ismail Yorulmaz, Adnan Kurt, Bernd Sumpf, Götz Erbert, Alphan Sennaroglu, Alfred Leitenstorfer, and Umit Demirbas. "Efficient and Low-Threshold Alexandrite Lasers Pumped by High-Brightness Diodes." In Advanced Solid State Lasers. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/assl.2013.atu3a.26.

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Dong, Shaohua, Rui Jin, Pengfei Wu, Lei Cui, Xiaoluan Yang, Tongtong Zi, and Jinping Zhang. "Threshold Voltage Improvement Scheme for High-voltage IGBT." In 2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE). IEEE, 2019. http://dx.doi.org/10.1109/eitce47263.2019.9094813.

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Jadiya, Sonam, Ajay Goyal, and Vismay Jain. "Independent histogram equalization using optimal threshold for contrast enhancement and brightness preservation." In 2013 4th International Conference on Computer and Communication Technology (ICCCT). IEEE, 2013. http://dx.doi.org/10.1109/iccct.2013.6749603.

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Reports on the topic "Brightness and threshold voltage"

Hu, Chenming. Dynamic Threshold-Voltage MOSFET. Fort Belvoir, VA: Defense Technical Information Center, September 1999. http://dx.doi.org/10.21236/ada368429.

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Eager, G. S. Jr, G. W. Seman, and B. Fryszczyn. Determination of threshold and maximum operating electric stresses for selected high voltage insulations: Investigation of aged polymeric dielectric cable. Final report. Office of Scientific and Technical Information (OSTI), November 1995. http://dx.doi.org/10.2172/212744.

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Kuznetsov, Victor, Vladislav Litvinenko, Egor Bykov, and Vadim Lukin. A program for determining the area of the object entering the IR sensor grid, as well as determining the dynamic characteristics. Science and Innovation Center Publishing House, April 2021. http://dx.doi.org/10.12731/bykov.0415.15042021.

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Currently, to evaluate the dynamic characteristics of objects, quite a large number of devices are used in the form of chronographs, which consist of various optical, thermal and laser sensors. Among the problems of these devices, the following can be distinguished: the lack of recording of the received data; the inaccessibility of taking into account the trajectory of the object flying in the sensor area, as well as taking into consideration the trajectory of the object during the approach to the device frame. The signal received from the infrared sensors is recorded in a separate document in txt format, in the form of a table. When you turn to the document, data is read from the current position of the input data stream in the specified list by an argument in accordance with the given condition. As a result of reading the data, it forms an array that includes N number of columns. The array is constructed in a such way that the first column includes time values, and columns 2...N- the value of voltage . The algorithm uses cycles that perform the function of deleting array rows where there is a fact of exceeding the threshold value in more than two columns, as well as rows where the threshold level was not exceeded. The modified array is converted into two new arrays, each of which includes data from different sensor frames. An array with the coordinates of the centers of the sensor operation zones was created to apply the Pythagorean theorem in three-dimensional space, which is necessary for calculating the exact distance between the zones. The time is determined by the difference in the response of the first and second sensor frames. Knowing the path and time, we are able to calculate the exact speed of the object. For visualization, the oscillograms of each sensor channel were displayed, and a chronograph model was created. The chronograph model highlights in purple the area where the threshold has been exceeded.

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