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Journal articles on the topic 'Broad area laser'

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1

Zefeng Lu, Zefeng Lu, Lijie Wang Lijie Wang, Zhide Zhao Zhide Zhao, et al. "Broad-area laser diodes with on-chip combined angled cavity." Chinese Optics Letters 15, no. 8 (2017): 081402. http://dx.doi.org/10.3788/col201715.081402.

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2

Chen, T. R., D. Mehuys, Y. H. Zhuang, et al. "Broad‐area tandem semiconductor laser." Applied Physics Letters 53, no. 16 (1988): 1468–70. http://dx.doi.org/10.1063/1.99968.

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3

Qian, Liejia, Xiang Liu, and Frank Wise. "Cr:forsterite laser pumped by broad-area laser diodes." Optics Letters 22, no. 22 (1997): 1707. http://dx.doi.org/10.1364/ol.22.001707.

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4

Fey-den Boer, A. C., H. C. W. Beijerinck, and K. A. H. van Leeuwen. "High-power broad-area diode lasers for laser cooling." Applied Physics B: Lasers and Optics 64, no. 4 (1997): 415–17. http://dx.doi.org/10.1007/s003400050192.

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5

Partanen, Henri, Jani Tervo, and Jari Turunen. "Spatial coherence of broad-area laser diodes." Applied Optics 52, no. 14 (2013): 3221. http://dx.doi.org/10.1364/ao.52.003221.

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6

Vasil’ev, Peter P., and Ian H. White. "Phase-conjugation broad area twin-contact semiconductor laser." Applied Physics Letters 71, no. 1 (1997): 40–42. http://dx.doi.org/10.1063/1.119462.

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7

Lang, R. J., D. Mehuys, D. F. Welch, and L. Goldberg. "Spontaneous filamentation in broad-area diode laser amplifiers." IEEE Journal of Quantum Electronics 30, no. 3 (1994): 685–94. http://dx.doi.org/10.1109/3.286155.

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8

Yarunova, E. A., A. A. Krents, N. E. Molevich, and D. A. Anchikov. "Stabilization of Broad-Area Laser Emission by Optical Injection." Bulletin of the Lebedev Physics Institute 46, no. 4 (2019): 130–32. http://dx.doi.org/10.3103/s1068335619040067.

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9

HAYAKAWA, Toshiro. "Technology Progress in Broad-Area High-Power Laser Diodes." Review of Laser Engineering 28, no. 4 (2000): 203–8. http://dx.doi.org/10.2184/lsj.28.203.

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10

Zhao Yihao, 赵懿昊, 王俊 Wang Jun, 王翠鸾 Wang Cuiluan, 刘素平 Liu Suping, and 马骁宇 Ma Xiaoyu. "Study of High-Power Broad Area Distributed-Feedback Laser." Chinese Journal of Lasers 38, no. 8 (2011): 0802005. http://dx.doi.org/10.3788/cjl201138.0802005.

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11

Zheng, Yujin, Xin Gao, Hirofumi Miyajima, and Hirofumi Kan. "Divergence-narrowed external-cavity broad-area laser-diode array." Journal of Applied Physics 95, no. 11 (2004): 6489–91. http://dx.doi.org/10.1063/1.1715131.

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12

Vinokurov, D. A., V. A. Kapitonov, D. N. Nikolaev, et al. "MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes." Semiconductors 35, no. 11 (2001): 1324–28. http://dx.doi.org/10.1134/1.1418080.

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13

He, Y., H. An, J. Cai, C. Galstad, S. Macomber, and M. Kanskar. "808 nm broad area DFB laser for solid-state laser pumping application." Electronics Letters 45, no. 3 (2009): 163. http://dx.doi.org/10.1049/el:20093479.

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14

Li Yuandong, 李元栋, 王红岩 Wang Hongyan, 杨子宁 Yang Zining, and 华卫红 Hua Weihong. "Signal Broad Area High Power Laser Diode with Narrowed Linewidth." Laser & Optoelectronics Progress 48, no. 2 (2011): 021401. http://dx.doi.org/10.3788/lop48.021401.

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15

Gao Zhihong, 高志红, 张文喜 Zhang Wenxi, 孔新新 Kong Xinxin, and 冯其波 Feng Qibo. "Optical design of broad-area laser diode beam-shaping system." Infrared and Laser Engineering 47, no. 12 (2018): 1218006. http://dx.doi.org/10.3788/irla201847.1218006.

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16

Fey-den Boer, A. C., K. A. H. van Leeuwen, H. C. W. Beijerinck, C. Fort, and F. S. Pavone. "Grating feedback in a 810 nm broad-area diode laser." Applied Physics B 63, no. 2 (1996): 117–20. http://dx.doi.org/10.1007/bf01095259.

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17

Takagi, T., H. Imamoto, F. Sato, K. Imanaka, and M. Shimura. "Broad area phase-locked superlattice barrier quantum well laser diode." IEEE Photonics Technology Letters 1, no. 4 (1989): 73–74. http://dx.doi.org/10.1109/68.87906.

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18

Lang, Robert J., David Mehuys, Amos Hardy, Ken M. Dzurko, and David F. Welch. "Spatial evolution of filaments in broad area diode laser amplifiers." Applied Physics Letters 62, no. 11 (1993): 1209–11. http://dx.doi.org/10.1063/1.108736.

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19

Cherng, Chung‐Pin, and Marek Osiński. "Coupled broad‐area mode theory of gain‐guided laser arrays." Journal of Applied Physics 70, no. 8 (1991): 4617–19. http://dx.doi.org/10.1063/1.349098.

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20

Perez-Serrano, A., J. Javaloyes, and S. Balle. "Spectral Delay Algebraic Equation Approach to Broad Area Laser Diodes." IEEE Journal of Selected Topics in Quantum Electronics 19, no. 5 (2013): 1–8. http://dx.doi.org/10.1109/jstqe.2013.2246772.

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21

Surette, M. R., L. Goldberg, and D. Mehuys. "High-power ring laser using a broad-area GaAlAs amplifier." IEEE Photonics Technology Letters 5, no. 8 (1993): 919–22. http://dx.doi.org/10.1109/68.238254.

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22

Cox, B. P., and W. R. Smith. "Predictions of thermoelastic stress in a broad-area semiconductor laser." Applied Physics Letters 90, no. 12 (2007): 121105. http://dx.doi.org/10.1063/1.2714330.

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23

Gehrig, Edeltraud, and Ortwin Hess. "Ultrafast active phase conjugation in broad-area semiconductor laser amplifiers." Journal of the Optical Society of America B 18, no. 7 (2001): 1036. http://dx.doi.org/10.1364/josab.18.001036.

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24

Sell, J. F., W. Miller, D. Wright, B. V. Zhdanov, and R. J. Knize. "Frequency narrowing of a 25 W broad area diode laser." Applied Physics Letters 94, no. 5 (2009): 051115. http://dx.doi.org/10.1063/1.3079418.

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25

Zheng Dai, R. Michalzik, P. Unger, and K. J. Ebeling. "Numerical simulation of broad-area high-power semiconductor laser amplifiers." IEEE Journal of Quantum Electronics 33, no. 12 (1997): 2240–54. http://dx.doi.org/10.1109/3.644107.

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26

Kolesnikov, M., J. Castillega, N. Bhandarkar, and N. Stelmakh. "Spatially singlemode broad-area semiconductor laser with planar external cavity." Electronics Letters 40, no. 13 (2004): 807. http://dx.doi.org/10.1049/el:20045010.

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27

Kanskar, M., Y. He, J. Cai, et al. "53% wallplug efficiency 975 nm distributed feedback broad area laser." Electronics Letters 42, no. 25 (2006): 1455. http://dx.doi.org/10.1049/el:20062868.

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28

Zhouping Su, Zhouping Su, Zhicheng Ji Zhicheng Ji, Lizhi Que Lizhi Que, and Zhuowei Zhu Zhuowei Zhu. "Coherent beam combination of broad-area laser diode array using of f-axis external cavity with double feedback." Chinese Optics Letters 10, no. 10 (2012): 101402–4. http://dx.doi.org/10.3788/col201210.101402.

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29

Isemann, Andreas, and Carsten Fallnich. "High-power Colquiriite lasers with high slope efficiencies pumped by broad-area laser diodes." Optics Express 11, no. 3 (2003): 259. http://dx.doi.org/10.1364/oe.11.000259.

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30

Konyukhov, Andrey Ivanovich. "Modelling the Dynamics of Photonic Crystal Broad-Area Surface Emitting Laser." Izvestiya of Saratov University. New series. Series: Physics 5, no. 1 (2005): 102–7. http://dx.doi.org/10.18500/1817-3020-2005-5-1-102-107.

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31

Moreno-Sereno, Mauricio, Noemi Pérez, Guillem Domenech-Gil, et al. "Laser Interferometry for Broad Area SPR-Grating Couplers in Chemical Applications." Proceedings 1, no. 4 (2017): 323. http://dx.doi.org/10.3390/proceedings1040323.

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32

Zining Yang, 杨子宁, 李元栋 Yuandong Li, 王红岩 Hongyan Wang, 陆启生 Qisheng Lu, and 许晓军 Xiaojun Xu. "Frequency-narrowed external-cavity broad-area-diode for rubidium laser pumping." Chinese Optics Letters 9, no. 6 (2011): 061401–61403. http://dx.doi.org/10.3788/col201109.061401.

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33

Liu, Chong, Jianhong Ge, and Jun Chen. "Study on a broad-area laser diode with external cavity feedback." Optics & Laser Technology 39, no. 1 (2007): 169–73. http://dx.doi.org/10.1016/j.optlastec.2005.04.001.

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34

García-Ojalvo, J., R. Vilaseca, and M. C. Torrent. "Coupled pattern formation near threshold in a broad-area cascade laser." Physical Review A 56, no. 6 (1997): 5111–20. http://dx.doi.org/10.1103/physreva.56.5111.

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35

Rinner, F., J. Rogg, P. Friedmann, M. Mikulla, G. Weimann, and R. Poprawe. "Longitudinal carrier density measurement of high power broad area laser diodes." Applied Physics Letters 80, no. 1 (2002): 19–21. http://dx.doi.org/10.1063/1.1430264.

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36

Vijayakumar, Deepak, Ole B. Jensen, and Birgitte Thestrup. "980 nm high brightness external cavity broad area diode laser bar." Optics Express 17, no. 7 (2009): 5684. http://dx.doi.org/10.1364/oe.17.005684.

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37

Sin, Yongkun, Stephen LaLumondiere, William Lotshaw, and Steven C. Moss. "Carrier Dynamics in Self-Assembled InAs QD Laser Structures and Broad-Area InAs QD Lasers Grown by Molecular Beam Epitaxy." MRS Proceedings 1635 (2014): 43–48. http://dx.doi.org/10.1557/opl.2014.103.

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ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.
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38

Tomm, Jens W., Martin Hempel, and Thomas Elsaesser. "Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers." Materials Science Forum 725 (July 2012): 105–8. http://dx.doi.org/10.4028/www.scientific.net/msf.725.105.

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The initial phase of defect propagation in broad area diode lasers, which are affected by the catastrophic optical damage (COD) effect, is studied. The decay of laser power within the first several 100 ns is found to be determined by defect propagation. When analyzing different device designs, a correlation is found between defect propagation velocities and thermal resistances of the materials vicinal to the quantum well, being the main heat source. The findings are confirmed by direct inspection of the defect pattern in opened devices.
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39

Pawletko, Thomas, Marie Houssin, Martina Knoop, Michel Vedel, and Fernande Vedel. "High power broad-area diode laser at 794 nm injected by an external cavity laser." Optics Communications 174, no. 1-4 (2000): 223–29. http://dx.doi.org/10.1016/s0030-4018(99)00697-5.

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40

Meng, L. S., P. A. Roos, and J. L. Carlsten. "High-Efficiency Continuous-Wave Raman Laser Pumped by an Injection-Locked Broad-Area Diode Laser." IEEE Journal of Quantum Electronics 40, no. 4 (2004): 390–93. http://dx.doi.org/10.1109/jqe.2004.825211.

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41

Zhang, Yi Shao, Ge Yan Fu, Fei Cao, and Ji Li. "Study on Technology of Multi-Trace Overlapping and Rapid Prototype by Broad-Beam Laser Cladding." Advanced Materials Research 750-752 (August 2013): 2131–34. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.2131.

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Obvious physical process differences exist between overlapping area and non-overlapping area by broad-beam laser cladding,also the parallel and vertical interface of RP.By comparing the microstructure and performance, the result shows: the microstructure of overlapping area has broken crystal,the size of overlapping area crystal is bigger than the non-overlapping one.Repeated heating makes overlapping area secondary dissolving out and having higher rigidity;Between layer and layer of broad-beam laser cladding RP is metallurgical combination completely,the degree of uniformity of central microstructures performance is good,hardness of the bow shape area between overlapping layer and matrix is greatly increased.
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42

Rahman, Faiz, and Marc Sorel. "Laser pumped light emitting diodes as broad area sources of coherent radiation." Journal of Modern Optics 53, no. 8 (2006): 1101–8. http://dx.doi.org/10.1080/09500340500487059.

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43

Nishida, Takehiro, Kyosuke Kuramoto, Yuji Iwai, Takuma Fujita, and Tetsuya Yagi. "Multiemitter 638-nm high-power broad area laser diodes for display application." Optical Engineering 58, no. 08 (2019): 1. http://dx.doi.org/10.1117/1.oe.58.8.086113.

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44

Gross, Simon, David W. Coutts, Mark Dubinskiy, and Michael J. Withford. "Beam shaping of a broad-area laser diode using 3D integrated optics." Optics Letters 44, no. 4 (2019): 831. http://dx.doi.org/10.1364/ol.44.000831.

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45

McGinily, Stephen J., Richard H. Abram, Erling Riis, and Allister I. Ferguson. "Efficient coupling of several broad area laser diodes into an optical fiber." Review of Scientific Instruments 77, no. 11 (2006): 116101. http://dx.doi.org/10.1063/1.2364150.

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46

Morita, T., T. Nagakura, K. Torii, et al. "High-Efficient and Reliable Broad-Area Laser Diodes With a Window Structure." IEEE Journal of Selected Topics in Quantum Electronics 19, no. 4 (2013): 1502104. http://dx.doi.org/10.1109/jstqe.2013.2245103.

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47

Gehrig, Edeltraud, and Ortwin Hess. "Microscopic theory of spatiotemporal multiwave mixing in broad-area semiconductor laser amplifiers." Physical Review A 60, no. 6 (1999): 5035–45. http://dx.doi.org/10.1103/physreva.60.5035.

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48

Vaissié, Laurent, Waleed Mohammed, and Eric G. Johnson. "Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes." Optics Letters 28, no. 8 (2003): 651. http://dx.doi.org/10.1364/ol.28.000651.

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49

Bulaev, P. V., V. A. Kapitonov, A. V. Lutetskii, et al. "MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact." Semiconductors 36, no. 9 (2002): 1065–69. http://dx.doi.org/10.1134/1.1507292.

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50

Itaya, K., G. Hatakoshi, Y. Watanabe, M. Ishikawa, and Y. Uematsu. "High-power CW operation of broad area InGaAlP visible light laser diodes." Electronics Letters 26, no. 3 (1990): 214. http://dx.doi.org/10.1049/el:19900144.

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