Academic literature on the topic 'Budget, signe'
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Journal articles on the topic "Budget, signe"
Macilwain, Colin. "Promising signs for NSF budget increase." Nature 388, no. 6637 (July 1997): 3. http://dx.doi.org/10.1038/40214.
Full textDavis, Shawn K., and Jessica L. Thompson. "Investigating the Impact of Interpretive Signs at Neighborhood Natural Areas." Journal of Interpretation Research 16, no. 2 (November 2011): 55–66. http://dx.doi.org/10.1177/109258721101600205.
Full textJOHNSON, JEFF. "DOE budget signed with science, security cuts." Chemical & Engineering News 77, no. 41 (October 11, 1999): 20. http://dx.doi.org/10.1021/cen-v077n041.p020.
Full textRovner, Julie. "US budget deal shows signs of strain." Lancet 349, no. 9063 (May 1997): 1458. http://dx.doi.org/10.1016/s0140-6736(05)63745-2.
Full textMeganita, Linda, Halim Dedy Perdana, Santoso Tri Hananto, and Hanung Triatmoko. "FAKTOR-FAKTOR YANG MEMPENGARUHI PENGHENTIAN PREMATUR ATAS PROSEDUR AUDIT." EkBis: Jurnal Ekonomi dan Bisnis 1, no. 2 (November 7, 2018): 123. http://dx.doi.org/10.14421/ekbis.2017.1.2.1012.
Full textRotella, Elyce, and George Alter. "Working Class Debt in the Late Nineteenth Century United States." Journal of Family History 18, no. 2 (March 1993): 111–34. http://dx.doi.org/10.1177/036319909301800204.
Full textGROPP, ROBERT E. "Are There Signs of Life in the Innovation Budget?" BioScience 56, no. 5 (2006): 382. http://dx.doi.org/10.1641/0006-3568(2006)056[0382:atsoli]2.0.co;2.
Full textCriado-Aldeanueva, Francisco, F. Javier Soto-Navarro, and Jesús García-Lafuente. "Large-Scale Atmospheric Forcing Influencing the Long-Term Variability of Mediterranean Heat and Freshwater Budgets: Climatic Indices." Journal of Hydrometeorology 15, no. 2 (April 1, 2014): 650–63. http://dx.doi.org/10.1175/jhm-d-13-04.1.
Full textBosilovich, Michael G., Franklin R. Robertson, and Junye Chen. "Global Energy and Water Budgets in MERRA." Journal of Climate 24, no. 22 (November 15, 2011): 5721–39. http://dx.doi.org/10.1175/2011jcli4175.1.
Full textAnnamalai, H. "ENSO Precipitation Anomalies along the Equatorial Pacific: Moist Static Energy Framework Diagnostics." Journal of Climate 33, no. 21 (November 1, 2020): 9103–27. http://dx.doi.org/10.1175/jcli-d-19-0374.1.
Full textDissertations / Theses on the topic "Budget, signe"
Labouret, Victor. "Du rôle de la signification du contrôle de gestion dans la performance de l'entreprise : le cas de la signification du budget, trois hypothèses : le budget rationnel, le budget processus, le budget politique." Jouy-en Josas, HEC, 2002. http://www.theses.fr/2002EHEC0085.
Full textSchiz, Frank Jochen Wilhelm. "The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors." Thesis, University of Southampton, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.287345.
Full textVu, Van Tuan. "Recherche et évaluation d'une nouvelle architecture de transistor bipolaire à hétérojonction Si/SiGe pour la prochaine génération de technologie BiCMOS." Thesis, Bordeaux, 2016. http://www.theses.fr/2016BORD0304/document.
Full textThe ultimate objective of this thesis is to propose and evaluate a novel SiGe HBT architec-ture overcoming the limitation of the conventional Double-Polysilicon Self-Aligned (DPSA) archi-tecture using Selective Epitaxial Growth (SEG). This architecture is designed to be compatible with the 28-nm Fully Depleted (FD) Silicon On Insulator (SOI) CMOS with a purpose to reach the objec-tive of 400 GHz fT and 600 GHz fMAX performance in this node. In order to achieve this ambitious objective, several studies, including the exploration and comparison of different SiGe HBT architec-tures, 55-nm Si/SiGe BiCMOS TCAD calibration, Si/SiGe BiCMOS thermal budget study, investi-gating a novel architecture and its optimization, have been carried out. Both, the fabrication process and physical device models (incl. band gap narrowing, saturation velocity, high-field mobility, SRH recombination, impact ionization, distributed emitter resistance, self-heating and trap-assisted tunnel-ing, as well as band-to-band tunneling), have been calibrated in the 55-nm Si/SiGe BiCMOS tech-nology. Furthermore, investigations done on process thermal budget reduction show that a 370 GHz fT SiGe HBT can be achieved in 55nm assuming the modification of few process steps and the tuning of the bipolar vertical profile. Finally, the Fully Self-Aligned (FSA) SiGe HBT architecture using Selective Epitaxial Growth (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from the Collector (EXBIC) is chosen as the most promising candidate for the 28-nm FD-SOI BiCMOS genera-tion. The optimization of this architecture results in interesting electrical performances such as 470 GHz fT and 870 GHz fMAX in this technology node
Gauthier, Alexis. "Etude et développement d’une nouvelle architecture de transistor bipolaire à hétérojonction Si / SiGe compatible avec la technologie CMOS FD-SOI." Thesis, Lille 1, 2019. http://www.theses.fr/2019LIL1I081.
Full textThe studies presented in this thesis deal with the development and the optimization of bipolar transistors for next BiCMOS technologies generations. The BiCMOS055 technology is used as the reference with 320 GHz fT and 370 GHz fMAX performances. Firstly, it is showed that the vertical profile optimization, including thermal budget, base and collector profiles allows to reach 400 GHz fT HBT while keeping CMOS compatibility. In a second time, a fully implanted collector is presented. Phosphorous-carbon co-implantation leads to defect-free substrate, precise dopants profile control and promising electrical performances. A new 450 GHz fT record is set thanks to optimized design rules. A low-depth STI module (SSTI) is developed to limit the base / collector capacitance increase linked to this type of technology. In a third time, the silicon integration of a new bipolar transistor architecture is detailed with the aim of overcoming DPSA-SEG architecture limitations used in BiCMOS055 and first electrical results are discussed. This part shows the challenges of the integration of new-generation bipolar transistors in a CMOS platform. The functionality of the emitter / base architecture is demonstrated through dc measurements. Eventually, the feasibility of 28-nm integration is evaluated with specific experiments, especially about implantations through the SOI, and an overview of potential 3D-integrations is presented
Huang, Yu-Shu, and 黃郁書. "Visible and Far Infrared Laser Annealing-enabled Low Thermal Budget SiGe Nano-scaled Transistor." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/67006893370454453698.
Full text國立交通大學
光電工程研究所
103
In this thesis, the amorphous SiGe thin film is deposited by ICPCVD at low temperature of 450oC, the SiGe thin film is then crystallized by visible laser crystallization (λ=532 nm). The grain size of as-crystallized poly-SiGe thin films range from 500 nm to 600 nm. It is found that germanium segregation is observed after laser crystallization. It causes germanium-rich region on surface of the thin film. Thus, Chemical Mechanical Polishing (CMP) is used to polish high germanium concentration region and smoothen the surface to obtain thin and flat ploy SiGe film with uniform germanium concentration distribution. Moreover, far infrared ray laser annealing (FIR-LA) can decrease sheet resistance. Laser energy is absorbed in implantation induced defect region and transfer to phonon vibration, which is equal to thermal activation effectively. . In this study, the sheet resistance of polycrystalline SiGe film can be decreased to 290 Ohm/sq. (P-type) and 350 Ohm/sq. (N-type) by far infrared ray laser annealing with less dopants diffusion due to the short time dwell time. Therefore, FIR-LA is also suitable for realizing nano-scaled devices. The combination of visible laser crystallized SiGe film and far-infrared ray laser activation demonstrated the high performance of poly SiGe metal-oxide-silicon field effect transistor (MOSFET), which exhibited high on current of 51.3 uA/um, low subthreshold swing (S.S.) of 181 mV/dec. and threshold voltage (Vth) of -1.05 V in P-type FET. The N-type device exhibited Ion of 20.1 uA/um, S.S. of 240 mV/dec, and Vth of 0.95 V. The process and related performance is of great potential for nano-scaled TFTs and monolithic 3DICs applications.
Books on the topic "Budget, signe"
United States. Congress. House. Committee on Commerce. Traffic signal synchronization projects: Report (to accompany H.R. 2988) (including cost estimate of the Congressional Budget Office). [Washington, D.C.?: U.S. G.P.O., 1996.
Find full textUnited States. Congress. House. Committee on Commerce. Traffic signal synchronization projects: Report (to accompany H.R. 2988) (including cost estimate of the Congressional Budget Office). [Washington, D.C.?: U.S. G.P.O., 1996.
Find full textUnited States. Congress. House. Committee on Commerce. Traffic signal synchronization projects: Report (to accompany H.R. 2988) (including cost estimate of the Congressional Budget Office). [Washington, D.C.?: U.S. G.P.O., 1996.
Find full textUnited States. Congress. House. Committee on Commerce. Traffic signal synchronization projects: Report (to accompany H.R. 2988) (including cost estimate of the Congressional Budget Office). [Washington, D.C.?: U.S. G.P.O., 1996.
Find full textSob o signo da vontade popular: O orçamento participativo e o dilema da Câmara Municipal de Porto Alegre. Belo Horizonte: Editora UFMG, 2002.
Find full textRequesting the president to transmit to the House of Representatives not later than 14 days after the date of adoption of this resolution documents in the possession of the president relating to the receipt and consideration by the Executive Office of the President of any information concerning the variation between the version of S. 1932, the Deficit Reduction Act of 2005, that the House of Representatives passed on February 1, 2006, and the version of the bill that the president signed on February 8, 2006: Adverse report together with additional views (to accompany H. Res. 752). [Washington, D.C: U.S. G.P.O., 2006.
Find full textHouse, Commerce Clearing, ed. Explanation of the Revenue Reconciliation Act of 1989: P.L. 101-239, as signed by the President on December 19, 1989. Chicago, Ill. (4025 W. Peterson Ave., Chicago 60646): Commerce Clearing House, 1989.
Find full textHouse, Commerce Clearing, ed. Revenue Reconciliation Act of 1990: Law and explanation : P.L. 101-508, as signed by the President on November 5, 1990. Chicago, Ill. (4025 W. Peterson Ave., Chicago 60646): Commerce Clearing House, 1990.
Find full textHouse, Commerce Clearing, ed. Explanation of the Revenue Reconciliation Act of 1990: P.L. 101-508, as signed by the President on November 5, 1990. Chicago, Ill. (4025 W. Peterson Ave., Chicago 60646): Comerce Clearing House, 1990.
Find full textDrelichman, Mauricio, and Hans-Joachim Voth. Tax, Empire, and the Logic of Spanish Decline. Princeton University Press, 2017. http://dx.doi.org/10.23943/princeton/9780691151496.003.0009.
Full textBook chapters on the topic "Budget, signe"
Kerrigan, Heather. "Treasury Secretary Addresses Budget Deficit; President Signs FY 2020 Spending Bills : October 25 and December 20, 2019." In Historic Documents of 2019, 597–607. 2455 Teller Road, Thousand Oaks California 91320: CQ Press, 2020. http://dx.doi.org/10.4135/9781544384641.n49.
Full textIslam, Muhammad Nazrul, and Franck Tétard. "Integrating Semiotics Perception in Usability Testing to Improve Usability Evaluation." In Cases on Usability Engineering, 145–69. IGI Global, 2013. http://dx.doi.org/10.4018/978-1-4666-4046-7.ch007.
Full textGreen-Simms, Lindsey B. "The Return of the Mercedes: Upward Mobility, the Good Life, and Nigerian Video Film." In Postcolonial Automobility. University of Minnesota Press, 2017. http://dx.doi.org/10.5749/minnesota/9781517901141.003.0005.
Full textCaymax, Matty R., and W. Y. Leong. "Low Thermal Budget Chemical Vapour Deposition Techniques for Si and SiGe." In Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices, 141–83. CRC Press, 2021. http://dx.doi.org/10.1201/9781003208860-5.
Full textGustafsson, Tommy. "Slasher in the Snow: The Rise of the Low-Budget Nordic Horror Film." In Nordic Genre Film, 189–202. Edinburgh University Press, 2015. http://dx.doi.org/10.3366/edinburgh/9780748693184.003.0014.
Full textFletcher, Patricia Diamond. "The Realities of the Paperwork Reduction Act of 1995." In Public Information Technology, 74–93. IGI Global, 2003. http://dx.doi.org/10.4018/978-1-59140-060-8.ch004.
Full textGrygiel, Jakub J., and A. Wess Mitchell. "Introduction: American Power at the Global Frontier." In The Unquiet Frontier. Princeton University Press, 2017. http://dx.doi.org/10.23943/princeton/9780691178264.003.0001.
Full textKirshner, Jonathan. "“Jason’s no Businessman … I Think He’s an Artist”." In When the Movies Mattered, 51–68. Cornell University Press, 2019. http://dx.doi.org/10.7591/cornell/9781501736094.003.0004.
Full textVieira de Andrade, José Carlos, João Carlos Loureiro, and Suzana Tavares da Silva. "Legal Changes and Constitutional Adjudication in Portuguese Social Law in Consequence of the European Financial Crisis." In European Welfare State Constitutions after the Financial Crisis, 208–39. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198851776.003.0008.
Full textDas, Ramesh Chandra, and Sovik Mukherjee. "Determinants of Terrorism in South Asia." In Cyber Warfare and Terrorism, 1598–617. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-2466-4.ch094.
Full textConference papers on the topic "Budget, signe"
Burghartz, Grutzmacher, Sedgwick, Jenkins, Megdanis, Cotte, Nguyen-Ngoc, and Iyer. "An Ultra-low Thermal-budget SiGe-base Bipolar Technology." In Symposium on VLSI Technology. IEEE, 1993. http://dx.doi.org/10.1109/vlsit.1993.760244.
Full textGauthier, A., P. Chevalier, G. Avenier, G. Ribes, M. L. Rellier, Y. Campidelli, R. Beneyton, D. Celi, G. Haury, and C. Gaquiere. "SiGe HBT / CMOS process thermal budget co-optimization in a 55-nm CMOS node." In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM). IEEE, 2017. http://dx.doi.org/10.1109/bctm.2017.8112911.
Full textVu, V. T., T. Rosenbaum, O. Saxod, D. Celi, T. Zimmer, S. Fregonese, and P. Chevalier. "Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance." In 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM. IEEE, 2015. http://dx.doi.org/10.1109/bctm.2015.7340558.
Full textRosseel, Erik, Andriy Hikavyy, Jean-Luc Everaert, Liesbeth Witters, Jerome Mitard, Thomas Hoffmann, Wilfried Vandervorst, A. Pap, and T. Pavelka. "Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content." In 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP). IEEE, 2010. http://dx.doi.org/10.1109/rtp.2010.5623604.
Full textHellings, Geert, Liesbeth Witters, Raymond Krom, Jerome Mitard, Andriy Hikavyy, Roger Loo, Andreas Schulze, et al. "Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel." In 2010 IEEE International Electron Devices Meeting (IEDM). IEEE, 2010. http://dx.doi.org/10.1109/iedm.2010.5703335.
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