Relevant bibliographies by topics / Buffer layers

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Buffer layers'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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Journal articles on the topic "Buffer layers"

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Aytug, T., B. W. Kang, C. Cantoni, E. D. Specht, M. Paranthaman, A. Goyal, D. K. Christen, et al. "Growth and characterization of conductive SrRuO3 and LaNiO3 multilayers on textured Ni tapes for high-Jc Yba2Cu3O7–delta; coated conductors." Journal of Materials Research 16, no. 9 (September 2001): 2661–69. http://dx.doi.org/10.1557/jmr.2001.0365.

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Power applications of high-temperature superconducting (HTS) coated conductors will require stabilization against thermal runaway. We have developed conductive buffer layers to electrically couple the HTS layer to the underlying metal substrate. The structure comprises the layer sequence of SrRuO3 (SRO) on LaNiO3 (LNO) on biaxially textured Ni substrates. We report baseline investigations of compatibility of SRO/LNO multilayer structure with processing of Yba2Cu3O7−δ (YBCO) and demonstrate biaxially textured YBCO films on conductively buffered Ni tapes. These YBCO coatings exhibit self-field Jc values as high as 1.3 × 106 A/cm2 at 77 K, and the entire structure (HTS + conductive buffers + metal substrate) shows good electrical connectivity. These results demonstrate that SRO/LNO buffer layers may provide a basis for stabilized coated conductors.
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Núñez-Cascajero, Arántzazu, Fernando B. Naranjo, María de la Mata, and Sergio I. Molina. "Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications." Materials 14, no. 9 (April 27, 2021): 2236. http://dx.doi.org/10.3390/ma14092236.

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Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.
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Kharchenko, V. A. "HETEROSTRUCTURE BUFFER LAYERS." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 19, no. 3 (March 5, 2018): 189–94. http://dx.doi.org/10.17073/1609-3577-2016-3-189-194.

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Dunstan, D. J. "Relaxed buffer layers." Semiconductor Science and Technology 6, no. 9A (September 1, 1991): A76—A79. http://dx.doi.org/10.1088/0268-1242/6/9a/013.

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Piquette, E. C., P. M. Bridger, R. A. Beach, and T. C. McGill. "Effect of Buffer Layer and III/V Ratio on the Surface Morphology of Gan Grown by MBE." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 417–22. http://dx.doi.org/10.1557/s1092578300002829.

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The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma source. Growth using GaN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to form. Ga-polar films can be grown on AlN buffer layers, with the surface morphology determined by the conditions of buffer layer deposition as well as the III/V ratio for growth of the GaN layer. Near-stoichiometric buffer layer growth conditions appear to support the flattest surfaces in this case. Three defect types are typically observed in GaN films on AlN buffers, including large and small pits and “loop” defects. It is possible to produce surfaces free from large pit defects by growing thicker films under more Ga-rich conditions. In such cases the surface roughness can be reduced to less than 1 nm RMS.
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Kujofsa, Tedi, and John E. Ayers. "Threading Dislocations in S-Graded ZnSxSe1-x/GaAs (001) Metamorphic Buffer Layers." International Journal of High Speed Electronics and Systems 23, no. 01n02 (March 2014): 1420005. http://dx.doi.org/10.1142/s0129156414200055.

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Metamorphic semiconductor devices are commonly fabricated with linearly-graded buffer layers, but equilibrium modeling studies suggest that S-graded buffers, following a normal cumulative distribution function, may enable lower threading defect densities. The present work involves a study of threading dislocation density behavior in S-graded ZnS x Se 1-x buffer layers for metamorphic devices on mismatched GaAs (001) substrates using a kinetic model for lattice relaxation and misfit-threading dislocation interactions. The results indicate that optimization of an S-graded buffer layer to minimize the surface threading dislocation density requires adjustment of the standard deviation parameter and cannot be achieved by varying the buffer thickness alone. Furthermore, it is possible to tailor the design of the S-graded buffer layer in such a way that the density of mobile threading dislocations at the surface vanishes. Nonetheless, the threading dislocation behavior in these heterostructures is quite complex, and a full understanding of their behavior will require further experimental and modeling studies.
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Li, Guo, Minghua Pu, Huaming Zhou, Xiaohua Du, Yanbing Zhang, and Yong Zhao. "Possible new single-buffer layers for YBa2Cu3O7−y coated conductors prepared by chemical solution deposition." Journal of Materials Research 22, no. 9 (September 2007): 2398–403. http://dx.doi.org/10.1557/jmr.2007.0320.

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New single-buffer layers of YBiO3 and SmBiO3 have been proposed for YBa2Cu3O7−y (YBCO) and SmBa2Cu3O7−y coated conductors. Highly c-axis oriented YBiO3 and SmBiO3 buffer layers have been deposited on single-crystal LaAlO3 and SrTiO3, respectively, by a low-cost chemical solution deposition method in a temperature range as low as 730 to 800 °C in air. Precursor solution of yttrium nitrate, samarium nitrate, and bismuth nitrate has been deposited using spin coating and heat treated in air in a single stage to yield textured YBiO3 and SmBiO3 buffers. A very dense, smooth, pinhole-free, and crack-free morphology has been observed for both buffers. Dense, homogeneous, and epitaxially grown YBCO film with thickness about 300 nm has been obtained on YBiO3 buffer with onset critical temperature 90 K and Jc (77 K, self-field) over 3 MA/cm2. These results offer an effective alternative to prepare desirable buffer layer(s) for YBCO-coated conductors.
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Wu, Xiao Chen, Xiao Xia Zhong, Wei Zhou, Lu Qi Yuan, Qi Wei Shu, and Yu Xing Xia. "Hydroxyapatite Films Deposited on TiN and TiO2 Buffer Layers by Radio-Frequency Magnetron Sputtering: Comparative Study." Key Engineering Materials 334-335 (March 2007): 1133–36. http://dx.doi.org/10.4028/www.scientific.net/kem.334-335.1133.

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A comparative study was presented to demonstrate the clear influence of the different buffer layer (TiN and TiO2) on the HA film. In this study, magnetron sputtering was applied for different film deposition. Nano-indentation was used to examine the mechanical properties of the HA film on both TiN and TiO2 buffer layers. It is found that HA film on TiN buffer layer is harder and the HA film on TiO2 buffers is more rigid. Further more, the simulated body fluid (SBF) soaking test was selected to investigate the properties of the HA/TiN and HA/TiO2 films in the physiological media. The obvious delamination was observed on the surface of HA film on TiN buffer layer, while the surface morphology of HA film on TiO2 buffer layer remained nearly unchanged. The result indicated that TiO2 buffer layer shows a better interfacial bonding to the HA film.
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Wang, Xiao Jing. "Effects of Al2O3 Buffer Layer on the Properties of ZnO: Al Thin Films Deposited on Glass by Sputtering." Materials Science Forum 848 (March 2016): 301–4. http://dx.doi.org/10.4028/www.scientific.net/msf.848.301.

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The ZnO:Al (AZO) films were deposited on glass substrates with Al2O3 buffer layers by RF magnetron sputtering. The obtained films had the hexagonal structure and preferred orientation of (002). Compared with AZO film without buffer layer, the grain size of the film with buffer layer was increased and the conductive property was increased greatly. the grain size of AZO films reached 27.9nm for those with buffer layers. The optical property of AZO films was decreased by the buffer layers. The resistivity of AZO films with Al2O3 buffer layer was about 6.6×10-3 Ω·cm and the average transmittance was over 80% in the range of 450~900nm.
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Oh, Yong Jun, Jung Seok Ra, and Ui Gil Lee. "Effects of Deposition Parameters on the Crystallinities of CeO2 and Y2O3 Buffer Layers on Textured Ni Deposited by Magnetron Sputtering." Solid State Phenomena 124-126 (June 2007): 779–82. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.779.

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The epitaxial growth conditions of CeO2 and Y2O3 single buffer layers on textured Ni tapes were examined using rf magnetron sputtering, and the process conditions for the sequential and mixture buffer layers of these two materials were investigated respectively in order to develop a more simplified buffer architecture. The CeO2 single layer exhibited a well developed (200) epitaxial growth at Ar/10%O2 gas below 450°C, although the epitaxial property was decreased with increasing layer thickness. With regard to the deposition of Y2O3 on Ni, the epitaxial growth was not successful. The epitaxy of Y2O3 on Ni was very sensitive to the O2 gas pressure during sputtering. The repeated sequential architecture of the CeO2 and Y2O3 layers exhibited a good epitaxial property at 400°C/(Ar/10%O2) for the initial CeO2 layer and 700°C/Ar and 700°C/(Ar/10%O2) for the subsequent Y2O3 and CeO2 layers, respectively. The Y-doped CeO2 buffers with (200) epitaxy were successfully obtained by the co-sputtering of Ce and Y metals in a reactive gas condition, and the maximum target Y/Ce ratio for the epitaxy was about 1/10.
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Dissertations / Theses on the topic "Buffer layers"

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Lindahl, Johan. "Atomic layer deposition of zinc tin oxide buffer layers for Cu(In,Ga)Se2 solar cells." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-260882.

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The aim of this thesis is to provide an in-depth investigation of zinc tin oxide, Zn1-xSnxOy or ZTO, grown by atomic layer deposition (ALD) as a buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells. The thesis analyzes how changes in the ALD process influence the material properties of ZTO, and how these in turn affect the performance of CIGS solar cells. It is shown that ZTO grows uniformly and conformably on CIGS and that the interface between ZTO and CIGS is sharp with little or no interdiffusion between the layers. The band gap and conduction band energy level of ZTO are dependent both on the [Sn]/([Zn]+[Sn]) composition and on the deposition temperature. The influence by changes in composition is non-trivial, and the highest band gap and conduction band energy level are obtained at a [Sn]/([Zn]+[Sn]) composition of 0.2 at 120  °C. An increase in optical band gap is observed at decreasing deposition temperatures and is associated with quantum confinement effects caused by a decrease in crystallite size. The ability to change the conduction band energy level of ZTO enables the formation of suitable conduction band offsets between ZTO and CIGS with varying Ga-content. It is found that 15 nm thin ZTO buffer layers are sufficient to fabricate CIGS solar cells with conversion efficiencies up to 18.2 %. The JSC is in general 2 mA/cm2 higher, and the VOC 30 mV lower, for cells with the ZTO buffer layer as compared to cells with the traditional CdS buffer layer. In the end comparable efficiencies are obtained for the two different buffer layers. The gain in JSC for the ZTO buffer layer is associated with lower parasitic absorption in the UV-blue region of the solar spectrum and it is shown that the JSC can be increased further by making changes to the other layers in the traditional CdS/i-ZnO/ZnO:Al window layer structure. The ZTO is highly resistive, and it is found that the shunt preventing i-ZnO layer can be omitted, which further increases the JSC. Moreover, an additional increase in JSC is obtained by replacing the sputtered ZnO:Al front contact with In2O3 deposited by ALD. The large gain in JSC for the ZTO/In2O3 window layer stack compensates for the lower VOC related to the ZTO buffer layer, and it is demonstrated that the ZTO/In2O3 window layer structure yields 0.6 % (absolute) higher conversion efficiency than the CdS/i-ZnO/ZnO:Al window layer structure.
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Whiteley, Richard M. "Electro-epitaxial buffer layers for second generation high temperature superconductor tapes." Thesis, University of Oxford, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.419532.

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Lu, Kan. "Lattice-matched (In,Ga)P buffer layers for ZnSe based visible emitters." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/37509.

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Thompson, Michael Dermot. "GaInSb quantum wells grown on metamorphic buffer layers for mid-infrared lasers." Thesis, Lancaster University, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.747981.

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This work studies the use of Ga0.12-0.i6In0.88-0.84Sb quantum wells grown by molec­ular beam epitaxy (MBE) on a highly mismatched substrate for use in light emit­ting diodes (LEDs) and lasers emitting in the 3-4 /μm spectral range. Quantum well samples were grown at Lancaster which had abrupt interfaces and showed room temperature photoluminescence (PL) emission between 3.6 and 4.0 /μm. Trans­mission electron microscope (TEM) imaging revealed a very high defect density of more than 10[10]10 cm-2 in the buffer layer and due to this, Shockley-Read-Hall (SRH) recombination was found to dominate the temperature quenching of the PL emission. Despite the structural problems with the material, the PL quenching performance compared well with other materials designed for this spectral range. Modelling of the quantum wells found that a conduction band offset ratio of 80% gave the best agreement with the experimentally determined transition energies. LEDs fabricated at Lancaster emitted in pulsed mode up to room temperature at 3.6 μm and with an efficiency of 34%. At room temperature SRH recombination was found to dominate the total recombination up to 350 mA drive current and this was also reflected in the temperature quenching of the LED output. From the fitting of the temperature dependence of the LED efficiency the SRH recombination centres were calculated to be 30-50 meV from the centre of the band gap. Fitting the room temperature LED emission spectra revealed that the emission comprised of transitions involving the first two heavy hole states as well as holes in the valence band of the barrier. The emission spectra from the edge of the LED mesa contained amplified spontaneous emission modes which were attributed to radial modes formed due to current crowding under the LED top contact. Lasers fabricated by QinetiQ were examined and from the gain spectra the internal loss was found to be -94 cm- 1 . This was attributed to the high defect density in the structure. The devices emitted at 3.2 /μm at 130 K and from po­larisation measurements it was found that the emission was completely polarised in the TE mode corresponding to emission from the heavy hole band. The lasers tested failed to reach operating temperatures above 130 K due to a sharp increase in the threshold current. An analysis of the temperature dependence of the thresh­old current provided evidence for hole current leakage as the cause of the increase in threshold current between 80 and 130 K.
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Morusu, Madan. "Investigation of CZTSe Solar Cell with ZnS, ZnSe and In2S3 as Buffer Layers." University of Toledo / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1344432907.

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Bowers, Norman Mark. "Metal oxide nanocrystalline thin films as buffer layers in organic/ hybrid solar cells." University of Western Cape, 2019. http://hdl.handle.net/11394/7698.

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>Magister Scientiae - MSc
Without reverting to encapsulation, organic bulk - heterojunction solar cells can be protected from the oxidation of the highly reactive low work function cathode metal electrode, by the deposition of metal oxide buffer layers onto an indium-tin oxide (ITO) substrate. The zinc-oxide (ZnO) or titanium dioxide (TiO2) layer can serve as an electron collecting contact. In such a case the ordering of layer deposition is inverted from the traditional layer sequencing, using an additional effect of the metal oxide layer acting as a hole blocking contact
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Fu, Engang. "Study of epitaxial thin films of YBa2Cu3O7-[delta] on silicon with different buffer layers." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B3637488X.

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Fu, Engang, and 付恩剛. "Study of epitaxial thin films of YBa2Cu3O7-[delta] on silicon with different buffer layers." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B3637488X.

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Polyzoeva, Evelina Aleksandrova. "Tradeoffs of the use of SiGe buffer layers in tandem GaAsP/Si solar cells." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/107289.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 101-103).
III-V multi-junction solar cells currently have the highest reported theoretical and experimental energy conversion efficiency but their cost, mainly attributed to the use of expensive substrates, limits their widespread use for terrestrial applications. Successful integration of III--V's on a Si substrate to enable a III-V/Si tandem cell can lower the cost of energy by combining the high-efficiency of the III--V materials with the low-cost and abundance of the Si substrate. A maximum theoretical efficiency of 44.8% from a tandem cell on Si can be achieved by using a GaAsP (Eg=1.7 eV) as the top cell. Out of several possible integration routes, the use of a linearly graded SiGe buffer as interfacial layer between the two cells potentially yields the highest quality for the epitaxial GaAsP layer, an essential requirement for realization of high-efficiency solar cells. In this thesis, the impact of the SiGe buffer layer on the optical and electrical characteristics of the bottom Si cell of a GaAsP/Si tandem solar cell was assessed via experimental work. The growth of a SiGe buffer layer was shown to increase the threading dislocation density and as a result the leakage current of the bottom Si cell by about 10x. In addition, the low-bandgap SiGe absorbs more than 80% of the light that is intended for the Si sub-cell, reducing the short-circuit current of the Si cell from 33 mA/cm² to only 6 mA/cm². By using a step-cell design, in which the SiGe was partially etched to allow more light to reach the bottom cell, the current was increased to 20 mA/cm². To quantify the merits of the studied approach as well as evaluate other approaches, we have carried out a theoretical study of absorbed irradiance in a Si single-junction cell, a bonded GaAsP/Si tandem cell, a GaAsP/SiGe/Si tandem cell as well as the step-cell design. The GaAsP/Si bonded tandem cell showed 24% relative improvement in light absorption over a single-junction Si cell. The addition of a SiGe graded buffer was shown to reduce the total absorption by 25%, bringing the efficiency of GaAsP/SiGe/Si tandem cell under that of the Si single-junction cell. The step-cell design, even though successful in increasing light absorption, was not found effective in achieving a higher absorbed power density than that of the Si cell. These results suggest that any future work on integrating GaAsP cells on Si towards a high-performance tandem cell should be focused on using a higher-bandgap material as a graded buffer or using a wafer bonding technique.
by Evelina Aleksandrova Polyzoeva.
Ph. D.
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Mosiadz, Mariusz. "Inkjet printing of buffer and superconducting layers for YBa₂Cu₃O₇₋x coated conductors." Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610415.

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Books on the topic "Buffer layers"

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Canada, Atomic Energy of. The mechanism of radionuclide release from waste forms and migration through buffer layers in laboratory lysimeters. S.l: s.n, 1988.

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J, Valco George, and United States. National Aeronautics and Space Administration., eds. Characterization of ZrO₂ buffer layers for sequentially evaporated Y-Ba-Cu-O on Si and Al₂O₃ substrates. [Washington, DC]: NASA, 1988.

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Sharp, Elaine. The effect of the pulsed laser deposition parameters on M[inferior g]O buffer layers for YBa[inferior 2]Cu[inferior 3]O[inferior 7-x]. Birmingham: University of Birmingham, 1996.

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Center, Langley Research, and United States. National Aeronautics and Space Administration., eds. Flow and turbulence modeling and computation of shock buffet onset for conventional and supercritical airfoils. Hampton, Va: National Aeronautics and Space Administration, Langley Research Center, 1998.

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Akin, Yalcin. Development of buffer layers by chemical solution deposition for YBCO coated conductors. 2003.

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Huber, Daniel Anthony. The investigation of ZnSe buffer layers for reduction of defects in heteroepitaxial growth of GaAs on silicon. 1992.

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T. Unix System V Release 3.2 Network Programmer's Guide. Prentice Hall, 1991.

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Unix System V/386 Release 3.2 Network Programmer's Guide, Issue 47. Prentice Hall, 1988.

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Book chapters on the topic "Buffer layers"

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Holzapfel, Bernhard, and Jörg Wiesmann. "Substrates and Functional Buffer Layers." In Handbook of Superconductivity, 334–47. 2nd ed. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780429183027-25.

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Sathyamurthy, S., M. Paranthaman, H.-Y. Zhai, S. Kang, C. Cantoni, S. Cook, L. Heatherly, A. Goyal, and H. M. Christen. "Solution Buffer Layers for YBCO Coated-Conductors." In Ceramic Transactions Series, 1–8. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118406106.ch1.

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Wehmann, H. H., D. Fehly, D. Wüllner, P. Bönsch, A. Schlachetzki, and R. Kúdela. "GaAs and InP on Si with InGaP Buffer Layers." In Heterostructure Epitaxy and Devices — HEAD’97, 127–30. Dordrecht: Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_23.

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Liang, Zhiqiang, and Guozhong Cao. "Nanostructured Cathode Buffer Layers for Inverted Polymer Solar Cells." In NanoScience and Technology, 95–158. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-32023-6_3.

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Toda, Fumihiko, and Tomoyuki Yamada. "Buffer Layers for Oxide Superconducting Thin Films Prepared by MOCVD." In Advances in Superconductivity IX, 1067–70. Tokyo: Springer Japan, 1997. http://dx.doi.org/10.1007/978-4-431-68473-2_99.

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Nekkanti, Rama M., Paul N. Barnes, Lyle B. Brunke, Timothy J. Haugan, Nick A. Yust, Iman Maartense, John P. Murphy, et al. "Pulsed Laser Deposition of Ybco with Yttrium oxide Buffer Layers." In Ceramic Transactions Series, 63–72. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118406106.ch9.

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Ito, Kazuhiro, Yu Uchida, Sang Jin Lee, Susumu Tsukimoto, Yuhei Ikemoto, Koji Hirata, Toshiya Uemura, and Masanori Murakami. "Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes." In Materials Science Forum, 1217–20. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-462-6.1217.

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Wong-Ng, W., Z. Yang, G. Liu, Q. Huang, L. P. Cook, S. Diwanji, C. Lucas, M.-H. Jang, and J. A. Kaduk. "Chemical Interactions of the Ba2YCu3O6+xSuperconductor with Coated Conductor Buffer Layers." In Ceramic Transactions Series, 173–86. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144480.ch19.

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Raevschi, S., L. Gorceac, V. Botnariuc, and T. Braniste. "Growth of P-GaN on Silicon Substrates with ZnO Buffer Layers." In IFMBE Proceedings, 89–92. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_19.

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Myoren, Hiroaki, Toshiaki Okazaki, Hideki Tamura, and Yukio Osaka. "High-T c Superconducting Thin Films on Si with Buffer Layers." In Advances in Superconductivity IV, 683–86. Tokyo: Springer Japan, 1992. http://dx.doi.org/10.1007/978-4-431-68195-3_146.

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Conference papers on the topic "Buffer layers"

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Liu, N. X., J. C. Yan, Z. Liu, P. Ma, J. X. Wang, and J. M. Li. "AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers." In Photonics Asia 2007, edited by Yuwen Zhao, Nuofu Chen, Vladimir M. Andreev, Jai Singh, Jinmin Li, Ling Wu, Yubo Fan, Yong-Hang Zhang, and Michael E. Coltrin. SPIE, 2007. http://dx.doi.org/10.1117/12.756715.

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Olsen, L. C., H. Aguilar, F. W. Addis, Wenhua Lei, and Jun Li. "CIS solar cells with ZnO buffer layers." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564299.

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Lassiter, Brian E., Guodan Wei, Xin Xiao, Siyi Wang, Mark E. Thompson, and Stephen R. Forrest. "Electron conducting buffer layers in organic photovoltaics." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186693.

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Yates, Luke, Thomas L. Bougher, Thomas Beechem, Baratunde A. Cola, and Samuel Graham. "The Impact of Interfacial Layers on the Thermal Boundary Resistance and Residual Stress in GaN on Si Epitaxial Layers." In ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2015 13th International Conference on Nanochannels, Microchannels, and Minichannels. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/ipack2015-48259.

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The development of gallium nitride (GaN) on silicon (Si) substrates is a critical technology for potential low cost power electronics. These devices can accommodate faster switching speeds, hotter temperatures, and high voltages needed for power electronics applications. However, the lattice mismatch and difference in crystal structure between 111 Si and c-axis hexagonal GaN requires the use of buffer layers in order to grow device quality epitaxial layers. For lateral high electron mobility transistors, these interfacial layers act as a potential source of increased thermal boundary resistance (TBR) which impedes heat flow out of the GaN on Si devices. In addition, these interfacial layers impact the growth and residual stress in the GaN epitaxial layer which can play a role in device reliability. In this work we use optical methods to experimentally measure a relatively low TBR for GaN on Si with an intermediate buffer layer to be 3.8 ± 0.4 m2K/GW. The effective TBR of a material stack that encompasses GaN on Si with a superlattice (SL) buffer is also measured, and is found to be 107 ± 1 m2K/GW. In addition the residual state of strain in the GaN layer is measured for both samples, and is found to vary significantly between them. Thermal conductivity of a 0.8μm GaN layer on AlN buffer is determined to be 126 ± 25 W/m-K, while a 0.84 μm GaN layer with C-doping on a SL structure is determined to be 112 ± 29 W/m-K.
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Schörmann, Jörg, Mario F. Zscherp, Nils Mengel, Detlev M. Hofmann, Vitalii Lider, Badrosadat Ojaghi Dogahe, Celina Becker, Andreas Beyer, Kerstin Volz, and Sangam Chatterjee. "Impact of AlN buffer layers on MBE grown cubic GaN layers." In Gallium Nitride Materials and Devices XVIII, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2023. http://dx.doi.org/10.1117/12.2648960.

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Weitzman, P. S., W. Charczenko, A. R. Mickelson, and J. M. Dunn. "Characterization and simulation of proton-exchanged integrated optical modulators with various dielectric buffer layers." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.ff4.

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Fast and accurate numerical techniques are developed for calculating the optical depth of modulation of integrated-optical devices with various dielectric buffer layers. The matrix effective refractive-index (MERI) method is used in calculating the LiNbO3 proton-exchange single-channel optical-mode parameters. An approximate technique for calculating electrode electric field distributions as a function of various buffer layers is presented. Comparisons of computer simulations to experimental measurements performed on Mach-Zehnder modulators containing various buffer layers demonstrate that the numerical techniques are sufficiently accurate for usein computer-aided design. The errors between calculated and measured V(pi) are given for modulators with a 200 nm SiOî buffer layer and with a 200 nm ITO electrode structure. In general, given the same electrode dimensions, the use of ITO electrodes results in a significant reduction of the drive voltage required as compared to electrodes on thin (200 nm) dielectric buffer layers.
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Ehtesha, M., and Eli Turkel. "On buffer layers as non-reflecting computational boundaries." In 34th Aerospace Sciences Meeting and Exhibit. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1996. http://dx.doi.org/10.2514/6.1996-273.

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Sanchez, Y., H. Xie, M. Espindola-Rodriguez, S. Giraldo, M. Placidi, S. Lopez-Marino, V. Izquierdo-Roca, O. Vigil-Galan, and E. Saucedo. "Advanced hybrid buffer layers for Cu2ZnSnSe4 solar cells." In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749870.

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Kanel, H. von, C. Rosenblad, M. Kummer, and E. Muller. "Fast Deposition Process for Graded SiGe Buffer Layers." In 1999 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1999. http://dx.doi.org/10.7567/ssdm.1999.a-13-1.

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Wang, Cailin, Pu Li, Le Su, and Lei Zhang. "A 6.5kV FSRD structure with an epitaxial p buffer and diffused n buffer layers." In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2019. http://dx.doi.org/10.1109/edssc.2019.8754324.

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Reports on the topic "Buffer layers"

1

Bedair, S. M. Defect Reduction in Epitaxial Growth Using Superlattice Buffer Layers. Fort Belvoir, VA: Defense Technical Information Center, July 1988. http://dx.doi.org/10.21236/ada198409.

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Weber, Eicke. Workshop on Low Temperature GaAs Buffer Layers Held 20 Apr 1990, San Francisco. Fort Belvoir, VA: Defense Technical Information Center, March 1992. http://dx.doi.org/10.21236/ada250787.

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B.C. Winkleman, Jr T.V. Giel, and J. Cunningham. DEVELOPMENT OF IN-SITU CONTROL DIAGNOSTICS FOR APPLICATION OF EPITAXIAL SUPERCONDUCTOR AND BUFFER LAYERS. Office of Scientific and Technical Information (OSTI), June 1999. http://dx.doi.org/10.2172/775040.

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B.C. Winkleman, T.V. Giel, and Jason Cunningham. Development of in-situ control diagnostics for application of epitaxial superconductor and buffer layers. Office of Scientific and Technical Information (OSTI), July 1999. http://dx.doi.org/10.2172/754430.

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Howard, A. J., I. J. Fritz, T. J. Drummond, J. A. Olsen, B. E. Hammons, S. R. Kurtz, and T. M. Brennan. MBE grown III-V strain relaxed buffer layers and superlattices characterized by atomic force microscopy. Office of Scientific and Technical Information (OSTI), November 1993. http://dx.doi.org/10.2172/10194922.

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Lordi, Vincenzo. Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics. Office of Scientific and Technical Information (OSTI), September 2016. http://dx.doi.org/10.2172/1331453.

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Salama, Kamel. Epitaxial Growth of Solution Based Buffer Layers on Biaxially Textured Metal Substrates for YBCO Coated Conductors. Fort Belvoir, VA: Defense Technical Information Center, August 2004. http://dx.doi.org/10.21236/ada424842.

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Olsen, L. C. Investigation of polycrystalline thin-film CuInSe{sub 2} solar cells based on ZnSe and ZnO buffer layers. Final report, February 16, 1992--November 15, 1995. Office of Scientific and Technical Information (OSTI), June 1996. http://dx.doi.org/10.2172/266650.

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Ayala, Alicia. Aspects of the SrO-CuO-TiO2 Ternary System Related to the Deposition of SrTiO3 and Copper-Doped SrTiO3 Thin-Film Buffer Layers. Office of Scientific and Technical Information (OSTI), December 2004. http://dx.doi.org/10.2172/836697.

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Bhattacharya, Rabi S., and U. Balachandran. Development of Textured Buffer Layer on Metal Tapes for Oxide Superconductors. Fort Belvoir, VA: Defense Technical Information Center, March 2002. http://dx.doi.org/10.21236/ada399921.

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