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1

Grassi, Flavia, Filippo Marliani, and Sergio A. Pignari. "Circuit Modeling of Injection Probes for Bulk Current Injection." IEEE Transactions on Electromagnetic Compatibility 49, no. 3 (August 2007): 563–76. http://dx.doi.org/10.1109/temc.2007.902385.

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2

Kim, Yanghyun, and Chulhun Seo. "Power Electric Module Verification and Optimization Study using Bulk Current Injection Simulation." Journal of the Institute of Electronics and Information Engineers 59, no. 11 (November 30, 2022): 9–15. http://dx.doi.org/10.5573/ieie.2022.59.11.9.

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3

Pignari, S., and F. G. Canavero. "Theoretical assessment of bulk current injection versus radiation." IEEE Transactions on Electromagnetic Compatibility 38, no. 3 (1996): 469–77. http://dx.doi.org/10.1109/15.536077.

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4

Král, P., and J. E. Sipe. "Quantum kinetic theory of two-beam current injection in bulk semiconductors." Physical Review B 61, no. 8 (February 15, 2000): 5381–91. http://dx.doi.org/10.1103/physrevb.61.5381.

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5

Orlandi, A. "Circuit model for bulk current injection test on shielded coaxial cables." IEEE Transactions on Electromagnetic Compatibility 45, no. 4 (November 2003): 602–15. http://dx.doi.org/10.1109/temc.2003.819060.

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6

Grassi, Flavia, Giordano Spadacini, Filippo Marliani, and Sergio A. Pignari. "Use of Double Bulk Current Injection for Susceptibility Testing of Avionics." IEEE Transactions on Electromagnetic Compatibility 50, no. 3 (August 2008): 524–35. http://dx.doi.org/10.1109/temc.2008.926810.

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7

Miropolsky, S., and S. Frei. "Reproducing system-level bulk current injection test in direct power injection setup for multiple-port DUTs." Advances in Radio Science 11 (July 4, 2013): 177–82. http://dx.doi.org/10.5194/ars-11-177-2013.

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Abstract. Many investigations have been published on the transferability of RF immunity test results between system and IC-levels. The RF signal level at DUT (Device under Test) inputs, i.e. either RF voltage amplitude or RF input current, is used as a reference value for the load on the DUT. Existing approaches analyze the DUT response as a function of the RF signal level at a single input pin, e.g. supply voltage. Sufficient accuracy of such an approach could be shown in several cases, but results are not sufficient as a general solution for complex DUT. This paper proposes both theoretical analysis and practical implementation of a DPI setup, where a disturbance, equivalent to system-level BCI setup, can be delivered to multiple DUT input ports.
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8

Jalalifar, Majid, and Gyung-Su Byun. "An Ultra-Low Power QVCO Using Current-Coupling and Bulk-Injection Techniques." IEEE Microwave and Wireless Components Letters 24, no. 11 (November 2014): 781–83. http://dx.doi.org/10.1109/lmwc.2014.2348318.

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9

Grassi, Flavia, and Sergio A. Pignari. "Bulk Current Injection in Twisted Wire Pairs With Not Perfectly Balanced Terminations." IEEE Transactions on Electromagnetic Compatibility 55, no. 6 (December 2013): 1293–301. http://dx.doi.org/10.1109/temc.2013.2255295.

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10

Kondo, Yosuke, Masato Izumichi, and Osami Wada. "Simulation of Bulk Current Injection Test for Automotive Components Using Electromagnetic Analysis." IEEE Transactions on Electromagnetic Compatibility 60, no. 4 (August 2018): 866–74. http://dx.doi.org/10.1109/temc.2017.2751580.

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11

Lee, Sang‐Gun, and Reiji Hattori. "Current density equations representing the transition between the injection‐ and bulk‐limited currents for organic semiconductors." Journal of Information Display 10, no. 4 (December 2009): 143–48. http://dx.doi.org/10.1080/15980316.2009.9652098.

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12

Aiello, Orazio. "Hall-Effect Current Sensors Susceptibility to EMI: Experimental Study." Electronics 8, no. 11 (November 8, 2019): 1310. http://dx.doi.org/10.3390/electronics8111310.

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The paper deals with the susceptibility to Electromagnetic Interference (EMI) of Hall-effect current sensors. They are usually employed in power systems because of their galvanic isolation. The EMI robustness of such contactless device was compared with that of resistive current sensing (wired method). To this purpose, a printed circuit board (PCB) was fabricated. EMI tests methods such as Bulk Current Injection (BCI), Transverse-Electromagnetic (TEM) cell and Direct Power injection (DPI) were performed to evaluate the robustness of the Hall-Effect current sensor. EMI-induced failures are highlighted by comparing the different measurements tests and setups.
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13

Islam, Mirwazul, and Grigory Simin. "Bulk Current Model for GaN-on-Si High Electron Mobility Transistors." International Journal of High Speed Electronics and Systems 25, no. 01n02 (March 2016): 1640002. http://dx.doi.org/10.1142/s0129156416400024.

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Drain to substrate current is an important parameter affecting loss, breakdown and reliability of power GaN HEMTs on Si substrates; however, no clear model of the current has been established. This work proposes a novel approach describing the drain to substrate current as a function of equivalent Si/GaN interface barrier. The modeling results are in close agreement with experimental observations; they reveal an important role of space charge injection from Si substrate into GaN buffer. Compact model closely reproducing experimental data is presented. The results are important for GaN on Si power switches development.
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14

Kwak, SangKeun, Wansoo Nah, and SoYoung Kim. "Electromagnetic Susceptibility Analysis of I/O Buffers Using the Bulk Current Injection Method." JSTS:Journal of Semiconductor Technology and Science 13, no. 2 (April 30, 2013): 114–26. http://dx.doi.org/10.5573/jsts.2013.13.2.114.

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15

KONDO, Yosuke, Masato IZUMICHI, Kei SHIMAKURA, and Osami WADA. "Modeling of Bulk Current Injection Setup for Automotive Immunity Test Using Electromagnetic Analysis." IEICE Transactions on Communications E98.B, no. 7 (2015): 1212–19. http://dx.doi.org/10.1587/transcom.e98.b.1212.

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16

Mashriki, I. M., S. M. J. Razavi, and S. H. M. Armaki. "Analyzing the Resonance Resultant from the Capacitive Effects in Bulk Current Injection Probe." Radioengineering 29, no. 1 (April 14, 2020): 109–16. http://dx.doi.org/10.13164/re.2020.0109.

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17

Spadacini, G., and S. A. Pignari. "A Bulk Current Injection Test Conforming to Statistical Properties of Radiation-Induced Effects." IEEE Transactions on Electromagnetic Compatibility 46, no. 3 (August 2004): 446–58. http://dx.doi.org/10.1109/temc.2004.831896.

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18

Ge, Haiwen, Jaclyn E. Johnson, Hari Krishnamoorthy, Seong-Young Lee, Jeffrey D. Naber, Nan Robarge, and Eric Kurtz. "A comparison of computational fluid dynamics predicted initial liquid penetration using rate of injection profiles generated using two different measurement techniques." International Journal of Engine Research 20, no. 2 (December 15, 2017): 226–35. http://dx.doi.org/10.1177/1468087417746475.

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The rate of injection profile is a key parameter describing the fuel injection process for diesel injection. It is also an essential input parameter for computational fluid dynamics simulations of spray flows. In the present work, rate of injection profiles of a multi-hole diesel injector were measured using the Zeuch method and the momentum flux method. The rate of injection profiles measured by the momentum flux method had a faster rise in rate of injection during the initial ramp-up phase than with the Zeuch method. The measured rate of injection profiles were applied in three-dimensional computational fluid dynamics simulations of diesel sprays under non-vaporizing and vaporizing conditions with sweeps in injection pressure, bulk charge gas density, and bulk charge gas temperature. Analytical results were compared against experimental data for liquid penetration generated under those conditions. Computational fluid dynamics results with the rate of injection profile measured by the Zeuch method under-predict liquid penetration during the initial ramp-up phase, while computational fluid dynamics results with the rate of injection profiles measured by the momentum flux method showed much better agreement with the experimental data of liquid length and penetration. This suggests that current computational fluid dynamics spray models may be able to more accurately model transient liquid penetration when using the velocity profile developed from momentum flux measurements. Further study is needed to evaluate how computational fluid dynamics predictions of combustion and emissions of affected when using these two rate of injection profiles.
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19

Orlandi, Antonio, Giulio Antonini, and Romeo Michele Rizzi. "Equivalent Circuit Model of a Bundle of Cables for Bulk Current Injection (BCI) Test." IEEE Transactions on Electromagnetic Compatibility 48, no. 4 (November 2006): 701–13. http://dx.doi.org/10.1109/temc.2006.882850.

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20

Toscani, Nicola, Flavia Grassi, Giordano Spadacini, and Sergio A. Pignari. "Circuit and Electromagnetic Modeling of Bulk Current Injection Test Setups Involving Complex Wiring Harnesses." IEEE Transactions on Electromagnetic Compatibility 60, no. 6 (December 2018): 1752–60. http://dx.doi.org/10.1109/temc.2018.2794823.

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21

Singh, Pragati, Rudra Sankar Dhar, and Srimanta Baishya. "Micro-features of ambipolar snapback behaviour under high current injection to design capacitorless memory device." Physica Scripta 96, no. 12 (December 1, 2021): 124069. http://dx.doi.org/10.1088/1402-4896/ac3b69.

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Abstract This paper presents micro-features of capacitorless memory cells based on snapback phenomenon and modeling of space-charges. 2—Dimensional gate grounded NMOS structure is specified and its operational window of the memory cell is inspected using the Synopsys TCAD tool. This work examines snapback behaviour in one transistor DRAM memory cell in the absence of a storage capacitor under zero gate bias and applied ramp of high current at the drain terminal. Carrier electrostatics and memory cell mechanisms are also explored by adjusting the slope of the high current ramp. The process variation is examined for different parameters in the device. The current crowding phenomenon due to the injection of electrons and holes is investigated, giving rise to ambipolar behaviour. Due to the snapback, redistribution of electron and hole current is investigated. This work also evaluates the impact on electrostatic potential along channel and bulk under the snapback. It explains the dependency of snapback on potential build-up. Post-snapback electron current flipping presents the flow line near the gate region. The bipolar activity is manifested in surface and bulk regions to show its impact through analytics. The effect of gate biasing is also examined under the applied current ramp.
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22

Gao, Weiying, and Antoine Kahn. "Electronic structure and current injection in zinc phthalocyanine doped with tetrafluorotetracyanoquinodimethane: Interface versus bulk effects." Organic Electronics 3, no. 2 (June 2002): 53–63. http://dx.doi.org/10.1016/s1566-1199(02)00033-2.

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23

Mashriki, Issa M., Seyyed Mohammad Javad Razavi, and Seyyed Hossein Mohseni Armaki. "Electromagnetic and circuit modelling of a modified design of bulk current injection probe calibration jig." IET Science, Measurement & Technology 14, no. 9 (November 1, 2020): 715–21. http://dx.doi.org/10.1049/iet-smt.2019.0447.

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24

Spadacini, Giordano, Flavia Grassi, Sergio A. Pignari, Patrick Bisognin, and Alexandre Piche. "Bulk Current Injection as an Alternative Radiated Susceptibility Test Enforcing a Statistically Quantified Overtesting Margin." IEEE Transactions on Electromagnetic Compatibility 60, no. 5 (October 2018): 1270–78. http://dx.doi.org/10.1109/temc.2018.2810074.

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25

Asghari, Meysam, and Mohammad Yavari. "Using the Gate–Bulk Interaction and a Fundamental Current Injection to Attenuate IM3 and IM2 Currents in RF Transconductors." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24, no. 1 (January 2016): 223–32. http://dx.doi.org/10.1109/tvlsi.2015.2394244.

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26

Baiocchi, Benedetta, Lorenzo Figini, Alessandro Bruschi, Francesco Fanale, Saul Garavaglia, Gustavo Granucci, and Afra Romano. "ECH and ECCD modelling studies for DTT." EPJ Web of Conferences 277 (2023): 01006. http://dx.doi.org/10.1051/epjconf/202327701006.

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In this work the Electron Cyclotron (EC) physics performances of the EC system foreseen for the new Divertor Tokamak Test facility (DTT) are investigated using the beam tracing code GRAY on the flat top phase of the most recent DTT full power scenario. The whole core plasma region can be reached by EC beams with complete absorption, assuring bulk heating and core current drive (CD) for profile tailoring, and NTM mitigation in correspondence of the rational surfaces. A detailed analysis regarding modifications of the EC propagation, absorption and CD location due to density fluctuations caused by pellet injection is performed. The compatibility between the EC system and the pellet injection system is verified: the density variations due to pellet injection are foreseen to negligibly influence the EC performances, allowing the EC beams to reach the plasma central region for bulk heating and to drive current on the rational surfaces for NTM mitigation. Finally, the polarization variations originated by the angle steering foreseen for the operational and physics tasks accomplishment during the flat top phase of the discharge are assessed. Negligible power losses have been found keeping fixed polarization during the needed steering.
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27

Akinnikawe, Oyewande, Anish Chaudhary, Oscar Vasquez, Chijioke Enih, and Christine A. Ehlig-Economides. "Increasing CO2-Storage Efficiency Through a CO2/Brine-Displacement Approach." SPE Journal 18, no. 04 (June 25, 2013): 743–51. http://dx.doi.org/10.2118/139467-pa.

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Summary Previous studies have shown that bulk carbon dioxide (CO2) injection in deep saline aquifers supplies insufficient aquifer storage efficiency and causes excessive risk because of aquifer pressurization. To avoid pressurization, we propose to produce the same volume of brine as is injected as CO2 in a CO2/brine displacement. Two approaches to CO2/brine displacement are considered—an external brine-disposal strategy in which brine is disposed of into another formation such as oilfield brine and an internal saturated brine-injection strategy with which the produced brine is desalinated and reinjected into the same formation. The displacement strategies increase the storage efficiency from 0.48% for the bulk-injection case to more than 7%. A conceptual case study with documented aquifer properties of the Woodbine aquifer in Texas indicates that the available volume is sufficient to store all the CO2 being generated by power plants in the vicinity for approximately 20 years only. However, the CO2/brine displacement increases storage efficiency enough to store the CO2 produced for at least 240 years at the current rate of coal-fired electric-power generation. Sensitivity analyses on relative permeability, permeability, and temperature were conducted to see the effects of these reservoir parameters on storage efficiency. For bulk injection, increased permeability resulted in increased storage efficiency, but for the CO2/brine-displacement strategies, decreased permeability increased storage efficiency because this resulted in higher average pressure that increased CO2 storage per unit of pore volume (PV) and increased CO2 viscosity. Also, storage efficiencies for the displacement strategies were highly sensitive to relative permeability. There is an optimal CO2-injection temperature below which the formation-fracturing pressure is lowered and above which CO2 breakthrough occurs for a smaller injection mass. The CO2/brine-displacement approach increased capital expenditures for additional wells and an operating expense for produced-brine disposal, but these additional costs are offset by increased CO2-storage efficiency at least 12 times that achieved by the bulk-injection strategy.
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28

Zucchetti, C., F. Scali, P. Grassi, M. Bollani, L. Anzi, G. Isella, M. Finazzi, F. Ciccacci, and F. Bottegoni. "Non-local architecture for spin current manipulation in silicon platforms." APL Materials 11, no. 2 (February 1, 2023): 021102. http://dx.doi.org/10.1063/5.0130759.

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We have developed a non-local architecture for spin current injection, manipulation, and detection in n-doped bulk Si at room temperature. Spins are locally generated at the indirect gap of bulk Si by means of circularly polarized light and then detected by exploiting the inverse spin-Hall effect (ISHE) occurring inside a thin Pt pad deposited at the top of the Si substrate. We demonstrate that it is possible to modulate the transport properties of the optically injected spin current by applying a bias voltage along the direction of motion of the particles. In this case, we are able to explore both the spin diffusion regime, characterized by a spin diffusion length Ls ≈ 12 μm, and the spin drift regime with applied electric fields up to E = 35 V/cm. We demonstrate that the spin transport length of the electrons can be increased (or decreased) by more than 100% for electric fields antiparallel (or parallel) to the diffusion direction. As a consequence, the ISHE signal can be electrically controlled to have high or low output voltages from the non-local device.
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29

Park, Jinsu, Jaemin Kim, Sanchari Showdhury, Changhwan Shin, Hwasung Rhee, Myung Soo Yeo, Eun-Chel Cho, and Junsin Yi. "Electrical Characteristics of Bulk FinFET According to Spacer Length." Electronics 9, no. 8 (August 11, 2020): 1283. http://dx.doi.org/10.3390/electronics9081283.

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This paper confirms that the electrical characteristics of FinFETs such as the on/off ratio, drain-induced barrier lowering (DIBL), and sub-threshold slope (SS) can be improved by optimizing the FinFET spacer structure. An operating voltage that can maintain a life of 10 years or more when hot-carrier injection is extracted. An excellent on/off ratio (7.73×107) and the best SS value were found at 64.29 mV/dec with a spacer length of 90 nm. Under hot carrier-injection conditions, the supply voltages that meet the 10-year lifetime condition are 1.11 V, 1.18 V, and 1.32 V for spacer lengths of 40 nm, 80 nm, and 120 nm, respectively. This experiment confirmed that, even at low drain voltages, the shorter is the spacer length, the greater is the deterioration. However, this increasing maximum operating voltage is very small when compared to the increase in the driving voltage required to achieve similar performance when the spacer length is increased; therefore, the effective life is expected to decrease. The results indicate that structural optimization must be performed to increase the driving current of the FinFET and prevent degradation of the analog performance.
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30

Kim, NaHyun, Wansoo Nah, and SoYoung Kim. "Immunity Test for Semiconductor Integrated Circuits Considering Power Transfer Efficiency of the Bulk Current Injection Method." JSTS:Journal of Semiconductor Technology and Science 14, no. 2 (April 30, 2014): 202–11. http://dx.doi.org/10.5573/jsts.2014.14.2.202.

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31

Sun, Jiangning, Xiaodong Pan, Xinfu Lu, Haojiang Wan, and Guanghui Wei. "Test Method of Bulk Current Injection for High Field Intensity Electromagnetic Radiated Susceptibility Into Shielded Wire." IEEE Transactions on Electromagnetic Compatibility 64, no. 2 (April 2022): 275–85. http://dx.doi.org/10.1109/temc.2021.3120018.

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32

Antonini, G., A. C. Scogna, and A. Orlandi. "Grounding, Unbalancing and Length Effects on Termination Voltages of a Twinax Cable During Bulk Current Injection." IEEE Transactions on Electromagnetic Compatibility 46, no. 2 (May 2004): 302–8. http://dx.doi.org/10.1109/temc.2004.826882.

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33

Cheaito, Hassan, Mor-Sokhna Diop, Marwan Ali, Edith Clavel, Christian Vollaire, and Leonce Mutel. "Virtual Bulk Current Injection: Modeling EUT for Several Setups and Quantification of CM-to-DM Conversion." IEEE Transactions on Electromagnetic Compatibility 59, no. 3 (June 2017): 835–44. http://dx.doi.org/10.1109/temc.2016.2631721.

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34

Lü, Zhihui, Dongwen Zhang, Zhaoyan Zhou, Lin Sun, Zengxiu Zhao, and Jianmin Yuan. "Coherently controlled terahertz source for a time domain spectroscopy system via injection current in bulk ZnSe." Applied Optics 51, no. 5 (February 10, 2012): 676. http://dx.doi.org/10.1364/ao.51.000676.

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35

Yoshimi, R., K. Yasuda, A. Tsukazaki, K. S. Takahashi, M. Kawasaki, and Y. Tokura. "Current-driven magnetization switching in ferromagnetic bulk Rashba semiconductor (Ge,Mn)Te." Science Advances 4, no. 12 (December 2018): eaat9989. http://dx.doi.org/10.1126/sciadv.aat9989.

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Multiferroic materials with both ferroelectric and ferromagnetic orders provide a promising arena for the electrical manipulation of magnetization through the mutual correlation between those ferroic orders. Such a concept of multiferroics may expand to semiconductor with both broken symmetries of spatial inversion and time reversal, that is, polar ferromagnetic semiconductors. Here, we report the observation of current-driven magnetization switching in one such example, (Ge,Mn)Te thin films. The ferromagnetism caused by Mn doping opens an exchange gap in original massless Dirac band of the polar semiconductor GeTe with Rashba-type spin-split bands. The anomalous Hall conductivity is enhanced with increasing hole carrier density, indicating that the contribution of the Berry phase is maximized as the Fermi level approaches the exchange gap. By means of pulse-current injection, the electrical switching of the magnetization is observed in the (Ge,Mn)Te thin films as thick as 200 nm, pointing to the Rashba-Edelstein effect of bulk origin. The efficiency of this effect strongly depends on the Fermi-level position owing to the efficient spin accumulation at around the gap. The magnetic bulk Rashba system will be a promising platform for exploring the functional correlations among electric polarization, magnetization, and current.
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36

PALTIEL, Y., G. JUNG, Y. MYASOEDOV, M. L. RAPPAPORT, E. ZELDOV, S. BHATTACHARYA, and M. J. HIGGINS. "FLUX-FLOW NOISE IN THE VICINITY OF THE PEAK EFFECT." Fluctuation and Noise Letters 02, no. 01 (March 2002): L31—L36. http://dx.doi.org/10.1142/s0219477502000567.

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Strong flux-flow voltage noise, commonly observed in the vicinity of the peak effect in superconductors, is ascribed to a novel noise mechanism. Random injection of the strongly pinned metastable disordered vortex phase through the sample edges and its subsequent random annealing into the weakly pinned ordered phase in the bulk result in large critical current fluctuations causing large vortex velocity fluctuations. In the Corbino disk configuration vortices do not cross sample edges, the injection of the metastable phase is prevented, and accordingly the excess noise is absent.
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37

Suvanam, Sethu Saveda, Luigia Lanni, Bengt Gunnar Malm, Carl Mikael Zetterling, and Anders Hallén. "Total Dose Effects on 4H-SiC Bipolar Junction Transistors." Materials Science Forum 897 (May 2017): 579–82. http://dx.doi.org/10.4028/www.scientific.net/msf.897.579.

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In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.
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38

Dai, Zhenbang, and Andrew M. Rappe. "Recent progress in the theory of bulk photovoltaic effect." Chemical Physics Reviews 4, no. 1 (March 2023): 011303. http://dx.doi.org/10.1063/5.0101513.

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The bulk photovoltaic effect (BPVE) occurs in solids with broken inversion symmetry and refers to DC generation due to uniform illumination, without the need of heterostructures or interfaces, a feature that is distinct from the traditional photovoltaic effect. Its existence has been demonstrated almost 50 years ago, but predictive theories only appeared in the last ten years, allowing for the identification of different mechanisms and the determination of their relative importance in real materials. It is now generally accepted that there is an intrinsic mechanism that is insensitive to scattering, called shift current, where first-principles calculations can now give highly accurate predictions. Another important but more extrinsic mechanism, called ballistic current, is also attracting a great deal of attention, but due to the complicated scattering processes, its numerical calculation for real materials is only made possible quite recently. In addition, an intrinsic ballistic current, usually referred to as injection current, will appear under circularly polarized light and has wide application in experiments. In this review, experiments that are pertinent to the theory development are reviewed, and a significant portion is devoted to discussing the recent progress in the theories of BPVE and their numerical implementations. As a demonstration of the capability of the newly developed theories, a brief review of the materials' design strategies enabled by the theory development is given. Finally, remaining questions in the BPVE field and possible future directions are discussed to inspire further investigations.
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39

Liu, Guannan, Jishan Liu, and Feng Gao. "Constraints of Pore-Bulk Strain Ratio and Interference Time on the Evolution of Coal Permeability during CO2 Injection." Geofluids 2021 (March 16, 2021): 1–16. http://dx.doi.org/10.1155/2021/6616315.

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CO2 injection into coal seam triggers a series of processes that are coupled all together through a permeability model. Previous studies have shown that current permeability models cannot explain experimental data as reported in the literature. This knowledge gap defines the goal of this study. We hypothesize that this failure originates from the assumption that the pore strain is the same as the bulk strain in order to satisfy the Betti-Maxwell reciprocal theorem. This assumption is valid only for the initial state without gas sorption and deformation and for the ultimate state with uniform gas sorption and uniform deformation within the REV (representative elementary volume). In this study, we introduce the pore-bulk strain ratio and interference time to characterize the process of gas sorption and its associated nonuniform deformation from the initial state to the ultimate state. This leads to a new nonequilibrium permeability model. We use the model to fully couple the coal deformation and gas flow. This new coupled model captures the impact of coal local transient behaviors on gas flow. Results of this study clearly show that coal permeability is constrained by the magnitudes of initial and ultimate pore-bulk strain ratios and interference time, that current permeability data in the literature are within these bounds, and that the evolutions of coal permeability all experience similar stages from the initial value to the ultimate one.
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40

Sun, Jiangning, Xiaodong Pan, Xinfu Lu, Haojiang Wan, and Guanghui Wei. "Unshielded Two-Wire Circuit Systems under Weak Unbalance for High-Intensity Radiated Field Radiated Susceptibility by Double Bulk Current Injection." Electronics 11, no. 14 (July 11, 2022): 2175. http://dx.doi.org/10.3390/electronics11142175.

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In unshielded two-wire circuits of weapon systems, the equipment at both ends of the cable needs to be tested at the same time. The theoretical model of substituting double bulk current injection (DBCI) for high-intensity radiated field (HIRF) electromagnetic radiation is established, which aims to calculate the relationship between the injection excitation voltage source and the radiation field intensity. Additionally, the conditions required for linear extrapolation is clarified. Subsequently, the test method of using DBCI for the HIRF radiated susceptibility (RS) is proposed. Next, the verification of the CST studio and the pass-through load test are performed. All results shows that the test method can avoid the influence of the impedance parameters of the two equipment at both ends, which can be applied to nonlinear terminals for the HIRF RS test.
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Tan, Ligang, Ziwen Li, Yunxiu Xiang, Pengfei Feng, and Yage Guo. "A critical analysis of the bulk current injection immunity test based on common-mode and differential-mode." Microelectronics Reliability 91 (December 2018): 188–93. http://dx.doi.org/10.1016/j.microrel.2018.10.004.

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Bajerlein, Maciej, Wojciech Karpiuk, and Rafał Smolec. "Application of Gas Dissolved in Fuel in the Aspect of a Hypocycloidal Pump Design." Energies 15, no. 23 (December 2, 2022): 9163. http://dx.doi.org/10.3390/en15239163.

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The advancement of modern injection systems of diesel engines is related to a constant increase in the injection pressures generated by injection pumps. This translates into an improvement of the engine operation indexes, including the emission-related ones. Such an approach brings a series of problems related to the design, construction and durability of the injection system. Therefore, the authors asked whether the current market trend in injection systems is the only appropriate path to be taken. When searching for the answer, the authors decided to propose an innovative concept consisting of dissolving exhaust gas in diesel fuel with the use of an injection pump. Such a saturated solution, when flowing out of the injection nozzle, begins the process of releasing the gas dissolved in the fuel. This has a positive impact on the atomization process, hence the process of combustion. The aim of this paper stems from the previously performed research. Due to the nature of the phenomenon, it was necessary to propose a new design for the injection pump. For correct selection of the dimensions of the pumping section, it was of key importance to determine the coefficient of solubility and the bulk modulus of the solution of diesel fuel and exhaust gas. Aside from the description of the applied method and the results of the direct measurements, this paper presents the yet undescribed results of the measurements of the coefficient of solubility of different concentrations of exhaust gas in diesel fuel. The authors also investigated the influence of the amount of exhaust gas dissolved in the fuel on the bulk modulus of the solution. The final part of the paper is a description of a proprietary design of a hypocycloidal injection pump. The application of the innovative drive allows a correct dissolution of exhaust gas in the fuel.
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van der Kooij, Renée S., Rob Steendam, Johan Zuidema, Henderik W. Frijlink, and Wouter L. J. Hinrichs. "Microfluidic Production of Polymeric Core-Shell Microspheres for the Delayed Pulsatile Release of Bovine Serum Albumin as a Model Antigen." Pharmaceutics 13, no. 11 (November 3, 2021): 1854. http://dx.doi.org/10.3390/pharmaceutics13111854.

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For many vaccines, multiple injections are required to confer protective immunity against targeted pathogens. These injections often consist of a primer administration followed by a booster administration of the vaccine a few weeks or months later. A single-injection vaccine formulation that provides for both administrations could greatly improve the convenience and vaccinee’s compliance. In this study, we developed parenterally injectable core-shell microspheres with a delayed pulsatile release profile that could serve as the booster in such a vaccine formulation. These microspheres contained bovine serum albumin (BSA) as the model antigen and poly(dl-lactide-co-glycolide) (PLGA) with various dl-lactide:glycolide monomer ratios as the shell material. Highly monodisperse particles with different particle characteristics were obtained using a microfluidic setup. All formulations exhibited a pulsatile in vitro release of BSA after an adjustable lag time. This lag time increased with the increasing lactide content of the polymer and ranged from 3 to 7 weeks. Shell thickness and bovine serum albumin loading had no effect on the release behavior, which could be ascribed to the degradation mechanism of the polymer, with bulk degradation being the main pathway. Co-injection of the core-shell microspheres together with a solution of the antigen that serves as the primer would allow for the desired biphasic release profile. Altogether, these findings show that injectable core-shell microspheres combined with a primer are a promising alternative for the current multiple-injection vaccines.
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Ho, Cheng-Yu, Kai-Syaun Chen, and Tzyy-Sheng Horng. "ESTIMATING RADIATED EMISSION REDUCTION FROM PRINTED CIRCUIT BOARD USING VECTOR NETWORK ANALYZER WITH A BULK CURRENT INJECTION PROBE." Progress In Electromagnetics Research 135 (2013): 1–16. http://dx.doi.org/10.2528/pier12110102.

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He, Kai, Daojie Yu, Baiseng Guo, Mengjuan Chai, Changlin Zhou, and Dongyao Zhang. "An Equivalent Dynamic Test System for Immunity Characterization of the UAV Positioning Module Using Bulk Current Injection Method." IEEE Letters on Electromagnetic Compatibility Practice and Applications 2, no. 4 (December 2020): 161–64. http://dx.doi.org/10.1109/lemcpa.2020.3037499.

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Peng, Ying-Quan, Chang-An Song, and Shuo Sun. "Numerical model for current conduction in single layer organic light-emitting devices including both bulk and injection effects." Semiconductor Science and Technology 19, no. 9 (July 29, 2004): 1117–21. http://dx.doi.org/10.1088/0268-1242/19/9/008.

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Ho, C. Y., K. S. Chen, and T. S. Horng. "Prediction of common-mode radiated emission from PCB using vector network analyzer with a bulk injection current probe." Journal of Electromagnetic Waves and Applications 26, no. 16 (September 21, 2012): 2121–29. http://dx.doi.org/10.1080/09205071.2012.727533.

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Ho, Cheng-Yu, Kai-Syaun Chen, and Tzyy-Sheng Horng. "Estimating the Reduction of Radiated Emissions From Microstrip Components Using Network Analyzer With a Bulk Current Injection Probe." IEEE Microwave and Wireless Components Letters 23, no. 2 (February 2013): 108–10. http://dx.doi.org/10.1109/lmwc.2012.2236887.

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Жуков, Н. Д., В. Ф. Кабанов, А. И. Михайлов, Д. С. Мосияш, А. А. Хазанов, and М. И. Шишкин. "Особенности свойств полупроводников А-=SUP=-III-=/SUP=-В-=SUP=-V-=/SUP=- в мультизеренной наноструктуре." Физика и техника полупроводников 52, no. 1 (2018): 83. http://dx.doi.org/10.21883/ftp.2018.01.45323.8515.

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AbstractThe systematized results of studies of the properties of InAs, InSb, and GaAs semiconductors in a multigrain structure based on measurement and analysis of the current–voltage and spectral characteristics are presented. It is established that electron emission and injection are determined by the localization effects of states in the bulk and surface region of submicron grains. The phenomena of current limitation and lowfield emission characteristic of quantum dots are revealed and studied. The results can be used in studies and in the development of multigrain structures for gas and optical sensors, detectors, and emitters of infrared and terahertz ranges.
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Dhar Badgayan, Nitesh, Santosh Kumar Sahu, Sutanu Samanta, and Pattela Srinivasa Rama Sreekanth. "Assessment of Bulk Mechanical Properties of HDPE Hybrid Composite Filled with 1D/2D Nanofiller System." Materials Science Forum 917 (March 2018): 12–16. http://dx.doi.org/10.4028/www.scientific.net/msf.917.12.

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Current work reports on evaluation of bulk mechanical properties of High Density Polyethylene (HDPE) reinforced with functionalized 1D (Multi Walled Carbon Nanotubes- (MWCNTs) and 2D (hexagonal-Boron Nitride Nanoplatelets-(h-BNNPs) fillers. Mechanical mixing and injection moulding technique was used to prepare the composites. Evaluation of bulk mechanical properties like hardness, yield stress, fracture stress, impact toughness and Young`s modulus was carried out. The optimum properties were exhibited by HDPE/0.25 MWCNT/0.1 BNNP. Hardness, yield stress, fracture stress, impact toughness and Young`s modulus was observed to increase by 93.84, 80.83, 59.23, 115 and 42.05% on comparison with pure HDPE. TEM images confirm the tubular and hexagonal morphology of MWCNT and h-BNNP. It is concluded from test results that addition of MWCNT and h-BNNP into HDPE has improvised mechanical properties.
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