Relevant bibliographies by topics / Bulk-Driven MOS transistor

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Bulk-Driven MOS transistor'

Author: Grafiati
Published: 3 June 2025
Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Bulk-Driven MOS transistor.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Bulk-Driven MOS transistor"

1

Shainda, J. Tahseen*1 Sandeep Singh 2. "REVIEW PAPER ON PSEUDO-DIFFERENTIAL AND BULK-DRIVEN MOS TRANSISTOR TECHNIQUE FOR OTA." INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY 6, no. 7 (2017): 596–601. https://doi.org/10.5281/zenodo.829785.

Full text
Abstract:
This paper presents review on Pseudo-Differential amplifier technique and Bulk-Driven MOS transistor technique for ultra-low voltage and power. By using this technique, a different design of operational transconductance amplifier (OTA) is briefly explained along with their outputs and their application. By using a pseudo-differential technique a voltage drop across the tail current is avoid as the tail-current is removed in Pseudo-differential amplifier where as by using the Bulk-Driven MOS transistor a minimum supply voltage is achieved because of the possibility in reduction of threshold vol
APA, Harvard, Vancouver, ISO, and other styles
2

Carrillo, Juan M., та Carlos A. de la Cruz-Blas. "0.6-V 1.65-μW Second-Order Gm-C Bandpass Filter for Multi-Frequency Bioimpedance Analysis Based on a Bootstrapped Bulk-Driven Voltage Buffer". Journal of Low Power Electronics and Applications 12, № 4 (2022): 62. http://dx.doi.org/10.3390/jlpea12040062.

Full text
Abstract:
A bootstrapping technique used to increase the intrinsic voltage gain of a bulk-driven MOS transistor is described in this paper. The proposed circuit incorporates a capacitor and a cutoff transistor to be connected to the gate terminal of a bulk-driven MOS device, thus achieving a quasi-floating-gate structure. As a result, the contribution of the gate transconductance is cancelled out and the voltage gain of the device is correspondingly increased. The technique allows for implementing a voltage follower with a voltage gain much closer to unity as compared to the conventional bulk-driven cas
APA, Harvard, Vancouver, ISO, and other styles
3

Khateb, Fabian. "The experimental results of the bulk-driven quasi-floating-gate MOS transistor." AEU - International Journal of Electronics and Communications 69, no. 1 (2015): 462–66. http://dx.doi.org/10.1016/j.aeue.2014.10.016.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Khateb, Fabian, Tomasz Kulej, Montree Kumngern, and Costas Psychalinos. "Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications." Circuits, Systems, and Signal Processing 38, no. 6 (2018): 2829–45. http://dx.doi.org/10.1007/s00034-018-0999-x.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Rajesh, Durgam, Tami Subramanian, Raj Nikhil, and Chourasia Bharti. "Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier." Bulletin of Electrical Engineering and Informatics 11, no. 2 (2022): 765–71. https://doi.org/10.11591/eei.v11i2.3306.

Full text
Abstract:
A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low voltage operation and improves the gain of the amplifier. Besides to this the tail current source requirement of operational transconductance amplifier (OTA) is removed by using the flipped voltage follower structure at the input pair along with bulk driven quasi-floating gate MOSFET. The proposed operational transconductance amplifier shows a
APA, Harvard, Vancouver, ISO, and other styles
6

Rajesh, Durgam, Subramanian Tamil, Nikhil Raj, and Bharti Chourasia. "Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier." Bulletin of Electrical Engineering and Informatics 11, no. 2 (2022): 765–71. http://dx.doi.org/10.11591/eei.v11i2.3306.

Full text
Abstract:
A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low voltage operation and improves the gain of the amplifier. Besides to this the tail current source requirement of operational transconductance amplifier (OTA) is removed by using the flipped voltage follower structure at the input pair along with bulk driven quasi-floating gate MOSFET. The proposed operational transconductance amplifier shows a
APA, Harvard, Vancouver, ISO, and other styles
7

Kumngern, Montree, Fabian Khateb, and Tomasz Kulej. "0.5 V, Low-Power Bulk-Driven Current Differencing Transconductance Amplifier." Sensors 24, no. 21 (2024): 6852. http://dx.doi.org/10.3390/s24216852.

Full text
Abstract:
This paper presents a novel low-power low-voltage current differencing transconductance amplifier (CDTA). To achieve a low-voltage low-power CDTA, the BD-MOST (bulk-driven MOS transistor) technique operating in a subthreshold region is used. The proposed CDTA is designed in 0.18 µm CMOS technology, can operate with a supply voltage of 0.5 V, and consumes 1.05 μW of power. The proposed CDTA is used to realize a current-mode universal filter. The filter can realize five standard transfer functions of low-pass, band-pass, high-pass and band-stop, and all-pass from the same circuit. Neither compon
APA, Harvard, Vancouver, ISO, and other styles
8

KHATEB, FABIAN, NABHAN KHATIB, PIPAT PROMMEE, WINAI JAIKLA, and LUKAS FUJCIK. "ULTRA-LOW VOLTAGE TUNABLE TRANSCONDUCTOR BASED ON BULK-DRIVEN QUASI-FLOATING-GATE TECHNIQUE." Journal of Circuits, Systems and Computers 22, no. 08 (2013): 1350073. http://dx.doi.org/10.1142/s0218126613500734.

Full text
Abstract:
This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of ±300 mV and low power consumption of 18 μW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second-order Gm-C
APA, Harvard, Vancouver, ISO, and other styles
9

Khateb, Fabian, Tomasz Kulej, Harikrishna Veldandi, and Winai Jaikla. "Multiple-input bulk-driven quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits." AEU - International Journal of Electronics and Communications 100 (February 2019): 32–38. http://dx.doi.org/10.1016/j.aeue.2018.12.023.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Kumngern, Montree, Fabian Khateb, Tomasz Kulej, and Natchayathorn Wattikornsirikul. "Design of Shadow Filter Using Low-Voltage Multiple-Input Operational Transconductance Amplifiers." Applied Sciences 15, no. 2 (2025): 781. https://doi.org/10.3390/app15020781.

Full text
Abstract:
This paper introduces shadow filters that employ multiple-input operational transconductance amplifiers (MI-OTAs) as the active component. Two configurations of shadow filters are proposed. The first configuration, in contrast to previous designs, enables the adjustment of the quality factor without affecting the passband gains of the BPF, LPF, and HPF, thus achieving optimal frequency responses for these filters. The second configuration allows for the variation of the natural frequency without impacting the passband gains of the HPF, LPF, and BPF, maintaining constant passband gains. Moreove
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Bulk-Driven MOS transistor"

1

Ράικος, Γεώργιος. "Αναλογικά κυκλώματα χαμηλής τροφοδοσίας με MOS τρανζίστορ οδηγούμενα από το υπόστρωμα". Thesis, 2011. http://hdl.handle.net/10889/5093.

Full text
Abstract:
Τα τελευταία χρόνια η ανάγκη για αναλογικά ολοκληρωμένα κυκλώματα με χαμηλή τάση τροφοδοσίας και χαμηλή ισχύ γίνεται κάτι περισσότερο από επιτακτική. Ο βασικότερος λόγος για την ανάγκη αυτή είναι η ραγδαία ανάπτυξη από φορητές ηλεκτρονικές συσκευές για εφαρμογές πολυμέσων (laptops, netbooks, mobiles) έως ολοκληρωμένων συστημάτων βιοιατρικών εφαρμογών. Μάλιστα σε πολλές περιπτώσεις απαιτείται αυτές οι ηλεκτρονικές συσκευές να έχουν δυνατότητα διασύνδεσης σε ασύρματα δίκτυα (WLANs) και επομένως επιβάλλεται η ενσωμάτωση συστημάτων πομποδεκτών. Έτσι, οι απαιτήσεις για όσο το δυνατόν μικρότερη κατα
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Bulk-Driven MOS transistor"

1

Thongleam, Thawatchai, Apirak Suadet, and Varakorn Kasemsuwan. "Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor." In 2016 13th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2016. http://dx.doi.org/10.1109/ecticon.2016.7561359.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Nagyt, Lukas, Daniel Arbet, Martin Kovac, Miroslav Potocny, Michal Sovcik, and Viera Stopjakova. "EKV MOS Transistor Model For Ultra Low-Voltage Bulk-Driven IC Design." In 2021 24th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS). IEEE, 2021. http://dx.doi.org/10.1109/ddecs52668.2021.9417051.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Thongleam, Thawatchai. "Low-voltage CFOA with bulk-driven, quasi-floating-gate and bulk-driven-quasi-floating-gate MOS transistors." In TENCON 2015 - 2015 IEEE Region 10 Conference. IEEE, 2015. http://dx.doi.org/10.1109/tencon.2015.7373175.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Carrillo, J. M., M. A. Dominguez, J. F. Duque-Carrillo, and G. Torelli. "1.2-V fully differential OTA-C lowpass filter based on bulk-driven MOS transistors." In 2011 European Conference on Circuit Theory and Design (ECCTD). IEEE, 2011. http://dx.doi.org/10.1109/ecctd.2011.6043311.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Popa, C., and D. Coada. "A new linearization technique for a CMOS differential amplifier using bulk-driven weak inversion MOS transistors." In International Symposium on Signals, Circuits and Systems, 2003. SCS 2003. IEEE, 2003. http://dx.doi.org/10.1109/scs.2003.1227121.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Bulk-Driven MOS transistor' for particular source types:
Journal articles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography