To see the other types of publications on this topic, follow the link: Bulk-Driven MOS transistor.

Journal articles on the topic 'Bulk-Driven MOS transistor'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 22 journal articles for your research on the topic 'Bulk-Driven MOS transistor.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Shainda, J. Tahseen*1 Sandeep Singh 2. "REVIEW PAPER ON PSEUDO-DIFFERENTIAL AND BULK-DRIVEN MOS TRANSISTOR TECHNIQUE FOR OTA." INTERNATIONAL JOURNAL OF ENGINEERING SCIENCES & RESEARCH TECHNOLOGY 6, no. 7 (2017): 596–601. https://doi.org/10.5281/zenodo.829785.

Full text
Abstract:
This paper presents review on Pseudo-Differential amplifier technique and Bulk-Driven MOS transistor technique for ultra-low voltage and power. By using this technique, a different design of operational transconductance amplifier (OTA) is briefly explained along with their outputs and their application. By using a pseudo-differential technique a voltage drop across the tail current is avoid as the tail-current is removed in Pseudo-differential amplifier where as by using the Bulk-Driven MOS transistor a minimum supply voltage is achieved because of the possibility in reduction of threshold vol
APA, Harvard, Vancouver, ISO, and other styles
2

Carrillo, Juan M., та Carlos A. de la Cruz-Blas. "0.6-V 1.65-μW Second-Order Gm-C Bandpass Filter for Multi-Frequency Bioimpedance Analysis Based on a Bootstrapped Bulk-Driven Voltage Buffer". Journal of Low Power Electronics and Applications 12, № 4 (2022): 62. http://dx.doi.org/10.3390/jlpea12040062.

Full text
Abstract:
A bootstrapping technique used to increase the intrinsic voltage gain of a bulk-driven MOS transistor is described in this paper. The proposed circuit incorporates a capacitor and a cutoff transistor to be connected to the gate terminal of a bulk-driven MOS device, thus achieving a quasi-floating-gate structure. As a result, the contribution of the gate transconductance is cancelled out and the voltage gain of the device is correspondingly increased. The technique allows for implementing a voltage follower with a voltage gain much closer to unity as compared to the conventional bulk-driven cas
APA, Harvard, Vancouver, ISO, and other styles
3

Khateb, Fabian. "The experimental results of the bulk-driven quasi-floating-gate MOS transistor." AEU - International Journal of Electronics and Communications 69, no. 1 (2015): 462–66. http://dx.doi.org/10.1016/j.aeue.2014.10.016.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Khateb, Fabian, Tomasz Kulej, Montree Kumngern, and Costas Psychalinos. "Multiple-Input Bulk-Driven MOS Transistor for Low-Voltage Low-Frequency Applications." Circuits, Systems, and Signal Processing 38, no. 6 (2018): 2829–45. http://dx.doi.org/10.1007/s00034-018-0999-x.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Rajesh, Durgam, Tami Subramanian, Raj Nikhil, and Chourasia Bharti. "Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier." Bulletin of Electrical Engineering and Informatics 11, no. 2 (2022): 765–71. https://doi.org/10.11591/eei.v11i2.3306.

Full text
Abstract:
A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low voltage operation and improves the gain of the amplifier. Besides to this the tail current source requirement of operational transconductance amplifier (OTA) is removed by using the flipped voltage follower structure at the input pair along with bulk driven quasi-floating gate MOSFET. The proposed operational transconductance amplifier shows a
APA, Harvard, Vancouver, ISO, and other styles
6

Rajesh, Durgam, Subramanian Tamil, Nikhil Raj, and Bharti Chourasia. "Low-voltage bulk-driven flipped voltage follower-based transconductance amplifier." Bulletin of Electrical Engineering and Informatics 11, no. 2 (2022): 765–71. http://dx.doi.org/10.11591/eei.v11i2.3306.

Full text
Abstract:
A low voltage high performance design of operational transconductance amplifier is proposed in this paper. The proposed architecture is based on bulk driven quasi-floating gate metal oxide semiconductor field effect transistor (MOSFET) which supports low voltage operation and improves the gain of the amplifier. Besides to this the tail current source requirement of operational transconductance amplifier (OTA) is removed by using the flipped voltage follower structure at the input pair along with bulk driven quasi-floating gate MOSFET. The proposed operational transconductance amplifier shows a
APA, Harvard, Vancouver, ISO, and other styles
7

Kumngern, Montree, Fabian Khateb, and Tomasz Kulej. "0.5 V, Low-Power Bulk-Driven Current Differencing Transconductance Amplifier." Sensors 24, no. 21 (2024): 6852. http://dx.doi.org/10.3390/s24216852.

Full text
Abstract:
This paper presents a novel low-power low-voltage current differencing transconductance amplifier (CDTA). To achieve a low-voltage low-power CDTA, the BD-MOST (bulk-driven MOS transistor) technique operating in a subthreshold region is used. The proposed CDTA is designed in 0.18 µm CMOS technology, can operate with a supply voltage of 0.5 V, and consumes 1.05 μW of power. The proposed CDTA is used to realize a current-mode universal filter. The filter can realize five standard transfer functions of low-pass, band-pass, high-pass and band-stop, and all-pass from the same circuit. Neither compon
APA, Harvard, Vancouver, ISO, and other styles
8

KHATEB, FABIAN, NABHAN KHATIB, PIPAT PROMMEE, WINAI JAIKLA, and LUKAS FUJCIK. "ULTRA-LOW VOLTAGE TUNABLE TRANSCONDUCTOR BASED ON BULK-DRIVEN QUASI-FLOATING-GATE TECHNIQUE." Journal of Circuits, Systems and Computers 22, no. 08 (2013): 1350073. http://dx.doi.org/10.1142/s0218126613500734.

Full text
Abstract:
This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of ±300 mV and low power consumption of 18 μW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second-order Gm-C
APA, Harvard, Vancouver, ISO, and other styles
9

Khateb, Fabian, Tomasz Kulej, Harikrishna Veldandi, and Winai Jaikla. "Multiple-input bulk-driven quasi-floating-gate MOS transistor for low-voltage low-power integrated circuits." AEU - International Journal of Electronics and Communications 100 (February 2019): 32–38. http://dx.doi.org/10.1016/j.aeue.2018.12.023.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Kumngern, Montree, Fabian Khateb, Tomasz Kulej, and Natchayathorn Wattikornsirikul. "Design of Shadow Filter Using Low-Voltage Multiple-Input Operational Transconductance Amplifiers." Applied Sciences 15, no. 2 (2025): 781. https://doi.org/10.3390/app15020781.

Full text
Abstract:
This paper introduces shadow filters that employ multiple-input operational transconductance amplifiers (MI-OTAs) as the active component. Two configurations of shadow filters are proposed. The first configuration, in contrast to previous designs, enables the adjustment of the quality factor without affecting the passband gains of the BPF, LPF, and HPF, thus achieving optimal frequency responses for these filters. The second configuration allows for the variation of the natural frequency without impacting the passband gains of the HPF, LPF, and BPF, maintaining constant passband gains. Moreove
APA, Harvard, Vancouver, ISO, and other styles
11

Durgam, Rajesh, S. Tamil, and Nikhil Raj. "Design of Low Voltage Low Power High Gain Operational Transconductance Amplifier." U.Porto Journal of Engineering 7, no. 4 (2021): 103–10. http://dx.doi.org/10.24840/2183-6493_007.004_0008.

Full text
Abstract:
In this paper, a high gain structure of operational transconductance amplifier is presented. For low voltage operation with improved frequency response bulk driven quasi-floating gate MOSFET is used at the input. Further for achieving high gain the modified self cascode structure is used at the output. Compared to conventional self cascode the modified self cascode structure used provides higher transconductance which helps in significant boosting of gain of the amplifier. The modification is achieved by employing quasi-floating gate transistor which helps in scaling of the threshold which as
APA, Harvard, Vancouver, ISO, and other styles
12

Kulej, Tomasz, Fabian Khateb, and Montree Kumngern. "0.5 V Multiple-Input Fully Differential Operational Transconductance Amplifier and Its Application to a Fifth-Order Chebyshev Low-Pass Filter for Bio-Signal Processing." Sensors 24, no. 7 (2024): 2150. http://dx.doi.org/10.3390/s24072150.

Full text
Abstract:
This paper presents a multiple-input fully differential operational transconductance amplifier (MI-FD OTA) with very low power consumption. To obtain a differential MOS pair with minimum supply voltage and minimum power consumption, the multiple-input bulk-driven MOS transistor operating in the subthreshold region is used. To show the advantage of the MI-FD OTA, a fifth-order Chebyshev filter was used to realize a low-pass filter capable of operating with a supply voltage of 0.5 V and consuming 60 nW at a nominal setup current of 3 nA. The proposed filter uses five MI-FD OTAs and five capacito
APA, Harvard, Vancouver, ISO, and other styles
13

Tasneem, Sadaf, Rajeev Kumar Ranjan, Sajal K. Paul, and Norbert Herencsar. "Power-Efficient Electronically Tunable Fractional-Order Filter." Fractal and Fractional 8, no. 1 (2023): 31. http://dx.doi.org/10.3390/fractalfract8010031.

Full text
Abstract:
This article describes a low-voltage, low-power fractional-order low-pass filter (FO-LPF) of order 1 + α, which is implemented using a voltage differencing differential difference amplifier (VDDDA). The VDDDA structure is implemented using the bulk-driven metal oxide semiconductor transistor technique. The transistors operate in the subthreshold region to maintain low-supply voltage and low-power consumption. The FO-LPF structure implemented using this VDDDA structure is compact. It includes three VDDDAs and three grounded capacitors along with two active resistors implemented using MOS transi
APA, Harvard, Vancouver, ISO, and other styles
14

Kumngern, Montree, Fabian Khateb, and Tomasz Kulej. "1-V Mixed-Mode Universal Filter Using Differential Difference Current Conveyor Transconductance Amplifiers." Applied Sciences 14, no. 20 (2024): 9422. http://dx.doi.org/10.3390/app14209422.

Full text
Abstract:
This paper presents a mixed-mode universal filter using differential difference current conveyor transconductance amplifiers (DDCCTA). Despite using a minimum number of MOS differential pairs, the proposed DDCCTA is a multiple-input, multiple-output device, that was achieved using the multiple-input bulk-driven MOS transistor (MIBD-MOST) technique, multiple-output current followers and transconductance gains. A subthreshold technique is used to achieve minimum power consumption of the DDCCTA. Thanks to the multiple-input and multiple-output of DDCCTA, the mixed-mode universal filter based on t
APA, Harvard, Vancouver, ISO, and other styles
15

Kumngern, Montree, Fabian Khateb, Tomasz Kulej, and Somkiat Lerkvaranyu. "0.5-V High-Order Universal Filter for Bio-Signal Processing Applications." Applied Sciences 15, no. 7 (2025): 3969. https://doi.org/10.3390/app15073969.

Full text
Abstract:
In this paper, a novel multiple-input operational transconductance amplifier (MI-OTA) is proposed. The MI-OTA can be obtained by using the multiple-input bulk-driven MOS transistor (MIBD MOST) technique. The circuit structure is simple, can operate with a supply voltage of 0.5 V, and consumes 937 pW at a current setting of 625 pA. The proposed MI-OTA was used to implement a high-order multiple-input voltage-mode universal filter. The proposed filter can provide non-inverting and inverting low-pass, high-pass, band-pass, band-stop, and all-pass transfer functions to the same topology. In additi
APA, Harvard, Vancouver, ISO, and other styles
16

Kumngern, Montree, Fabian Khateb, and Tomasz Kulej. "Novel Multiple-Input Single-Output Shadow Filter with Improved Passband Gain Using Multiple-Input Multiple-Output DDTAs." Electronics 14, no. 7 (2025): 1417. https://doi.org/10.3390/electronics14071417.

Full text
Abstract:
This paper presents a multiple-input single-output (MISO) shadow filter implemented using multiple-input differential difference transconductance amplifiers (MI-DDTAs). The MI-DDTA’s multiple inputs are realized through the multiple-input bulk-driven MOS transistor (MI-BD MOST) technique. Leveraging the multiple-input capability of the DDTA, various filter responses—low-pass filter (LPF), high-pass filter (HPF), band-pass filter (BPF), band-stop filter (BSF), and all-pass filter (APF)—can be efficiently achieved by appropriately configuring the input signals. The natural frequency and quality
APA, Harvard, Vancouver, ISO, and other styles
17

Khateb, Fabian, Montree Kumngern, Tomasz Kulej, and Jiri Vavra. "A 328 nW, 0.45 V Current Differencing Transconductance Amplifier and Its Application in a Current-Mode Universal Filter." Applied Sciences 15, no. 7 (2025): 3471. https://doi.org/10.3390/app15073471.

Full text
Abstract:
This paper presents a low-voltage, low-power current differencing transconductance amplifier (CDTA) utilizing the bulk-driven MOS transistor technique in the subthreshold region for reduced voltage and power consumption. The proposed CDTA includes a z-copy terminal, which enhances its functionality in current-mode circuit applications. Designed in the Cadence Virtuoso environment using 0.18 µm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC), the amplifier operates with a supply voltage of 0.45 V and consumes 328 nW of power, with a bias current set to 10 nA. The current
APA, Harvard, Vancouver, ISO, and other styles
18

Kumngern, Montree, Fabian Khateb, Tomasz Kulej, and Boonying Knobnob. "1 V Tunable High-Quality Universal Filter Using Multiple-Input Operational Transconductance Amplifiers." Sensors 24, no. 10 (2024): 3013. http://dx.doi.org/10.3390/s24103013.

Full text
Abstract:
This paper presents a new multiple-input single-output voltage-mode universal filter employing four multiple-input operational transconductance amplifiers (MI-OTAs) and three grounded capacitors suitable for low-voltage low-frequency applications. The quality factor (Q) of the filter functions can be tuned by both the capacitance ratio and the transconductance ratio. The multiple inputs of the OTA are realized using the bulk-driven multiple-input MOS transistor technique. The MI-OTA-based filter can also offer many filtering functions without additional circuitry requirements, such as an inver
APA, Harvard, Vancouver, ISO, and other styles
19

Khateb, Fabian, Montree Kumngern, and Tomasz Kulej. "0.5-V 281-nW Versatile Mixed-Mode Filter Using Multiple-Input/Output Differential Difference Transconductance Amplifiers." Sensors 24, no. 1 (2023): 32. http://dx.doi.org/10.3390/s24010032.

Full text
Abstract:
This paper presents a new low-voltage versatile mixed-mode filter which uses a multiple-input/output differential difference transconductance amplifier (MIMO-DDTA). The multiple-input of the DDTA is realized using a multiple-input bulk-driven MOS transistor (MI-BD-MOST) technique to maintain a single differential pair, thereby achieving simple structure with minimal power consumption. In a single topology, the proposed filter can provide five standard filtering functions (low-pass, high-pass, band-pass, band-stop, and all-pass) in four modes: voltage (VM), current (CM), transadmittance (TAM),
APA, Harvard, Vancouver, ISO, and other styles
20

Rakús, Matej, Viera Stopjaková, and Daniel Arbet. "Design techniques for low-voltage analog integrated circuits." Journal of Electrical Engineering 68, no. 4 (2017): 245–55. http://dx.doi.org/10.1515/jee-2017-0036.

Full text
Abstract:
AbstractIn this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or
APA, Harvard, Vancouver, ISO, and other styles
21

Kumngern, Montree, Fabian Khateb, Tomasz Kulej, and Pavel Steffan. "0.3-V Voltage-Mode Versatile First-Order Analog Filter Using Multiple-Input DDTAs." Sensors 23, no. 13 (2023): 5945. http://dx.doi.org/10.3390/s23135945.

Full text
Abstract:
This paper presents a versatile first-order analog filter using differential difference transconductance amplifiers (DDTAs). The DDTA employs the bulk-driven (BD) multiple-input MOS transistors technique (MI-MOST) operating in the subthreshold region. This results in low-voltage and low-power operational capability. Therefore, the DDTA, designed using 130 nm CMOS technology from UMC in the Cadence environment, operates with 0.3 V and consumes 357.4 nW. Unlike previous works, the proposed versatile first-order analog filter provides first-order transfer functions of low-pass, high-pass, and all
APA, Harvard, Vancouver, ISO, and other styles
22

Nagy, Lukas, Miroslav Potocny, Robert Ondica, Adam Hudec, and Viera Stopjakova. "A Novel Ultra Low-Voltage / Low-Power Rail-to-Rail Comparator Topology in Nanoscale CMOS Technology." May 17, 2023. https://doi.org/10.5281/zenodo.7943698.

Full text
Abstract:
The article addresses a novel topology of analog voltage comparator capable of processing the input voltage in rail-to-rail range. We propose two different innovative comparator topologies. One topology is employing a standard “gate-driven” (GD) control of MOS transistors and designed in 65 nm CMOS technology. The other one, designed in 130 nm CMOS technology, uses rather unconventional “bulk-driven” (BD) control of active devices in the circuit. Each  presented circuit topology has its own pros and cons, however both are suitable and actually aimed for ultra low-v
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!