Academic literature on the topic 'BULK SEMICONDUCTING'

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Journal articles on the topic "BULK SEMICONDUCTING"

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Look, D. C., P. W. Yu, W. M. Theis, et al. "Semiconducting/semi‐insulating reversibility in bulk GaAs." Applied Physics Letters 49, no. 17 (1986): 1083–85. http://dx.doi.org/10.1063/1.97429.

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Solozhenko, Vladimir L., Natalia A. Dubrovinskaia, and Leonid S. Dubrovinsky. "Synthesis of bulk superhard semiconducting B–C material." Applied Physics Letters 85, no. 9 (2004): 1508–10. http://dx.doi.org/10.1063/1.1786363.

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Ye, Yumin, Dominick J. Bindl, Robert M. Jacobberger, Meng-Yin Wu, Susmit Singha Roy, and Michael S. Arnold. "Semiconducting Carbon Nanotube Aerogel Bulk Heterojunction Solar Cells." Small 10, no. 16 (2014): 3299–306. http://dx.doi.org/10.1002/smll.201400696.

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Mahmood, A., and L. Enrique Sansores. "Band structure and bulk modulus calculations of germanium carbide." Journal of Materials Research 20, no. 5 (2005): 1101–6. http://dx.doi.org/10.1557/jmr.2005.0172.

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Band-structure calculations of germanium carbide (GeC) show that it is a new indirect wide band gap semiconducting material, which crystallizes in both cubic and hexagonal phases. Through the density functional and total-energy technique in the generalized gradient approximation, the two polytypes 3C and 2H of GeC were studied. According to our calculations, it is a hard material with a percentage of covalency of about 80–90%. Important energy gaps were determined. The bulk modulus, density of states, and charge density were calculated. For the bulk modulus calculations, Murnaghan’s equation o
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Zuo, H., R. D. Griffin, G. M. Janowski, and R. N. Andrews. "Characterization of Bulk-Grown Hg1-xcdxTe." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 902–3. http://dx.doi.org/10.1017/s0424820100088828.

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The II-VI semiconducting compounds are of particular interest due to the ability to compositionally tune them to detect infrared radiation in the 0.5 to 30 μm range. With the demand for advanced imaging systems, there is an immediate need for bulk II-VI materials with improved compositional homogeneity and structural perfection. The performance of optical semiconductors is very sensitive to the presence of defects such as dislocations, precipitates, and boundaries.
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Casellas, Nicolás M., Indre Urbanaviciute, Tim D. Cornelissen, et al. "Resistive switching in an organic supramolecular semiconducting ferroelectric." Chemical Communications 55, no. 60 (2019): 8828–31. http://dx.doi.org/10.1039/c9cc02466b.

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Hua, Chi-Chung, Chih-Yuan Kuo, and Show-An Chen. "Controlling bulk aggregation state in semiconducting conjugated polymer solution." Applied Physics Letters 93, no. 12 (2008): 123303. http://dx.doi.org/10.1063/1.2988193.

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He, Yuping, Ivana Savić, Davide Donadio, and Giulia Galli. "Lattice thermal conductivity of semiconducting bulk materials: atomistic simulations." Physical Chemistry Chemical Physics 14, no. 47 (2012): 16209. http://dx.doi.org/10.1039/c2cp42394d.

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Hua, Chi Chung, Chih Jung Lin, Yu Ho Wen, and Show An Chen. "Stabilization of bulk aggregation state in semiconducting polymer solutions." Journal of Polymer Research 18, no. 4 (2010): 793–800. http://dx.doi.org/10.1007/s10965-010-9476-3.

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Jiang, Li-Feng, Lei Xu, and Jun Zhang. "Electronic properties of armchair graphene nanoribbons under uniaxial strain and electric field." International Journal of Modern Physics B 32, no. 24 (2018): 1850263. http://dx.doi.org/10.1142/s0217979218502636.

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The armchair graphene nanoribbons (AGNRs) can be either semiconducting or metallic, depending on their widths. We investigate the electronic properties of AGNRs under uniaxial strain and electric field. We find that the bulk gap decreases gradually with the increase of the electric field for semiconducting case, but it cannot vanish completely in an appropriate range, which is similar to that of a single uniaxial strain. However, a suitable combination of electric field and uniaxial strain can lead to that the energy gap completely vanishes and reopens. For the metallic case, the bulk gap can
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Dissertations / Theses on the topic "BULK SEMICONDUCTING"

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Lafalce, Evan. "Photophysical and Electronic Properties of Low-Bandgap Semiconducting Polymers." Scholar Commons, 2014. https://scholarcommons.usf.edu/etd/5424.

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In this Ph.D. work, we investigate the optoelectronic properties of low-bandgap semiconducting polymers and project the potential for employing these materials in electronic and photonics devices, with a particular emphasis on use in organic solar cells. The field of organic solar cells is well developed and many of the fundamental aspects of device operation and material requirements have been established. However, there is still more work to be done in order for these devices to ultimately reach their full potential and achieve commercialization. Of immediate concern is the low power convers
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Chan, Ka Hin. "Charge injection and transport characterization of semiconducting polymers and their bulk heterojunction blends." HKBU Institutional Repository, 2012. https://repository.hkbu.edu.hk/etd_ra/1405.

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PRAVEEN. "STUDY OF THIN FILM AND BULK SEMICONDUCTING MATERIALS FOR INTERFACE STRUCTURE AND OTHER PROPERTIES." Thesis, DELHI TECHNOLOGICAL UNIVERSITY, 2021. http://dspace.dtu.ac.in:8080/jspui/handle/repository/18645.

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Thermoelectric device has ability to modify thermal energy into electrical energy or vice versa, and such devices may propose a fabulous possibility in settling of energy problem from an environmental-sustainable aspect. Climate change issue and worldwide shortage of energy is creating exaggerated interests in other new spectacular contrivance of power generation with translucent energy sources. Whenever, the absence of any liquid media or other moving parts, a temperature gradient imposed between the hot and cold junction. A thermoelectric material plays an important role in primary power gen
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Budde, Melanie. "Heteroepitaxy, surface- and bulk hole transport, and application of the p-type semiconducting oxides NiO and SnO." Doctoral thesis, Humboldt-Universität zu Berlin, 2020. http://dx.doi.org/10.18452/22240.

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Die vorliegende Arbeit ist eine umfassende Studie über das Wachstum mittels Molekularstrahlepitaxie (MBE) und die gemessenen Seebeck Koeffizienten und Lochtransport Eigenschaften von p‑Typ Oxiden, eine Materialklasse welche die optische Transparenz und die einstellbare Leitfähigkeit verbindet. Insbesondere, Nickeloxid (NiO) und Zinnmonoxid (SnO) wurden mittels plasmaunterstützter MBE unter Einsatz von einer Metall‑Effusionszelle und einem Sauerstoffplasma gewachsen. Für das NiO Wachstum wurden vor allem die Wachstumsgrenzen bei hohen Temperaturen festgelegt, welche von der Substratstabilität
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Budde, Melanie [Verfasser]. "Heteroepitaxy, surface- and bulk hole transport, and application of the p-type semiconducting oxides NiO and SnO / Melanie Budde." Berlin : Humboldt-Universität zu Berlin, 2020. http://d-nb.info/122392355X/34.

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Sree, Rama Murthy A. "Physicochemical Characterization and Gas Sensing Studies of Cr1-xFexNbO4 and Application of Principal Component Analysis." Thesis, 2016. http://etd.iisc.ac.in/handle/2005/3215.

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Monitoring the working environment of laboratories and industries for pollutants is of primary concern to ensure the healthiness of working personnel. Semiconducting metal oxides (SMOs) are sensitive to the gas ambience and can be tuned for sensing purpose. As SMOs are not selective, an array of sensors with differential selectivity may resolve to great extent. The objective of the thesis is to understand the physicochemical properties and gas sensing characteristics of Cr1-xFexNbO4. Applying principal component analysis to the sensor response data either for selection of features or for diffe
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Sree, Rama Murthy A. "Physicochemical Characterization and Gas Sensing Studies of Cr1-xFexNbO4 and Application of Principal Component Analysis." Thesis, 2016. http://hdl.handle.net/2005/3215.

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Monitoring the working environment of laboratories and industries for pollutants is of primary concern to ensure the healthiness of working personnel. Semiconducting metal oxides (SMOs) are sensitive to the gas ambience and can be tuned for sensing purpose. As SMOs are not selective, an array of sensors with differential selectivity may resolve to great extent. The objective of the thesis is to understand the physicochemical properties and gas sensing characteristics of Cr1-xFexNbO4. Applying principal component analysis to the sensor response data either for selection of features or for diffe
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Books on the topic "BULK SEMICONDUCTING"

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GaAs and related materials: Bulk semiconducting and superlattice properties. World Scientific, 1994.

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Transparent Semiconducting Oxides: Bulk Crystal Growth and Fundamental Properties. Jenny Stanford Publishing, 2020.

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Galazka, Zbigniew. Transparent Semiconducting Oxides: Bulk Crystal Growth and Fundamental Properties. Jenny Stanford Publishing, 2020.

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Galazka, Zbigniew. Transparent Semiconducting Oxides: Bulk Crystal Growth and Fundamental Properties. Jenny Stanford Publishing, 2020.

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Galazka, Zbigniew. Transparent Semiconducting Oxides: Bulk Crystal Growth and Fundamental Properties. Jenny Stanford Publishing, 2020.

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Book chapters on the topic "BULK SEMICONDUCTING"

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White, Matthew Schuette, and Niyazi Serdar Sariciftci. "Semiconducting Polymer-based Bulk Heterojunction Solar Cells." In Polymers for Energy Storage and Conversion. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118734162.ch7.

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Bonner, W. A., and A. G. Ostrogorsky. "Bulk Ternary Semiconducting Compounds." In Encyclopedia of Materials: Science and Technology. Elsevier, 2001. http://dx.doi.org/10.1016/b0-08-043152-6/00165-0.

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Galazka, Zbigniew. "Basics of Growth Techniques Used for Bulk Single Crystals of Transparent Semiconducting Oxides." In Transparent Semiconducting Oxides. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.1201/9781003045205-1.

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Galazka, Zbigniew. "Basics of Growth Techniques Used for Bulk Single Crystals of Transparent Semiconducting Oxides." In Transparent Semiconducting Oxides. Jenny Stanford Publishing, 2020. http://dx.doi.org/10.4324/9781003045205-1.

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Schaeffer, H. A. "Silicon Dioxide: Bulk Properties." In Concise Encyclopedia of Semiconducting Materials & Related Technologies. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-08-034724-0.50105-0.

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Riley, F. L. "Silicon Nitride: Bulk Properties." In Concise Encyclopedia of Semiconducting Materials & Related Technologies. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-08-034724-0.50106-2.

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Bellon, P., J. P. Chevalier, G. Martin, P. Deconinck, and J. Maluenda. "Bulk and surface defects in implanted and annealed GaAs." In Microscopy of Semiconducting Materials, 1987. CRC Press, 2020. http://dx.doi.org/10.1201/9781003069621-50.

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Elliot, A. G., and E. D. Bourret. "Growth of Semiconductor Bulk Single Crystals." In Concise Encyclopedia of Semiconducting Materials & Related Technologies. Elsevier, 1992. http://dx.doi.org/10.1016/b978-0-08-034724-0.50055-x.

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Vennéguès, P., M. Leroux, S. Dalmasso, M. Benaissa, P. De Mierry, and B. Beaumone. "Atomic structure of Mg-induced pyramidal inversion domains in bulk GaN." In Microscopy of Semiconducting Materials 2003. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074636-63.

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Galazka, Zbigniew. "Growth Measures to Achieve Bulk Single Crystals of Transparent Semiconducting and Conducting Oxides." In Handbook of Crystal Growth. Elsevier, 2015. http://dx.doi.org/10.1016/b978-0-444-63303-3.00006-7.

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Conference papers on the topic "BULK SEMICONDUCTING"

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Luhong Mao, Niefeng Sun, Xiaolong Zhou, et al. "Character of non-stoichiometric InP bulk crystal." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511376.

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Kumari, Vinay, Vinod Kumar, B. P. Malik, et al. "Two Photon Absorption And Refraction in Bulk of the Semiconducting Materials." In OPTICS: PHENOMENA, MATERIALS, DEVICES, AND CHARACTERIZATION: OPTICS 2011: International Conference on Light. AIP, 2011. http://dx.doi.org/10.1063/1.3643652.

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Silvestri, Markus R., Peter D. Persans, and John Schroeder. "Pressure-tuned spectroscopy of II–VI semiconducting nanocrystals." In OSA Annual Meeting. Optica Publishing Group, 1993. http://dx.doi.org/10.1364/oam.1993.thvv.1.

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Here CdSxSe1-x nanocrystals were studied and characterized by resonant Raman scattering, low frequency inelastic scattering, pressure tuned Raman scattering and photoluminescence. Ordinary Raman scattering and low frequency inelastic scattering were used for composition and size characterization. In the photoluminescence spectra we found that the deep defects where symbatic for compositions in the range close to CdS. For intermediate compositions down to CdSe no marked change in the defect peak positions were observed. This behavior is similar to the bulk case.1 Also the pressure coefficients
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Auret, F. D., M. Hayes, W. E. Meyer, J. M. Nel, L. Wu, and M. J. Legodi. "Electrical characterization of as-grown and particle irradiated n-type bulk ZnO." In 2004 13th International Conference on Semiconducting and Insulating Materials. IEEE, 2004. http://dx.doi.org/10.1109/sim.2005.1511422.

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Yi-Hsing Peng, Weilou Cao, Min Du, Danilo Romero, Warren N. Herman, and Chi H. Lee. "Study of transient effects in photo-excited semiconducting polymer and bulk heterojunctions." In 2007 Quantum Electronics and Laser Science Conference. IEEE, 2007. http://dx.doi.org/10.1109/qels.2007.4431219.

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Peng, Yi-Hsing, Weilou Cao, Min Du, Danilo Romero, Warren N. Herman, and Chi H. Lee. "Study of transient effects in photo-excited semiconducting polymer and bulk heterojunctions." In CLEO 2007. IEEE, 2007. http://dx.doi.org/10.1109/cleo.2007.4453442.

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Beek, Waldo J. E., Martijn M. Wienk, and René A. J. Janssen. "Hybrid bulk heterojunction solar cells: blends of ZnO semiconducting nanoparticles and conjugated polymers." In Optics & Photonics 2005, edited by Zakya H. Kafafi and Paul A. Lane. SPIE, 2005. http://dx.doi.org/10.1117/12.614911.

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Hu, Zhijing, Tao Shen, and Thomas Wong. "Evolution of plasmonic response of a semiconducting particle: Transition from surface to bulk phenomena." In 2017 Progress in Electromagnetics Research Symposium - Fall (PIERS - FALL). IEEE, 2017. http://dx.doi.org/10.1109/piers-fall.2017.8293481.

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Hickey, Carolyn F., and Ursula J. Gibson. "Optical properties of SmS thin films." In OSA Annual Meeting. Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.thn3.

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Samarium monosulfide is a phase transition material which, in bulk, is a semiconductor at ambient temperature and pressure. An increase of pressure or stress leads to a lattice collapse and first-order transition to a metallic state. Reactively evaporated thin films of SmS have a granular structure, and their optical response differs from that of the bulk. The response is modeled using data on the bulk material and a Bruggemen effective medium theory. When the phase transition is induced by mechanical abrasion of the films, only a portion of the material undergoes the lattice collapse. We mode
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Jenekhe, Samson A., and X. Linda Chen. "Self-Organized Organic Semiconductor Quantum Wires and Boxes." In Chemistry and Physics of Small-Scale Structures. Optica Publishing Group, 1997. http://dx.doi.org/10.1364/cps.1997.csub.5.

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The growing interest in semiconducting polymers as device materials 1-3 for applications such as thin films transistors, light-emitting diodes, lasers, and photodectors has also stimulated theoretical and experimental interest in low-dimensional organic semiconductors. 4-8 It is expected that organic quantum wells, quantum wires, quantum boxes, and superlattices may exhibit strong excitonic effects and large exciton binding energies [~0.5 -1.0 eV] in part because of the relatively small dielectric constants of organic molecules and polymers [~3 - 4].4-6 In spite of the many theoretical studies
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