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Journal articles on the topic 'BZT'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Ma, Cai Bing, Xin Gui Tang, De Ping Xiong, Yan Ping Jiang, and Qiu Xiang Liu. "Ferroelectric and Optical Properties of BST/BZT/BST Sandwich Structure Thin Films Prepared by RF Sputtering." Applied Mechanics and Materials 164 (April 2012): 47–51. http://dx.doi.org/10.4028/www.scientific.net/amm.164.47.

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In this work, (Ba0.65Sr0.35)TiO3 (BST) and Ba(Zr0.20Ti0.80)O3 (BZT) ceramic targets were prepared using the traditional solid-state reaction technique, which were sintered at 1200 °C for 2 h. The thin films of BST, BZT and sandwich structure BST/BZT/BST were grown on Pt/Ti/SiO2/Si(100) and Si(100) substrates by rf-sputtering at 500 °C, respectively. And all samples crystallied at temperatures 650 °C for 30 min in oxygen atmosphere. The cross-sectional images of the thin films were characterized by scanning electron microscope (SEM). The dielectric constant and dissipation factor tan of the BZT, BST and BST/BZT/BST thin films are 680 and 0.030, 240 and 0.021, 85 and 0.018, respectively at 100 kHz. Compared with BST and BZT films, the BST/BZT/BST film has lower dielectric constant and lower dissipation. The remanent polarization (Pr) of the sandwich structure BST/BZT/BST thin film is up to 9.57 μC/cm2, the Pr value is larger than that BST (0.25μC/cm2) film and BZT (8.45μC/cm2) film. The optical properties (refractive index n and extinction coefficient k) of the BST/BZT/BST film on Si(100) substrate were measured by n & k analyzer 2000.

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2

QIN, W. F., J. ZHU, J. XIONG, J. L. TANG, W. J. JIE, Y. ZHANG, and Y. R. LI. "DIELECTRIC CHARACTERISTICS OF BST/BZT/BST MULTILAYER." Surface Review and Letters 15, no. 01n02 (February 2008): 195–200. http://dx.doi.org/10.1142/s0218625x08011238.

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Ba 0.6 Sr 0.4 TiO 3 (BST) and Ba 0.6 Sr 0.4 TiO 3/ Ba ( Zr 0.2 Ti 0.8) O 3/ Ba 0.6 Sr 0.4 TiO 3 (BST/BZT/BST) multilayer (ML) films were prepared by pulsed laser deposition on the LaNiO 3-coated LaAlO 3 substrate. X-ray diffraction analysis revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases and atomic force microscopy showed that the grain size of ML films was similar to BST films in size. The dielectric properties of the BST and ML thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. The results revealed that the dielectric tunability for ML films slightly decreased, while the loss decreased synchronously. The figure-of-merit factor value increases from 17.32 for BST films to 42.14 for ML films under an applied electric field of 300 kV/cm. The leakage current density of the BST thin films at a positive bias field of 300 kV/cm decreases from 3.76 × 10-6 to 1.25 × 10-7 A/cm2 for ML films. This work clearly reveals the highly promising potential of BST/BZT/BST multilayer films compared with BST films for application in tunable microwave devices.

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3

QIN, Wen-Feng, Jie XIONG, and Yan-Rong LI. "Structure and Properties of BST/BZT/BST Multilayer Film." Journal of Inorganic Materials 25, no. 3 (March 30, 2010): 247–50. http://dx.doi.org/10.3724/sp.j.1077.2010.00247.

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4

Zhang, Cheng, Qi Bin Liu, and Xiao Qin Huang. "Effect of Sintering Temperature on Microstructure and Electrical Properties of (Mn, Nb)-Doped BZT-BCT Ceramics." Advanced Materials Research 820 (September 2013): 59–62. http://dx.doi.org/10.4028/www.scientific.net/amr.820.59.

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To obtain lead-free 0.5Ba (Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 ceramics with excellent microstructure and electrical properties, BZT-BCT ceramics doping Mn4+ and Nb5+ was synthesized follow a conventional solid state reaction route. By means of SEM, XRD, quasi-static d33 meter, the influence of sintering temperature on microstructure, piezoelectric and dielectric properties of BZT-BCT-Mn-Nb ceramics was discussed. The results show that grain size and the dielectric loss of BZT-BCT-Mn-Nb ceramics increase as raising the sintering temperature. When BZT-BCT-Mn-Nb ceramics is sintered at 1380°C, the optimum piezoelectric coefficient and dielectric constant are 264pC/N and 4142, respectively.

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5

Di Loreto, A., A. Frattini, S. Barolin, and O. de Sanctis. "CARACTERIZATION OF BZT POWDERS PREPARED BY MECANOCHEMICAL ACTIVATION." Anales AFA 21, no. 1 (September 1, 2010): 205–8. http://dx.doi.org/10.31527/analesafa.2010.21.205.

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6

Dang, Anh Tuan, Thanh Tung Vo, Van Chuong Truong, and Van Hong Le. "Influence of sintering temperature on structure, microstructure and piezoelectric properties of doped BZT–BCT ceramics." International Journal of Modern Physics B 31, no. 02 (January 18, 2017): 1650258. http://dx.doi.org/10.1142/s0217979216502581.

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This work reports the influence of sintering temperature on structure, microstructure and piezoelectric properties of 0.48 Ba(Zr[Formula: see text]Ti[Formula: see text])O3–0.52 (Ba[Formula: see text]Ca[Formula: see text])TiO3(BZT–BCT) doped with ZnO nanoparticle ceramics manufactured by a conventional solid state reaction method. By increasing sintering temperature, the piezoelectric behaviors were improved and rose up to the best parameters at a sintering temperature of 1450[Formula: see text]C ([Formula: see text] pC/N and [Formula: see text]). The corresponding properties of undoped BZT–BCT ceramics were investigated as a comparison. The received results show that the sintering behavior and piezo-parameters of doped BZT–BCT samples are better than the undoped BZT–BCT samples at each sintering temperature.

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7

Patel, Satyanarayan, and Harekrishna Yadav. "Electrical conduction properties of the BZT–BST ceramics." Journal of Advanced Dielectrics 10, no. 06 (December 2020): 2050026. http://dx.doi.org/10.1142/s2010135x20500265.

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0.5Ba([Formula: see text][Formula: see text]O3-0.5([Formula: see text][Formula: see text]TiO3 (BZT–BST) has been explored in recent times for potential applications in energy harvesting, electrocaloric and energy storage. To this end, energy harvesting/conversion and storage applications require an understanding of the conduction and loss mechanisms. The conduction mechanism in BZT–BST ceramics is studied using impedance spectroscopy (IS) at 0.1 Hz−3 MHz and 100−600[Formula: see text]C. Impedance study reveals the presence of two types of relaxation processes due to grain and grain boundary contributions. The relaxation time and dc conductivity activation energies are obtained as 1.12/1.3 eV and 1.05/1.2eV for bulk/grain boundary, respectively, and found that oxygen vacancies dominated electrical behavior. The relaxation mechanism follows non-Debye-type behavior. The high resistance of the grain (bulk) in the ferroelectric region does not contribute to the high losses; the losses probably result from the phase transition. Also, BZT–BST ceramics exhibit a negative temperature coefficient of resistance (NTCR) behaviour. From a practical application point of view in the temperature regime of 25–65[Formula: see text]C, the loss’s contribution is low. The significant contributions of loss result from the response of phase-transition in this temperature range (25–65[Formula: see text]C).

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8

Kulkarni, S. B., S. S. Veer, D. J. Salunkhe, S. R. Kokare, and P. B. Joshi. "Structural and Dielectric Investigations on Bst-Bzt Composites." Material Science Research India 5, no. 1 (June 25, 2008): 183–86. http://dx.doi.org/10.13005/msri/050129.

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9

Puli, Venkata Sreenivas, Dhiren K. Pradhan, Brian C. Riggs, Shiva Adireddy, Ram S. Katiyar, and Douglas B. Chrisey. "Synthesis and characterization of lead-free ternary component BST–BCT–BZT ceramic capacitors." Journal of Advanced Dielectrics 04, no. 02 (April 2014): 1450014. http://dx.doi.org/10.1142/s2010135x14500143.

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Polycrystalline sample of lead-free 1/3( Ba 0.70 Sr 0.30 TiO 3) + 1/3( Ba 0.70 Ca 0.30 TiO 3) + 1/3( BaZr 0.20 Ti 0.80 O 3)( BST - BCT - BZT ) ceramic was synthesized by solid state reaction method. Phase purity and crystal structure of as-synthesized materials was confirmed by X-ray diffraction (XRD). Temperature-dependent dielectric permittivity studies demonstrated frequency-independent behavior, indicating that the studied sample has typical diffuse phase transition behavior with partial thermal hysteresis. A ferroelectric phase transition between cubic and tetragonal phase was noticed near room temperature (~ 330 K). Bulk P–E hysteresis loop showed a saturation polarization of 20.4 μC/cm2 and a coercive field of ~ 12.78 kV/cm at a maximum electric field of ~ 115 kV/cm. High dielectric constant (ε ~ 5773), low dielectric loss (tan δ ~ 0.03) were recorded at room temperature. Discharge energy density of 0.44 J/cm3 and charge energy density of 1.40 J/cm3 were calculated from nonlinear ferroelectric hysteresis loop at maximum electric field. Dielectric constant at variable temperatures and electric fields, ferroelectric to paraelectric phase transition and energy storage properties were thoroughly discussed.

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10

Khien, Nguyen Van. "EFFECT OF Ca CONCENTRATION SUBSTITUTING FOR Ba ON STRUCTURE AND FERROELECTRIC PROPERTIES OF BZT-BCT MATERIAL." Vietnam Journal of Science and Technology 56, no. 1A (May 4, 2018): 86. http://dx.doi.org/10.15625/2525-2518/56/1a/12508.

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In this paper, we report the effect of Ca substitution on the structure and ferroelectric properties of BaZr0.2Ti0.8O3-Ba1-xCaxTiO3 (BZT-BCT). The BZT-BCT samples were synthesized by solid state reaction method. The X-ray results indicate that a phase structure competition appears in the Ca-substituted samples. Based on the hysteresis loops measured by Sawyer – Towermethod, we calculated the Ec and Pr values with the extreme value reaching 29.6 %. The ferroelectric properties of BZT-BCT materialstrongly depend on Ca concentration. The results may be related to a pinning effect concerning with the phase-structured competition in the material.

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11

Swain, Sujata, P. Kumar, and Sonia. "Microstructural, mechanical and electrical properties of BT, BZT-BCT, and BNT-BT-BKT ferroelectrics synthesized by mechanochemical route." Ceramics International 47, no. 18 (September 2021): 26511–18. http://dx.doi.org/10.1016/j.ceramint.2021.06.064.

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12

Chi, Qingguo, Guang Liu, Changhai Zhang, Yang Cui, Xuan Wang, and Qingquan Lei. "Microstructure and dielectric properties of BZT-BCT/PVDF nanocomposites." Results in Physics 8 (March 2018): 391–96. http://dx.doi.org/10.1016/j.rinp.2017.12.052.

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13

Mane, S. S., A. N. Tarale, S. G. Chavan, V. R. Reddy, P. B. Joshi, and D. J. Salunkhe. "Magnetoelectric and magnetodielectric properties of LSMO–(BCT–BZT) composites." Indian Journal of Physics 90, no. 5 (August 23, 2015): 519–28. http://dx.doi.org/10.1007/s12648-015-0755-z.

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14

ZHU, J., W. J. JIE, X. H. WEI, W. F. QIN, Y. ZHANG, and Y. R. LI. "ENHANCED DIELECTRIC CHARACTERISTICS OF MANGANESE-DOPED BZT THIN FILMS." Surface Review and Letters 15, no. 01n02 (February 2008): 29–33. http://dx.doi.org/10.1142/s0218625x08010907.

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Ba ( Zr 0.2 Ti 0.8) O 3 (BZT) and 2 mol% Mn additional doped BZT ( Mn -BZT) thin films were deposited by pulsed laser deposition technique under the same growth conditions on LaAlO 3 substrates with the bottom electrodes of LaNiO 3. The microstructure of the films was characterized by X-ray diffraction (XRD) in the mode of θ–2θ scan and Φ-scan. The results indicated that BZT film was (001)-oriented_with an in-plane relationship of BZT[100]//LNO[100]//LAO[100]. The Mn -BZT film exhibited higher dielectric constant of 225 at zero electric field, larger dielectric tunability of 59.4%, and lower dielectric loss of 1.8% under an applied electric field of 720 kV/cm. The figure of merit for BZT thin film increased from 19.8 to 33 by Mn doping. The enhanced dielectric behavior by Mn doping could be mainly attributed to the decrease of oxygen vacancies and the reorientation of the dipolar defect complex of [Formula: see text].

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15

Tian, Yongshang, Yansheng Gong, Dawei Meng, Hao Deng, and Boya Kuang. "Low-temperature sintering and electric properties of BCT–BZT and BCZT lead-free ceramics." Journal of Materials Science: Materials in Electronics 26, no. 6 (March 7, 2015): 3750–56. http://dx.doi.org/10.1007/s10854-015-2898-2.

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16

Adnan, Septian Rahmat. "Analisa Rietvield Pada Material Barium Zirkonium Titanat (BZT)." JURNAL KAJIAN TEKNIK MESIN 5, no. 1 (April 13, 2020): 1–3. http://dx.doi.org/10.52447/jktm.v5i1.1870.

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Pada penelitian ini dilakukan proses Rietvield refinement pada material Barium Zirkonium Titanat (BZT) yang ditumbuhkan pada substrat Silikon (Si) untuk mengetahui sruktur kristal BZT. Dari hasil kurva XRD yang dicocokan dengan data base COD didapatkan bidang kristal yang muncul adalah (110), (101), (111), dan (200) .Hasil refinement kurva XRD menunjukan menunjukan struktur kristal BZT adalah Tetragonal dengan parameter kisi c/a : 1,01. Kurva error antara kurva hasil eksperimen XRD dan hasil refinement menunjukan perbedaan yang sangat kecil serta hasil chi – squared menunjukan tren linier. Dari hasil tersebut dapat dinyatakan bahwa lapisan BZT telat berhasil tumbuh pada substrat Silikon (Si)

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17

Yan, Xiaodong, Mupeng Zheng, Xin Gao, Mankang Zhu, and Yudong Hou. "High-performance lead-free ferroelectric BZT–BCT and its application in energy fields." Journal of Materials Chemistry C 8, no. 39 (2020): 13530–56. http://dx.doi.org/10.1039/d0tc03461d.

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18

Adnan, Septian Rahmat, and Bambang Soegijono. "Sifat Termal dan Analisis Komposisi Material Barium Zirkonium Titanat (BZT) dengan Doping Lantanum dan Indium." JURNAL KAJIAN TEKNIK MESIN 5, no. 2 (September 6, 2020): 78–82. http://dx.doi.org/10.52447/jktm.v5i2.3463.

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Material Barium Zirkonium Titantat (BZT) dibuat menggunakan metode sol gel yang dilanjutkan dengan Spin Coating pada substrat Silikon. Untuk mendapatkan material Barium Zirkonium Titantat (BZT)dalam bentuk serbuk dilakukan pemanasan menggunakan hotplate pada suhu 90oC hingga larutan BZT berubah menjadi serbuk. Selanjutnya untuk menumbuhkan lapisan BZT pada substrat, dilakukan metode spin coating yang dilanjutkan proses pyrolisi. Selanjutnya substrat yang telah dilapisi larutan BZT dipanaskan pada suhu 800oC selama 3 jam. Untuk mengetahui sifat termal dan kristalisasi pada BZT dilakukan Uji DTA/TGA. Pengujian EDAX dilakukan untuk mengetahui komposisi lapisan BZT yang telah terdeposisi pada substrat. Dari hasil uji DTA/TGA terlihat bahwa proses kristalisasi BZT mulai terjadi pada suhu 400oC dan proses endotermik dari BZT terjadi pada suhu 463oC. Hasil uji EDAX komposisi unsur Barium, Titanium, serta doping Lantanum dan Indium telah terdeposisi pada subtrat silikon, serta dari hasil tersebut dapat disumpulkan kristal BZT dengan doping La dan In telah berhasil di deposisi dan ditumbuhkan pada substrat Si.

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19

Lee, Seung-Hwan, Sang-Don Baek, Dong-Hyun Lee, Sung-Gap Lee, and Young-Hie Lee. "Piezoelectric Properties of NKN-BZT Ceramics Sintered with CuO and ZnO Additives." Journal of the Korean Institute of Electrical and Electronic Material Engineers 24, no. 8 (August 1, 2011): 636–40. http://dx.doi.org/10.4313/jkem.2011.24.8.636.

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20

Li, Binzhi, John E. Blendell, and Keith J. Bowman. "Temperature-Dependent Poling Behavior of Lead-free BZT-BCT Piezoelectrics." Journal of the American Ceramic Society 94, no. 10 (August 2, 2011): 3192–94. http://dx.doi.org/10.1111/j.1551-2916.2011.04758.x.

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21

Bandyopadhyay, Soumya, Tushar Jogi, Kumaraswamy Miriyala, Ranjith Ramadurai, and Saswata Bhattacharyya. "A phase-field study of domain dynamics in ferroelectric BCT-BZT system." MRS Advances 1, no. 40 (2016): 2783–88. http://dx.doi.org/10.1557/adv.2016.384.

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ABSTRACTWe present a thermodynamically consistent phase-field model describing the free energy of perovskite-based BCT-BZT solid solution containing an intermediate morphotropic phase boundaries. The Landau coefficients are derived as functions of composition of zirconium. The electrostrictive and elastic constants are appropriately chosen from experimental findings. The resulting Landau free energy is constructed to describe the stable polarization states as a function of composition. The evolution of the polarization order parameters at a particular composition is described by a set of time-dependent Ginzburg-Landau (TDGL) equations. Additionally, we solve Poisson’s equation and mechanical equilibrium equation to account for the ferroelectric/ferroelastic interactions. We have performed two dimensional and three-dimensional simulations with appropriate electrical boundary conditions to study the effect of external electric field on domain dynamics in BCT-BZT system at the equimolar composition.

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22

Li, Binzhi, Matthias C. Ehmke, John E. Blendell, and Keith J. Bowman. "Optimizing electrical poling for tetragonal, lead-free BZT–BCT piezoceramic alloys." Journal of the European Ceramic Society 33, no. 15-16 (December 2013): 3037–44. http://dx.doi.org/10.1016/j.jeurceramsoc.2013.05.032.

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23

Hayati, Raziye, Mohammad Fayazi, Hadi Diargar, Mohammad Kaveh, and Lobat Tayebi. "Electrical and mechanical properties of BZT − x BCT lead‐free piezoceramics." International Journal of Applied Ceramic Technology 17, no. 4 (March 9, 2020): 1891–98. http://dx.doi.org/10.1111/ijac.13494.

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24

Mishra, P., Sonia, and P. Kumar. "Enhanced dielectric and piezoelectric properties of BZT–BCT system near MPB." Ceramics International 40, no. 9 (November 2014): 14149–57. http://dx.doi.org/10.1016/j.ceramint.2014.06.001.

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25

Praveen, J. Paul, Kranti Kumar, A. R. James, T. Karthik, Saket Asthana, and Dibakar Das. "Large piezoelectric strain observed in sol–gel derived BZT–BCT ceramics." Current Applied Physics 14, no. 3 (March 2014): 396–402. http://dx.doi.org/10.1016/j.cap.2013.12.026.

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26

Mishra, P., and P. Kumar. "Structural, dielectric and optical properties of [(BZT–BCT)-(epoxy-CCTO)] composites." Ceramics International 41, no. 2 (March 2015): 2727–34. http://dx.doi.org/10.1016/j.ceramint.2014.10.087.

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27

Baloria, Himani, Dipika Nanda, Shweta Thakur, Radheshyam Rai, and Anupinder Singh. "Structural, dielectric and impedance response of BCT reinforcement on BZT matrix." Journal of Materials Science: Materials in Electronics 32, no. 14 (July 2021): 19688–702. http://dx.doi.org/10.1007/s10854-021-06491-4.

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28

Sumang, Rattiphorn, Theerachai Bongkarn, Nitish Kumar, and Manlika Kamnoy. "Investigation of a new lead-free (1- x - y )BNT- x BKT- y BZT piezoelectric ceramics." Ceramics International 43 (August 2017): S102—S109. http://dx.doi.org/10.1016/j.ceramint.2017.05.239.

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29

Frattini, A., A. Di Loreto, and O. De Sanctis. "Parameter Optimization in the Synthesis of BZT Ceramics to Achieve Good Dielectric Properties." Journal of Materials 2013 (April 9, 2013): 1–6. http://dx.doi.org/10.1155/2013/393017.

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The powder synthesis of barium zirconate titanate (BZT) (BaZrTiO3) from the mechanochemical activation of BaCO3, ZrO2, and TiO2 was studied. The grinding effect, by using a planetary ball milling, on the crystallization temperature of BZT powders was analyzed. X-ray diffractometry, differential thermal analysis, thermogravimetric analysis, and scanning electronic microscopy (SEM) were used as characterization methods. The crystallization behavior of powders activated by high-energy grinding and the effect of grinding time on the BZT crystallization were analyzed. After grinding by 4 h, the BaZr(0.05)Ti(0.95)O3 sample was almost fully crystallized at . The results of dielectric and ferroelectric properties show that high-energy ball milling is a practical and promising way to prepare BZT ceramics.

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30

Jaafar, Hidayani. "Effect of CaO on Barium Zinc Tantalate (BZT) Dielectric Properties." Advanced Materials Research 845 (December 2013): 446–50. http://dx.doi.org/10.4028/www.scientific.net/amr.845.446.

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The effect of CaO on microstructure and dielectric properties of Ba (Zn1/3Ta2/3)O3(BZT) ceramics was investigated. The addition of CaO disturbed the 1:2 ordering to 1:1 ordering structure of BZT ceramic. The average grain size significantly increased with the addition of CaO and formed a more compacted structure. The relative density increased with the addition of a small amount of CaO, but it decreased when the CaO content was increased. The dielectric constant (ɛr) value of the BZT significantly improved with the addition of the CaO for the specimens sintered at 1250°C and it could be explained by the increased of the relative density. However, for the specimens sintered at 1300°C, the dielectric constant value decreased with the addition of CaO which is attributed to the decrease of the relative density. The tan δ of the CaO doped with BZT ceramics is lower than pure BZT ceramics, and decreases as the CaO content increases. Meanwhile, for the percentage of bandwidth (%BW) it is shown that the best result is when it is doped with 0.5 mol% CaO and sintered at 1250°C. The best microwave dielectric properties obtained are ɛr=70.44, tan δ = 0.025 which occur for the 0.5 mol% doped CaO and when sintered at 1250°C/4 h.

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31

Jaafar, Hidayani, Sitti Fatimah Mhd Ramle, Muhammad Azwadi Sulaiman, and Nurul Nadia Aminuddin. "Influence of CaO and CuO on Barium Zinc Tantalate (BZT) Dielectric Properties." Journal of Tropical Resources and Sustainable Science (JTRSS) 3, no. 3 (June 15, 2015): 30–34. http://dx.doi.org/10.47253/jtrss.v3i3.531.

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The structure and dielectric properties of Barium Zinc Tantalate (BZT) doped by copper oxide (CuO) and calcium oxide (CaO) with a variety of values of mol% doping from 0, 0.1, 0.25, 0.5, 1.0, 1.5 and 2.5 were prepared using a solid state method. A small amount of doping elements increased the relative density. The dielectric constant (?r) value of the BZT significantly improved with the addition of the CuO and CaO for the specimens sintered at 1250°C and it could be explained by the increase of the relative density. The tan ? of the CuO and CaO doped with BZT ceramics is lower than pure BZT ceramics, and decreases as the CuO and CaO content increases. Minimum return loss (dB) shown that the best results are produced when it is doped with 0.25 mol% CaO and 0.5 mol% for CuO sintered at 1250°C.

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32

Surendran, Kuzhichalil Peethambaran, and Mailadil Thomas Sebastian. "Low Loss Dielectrics in Ba[(Mg1/3Ta2/3)1−xTix]O3 and Ba[(Mg1−xZnx)1/3Ta2/3]O3 Systems." Journal of Materials Research 20, no. 11 (November 2005): 2919–26. http://dx.doi.org/10.1557/jmr.2005.0384.

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The microwave dielectric properties of ceramics based on Ba[(Mg1/3Ta2/3)1−xTix]O3 (BMT-BT) and Ba[(Mg1−xZnx)1/3Ta2/3]O3 (BMT-BZT) were investigated as a function of composition x. In BMT-BT solid solution, the dielectric properties deteriorated with increasing concentration of Ti substitution at the B-site of BMT. A correlation was established between the quality factors of the solid solution phases and their tolerance factor. In BMT-BZT solid solution, where both the end compounds are ordered perovskites, the unit cell expands with increasing mole fraction of the Zn in Mg site of BMT while the dielectric constant increases monotonously from 24.8 (for BMT) to 29.7 (BZT). In BMT-BZT solid solution, the quality factor reaches a maximum (Qu·f = 109,900 GHz) for 60 mol/ of BZT.

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33

Jaafar, Hidayani, Zainal Arifin Ahmad, and Mohd Fadzil Ain. "Effect of Sintering Temperature on CuO Doped Barium Zinc Tantalate (BZT) Dielectric Properties." Materials Science Forum 840 (January 2016): 8–13. http://dx.doi.org/10.4028/www.scientific.net/msf.840.8.

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The structure and dielectric properties of Barium Zinc Tantalate (BZT) doped by copper oxide (CuO) with a variety of values of mol% doping from 0, 0.1, 0.25, 1.0, 1.5 and 2.5 were prepared using a solid state method. The addition of CuO did not disturb the 1:2 ordering structure of the BZT ceramic. The grain size increased when the addition of doping increased. A small amount of doping elements increased the relative density. The dielectric constant (ɛr) value of the BZT significantly improved with the addition of the CuO for the specimens sintered at 1250°C and it could be explained by the increase of the relative density. The tan δ of the CuO doped with BZT ceramics is lower than pure BZT ceramics, and decreases as the CuO content increases. Meanwhile, for the percentage of bandwidth (%BW) it is shown that the best result is produced when it is doped with 0.25 mol% CuO and sintered at 1250°C. The best microwave dielectric properties obtained were ɛr=70.28, tan δ = 0.024, %BW = 7.83 which occurred for the 0.25 mol% doped CuO and when sintered at 1250°C/4 h.

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34

Sumang, R., W. Buasri, N. Kumar, and T. Bongkarn. "Influence of sintering temperature on crystal structure, microstructure and electrical properties of BNT-BKT-BZT piezoelectric ceramic." Integrated Ferroelectrics 187, no. 1 (February 12, 2018): 181–93. http://dx.doi.org/10.1080/10584587.2018.1445347.

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35

Maimon, H., Sukum Eitssayeam, Uraiwan Intatha, Tawee Tunkasiri, and G. Satittada. "Phase Evolution and Physical Properties of (1-x)BZT-xBFN Ceramic System." Advanced Materials Research 55-57 (August 2008): 53–56. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.53.

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Phase evolution and physical properties of (1-x)BZT–xBFN ceramic system were investigated to find the optimum condition for electronic applications. (1-x)BZT–xBFN powders were prepared by solid state reaction technique varying x from 0.2 to 0.8 and various sintering temperatures from 1350 °C to 1450 °C. Phase formation was investigated by X-ray diffraction technique. The XRD analysis demonstrated that with increasing BFN content in (1−x)BZT–xBFN, the structural change occurred from the tetragonal to the cubic phase at room temperature. Changes in the physical and mechanical properties were then related to this structural transformation depending on the BFN content.

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36

Bai, Wang Feng, Wei Li, Bo Shen, and Ji Wei Zhai. "Piezoelectric and Strain Properties of Strontium-Doped BZT-BCT Lead-Free Ceramics." Key Engineering Materials 512-515 (June 2012): 1385–89. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.1385.

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Lead-free piezoelectric ceramics, (Ba0.85-xSrxCa0.15)(Zr0.1Ti0.9)O3 (BSCZT, x=0.01-0.07), were prepared via a solid-state reaction route. The dielectric properties, ferroelectric properties, piezoelectric and strain properties of BSCZT ceramics were studied. The phase structure and microstructure were investigated by X-ray diffraction and scanning electron microscope, respectively. Results showed that dense ceramics with pure perovskite phase were obtained. At room temperature, the samples with x=0.03 exhibited excellent properties with large piezoelectric coefficient d33=534pC/N, planar mode electromechanical coupling coefficient kp=47.7%, thickness mode electromechanical coupling coefficient kt= 42% and high strain levels of 0.34%. In addition, the study of electrical properties suggested that the Curie temperature decreased linearly from 92oc to 73oc with the increasing doping content of strontium in BCZT ceramics. The remnant polarizations, piezoelectric coefficient and strain levels were all increased as the Sr content increased and then decreased with further increased Sr doping level, giving the maximum values at the Sr content of 3mol%. These results indicated that the BSCZT system is a promising lead-free material for applications in the future.

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37

Chi, Qingguo, Zhiyou Gao, Changhai Zhang, Tiandong Zhang, Yang Cui, Xuan Wang, and Qingquan Lei. "Microstructures and energy storage property of sandwiched BZT-BCT@Fe3O4/polyimide composites." Journal of Materials Science: Materials in Electronics 30, no. 1 (October 26, 2018): 1–8. http://dx.doi.org/10.1007/s10854-018-0280-x.

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38

Thanachayanont, Chanchana, Visittapong Yordsri, Suphakan Kijamnajsuk, Nawal Binhayeeniyi, and Nantakan Muensit. "Microstructural investigation of sol–gel BZT powders." Materials Letters 82 (September 2012): 205–7. http://dx.doi.org/10.1016/j.matlet.2012.05.075.

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39

Гущина, Е. В., Б. Р. Бородин, В. А. Шаров, В. В. Осипов, С. И. Павлов, М. А. Яговкина, and М. С. Дунаевский. "Исследования проводящих и сегнетоэлектрических свойств BZT-пленок." Журнал технической физики 90, no. 12 (2020): 2159. http://dx.doi.org/10.21883/jtf.2020.12.50137.52-20.

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The local polarization processes in thin BaTi1-xZrxO3 films were investigated by contact conducting scanning probe microscopy and piezoresponse microscopy. A relationship between the direction of the created domains and the magnitude of the flowing currents is established. The value of the residual polarization is found, and the hysteresis loop is measured using scanning probe microscopy as well as the values of the piezomodule dzz and the value of the coercive field Ec for these films are determined.

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40

Kumar, Parveen, Sangeeta Singh, J. K. Juneja, K. K. Raina, and Chandra Prakash. "Dielectric behaviour of Pb-substituted BZT ceramics." Bulletin of Materials Science 34, no. 7 (December 2011): 1401–5. http://dx.doi.org/10.1007/s12034-011-0335-6.

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41

Khare, Ayush, B. Nag Bhargavi, Namrata Chauhan, and Nameeta Brahme. "Thermo and mechanoluminescence studies of BZT phosphor." Optik 125, no. 17 (September 2014): 4655–58. http://dx.doi.org/10.1016/j.ijleo.2014.04.091.

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42

Lertcumfu, Narumon, Kamonpan Pengpat, Sukum Eitssayeam, Tawee Tunkasiri, and Gobwute Rujijanagul. "Electrical properties of BZT/mullite ceramic composites." Ceramics International 41 (July 2015): S447—S452. http://dx.doi.org/10.1016/j.ceramint.2015.03.191.

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43

Dangsak, Jiraporn, Sukum Eitssayeam, Denis Russell Sweatman, and Uraiwan Intatha. "Phase Formation and Grain Growth of BSCZT Ceramics Prepared by BST-BZT Seed Induced Method." Key Engineering Materials 766 (April 2018): 175–79. http://dx.doi.org/10.4028/www.scientific.net/kem.766.175.

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In this work, lead-free Ba0.4Sr0.4Ca0.2Zr0.05Ti0.95O3 ceramics were prepared by the seed induced method using (0.5Ba0.6Sr0.4TiO3–0.5BaZr0.05Ti0.95O3) (BST-BZT) seed. Seed crystals with concentrations of 0, 2.5, 5, 7.5, 10 mol% were mixed with BSCZT powder for 24 h and sintered at 1400 °C for 4 h. The phase formation and microstructure of BSCZT ceramic were characterized by X-ray diffraction technique (XRD) and the scanning electron microscopy (SEM). All samples showed a single phase perovskite structure without impurities and exhibited the existence of the tetragonal phase. The density values of the ceramics decreased from 4.90 to 4.75 g/cm3 with increasing seed crystal concentrations. The grain size of the sample without seed was 3.71 μm, whereas a grain size of 8.99 μm was observed for the sample with 10 mol% seed crystal. The dielectric constant at room temperature at 1 kHz was 1831 for the sample with 10 mol% seed crystal while the dielectric constant of the sample without seed was 1484. From the results in this work, BST-BZT seed can increase grain size and improve the dielectric constant at room temperature.

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44

WANG, CHUN-WEI, and ZVI RUSAK. "Numerical studies of transonic BZT gas flows around thin airfoils." Journal of Fluid Mechanics 396 (October 10, 1999): 109–41. http://dx.doi.org/10.1017/s0022112099005893.

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Numerical studies of two-dimensional, transonic flows of dense gases of retrograde type, known as BZT gases, around thin airfoils are presented. The computations are guided by a recent asymptotic theory of Rusak & Wang (1997). It provides a uniformly valid solution of the flow around the entire airfoil surface which is composed of outer and inner solutions. A new transonic small-disturbance (TSD) equation solver is developed to compute the nonlinear BZT gas flow in the outer region around most of the airfoil. The flow in the inner region near the nose of the airfoil is computed by solving the problem of a sonic flow around a parabola. Numerical results of the composite solutions calculated from the asymptotic formula are compared with the solutions of the Euler equations. The comparison demonstrates that, in the leading order, the TSD solutions of BZT gas flows represent the essence of the flow character around the airfoil as computed from the Euler equations. Furthermore, guided by the asymptotic formula, the computational results demonstrate the similarity rules for transonic flows of BZT gases. There are differences between the self-similar cases that may be related to the error associated with the accuracy of the asymptotic solution. A discussion on the flow patterns around an airfoil at transonic speeds and at various upstream thermodynamic conditions is also presented. The paper provides important guidelines for future studies on this subject.

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45

Abhinay, S., P. Dixit, and R. Mazumder. "Effect of pore former sucrose on microstructure and electrical properties of porous BZT-0.5BCT ceramics." Ferroelectrics 557, no. 1 (March 11, 2020): 18–27. http://dx.doi.org/10.1080/00150193.2020.1713359.

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The present paper aims to study the effect of different pore forming agent on the density, porosity, pore morphology and electrical properties of porous BZT-0.5BCT ceramics. The electrical property evaluation is focused on dielectric constant, ferroelectric properties (P-E loop) and piezoelectric constant (d33 and g33) of the porous BZT-0.5BCT ceramics. BZT-0.5BCT powder was prepared by solid-state route. The porous ceramic was prepared by mixing BZT-0.5BCT with different percentage (10, 20, 30, 40 and 50 vol%) of polyvinyl alcohol (PVA) and sucrose as pore-forming agents (PFA). As a result, density, relative permittivity, remanent polarization and piezoelectric constant decreased linearly with increase in pore former addition. The pores derived from PVA and sucrose as pore former were spherical to irregular in shape. Isolated pores are observed up to 30 vol% of PFA addition and pore interconnectivity is observed at 40 vol% of PVA and sucrose addition. The decrease in electrical properties is much higher in sucrose when compared with PVA as a pore former.

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46

Voigts, Michael, Wolfgang Menesklou, and Ellen Ivers-Tiffee. "Dielectric properties and tunability of BST and BZT thick films for microwave applications." Integrated Ferroelectrics 39, no. 1-4 (January 2001): 383–92. http://dx.doi.org/10.1080/10584580108011962.

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47

Utara, Songkot, and Sitchai Hunpratub. "Effect of BCT-BZT ceramic loading on dielectric properties of natural rubber composites." Integrated Ferroelectrics 192, no. 1 (September 2, 2018): 130–40. http://dx.doi.org/10.1080/10584587.2018.1521661.

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48

Wei, Gui, Zengmei Wang, Ruijian Zhu, and Hideo Kimura. "PVDF/BCT-BZT Nanocomposite Film for a Piezo-Driven Self-Charging Power Cell." Journal of The Electrochemical Society 165, no. 7 (2018): A1238—A1246. http://dx.doi.org/10.1149/2.0401807jes.

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49

Patra, Aniket, Abhishek Sasmal, Anshuman Seal, and Shrabanee Sen. "Enhanced dielectric, ferroelectrics and piezoelectric behavior of tape casted BCT–BZT piezoelectric wafer." Journal of Materials Science: Materials in Electronics 29, no. 16 (July 5, 2018): 14046–54. http://dx.doi.org/10.1007/s10854-018-9536-8.

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50

Choi, Won Seok, Young Park, Jin Hyo Boo, Junsin Yi, and Byung You Hong. "Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method." Key Engineering Materials 321-323 (October 2006): 1336–39. http://dx.doi.org/10.4028/www.scientific.net/kem.321-323.1336.

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We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O2 ratios (5:1, 2:1, and 1:1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.

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