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Journal articles on the topic 'C49'

Author: Grafiati

Published: 4 June 2021

Last updated: 18 February 2022

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1

ZHANG, ZHIBIN, SHILI ZHANG, DEZHANG ZHU, HONGJIE XU, and YI CHEN. "FORMATION OF C54 TiSi2 ON Si(100) USING Ti/Mo AND Mo/Ti BILAYERS." International Journal of Modern Physics B 16, no. 01n02 (2002): 205–12. http://dx.doi.org/10.1142/s0217979202009652.

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The effect of Mo on the formation of C54 TiSi 2 on Si (100) substrates is studied using cross-section transmission electron microscopy. For a Ti/Mo bilayer on Si, the interfacial Mo film reacts with Ti and Si to form C40 (Mo,Ti)Si 2 at 550°C. Crystal grains of metastable C40 TiSi 2 and equilibrium C54 TiSi 2 are found in the region near the interfacial (Mo,Ti)Si 2 layer due to the template phenomenon. Increasing the temperature to 600°C leads to the growth of C54 TiSi 2 throughout the film. No C49 grains can be detected. The findings confirm that the usual sequence for the formation of C54 TiS

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2

Harmati, Attila. "Adatbányászat üzleti szemmel II. rész." Competitio 9, no. 1 (2010): 108–30. http://dx.doi.org/10.21845/comp/2010/1/6.

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A cikk az adatbányászat technológiájának gyakorlati alkalmazását szemlélteti egy – a szerző által készített – adatbányászati projekt bemutatása révén. Az esettanulmány elkészítésének célja egy osztályozásimodell kialakítása volt logisztikus regressziós modellek, döntési fa és neurális háló felhasználásával. A megfelelő eljárás megtalálásával az adatállományt nyújtó vállalat egy jövőbeli direktmarketing-akcióhozkapcsolódóan tudatosan jelölheti ki azon ügyfelek körét, akik egy személyes levélre nagy valószínűséggel kedvezően reagálnának. A potenciálisan kedvező ügyfelek ezáltal hatékonyabban érh

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3

La Via, F., F. Mammoliti, and M. G. Grimaldi. "C49 defect influence on the C49–C54 transition." Microelectronic Engineering 70, no. 2-4 (2003): 215–19. http://dx.doi.org/10.1016/s0167-9317(03)00462-3.

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4

Wang, Shuanglun, Yong Pan, Yuanpeng Wu, and Yuanhua Lin. "Insight into the electronic and thermodynamic properties of NbSi2 from first-principles calculations." RSC Advances 8, no. 50 (2018): 28693–99. http://dx.doi.org/10.1039/c8ra04959a.

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5

Wang, Ming-Jun, Wen-Tai Lin, and F. M. Pan. "Effects of an interposed Cu layer on the enhanced thermal stability of C49 TiSi2." Journal of Materials Research 17, no. 2 (2002): 343–47. http://dx.doi.org/10.1557/jmr.2002.0048.

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The effects of an interposed Cu layer and a surface Cu layer on the C49–C54 TiSi2 transformation temperature were studied. For the Ti/Cu/(100)Si samples the interposed Cu layer significantly enhanced the thermal stability of C49 TiSi2. The temperature for complete C49–C54 TiSi2 transformation was raised from 710 to 735 to 750 °C with the thickness of the interposed Cu layer increasing from 0 to 1.5 to 3.5 nm, correspondingly. Cu was insoluble in C54 TiSi2. For the Cu/Ti/(100)Si samples, the surface Cu layer did not at all enhance the thermal stability of the C49 phase. In the present study, th

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6

Cabral, C., L. A. Clevenger, J. M. E. Harper, et al. "Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer." Journal of Materials Research 12, no. 2 (1997): 304–7. http://dx.doi.org/10.1557/jmr.1997.0040.

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We demonstrate that the formation temperature of the C54 TiSi2 phase from the bilayer reaction of Ti on Si is lowered by approximately 100 °C by placing an interfacial layer of Mo or W between Ti and Si. Upon annealing above 500 °C, the C49 TiSi2 phase forms first, as in the reaction of Ti directly on Si. However, the temperature range over which the C49 phase is stable is decreased by approximately 100 °C, allowing C54 TiSi2 formation below 700 °C. Patterned submicron lines (0.25−1.0 μm wide) fabricated without the Mo layer contain only the C49 TiSi2 phase after annealing to 700 °C for 30 s.

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7

Zhang, Z.-B., S.-L. Zhang, D.-Z. Zhu, H.-J. Xu, and Y. Chen. "Different routes to the formation of C54 TiSi2 in the presence of surface and interface molybdenum: A transmission electron microscopy study." Journal of Materials Research 17, no. 4 (2002): 784–89. http://dx.doi.org/10.1557/jmr.2002.0115.

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Direct evidence revealing fundamental differences in sequence of phase formation during the growth of TiSi2 in the presence of an ultrathin surface or interface Mo layer is presented. Results of cross-sectional transmission electron microscopy showed that when the Mo layer was present at the interface between Ti films and Si substrates, C40 (Mo,Ti)Si2 formed at the interface, and Ti5Si3 grew on top after annealing at 550 °C. Additionally, both C54 and C40 TiSi2 were found in the close vicinity of the C40 (Mo,Ti)Si2 grains. No C49 grains were detected. Raising the annealing temperature to 600 °

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8

Ikeda, Kazuto, Hirofumi Tomita, Satoshi Komiya, and Tomoji Nakamura. "C49-TiSi2 epitaxial orientation dependence of C49-to-C54 phase transformation rate." Thin Solid Films 330, no. 2 (1998): 206–10. http://dx.doi.org/10.1016/s0040-6090(98)00801-3.

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9

ZHANG, LIN, YONG KEUN LEE, and HUN SUB PARK. "FORMATION ENHANCEMENT OF THE C54-TiSi2 BY A MULTI-CYCLE PRE-COOLING TREATMENT." International Journal of Modern Physics B 16, no. 01n02 (2002): 213–18. http://dx.doi.org/10.1142/s0217979202009664.

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This work investigated effects of different processing methods on the transformation of the C49-TiSi 2 phase to the C54-TiSi 2 phase in 20nm IMP Ti/Si thin films. A multi-cycle pre-cooling treatment was added to the titanium silicidation process sequence before the rapid thermal annealing (RTA) step. Compared with the conventional process, this new processing method was found to enhance formation of the low-resistivity C54-TiSi 2 phase. The extent to which the C49 transformed to the C54 phase at 720°C was observed to increase with the number of the pre-cooling cycle. The kinetic mechanisms of

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10

Carlsson, A. E., and P. J. Meschter. "Energetics of C11b, C40, C54, and C49 structures in transition-metal disilicides." Journal of Materials Research 6, no. 7 (1991): 1512–17. http://dx.doi.org/10.1557/jmr.1991.1512.

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The relative energies of the related C11b, C40, and C54 crystal structures of group IV–VII transition-metal disilicides are obtained by ab initio self-consistent band-structure calculations using the augmented-spherical-wave (ASW) method. The structural energy differences among these three structures correlate strongly with d-band filling, with C40 being stabilized relative to C54 and C11b relative to C40 as the transition-metal d-electron count increases. The C40/C11b energy difference is <0.05 eV/atom only for CrSi2 and MoSi2. Relative C11b/C40/C54 energies are similar in magnitude to tho

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11

Pico, C. A., and M. G. Lagally. "Angular correlation between grains of metastable TiSi2." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 888–89. http://dx.doi.org/10.1017/s0424820100106508.

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TiSi2 is the primary silicide candidate as interconnect material in very largy scale integrated (VLSI) devices because of its low resistivity (15μΩ-cm) and relatively low processing temperature. While formation of TiSi2 from Ti-on-Si reaction couples can be accomplished easily and quickly at anneal temperatures above 550°C, below ∽650°C TiSi2 forms in the metastable C49 (base-centered orthorhombic; a=3.62Å, b=13.76Å, and c=3.605Å) 12-atom-per-unit-cell crystal structure with a characteristic resistivity of 65μΩ-cm. To achieve the low-resistivity C54 (face-centered orthorhombic; a=8.24Å, b=4.78

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12

WANG, TAO, JI-AN CHEN, XING LING, YONG-BING DAI, and QING-YUAN DAI. "PSEUDOPOTENTIAL INVESTIGATION OF ELECTRONIC PROPERTIES OF C54- AND C49-TiSi2." Modern Physics Letters B 20, no. 07 (2006): 343–51. http://dx.doi.org/10.1142/s0217984906010639.

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The letter casts some light on the structural, elastic and electronic properties of C49- and C54-TiSi 2, using an ab initio plane-wave ultrasoft pseudopotential method based on generalized gradient approximation (GGA). An intrinsic advantage in the growth stage for C49 phase might explain its kinetically favored phenomena in a solid-state reaction.

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13

Clevenger, L. A., R. A. Roy, C. Cabral, et al. "A comparison of C54-TiSi2 formation in blanket and submicron gate structures using in situ x-ray diffraction during rapid thermal annealing." Journal of Materials Research 10, no. 9 (1995): 2355–59. http://dx.doi.org/10.1557/jmr.1995.2355.

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We demonstrate the use of a synchrotron radiation source for in situ x-ray diffraction analysis during rapid thermal annealing (RTA) of 0.35 μm Salicide (self-aligned silicide) and 0.4 μm Polycide (silicided polysilicon) TiSi2 Complementary Metal Oxide Semiconductor (CMOS) gate structures. It is shown that the transformation from the C49 to C54 phase of TiSi2 occurs at higher temperatures in submicron gate structures than in unpatterned blanket films. In addition, the C54 that forms in submicron structures is (040) oriented, while the C54 that forms in unpatterned Salicide films is randomly or

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14

Mammoliti, F., M. G. Grimaldi, and F. La Via. "Electrical resistivity and Hall coefficient of C49, C40, and C54 TiSi2 thin-film phases." Journal of Applied Physics 92, no. 6 (2002): 3147–51. http://dx.doi.org/10.1063/1.1500787.

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15

Nemanich, R. J., Hyeongtag Jeon, J. W. Honeycutt, C. A. Sukow, and G. A. Rozgonyi. "Interface structure of epitaxial TiSi2 on Si(lll)." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1354–55. http://dx.doi.org/10.1017/s0424820100131401.

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Among the transition metal silicides, TiSi2 is considered to be a reasonable choice for VLSI applications because it exhibits low resistivity, high temperature stability and compatibility with current processing steps. Thin film reaction of Ti on Si results in the formation of two different forms of TiSi2 which have been identified as the C49 and the C54 crystal structures. The structures are base centered and face centered orthorhombic, respectively. The C49 phase is metastable (ie. it is not represented in the binary phase diagram), and forms at temperatures of 450 to 600°C. The stable C54 p

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16

De Avillez, R. R., L. A. Clevenger, C. V. Thompson, and K. N. Tu. "Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions." Journal of Materials Research 5, no. 3 (1990): 593–600. http://dx.doi.org/10.1557/jmr.1990.0593.

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Growth of amorphous-titanium-silicidc and crystalline C49 TiSi2 in titanium/amorphous-silicon multilayer films was investigated using a combination of differential scanning calorimetry (DSC), thin film x-ray diffraction, Auger depth profiling, and cross-sectional transmission electron microscopy. The multilayer films had an atomic concentration ratio of 1Ti to 2Si and a modulation period of 30 nm. In the as-deposited condition, a thin amorphous-titanium-silicide layer was found to exist between the titanium and silicon layers. Heating the multilayer film from room temperature to 700 K caused t

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17

Ottaviani, G., R. Tonini, D. Giubertoni, et al. "Investigation of C49–C54 TiSi2 transformation kinetics." Microelectronic Engineering 50, no. 1-4 (2000): 153–58. http://dx.doi.org/10.1016/s0167-9317(99)00276-2.

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18

Fabiano, Sabrina, Paolo Contiero, Giulio Barigelletti, et al. "Epidemiology of Soft Tissue Sarcoma and Bone Sarcoma inItaly: Analysis of Data from 15 Population-Based Cancer Registries." Sarcoma 2020 (September 1, 2020): 1–10. http://dx.doi.org/10.1155/2020/6142613.

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Sarcomas are a heterogeneous group of rare cancers of mesenchymal origin. In this study, we provide updated, world age-standardised incidence rate (ASR) and European age-standardised incidence rate for malignant soft tissue sarcoma (ICD-O-3 topographic code C47–C49) and bone sarcoma (C40, C41) in Italy, by area (north, centre, and south) and by cancer registry. We also assess morphology in relation to site and area and assess metastases at diagnosis. We analysed 1,112 cases, with incidence 2009–2012, provided by 15 cancer registries (CRs) affiliated to the Association of Italian Cancer Registr

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19

Wetherall, Alison. "Core competency framework." Cancer Nursing Practice 2, no. 10 (2003): 16–17. http://dx.doi.org/10.7748/cnp2003.12.2.10.16.c49.

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20

Jiang, Mingjing, Haoze Zhang, and Ruohan Sun. "Investigating the shear behaviors of unsaturated structured loess in direct shear test by the discrete element method." Japanese Geotechnical Society Special Publication 8, no. 8 (2020): 294–98. http://dx.doi.org/10.3208/jgssp.v08.c49.

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21

Niranjan, Manish K. "Anisotropy in elastic properties of TiSi2(C49,C40 andC54), TiSi and Ti5Si3: anab-initiodensity functional study." Materials Research Express 2, no. 9 (2015): 096302. http://dx.doi.org/10.1088/2053-1591/2/9/096302.

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22

Makogon, Yu N., O. P. Pavlova, Sergey I. Sidorenko, G. Beddies, and A. V. Mogilatenko. "Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems." Defect and Diffusion Forum 264 (April 2007): 159–62. http://dx.doi.org/10.4028/www.scientific.net/ddf.264.159.

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Influence of an annealing environment and film thickness on the phase formation in the Ti(30 nm)/Si(100), [(Ti+Si) 200 nm]/Si(100) thin film systems produced by magnetron sputtering and the Ti(200 nm)/Si(100) thin film system produced by electron-beam sputtering were investigated by X-ray and electron diffraction, Auger electron spectroscopy (AES), secondary ion mass-spectrometry (SIMS) and resistivity measurements. Solid-state reactions in the thin film systems under investigation were caused by diffusion processes during annealing in the different gas environments: under vacuum of 10-4 - 10-

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23

Alessandrino, M. S., M. G. Grimaldi, and F. La Via. "C49–C54 phase transition in nanometric titanium disilicide nanograins." Microelectronic Engineering 64, no. 1-4 (2002): 189–96. http://dx.doi.org/10.1016/s0167-9317(02)00786-4.

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24

Yang, Jun-Mo, Ju-Chul Park, Dae-Gyu Park, et al. "Epitaxial C49–TiSi2 phase formation on the silicon (100)." Journal of Applied Physics 94, no. 6 (2003): 4198–202. http://dx.doi.org/10.1063/1.1604955.

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25

Alessandrino, M. S., S. Privitera, M. G. Grimaldi, C. Bongiorno, S. Pannitteri, and F. La Via. "C49-C54 phase transition in nanometric titanium disilicide grains." Journal of Applied Physics 95, no. 4 (2004): 1977–85. http://dx.doi.org/10.1063/1.1635651.

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26

Bretschneider, Werner, Gunter Beddies, and Roland Scholz. "The metastable C49 structure in sputtered TiSi2 thin films." Thin Solid Films 158, no. 2 (1988): 255–63. http://dx.doi.org/10.1016/0040-6090(88)90028-4.

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27

Liao, Chuang-Yi, and Hon Man Lee. "trans-Dichlorodipyridinepalladium(II)." Acta Crystallographica Section E Structure Reports Online 62, no. 4 (2006): m680—m681. http://dx.doi.org/10.1107/s160053680600688x.

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In the structure of the title compound, [PdCl2(C5H5N)2], determined at 150 K, the Pd atom is located on an inversion centre. The structure is a polymorph of a previously reported structure [Viossat et al. (1993). Acta Cryst. C49, 84–85].

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28

Gopalswamy, Natchimuthuk, Ingrid Mann, Jean-Louis Bougeret, et al. "DIVISION II: COMMISSION 49: INTERPLANETARY PLASMA AND THE HELIOSPHERE." Proceedings of the International Astronomical Union 10, T28B (2013): 112–14. http://dx.doi.org/10.1017/s1743921315005542.

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The President of IAU Commission 49 (C49; Interplanetary Plasma and the Heliosphere), Nat Gopalswamy, chaired the business meeting of C10, which took place on August 23, 2012 in the venue of the IAU General Assembly in Beijing (2:00 - 3:30 PM, Room 405).

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29

Barmak, K., L. E. Levine, D. A. Smith, and Y. Komemt. "In situ tEM observation of C49 to C54 TiSi2 transformation." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1356–57. http://dx.doi.org/10.1017/s0424820100131413.

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The reaction of thin films of Ti with Si results in the formation of the high resistivity (≃150 μΩcm) base-centered orthorhombic C49 phase prior to the low resistivity (≃15-20 μΩcm) face-centered orthorhombic C54 phase. In our experiments, 30 nm of Ti was evaporated onto a < 100 > oriented Si wafer cleaned in a 10:1 H2O:HF solution. The wafer had been previously implanted with As to a dose of 5×l015 cm−2. Mixed C49/C54 phase films were obtained by furnace annealing at 700°C for 10 min. Plan view transmission electron microscopy (TEM) specimens were prepared by dimpling and etching in a 1

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30

Lintner, Katherine E., Anjali Patwardhan, Lisa G. Rider, et al. "Gene copy-number variations (CNVs) of complement C4 and C4A deficiency in genetic risk and pathogenesis of juvenile dermatomyositis." Annals of the Rheumatic Diseases 75, no. 9 (2015): 1599–606. http://dx.doi.org/10.1136/annrheumdis-2015-207762.

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ObjectiveComplement-mediated vasculopathy of muscle and skin are clinical features of juvenile dermatomyositis (JDM). We assess gene copy-number variations (CNVs) for complement C4 and its isotypes, C4A and C4B, in genetic risks and pathogenesis of JDM.MethodsThe study population included 105 patients with JDM and 500 healthy European Americans. Gene copy-numbers (GCNs) for total C4, C4A, C4B and HLA-DRB1 genotypes were determined by Southern blots and qPCRs. Processed activation product C4d bound to erythrocytes (E-C4d) was measured by flow cytometry. Global gene-expression microarrays were p

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31

Privitera, S., S. Quilici, F. La Via, C. Spinella, F. Meinardi, and E. Rimini. "Kinetics of the C49–C54 transformation by micro-Raman imaging." Microelectronic Engineering 55, no. 1-4 (2001): 109–14. http://dx.doi.org/10.1016/s0167-9317(00)00435-4.

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32

Mann, R. W., L. A. Clevenger, and Q. Z. Hong. "The C49 to C54‐TiSi2transformation in self‐aligned silicide applications." Journal of Applied Physics 73, no. 7 (1993): 3566–68. http://dx.doi.org/10.1063/1.352910.

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33

Jongste, J. F., O. B. Loopstra, G. C. A. M. Janssen, and S. Radelaar. "Elastic constants and thermal expansion coefficient of metastable C49 TiSi2." Journal of Applied Physics 73, no. 6 (1993): 2816–20. http://dx.doi.org/10.1063/1.353058.

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34

Motakef, S., J. M. E. Harper, F. M. d’Heurle, T. A. Gallo, and N. Herbots. "Stability of C49 and C54 phases of TiSi2under ion bombardment." Journal of Applied Physics 70, no. 5 (1991): 2660–66. http://dx.doi.org/10.1063/1.349380.

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35

Engqvist, Jan, Ulf Jansson, Jun Lu, and Jan‐Otto Carlsson. "C49/C54 phase transformation during chemical vapor deposition of TiSi2." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12, no. 1 (1994): 161–68. http://dx.doi.org/10.1116/1.578914.

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Fung, M. S., H. C. Cheng, and L. J. Chen. "Localized epitaxial growth of C54 and C49 TiSi2on (111)Si." Applied Physics Letters 47, no. 12 (1985): 1312–14. http://dx.doi.org/10.1063/1.96263.

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Mann, R. W., and L. A. Clevenger. "The C49 to C54 Phase Transformation in TiSi2 Thin Films." Journal of The Electrochemical Society 141, no. 5 (1994): 1347–50. http://dx.doi.org/10.1149/1.2054921.

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38

Mohadjeri, B., K. Maex, R. A. Donaton, and H. Bender. "Ion‐Induced Amorphization and Regrowth of C49 and C54 TiSi2." Journal of The Electrochemical Society 146, no. 3 (1999): 1122–29. http://dx.doi.org/10.1149/1.1391732.

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Wang, Tao, Soon-Young Oh, Won-Jae Lee, Yong-Jin Kim, and Hi-Deok Lee. "Ab initio comparative study of C54 and C49 TiSi2 surfaces." Applied Surface Science 252, no. 14 (2006): 4943–50. http://dx.doi.org/10.1016/j.apsusc.2005.07.029.

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Quintero, A., M. Libera, C. Cabrai, C. Lavoie, and J. M. E. Harper. "Silicide Identification in Rta-Processed Ti Salicide by Analytical Electron Microscopy." Microscopy and Microanalysis 3, S2 (1997): 453–54. http://dx.doi.org/10.1017/s1431927600009156.

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Titanium suicides have low resistivity, low contact resistance, and are widely used as interconnects in electronic devices. The most desirable structure is the C54 variant of titanium disilicide (TiSi2). It is typically formed during thermal annealing by a polymorphic transformation from the C49 TiSi2 structure. The C49 to C54 transformation has been studied extensively and there has been substantial effort to devise ways in which to lower the temperature associated with this transformation. This research uses high-resolution imaging (HREM), convergent-beam diffraction (CBED), and energy-dispe

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Harmati, Attila. "Adatbányászat üzleti szemmel (I. rész)." Competitio 8, no. 2 (2020). http://dx.doi.org/10.21845/comp/2009/2/4.

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A cikk az adatbányászat technológiájának gyakorlati alkalmazását szemlélteti egy – a szerző által készített – adatbányászati projekt bemutatása révén. Az esettanulmány elkészítésének célja egy osztályozási modell kialakítása volt logisztikus regressziós modellek, döntési fa és neurális háló felhasználásával. A megfelelő eljárás megtalálásával az adatállományt nyújtó vállalat egy jövőbeli direktmarketing-akcióhoz kapcsolódóan tudatosan jelölheti ki azon ügyfelek körét, akik egy személyes levélre nagy valószínűséggel kedvezően reagálnának. A potenciálisan kedvező ügyfelek ezáltal hatékonyabban é

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42

Cabral, C., L. A. Clevenger, J. M. E. Harper, et al. "In-Situ x-Ray Diffraction Analysis of TiSi2 Phase Formation from a Titanium-Molybdenum Bilayer." MRS Proceedings 441 (1996). http://dx.doi.org/10.1557/proc-441-295.

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AbstractWe demonstrate that the addition of a molybdenum interlayer between titanium and silicon enhances the formation of C54 TiSi2, without bypassing the formation of the C49 TiSi2 phase. In situ x-ray diffraction analysis during rapid thermal annealing, at a rate of 3 °C/s, was used to study the phase formation sequence of TiSi2 starting from a blanket bilayer of Ti on Mo on a polycrystalline Si substrate. It was shown, as in the case without the Mo layer, that the C49 TiSi2 phase forms first, followed by the C54 TiSi2 phase. The results were similar for undoped or arsenic, boron, and phosp

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43

Nakamura, T., K. Ikeda, H. Tomita, S. Komiya, and K. Nakajima. "C49-TiSi2 Epitaxial Orientation Dependence of the C49-to-C54 Phase Transformation Rate." MRS Proceedings 514 (1998). http://dx.doi.org/10.1557/proc-514-213.

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ABSTRACTEffects of the C49-TiSi2 epitaxial orientation on the C49-to-C54 phase transformation rate have been studied for samples with different pre-amorphization implantation (PAI) conditions. The C49 epitaxial orientation to the Si(001) substrate is characterized by use of grazing-incidence X-ray diffraction (GIXD) measurements. We found that the PAl treatment suppresses the epitaxial growth of C49-TiSi2 on Si(001) substrates and the poorer orientational alignment of C49-TiSi2 causes a more rapid transformation to C54-TiSi2. We believe this suppression of epitaxial alignment is a possible mec

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Wang, Ting, Jingjing Dong, Xu Yuan, et al. "A New Chalcone Derivative C49 Reverses Doxorubicin Resistance in MCF-7/DOX Cells by Inhibiting P-Glycoprotein Expression." Frontiers in Pharmacology 12 (April 13, 2021). http://dx.doi.org/10.3389/fphar.2021.653306.

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Objective: C49 is a chalcone derivative. The aim of the current study is to illuminate the efficacy of C49 in reversing multidrug resistance (MDR) in MCF-7/DOX cells and its underlying molecular mechanism.Methods: The cytotoxic effects of C49 on MCF-7/DOX cells were evaluated by MTT assay using different concentration (0–250 μmol/L) of C49. Cell proliferation was evaluated by colony formation assay. Cell death was examined by morphological analysis using Hoechst 33,258 staining. Flow cytometry and immunofluorescence were utilized to evaluate the intracellular accumulation of doxorubicin (DOX)

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Cheng, S. L., S. M. Chang, H. Y. Huang, et al. "The Influence Of Stress on The Growth of Titanium Silicide Thin Films on (001) Silicon Substrates." MRS Proceedings 564 (1999). http://dx.doi.org/10.1557/proc-564-9.

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AbstractThe influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for

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"Poster Session C49: Tumours." Brain Pathology 10, no. 4 (2006): 746–49. http://dx.doi.org/10.1111/j.1750-3639.2000.tb00360.x.

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Domenicucci, A., G. Gifford, and L. A. Clevenger. "Observation of Crystallization, Precipitation, and Phase Transformation Phenomena in Si Rich Titanium Silicide Thin Films." MRS Proceedings 398 (1995). http://dx.doi.org/10.1557/proc-398-463.

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ABSTRACTCrystallization, precipitation, and phase transformation phenomena were observed in titanium suicide thin film samples during in situ heating experiments in a transmission electron microscope. The as-deposited TixSiy films were 110 nm in thickness with a composition of 1 Ti to 2.33 Si. Crystallization of the C49 phase was followed isothermally near the sputter deposition temperature. The movement of individual grain boundaries was recorded so that a “velocity of crystallization” could be calculated. The precipitation of excess silicon from the C49 phase was first observed in the 650°C

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Kappius, L., and R. T. Tung. "On the Template Mechanism of Enhanced C54-TiSi2 Formation." MRS Proceedings 611 (2000). http://dx.doi.org/10.1557/proc-611-c8.2.1.

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ABSTRACTThe enhanced formation of the C54-TiSi2 phase by the addition of small amounts of refractory metal (Tm = Mo, Ta, Nb,..) has often been ascribed to a template mechanism from the C40 TixRm1−xSi2 or the (Ti,Rm)5Si3 phase. Due to lattice matching conditions, the presence of either of these phases is thought to lower the interface energies with certain orientations of the C54-TiSi2 grain and, thereby, possibly lower the nucleation barrier of the C54-TiSi2 phase. These proposed template mechanisms are specifically tested in the present work through a study of the nucleation of TiSi2 phase(s)

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Clevenger, L. A., C. Cabral, R. A. Roy, et al. "In Situ Analysis of the Formation of thin TISI2, (>50 nm) Contacts in Submicron Cmos Structures during Rapid Thermal Annealing." MRS Proceedings 402 (1995). http://dx.doi.org/10.1557/proc-402-257.

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AbstractA detailed in situ study of silicide reactions during rapid thermal annealing of patterned structures was performed to determine the effects of linewidth (0.2 to 1.1 μm), dopants (arsenic, boron or phosphorus) and silicon substrate type (poly-Si or <100>-Si) on the C49 to C54-TiSi2 transformation. A synchrotron x-ray source and a high speed position sensitive detector were used to collect x-ray diffraction patterns of the reacting phases on a millisecond time scale, in situ, during annealing. We demonstrate that most patterned C49-TiSi2 structures (0.2 to 1.1 μm in width, 2 to 4

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Jeon, Hyeongtag, J. W. Honeycutt, C. A. Sukow, G. A. Rozgonyi, and R. J. Nemanich. "Thickness Dependence of Epitaxial TiSi2 on Si(111)." MRS Proceedings 202 (1990). http://dx.doi.org/10.1557/proc-202-673.

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ABSTRACTThe epitaxy and morphology of TiSi2 on Si(l 11) are studied as a function of Ti thickness. Titanium thicknesses of 1–2 monolayers and Ti films with thicknesses of 50Å; were examined. The titanium silicide films were formed on atomically clean Si substrates by ultrahigh vacuum (UHV) deposition of Ti followed by in situ annealing. In situ LEED and AES measurements characterized the reaction process. For room temperature deposition of less than two monolayers of Ti the LEED pattern associated with the reconstructed substrate disappeared, and the 1×1 bulk pattern also disappeared completel

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