Relevant bibliographies by topics / Cadmium zinc telluride (CdZnTe

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Cadmium zinc telluride (CdZnTe'

Author: Grafiati
Published: 4 June 2021
Last updated: 12 February 2022

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Journal articles on the topic "Cadmium zinc telluride (CdZnTe"

1

Veale, Matthew Charles, Paul Booker, Simon Cross, Matthew David Hart, Lydia Jowitt, John Lipp, Andreas Schneider, et al. "Characterization of the Uniformity of High-Flux CdZnTe Material." Sensors 20, no. 10 (May 12, 2020): 2747. http://dx.doi.org/10.3390/s20102747.

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Since the late 2000s, the availability of high-quality cadmium zinc telluride (CdZnTe) has greatly increased. The excellent spectroscopic performance of this material has enabled the development of detectors with volumes exceeding 1 cm3 for use in the detection of nuclear materials. CdZnTe is also of great interest to the photon science community for applications in X-ray imaging cameras at synchrotron light sources and free electron lasers. Historically, spatial variations in the crystal properties and temporal instabilities under high-intensity irradiation has limited the use of CdZnTe detectors in these applications. Recently, Redlen Technologies have developed high-flux-capable CdZnTe material (HF-CdZnTe), which promises improved spatial and temporal stability. In this paper, the results of the characterization of 10 HF-CdZnTe detectors with dimensions of 20.35 mm × 20.45 mm × 2.00 mm are presented. Each sensor has 80 × 80 pixels on a 250-μm pitch and were flip-chip-bonded to the STFC HEXITEC ASIC. These devices show excellent spectroscopic performance at room temperature, with an average Full Width at Half Maximum (FWHM) of 0.83 keV measured at 59.54 keV. The effect of tellurium inclusions in these devices was found to be negligible; however, some detectors did show significant concentrations of scratches and dislocation walls. An investigation of the detector stability over 12 h of continuous operation showed negligible changes in performance.
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2

Tang, Zhi Ling, and Min Shen. "Performance Test and Evaluation for Pixel CdZnTe Detector of Different Thickness." Advanced Materials Research 1015 (August 2014): 101–4. http://dx.doi.org/10.4028/www.scientific.net/amr.1015.101.

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Cadmium zinc telluride (CZT) material is one of the preferred materials for the fabrication of X-ray and gamma-ray detector. In this paper, it is presented an experimental detector system based on pixellated CZT semiconductor detector. The aim of this study is to get the photon energy suitable for different thickness detector, different photon energy acts on pixel CdZnTe detector of different thickness. We can obtain the energy spectrum estimation, energy resolution and peak efficiency by the experiment and simulation with the radiation source of 241Am and 137Cs acting on pixel CdZnTe detector. From experiment results, it can be found that at the high energy of 662keV the thicker CdZnTe detector is high. The characteristic of detector is better at the low energy when the detector thickness is thinner.
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Tsigaridas, Stergios, Silvia Zanettini, Manuele Bettelli, Nicola Sarzi Amadè, Davide Calestani, Cyril Ponchut, and Andrea Zappettini. "Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays." Sensors 21, no. 9 (April 22, 2021): 2932. http://dx.doi.org/10.3390/s21092932.

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Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 m and thickness of 1 mm and 2 mm. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays provided by conventional sources. Despite the issues related to single-chip fabrication procedure, reasonable uniformity was achieved along with low leakage current values at room temperature. In addition, the sensors show stable performance over time at moderate incoming fluxes, below 106 photons mm−2s−1.
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Wang, Tao, Wanqi Jie, Dongmei Zeng, Ge Yang, Yadong Xu, Weihua Liu, and Jijun Zhang. "Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride." Journal of Materials Research 23, no. 5 (May 2008): 1389–92. http://dx.doi.org/10.1557/jmr.2008.0163.

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Temperature-dependent photoluminescence (PL) spectra were measured to characterize the In-doped cadmium zinc telluride (CdZnTe, or CZT) crystals along the growth direction in the range of 10 to 60 K. High-resistivity CZT samples with 1.2 ppm In dopant at the tip and low-resistivity samples with 60 ppm In dopant at the heel have been assessed. The PL intensity quenching of D0X were fitted with two activation energies for high-resistivity CZT sample and only one activation energy for low-resistivity sample, respectively, suggesting different recombination mechanisms. The C-line was observed in the PL spectra of low-resistivity CZT sample and considered to the results of the isoelectronic complexes, InCd–VCd–InCd, while in high-resistivity CZT sample, shallow donor accepted pair (DAP) transition was identified, and thought to be related to InCd–VCd. The A-center in PL spectra was observed in low-resistivity CZT sample, which is indicative of more cadmium vacancies. It turns out that indium in low-resistivity CZT sample has not been doped as efficiently as in high-resistivity CZT sample because of the self-compensation.
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Shanmugan, S., D. Mutharasu, and Kamarulazizi Ibrahim. "Structural and Optical Properties of Zn Doped CdTe Thin Films by Stacked Elemental Layer Method." Advanced Materials Research 383-390 (November 2011): 3279–85. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.3279.

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25% Zinc doped Cadmium Telluride thin films were prepared using Stacked Elemental Layer method. The structural studies were conducted by the X-Ray technique and the results were compared with standard data which confirmed the presence of mixed phases (CdTe, ZnTe and CdZnTe) in the stack annealed at 425°C. Transmittance spectra depicted the effect of Zn on the optical properties of CdTe thin film. The calculated band gaps from the transmittance spectra were lie between 1.42 and 1.51eV. Scanning Electron Microscope images elucidated the influence of Zn on surface morphology and the grain growth for CdTe thin films.
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Koch-Mehrin, Kjell A. L., Sarah L. Bugby, John E. Lees, Matthew C. Veale, and Matthew D. Wilson. "Charge Sharing and Charge Loss in High-Flux Capable Pixelated CdZnTe Detectors." Sensors 21, no. 9 (May 8, 2021): 3260. http://dx.doi.org/10.3390/s21093260.

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Cadmium zinc telluride (CdZnTe) detectors are known to suffer from polarization effects under high photon flux due to poor hole transport in the crystal material. This has led to the development of a high-flux capable CdZnTe material (HF-CdZnTe). Detectors with the HF-CdZnTe material have shown promising results at mitigating the onset of the polarization phenomenon, likely linked to improved crystal quality and hole carrier transport. Better hole transport will have an impact on charge collection, particularly in pixelated detector designs and thick sensors (>1 mm). In this paper, the presence of charge sharing and the magnitude of charge loss were calculated for a 2 mm thick pixelated HF-CdZnTe detector with 250 μm pixel pitch and 25 μm pixel gaps, bonded to the STFC HEXITEC ASIC. Results are compared with a CdTe detector as a reference point and supported with simulations from a Monte-Carlo detector model. Charge sharing events showed minimal charge loss in the HF-CdZnTe, resulting in a spectral resolution of 1.63 ± 0.08 keV Full Width at Half Maximum (FWHM) for bipixel charge sharing events at 59.5 keV. Depth of interaction effects were shown to influence charge loss in shared events. The performance is discussed in relation to the improved hole transport of HF-CdZnTe and comparison with simulated results provided evidence of a uniform electric field.
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Tripathi, J. K., S. S. Harilal, and A. Hassanein. "Low energy Ar+ion irradiation induced surface modification in cadmium zinc telluride (CdZnTe)." Materials Research Express 1, no. 3 (September 2, 2014): 035904. http://dx.doi.org/10.1088/2053-1591/1/3/035904.

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Zhang, Zhen Yu, Bo Wang, and Ya Xing Song. "Chemical Mechanical Polishing of Soft-Brittle Cadmium Zinc Telluride Wafers Using a Developed Environment-Friendly Solution." Advanced Materials Research 1017 (September 2014): 720–25. http://dx.doi.org/10.4028/www.scientific.net/amr.1017.720.

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A novel chemical mechanical polishing (CMP) solution was developed. The CMP solution developed consisted of mainly silica, hydrogen peroxide, and malic acid. CMP solution is environment-friendly, which is different from those used in conventional CMP, consisting of acids or organic solvents. Fixed abrasive waterproof paper of alumina with mesh size of 3000 was used as lapping tool, to avoid embedding of free abrasives on soft cadmium zinc telluride (CdZnTe or CZT) surfaces employed in traditional lapping processes. The diameter of silica was varied from several tens of nanometers to 100 nanometers. Surface roughness Ra, and PV achieved using fixed abrasive lapping and developed CMP solution are 0.6 nm and 6.3 nm, respectively. The polished CZT surface was cleaned by deionized water and dried using compressed air, to avoid damages induced by conventional physical wiping and ultrasonic cleaning on soft-brittle CZT wafers.
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Kato, Hideki, Koichi Nakamura, and Masatosi Tsuzaka. "Energy-Absorption Response of Cadmium Zinc Telluride (CdZnTe) Semiconductor Detectors to X-ray Photon Beams." IEEJ Transactions on Electronics, Information and Systems 120, no. 12 (2000): 1774–80. http://dx.doi.org/10.1541/ieejeiss1987.120.12_1774.

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Wilson, Emma, Mike Anderson, David Prendergasty, and David Cheneler. "Comparison of CdZnTe neutron detector models using MCNP6 and Geant4." EPJ Web of Conferences 170 (2018): 08008. http://dx.doi.org/10.1051/epjconf/201817008008.

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The production of accurate detector models is of high importance in the development and use of detectors. Initially, MCNP and Geant were developed to specialise in neutral particle models and accelerator models, respectively; there is now a greater overlap of the capabilities of both, and it is therefore useful to produce comparative models to evaluate detector characteristics. In a collaboration between Lancaster University, UK, and Innovative Physics Ltd., UK, models have been developed in both MCNP6 and Geant4 of Cadmium Zinc Telluride (CdZnTe) detectors developed by Innovative Physics Ltd. Herein, a comparison is made of the relative strengths of MCNP6 and Geant4 for modelling neutron flux and secondary γ-ray emission. Given the increasing overlap of the modelling capabilities of MCNP6 and Geant4, it is worthwhile to comment on differences in results for simulations which have similarities in terms of geometries and source configurations.
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Dissertations / Theses on the topic "Cadmium zinc telluride (CdZnTe"

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Prekas, Georgios J. "Electric field studies on cadmium zinc telluride (CdZnTe) materials." Thesis, University of Surrey, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.529445.

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Ergunt, Hasan Yasin. "Bulk Growth And Characterization Of Cadmium Zinc Telluride Crystals For Mercury Cadmium Telluride Infrared Detector Applications." Master's thesis, METU, 2012. http://etd.lib.metu.edu.tr/upload/12614738/index.pdf.

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HgCdTe (MCT) infrared (IR) photodetectors have been used for various military and civilian applications including thermal imaging, medical imaging, and astronomy. These detectors are commonly fabricated on MCT layers grown on a foreign substrate epitaxially using delicate growth techniques such as Molecular Beam Epitaxy (MBE). The crystal quality of epitaxial layers grown on a substrate critically depends on the quality of the substrate. One of the stringent requirements in choosing the substrate material is the lattice match between grown layer and the underlying substrate. With perfectly matching lattice structure, CdZnTe has been the major substrate material for the MCT growth. The production of defect free single crystal CdZnTe bulk crystal has then attracted great attention among the research and industrial community of MCT based photodetectors. This thesis focuses on the growth and characterization of Cd1-xZnxTe crystals with the main objective of obtaining high-quality, CZT bulk crystal with large crystal sizes. To be compatible with the subsequent MCT growth, we aimed to obtain Cd0.96Zn0.04Te crystals with (211) crystal surface orientation. CdZnTe bulk crystal growths were performed in three-zone vertical Bridgman furnace by a high temperature melt process called &ldquo
Modified Bridgman Technique&rdquo
. Difficulties in both growth and characterization are presented and discussed in this report. Characterization of the grown CdZnTe crystal was performed to determine the crystallographic orientation, crystal quality, Zn distribution, IR transmission, resistivity, polarity, etch pit density, and surface properties. For this purpose, electron microscopy with analytical diagnostic tools like EDS and EBSD, XRD, optical transmission spectroscopy, and electrical measurement systems have been employed. We demonstrated the successful growth of single crystal CZT crystals using our simple Bridgman furnace. Physical properties of the grown crystal were very promising and encouraging for future applications. Crystal pieces having sizes larger than 5 x 5 mm2 with uniform Zn distribution and (211) surface orientation were obtained. IR transmission of nearly 60% which is as good as that of the commercial substrates was achieved. The electrical resistivity was much better (higher) than generally accepted values. However, the XRD results indicated the presence of defects and/or micro grains in the bulk crystal. These structures seemed to have prevented obtaining good FWHM values, which are the measure of crystal quality, in the XRD analysis.
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Kargar, Alireza. "Characterization and optimization of CdZnTe Frisch collar gamma-ray spectrometers and their development in an array of detectors." Diss., Manhattan, Kan. : Kansas State University, 2009. http://hdl.handle.net/2097/1665.

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Meier, Michael. "Purification of Cd, Zn and Te for CdZnTe growth." Thesis, Manhattan, Kan. : Kansas State University, 2009. http://hdl.handle.net/2097/1693.

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Menezes, Tiago. "Room temperature CdZnTe X- and gamma-ray detectors for nuclear physics applications." Thesis, University of Surrey, 2000. http://epubs.surrey.ac.uk/842705/.

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Gamma-ray spectroscopy is undoubtedly the most effective tool for understanding the structure of the nucleus. In common with many other problems however, there is more information available that can be readily measured by standard experimental facilities. Therefore, this thesis investigates the potential for the use of a new detector material, CdZnTe, in nuclear physics applications. To evaluate the requirements of detection systems for nuclear physics applications, a y-ray spectroscopy experiment was performed to investigate neutron alignments in 100Mo, 104Ru and 108Pd using deep-inelastic reactions. This showed that a detector capable of detecting low energy (< 100 keV) X- rays without compromising y-ray detection efficiency could have significant benefit. A room temperature CdZnTe semiconductor detector could reasonably form part of a standard escape suppressed spectrometer. However, there is a substantially higher leakage current associated with room temperature semiconductor devices than standard cryogenically cooled semiconductor detectors. CdZnTe suffers from significant charge trapping, and therefore the rise time of the radiation induced pulses forms an important part of the signal analysis from such detectors. These two problems have implications on the design of preamplifier systems for CdZnTe detectors. For this reason, this thesis describes the design of optimised electronic systems for use with room-temperature operated CdZnTe detectors. Here, the focus is on the preamplifier design, and on practical ways of analysing noise performance of the preamplifier. A new preamplifier configuration with digital output has been developed, and a detailed signal-to-noise analysis performed. Such a circuit facilitates simultaneous measurement of both energy and pulse shape information.
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Bassani, Franck. "Dopage indium d'hétérostructures CdTe/CdZnTe en épitaxie par jets moléculaires." Grenoble 1, 1993. http://www.theses.fr/1993GRE10043.

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Ce travail concerne le dopage indium des couches minces de cdte et des heterostructures cdte/cdznte elaborees par la technique d'epitaxie par jets moleculaires selon les orientations (001), (111) et (211). Nous avons mis en evidence l'importance des conditions stchiometriques de surface durant la croissance: un flux excedentaire de cd controle ainsi qu'une temperature d'elaboration basse (220c) sont necessaires. Pour une gamme de concentration d'indium comprise entre 10#1#6 et 10#1#8 cm##3, l'analyse des proprietes electrique et optique des couches minces de cdte(001) uniformement dopees montre une activite electrique proche de l'unite et l'absence de centres profonds. Le dopage planaire des heterostructures cdte/cdznte a ete realise avec succes: l'optimisation des conditions de spectrometrie de masse des ions secondaires permet de deduire que le dopant in est tres bien localise spatialement (<15 a); une etude spectroscopique de la variation de l'energie de localisation de l'exciton sur le donneur en fonction du confinement quantique a ete entreprise. Nous presentons egalement les resultats de dopage selon les orientations (111) et (211). L'utilisation de substrats (111) legerement desorientes et orientes (211) permet de s'affranchir des macles. En particulier, l'orientation (211) permet d'elaborer des couches d'excellente qualite cristalline dont les proprietes electriques et optiques sont voisines de celles des couches de cdte(001). Nous avons mis en evidence l'ecrantage du champ piezoelectrique pour une heterostructure cdte/cdznte(211) a dopage module
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Födisch, Philipp. "Instrumentation of CdZnTe detectors for measuring prompt gamma-rays emitted during particle therapy." Doctoral thesis, Helmholtz-Zentrum Dresden-Rossendorf, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-224868.

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Background: The irradiation of cancer patients with charged particles, mainly protons and carbon ions, has become an established method for the treatment of specific types of tumors. In comparison with the use of X-rays or gamma-rays, particle therapy has the advantage that the dose distribution in the patient can be precisely controlled. Tissue or organs lying near the tumor will be spared. A verification of the treatment plan with the actual dose deposition by means of a measurement can be done through range assessment of the particle beam. For this purpose, prompt gamma-rays are detected, which are emitted by the affected target volume during irradiation. Motivation: The detection of prompt gamma-rays is a task related to radiation detection and measurement. Nuclear applications in medicine can be found in particular for in vivo diagnosis. In that respect the spatially resolved measurement of gamma-rays is an essential technique for nuclear imaging, however, technical requirements of radiation measurement during particle therapy are much more challenging than those of classical applications. For this purpose, appropriate instruments beyond the state-of-the-art need to be developed and tested for detecting prompt gamma-rays. Hence the success of a method for range assessment of particle beams is largely determined by the implementation of electronics. In practice, this means that a suitable detector material with adapted readout electronics, signal and information processing, and data interface must be utilized to solve the challenges. Thus, the parameters of the system (e.g. segmentation, time or energy resolution) can be optimized depending on the method (e.g. slit camera, time-of-flight measurement or Compton camera). Regardless of the method, the detector system must have a high count rate capability and a large measuring range (>7 MeV). For a subsequent evaluation of a suitable method for imaging, the mentioned parameters may not be restricted by the electronics. Digital signal processing is predestined for multipurpose tasks, and, in terms of the demands made, the performance of such an implementation has to be determined. Materials and methods: In this study, the instrumentation of a detector system for prompt gamma-rays emitted during particle therapy is limited to the use of a cadmium zinc telluride (CdZnTe, CZT) semiconductor detector. The detector crystal is divided into an 8x8 pixel array by segmented electrodes. Analog and digital signal processing are exemplarily tested with this type of detector and aims for application of a Compton camera to range assessment. The electronics are implemented with commercial off-the-shelf (COTS) components. If applicable, functional units of the detector system were digitalized and implemented in a field-programmable gate array (FPGA). An efficient implementation of the algorithms in terms of timing and logic utilization is fundamental to the design of digital circuits. The measurement system is characterized with radioactive sources to determine the measurement dynamic range and resolution. Finally, the performance is examined in terms of the requirements of particle therapy with experiments at particle accelerators. Results: A detector system based on a CZT pixel detector has been developed and tested. Although the use of an application-specific integrated circuit is convenient, this approach was rejected because there was no circuit available which met the requirements. Instead, a multichannel, compact, and low-noise analog amplifier circuit with COTS components has been implemented. Finally, the 65 information channels of a detector are digitized, processed and visualized. An advanced digital signal processing transforms the traditional approaches of nuclear electronics in algorithms and digital filter structures for an FPGA. With regard to the characteristic signals (e.g. varying rise times, depth-dependent energy measurement) of a CZT pixel detector, it could be shown that digital pulse processing results in a very good energy resolution (~2% FWHM at 511 keV), as well as permits a time measurement in the range of some tens of nanoseconds. Furthermore, the experimental results have shown that the dynamic range of the detector system could be significantly improved compared to the existing prototype of the Compton camera (~10 keV..7 MeV). Even count rates of ~100 kcps in a high-energy beam could be ultimately processed with the CZT pixel detector. But this is merely a limit of the detector due to its volume, and not related to electronics. In addition, the versatility of digital signal processing has been demonstrated with other detector materials (e.g. CeBr3). With foresight on high data throughput in a distributed data acquisition from multiple detectors, a Gigabit Ethernet link has been implemented as data interface. Conclusions: To fully exploit the capabilities of a CZT pixel detector, a digital signal processing is absolutely necessary. A decisive advantage of the digital approach is the ease of use in a multichannel system. Thus with digitalization, a necessary step has been done to master the complexity of a Compton camera. Furthermore, the benchmark of technology shows that a CZT pixel detector withstands the requirements of measuring prompt gamma-rays during particle therapy. The previously used orthogonal strip detector must be replaced by the pixel detector in favor of increased efficiency and improved energy resolution. With the integration of the developed digital detector system into a Compton camera, it must be ultimately proven whether this method is applicable for range assessment in particle therapy. Even if another method is more convenient in a clinical environment due to practical considerations, the detector system of that method may benefit from the shown instrumentation of a digital signal processing system for nuclear applications
Hintergrund: Die Bestrahlung von Krebspatienten mit geladenen Teilchen, vor allem Protonen oder Kohlenstoffionen, ist mittlerweile eine etablierte Methode zur Behandlung von speziellen Tumorarten. Im Vergleich mit der Anwendung von Röntgen- oder Gammastrahlen hat die Teilchentherapie den Vorteil, dass die Dosisverteilung im Patienten präziser gesteuert werden kann. Dadurch werden um den Tumor liegendes Gewebe oder Organe geschont. Die messtechnische Verifikation des Bestrahlungsplans mit der tatsächlichen Dosisdeposition kann über eine Reichweitenkontrolle des Teilchenstrahls erfolgen. Für diesen Zweck werden prompte Gammastrahlen detektiert, die während der Bestrahlung vom getroffenen Zielvolumen emittiert werden. Fragestellung: Die Detektion von prompten Gammastrahlen ist eine Aufgabenstellung der Strahlenmesstechnik. Strahlenanwendungen in der Medizintechnik finden sich insbesondere in der in-vivo Diagnostik. Dabei ist die räumlich aufgelöste Messung von Gammastrahlen bereits zentraler Bestandteil der nuklearmedizinischen Bildgebung, jedoch sind die technischen Anforderungen der Strahlendetektion während der Teilchentherapie im Vergleich mit klassischen Anwendungen weitaus anspruchsvoller. Über den Stand der Technik hinaus müssen für diesen Zweck geeignete Instrumente zur Erfassung der prompten Gammastrahlen entwickelt und erprobt werden. Die elektrotechnische Realisierung bestimmt maßgeblich den Erfolg eines Verfahrens zur Reichweitenkontrolle von Teilchenstrahlen. Konkret bedeutet dies, dass ein geeignetes Detektormaterial mit angepasster Ausleseelektronik, Signal- und Informationsverarbeitung sowie Datenschnittstelle zur Problemlösung eingesetzt werden muss. Damit können die Parameter des Systems (z. B. Segmentierung, Zeit- oder Energieauflösung) in Abhängigkeit der Methode (z.B. Schlitzkamera, Flugzeitmessung oder Compton-Kamera) optimiert werden. Unabhängig vom Verfahren muss das Detektorsystem eine hohe Ratenfestigkeit und einen großen Messbereich (>7 MeV) besitzen. Für die anschließende Evaluierung eines geeigneten Verfahrens zur Bildgebung dürfen die genannten Parameter durch die Elektronik nicht eingeschränkt werden. Eine digitale Signalverarbeitung ist für universelle Aufgaben prädestiniert und die Leistungsfähigkeit einer solchen Implementierung soll hinsichtlich der gestellten Anforderungen bestimmt werden. Material und Methode: Die Instrumentierung eines Detektorsystems für prompte Gammastrahlen beschränkt sich in dieser Arbeit auf die Anwendung eines Cadmiumzinktellurid (CdZnTe, CZT) Halbleiterdetektors. Der Detektorkristall ist durch segmentierte Elektroden in ein 8x8 Pixelarray geteilt. Die analoge und digitale Signalverarbeitung wird beispielhaft mit diesem Detektortyp erprobt und zielt auf die Anwendung zur Reichweitenkontrolle mit einer Compton-Kamera. Die Elektronik wird mit seriengefertigten integrierten Schaltkreisen umgesetzt. Soweit möglich, werden die Funktionseinheiten des Detektorsystems digitalisiert und in einem field-programmable gate array (FPGA) implementiert. Eine effiziente Umsetzung der Algorithmen in Bezug auf Zeitverhalten und Logikverbrauch ist grundlegend für den Entwurf der digitalen Schaltungen. Das Messsystem wird mit radioaktiven Prüfstrahlern hinsichtlich Messbereichsdynamik und Auflösung charakterisiert. Schließlich wird die Leistungsfähigkeit hinsichtlich der Anforderungen der Teilchentherapie mit Experimenten am Teilchenbeschleuniger untersucht. Ergebnisse: Es wurde ein Detektorsystem auf Basis von CZT Pixeldetektoren entwickelt und erprobt. Obwohl der Einsatz einer anwendungsspezifischen integrierten Schaltung zweckmäßig wäre, wurde dieser Ansatz zurückgewiesen, da kein verfügbarer Schaltkreis die Anforderungen erfüllte. Stattdessen wurde eine vielkanalige, kompakte und rauscharme analoge Verstärkerschaltung mit seriengefertigten integrierten Schaltkreisen aufgebaut. Letztendlich werden die 65 Informationskanäle eines Detektors digitalisiert, verarbeitet und visualisiert. Eine fortschrittliche digitale Signalverarbeitung überführt die traditionellen Ansätze der Nuklearelektronik in Algorithmen und digitale Filterstrukturen für einen FPGA. Es konnte gezeigt werden, dass die digitale Pulsverarbeitung in Bezug auf die charakteristischen Signale (u.a. variierende Anstiegszeiten, tiefenabhängige Energiemessung) eines CZT Pixeldetektors eine sehr gute Energieauflösung (~2% FWHM at 511 keV) sowie eine Zeitmessung im Bereich von einigen 10 ns ermöglicht. Weiterhin haben die experimentellen Ergebnisse gezeigt, dass der Dynamikbereich des Detektorsystems im Vergleich zum bestehenden Prototyp der Compton-Kamera deutlich verbessert werden konnte (~10 keV..7 MeV). Nach allem konnten auch Zählraten von >100 kcps in einem hochenergetischen Strahl mit dem CZT Pixeldetektor verarbeitet werden. Dies stellt aber lediglich eine Begrenzung des Detektors aufgrund seines Volumens, nicht jedoch der Elektronik, dar. Zudem wurde die Vielseitigkeit der digitalen Signalverarbeitung auch mit anderen Detektormaterialen (u.a. CeBr3) demonstriert. Mit Voraussicht auf einen hohen Datendurchsatz in einer verteilten Datenerfassung von mehreren Detektoren, wurde als Datenschnittstelle eine Gigabit Ethernet Verbindung implementiert. Schlussfolgerung: Um die Leistungsfähigkeit eines CZT Pixeldetektors vollständig auszunutzen, ist eine digitale Signalverarbeitung zwingend notwendig. Ein entscheidender Vorteil des digitalen Ansatzes ist die einfache Handhabbarkeit in einem vielkanaligen System. Mit der Digitalisierung wurde ein notwendiger Schritt getan, um die Komplexität einer Compton-Kamera beherrschbar zu machen. Weiterhin zeigt die Technologiebewertung, dass ein CZT Pixeldetektor den Anforderungen der Teilchentherapie für die Messung prompter Gammastrahlen stand hält. Der bisher eingesetzte Streifendetektor muss zugunsten einer gesteigerten Effizienz und verbesserter Energieauflösung durch den Pixeldetektor ersetzt werden. Mit der Integration des entwickelten digitalen Detektorsystems in eine Compton-Kamera muss abschließend geprüft werden, ob dieses Verfahren für die Reichweitenkontrolle in der Teilchentherapie anwendbar ist. Auch wenn sich herausstellt, dass ein anderes Verfahren unter klinischen Bedingungen praktikabler ist, so kann auch dieses Detektorsystem von der gezeigten Instrumentierung eines digitalen Signalverarbeitungssystems profitieren
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André, Régis. "Effet piézo-électrique dans les puits quantiques CdTe/CdMnTe et CdTe/CdZnTe." Université Joseph Fourier (Grenoble), 1994. https://tel.archives-ouvertes.fr/tel-00002688.

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Les materiaux de structure cubique blende de zinc sont piezo-electriques: une deformation de ces cristaux selon un axe polaire induit une polarisation electrique. Les puits quantiques contraints, de semi-conducteurs cubiques ii-vi ou iii-v, d'orientation 111 ou 211 presentent un champ electrique permanent de l'ordre de 100 kv/a pour 1% de deformation. Ces structures sont particulierement interessantes pour la modulation optique, mais il est necessaire d'etudier prealablement leurs proprietes specifiques avant de pouvoir envisager de les utiliser dans des dispositifs optiques. Dans ce but, nous avons etudie par spectroscopie optique des puits contraints cdte/cdmnte ou cdte/cdznte, elabores par epitaxie par jets moleculaires, avec comme axe de croissance 111 ou 211. Les resultats de spectroscopie ont ete confrontes a une modelisation en termes de fonctions enveloppes prenant en compte les effets de contraintes biaxiales pour une direction de croissance hhk. De plus, nous avons developpe une methode originale de mesure du champ piezo-electrique dans les puits quantiques grace a laquelle nous avons mis en evidence un effet piezo-electrique fortement non lineaire dans cdte. Cet effet n'avait jamais ete mentionne par ailleurs. Nous avons egalement mesure l'evolution du coefficient piezo-electrique e#1#4 cdte avec une forte pression hydrostatique, jusqu'a des deformations d'environ 2% et montre qu'une part des non-linearites provient d'un effet de volume. Enfin, nous avons etudie l'effet du champ piezo-electrique sur l'exciton. L'energie de liaison de l'exciton est assez peu affectee, par contre, force d'oscillateur decroit fortement pour la transition fondamentale du puits, avec le recouvrement des fonctions enveloppe d'electron et de trou. Notre modelisation de l'exciton, utilisant deux parametres variationnels, fournit un calcul precis, sans parametre ajustable, de l'absorption excitonique a travers un puits piezo-electrique: les calculs sont en tres bon accord, sur pres de deux ordres de grandeurs, avec les mesures d'absorption que nous avons realisees sur une serie d'echantillons de compositions variees
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Kheng, Kuntheak. "L'exciton chargé négativement X- dans les puits quantiques CdTe/CdZnTe." Université Joseph Fourier (Grenoble ; 1971-2015), 1995. http://www.theses.fr/1995GRE10006.

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Nous presentons la premiere identification de l'exciton charge negativement x#- dans une heterostructure semi-conductrice, a savoir dans des puits quantiques cdte/cdznte. Nous avons etudie les caracteristiques de la transition optique x#- dans ces puits, notamment en presence d'un champ magnetique. La transition x#- est identifiee dans les spectres d'absorption de puits dopes par modulation avec des donneurs indium. Cette identification est basee sur l'augmentation de l'intensite de la raie x#- avec la concentration d'electrons dans le puits et sur les proprietes de polarisation circulaire de cette raie. Nous avons notamment verifie, par une analyse du taux de polarisation en fonction de la temperature, que le facteur g de l'etat initial de l'absorption x#- est bien celui de l'electron. En placant les plans d'indium dans differentes positions, dans les barrieres et dans les puits, nous avons etudie l'evolution de la raie x#- vers celle de l'exciton piege sur un donneur, d#ox. La force d'oscillateur de x#- est d'environ 10 fois superieure a celle de d#ox. La raie d'absorption x#- est observee pour toute valeur du champ magnetique dans les spectres des echantillons faiblement dopes et l'evolution de sa position en fonction du champ montre que l'espece x#- est probablement localisee par des fluctuations de potentiel dans le plan du puits. En revanche, les spectres de puits contenant un gaz d'electrons concentre (10#1#1cm#-#2) presentent a champ nul un pic associe a l'exciton de mahan et a champ faible des transitions entre niveaux de landau. A champ magnetique suffisamment intense les raies excitoniques x et x#- reapparaissent. Nous attribuons ce phenomene a une reduction des effets d'exclusion et d'ecrantage due au gel des electrons dans les fluctuations de potentiel. Le champ critique de reapparition des raies excitoniques peut servir a definir le seuil du changement de phase metal-isolant detecte optiquement
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Montemont, Guillaume. "Optimisation des performances de détecteurs CdTe et CdZnTe en spectrométrie gamma." Université Joseph Fourier (Grenoble ; 1971-2015), 2000. http://www.theses.fr/2000GRE10172.

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Cette etude porte sur la detection spectrometrique gamma a base de detecteurs en materiaux semi-conducteurs cdte et cdznte, a temperature ambiante. Le but en etait l'amelioration des performances en resolution energetique et efficacite de detection. Pour cela, il a fallu analyser divers phenomenes. La nature du bruit electronique a ete etudiee, ce qui nous a permis d'optimiser son filtrage par l'electronique de traitement. Par ailleurs, en prenant en compte les problemes de transport des charges, nous avons concu des traitements electroniques s'adaptant a la variabilite des signaux mesures. La comprehension et la simulation du processus d'induction de courant electrique a permis la mise au point d'une nouvelle structure de detection avantageuse mettant en uvre le principe de la grille de frisch. Nous avons ainsi obtenu des resolutions energetiques de l'ordre de 3% a 122 kev sans perdre en efficacite de detection. Enfin, les limites de performances accessibles par ce type de detecteurs ont ete estimees grace a l'analyse de l'interaction des photons gamma dans le detecteur et des phenomenes lies a l'heterogeneite du materiau.
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Books on the topic "Cadmium zinc telluride (CdZnTe"

1

Rosenberger, F. Research support for cadmium telluride crystal growth: Final report, NASA grant NAG8-842, period of performance, 8/10/90 - 8/9/95. Huntsville, Ala: Center for Microgravity and Materials Research, University of Alabama in Huntsville, 1995.

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Rosenberger, F. Research support for cadmium telluride crystal growth: Sixth semi-annual report, NASA grant NAG8-842, period of performance, 2-11-92 - 8-10-93. Huntsville, Ala: Center for Microgravity and Materials Research, University of Alabama in Huntsviile, 1993.

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Patterson, James D. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995. [Washington, D.C: National Aeronautics and Space Administration, 1995.

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Penfold, James Simon Sebastian. An investigation of cadmium zinc telluride as a room temperature radiation detector. 1994.

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W, Palosz, and United States. National Aeronautics and Space Administration., eds. Seeded physical vapor transport of cadmium-zinc telluride crystals: Growth and characterization. [New York]: Elsevier, 1997.

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Witold, Palosz, and United States. National Aeronautics and Space Administration., eds. Growth of cadmium-zinc telluride crystals by controlled seeding "contactless" physical vapor transport. [Washington, D.C: National Aeronautics and Space Administration, 1997.

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Growth of cadmium-zinc telluride crystals by controlled seeding "contactless" physical vapor transport. [Washington, D.C: National Aeronautics and Space Administration, 1997.

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Witold, Palosz, and United States. National Aeronautics and Space Administration., eds. Growth of cadmium-zinc telluride crystals by controlled seeding "contactless" physical vapor transport. [Washington, D.C: National Aeronautics and Space Administration, 1997.

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Witold, Palosz, and United States. National Aeronautics and Space Administration., eds. Growth of cadmium-zinc telluride crystals by controlled seeding "contactless" physical vapor transport. [Washington, D.C: National Aeronautics and Space Administration, 1997.

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W, Palosz, and United States. National Aeronautics and Space Administration., eds. Characterization of cadmium-zinc telluride crystals grown by 'contactless' PVT using synchrotron white beam topography. [New York]: Elsevier, 1997.

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Book chapters on the topic "Cadmium zinc telluride (CdZnTe"

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Noda, A., H. Kurita, and R. Hirano. "Bulk Growth of CdZnTe/CdTe Crystals." In Mercury Cadmium Telluride, 21–50. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470669464.ch2.

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Schillebeeckx, Peter, Alessandro Borella, Michel Bruggeman, and Riccardo Rossa. "Cadmium Zinc Telluride Detectors for Safeguards Applications." In Advanced Materials for Radiation Detection, 331–46. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-76461-6_15.

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Adachi, Sadao. "Zinc Cadmium Telluride (Zn x Cd1-x Te)." In Optical Constants of Crystalline and Amorphous Semiconductors, 567–70. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5247-5_46.

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Garg, Arun Kumar, Shiv Kumar, Arun Tanwar, S. S. Rana, S. Tyagi, and Vikram Dhar. "MBE Growth of Hg1-xCdxTe on Cadmium Zinc Telluride Substrates." In Physics of Semiconductor Devices, 859–64. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_221.

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Zappettini, Andrea. "Cadmium telluride and cadmium zinc telluride." In Single Crystals of Electronic Materials, 273–301. Elsevier, 2019. http://dx.doi.org/10.1016/b978-0-08-102096-8.00008-2.

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Chakraborty, Monisha, and M. Saleem J. Hashmi. "Cadmium Telluride and Cadmium Zinc Telluride as Detector Materials and Their Practical Applications." In Reference Module in Materials Science and Materials Engineering. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-12-803581-8.10322-4.

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da Silva, Rui Miguel Curado, Ezio Caroli, Stefano del Sordo, and Jorge M. Maia. "Cadmium (Zinc) Telluride 2D/3D Spectrometers for Scattering Polarimetry." In Semiconductor Radiation Detectors, 241–82. CRC Press, 2017. http://dx.doi.org/10.1201/9781315200729-10.

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Kaufmann, Philipp A., Oliver Gaemperli, and Juhani Knuuti. "Future potential." In ESC CardioMed, edited by Philipp Kaufmann, 608–12. Oxford University Press, 2018. http://dx.doi.org/10.1093/med/9780198784906.003.0129.

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The last years have witnessed important technological advances in cardiac radionuclide imaging driving research and clinical use and highlighting the potential of the technique for future applications. Among many fields under development, hardware design for dedicated small-footprint cardiac single-photon emission computed tomography (SPECT) scanners has made a huge leap forward. Particularly, the introduction of novel solid-state detector material (cadmium–zinc–telluride alloys) has improved detector sensitivity, reduced signal loss, enhanced spatial and energy resolution, and has opened avenues for novel ultrafast or low-dose imaging protocols. Positron emission tomography (PET) offers some advantages over SPECT with regard to spatial resolution and attenuation correction. Additionally, it allows the calculation of myocardial blood flow in tissue (in mL/min/g), which has emerged as a powerful marker of cardiovascular risk with incremental predictive value over traditional risk markers, perfusion variables, and ejection fraction. Moreover, hybrid PET/CT imaging allows a comprehensive assessment of coronary artery disease by a combination of anatomo-functional information. Recently, PET/magnetic resonance imaging has entered the clinical arena with the first fully integrated scanners now being commercially available. However, the clinical value of this promising technology has yet to be explored. Finally, the use of radionuclide imaging for molecular imaging allows ultraprecise targeting of culprit cells or molecules underlying pathophysiological processes of disease and, in the future, may possibly facilitate targeted delivery of bioengineered therapeutic nanoparticles.
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Conference papers on the topic "Cadmium zinc telluride (CdZnTe"

1

Nelson, Matthew P., Juliana M. Ribar, Robert Schweitzer, Scott A. Keitzer, Patrick J. Treado, Karl A. Harris, and Danny J. Reese. "Automated inspection of tellurium inclusions in cadmium zinc telluride (CdZnTe)." In International Symposium on Optical Science and Technology, edited by Ralph B. James and Richard C. Schirato. SPIE, 2000. http://dx.doi.org/10.1117/12.407581.

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Quam, William M., Thomas DeVore, Harold R. McHugh, Robert D. Vogel, and John Wesolowski. "Cadmium-zinc-telluride crystal array spectrometer." In Optical Science and Technology, SPIE's 48th Annual Meeting, edited by Larry A. Franks, Arnold Burger, Ralph B. James, and Paul L. Hink. SPIE, 2004. http://dx.doi.org/10.1117/12.510747.

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Mendis, R., M. L. Smith, R. E. M. Vickers, R. A. Lewis, and C. Zhang. "THz Emission from Mercury Cadmium Telluride Films Grown on Cadmium Zinc Telluride Substrates." In >2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics. IEEE, 2006. http://dx.doi.org/10.1109/icimw.2006.368642.

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Burger, Arnold, Henry Chen, Kaushik Chattopadhyay, Jean-Olivier Ndap, Stephen U. Egarievwe, and Ralph B. James. "Cadmium zinc telluride high-resolution detector technology." In SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, edited by F. P. Doty and Richard B. Hoover. SPIE, 1998. http://dx.doi.org/10.1117/12.312886.

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McCandless, Brian E., Wayne A. Buchanan, and Gregory M. Hanket. "Thin Film Cadmium Zinc Telluride Solar Cells." In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279496.

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Huang, Hui, Rui-min Wan, Zeng-lin Zhao, Quan-lin Yue, Rong-bin Ji, and Shun-chen Pan. "Research and development of cadmium zinc telluride substrates for mercury cadmium telluride epitaxial films." In Photonics Asia 2004, edited by Haimei Gong, Yi Cai, and Jean-Pierre Chatard. SPIE, 2005. http://dx.doi.org/10.1117/12.570660.

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Zumbiehl, A., M. Sowinska, M. Friedrich, A. Kazandjian, and C. Scheiber. "Comparison between three gamma cameras based on cadmium telluride and cadmium zinc telluride detector arrays." In 2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515). IEEE, 2003. http://dx.doi.org/10.1109/nssmic.2003.1352266.

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Huang, Hui, Rui-min Wan, Zeng-lin Zhao, Rong-bin Ji, and Shun-chen Pan. "Growth and structure of cadmium zinc telluride crystal." In Photorefractive Effects, Materials, and Devices. Washington, D.C.: OSA, 2005. http://dx.doi.org/10.1364/pemd.2005.26.

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Bhattacharya, Rabi S., P. He, Y. Xu, M. Goorsky, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, and Yevgeniy V. Kondratenko. "Ion Beam Layer Separation of Cadmium Zinc Telluride." In ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology. AIP, 2008. http://dx.doi.org/10.1063/1.3033597.

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Perry, Dale L., and Larry Franks. "Model compounds for cadmium zinc telluride (CZT) impurities." In Optical Engineering + Applications, edited by Arnold Burger, Larry A. Franks, and Ralph B. James. SPIE, 2008. http://dx.doi.org/10.1117/12.798941.

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Reports on the topic "Cadmium zinc telluride (CdZnTe"

1

Roy, U. N., G. S. Camarda, Y. Cui, R. Gul, A. Hossain, and G. Yang. Cadmium Zinc Telluride Selenide (CdZnTeSe) A promising low cost alternative to Cadmium Zinc Telluride (CdZnTe) for medical imaging and nuclear detector applications. Office of Scientific and Technical Information (OSTI), June 2017. http://dx.doi.org/10.2172/1376113.

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Chu, T. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Office of Scientific and Technical Information (OSTI), October 1989. http://dx.doi.org/10.2172/5657996.

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Toney, J. E., R. B. James, and A. Antolak. Cadmium zinc telluride charged particle nuclear detectors. Office of Scientific and Technical Information (OSTI), February 1997. http://dx.doi.org/10.2172/475591.

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Namboodiri, M. N., A. D. Lavietes, and J. H. McQuaid. Gamma-ray peak shapes from cadmium zinc telluride detectors. Office of Scientific and Technical Information (OSTI), September 1996. http://dx.doi.org/10.2172/392720.

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Bolotnikov, Aleksey. R200 Spectrometer with Frisch-grid Cadmium Zinc Telluride (CZT). Office of Scientific and Technical Information (OSTI), May 2019. http://dx.doi.org/10.2172/1514377.

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Chu, T. L. Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991. Office of Scientific and Technical Information (OSTI), April 1992. http://dx.doi.org/10.2172/10146244.

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Chu, T. L. Thin Film Cadmium Telluride, Zinc Telluride, and Mercury Zinc Telluride Solar Cells, Final Subcontract Report, 1 July 1988 - 31 December 1991. Office of Scientific and Technical Information (OSTI), April 1992. http://dx.doi.org/10.2172/5353308.

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D. W. Akers. Induced Positron Annihiliation Investigation of Cadmium Zinc Telluride Crystal Microstructures. Office of Scientific and Technical Information (OSTI), June 2005. http://dx.doi.org/10.2172/911691.

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Ruhter, W. D., and R. Gunnink. Application of cadmium-zinc-telluride detectors in U-235 enrichment measurements. Office of Scientific and Technical Information (OSTI), April 1994. http://dx.doi.org/10.2172/10163810.

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B. A. Brunett, J. C. Lund, J. M. Van Scyoc, N. R. Hilton, E. Y. Lee, and R. B. James. Low-cost cadmium zinc telluride radiation detectors based on electron-transport-only designs. Office of Scientific and Technical Information (OSTI), January 1999. http://dx.doi.org/10.2172/751018.

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