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Journal articles on the topic 'Capacitors. Dielectrics. Hafnium oxide'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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1

Nabatame, Toshihide, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, and Akihiko Ohi. "Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors." Applied Physics Express 12, no. 1 (January 1, 2019): 011009. http://dx.doi.org/10.7567/1882-0786/aaf62a.

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2

Karmaoui, Mohamed, E. Venkata Ramana, David M. Tobaldi, Luc Lajaunie, Manuel P. Graça, Raul Arenal, Maria P. Seabra, João A. Labrincha, and Robert C. Pullar. "High dielectric constant and capacitance in ultrasmall (2.5 nm) SrHfO3 perovskite nanoparticles produced in a low temperature non-aqueous sol–gel route." RSC Advances 6, no. 57 (2016): 51493–502. http://dx.doi.org/10.1039/c6ra06990h.

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3

Kim, Hyojung, Jongwoo Park, Junehwan Kim, Nara Lee, Gaeun Lee, Soonkon Kim, Pyungho Choi, Dohyun Beak, Jangkun Song, and Byoungdeog Choi. "Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1966–70. http://dx.doi.org/10.1166/jnn.2021.18901.

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Use of thinner oxides to improve the operating speed of a complementary metal-oxidesemiconductor (CMOS) device causes serious gate leakage problems. Leakage current of the dielectric analysis method has I–V, C–V, and charge pumping, but the procedure is very complicated. In this premier work, we analyzed the leakage current of metal insulator semiconductor (MIS) capacitors with different initiators through low-frequency noise (LFN) measurement with simplicity and high sensitivity. The LFN measurement results show a correlation between power spectral density (SIG) and gate leakage current (IG). MIS capacitors of hafnium zirconium silicate (HZS, (HfZrO4)1-x (SiO2)x) were used for the experiments with varying SiO2 ratio (x = 0, 0.1, 0.2) of hafnium zirconium oxide (HZO, HfZrO4). As the SiO2 ratio increased, the leakage current decreased according to J–V measurement. Further, the C–V measurement confirmed that the oxide-trapped charge (Not) increased with increasing SiO2 ratio. Finally, the LFN measurement method revealed that the cause of leakage current reduction was trap density reduction of the insulator.

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4

Kim, Tea Wan, Tae-Young Jang, Donghyup Kim, Jung Woo Kim, Jae Kyeong Jeong, Rino Choi, Myung Soo Lee, and Hyoungsub Kim. "Effect of La incorporation on reliability characteristics of metal–oxide-semiconductor capacitors with hafnium based high-k dielectrics." Microelectronic Engineering 89 (January 2012): 31–33. http://dx.doi.org/10.1016/j.mee.2011.01.036.

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5

Choi, Kyu-Jeong, Woong-Chul Shin, and Soon-Gil Yoon. "Ultrathin HfO2 gate dielectric grown by plasma-enhanced chemical vapor deposition using Hf[OC(CH3)3]4 as a precursor in the absence of O2." Journal of Materials Research 18, no. 1 (January 2003): 60–65. http://dx.doi.org/10.1557/jmr.2003.0009.

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Hafnium oxide thin films for use in a gate dielectric were deposited at 300 °C on p-type Si(100) substrates using a Hf[OC(CH3)3]4 precursor in the absence of oxygen by plasma-enhanced chemical vapor deposition. A comparison of films deposited in the absence and presence of oxygen indicated that oxygen was an important determinant in the electrical properties of HfO2 films, which were subsequently annealed in N2 and O2 ambients. The capacitance equivalent oxide thickness of the as-deposited Pt/HfO2/Si capacitor was approximately 17 Å and abruptly increased at an annealing temperature of 800 °C in both N2 and O2 ambients. The hysteresis of the as-deposited gate dielectric was quite small, about 40 mV, and that of the gate dielectric annealed at 800 °C in an O2 ambient was reduced to a negligible level, about 20 mV. The interface trap density of the Pt/HfO2/Si capacitors was approximately 1012 eV−1 cm−2 near the silicon midgap. The leakage current densities of the as-deposited Pt/HfO2/Si capacitor and those annealed at 800 °C in N2 and O2 were approximately 8 × 10−4, 8 × 10−5, and 3 × 10−7 A/cm2 at –1 V, respectively.

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6

Chiou, Yan-Kai, Che-Hao Chang, and Tai-Bor Wu. "Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors." Journal of Materials Research 22, no. 7 (July 2007): 1899–906. http://dx.doi.org/10.1557/jmr.2007.0242.

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The growth of HfO2 thin films on a HF-dipped p-Si(100) substrate at 200 °C by atomic-layer deposition (ALD) using Hf[N(C2H5)(CH3)]4 and H2O vapor as precursors is demonstrated. Uniform HfO2 thin films are obtained on a 4-in. silicon wafer, and the energy-band gap and band offset are determined by x-ray photoelectron spectroscopy analysis. The as-deposited HfO2 thin film is amorphous and able to crystallize at 500 ∼ 600 °C with only the monoclinic phase. As for the electrical performance of Au–Ti–HfO2–Si metal oxide semiconductor capacitors, a dielectric constant of ∼17.8 and an equivalent oxide thickness value of ∼1.39 nm are obtained from the 40-cycle ALD film after annealing at 500 °C. In addition, the breakdown field is in the range of 5 ∼ 5.5 MV/cm, and the fixed charge density is on the order of 1012 cm−2, depending on the annealing temperatures. The interface quality of HfO2 thin films on silicon is satisfactory with an interface-trap charge density of ∼3.7 × 1011 cm−2 eV−1.

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7

Abdulazhanov, Sukhrob, Quang Huy Le, Dang Khoa Huynh, Defu Wang, Maximilian Lederer, Ricardo Olivo, Konstantin Mertens, Jennifer Emara, Thomas Kämpfe, and Gerald Gerlach. "RF-Characterization of HZO Thin Film Varactors." Crystals 11, no. 8 (August 18, 2021): 980. http://dx.doi.org/10.3390/cryst11080980.

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A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.

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8

DONG, MING, HAO WANG, LIANGPING SHEN, CONG YE, and QINXIANG WEI. "EFFECT OF GATE ELECTRODES ON STRUCTURE AND ELECTRICAL PROPERTIES OF SPUTTERED HfO2 THIN FILMS." Modern Physics Letters B 26, no. 25 (September 7, 2012): 1250161. http://dx.doi.org/10.1142/s0217984912501618.

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High dielectric hafnium oxide films were grown by magnetron sputtering and post heat treatment in nitrogen atmosphere at 500°C for 30 min using vacuum annealing furnace. The film keeps amorphous at 500°C and has better interface quality as revealed by X-ray diffraction and transmission electron microscopy. The influence of TiN and Pt electrodes on the electrical property of the film was compared. For the annealed films, TiN electrode was presented as the optimal one. For the conduction mechanism of Pt / HfO 2/p- Si MOS capacitors under gate electron injection, the dominant conduction mechanism at low electric field is Schottky emission. At high electric field, the conversion of current transport mechanism from Schottky emission to trap-assisted tunneling for the annealed HfO 2 film occurs at 0.64 MV/cm.

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9

Beal, Aubrey N., John Tatarchuk, Colin Stevens, Thomas Baginski, Michael Hamilton, and Robert N. Dean. "Design Considerations and Ring-down Characteristics of Micromachined, High Current Density Capacitors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (January 1, 2014): 001380–406. http://dx.doi.org/10.4071/2014dpc-wa32.

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The need for integrated passive components which meet the stringent power system requirements imposed by increased data rates, signal path density and challenging power distribution network topologies in integrated systems yield diverse motivations for high density, miniaturized capacitors capable of quickly sourcing large quantities of current. These diverse motivations have led to the realization of high density capacitor structures through the means of several technologies. These structures have been evaluated as high-speed, energy storage devices and their respective fabrication technologies have been closely compared for matching integrated circuit speed and density increase, chip current requirements, low resistance, low leakage current, high capacitance and compatibility with relatively high frequencies of operation (~1GHz). These technologies include devices that utilize pn junctions, Schottky barriers, optimized surface area techniques and the utilization of high dielectric constant (high-K) materials, such as hafnium oxide, as a dielectric layer through the means of atomic layer deposition (ALD). The resulting devices were micro-machined, large surface area, thin, high-density capacitor technologies optimized as embedded passive devices for thin silicon interposers. This work outlines the design, fabrication, simulation and testing of each device revision using standard silicon microfabrication processes and silicon interposer technologies. Consequently, capacitive storage devices were micro-machined with geometries which maximize surface area and exhibit the capability of sourcing 100A of current with a response time greater than 100 A/nsec through the use of thin layered, ALD high-K materials. The simulation and testing of these devices show general agreement when subjected to a standard ring-down procedure. This paper provides descriptions and design challenges encountered during fabrication, testing and integration of these passive devices. In addition, potential device integration and implementation strategies for use in silicon interposers are also provided. The modification and revision of several device generations is documented showing increased device capacitance density, maximized current capabilities and minimized effects of series inductance and resistance. The resulting structures are thin, capacitive devices that may be micro-machined using industry standard Si MEMS processes and are compatible with Si interposer 3D technologies. The subsequent design processes allow integrated passive components to be attached beneath chips in order to maximize system area and minimize the chip real estate required for capacitive energy storage devices.

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10

Chen, Jun, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, and Keisaku Yamada. "Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current." Applied Physics Letters 92, no. 26 (June 30, 2008): 262103. http://dx.doi.org/10.1063/1.2952829.

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11

Wadsworth, H. J., S. Bhattacharya, D. W. McNeill, F. H. Ruddell, B. M. Armstrong, H. S. Gamble, and D. Denvir. "Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectrics." Materials Science in Semiconductor Processing 9, no. 4-5 (August 2006): 685–89. http://dx.doi.org/10.1016/j.mssp.2006.08.052.

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12

Frank, Martin M., Steven J. Koester, Matthew Copel, John A. Ott, Vamsi K. Paruchuri, Huiling Shang, and Rainer Loesing. "Hafnium oxide gate dielectrics on sulfur-passivated germanium." Applied Physics Letters 89, no. 11 (September 11, 2006): 112905. http://dx.doi.org/10.1063/1.2338751.

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13

Lu, Jiang, Yue Kuo, and Jun-Yen Tewg. "Hafnium-Doped Tantalum Oxide High-k Gate Dielectrics." Journal of The Electrochemical Society 153, no. 5 (2006): G410. http://dx.doi.org/10.1149/1.2180647.

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14

Nguyen, T., C. Busseret, L. Militaru, A. Poncet, D. Aimé, N. Baboux, and C. Plossu. "Parameters extraction of hafnium based gate oxide capacitors." Microelectronics Reliability 47, no. 4-5 (April 2007): 729–32. http://dx.doi.org/10.1016/j.microrel.2007.01.061.

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15

Zeng, Qingfeng, Artem R. Oganov, Andriy O. Lyakhov, Congwei Xie, Xiaodong Zhang, Jin Zhang, Qiang Zhu, et al. "Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides." Acta Crystallographica Section C Structural Chemistry 70, no. 2 (January 9, 2014): 76–84. http://dx.doi.org/10.1107/s2053229613027861.

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High-kdielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-kdielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures – these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2–SiO2system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-kdielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

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16

DeCerbo, J. N., K. R. Bray, and J. N. Merrett. "Analysis of multilayered, nitrogen-doped aluminum oxide and hafnium oxide dielectric films for wide-temperature capacitor applications." Thin Solid Films 590 (September 2015): 71–75. http://dx.doi.org/10.1016/j.tsf.2015.07.047.

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17

Hwang, Yoontae, Mark A. Wistey, Joël Cagnon, Roman Engel-Herbert, and Susanne Stemmer. "Metal-oxide-semiconductor capacitors with erbium oxide dielectrics on In0.53Ga0.47As channels." Applied Physics Letters 94, no. 12 (March 23, 2009): 122907. http://dx.doi.org/10.1063/1.3106618.

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18

Fazan, P. C., V. K. Mathews, H. C. Chan, and A. Ditali. "Ultrathin oxide-nitride dielectrics for rugged stacked DRAM capacitors." IEEE Electron Device Letters 13, no. 2 (February 1992): 86–88. http://dx.doi.org/10.1109/55.144967.

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19

Chojecki, Paul, Glen Walters, Zane Forrester, and Toshikazu Nishida. "Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors." Journal of Applied Physics 130, no. 9 (September 7, 2021): 094102. http://dx.doi.org/10.1063/5.0053185.

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20

Kim, Dae-Cheol, and Young-Geun Ha. "Self-Assembled Hybrid Gate Dielectrics for Ultralow Voltage of Organic Thin-Film Transistors." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1761–65. http://dx.doi.org/10.1166/jnn.2021.19083.

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We developed self-assembled hybrid dielectric materials via a facile and low-temperature solution process. These dielectrics are used to facilitate ultralow operational voltage of organic thinfilm transistors. Self-assembly of bifunctional phosphonic acid and ultrathin hafnium oxide layers results in the self-assembled hybrid dielectrics. Additionally, the surface property of the top layer of hafnium oxide can be tuned by phosphonic acid-based self-assembled molecules to improve the function of the organic semiconductors. These novel hybrid dielectrics demonstrate great dielectric properties as low-level leakage current densities of <1.45×10−6 A/cm2, large capacitances (up to 800 nF/cm2), thermal stability (up to 300 °C), and featureless morphology (root-mean-square roughness ˜0.3 nm). As a result, self-assembled gate dielectrics can be incorporated into thin-film transistors with p-type organic semiconductors functioning at ultralow voltages (<-2 V) to achieve enhanced performance (hole mobility: 0.88 cm2/V·s, and Ion/Ioff: > 105, threshold voltage: 0.5 V).

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21

Meena, Jagan Singh, Min-Ching Chu, Jitendra N. Tiwari, Hsin-Chiang You, Chung-Hsin Wu, and Fu-Hsiang Ko. "Flexible metal–insulator–metal capacitor using plasma enhanced binary hafnium–zirconium–oxide as gate dielectric layer." Microelectronics Reliability 50, no. 5 (May 2010): 652–56. http://dx.doi.org/10.1016/j.microrel.2010.01.046.

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22

Mallik, S., C. Mahata, M. K. Hota, C. K. Sarkar, and C. K. Maiti. "Si1−xGex metal-oxide-semiconductor capacitors with HfTaOx gate dielectrics." Thin Solid Films 520, no. 1 (October 2011): 101–5. http://dx.doi.org/10.1016/j.tsf.2011.06.057.

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23

Krylov, Igor, Dan Ritter, and Moshe Eizenberg. "HfxAlyO ternary dielectrics for InGaAs based metal-oxide-semiconductor capacitors." Journal of Applied Physics 122, no. 3 (July 21, 2017): 034505. http://dx.doi.org/10.1063/1.4993905.

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24

Hiergeist, P., A. Spitzer, and S. Rohl. "Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAMs." IEEE Transactions on Electron Devices 36, no. 5 (May 1989): 913–19. http://dx.doi.org/10.1109/16.299673.

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25

Chen, Yi Wei, Maozi Liu, Tetsuya Kaneko, and Paul C. McIntyre. "Atomic Layer Deposited Hafnium Oxide Gate Dielectrics for Charge-Based Biosensors." Electrochemical and Solid-State Letters 13, no. 3 (2010): G29. http://dx.doi.org/10.1149/1.3280224.

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26

Kim, Young-Bae, Moon-Soo Kang, Taeho Lee, Jinho Ahn, and Duck-Kyun Choi. "Characterization of atomic-layer-deposited hafnium oxide/SiON stacked-gate dielectrics." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 5 (2003): 2029. http://dx.doi.org/10.1116/1.1603286.

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27

Liu, M., Q. Fang, G. He, L. Q. Zhu, and L. D. Zhang. "Characterization of HfOxNy gate dielectrics using a hafnium oxide as target." Applied Surface Science 252, no. 24 (October 2006): 8673–76. http://dx.doi.org/10.1016/j.apsusc.2005.12.003.

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28

Lu, Jiang, and Yue Kuo. "Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness." Applied Physics Letters 87, no. 23 (December 5, 2005): 232906. http://dx.doi.org/10.1063/1.2140482.

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29

Raghu, Prashant, Niraj Rana, Chris Yim, Eric Shero, and Farhang Shadman. "Adsorption of Moisture and Organic Contaminants on Hafnium Oxide, Zirconium Oxide, and Silicon Oxide Gate Dielectrics." Journal of The Electrochemical Society 150, no. 10 (2003): F186. http://dx.doi.org/10.1149/1.1605747.

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30

Birge, Adam, Chen-Han Lin, and Yue Kuo. "Memory Functions of Nanocrystalline Indium Tin Oxide Embedded Zirconium-Doped Hafnium Oxide MOS Capacitors." Journal of The Electrochemical Society 154, no. 10 (2007): H887. http://dx.doi.org/10.1149/1.2768291.

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31

Frank, Martin M., Safak Sayan, Sabine Dörmann, Thomas J. Emge, Leszek S. Wielunski, Eric Garfunkel, and Yves J. Chabal. "Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects." Materials Science and Engineering: B 109, no. 1-3 (June 2004): 6–10. http://dx.doi.org/10.1016/j.mseb.2003.10.020.

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32

Kuo, Yue, Jiang Lu, Jiong Yan, Tao Yuan, Hyun Chul Kim, Jeff Peterson, Mark Gardner, S. Chatterjee, and W. Luo. "Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics." ECS Transactions 1, no. 5 (December 21, 2019): 447–54. http://dx.doi.org/10.1149/1.2209294.

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33

García, H., S. Dueñas, H. Castán, A. Gómez, L. Bailón, R. Barquero, K. Kukli, M. Ritala, and M. Leskelä. "Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 1 (2009): 416. http://dx.doi.org/10.1116/1.3021040.

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34

McNeill, D. W., S. Bhattacharya, H. Wadsworth, F. H. Ruddell, S. J. N. Mitchell, B. M. Armstrong, and H. S. Gamble. "Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates." Journal of Materials Science: Materials in Electronics 19, no. 2 (July 6, 2007): 119–23. http://dx.doi.org/10.1007/s10854-007-9337-y.

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35

Yan, Jiong, Yue Kuo, and Jiang Lu. "Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering." Electrochemical and Solid-State Letters 10, no. 7 (2007): H199. http://dx.doi.org/10.1149/1.2730720.

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36

Rodriguez-Lopez, Ovidio, Edgar Guerrero Ruiz, Alexander J. Polednik, Adriana C. Duran-Martinez, Aldo Garcia-Sandoval, Walter Voit, and Gerardo Gutierrez-Heredia. "Electrical characterization of flexible hafnium oxide capacitors on deformable softening polymer substrate." Microelectronic Engineering 249 (September 2021): 111618. http://dx.doi.org/10.1016/j.mee.2021.111618.

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37

Ding, Man. "The radiation response of hafnium oxide based metal-oxide-semiconductor capacitors under 60Co gamma ray." IEEE Transactions on Dielectrics and Electrical Insulation 26, no. 1 (February 2019): 10–16. http://dx.doi.org/10.1109/tdei.2018.007316.

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38

Gao, Y. N., Y. L. Xu, J. G. Lu, J. H. Zhang, and X. F. Li. "Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors." Journal of Materials Chemistry C 3, no. 43 (2015): 11497–504. http://dx.doi.org/10.1039/c5tc02485d.

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Novel solution-processed amorphous high-k dielectrics for thin film transistors (TFTs) have been systemically studied with the objective of achieving high performance and reducing costs for the next generation displays.

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39

Lederer, Maximilian, Konstantin Mertens, Alireza M. Kia, Jennifer Emara, Ricardo Olivo, Yannick Raffel, David Lehninger, et al. "Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide." MRS Advances 6, no. 21 (July 13, 2021): 525–29. http://dx.doi.org/10.1557/s43580-021-00102-4.

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Abstract Reliability is a central aspect of hafnium oxide-based ferroelectric field effect transistors (FeFETs), which are promising candidates for embedded non-volatile memories. Besides the device performance, understanding the evolution of the ferroelectric behaviour of hafnium oxide over its lifetime in FeFETs is of major importance for further improvements. Here, we present the impact of the interface layer in FeFETs on the cycling behaviour and retention of ferroelectric silicon-doped hafnium oxide. Thicker interfaces are demonstrated to reduce the presence of antiferroelectric-like wake-up effects and to improve endurance. However, they show a strong destabilisation of one polarisation state in terms of retention. In addition, measurements of the Preisach density revealed additional insight in the wake-up effect of these metal-ferroelectric-insulator-semiconductor (MFIS) capacitors. Graphic abstract

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40

Shih, C. F., K. T. Hung, C. Y. Hsiao, S. C. Shu, and W. M. Li. "Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics." Journal of Alloys and Compounds 480, no. 2 (July 2009): 541–46. http://dx.doi.org/10.1016/j.jallcom.2009.01.141.

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41

Dueñas, S., H. Castán, H. García, A. Gómez, L. Bailón, M. Toledano-Luque, I. Mártil, and G. González-Díaz. "Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-kgate dielectrics." Semiconductor Science and Technology 22, no. 12 (November 15, 2007): 1344–51. http://dx.doi.org/10.1088/0268-1242/22/12/019.

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42

Vandelli, Luca, Andrea Padovani, Luca Larcher, and Gennadi Bersuker. "Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics." IEEE Transactions on Electron Devices 60, no. 5 (May 2013): 1754–62. http://dx.doi.org/10.1109/ted.2013.2255104.

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43

Beverina, Alessio, M. M. Frank, H. Shang, S. Rivillon, F. Amy, C. L. Hsueh, V. K. Paruchuri, et al. "High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation." Solid State Phenomena 103-104 (April 2005): 3–6. http://dx.doi.org/10.4028/www.scientific.net/ssp.103-104.3.

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We review the impact of semiconductor surface preparation on the performance of metal-oxidesemiconductor field-effect transistor (MOSFET) gate stacks. We discuss high-permittivity dielectrics such as hafnium oxide and aluminum oxide on silicon and on the high carrier mobility substrate germanium. On Si, scaling of the gate stack is the prime concern. On Ge, fundamental issues of chemical and electrical passivation need to be resolved. Surface treatments considered include oxidation, nitridation, hydrogenation, chlorination, and organic functionalization.

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44

Park, Areum, Pyungho Choi, Woojin Jeon, Donghyeon Lee, Donghee Choi, and Byoungdeog Choi. "Defect Analysis and Reliability Characteristics of (HfZrO4)1−x(SiO2)x High-κ Dielectrics." Journal of Nanoscience and Nanotechnology 20, no. 11 (November 1, 2020): 6718–22. http://dx.doi.org/10.1166/jnn.2020.18791.

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Hafnium zirconium silicon oxide ((HfZrO4)1−x(SiO2)x) materials were investigated through the defect analysis and reliability characterization for next generation high-κ dielectric. Silicate doped hafnium zirconium oxide (HfZrO4) films showed a reduction of negative flat-band voltage (Vfb) shift compared to pure HfZrO4. This result was caused by a decrease in donor-like interface traps (Dit) and positive border traps (Nbt). As the silicon oxide (SiO2) content increased, the Vfb was shifted in the positive direction from −1.23 to −1.10 to −0.91 V and the slope of the capacitance–voltage (C–V) curve increased. The nonparallel shift of the C–V characteristics was affected by the Dit, while the Nbt was responsible for the parallel C–V curve shift. The values of Dit reduced from 4.3 × 1011, 3.5 × 1011, and 3.0 × 1011 cm−2eV−1, as well as the values of Nbt were decreased from 5.24, 3.90 to 2.26 × 1012 cm−2. Finally, reduction of defects in the HfZrO4-base film with an addition of SiO2 affected the gate oxide reliability characteristics, such as gate leakage current (JG), bias temperature stress instability (BTSI), and time dependent gate dielectric breakdown (TDDB).

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Byun, Hye-Ran, and Young-Geun Ha. "UV-Cured Hafnium Oxide-Based Gate Dielectrics for Low-Voltage Organic and Amorphous Oxide Thin-Film Transistors." Journal of Nanoscience and Nanotechnology 19, no. 7 (July 1, 2019): 4249–53. http://dx.doi.org/10.1166/jnn.2019.16329.

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Han, Dedong, Jinfeng Kang, Changhai Lin, and Ruqi Han. "Reliability characteristics of high-K gate dielectrics HfO2 in metal-oxide semiconductor capacitors." Microelectronic Engineering 66, no. 1-4 (April 2003): 643–47. http://dx.doi.org/10.1016/s0167-9317(02)00977-2.

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Lo, G. Q., D. L. Kwong, and S. Lee. "Reliability characteristics of metal‐oxide‐semiconductor capacitors with chemical vapor deposited Ta2O5gate dielectrics." Applied Physics Letters 62, no. 9 (March 1993): 973–75. http://dx.doi.org/10.1063/1.108537.

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Iglesias, V., M. Porti, M. Nafría, X. Aymerich, P. Dudek, and G. Bersuker. "Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 1 (January 2011): 01AB02. http://dx.doi.org/10.1116/1.3532945.

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Esro, Mazran, George Vourlias, Christopher Somerton, William I. Milne, and George Adamopoulos. "High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics." Advanced Functional Materials 25, no. 1 (November 10, 2014): 134–41. http://dx.doi.org/10.1002/adfm.201402684.

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Cheng, S. C., A. Hitomi, and C. A. Randall. "Determination of the Site Occupancy of Holmium in SrTiO3 by Alchemi." Microscopy and Microanalysis 4, S2 (July 1998): 582–83. http://dx.doi.org/10.1017/s1431927600023035.

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The perovskite structure is based upon the mineral CaTiO3, which is a pseadocubic at room temperature. The ideal structure has a twelve fold coordinate A-site, and an octahedral coordinated B-site, and the face-centered position being oxygen. The perovskites have been of commercial interest for capacitors owing to their high dielectric constants. The crystal chemistry related to the perovskite based dielectrics multilayer capacitors (MLCs) is of interest in this paper. The MLCs with base metal internal electrodes such as copper and nickel have been studied for many years. To avoid oxidation of the nickel or copper electrodes during sintering, a reducing atmosphere is necessary. However, reduced firing causes two basic problems: an increasing of conductivity of the BaTiO3, dielectrics and limitation on reliability by the migration of oxygen vacancies. The solution for the first problem is to use acceptor dopants, such as MnO and more stable oxide additives, such as CaZrO3 to increase the resistivity of the dielectrics.

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