Academic literature on the topic 'Carbure de silcium - SiC'
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Journal articles on the topic "Carbure de silcium - SiC":
Nguyen, Denis, Hossein Davarzani, and Frederik Maldan. "Conductivité thermique du carbure de silicium (SiC) et de l’alumine (Al2O3) sous forme granulaire sèche." Matériaux & Techniques 104, no. 3 (2016): 301. http://dx.doi.org/10.1051/mattech/2016016.
Mengeot, C., B. Guizard, S. Poissonnet, L. Boulanger, M. Le Flem, F. Guillard, and F. Ténégal. "Frittage par compression isostatique à chaud (CIC) et spark plasma sintering (SPS) de nanoparticules en carbure de silicium (SiC) synthétisées à échelle pilote par pyrolyse laser." Matériaux & Techniques 95, no. 4-5 (2007): 289–96. http://dx.doi.org/10.1051/mattech:2008013.
RAYNAUD, Christophe. "Propriétés physiques et électroniques du carbure de silicium (SiC)." Conversion de l'énergie électrique, May 2007. http://dx.doi.org/10.51257/a-v1-d3119.
Camassel, Jean, and Sylvie Contreras. "Matériaux semiconducteurs à grand gap : le carbure de silicium (SiC)." Électronique, August 2012. http://dx.doi.org/10.51257/a-v2-e1990.
Dissertations / Theses on the topic "Carbure de silcium - SiC":
Abou, Hamad Valdemar. "Elaboration et caractérisation de contacts électriques à base de phases MAX sur SiC pour l'électronique haute température." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI079.
Power applications in which the ambient temperature is high, cause the increase of temperature in electronic components. Therefore, it is important to develop electronic devices that are able to withstand high current and high-power densities. In this thesis, our objective is to lay the foundations of a new technology for the manufacture of a new generation of Ti3SiC2 MAX phase-based electrical contacts, stable, reliable and reproducible on Silicon Carbide for very high temperature applications (300 - 600ºC). To synthesize Ti3SiC2 on SiC, two elaboration methods were studied in this thesis. The first approach is a reaction method, and the second approach consists on using a Ti3SiC2 target via the Pulsed Laser Deposition (PLD) technique. Our goal is to develop a good quality ohmic contacts. Physico-chemical, electrical (TLM) and mechanical (W-H and RSM) characterizations were performed on the Ti3SiC2 contacts. These samples underwent a thermal aging test at 600°C for 1500 hours under Argon, in order to study the stability and reliability of the electrical contacts at high temperatures. The obtained results showed that the reliability and the chemical stability between Ti3SiC2 and SiC allowed the contacts to keep an ohmic behavior with low electrical resistivity, in addition to a good mechanical behavior, even after 1500 hours of aging at 600ºC. Furthermore, the thermomechanical simulations performed were used to determine the effects of Interfacial Thermal Resistances on the heat dissipation and the mechanical stresses exerted on a high power PN diode. In this thesis, we have shown that an ohmic contact, based on Ti3SiC2, can remain stable and reliable on a 4H-SiC substrate, in temperatures up to 600ºC
Boutry, Arthur. "Theoretical and experimental evaluation of the Integrated gate-commutated thyristor (IGCT) as a switch for Modular Multi Level Converters (MMC)." Thesis, Lyon, 2021. http://www.theses.fr/2021LYSEI095.
A study on Integrated gate-commutated thyristors (IGCT) di/dt limiting inductance and RCD-clamp reduction/suppression using plastic module silicon (Si) fast recovery diodes and silicon carbide (SiC) diodes, in Modular Multilevel Converters (MMC). This PhD contains:- Analysis of existing HVDC MMC Submodules.- Assessment of the interest of the IGCT in HVDC MMC Submodules and losses comparison with IGBTs, using MMC-specific figures-of-merit created in this thesis.- Double pulse test with fast recovery diode in plastic module to attempt to reduce and suppress the limiting di/dt inductor.- Packaging of High-Voltage High-Current SiC PiN diode dies, test with IGCT in the same setup to attempt to reduce and suppress the limiting di/dt inductor and analyze the specificities of the SiC diode in this setup
Song, Xi. "Activation des dopants implantés dans le carbure de silicium (3C-SiC et 4H-SiC)." Thesis, Tours, 2012. http://www.theses.fr/2012TOUR4019/document.
This work was dedicated to the activation of implanted dopants in 3C-SiC and 4H-SiC. The goal is to propose optimized process conditions for n-type implantation in 3C-SiC and for p-type in 4H-SiC.We have first studied the n-type implantation in 3C-SiC. To do so, N, P implantations, N&P co-implantation and the associated annealings were performed. The nitrogen implanted sample, annealed at 1400°C-30 min evidences a dopant activation rate close to 100% while maintaining a good crystal quality. Furthermore, the electrical properties of extended defects in 3C-SiC have been studied. Using the SSRM measurements, we have evidenced for the first time that these defects have a very high electrical activity and as a consequence on future devices.Then, we have realized a study on p-type doping by Al implantation in 4H-SiC with different implantation and annealing temperatures. Al implantation at 200°C followed by an annealing at 1850°C-30min lead to the best results in terms of physical and electrical properties
Balloud, Carole. "Méthodes de caractérisation optique de SiC." Montpellier 2, 2005. http://www.theses.fr/2005MON20193.
Berdoyes, Inès. "Interactions entre le silicium liquide et le carbure de silicium, application au composite SiC/SiC." Thesis, Bordeaux, 2018. http://www.theses.fr/2018BORD0113/document.
Increase of the air traffic and recent environmental standards require the reduction of the energy consumption and gas emission of the new aircraft engines. For this purpose, new materials have been developed.Lighter, chemically inert and suitable for high temperature applications, the Ceramic Matrix Composites SiC/SiC are promising materials for replacing some of the metallic turbine engine pieces and improving energy efficiency.From now on, CMC matrix was mainly elaborated by Ceramic Chemical Vapor Infiltration (CVI). However, this process is slow and costly, and the residual porosity is high. Then, the infiltration of liquid silicon (Melt Infiltration) in a SiC fibrous preform, coated with SiC (SiCCVI), and densified by SiC powders (SiCp) is an alternative route to full CVI.Even if liquid silicon (SiL) should fill the pores of the preform without reacting with SiC, local interactions have been noticed between the liquid silicon and the Sic deposit, which is deleterious to the final material mechanical properties. Therefore, this thesis aims at understanding the interactions SiL- SiCCVI and identifying the main parameters. This requires beforehand to characterize deeply and precisely the microstructure of the SiCCVI. Thereafter, research will focus on the control of the SiL- SiCCVI interactions
Ferro, Gabriel. "CROISSANCE EPITAXIALE DU CARBURE DESILICIUM A BASSE TEMPERATURE." Habilitation à diriger des recherches, Université Claude Bernard - Lyon I, 2006. http://tel.archives-ouvertes.fr/tel-00136241.
croître SiC en dessous de cette température tout en gardant une qualité de matériau (cristallinité et dopage) satisfaisante est un véritable défi dont les intérêts industriels sont évidents.
Cet objectif peut être atteint en utilisant des techniques en solution, sous gradient thermique
ou par mécanisme vapeur-liquide-solide (VLS). Différents bains et différentes configurations
de croissance ont été envisagés. Cette étude a permis de mieux cerner les difficultés de mise en oeuvre, de justifier les solutions techniques proposées et de sélectionner les alliages Al-Si comme meilleurs candidats. A partir de ces bains, l'homoépitaxie des polytypes hexagonaux (4H et 6H-SiC) a été démontrée pour des températures aussi basses que 1100°C. Les couches sont très fortement dopées p, par l'incorporation massive d'Al, de bonne qualité cristalline et assez rugueuses. Ce fort dopage p confère des propriétés électriques très intéressantes
notamment en terme d'abaissement de la résistivité de contact.
Le polytype cubique (ou 3C-SiC) ne disposant pas de substrats commerciaux de qualité suffisante, sa croissance a été réalisée par hétéroépitaxie sur substrat de Si(100) et a-SiC(0001) non désorientés, respectivement par EPV et VLS. L'EPV sur substrat de Si produit des couches de qualité cristalline médiocre en raison du fort désaccord de maille. La courbure
importante des plaques, résultant des contraintes thermiques, peut être diminuée en modifiant
l'étape de carburation. Un tel matériau pourra trouver des débouchés avec des composants peu
exigeants en qualité cristalline. Enfin, les alliages à base de Ge et Sn se sont montrés adaptés à
la germination du polytype 3C-SiC sur substrats hexagonaux. Des conditions de croissances
permettant d'éliminer les parois d'inversions dans les couches, ont été déterminées. Le matériau 3C ainsi épitaxié n'a pas d'équivalent ailleurs et est très prometteur pour développer un filière basée sur ce polytype.
Soueidan, Maher. "Croissance hétéroépitaxiale du SiC-3C sur substats SiC hexagonaux : analyses par faisceaux d'ions accélérés des impuretés incorporées." Lyon 1, 2006. http://tel.archives-ouvertes.fr/docs/00/13/62/31/PDF/these_soueidan.pdf.
Using silicon as substrate for growing 3C-SiC monocrystalline material generates too many defects in the layers due to lattice and thermal expansion mismatch. Though these difficulties are avoided by using hexagonal SiC substrates, the random formation of 60° rotated domains in the 3C layers generate a high density of twins. The use of vapour phase epitaxy for the growth did not allow reducing significantly the twin density despite the optimization of the in situ surface preparation of the seeds. On the other hand, these defects were eliminated by using Vapor-Liquid-Solid mechanism which consists in feeding a Si-Ge melt with propane. The characterization of these twin-free layers showed excellent crystalline quality. Some of the impurities incorporated during growth (Ge, Al, B, Sn) were successfully analysed using accelerated ion beam techniques though the detection and quantification of these elements inside SiC thin films are challenging
Nguyen, Le Minh. "Caractérisation mécanique de jonctions brasées SiC / BraSiC® / SiC et critère de dimensionnement à la rupture." Paris 6, 2011. http://www.theses.fr/2011PA066169.
Conchin, Frédéric. "Etude du comportement thermomécanique en relation avec la microstructure de matériaux à renfort fibreux SiC/C/SiC 2D." Lyon, INSA, 1994. http://www.theses.fr/1994ISAL0006.
The study of damage mechanisms and fracture behaviour of two ceramic-ceramic composite grades (2D SiC/C/SiC) is achieved by mechanical tests. These are conducted at room temperature (R. T. ), at high temperature (H. T. ) and at R. T. After ageing under different environments (vacuum, air and argon). The R curves are plotted under linear elastic behaviour assumption. At R. T. A fracture behaviour difference between two grades is exhibited : pro cess zone (large size) quasi static propagation with crack for the first one and edge effect (large bridging length) for the another one. At H. T. Degradation of the materials being observed and after ageing no significant variation is observed. The mechanical properties drops at H. T. Are due to the interface and interphase modifications and degradation fibres and to a lower extent to fibre degradation The study of R curves shows the difficulty to obtain intrinsic parameters m case of fibre composites (bridged crack). This is the reason for which a first approach based on bridging stresses crack opening dis placement relationship (μ-u curve) is proposed. The first results at R. T. And at H. T. Seem to confirm the theoretical analysis
Georges, Annick. "Oxydation sèche des réfractaires : Alumine, graphite, SiC." Nancy 1, 1986. http://www.theses.fr/1986NAN10352.
Book chapters on the topic "Carbure de silcium - SiC":
Vincent, H., C. Vincent, J. L. Ponthenier, H. Mourichoux, and J. Bouix. "Elaboration en Continu d’un Depot Mince de Carbure Refractaire en Surface des Fibres de Carbone: Caracterisation de la Fibre C/SiC." In Developments in the Science and Technology of Composite Materials, 257–64. Dordrecht: Springer Netherlands, 1989. http://dx.doi.org/10.1007/978-94-009-1123-9_35.