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Dissertations / Theses on the topic 'Carrier recombination'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 January 2025

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1

Böhme, Christoph. "Dynamics of spin-dependent charge carrier recombination." [S.l.] : [s.n.], 2003. http://archiv.ub.uni-marburg.de/diss/z2003/0183.

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2

Mickevičius, Jūras. "Carrier recombination in wide-band-gap nitride semiconductors." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20091121_102304-00016.

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The thesis is dedicated to carrier recombination investigations in wide-band-gap semiconductors and their structures. The complex experimental studies were performed by combining several different techniques. Carrier dynamics in GaN epilayers were investigated under extremely low and high excitation conditions. A new method for interpreting photoluminescence decay kinetics was suggested by interrelating luminescence and light-induced grating decay transients. The new approach for studies of yellow band in GaN was shown by linking the carrier lifetime with yellow band intensity. Two AlGaN epila

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3

Reith, Charis. "Spin relaxation and carrier recombination in GaInNAs multiple quantum wells." Thesis, University of St Andrews, 2007. http://hdl.handle.net/10023/160.

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Electron spin relaxation and carrier recombination were investigated in gallium indium nitride arsenide (GaInNAs) multiple quantum wells, using picosecond optical pulses. Pump-probe experiments were carried out at room temperature, using pulses produced by a Ti:sapphire pumped optical parametric oscillator. The peak wavelengths of the excitonic resonances for the quantum well samples were identified using linear absorption measurements, and were found to be in the range 1.25µm-1.29µm. Carrier recombination times were measured for three samples of varying nitrogen content, and were observed to

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4

Olszak, Peter D. "Nonlinear absorption and free carrier recombination in direct gap semiconductors." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4620.

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Nonlinear absorption of Indium Antimonide (InSb) has been studied for many years, yet due to the complexity of absorption mechanisms and experimental difficulties in the infrared, this is still a subject of research. Although measurements have been made in the past, a consistent model that worked for both picosecond and nanosecond pulse widths had not been demonstrated. In this project, temperature dependent two-photon (2PA) and free carrier absorption (FCA) spectra of InSb are measured using femtosecond, picosecond, and nanosecond IR sources. The 2PA spectrum is measured at room temperature w

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5

McConville, Daniel. "Carrier recombination in dilute nitride based near infrared semiconductor lasers." Thesis, University of Surrey, 2007. http://epubs.surrey.ac.uk/844606/.

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This thesis describes and quantifies the roles of the different carrier recombination processes within near infrared GaInNAs single quantum well laser devices. An initial review of the published literature relating to GaInNAs highlighted a number of areas where investigation of the material system would be interesting, including changing the nitrogen concentration, the barrier material, the incorporated strain and the growth technique. We find that at 1.3mum, at room temperature, the threshold current of MBE grown devices is composed of 70% Auger recombination, 25% monomolecular recombination

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6

GATTI, ELEONORA. "Recombination processes and carrier dynamics in Ge/SiGe multiple quantum wells." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2012. http://hdl.handle.net/10281/28451.

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Ge/SiGe quantum wells (QWs) are a new system characterized by optical and electronic properties different from those commonly observed in the more widely studied QWs based on III-V semiconductors. These peculiar properties are due to the type-I band alignment for both the Γ- and the L-type states and to the small energy distance between the direct and the indirect bad gap in Ge, which provides Ge/SiGe QWs with a so-called quasi-direct optical behavior. Moreover, these systems are of potential interest for the integration of good optical properties on the CMOS platform: indeed, room temperature

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7

Thota, Venkata Ramana Kumar. "Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1451807323.

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8

Naidu, Deepal. "Characterisation of lateral carrier out-diffusion and surface recombination in ridge waveguide devices." Thesis, Cardiff University, 2009. http://orca.cf.ac.uk/54892/.

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As laser devices are scaled down in size and involve the use of photonic structures etched through the active layer - a trend driven by the desire to improve device performance and functionality for future applications in optoelectronic integrated circuits - performance limiting mechanisms such as an increasing internal optical loss, deteriorating gain-mode overlap, lateral carrier out-diffusion and surface recombination can inflict restrictions on the further miniaturisation and overall performance. In this project I have separately evaluated the relative impact of these mechanisms using ridg

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9

Ivanov, Ruslan. "Impact of carrier localization on recombination in InGaN quantum wells with nonbasal crystallographic orientations." Doctoral thesis, KTH, Optik och Fotonik, OFO, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-214599.

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The modern InGaN technology demonstrates high efficiencies only in the blue spectral region and low current operation modes. The growth of InGaN quantum wells (QWs) on nonbasal crystallographic planes (NBP) has potential to deliver high-power blue and green light emitting diodes and lasers. The emission properties of these QWs are largely determined by the localization of carriers in the minima of spatially inhomogeneous band potential, which affects the recombination dynamics, spectral characteristics of the emission, its optical polarization and carrier transport. Understanding it is crucial

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10

Sieland, Fabian [Verfasser], and Detlef W. [Akademischer Betreuer] Bahnemann. "Fractal charge carrier recombination kinetics in photocatalytic systems / Fabian Sieland ; Betreuer: Detlef W. Bahnemann." Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2018. http://d-nb.info/1172414157/34.

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11

Sieland, Fabian Verfasser], and Detlef [Akademischer Betreuer] [Bahnemann. "Fractal charge carrier recombination kinetics in photocatalytic systems / Fabian Sieland ; Betreuer: Detlef W. Bahnemann." Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2018. http://nbn-resolving.de/urn:nbn:de:101:1-2018112901094242866616.

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12

Pattanapanishsawat, Piyapong. "Study of Surface Modification and Effect of Temperature on Charge Carrier Generation and Recombination." University of Akron / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=akron1281364113.

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13

Amaku, Afi. "A study of the electrical properties of point and extended defects in silicon." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.339355.

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14

Brandt, Matthias. "Inﬂuence of the electric polarization on carrier transport and recombination dynamics in ZnO-based heterostructures". Doctoral thesis, Universitätsbibliothek Leipzig, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-61074.

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Die vorliegende Arbeit befasst sich mit dem Einfluss der elektrischen Polarisation auf Eigenschaften freier Träger in ZnO basierten Halbleiterheterostrukturen. Dabei werden insbesondere Transporteigenschaften freier Träger sowie deren Rekombinationsdynamik untersucht. Die Arbeit behandelt vier inhaltliche Schwerpunkte. Der erste Schwerpunkt liegt auf den physikalischen Eigenschaften der verwendeten Materialen, hier wird der Zusammenhang der Bandlücke und der Gitterkonstanten von MgZnO Dünnfilmen und deren Magnesiumgehalt beschrieben. Weiterhin wird die Morphologie solcher Filme diskutiert. Auf

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15

Gasparini, Nicola [Verfasser], and Christoph J. [Gutachter] Brabec. "Controlling charge carrier recombination in ternary organic solar cells / Nicola Gasparini ; Gutachter: Christoph J. Brabec." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2017. http://d-nb.info/1136473254/34.

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16

Moen, Kurt Andrew. "Modeling of minority carrier recombination and resistivity in sige bicmos technology for extreme environment applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26642.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Cressler, John; Committee Member: Citrin, David; Committee Member: Shen, Shyh-Chiang. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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17

Michel, Christoph. "Theoretical studies of spin dependent transport phenomena [transport in magnetic semiconductors ; spin dependent charge carrier recombination]." Göttingen Cuvillier, 2007.

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18

Aytac, Yigit. "Time-resolved measurements of charge carrier dynamics in Mwir to Lwir InAs/InAsSb superlattices." Diss., University of Iowa, 2016. https://ir.uiowa.edu/etd/2039.

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All-optical time-resolved measurement techniques provide a powerful tool for investigating critical parameters that determine the performance of infrared photodetector and emitter semiconductor materials. Narrow-bandgap InAs/GaSb type-II superlattices (T2SLs) have shown great promise as next generation materials, due to superior intrinsic properties and versatility. Unfortunately, InAs/GaSb T2SLs are plagued by parasitic Shockley-Read-Hall recombination centers that shorten the carrier lifetime and limit device performance. Ultrafast pump-probe techniques and time-resolved differential-transmi

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19

Turcu, Mircea Cassian. "Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2004. http://nbn-resolving.de/urn:nbn:de:swb:14-1086247686828-95497.

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This work investigates the defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite thin films and the interrelationship with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance spectroscopy of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 chalcopyrite devices shows that the activation energies of the dominant defect d

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20

Danhof, Julia [Verfasser], and Ulrich T. [Akademischer Betreuer] Schwarz. "Local charge carrier diffusion and recombination in InGaN quantum wells = Lokale Ladungsträgerdiffusion und -rekombination in InGaN Quantentrögen." Freiburg : Universität, 2013. http://d-nb.info/1123477663/34.

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21

Turcu, Mircea Cassian. "Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys." Doctoral thesis, Technische Universität Dresden, 2003. https://tud.qucosa.de/id/qucosa%3A24342.

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This work investigates the defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite thin films and the interrelationship with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance spectroscopy of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 chalcopyrite devices shows that the activation energies of the dominant defect d

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22

Kiermasch, David [Verfasser], Vladimir [Gutachter] Dyakonov, and Christian [Gutachter] Schneider. "Charge Carrier Recombination Dynamics in Hybrid Metal Halide Perovskite Solar Cells / David Kiermasch ; Gutachter: Vladimir Dyakonov, Christian Schneider." Würzburg : Universität Würzburg, 2020. http://d-nb.info/1214594123/34.

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23

Kudriashova, Liudmila [Verfasser], Vladimir [Gutachter] Dyakonov, Sven [Gutachter] Höfling, and Bernd [Gutachter] Engels. "Photoluminescence Reveals Charge Carrier Recombination in Organic and Hybrid Semiconductors / Liudmila Kudriashova ; Gutachter: Vladimir Dyakonov, Sven Höfling, Bernd Engels." Würzburg : Universität Würzburg, 2019. http://d-nb.info/1202013635/34.

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24

Richter, Johannes Martin. "Charge carrier relaxation in halide perovskite semiconductors for optoelectronic applications." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/275568.

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Lead halide perovskites have shown remarkable device performance in both solar cells and LEDs. Whilst the research efforts so far have been mainly focussed on device optimisation, little is known about the photophysical properties. For example, the nature of the bandgap is still debated and an indirect bandgap due to a Rashba splitting has been suggested. In this thesis, we study the early-time carrier relaxation and its impact on photoluminescence emission. We first study ultrafast carrier thermalization processes using 2D electronic spectroscopy and extract characteristic carrier thermalizat

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25

Ichikawa, Shuhei. "Fundamental Study on Carrier Recombination Processes in AlGaN-related Materials and their Structural Designs toward Highly Efficient Deep-UV Emitters." 京都大学 (Kyoto University), 2017. http://hdl.handle.net/2433/225608.

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26

Turcu, Mircea C. [Verfasser]. "Defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In,Ga)(Se,S)2 alloys / Mircea C Turcu." Aachen : Shaker, 2004. http://d-nb.info/1170529550/34.

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27

Asada, Satoshi. "Improvement of ON-Characteristics in SiC Bipolar Junction Transistors by Structure Designing Based on Analyses of Material Properties and Carrier Recombination." Kyoto University, 2019. http://hdl.handle.net/2433/242510.

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28

Ringel, Brett Logan. "Investigation of Mesa Etched Antimonide Detectors Using Time Resolved Microwave Reflectance." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1589153635130203.

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29

Wehrenfennig, Christian. "Ultrafast spectroscopy of charge separation, transport and recombination processes in functional materials for thin-film photovoltaics." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:1f812413-4a2f-418f-a7fd-d749e88cc2e1.

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Dye-sensitized solar cells (DSSCs) and perovskite solar cells are emerging as promising potential low-cost alternatives to established crystalline silicon photovoltaics. Of the employed functional materials, however, many fundamental optoelectronic properties governing photovoltaic device operation are not sufficiently well understood. This thesis reports on a series of studies using ultrafast THz and photoluminescence spectroscopy on two classes of such materials, providing insight into the dynamics of charge-transport and recombination processes following photoexcitation. For TiO<sub>2</sub>

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30

Roland, Steffen [Verfasser], and Dieter [Akademischer Betreuer] Neher. "Charge carrier recombination and open circuit voltage in organic solar cells : from bilayer-model systems to hybrid multi-junctions / Steffen Roland ; Betreuer: Dieter Neher." Potsdam : Universität Potsdam, 2017. http://d-nb.info/1218402458/34.

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31

McGarry, Stephen. "Irradiated silicon particle detectors." Thesis, Lancaster University, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369468.

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32

Rauh, Daniel [Verfasser], and Vladimir [Gutachter] Dyakonov. "Impact of Charge Carrier Density and Trap States on the Open Circuit Voltage and the Polaron Recombination in Organic Solar Cells / Daniel Rauh. Gutachter: Vladimir Dyakonov." Würzburg : Universität Würzburg, 2013. http://d-nb.info/1112040021/34.

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33

López, Salas José Fabio [Verfasser], Stephan J. [Akademischer Betreuer] Heise, Jürgen [Akademischer Betreuer] Parisi, and Petra [Akademischer Betreuer] Groß. "Modeling and simulation of charge carrier recombination dynamics in Cu(In,Ga)Se2 thin-film solar cells / José Fabio López Salas ; Stephan J. Heise, Jürgen Parisi, Petra Groß." Oldenburg : BIS der Universität Oldenburg, 2018. http://d-nb.info/1161096841/34.

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34

López, Salas José Fabio Verfasser], Stephan J. [Akademischer Betreuer] Heise, Jürgen [Akademischer Betreuer] [Parisi, and Petra [Akademischer Betreuer] Groß. "Modeling and simulation of charge carrier recombination dynamics in Cu(In,Ga)Se2 thin-film solar cells / José Fabio López Salas ; Stephan J. Heise, Jürgen Parisi, Petra Groß." Oldenburg : BIS der Universität Oldenburg, 2018. http://d-nb.info/1161096841/34.

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35

Kulikovsky, Lazar. "Experimentelle Untersuchung der Ladungsträgerdynamik in photorefraktiven Polymeren." Phd thesis, Universität Potsdam, 2003. http://opus.kobv.de/ubp/volltexte/2005/130/.

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Die heutige optische Informationsverarbeitung erfordert neue Materialien, die Licht effektiv verarbeiten, steuern und speichern können. Photorefraktive (PR) Materialien sind dafür sehr interessant. In diesen Materialien entsteht bei inhomogener Beleuchtung (z.B. mit einem Intererenzmuster) über Ladungsträgergenerierung und Einfang der Ladungsträger in Fallen ein Raumladungsfeld. Dieses wird über den elektrooptischen Effekt in eine räumliche Modulation des Brechungsindex umgesetzt. Letztendlich führt somit die inhomogene Beleuchtung eines PR-Materials zu einer räumlich variierenden Änderung des

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36

Zhao, Yunhai. "Interface engineering and absorber with composition gradient for high-efficiency Kesterite solar cells." Electronic Thesis or Diss., Université de Rennes (2023-....), 2024. http://www.theses.fr/2024URENS048.

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Dans cette thèse, les propriétés de transport des porteurs de charge, le processus de croissance des grains, le mécanisme de perte de VOC et les possibilités d'amélioration du rendement des cellules solaires de CZTSSe ont été étudiés. L'importante perte de VOC et le faible facteur de remplissage des cellules solaires CZTSSe sont les principaux défis pour l'amélioration du rendement. Cela est principalement dû à la mauvaise qualité de l'interface arrière, à l'alignement non optimisé des bandes et à la présence des phases secondaires dans l'absorbeur. Trois approaches ont été utilisées dans ce t

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37

Ihlal, Ahmed. "Analyses quantitatives par sem/ebic des defauts recombinants dans les semiconducteurs polycristallins : influence des traitements thermiques sur l'activite electrique des bicristaux de silicium." Caen, 1988. http://www.theses.fr/1988CAEN2007.

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Etude quantitative , par la methode ebic, de la recombinaison des porteurs minoritaires dans des bicristaux de silicium en fonction des traitements thermiques, entre 450 et 950**(o)c. Un developpement des phenomenes physiques regissant la creation de differentes theories conduisant au traitement quantitatif du signal ebic est presente. Selon le traitement thermique, le contraste des deux types de joints de grains evolue avec la temperature: vitese de recombinaison et longueur de diffusion varient avec la temperature de recuit

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38

Chaggar, Amrik Richard. "Tunneling injection and recombination of carriers in self-assembled quantum dots." Thesis, University of Nottingham, 2009. http://eprints.nottingham.ac.uk/10757/.

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This thesis describes an experimental investigation of the resonant injection of carriers into self-assembled indium arsenide (InAs) quantum dots incorporated in the intrinsic region of gallium arsenide (GaAs) p-i-n resonant tunneling diodes, and of the resulting electroluminescence spectrum associated with carrier recombination in the quantum dots, wetting layer and GaAs matrix. A series of devices of different designs have been measured and it is shown that bipolar resonant injection, i.e. resonant injection of both electrons andholes, into the zero-dimensional states provided by the InAs qu

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39

Sangal, Vartul. "Multilocus sequence typing analyses of Salmonella enterica subspecies enterica." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2009. http://dx.doi.org/10.18452/15883.

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Serovare von Salmonella enterica subspecies enterica sind im allgemeinen pathogen für Mensch und andere Säugetiere. In dieser Arbeit habe ich anhand eines “Multilocus Sequences Typing” Typisierungsschemas die Populationsstruktur einer der am häufigsten auftretenden Serovaren dieser Subspecies, das aus Menschen und Schlachttieren isolierte Serovar Newport charakterisiert. Dieses Schema wurde auch für die Charakterisierung von Isolaten derselben Subspecies aus humanen Dauerträgern und Reptilien verwandt, um zu bestimmen, ob Isolate aus diesen Quellen sich in ihrer Populationstruktur von denjenig

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40

Haque, Saif Ahmed. "Charge recombination kinetics in dye sensitised nanocrystalline solar cells." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342251.

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41

Davies, Matthew John. "Optical studies of InGaN/GaN quantum well structures." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-ingangan-quantum-well-structures(f6c6e59b-8366-44aa-b149-9338d3f03dc0).html.

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In this thesis I present and discuss the results of optical spectroscopy performed on InGaN/GaN single and multiple quantum well (QW) structures. I report on the optical properties of InGaN/GaN single and multiple QW structures, measured at high excitation power densities. I show a correlation exists between the reduction in PL efficiency at high excitation power densities, the phenomenon so-called ``efficiency-droop'', and a broadening of the PL spectra. I also show a distinct change in recombination dynamics, measured by time-resolved photoluminescence (PL), which occurs at the excitation po

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42

林, 利彦. "高耐圧パワー半導体素子を目指したp型SiC結晶のキャリア寿命に関する研究". 京都大学 (Kyoto University), 2013. http://hdl.handle.net/2433/174947.

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43

Vaillant, Frédéric. "Contribution à l'étude du dopage et de la recombinaison dans le silicium amorphe hydrogéné." Grenoble 1, 1987. http://www.theses.fr/1987GRE10058.

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Effet de l'introduction de diborane et de phosphine dans le melange gazeux depose par decharge electroluminescente a 50 h::(3). Caracterisation par methode optique dans le visible et l'ir, deflexion photothermique, conductivite et photoconductivite stationnaire. Variation avec le dopage de proprietes electriques. Proposition d'un nouveau modele de recombinaison

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44

McBride, Patrick M. "The Effect of Polarization and InGaN Quantum Well Shape in Multiple Quantum Well Light Emitting Diode Heterostructures." DigitalCommons@CalPoly, 2012. https://digitalcommons.calpoly.edu/theses/822.

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Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple qu

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45

Feix, Felix. "Recombination dynamics in (In,Ga)N/GaN heterostructures: Influence of localization and crystal polarity." Doctoral thesis, Humboldt-Universität zu Berlin, 2018. http://dx.doi.org/10.18452/19134.

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(In,Ga)N/GaN-Leuchtdioden wurden vor mehr als 10 Jahren kommerzialisiert, dennoch ist das Verständnis über den Einfluss von Lokalisierung auf die Rekombinationsdynamik in den (In,Ga)N/GaN Quantengräben (QG) unvollständig. In dieser Arbeit nutzen wir die temperaturabhängige stationäre und zeitaufgelöste Spektroskopie der Photolumineszenz (PL), um diesen Einfluss in einer typischen Ga-polaren, planaren (In,Ga)N/GaN-QG-Struktur zu untersuchen. Zusätzlich dehnen wir unsere Studie auf N-polare, axiale (In,Ga)N/GaN Quantumscheiben, nichtpolare Kern/Mantel GaN/(In,Ga)N µ-Drähte und Ga-polare, submono

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46

Walz, Dieter. "Caractérisation de la contamination métallique dans le silicium par des méthodes de durée de vie : application au cas du fer dans le silicium de type P." Grenoble INPG, 1995. http://www.theses.fr/1995INPG0048.

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La caracterisation de la micro contamination metallique dans le silicium par des methodes de duree de vie joue un role de plus en plus important. Dans cette etude nous comparons differentes techniques de mesure de duree de vie (spv, sca-spv, -pcd, elymat et duree de vie de generation dans une structure mos). Nous avons entrepris une analyse critique des modeles utilises pour l'exploitation des mesures et nous avons compare ensuite les sensibilites et les valeurs de duree de vie obtenues par chaque technique en utilisant des echantillons de silicium type p contamines volontairement avec du fer.

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47

Brum, José Antonio. "Etude theorique des proprietes electroniques des heterostructures de semiconducteurs." Paris 7, 1987. http://www.theses.fr/1987PA077006.

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Relations de dispersion des porteurs dans le plan des couches, avec attention particuliere aux sous-bandes de valence issues des extrema gamma ::(8) des materiaux hotes; etude des problemes coulombiens avec resolution du probleme de l'exciton et etude de la raie d'emission associee aux recombinaisons electron-trou piege dans les puits quantiques gaas/algaas. Effets d'un champ electrique longitudinal sur les niveaux d'energie a une et deux particules; interpretations de la stabilite de l'exciton et etude des niveaux d'energie d'impurete et des super reseaux "dents de scie". Etude de la capture

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48

Ni, Xianfeng. "Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes." VCU Scholars Compass, 2010. http://scholarscompass.vcu.edu/etd/2235.

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General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighting almost everywhere. But their lighting efficiency is very limited: only 20-30 lm/W for incandescent lighting bulb, approximately 100 lm/W for fluorescent lighting. State-of-the-art InGaN LEDs with a luminous efficacy of over 200 lm/W at room temperature have been reported. However, the goal of rep

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49

Müllhäuser, Jochen R. "Properties of Zincblende GaN and (In,Ga,Al)N Heterostructures grown by Molecular Beam Epitaxy." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 1999. http://dx.doi.org/10.18452/14382.

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Während über hexagonales (alpha) GaN zum ersten Mal 1932 berichtet wurde, gelang erst 1989 die Synthese einer mit Molekularstrahlepitaxie (MBE) auf 3C-SiC epitaktisch gewachsenen, metastabilen kubischen (eta) GaN Schicht. Die vorliegende Arbeit befaßt sich mit der Herstellung der Verbindungen eta-(In,Ga,Al)N mittels RF-Plasma unterstützter MBE auf GaAs(001) und den mikrostrukturellen sowie optischen Eigenschaften dieses neuartigen Materialsystems. Im Vergleich zur hexagonalen bietet die kubische Kristallstruktur auf Grund ihrer höheren Symmetrie potentielle Vorteile für die Anwendung in optisc

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50

Moroni, Didier. "Etude des proprietes optiques de semi-conducteurs composes iii-v et de puits quantiques par photoluminescence et excitation de la photoluminescence." Paris 6, 1987. http://www.theses.fr/1987PA066540.

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Identification des types de recombinaison entre 2 et 300k dans les couches epaisses de gainas et gainp epitaxiees sur leur support respectif inp et gaas. Etude de l'origine de la luminescence et variation en fonction de l'epaisseur du taux de capture des porteurs de la barriere dans les puits quantiques ingaas/inp. Determination du coefficient d'interdiffusion de al et ga aux interfaces dans les puits quantiques gaas/gaalas

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