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Journal articles on the topic 'Cathodic reactive sputtering'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Vacandio, F., Y. Massiani, P. Gravier, L. Fedrizzi, and D. Brida. "Electrochemical Behaviour of AIN Films Prepared by Reactive Cathodic Sputtering." Materials Science Forum 289-292 (August 1998): 689–98. http://dx.doi.org/10.4028/www.scientific.net/msf.289-292.689.

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2

ASHOK, K. "CHARACTERIZATION OF NICKEL OXIDE THIN FILM — DC REACTIVE MAGNETRON SPUTTERING." Surface Review and Letters 18, no. 01n02 (2011): 11–15. http://dx.doi.org/10.1142/s0218625x11014424.

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Nickel oxide ( NiO ) thin films were deposited on glass substrates by reactive direct current (DC) magnetron sputtering of a Ni target in an Ar / O 2 mixture. The effect of thickness (0.2 μm, 0.4 μm and 1 μm) on the structural and surface morphological properties of NiO thin films was investigated. These films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The films were cubic NiO , with preferred orientation in the (111) direction at lower deposition time (10 mins). At higher deposition time (60 mins) the prefer

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3

Münz, W. D. "Large-Scale Manufacturing of Nanoscale Multilayered Hard Coatings Deposited by Cathodic Arc/Unbalanced Magnetron Sputtering." MRS Bulletin 28, no. 3 (2003): 173–79. http://dx.doi.org/10.1557/mrs2003.58.

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AbstractNanoscale multilayered (superlattice) hard coatings can be manufactured in a plastic hardness range (HP) between 25GPa and 55 GPa by a combination of cathodic arc evaporation and unbalanced magnetron sputtering (arc bond sputter technology). Using large-scale industrial physical vapor deposition (PVD) equipment and a sufficiently high pumping speed, multilayered coatings can be deposited by simultaneously operating cathodes without special shutter and shielding facilities in a common reactive-gas atmosphere. The efficiency of the process is in many cases identical to that of TiN and Cr

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4

Meunier, G., J. P. Manaud, and P. Grall. "Synthesis and characterization of titanium hydride thin films obtained by reactive cathodic sputtering." Materials Science and Engineering: B 18, no. 3 (1993): 303–7. http://dx.doi.org/10.1016/0921-5107(93)90147-f.

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5

Hubička, Zdenek, Martin Zlámal, Jiri Olejníček, Drahoslav Tvarog, Martin Čada, and Josef Krýsa. "Semiconducting p-Type Copper Iron Oxide Thin Films Deposited by Hybrid Reactive-HiPIMS + ECWR and Reactive-HiPIMS Magnetron Plasma System." Coatings 10, no. 3 (2020): 232. http://dx.doi.org/10.3390/coatings10030232.

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A reactive high-power impulse magnetron sputtering (r-HiPIMS) and a reactive high-power impulse magnetron sputtering combined with electron cyclotron wave resonance plasma source (r-HiPIMS + ECWR) were used for the deposition of p-type CuFexOy thin films on glass with SnO2F conductive layer (FTO). The aim of this work was to deposit CuFexOy films with different atomic ratio of Cu and Fe atoms contained in the films by these two reactive sputtering methods and find deposition conditions that lead to growth of films with maximum amount of delafossite phase CuFeO2. Deposited copper iron oxide fil

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6

Arab Pour Yazdi, Lizarraga, Vernoux, Billard, and BRIOIS. "Catalytic Properties of Double Substituted Lanthanum Cobaltite Nanostructured Coatings Prepared by Reactive Magnetron Sputtering." Catalysts 9, no. 4 (2019): 381. http://dx.doi.org/10.3390/catal9040381.

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Lanthanum perovskites are promising candidates to replace platinum group metal (PGM), especially regarding catalytic oxidation reactions. We have prepared thin catalytic coatings of Sr and Ag doped lanthanum perovskite by using the cathodic co-sputtering magnetron method in reactive condition. Such development of catalytic films may optimize the surface/bulk ratio to save raw materials, since a porous coating can combine a large exchange surface with the gas phase with an extremely low loading. The sputtering deposition process was optimized to generate crystallized and thin perovskites films

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7

Combadiere, L., and J. Machet. "Study and control of both target-poisoning mechanisms and reactive phenomenon in reactive planar magnetron cathodic sputtering of TiN." Surface and Coatings Technology 82, no. 1-2 (1996): 145–57. http://dx.doi.org/10.1016/0257-8972(95)02671-1.

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8

Tarnowski, Michał, Justyna Witkowska, Jerzy Morgiel, et al. "Formation of Nitrogen Doped Titanium Dioxide Surface Layer on NiTi Shape Memory Alloy." Materials 14, no. 6 (2021): 1575. http://dx.doi.org/10.3390/ma14061575.

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NiTi shape memory alloys are increasingly being used as bone and cardiac implants. The oxide layer of nanometric thickness spontaneously formed on their surface does not sufficiently protect from nickel transition into surrounding tissues, and its presence, even in a small amount, can be harmful to the human organism. In order to limit this disadvantageous phenomenon, there are several surface engineering techniques used, including oxidation methods. Due to the usually complex shapes of implants, one of the most prospective methods is low-temperature plasma oxidation. This article presents the

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9

Vidal, M. A., and R. Asomoza. "Monte Carlo simulation of the transport process in the growth ofa‐Si:H prepared by cathodic reactive sputtering." Journal of Applied Physics 67, no. 1 (1990): 477–82. http://dx.doi.org/10.1063/1.345228.

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10

Li, Ke-Ding, Po-Wen Chen, and Kao-Shuo Chang. "Low-Temperature Deposition of Transparent Conducting Films Applied to Flexible Electrochromic Devices." Materials 14, no. 17 (2021): 4959. http://dx.doi.org/10.3390/ma14174959.

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Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO3 films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63

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11

Liang, Chih-Hao, and Ying-Jung Chen. "Preparation of High-Performance Metal-Free UV/Near Infrared-Shielding Films for Human Skin Protection." Nanomaterials 11, no. 8 (2021): 1954. http://dx.doi.org/10.3390/nano11081954.

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A series of metal-free UV/near infrared (NIR)-shielding coatings are successfully fabricated by shielded cathodic arc plasma evaporation (CAPE) and substrate-biased RF magnetron sputtering processes. The UV/NIR-shielding coatings comprising quarter-wave stacks of TiO2/SiO2 multilayers and high-conductivity sputter-deposited ITO films with a thickness in the range of 200–600 nm could block IRA and IRB radiations, respectively. The total thicknesses of UV/near infrared-shielding films are in the range from 375 nm to 1513.8 nm. The anatase-phase TiO2 films with absorption edge located at ∼375 nm

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12

Wautelet, M., J. P. Dauchot, F. Debal, S. Edart, and M. Hecq. "Influence of the composition of gas mixture on the stoichiometry of sputter-deposited compound films: The case of zirconium nitrides." Journal of Materials Research 11, no. 4 (1996): 825–29. http://dx.doi.org/10.1557/jmr.1996.0100.

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By means of dc-reactive sputtering, it is possible to vary the stoichiometry of deposited zirconium nitrides, by varying the molar fraction of N2 in an Ar–N2 gas mixture. In order to understand the origin of this effect, a theoretical model of reactive sputtering is devised. It is based on the study of reaction kinetics taking place at the surfaces of the cathode and the chamber walls. In fitting the model with experimental data, it turns out that one has to introduce the roles of Ar, N2, and N species. For reactive sputtering of ZrNz films, a good fit is obtained when it is assumed that the m

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13

Witit-Anun, N., P. Rakkwamsuk, and Pichet Limsuwan. "Characterization of Anatase and Rutile TiO₂Thin Films Deposited by Two Cathodes Sputtering System." Advanced Materials Research 55-57 (August 2008): 469–72. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.469.

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Titanium dioxide, TiO2, thin films were deposited on unheated Si (100) wafers by two cathodes sputtering system. However, during the deposition of TiO2 films only one cathode was used. A pure metallic titanium was used as a sputtering target. Argon and oxygen were used as sputtered gas and reactive gas, respectively. TiO2 films were deposited at the argon and oxygen ratio of 1:4 and a total pressure of 5.0 x 10-3 mbar. The distance between the target and the center point of substrate was 12 cm. For each deposition of TiO2 films, the position of substrate was changed every 2 cm on the radial po

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14

Rademacher, Daniel, Tobias Zickenrott, and Michael Vergöhl. "Sputtering of dielectric single layers by metallic mode reactive sputtering and conventional reactive sputtering from cylindrical cathodes in a sputter-up configuration." Thin Solid Films 532 (April 2013): 98–105. http://dx.doi.org/10.1016/j.tsf.2012.11.101.

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15

Fox, G. R., N. Setter, and H. G. Limberger. "Fabrication and structural analysis of ZnO coated fiber optic phase modulators." Journal of Materials Research 11, no. 8 (1996): 2051–61. http://dx.doi.org/10.1557/jmr.1996.0258.

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Fiber optic modulators were fabricated by coating optical fibers with electrode and piezoelectric ZnO layers. The techniques of piezoelectric fiber optic modulator (PFOM) fabrication are presented, and the microstructure and crystallographic texture of the coatings are analyzed. In order to produce thick (approximately 5 μm) ZnO coatings, it was necessary to study the reactive dc magnetron sputtering process in O2/Ar gas mixtures under conditions close to the transition between an oxidized and nonoxidized Zn target surface. In situ quartz crystal microbalance measurements of the deposition rat

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16

Sproul, William D., Paul J. Rudnik, Michael E. Graham, and Suzanne L. Rohde. "High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system." Surface and Coatings Technology 43-44 (December 1990): 270–78. http://dx.doi.org/10.1016/0257-8972(90)90080-v.

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17

Гаврилов, Н. В., А. С. Каменецких, Д. Р. Емлин, П. В. Третников та А. В. Чукин. "Разрядная система с самонакаливаемым полым катодом и испаряемым анодом в остроугольном магнитном поле для нанесения оксидных покрытий". Журнал технической физики 89, № 6 (2019): 861. http://dx.doi.org/10.21883/jtf.2019.06.47632.214-18.

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AbstractThe properties of a discharge with a self-heated hollow cathode and an evaporating anode placed in a cusp magnetic field created by two oppositely connected coils installed near the anode and cathode are studied. There is a negatively biased sample holder in the region of the annular magnetic slit. Compressing the discharge column at the anode with a magnetic field ensures effective evaporation of the metal (aluminum) loaded into the crucible anode; the density of the oxygen-containing plasma generated in the volume was controlled by changing the current of the cathode magnetic coil. T

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18

Bobylev, Andrey Nikolayevich, Sergey Yurievich Udovichenko, Alexander Nikolayevich Busygin, and Abdullah Haidar Ebrahim. "The Effect of Aluminum Dopant Amount in Titania Film on the Memristor Electrical Properties." Nano Hybrids and Composites 28 (February 2020): 59–64. http://dx.doi.org/10.4028/www.scientific.net/nhc.28.59.

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In a promising nanoelectronics device, namely, memristor based on metal oxides, there are many intermediate states with different conductivity between the limits of highly conductive and low-conducting states. These intermediate states can be used in the processes of associative learning of a neural network based on memristor synapses and simultaneous processing of input pulses, which consists in their weighing and summation in the neuroprocessor. By the method of simultaneous magnetron sputtering of two cathodes in a reactive oxygen environment, thin films of mixed oxides with a different mol

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19

Chen, Jing Yan, Xiao Guang He, Hai Yan Qi, Hao Chen Shi, and Feng Gao. "Fe-C-N Catalysts Prepared by Magnetron Sputtering for Oxygen Reduction Reaction in a Neutral Solution." Applied Mechanics and Materials 672-674 (October 2014): 609–12. http://dx.doi.org/10.4028/www.scientific.net/amm.672-674.609.

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Non-precious metal Fe-C-N thin films were prepared by magnetron sputtering at different sputtering currents applied on a Fe target. The films were subsequently heated at 700 °C in N2atmosphere. Fe-C-N thin films were investigated as an alternative cathode catalyst for the oxygen reduction reaction (ORR) in a neutral solution. The results indicated that the catalytic activity of Fe-C-N thin films for the ORR increased with the increase of the sputtering current. When the sputtering current was 0.2 A, limiting current density was 5.50 mA cm-2and onset potential was-0.10 V vs. Ag/AgCl, which were

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20

Solovyev, Andrey A., Anastasya N. Kovalchuk, Igor V. Ionov, S. V. Rabotkin, Anna V. Shipilova, and Dmitry N. Terentev. "Deposition of a Thin-Film CGO Electrolyte for Solid Oxide Fuel Cells." Key Engineering Materials 685 (February 2016): 776–80. http://dx.doi.org/10.4028/www.scientific.net/kem.685.776.

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Reducing the operating temperature of solid oxide fuel cells (SOFCs) from 800-1000°C is one of the main SOFC research goals. It can be achieved by lowering the thickness of an electrolyte (ZrO2:Y2O3 (YSZ) is widely used as electrolyte material). On the other hand the problem can be solved by using of another electrolyte material with high ionic conductivity at intermediate temperatures. Therefore the present study deals with magnetron sputtering of ceria gadolinium oxide (CGO), which has a higher conductivity compared to YSZ. The microstructure of CGO layers deposited on porous NiO/YSZ substra

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21

Shalaeva, E. V., R. S. Baryshev, M. V. Kuznetsov та B. V. Mitrofanov. "Structure of epitaxial δ-NbN films deposited by cathode reactive sputtering". Thin Solid Films 261, № 1-2 (1995): 64–69. http://dx.doi.org/10.1016/s0040-6090(94)06508-x.

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22

Hong, Ruijiang, and Shuhua Xu. "ZnO:Al Films Prepared by Reactive Mid-frequency Magnetron Sputtering with Rotating Cathode." Journal of Materials Science & Technology 26, no. 10 (2010): 872–77. http://dx.doi.org/10.1016/s1005-0302(10)60139-9.

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23

Delahoy, A. E., and S. Y. Guo. "Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 4 (2005): 1215–20. http://dx.doi.org/10.1116/1.1894423.

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24

Delahoy, Alan E., Shou Peng, Payal Patra, et al. "Cadmium Tin Oxide and Zinc Magnesium Oxide Prepared by Hollow Cathode Sputtering for CdTe Photovoltaics." MRS Advances 2, no. 53 (2017): 3203–14. http://dx.doi.org/10.1557/adv.2017.407.

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ABSTRACTThis work reports the fabrication and characterization of superstrate-type Zn1-xMgxO/CdTe heterojunction solar cells on both CdxSnyO and commercial SnO2:F transparent conducting oxides (TCOs) in which the ZMO and CTO layers are produced for the first time by hollow cathode sputtering. The sputtering is conducted in a reactive mode using metal or alloyed metal targets fitted to a custom-made linear cathode. It is notable that the CdS buffer layer conventionally employed in CdTe solar cells is entirely replaced by the ZMO window layer. The use of ZMO is found to eliminate the blue loss a

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25

Angelopoulou, Pinelopi, Spyros Kassavetis, Joan Papavasiliou, et al. "Enhanced Performance of LiAl0.1Mn1.9O4 Cathode for Li-Ion Battery via TiN Coating." Energies 14, no. 4 (2021): 825. http://dx.doi.org/10.3390/en14040825.

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The present work addresses the issues related to the capacity fading of spinel LiMn2O4, such as Mn leaching and Jahn–Teller distortion and suggests an advanced TiN-coated LiAl0.1Mn1.9O4 (LAMO) cathode material as an electrode for lithium-ion batteries. TiN coating layers with the same thickness but a different porosity cover the LiAl0.1Mn1.9O4 electrode via reactive magnetron sputtering, and present promising electrochemical behavior. In contrast with the pristine LiAl0.1Mn1.9O4, the dense TiN-coated LiAl0.1Mn1.9O4 electrode demonstrates a remarkable long-term cycling by reducing the contact a

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26

Felmetsger, V., and P. Laptev. "Dual cathode DC–RF and MF–RF coupled S-Guns for reactive sputtering." Vacuum 74, no. 3-4 (2004): 403–8. http://dx.doi.org/10.1016/j.vacuum.2004.01.007.

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27

Chodun, Rafał, Katarzyna Nowakowska-Langier, Bartosz Wicher, Sebastian Okrasa, Roman Minikayev, and Krzysztof Zdunek. "Reactive sputtering of titanium compounds using the magnetron system with a grounded cathode." Thin Solid Films 640 (October 2017): 73–80. http://dx.doi.org/10.1016/j.tsf.2017.08.050.

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28

Pradhan, Anshu A., S. Ismat Shah, and Karl M. Unruh. "Reactive sputter deposition of alumina thin films using a hollow cathode sputtering source." Review of Scientific Instruments 73, no. 11 (2002): 3841–45. http://dx.doi.org/10.1063/1.1512340.

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29

Kazemeini, Mehdi H., and Alexander A. Berezin. "Reactive deposition of compounds by a cavity-hollow cathode direct current sputtering system." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18, no. 6 (2000): 2908–13. http://dx.doi.org/10.1116/1.1312373.

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30

Dawson‐Elli, David F., Anthony R. Lefkow, and James E. Nordman. "A comparison of SiO2 planarization layers by hollow cathode enhanced direct current reactive magnetron sputtering and radio frequency magnetron sputtering." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 3 (1990): 1294–98. http://dx.doi.org/10.1116/1.576914.

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31

KOJIMA, Hiroyasu, Nagahiro SAITO, and Osamu TAKAI. "High-Rate Reactive Deposition of SiO2 Films Using a New DC Rotary Sputtering Cathode." Journal of The Surface Finishing Society of Japan 63, no. 3 (2012): 179. http://dx.doi.org/10.4139/sfj.63.179.

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32

Kazemeini, Mehdi H., Alexander A. Berezin, and Nobuhiko Fukuhara. "Formation of thin TiNxOy films by using a hollow cathode reactive DC sputtering system." Thin Solid Films 372, no. 1-2 (2000): 70–77. http://dx.doi.org/10.1016/s0040-6090(00)01048-8.

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33

Belkind, A., W. Gerristead, Z. Orban, D. Dow, J. Felts, and R. Laird. "Reactive co-sputtering of oxides and nitrides using a C-Magtm rotatable cylindrical cathode." Surface and Coatings Technology 49, no. 1-3 (1991): 155–60. http://dx.doi.org/10.1016/0257-8972(91)90048-2.

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34

Sánchez, O., A. Climent, M. Fernández Barcia, O. Martínez Sacristán, and M. Hernández-Vélez. "ZnO1-xTexthin films deposited by reactive magnetron co-sputtering: composition, structure and optical properties." MRS Advances 2, no. 53 (2017): 3111–16. http://dx.doi.org/10.1557/adv.2017.361.

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ABSTRACTZnO1-xTexthin films were deposited by DC reactive magnetron co-sputtering using pure Zn and Te targets. Te atomic concentration in the films ranged from x=0 to 0.33 by adjusting the applied power on the targets or varying the cathode-substrate distance. Chemical composition and crystalline structure were determined by RBS experiments and X-ray Diffraction, respectively. For low Te atomic concentrations (x≤0.04) the deposited ZnO1-xTexfilms showed a crystalline structure ZnO wurtzite type however, for increasing Te concentration significant broadening and decreasing intensities of the m

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35

Ohno, Shingo, Daisuke Sato, Masato Kon, et al. "Photocatalytic Properties of TiO2Films Deposited by Reactive Sputtering in Mid-Frequency Mode with Dual Cathodes." Japanese Journal of Applied Physics 43, no. 12 (2004): 8234–41. http://dx.doi.org/10.1143/jjap.43.8234.

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36

Rohde, S. L., I. Petrov, W. D. Sproul, S. A. Barnett, P. J. Rudnik, and M. E. Graham. "Effects of an unbalanced magnetron in a unique dual-cathode, high rate reactive sputtering system." Thin Solid Films 193-194 (January 1990): 117–26. http://dx.doi.org/10.1016/s0040-6090(05)80019-7.

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37

Szczyrbowski, J., G. Bräuer, W. Dicken, et al. "Reactive sputtering of dielectric layers on large scale substrates using an AC twin magnetron cathode." Surface and Coatings Technology 93, no. 1 (1997): 14–20. http://dx.doi.org/10.1016/s0257-8972(97)00033-9.

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38

Matsuda, Y., Y. Yamori, S. Ohgushi, M. Muta, and H. Fujiyama. "Plasma cathode—surface interaction in reactive magnetron sputtering for indium—tin-oxide thin film deposition." Surface and Coatings Technology 98, no. 1-3 (1998): 1286–92. http://dx.doi.org/10.1016/s0257-8972(97)00246-6.

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39

Kikuchi, Akifumi, Akimitsu Ishihara, Koichi Matsuzawa, Shigenori Mitsushima, and Ken-ichiro Ota. "Tantalum-based Compounds Prepared by Reactive Sputtering as a New Non-platinum Cathode for PEFC." Chemistry Letters 38, no. 12 (2009): 1184–85. http://dx.doi.org/10.1246/cl.2009.1184.

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40

Kon, Masato, Pung Keun Song, Yuzo Shigesato, Peter Frach, Akio Mizukami, and Koichi Suzuki. "Al-Doped ZnO Films Deposited by Reactive Magnetron Sputtering in Mid-Frequency Mode with Dual Cathodes." Japanese Journal of Applied Physics 41, Part 1, No. 2A (2002): 814–19. http://dx.doi.org/10.1143/jjap.41.814.

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41

Ishihara, Akimitsu, Shotaro Doi, Shigenori Mitsushima, and Ken-ichiro Ota. "Tantalum (oxy)nitrides prepared using reactive sputtering for new nonplatinum cathodes of polymer electrolyte fuel cell." Electrochimica Acta 53, no. 16 (2008): 5442–50. http://dx.doi.org/10.1016/j.electacta.2008.02.092.

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42

Delahoy, A. E., S. Y. Guo, C. Paduraru, and A. Belkind. "Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al2O3, doped ZnO, and In2O3:Mo." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22, no. 4 (2004): 1697–704. http://dx.doi.org/10.1116/1.1723289.

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43

Tsizh, B., and Z. Dziamski. "Chemical deposition and mechanical application of semiconductors thin films." Scientific Messenger of LNU of Veterinary Medicine and Biotechnologies 23, no. 95 (2021): 3–6. http://dx.doi.org/10.32718/nvlvet-f9501.

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Features and main technological methods of forming thin layers of semiconductor materials by methods of chemical deposition and mechanical application are analyzed. The disadvantages of thermal sputtering and cathodic sputtering of thin films in vacuum for multicomponent semiconductor compounds are indicated. Features of chemical deposition of semiconductor films from the gas (steam) phase are presented. Such deposition involves the transfer of source material from the evaporator zone with higher temperature in the form of volatile compounds to the colder surface of the substrate, where the fi

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44

GARCÍA LÓPEZ, J., J. SIEJKA, Y. LEMAITRE, J. C. MAGE, and B. MARCILHAC. "USE OF ION BEAM ANALYSIS TO STUDY IN SITU THE OXYGEN DIFFUSION AND INTERFACIAL TRANSFER COEFFICIENTS IN Y1Ba2Cu3O7-x THIN FILMS." Modern Physics Letters B 15, no. 28n29 (2001): 1361–69. http://dx.doi.org/10.1142/s0217984901003287.

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An experimental chamber was connected to the 2.5 MV Van de Graaff accelerator allowing in situ sample annealing at T ≤ 700° C and under pO 2 ranging from 10-8 to 1 bar. For the first time to our knowledge the 16 O (3 He ,α)15 O nuclear reaction has been employed to monitor in situ the oxygen loss and uptake in Y 1 Ba 2 Cu 3 O 7-x (YBCO) thin films as a function of oxygen pressure and temperature ( T ≤ 500° C ). The role played by the presence of carbon contamination on YBCO surface was elucidated. Using the 12 C(d,p) 13 C nuclear reaction the carbon loss was observed for T ≥ 250° C and it was

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45

Chodun, Rafał, Bartosz Wicher, Łukasz Skowrński, et al. "Multi-sided metallization of textile fibres by using magnetron system with grounded cathode." Materials Science-Poland 35, no. 3 (2017): 639–46. http://dx.doi.org/10.1515/msp-2017-0078.

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AbstractThe synthesis of coatings on textiles fibers enables functionalization of their properties e.g.: changing the reaction on IR radiation. In our experiment, a magnetron with a grounded cathode and positively biased anode was used as a source of plasma. A ring anode was positioned at 8 cm distance from the cathode. Samples of glass and cotton textile were placed at the plane of the anode. Ti and TiN coatings were deposited by sputtering of titanium target in Ar or Ar+ N2 atmosphere. SEM studies showed that, using the magnetron system described above, the textile fibers were covered by the

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Kiryukhantsev-Korneev, Ph V., A. D. Sytchenko, S. A. Vorotilo, V. V. Klechkovskaya, V. Yu Lopatin, and E. A. Levashov. "Structure, Oxidation Resistance, Mechanical, and Tribological Properties of N- and C-Doped Ta-Zr-Si-B Hard Protective Coatings Obtained by Reactive D.C. Magnetron Sputtering of TaZrSiB Ceramic Cathode." Coatings 10, no. 10 (2020): 946. http://dx.doi.org/10.3390/coatings10100946.

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Coatings in the Ta-Zr-Si-B-C-N system were produced by magnetron sputtering of a TaSi2-Ta3B4-(Ta,Zr)B2 ceramic target in the Ar medium and Ar-N2 and Ar-C2H4 gas mixtures. The structure and composition of coatings were studied using scanning electron microscopy, glow discharge optical emission spectroscopy, energy-dispersion spectroscopy, and X-ray diffraction. Mechanical and tribological properties of coatings were determined using nanoindentation and pin-on-disk tests using 100Cr6 and Al2O3 balls. The oxidation resistance of coatings was evaluated by microscopy and X-ray diffraction after ann

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Mani-Lata, Chitlada, Chadapat Hussakan, and Gasidit Panomsuwan. "Fast and Facile Synthesis of Pt Nanoparticles Supported on Ketjen Black by Solution Plasma Sputtering as Bifunctional HER/ORR Catalysts." Journal of Composites Science 4, no. 3 (2020): 121. http://dx.doi.org/10.3390/jcs4030121.

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Hydrogen evolution reaction (HER) and oxygen reduction reaction (ORR) are two core electrochemical processes involved in hydrogen fuel cell (HFC) technology. ORR is a cathodic reaction occurring in HFC, whereas HER can convert the H2O byproduct from HFCs into H2 gas via water splitting. Platinum (Pt)-based catalysts are the most effective catalysts for both reactions. In this work, we used a fast, facile, and chemical-free method, called solution plasma sputtering (SPS), to synthesize Pt nanoparticles supported on Ketjen Black (KB). The discharge time was varied (5, 10, and 20 min) to alter th

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Gheriani, R., and Raouf Mechiakh. "Effect of Manganese on Titanium Thin Films Adhesion Deposited on Steel Substrates." Defect and Diffusion Forum 326-328 (April 2012): 583–86. http://dx.doi.org/10.4028/www.scientific.net/ddf.326-328.583.

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The mainly property of thin solid films technologies is their adhesion to the substrates. Because of its good wear resistance and its low coefficient of friction against steel, TiC is an attractive coating material for wear applications such as bearing components. The adhesion of TiC coatings, however suffers from insufficient reproducibility, which is probably due to uncontrolled process parameters. In our work pure titanium thin films of approximately 0.6 µm in thickness were prepared on 100C6 stainless steel substrates by cathodic sputtering. The samples were subjected to secondary vacuum a

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Park, Byung Nam, and Sie Young Choi. "Copper Metalization Using Electroplating Process." International Journal of Modern Physics B 17, no. 08n09 (2003): 1261–66. http://dx.doi.org/10.1142/s0217979203018843.

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Recently, electroplating method which deposits copper films by using cupric sulfate solution, has been proposed. The electroplating method has the advantages of simplicity, safety, low cost, low deposition temperature, high purity, low resistivity, and high capability of gap filling. In this method, an electrical contact is made to the seed layer and a current is passed such that the reaction ⌊ Cu 2++ 2e → Cu (0)⌋ occurs at the wafer surface (cathode). At the anode, an oxidation reaction occurs which balances the current flow at the cathode, thus maintaining electrical neutrality in the cupric

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Cristopher, M. M., K. M. Dhanisha, M. Abinaya, P. Deepak Raj, K. Jeyadheepan, and M. Sridharan. "Resistive Switching Behavior of Au/TiO2/NiCr Structure." International Journal of Nanoscience 17, no. 03 (2018): 1760035. http://dx.doi.org/10.1142/s0219581x17600353.

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Thin film memristor behavior depends on the choice of top and bottom electrode material and metal oxide layer. In the present work, the influence of the top and bottom electrode layers on the electric field-induced resistance switching phenomena of TiO2-based MIM was studied. Au/TiO2/NiCr and NiCr/TiO2/Au structures were fabricated by depositing TiO2 active layer by reactive dc magnetron sputtering technique between thermally evaporated NiCr and Au electrodes. TiO2 layer was sputtered with a cathode power of 150[Formula: see text]W keeping the other deposition parameters constant. TiO2 films w

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