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Journal articles on the topic 'CBRAM'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 May 2024

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1

Cao, Haichao, and Hao Ren. "A 10-nm-thick silicon oxide based high switching speed conductive bridging random access memory with ultra-low operation voltage and ultra-low LRS resistance." Applied Physics Letters 120, no. 13 (March 28, 2022): 133502. http://dx.doi.org/10.1063/5.0085045.

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In this paper, a silicon oxide based conductive bridging random access memory (CBRAM) with an ultra-low operation voltage, a high switching speed, and an ultra-low resistance at low resistance state (LRS) is reported. The CBRAM has a sandwich structure with platinum and copper as electrode layers and an ultra-thin 10-nm-thick silicon oxide film as an insulating switching layer. The CBRAMs are fabricated with CMOS compatible materials and processes. DC I–V sweep characterizations show an ultra-low SET/RESET voltage of 0.35 V/−0.05 V, and the RESET voltage is the lowest among all ultra-low voltage CBRAMs. The CBRAM is capable of withstanding endurance tests with over 106 pulses of +0.4 V/−0.1 V with 1 μs pulse width, with the resistance at LRS maintaining at an ultra-low value of only 20 Ω, which is the lowest among all CBRAMs to date, and it is reduced by at least 2.95 times compared with prior studies. Meanwhile, the switching ratio between high resistance state and LRS is more than 1.49 × 104. Moreover, the switching time characterization of the CBRAM demonstrates an ultra-short SET/RESET time of 7/9 ns. The CBRAM has potential applications in high-speed, ultra-low voltage, and ultra-low power electronics.

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2

Abbas, Haider, Jiayi Li, and Diing Shenp Ang. "Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications." Micromachines 13, no. 5 (April 30, 2022): 725. http://dx.doi.org/10.3390/mi13050725.

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Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based storage devices and computing systems are approaching their scaling and technical limits, extensive research on emerging technologies is becoming more and more important. Among other emerging technologies, CBRAM offers excellent opportunities for future memory and neuromorphic computing applications. The principles of the CBRAM are explored in depth in this review, including the materials and issues associated with various materials, as well as the basic switching mechanisms. Furthermore, the opportunities that CBRAMs provide for memory and brain-inspired neuromorphic computing applications, as well as the challenges that CBRAMs confront in those applications, are thoroughly discussed. The emulation of biological synapses and neurons using CBRAM devices fabricated with various switching materials and device engineering and material innovation approaches are examined in depth.

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3

Cha, Jun-Hwe, Sang Yoon Yang, Jungyeop Oh, Shinhyun Choi, Sangsu Park, Byung Chul Jang, Wonbae Ahn, and Sung-Yool Choi. "Conductive-bridging random-access memories for emerging neuromorphic computing." Nanoscale 12, no. 27 (2020): 14339–68. http://dx.doi.org/10.1039/d0nr01671c.

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4

Kim, Hae Jin. "Recent Progress of the Cation Based Conductive Bridge Random Access Memory." Ceramist 26, no. 1 (March 31, 2023): 90–105. http://dx.doi.org/10.31613/ceramist.2023.26.1.07.

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Demand for new computing systems equipped with ultra-high-density memory storage and new computer architecture is rapidly increasing with the tremendous increment of the amount of data produced and/or reproduced. In particular, the requirement for technology development is growing as conventional storage devices face the physical limitations for scaling down and the data bottleneck that the Von Neumann architecture increases. Among the recent emerging memory devices, the conductive bridge random access memory (CBRAM) has superior switching properties and excellent scalability to be adopted as the next-generation storage device and as the hardware implementation of the neuromorphic computing system. In this review, the previous papers on the resistive switching mechanism of CBRAM and the precedent CBRAM devices exploiting various materials proposed by many research groups are introduced. The principle of CBRAM is discussed including the operation mechanism, switching materials, and the challenges that need to be solved. A wide selection of materials including metal oxides, Chalcogenides, and other non-oxides have been examined as the electrolyte layer of the CBRAM. Various switching materials, device engineering, and material innovation approaches were introduced, and the research results for solving the problems of CBRAM were reviewed in depth.

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5

Hsu, Chih-Chieh, Po-Tsun Liu, Kai-Jhih Gan, Dun-Bao Ruan, and Simon M. Sze. "Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film." Nanomaterials 11, no. 9 (August 27, 2021): 2204. http://dx.doi.org/10.3390/nano11092204.

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In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 104 cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 104 s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.

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6

Goux, Ludovic, Janaki Radhakrishnan, Attilio Belmonte, Thomas Witters, Wouter Devulder, Augusto Redolfi, Shreya Kundu, Michel Houssa, and Gouri Sankar Kar. "Key material parameters driving CBRAM device performances." Faraday Discussions 213 (2019): 67–85. http://dx.doi.org/10.1039/c8fd00115d.

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This study is focused on Conductive Bridging Random Access Memory (CBRAM) devices based on chalcogenide electrolyte and Cu-supply materials, and aims at identifying the key material parameters controlling memory properties.

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7

Aziz, Jamal, Honggyun Kim, and Deok-Kee Kim. "(Digital Presentation) Power Efficient Transistors with Low Subthreshold Swing Using Abrupt Switching Devices." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1283. http://dx.doi.org/10.1149/ma2022-02351283mtgabs.

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With the rapid development of transparent integrated circuits, transistors with extremely low subthreshold swing (SS) is becoming a necessary requirement. Here, we fabricated three transparent device structures that show abrupt electrical switching and make their series connection to the source terminal of the conventional field effect transistors (FET) to lower the SS value. Firstly, we demonstrate an environment friendly, disposable, and transparent conductive bridge random access memory (CBRAM) device composed of a cellulose nanocrystals active layer. Our CBRAM consists of a silver (Ag) electrochemically active top electrode and a cellulose nanocrystals-based switching layer on the FTO coated glass substrate. Devices with CBRAM can enable FET with an ultra-steep slope that is SS < 0.24 mV/dec and has a significantly high on/off ratio (~105) by switching the Ag metallic filament between on and off. Niobium oxide (NbO2) based threshold switching devices and zinc oxide (ZnO) based flexible Schottky diodes that show electrical breakdown were also stacked with FET, which gave SS values < 0.74 mV/dec and < 5.20 mV/dec, respectively. Comparatively, a nano-watt transistor called filament transistor (FET + CBRAM stack) can significantly improve the SS slope value with the lowest leakage current (~nA) and a record low turn on-voltage (~0.2 V) with a set power of only ~197 nW compared to the other series stack, which thereby attracts the attention of low power operations. Keywords: filament transistor, threshold switching, Schottky diode, subthreshold swing, on/off ratio Figure 1

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8

Merkel, Cory, Dhireesha Kudithipudi, Manan Suri, and Bryant Wysocki. "Stochastic CBRAM-Based Neuromorphic Time Series Prediction System." ACM Journal on Emerging Technologies in Computing Systems 13, no. 3 (May 13, 2017): 1–14. http://dx.doi.org/10.1145/2996193.

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9

Suri, Manan, Damien Querlioz, Olivier Bichler, Giorgio Palma, Elisa Vianello, Dominique Vuillaume, Christian Gamrat, and Barbara DeSalvo. "Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses." IEEE Transactions on Electron Devices 60, no. 7 (July 2013): 2402–9. http://dx.doi.org/10.1109/ted.2013.2263000.

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10

Rehman, Shania, Muhammad Farooq Khan, Sikandar Aftab, Honggyun Kim, Jonghwa Eom, and Deok-kee Kim. "Thickness-dependent resistive switching in black phosphorus CBRAM." Journal of Materials Chemistry C 7, no. 3 (2019): 725–32. http://dx.doi.org/10.1039/c8tc04538k.

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11

Qin, Shengjun, Zhan Liu, Guo Zhang, Jinyu Zhang, Yaping Sun, Huaqiang Wu, He Qian, and Zhiping Yu. "Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory." Physical Chemistry Chemical Physics 17, no. 14 (2015): 8627–32. http://dx.doi.org/10.1039/c4cp04903a.

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12

Souchier, E., F. D'Acapito, P. Noé, P. Blaise, M. Bernard, and V. Jousseaume. "The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories." Physical Chemistry Chemical Physics 17, no. 37 (2015): 23931–37. http://dx.doi.org/10.1039/c5cp03601a.

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13

Choi, Yeon-Joon, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Seongjae Cho, and Byung-Gook Park. "Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach." Physical Chemistry Chemical Physics 23, no. 48 (2021): 27234–43. http://dx.doi.org/10.1039/d1cp04637c.

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A new physical analysis of the filament formation in a Ag conducting-bridge random-access memory (CBRAM) device in consideration of the existence of inter-atomic attractions caused by metal bonding is suggested.

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14

Jameson, J. R., P. Blanchard, J. Dinh, N. Gonzales, V. Gopalakrishnan, B. Guichet, S. Hollmer, et al. "(Invited) Conductive Bridging RAM (CBRAM): Then, Now, and Tomorrow." ECS Transactions 75, no. 5 (September 23, 2016): 41–54. http://dx.doi.org/10.1149/07505.0041ecst.

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15

Muto, Satoshi, Ryota Yonesaka, Atsushi Tsurumaki-Fukuchi, Masashi Arita, and Yasuo Takahashi. "Observation of Conductive Filament in CBRAM at Switching Moment." ECS Transactions 80, no. 10 (October 25, 2017): 895–902. http://dx.doi.org/10.1149/08010.0895ecst.

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16

Shimeng Yu and H. S. Philip Wong. "Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)." IEEE Transactions on Electron Devices 58, no. 5 (May 2011): 1352–60. http://dx.doi.org/10.1109/ted.2011.2116120.

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17

Mahalanabis, Debayan, Rui Liu, Hugh J. Barnaby, Shimeng Yu, Michael N. Kozicki, Adnan Mahmud, and Erica Deionno. "Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays." IEEE Transactions on Nuclear Science 62, no. 6 (December 2015): 2606–12. http://dx.doi.org/10.1109/tns.2015.2478382.

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18

Gonzalez-Velo, Yago, Adnan Mahmud, Wenhao Chen, Jennifer Lynn Taggart, Hugh J. Barnaby, Michael N. Kozicki, Mahesh Ailavajhala, Keith E. Holbert, and Maria Mitkova. "Radiation Hardening by Process of CBRAM Resistance Switching Cells." IEEE Transactions on Nuclear Science 63, no. 4 (August 2016): 2145–51. http://dx.doi.org/10.1109/tns.2016.2569076.

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19

Latif, M. R., P. H. Davis, W. B. Knowton, and M. Mitkova. "CBRAM devices based on a nanotube chalcogenide glass structure." Journal of Materials Science: Materials in Electronics 30, no. 3 (December 15, 2018): 2389–402. http://dx.doi.org/10.1007/s10854-018-0512-0.

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20

Kwon, Ki-Hyun, Dong-Won Kim, Hea-Jee Kim, Soo-Min Jin, Dae-Seong Woo, Sang-Hong Park, and Jea-Gun Park. "An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)." Journal of Materials Chemistry C 8, no. 24 (2020): 8125–34. http://dx.doi.org/10.1039/d0tc01325k.

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In a Cu_xO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-free and electro-reset processes could be achieved at a specific ex situ annealing temperature of the solid electrolyte.

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21

Simanjuntak, Firman Mangasa, Julianna Panidi, Fayzah Talbi, Adam Kerrigan, Vlado K. Lazarov, and Themistoklis Prodromakis. "Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices." APL Materials 10, no. 3 (March 1, 2022): 031103. http://dx.doi.org/10.1063/5.0076903.

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The insertion of a metal layer between an active electrode and a switching layer leads to the formation of a ternary oxide at the interface. The properties of this self-formed oxide are found to be dependent on the Gibbs free energy of oxide formation of the metal ([Formula: see text]). We investigated the role of various ternary oxides in the switching behavior of conductive bridge random access memory (CBRAM) devices. The ternary oxide acts as a barrier layer that can limit the mobility of metal cations in the cell, promoting stable switching. However, too low (higher negative value) [Formula: see text] leads to severe trade-offs; the devices require high operation current and voltages to exhibit switching behavior and low memory window (on/off) ratio. We propose that choosing a metal layer having appropriate [Formula: see text] is crucial in achieving reliable CBRAM devices.

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22

Kwon, Kyoung-Cheol, Myung-Jin Song, Ki-Hyun Kwon, Han-Vit Jeoung, Dong-Won Kim, Gon-Sub Lee, Jin-Pyo Hong, and Jea-Gun Park. "Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor." Journal of Materials Chemistry C 3, no. 37 (2015): 9540–50. http://dx.doi.org/10.1039/c5tc01342a.

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Nanoscale non-volatile CBRAM-cells are developed by using a CuO solid-electrolyte, providing a ∼10²memory margin, ∼3 × 10⁶endurance cycles, ∼6.63-years retention time at 85 °C, ∼100 ns writing speed, and MLC operation.

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23

Cho, Hyojong, and Sungjun Kim. "Emulation of Biological Synapse Characteristics from Cu/AlN/TiN Conductive Bridge Random Access Memory." Nanomaterials 10, no. 9 (August 29, 2020): 1709. http://dx.doi.org/10.3390/nano10091709.

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Here, we present the synaptic characteristics of AlN-based conductive bridge random access memory (CBRAM) as a synaptic device for neuromorphic systems. Both non-volatile and volatile memory are observed by simply controlling the strength of the Cu filament inside the AlN film. For non-volatile switching induced by high compliance current (CC), good retention with a strong Cu metallic filament is verified. Low-resistance state (LRS) and high-resistance state (HRS) conduction follow metallic Ohmic and trap-assisted tunneling (TAT), respectively, which are supported by I–V fitting and temperature dependence. The transition from long-term plasticity (LTP) to short-term plasticity (STP) is demonstrated by increasing the pulse interval time for synaptic device application. Also, paired-pulse facilitation (PPF) in the nervous system is mimicked by sending two identical pulses to the CBRAM device to induce STP. Finally, potentiation and depression are achieved by gradually increasing the set and reset voltage in pulse transient mode.

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24

Lee, Daeseok, Sami Oukassi, Gabriel Molas, Catherine Carabasse, Raphael Salot, and Luca Perniola. "Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM." IEEE Journal of the Electron Devices Society 5, no. 4 (July 2017): 283–87. http://dx.doi.org/10.1109/jeds.2017.2693220.

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25

Gan, Kai-Jhih, Po-Tsun Liu, Dun-Bao Ruan, Yu-Chuan Chiu, and Simon M. Sze. "Annealing effects on resistive switching of IGZO-based CBRAM devices." Vacuum 180 (October 2020): 109630. http://dx.doi.org/10.1016/j.vacuum.2020.109630.

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26

Tan, Yung-Fang, Min-Chen Chen, Yu-Hsuan Yeh, Chung-Wei Wu, Tsung-Ming Tsai, Ting-Chang Chang, Sheng-Yao Chou, Yen-Che Huang, and Simon M. Sze. "Utilizing high pressure hydrogen annealing to realize forming free CBRAM." Materials Science and Engineering: B 296 (October 2023): 116619. http://dx.doi.org/10.1016/j.mseb.2023.116619.

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27

Zhang, Bo, Vitezslav Zima, Tomas Mikysek, Veronika Podzemna, Pavel Rozsival, and Tomas Wagner. "Multilevel resistive switching in Cu and Ag doped CBRAM device." Journal of Materials Science: Materials in Electronics 29, no. 19 (August 3, 2018): 16836–41. http://dx.doi.org/10.1007/s10854-018-9778-5.

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28

Senapati, Asim, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta, and Siddheswar Maikap. "Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM." Electronics 9, no. 7 (July 7, 2020): 1106. http://dx.doi.org/10.3390/electronics9071106.

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Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al2O3 device shows superior memory parameters such as low forming voltage and higher switching uniformity as compared to the 20 nm-thick switching layer, owing to higher electric field across the material. Capacitance-voltage (CV) characteristics are observed for the Ag/Al2O3/TiN devices, suggesting the unipolar/bipolar resistive switching phenomena. Negative capacitance (NC) at low frequency proves inductive behavior of the CBRAM devices due to Ag ion migration into the Al2O3 oxide-electrolyte. Thicker Al2O3 film shows diode-like threshold switching behavior with long consecutive 10,000 cycles. It has been found that a thinner Al2O3 device has a larger on/off ratio of >108 as compared to a thicker one. Program/erase (P/E) cycles, read endurance, and data retention of the thinner Al2O3 oxide-electrolyte shows superior phenomena than the thicker electrolyte. The switching mechanism is also explored.

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29

Su, Chaohui, Linbo Shan, Dongliang Yang, Yanfei Zhao, Yujun Fu, Jiande Liu, Guangan Zhang, Qi Wang, and Deyan He. "Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices." Microelectronic Engineering 247 (July 2021): 111600. http://dx.doi.org/10.1016/j.mee.2021.111600.

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30

Taggart, J. L., W. Chen, Y. Gonzalez-Velo, H. J. Barnaby, K. Holbert, and M. N. Kozicki. "In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment." IEEE Transactions on Nuclear Science 65, no. 1 (January 2018): 192–99. http://dx.doi.org/10.1109/tns.2017.2779860.

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31

Song, Jeonghwan, Jiyong Woo, Seokjae Lim, Solomon Amsalu Chekol, and Hyunsang Hwang. "Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications." IEEE Electron Device Letters 38, no. 11 (November 2017): 1532–35. http://dx.doi.org/10.1109/led.2017.2757493.

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32

Zhao, Jiayi, Qin Chen, Xiaohu Zhao, Gaoqi Yang, Guokun Ma, and Hao Wang. "Self-compliance and high-performance GeTe-based CBRAM with Cu electrode." Microelectronics Journal 131 (January 2023): 105649. http://dx.doi.org/10.1016/j.mejo.2022.105649.

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33

Zhao, Xiaolong, Sen Liu, Jiebin Niu, Lei Liao, Qi Liu, Xiangheng Xiao, Hangbing Lv, et al. "Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer." Small 13, no. 35 (February 24, 2017): 1603948. http://dx.doi.org/10.1002/smll.201603948.

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34

Yuan, Huanmei, Tianqing Wan, and Hao Bai. "Resistive Switching Characteristic of Cu Electrode-Based RRAM Device." Electronics 12, no. 6 (March 20, 2023): 1471. http://dx.doi.org/10.3390/electronics12061471.

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The conductive bridge random access memory (CBRAM) device has been widely studied as a promising candidate for next-generation nonvolatile memory applications, where Cu as an electrode plays an important role in the resistive switching (RS) process. However, most studies only use Cu as one electrode, either the top electrode (TE) or the bottom electrode (BE); it is rarely reported that Cu is used as both TE and BE at the same time. In this study, we fabricated CBRAM devices by using Cu as both the TE and BE, and studied the RS characteristic of these devices. With Al2O3 as the switching layer (5~15 nm), the devices showed good bipolar RS characteristics. The endurance of the device could be as high as 106 cycles and the retention time could be as long as 104 s. The Al2O3 thickness influences the bipolar RS characteristic of the devices including the initial resistance, the forming process, endurance, and retention performance. The Cu electrode-based RRAM devices also present negative bias-suppressed complementary resistive switching (CRS) characteristics, which makes it effective to prevent the sneak path current or crosstalk problem in high-density memory array circuits.

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35

Berco, Dan, and Tseung-Yuen Tseng. "A numerical study of multi filament formation in metal-ion based CBRAM." AIP Advances 6, no. 2 (February 2016): 025212. http://dx.doi.org/10.1063/1.4942209.

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36

Radhakrishnan, J., A. Belmonte, L. Nyns, W. Devulder, G. Vereecke, G. L. Donadio, P. Kumbhare, et al. "Impact of La–OH bonds on the retention of Co/LaSiO CBRAM." Applied Physics Letters 117, no. 15 (October 12, 2020): 151902. http://dx.doi.org/10.1063/5.0021250.

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37

Lim, Seokjae, Myounghoon Kwak, and Hyunsang Hwang. "Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic Systems." IEEE Transactions on Electron Devices 65, no. 9 (September 2018): 3976–81. http://dx.doi.org/10.1109/ted.2018.2857494.

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38

Sankaran, K., L. Goux, S. Clima, M. Mees, J. A. Kittl, M. Jurczak, L. Altimime, G. M. Rignanese, and G. Pourtois. "Modeling of Copper Diffusion in Amorphous Aluminum Oxide in CBRAM Memory Stack." ECS Transactions 45, no. 3 (April 27, 2012): 317–30. http://dx.doi.org/10.1149/1.3700896.

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39

Gopalan, C., Y. Ma, T. Gallo, J. Wang, E. Runnion, J. Saenz, F. Koushan, P. Blanchard, and S. Hollmer. "Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS process." Solid-State Electronics 58, no. 1 (April 2011): 54–61. http://dx.doi.org/10.1016/j.sse.2010.11.024.

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40

Jeon, Yu-Rim, Yawar Abbas, Andrey Sergeevich Sokolov, Sohyeon Kim, Boncheol Ku, and Changhwan Choi. "Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device." ACS Applied Materials & Interfaces 11, no. 26 (June 7, 2019): 23329–36. http://dx.doi.org/10.1021/acsami.9b05384.

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41

Fujii, Shosuke, Jean Anne C. Incorvia, Fang Yuan, Shengjun Qin, Fei Hui, Yuanyuan Shi, Yang Chai, Mario Lanza, and H. S. Philip Wong. "Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance." IEEE Electron Device Letters 39, no. 1 (January 2018): 23–26. http://dx.doi.org/10.1109/led.2017.2771718.

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42

Shin, Jong Hoon, Qiwen Wang, and Wei D. Lu. "Self-Limited and Forming-Free CBRAM Device With Double Al2O3 ALD Layers." IEEE Electron Device Letters 39, no. 10 (October 2018): 1512–15. http://dx.doi.org/10.1109/led.2018.2868459.

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43

Yuhao Wang, Hao Yu, and Wei Zhang. "Nonvolatile CBRAM-Crossbar-Based 3-D-Integrated Hybrid Memory for Data Retention." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, no. 5 (May 2014): 957–70. http://dx.doi.org/10.1109/tvlsi.2013.2265754.

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44

Arita, Masashi, Yuuki Ohno, and Yasuo Takahashi. "Switching of Cu/MoO x /TiN CBRAM at MoO x /TiN interface." physica status solidi (a) 213, no. 2 (December 17, 2015): 306–10. http://dx.doi.org/10.1002/pssa.201532414.

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45

Belmonte, A., G. Reale, A. Fantini, J. Radhakrishnan, A. Redolfi, W. Devulder, L. Nyns, et al. "Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices." Solid-State Electronics 184 (October 2021): 108058. http://dx.doi.org/10.1016/j.sse.2021.108058.

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46

Dietrich, Stefan, Michael Angerbauer, Milena Ivanov, Dietmar Gogl, Heinz Hoenigschmid, Michael Kund, Corvin Liaw, et al. "A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control." IEEE Journal of Solid-State Circuits 42, no. 4 (April 2007): 839–45. http://dx.doi.org/10.1109/jssc.2007.892207.

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Taggart, J. L., R. B. Jacobs-Gedrim, M. L. McLain, H. J. Barnaby, E. S. Bielejec, W. Hardy, M. J. Marinella, M. N. Kozicki, and K. Holbert. "Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects." IEEE Transactions on Nuclear Science 66, no. 1 (January 2019): 69–76. http://dx.doi.org/10.1109/tns.2018.2882529.

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Dong, Zhipeng, Huan Zhao, Don DiMarzio, Myung-Geun Han, Lihua Zhang, Jesse Tice, Han Wang, and Jing Guo. "Atomically Thin CBRAM Enabled by 2-D Materials: Scaling Behaviors and Performance Limits." IEEE Transactions on Electron Devices 65, no. 10 (October 2018): 4160–66. http://dx.doi.org/10.1109/ted.2018.2830328.

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Liu, Yanming, Kunhe Yang, Xuefeng Wang, He Tian, and Tian-Ling Ren. "Lower Power, Better Uniformity, and Stability CBRAM Enabled by Graphene Nanohole Interface Engineering." IEEE Transactions on Electron Devices 67, no. 3 (March 2020): 984–88. http://dx.doi.org/10.1109/ted.2020.2968731.

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Ishikawa, Ryusuke, Shuichiro Hirata, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi, Masaki Kudo, and Syo Matsumura. "In-situElectron Microscopy of Cu Movement in MoOx/Al2O3Bilayer CBRAM during Cyclic Switching." ECS Transactions 80, no. 10 (October 25, 2017): 903–10. http://dx.doi.org/10.1149/08010.0903ecst.

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