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Journal articles on the topic 'Cd1-xZnxTe'

Author: Grafiati

Published: 28 May 2022

Last updated: 30 July 2025

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1

Nway, Han Myat Thin, and Kaung Pho. "Characterization of CdS/Cd1-xZnxTe Films." Dagon University Research Journal Vol.3, no. 2011 (2019): Pg.115–125. https://doi.org/10.5281/zenodo.3542347.

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A method of forming a compound film can be fabricated by using the cadmium sulphide (CdS) compound and cadmium zinc telluride (Cd1-xZnxTe) compounds with the ways of coating the pastes on the glass substrates and sintering the films in a suitable atmosphere. The structural properties of (CdS and Cd1-xZnxTe) compound powders were analyzed by X-ray diffraction (XRD) analysis. The electrical properties of the films were investigated by photoconductivity measurement. The n-CdS/p-Cd1-xZnxTe heterojunction solar cells were fabricated on glass substrates by screen printing method and by sintering met

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2

Orletskyi, I. G., M. I. Ilashchuk, E. V. Maistruk, M. M. Solovan, P. D. Maryanchuk, and S. V. Nichyi. "Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe." Ukrainian Journal of Physics 64, no. 2 (2019): 164. http://dx.doi.org/10.15407/ujpe64.2.164.

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Conditions for the production of rectifying semiconductor-insulator-semiconductor (SIS) heterostructures n-SnS2/CdTeO3/p-Cd1−xZnxTe with the use of the spray-pyrolysis of SnS2 thin films on p-Cd1−xZnxTe crystalline substrates with the formation of an intermediate tunnel-thin CdTeO3 oxide layer have been studied. By analyzing the temperature dependences of the current-voltage characteristics, the dynamics of the heterostructure energy parameters is determined, and the role of energy states at the CdTeO3/p-Cd1−xZnxTe interface in the formation of forward and reverse currents is elucidated. By an

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3

Zheng, Wei, Yu Li Wu, Yen Ting Chen, et al. "Determination of Bond Lengths and Electronic Structure of Cd_1-xZn_xTe Ternary Alloys by Synchrotron Radiation." Advanced Materials Research 706-708 (June 2013): 56–59. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.56.

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High-resolution synchrotron radiation x-ray absorption spectroscopy on Zn K-, Cd L3- and Te L3-edges for Cd1-xZnxTe ternary alloys with x = 0.10, 0.30, 0.50 and 0.90 are presented. A detailed analysis of the extended x-ray absorption fine structure using the IFEFFIT program, and the chemical bonds of Zn-Te are obtained, suggesting distortion of the Te sub-lattice. The x-ray absorption near-edge structure of the Zn K-, Cd L3- and Te L3-edge are investigated, and the electronic structures of Cd1-xZnxTe with various compositions are studied.

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4

Jiang, Jun. "Preparation and Performance of CdZnTe Ray Detector." Modern Electronic Technology 6, no. 1 (2022): 1. http://dx.doi.org/10.26549/met.v6i1.9507.

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γ-ray and x-ray detectors made by Cd1-xZnxTe alloy can gain high energy resolution and detect efficiency at room temperature due to its high atomic number, large energy gap and high density, which were well-developed recently. By well controlled of Cadmium partial pressure and compensatory doping technique, Ф90 mm Cd1-xZnxTe alloy obtained successfully (ρ≥1011 Ω·cm) by an improved-Bridgman method. 3 mm × 3 mm × 3 mm CZT detector was made at Kunming Institute of Physics, which has energy resolution of 3.52% (FWHM) at room temperature when detect 59.54 KeV Am241 γ-ray source.

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5

Hofmann, D. M., W. Stadler, P. Christmann, and B. K. Meyer. "Defects in CdTe and Cd1−xZnxTe." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 380, no. 1-2 (1996): 117–20. http://dx.doi.org/10.1016/s0168-9002(96)00287-2.

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6

Ferekides, C. S., R. Mamazza, U. Balasubramanian, and D. L. Morel. "Cd1−XZnXTe thin films and junctions." Thin Solid Films 480-481 (June 2005): 471–76. http://dx.doi.org/10.1016/j.tsf.2004.11.069.

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7

Yao, G. D., J. Wu, T. Fanning, and M. Dudley. "Investigation of Semiconductor Heterostructures by White Beam Synchrotron X-Ray Topography in Grazing Bragg-Laue and Conventional Bragg Geometries." Advances in X-ray Analysis 35, A (1991): 247–53. http://dx.doi.org/10.1154/s0376030800008892.

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AbstractWhite beam synchrotron X-ray topography has been applied both to the characterization of two semiconductor heterostructures, GaAs/Si and InxGa1-xAs/GaAs strained layers, and a substrate to be used for growing semiconductor epilayers, Cd1-xZnxTe. In the case of the heterostructures, misfit dislocations were observed using depth sensitive X-ray topographic imaging in grazing incidence Bragg-Laue geometries. The X-ray penetration depth, which can be varied from several hundreds of angstroms to hundreds of micrometers by rotating about the main reflection vector, which in this specific cas

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8

Fochuk, P., E. Nykonyuk, Z. Zakharuk, et al. "Comparison of Electrophysical Characteristics of Undoped Cd1 – xZnxTe, Cd1 – yMnyTe and Cd1 – x – yZnxMnyTe (x, y < 0,1) Crystals." Journal of Nano- and Electronic Physics 8, no. 4(1) (2016): 04011–1. http://dx.doi.org/10.21272/jnep.8(4(1)).04011.

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9

Brytan, V. B., Yu V. Pavlovskyy, Yu O. Uhryn, and R. M. Peleshchak. "Vanadium and Chlorine doping Influence on Magnetic Susceptibility of Cd0.9Zn0.1Te Monocrystals." Фізика і хімія твердого тіла 17, no. 2 (2016): 198–201. http://dx.doi.org/10.15330/pcss.17.2.198-201.

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The magnetic field experimental dependences of vanadium and chlorine doped Cd1-xZnxTe monocrystals magnetic susceptibility have been research. The magnetic susceptibility non-linearity has been observed. It is shown that this non-linearity due to super paramagnetic nature magnetic clusters forming.

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10

Terauchi, Hikaru, Yasuhiro Yoneda, Hirofumi Kasatani, et al. "Ferroelectric Behaviors in Semiconductive Cd1-xZnxTe Crystals." Japanese Journal of Applied Physics 32, S2 (1993): 728. http://dx.doi.org/10.7567/jjaps.32s2.728.

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11

Cavalcoli, D., B. Fraboni, and A. Cavallini. "Surface photovoltage spectroscopy analyses of Cd1−xZnxTe." Journal of Applied Physics 103, no. 4 (2008): 043713. http://dx.doi.org/10.1063/1.2885350.

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12

Zelaya-Angel, O., J. G. Mendoza-Alvarez, M. Becerril, H. Navarro-Contreras, and L. Tirado-Mejı́a. "On the bowing parameter in Cd1−xZnxTe." Journal of Applied Physics 95, no. 11 (2004): 6284–88. http://dx.doi.org/10.1063/1.1699493.

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13

Ruzin, A. "Simulation of compensated and overcompensated Cd1−xZnxTe." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 718 (August 2013): 361–62. http://dx.doi.org/10.1016/j.nima.2012.10.101.

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14

Zhu, Shi-fu, Bei-jun Zhao, Qi-feng Li, Feng-liang Yu, Shuang-yun Shao, and Xing-hua Zhu. "Modified growth of Cd1−xZnxTe single crystals." Journal of Crystal Growth 208, no. 1-4 (2000): 264–68. http://dx.doi.org/10.1016/s0022-0248(99)00409-1.

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15

Mazilu, M., D. Ohlmann, and B. Hönerlage. "Adjustable optical nonlinearities in Cd1−xZnxTe alloys." Journal of Luminescence 72-74 (June 1997): 824–25. http://dx.doi.org/10.1016/s0022-2313(96)00318-3.

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16

Gupta, P., K. K. Chattopadhyay, S. Chaudhuri, and A. K. Pal. "II?VI semiconductor alloy films: Cd1?xZnxTe." Journal of Materials Science 28, no. 2 (1993): 496–500. http://dx.doi.org/10.1007/bf00357829.

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17

Benguigui, L., R. Weil, E. Muranevich, A. Chack, E. Fredj, and Alex Zunger. "Ferroelectric properties of Cd1−xZnxTe solid solutions." Journal of Applied Physics 74, no. 1 (1993): 513–20. http://dx.doi.org/10.1063/1.355262.

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18

Parnham, Kevin B. "Recent progress in Cd1−xZnxTe radiation detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 377, no. 2-3 (1996): 487–91. http://dx.doi.org/10.1016/0168-9002(96)00026-5.

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19

Hofmann, D. M., W. Stadler, K. Oettinger, et al. "Structural properties of defects in Cd1−xZnxTe." Materials Science and Engineering: B 16, no. 1-3 (1993): 128–33. http://dx.doi.org/10.1016/0921-5107(93)90028-l.

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20

Wojciechowski, T., E. Janik, E. Dynowska, K. Fronc, and G. Karczewski. "Conductivity switching effect in Cd1–xZnxTe films." physica status solidi (c) 3, no. 4 (2006): 1197–200. http://dx.doi.org/10.1002/pssc.200564727.

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21

Kolesnikov, Nikolai, Elena Borisenko, Dmitrii Borisenko, and Boris Gnesin. "Ceramic materials made of CdTe and Cd-Zn-Te nanocrystalline powders." Open Chemistry 9, no. 4 (2011): 619–23. http://dx.doi.org/10.2478/s11532-011-0038-2.

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AbstractIn the present study newly produced semiconductor ceramic nanopowder materials made of CdTe and Cd1−xZnxTe (CZT) are considered. Common features and differences in microstructures, phase transformations, grain growth and properties of the ceramic materials of the binary and ternary compositions are studied.

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22

Wolf, Herbert, F. Wagner, J. Kronenberg, and Th Wichert. "On the Formation of Unusual Diffusion Profiles in Cd_xZn_1-xTe Crystals after Implantation of Different Elements." Defect and Diffusion Forum 289-292 (April 2009): 587–92. http://dx.doi.org/10.4028/www.scientific.net/ddf.289-292.587.

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It is known that the diffusion of Ag and Cu in Cd1 xZnxTe crystals exhibits unusual concentration profiles depending strongly on the external vapor pressure of Cd during diffusion. Recent experiments show that the dopant Na forms qualitatively the same diffusion profiles including the phenomenon of uphill diffusion. Also the transition elements Ni and Co show a strong dependence of the diffusion behavior on the external Cd pressure, but the shapes of the concentration profiles differ significantly from those known for Ag and Cu. The different behavior of Ag, Cu, and Na, on the one hand, and Ni

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23

Koç, Mehmet, Giray Kartopu, and Selcuk Yerci. "Combined Optical-Electrical Optimization of Cd1−xZnxTe/Silicon Tandem Solar Cells." Materials 13, no. 8 (2020): 1860. http://dx.doi.org/10.3390/ma13081860.

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Although the fundamental limits have been established for the single junction solar cells, tandem configurations are one of the promising approaches to surpass these limits. One of the candidates for the top cell absorber is CdTe, as the CdTe photovoltaic technology has significant advantages: stability, high performance, and relatively inexpensive. In addition, it is possible to tune the CdTe bandgap by introducing, for example, Zn into the composition, forming Cd1−xZnxTe alloys, which can fulfill the Shockley–Queisser limit design criteria for tandem devices. The interdigitated back contact

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24

Alfadhili, Fadhil K., Geethika K. Liyanage, Adam B. Phillips, and Michael J. Heben. "Development of CdCl2 Activation to Minimize Zn Loss from Sputtered Cd1-xZnxTe Thin Films for Use in Tandem Solar Cells." MRS Advances 3, no. 52 (2018): 3129–34. http://dx.doi.org/10.1557/adv.2018.521.

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ABSTRACTIncreasing the band gap of cadmium telluride (CdTe) from 1.48 eV to > 2 eV can be achieved by alloying CdTe with ZnTe. Like CdTe, the alloyed films are expected to allow for low cost production, suggesting that Cd1-xZnxTe could be an ideal top cell for mass produced tandem devices. However, the CdCl2 activation of the alloyed films results in a significant loss of Zn, thereby reducing the bandgap. In this study, we demonstrate a novel CdCl2 activation method that does not result in significant Zn loss. By performing the activation step in a closed, inert environment we are able to a

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25

Dremlyuzhenko, S. G. "State of Cd1-xZnxTe and Cd1-xMnxTe surface depending on treatment type." Semiconductor Physics, Quantum Electronics and Optoelectronics 7, no. 1 (2004): 52–55. http://dx.doi.org/10.15407/spqeo7.01.052.

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26

Alhaddad, T., M. B. Shoker, O. Pagès, et al. "Raman study of Cd_1−xZn_xTe phonons and phonon–polaritons—Experiment and ab initio calculations." Journal of Applied Physics 133, no. 6 (2023): 065701. http://dx.doi.org/10.1063/5.0134454.

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Backward/near-forward Raman scattering and ab initio Raman/phonon calculations are combined, together with x-ray diffraction and ellipsometry measurements to further inform the debate on the compact phonon behavior of the II–VI Cd1−xZnxTe alloy. The compacity favors the coupling of polar optic modes in both the transverse and longitudinal symmetries via the related [Formula: see text] long-wave electric fields. The [Formula: see text]-coupling achieves maximum in the Zn-dilute limit, which enhances the (upper) ZnTe-like (impurity) mode at the expense of the (lower) CdTe-like (matrix-like) one,

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27

Maistruk, E. V., I. P. Koziarskyi, D. P. Koziarskyi та P. D. Maryanchuk. "Electrical Properties of the Сu2O/Cd1 – xZnxTe Heterostructure". Journal of Nano- and Electronic Physics 11, № 2 (2019): 02007–1. http://dx.doi.org/10.21272/jnep.11(2).02007.

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28

Giakos, G. C., B. Pillai, S. Vedantham, et al. "Optimization of Cd1–xZnxTe Detectors for Digital Radiography." Journal of X-Ray Science and Technology 7, no. 1 (1997): 37–49. http://dx.doi.org/10.3233/xst-1997-7104.

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29

Brovko, A., O. Amzallag, A. Adelberg, and A. Ruzin. "Printed silver contacts for Cd1−xZnxTe radiation detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1014 (October 2021): 165696. http://dx.doi.org/10.1016/j.nima.2021.165696.

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30

Feldman, R. D., R. F. Austin, A. H. Dayem, and E. H. Westerwick. "Growth of Cd1−xZnxTe by molecular beam epitaxy." Applied Physics Letters 49, no. 13 (1986): 797–99. http://dx.doi.org/10.1063/1.97550.

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31

Ohlmann, D., M. Mazilu, R. Levy, and B. Hönerlage. "Tunable optical nonlinearities in Cd1−xZnxTe ternary alloys." Journal of Applied Physics 82, no. 3 (1997): 1355–58. http://dx.doi.org/10.1063/1.365910.

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32

Oettinger, K., D. M. Hofmann, Al L. Efros, B. K. Meyer, M. Salk, and K. W. Benz. "Excitonic line broadening in bulk grown Cd1−xZnxTe." Journal of Applied Physics 71, no. 9 (1992): 4523–26. http://dx.doi.org/10.1063/1.350798.

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33

Alexandrou, A., M. K. Jackson, D. Hulin, N. Magnea, H. Mariette, and Y. Merle d’Aubigné. "Hole delocalization in CdTe/Cd1−xZnxTe quantum wells." Physical Review B 50, no. 4 (1994): 2727–30. http://dx.doi.org/10.1103/physrevb.50.2727.

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34

Chen, Y. F., C. S. Tsai, Y. H. Chang, Y. M. Chang, T. K. Chen, and Y. M. Pang. "Hydrogen passivation in Cd1−xZnxTe studied by photoluminescence." Applied Physics Letters 58, no. 5 (1991): 493–95. http://dx.doi.org/10.1063/1.104618.

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35

Chattopadhyay, KK, A. Sarkar, S. Chaudhuri, and AK Pal. "Preparation and optical properties of Cd1−xZnxTe films." Vacuum 42, no. 17 (1991): 1113–16. http://dx.doi.org/10.1016/0042-207x(91)90183-j.

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36

Hirata, K., and O. Oda. "Lattice constants of Cd1−xZnxTe mixed compound semiconductor." Materials Letters 5, no. 1-2 (1986): 42–44. http://dx.doi.org/10.1016/0167-577x(86)90088-1.

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37

Qadri, S. B., E. F. Skelton, A. W. Webb, J. Z. Hu, J. Kennedy, and C. Kim. "Phase Transitions in Cd1-xZnxTe(0.LEQ.x.LEQ.0.55)." REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY 7 (1998): 319–21. http://dx.doi.org/10.4131/jshpreview.7.319.

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38

Koh, A. K., D. J. Miller, and C. T. Grainger. "Hyperfine coupling constant in manganese-doped Cd1−xZnxTe." Journal of Physics and Chemistry of Solids 47, no. 8 (1986): 789–93. http://dx.doi.org/10.1016/0022-3697(86)90007-7.

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39

Yujie, Li, Ma Guoli, Zhan Xiaona, and Jie Wanqi. "The annealing of Cd1−xZnxTe in CdZn vapors." Journal of Electronic Materials 31, no. 8 (2002): 834–40. http://dx.doi.org/10.1007/s11664-002-0192-6.

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40

Benhlal, J. T., R. Granger, D. Lemoine, R. Triboulet, and Y. Marqueton. "Irreversible optical response in Cd1−xZnxTe mixed crystals." Journal of Crystal Growth 117, no. 1-4 (1992): 281–84. http://dx.doi.org/10.1016/0022-0248(92)90760-g.

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41

Yom, S. S., S. Perkowitz, P. M. Amirtharaj, and J. J. Kennedy. "Picosecond photoluminescence from bound excitons in Cd1−xZnxTe." Solid State Communications 65, no. 9 (1988): 1055–58. http://dx.doi.org/10.1016/0038-1098(88)90756-9.

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42

Giakos, G. "Optimization of Cd1−xZnxTe Detectors for Digital Radiography." Journal of X-Ray Science and Technology 7, no. 1 (1997): 37–49. http://dx.doi.org/10.1006/jxra.1997.0248.

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43

Tuffigo, H., R. T. Cox, N. Magnea, Y. Merle d’Aubigné, and A. Million. "Luminescence from quantized exciton-polariton states inCd1−xZnxTe/CdTe/Cd1−xZnxTe thin-layer heterostructures." Physical Review B 37, no. 8 (1988): 4310–13. http://dx.doi.org/10.1103/physrevb.37.4310.

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44

Brovko, Artem, and Arie Ruzin. "Study of material uniformity in high-resistivity Cd1−xZnxTe and Cd1−xMnxTe crystals." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 958 (April 2020): 161996. http://dx.doi.org/10.1016/j.nima.2019.03.051.

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45

Takeyama, S., G. Grabecki, S. Adachi, et al. "Exciton Magneto-Optical Study on Single Quantum Wells, Cd1-xZnxTe/Cd1-x'-yZnx'MnyTe." Acta Physica Polonica A 88, no. 5 (1995): 945–48. http://dx.doi.org/10.12693/aphyspola.88.945.

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46

Dremlyuzhenko, S. G., Z. I. Zakharuk, A. I. Savchuk, and P. M. Fochuk. "Effect of treatment on the CdTe, Cd1–xMnxTe and Cd1–xZnxTe surface stoichiometry." physica status solidi (b) 244, no. 5 (2007): 1650–54. http://dx.doi.org/10.1002/pssb.200675124.

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47

Qadri, S. B., E. F. Skelton, A. W. Webb, and J. Kennedy. "Evidence for bond strengthening in Cd1−xZnxTe (x=0.04)." Applied Physics Letters 46, no. 3 (1985): 257–59. http://dx.doi.org/10.1063/1.95650.

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48

Amirtharaj, P. M., J. H. Dinan, J. J. Kennedy, P. R. Boyd, and O. J. Glembocki. "Photoreflectance study of Hg0.7Cd0.3Te and Cd1−xZnxTe: E1 transition." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, no. 4 (1986): 2028–33. http://dx.doi.org/10.1116/1.574021.

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49

Sang, Wenbin, Yongbiao Qian, Weiming Shi, Linjun Wang, Ju Yang, and Donghua Liu. "Equilibrium partial pressures and crystal growth of Cd1−xZnxTe." Journal of Crystal Growth 214-215 (June 2000): 30–34. http://dx.doi.org/10.1016/s0022-0248(00)00048-8.

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50

Szeles, Cs, Y. Y. Shan, K. G. Lynn, and E. E. Eissler. "Deep electronic levels in high-pressure Bridgman Cd1−xZnxTe." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 380, no. 1-2 (1996): 148–52. http://dx.doi.org/10.1016/s0168-9002(96)00331-2.

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