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Journal articles on the topic 'CdS / CdTe heterojunction'

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1

Yang, Wei Yong, Kui Ying Li, Sai Ling Wei, Guang Jing Song, and Jan Zhang. "Relationship between Microstructure and Photoelectron Behaviors of CdTe/Ligand Self-Assembly Quantum Dots." Materials Science Forum 685 (June 2011): 114–18. http://dx.doi.org/10.4028/www.scientific.net/msf.685.114.

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A water-soluble CdTe QDs capped by 3-Mercaptopropionic acid (MPA) were synthesized. The results confirmed that the grain size of the QDs was controlled by changing the reflux time of precursor solution and that the QDs possessed obviously quantum size effect. The results showed that a depletion layer CdTe1-xSx(0£x≤1) formed in between CdTe nanoparticle and ligand MPA. It is believed that two heterojunction-like structures possess quite distinct surface photovoltaic characteristic excited between the core-CdTe and the shell-CdS, and between CdTe/CdS and the ligand MPA, respectively, according t
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2

Zeng, Guanggen, Paul Harrison, Ali Kidman, Alaa Al-mebir, Lianghuan Feng, and Judy Wu. "Nondestructive Investigation of Heterojunction Interfacial Properties Using Two-Wavelength Raman Spectroscopy on Thin-Film CdS/CdTe Solar Cells." Applied Spectroscopy 70, no. 9 (2016): 1555–60. http://dx.doi.org/10.1177/0003702816643545.

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Raman spectra specific to CdS and CdTe were obtained on the CdS/CdTe heterojunction interface by employing two excitation wavelengths of λ1 = 488 nm and λ2 = 633 nm, respectively, from the glass side of Glass/FTO/CdS/CdTe/HgTe:Cu:graphite/Ag solar cells fabricated using pulsed-laser deposition (PLD). This two-wavelength Raman spectroscopy approach, with one wavelength selected below the absorption edge of the window layer (λ2 in this case), allows nondestructive characterization of the CdS/CdTe heterojunction and therefore correlation of the interfacial properties with the solar cell performan
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3

Jayswal, Niva K., Dipendra Adhikari, Indra Subedi, Ambalanath Shan, and Nikolas J. Podraza. "Role of CdTe Interface Structure on CdS/CdTe Photovoltaic Device Performance." Materials 16, no. 20 (2023): 6812. http://dx.doi.org/10.3390/ma16206812.

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Glancing angle deposition (GLAD) of CdTe can produce a cubic, hexagonal, or mixed phase crystal structure depending upon the oblique deposition angles (Φ) and substrate temperature. GLAD CdTe films are prepared at different Φ at room temperature (RT) and a high temperature (HT) of 250 °C and used as interlayers between the n-type hexagonal CdS window layer and the p-type cubic CdTe absorber layer to investigate the role of interfacial tailoring at the CdS/CdTe heterojunction in photovoltaic (PV) device performance. The Φ = 80° RT GLAD CdTe interlayer and CdS both have the hexagonal structure,
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4

Zeng, Guanggen, Jingquan Zhang, Wenwu Wang, and Lianghuan Feng. "Correlation of Interfacial Transportation Properties of CdS/CdTe Heterojunction and Performance of CdTe Polycrystalline Thin-Film Solar Cells." International Journal of Photoenergy 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/519386.

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The light and dark output performances of CdS/CdTe solar cells made by close-spaced sublimation (CSS) were investigated to elucidate the transportation properties of carriers at CdS/CdTe heterojunction interface. It has been found that the interfacial transportation properties were relatively sensitive to variations of the characteristics of heterojunction due to the series resistance and shunting effects. For the high quality cell with 12.1% efficiency, narrow depletion region of ~1.1 microns and large electric field intensity of ~1.3 V/μm allow the sufficient energy-band bending close to CdS
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5

Kuddus, Abdul, Md Ferdous Rahman, Jaker Hossain, and Abu Bakar Md Ismail. "Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach." European Physical Journal Applied Physics 92, no. 2 (2020): 20901. http://dx.doi.org/10.1051/epjap/2020200213.

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This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on sp
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6

Fang, Zhou, Xiao Chen Wang, Hong Cai Wu, and Ce Zhou Zhao. "Achievements and Challenges of CdS/CdTe Solar Cells." International Journal of Photoenergy 2011 (2011): 1–8. http://dx.doi.org/10.1155/2011/297350.

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Thin film CdS/CdTe has long been regarded as one promising choice for the development of cost-effective and reliable solar cells. Efficiency as high as 16.5% has been achieved in CdS/CdTe heterojunction structure in laboratory in 2001, and current techniques for CdS/CdTe solar cells gradually step toward commercialization. This paper reviews some novel techniques mainly within two years to solve this problem from aspects of promotion of fabrication technology, structural modification, and choice of back contact materials.
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7

Liyanage, W. P. R., and M. Nath. "CdS–CdTe heterojunction nanotube arrays for efficient solar energy conversion." Journal of Materials Chemistry A 4, no. 38 (2016): 14637–48. http://dx.doi.org/10.1039/c6ta03572h.

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8

Ayad Khedhair Al-mebir, Alaa. "Interdiffusion of Zinc-Stannate Buffer Layer and Cadmium Sulfide Heterojunction and Its Correlation with CdCl2 Treatment." University of Thi-Qar Journal of Science 7, no. 1 (2019): 128–33. http://dx.doi.org/10.32792/utq/utjsci/v7i1.264.

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In this paper, a highly transparent and conductive Zinc Stannate (Zn2SnO4) buffer layer is integrated between the transparent conductive oxide (TCO) layer and the Cadmium Sulfide (CdS) window layer to improve the optical properties of (TCO\Zn2SnO4\CdS\CdTe) heterojunctions in CdTe\CdS solar cells. This buffer layer is used to reduce the excess interdiffusion between the window and absorber layers when Ultra-thin CdS window layer, d < 100 nm, is employed, and post CdCl2 treatment is applied at high temperature after deposition of CdTe layer. The fabricated Zinc Stannate (Zn2SnO4) buffer laye
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9

Alnajjar, Abdalla A., Maysoon F. A. Alias, Rasha A. Almatuk, and Ala A. J. Al-Douri. "The characteristics of anisotype CdS/CdTe heterojunction." Renewable Energy 34, no. 10 (2009): 2160–63. http://dx.doi.org/10.1016/j.renene.2009.01.008.

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10

Nykyruy, L. `., O. Yaremiichuk, Z. Zapukhlyak, et al. "Optical properties of CdS/CdTe heterojunction prepared by physical vapor deposition technique." Фізика і хімія твердого тіла 19, no. 3 (2019): 209–16. http://dx.doi.org/10.15330/pcss.19.3.209-216.

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The paper presents the study of the optical properties of a thin layer of Cadmium Sulphide deposited on Cadmium Telluride films. CdTe thin films were obtained by vapor phase condensation method using different technological factors, in particular, different thickness (different time of deposition τ) on glass substrates. After deposition the optical properties were analysed by Swanepoel method, using transmission spectra. The upper thin layer of CdS was deposited by thermal evaporation method on CdTe thin films. The change in optical properties of CdS/CdTe heterojunction in comparison with CdTe
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11

A., Thabet, Abdelhady S., and University Aswan. "Design modern structure for heterojunction quantum dot solar cells." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 3 (2020): 2918–25. https://doi.org/10.11591/ijece.v10i3.pp2918-2925.

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This paper proposal new structure for improving the optical, electrical characteristics and efficiency of 3 rd generation heterojunction quantum dot solar cell (HJQDSC) (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers cell. Also, this paper presents theoretically analysis for the performance of the proposal HJQDSC (ITO/QDCdS/QDPbS/Au) structure. The new design structure was applied on traditional (SnO2/CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo) thin film solar cells which based on sub-micro absorber layer thickness models by replacing the bulk CdTe, CIGS
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12

Lee, Jae-Hyeong. "Characterization of CdS Thin Films and CdS/CdTe Heterojunction Prepared by Different Techniques." Journal of the Korean Institute of Electrical and Electronic Material Engineers 18, no. 3 (2005): 199–205. http://dx.doi.org/10.4313/jkem.2005.18.3.199.

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13

Thabet, A., S. Abdelhady, and Youssef Mobarak. "Design modern structure for heterojunction quantum dot solar cells." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 3 (2020): 2918. http://dx.doi.org/10.11591/ijece.v10i3.pp2918-2925.

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This paper proposal new structure for improving the optical, electrical characteristics and efficiency of 3rd generation heterojunction quantum dot solar cell (HJQDSC) (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers cell. Also, this paper presents theoretically analysis for the performance of the proposal HJQDSC (ITO/QDCdS/QDPbS/Au) structure. The new design structure was applied on traditional (SnO2/CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo) thin film solar cells which based on sub-micro absorber layer thickness models by replacing the bulk CdTe, CIGS a
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14

Prateek, Aditi Priyadarshini, Kumar Nikhil, S K Choubey, K P Tiwary, and Rajeev Ranjan. "Study of Fabrication Process and Performance Analysis of the CDS/CDTE Based Photovoltaic Cell." International Research Journal on Advanced Engineering Hub (IRJAEH) 2, no. 05 (2024): 1421–26. http://dx.doi.org/10.47392/irjaeh.2024.0195.

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Fabrication of CDS/CDTE based heterojunction photovoltaic cell has been undertaken to explore better light conversion efficiency. We have developed a photovoltaic cell using glass coated with Indium doped Tin Oxide (ITO) which works as transparent conducting oxide (TCO). ITO coated glass has promising prospects of enhancing the efficiency of the photovoltaic cell. ITO layers are known to be employed as anode terminal due to the negative polarity they possess compared to the whole PV cell; here, we have employed it for the same function as the front layer. During fabrication of the photovoltaic
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15

Tomita, Yasuhiro, Toshiaki Kawai, and Yoshinori Hatanaka. "Properties of Sputter-Deposited CdS/CdTe Heterojunction Photodiode." Japanese Journal of Applied Physics 33, Part 1, No. 6A (1994): 3383–88. http://dx.doi.org/10.1143/jjap.33.3383.

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16

Rakhshani, A. E. "Heterojunction properties of electrodeposited CdTe/CdS solar cells." Journal of Applied Physics 90, no. 8 (2001): 4265–71. http://dx.doi.org/10.1063/1.1397279.

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17

Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu, and S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the s
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18

Assem, E. E., A. Ashour, E. R. Shaaban, and A. Qasem. "Implications changing of the CdS window layer thickness on photovoltaic characteristics of n-CdS/i-AgSe/p-CdTe solar cells." Chalcogenide Letters 19, no. 11 (2022): 825–39. http://dx.doi.org/10.15251/cl.2022.1911.825.

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Rietveld refinement techniques have been used to investigate the structural characteristics of CdS window layers at various thicknesses in the current study. The structural parameters were improved as the thickness of the CdS-layer was raised, according to XRD patterns. This, in turn, was owing to the increase in the crystal's size for the studied thin layers. For the Ni/n-CdS/i-AgSe/p-CdTe/Pt heterojunction that was successfully fabricated employing an AgSe buffer layer deposited directly on the p-CdTe absorber layer and then the CdS window layer deposited on these mentioned layers, the photo
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19

A.H. AL-abbasy, Bashar. "A Study Of Photoelectrical Characteristics Of (CdS/CdTe) Heterojunction." AL-Rafdain Engineering Journal (AREJ) 19, no. 2 (2011): 68–76. http://dx.doi.org/10.33899/rengj.2011.27347.

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20

Tomita, Yasuhiro, Toshiaki Kawai, and Yoshinori Hatanaka. "Carrier Transport Properties of Sputter-Deposited CdS/CdTe Heterojunction." Japanese Journal of Applied Physics 32, Part 1, No. 5A (1993): 1923–28. http://dx.doi.org/10.1143/jjap.32.1923.

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21

Chu, T. L., S. S. Chu, C. Ferekides, C. Q. Wu, J. Britt, and C. Wang. "High efficiency thin film CdS/CdTe heterojunction solar cells." Journal of Crystal Growth 117, no. 1-4 (1992): 1073. http://dx.doi.org/10.1016/0022-0248(92)90916-7.

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22

Chou, H. C., A. Rohatgi, N. M. Jokerst, et al. "Approach toward high efficiency CdTe/CdS heterojunction solar cells." Materials Chemistry and Physics 43, no. 2 (1996): 178–82. http://dx.doi.org/10.1016/0254-0584(95)01626-6.

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23

Delahoy, Alan E., Shou Peng, Payal Patra, et al. "Cadmium Tin Oxide and Zinc Magnesium Oxide Prepared by Hollow Cathode Sputtering for CdTe Photovoltaics." MRS Advances 2, no. 53 (2017): 3203–14. http://dx.doi.org/10.1557/adv.2017.407.

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ABSTRACTThis work reports the fabrication and characterization of superstrate-type Zn1-xMgxO/CdTe heterojunction solar cells on both CdxSnyO and commercial SnO2:F transparent conducting oxides (TCOs) in which the ZMO and CTO layers are produced for the first time by hollow cathode sputtering. The sputtering is conducted in a reactive mode using metal or alloyed metal targets fitted to a custom-made linear cathode. It is notable that the CdS buffer layer conventionally employed in CdTe solar cells is entirely replaced by the ZMO window layer. The use of ZMO is found to eliminate the blue loss a
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24

Olexander, Bolbas, Deyneko Natalya, Yeremenko Sergey, et al. "DEGRADATION OF CDTE SC DURING OPERATION: MODELING AND EXPERIMENT." Eastern-European Journal of Enterprise Technologies 6, no. 12 (102) (2019): 46–51. https://doi.org/10.15587/1729-4061.2019.185628.

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The mechanisms of CdTe SС degradation during operation are experimentally studied. Two mechanisms of degradation of such solar cells are identified. The first is the generation of defects in the transition region, which is caused by excess charge carriers and defects. The second is the increase in the back barrier. The study of the current-voltage and voltage-capacitance characteristics of solar cells allowed proposing a model of degradation of solar cells based on CdTe. It is found that the presence of copper in the back contact is associated with better initial efficiency, but also the faste
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25

Liyanage, Geethika K., Adam B. Phillips, Fadhil K. Alfadhili, and Michael J. Heben. "Numerical Modelling of Front Contact Alignment for High Efficiency Cd1-xZnxTe and Cd1-xMgxTe Solar Cells for Tandem Devices." MRS Advances 3, no. 52 (2018): 3121–28. http://dx.doi.org/10.1557/adv.2018.501.

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AbstractWide bandgap Cd1-xZnxTe (CZT) and Cd1-xMgxTe (CMT) have drawn attention as top cells in tandem devices. These materials allow tuning of the band gap over a wide range by controlling the Zn or Mg concentration with little alteration to the base CdTe properties. Historically, CdS has been used as a heterojunction partner for CZT or CMT devices. However, these devices show a significant lower open circuit voltage (VOC) than expected for wide bandgap absorbers. Recent modelling work suggests that poor band alignment between the CdS emitter and absorber results in a high concentration of ho
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26

Natalya, Deyneko, Kovalev Pavlo, Semkiv Oleg, Khmyrov Igor, and Shevchenko Roman. "DEVELOPMENT OF A TECHNIQUE FOR RESTORING THE EFFICIENCY OF FILM ITO/CDS/CDTE/CU/AU SCS AFTER DEGRADATION." Eastern-European Journal of Enterprise Technologies 1, no. 5 (97) (2019): 6–12. https://doi.org/10.15587/1729-4061.2019.156565.

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A study into the influence of direct polarity on the output parameters of ITO/CdS/CdTe/Cu/Au solar cells (SC) has been conducted. We have experimentally registered the effect of an electric field of direct polarity on the output parameters and light diode characteristics of ITO/CdS/CdTe/Cu/Au SCs, which underwent a degradation of efficiency. When a shaded SE is exposed for not less than 120 minutes to the electric field, induced by an external DC voltage of magnitude (0.5‒0.9) V, whose polarity corresponds to the forward bias of n-p heterojunction, there is an increase in efficiency coefficien
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27

Sohn, SangHo, MaengJun Kim, and SungHo Lee. "A Quasi-gaseous CdCl2 Treatment of a CdTe/CdS Heterojunction." Journal of the Korean Physical Society 57, no. 6(1) (2010): 1820–25. http://dx.doi.org/10.3938/jkps.57.1820.

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28

Vatavu, Sergiu, and Petru GaŞin. "The analysis of current flow mechanism in CdS/CdTe heterojunction." Thin Solid Films 515, no. 15 (2007): 6179–83. http://dx.doi.org/10.1016/j.tsf.2006.12.086.

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29

Bhattacharya, R. N., and K. Rajeshwar. "Heterojunction CdS/CdTe solar cells based on electrodepositedp‐CdTe thin films: Fabrication and characterization." Journal of Applied Physics 58, no. 9 (1985): 3590–93. http://dx.doi.org/10.1063/1.335735.

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30

Talhi, A., B. Azeddine, Z. Tiouti, and M. Rajczyk. "Modelling and simulation of PN junction CdS/CdTe for betavoltaic cell." Chalcogenide Letters 20, no. 4 (2023): 243–49. http://dx.doi.org/10.15251/cl.2023.204.243.

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The method for producing power by integrating a beta source to semiconductors junction’s devices is called as betavoltaic energy conversion. [1]. In this study by using Monte Carlo (MC) method to simulate the distribution of electron- hole pairs (EHP) generated at each point in the cell under bombardment of 63Ni source for betavoltaic cell then the result of that Monte Carlo simulation will be used in the modelling and simulation of a betavoltaic cell CdS/CdTe heterojunction and their characteristics.
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31

Ballipinar, Faruk, Naoki Kitamura, Abhishek Nandur, and Alok C. Rastogi. "Cadmium Oxysulfide Cd(S,O) as Novel High Transmittance Buffer Layer Formed by Surfactant Mediated Chemical Bath Deposition for Thin-Film Heterojunction Solar Cells." MRS Advances 1, no. 41 (2016): 2833–38. http://dx.doi.org/10.1557/adv.2016.527.

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ABSTRACTPolycrystalline <100 nm thin CdS films deposited by the chemical bath deposition (CBD) method are used as n-type window layer in high efficiency heterojunction CuInSe2, Cu2ZnSnS4, and CdTe solar cells. The major shortcoming of the CdS films is its stability and high sub-bandgap absorption. In the present work, an alternative window layer for the heterojunction solar cells based on cadmium oxysulfide Cd(S,O) thin films formed by the CBD method is described. The ∼100 nm thin Cd(S,O) films formed by co-deposition of CdS with CdO show high >85% optical transmittance over 550-1000 nm
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32

Sebak, M. A., S. Ghalab, Atef El-Taher, and E. R. Shaaban. "Studying the structural, optical spectroscopic ellipsometry and electrical properties of variable-CdS thickness/CdTe for solar cell applications." Chalcogenide Letters 19, no. 6 (2022): 389–408. http://dx.doi.org/10.15251/cl.2022.196.389.

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"The structural and optical properties of CdS window layer at different thicknesses in the range of (100-300 nm) deposited on pre-cleaned glass substrates (CdS/glasses) via the thermal evaporation process are studied in the current work. The structural analysis is done using Rietveld refinement and atomic pressure microscope techniques. The films of CdS/glass showcase a wurtzite behavior. XRD and AFM tests are confirmed that the structural parameters improve as the thickness of the CdS-layer increases. The optical constants (the refractive index n, the extinction coefficient, k and the bandgap
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33

Asghar, Muhammad. "Growth And Characterization Of Graphite Doped CdTe/CdS Thin Film Heterojunction." Advanced Materials Letters 8, no. 8 (2017): 878–82. http://dx.doi.org/10.5185/amlett.2017.7094.

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34

Rogers, K. D., J. D. Painter, M. J. Healy, D. W. Lane, and M. E. Ozsan. "The crystal structure of CdS–CdTe thin film heterojunction solar cells." Thin Solid Films 339, no. 1-2 (1999): 299–304. http://dx.doi.org/10.1016/s0040-6090(98)01343-1.

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35

Singh, Vijay P., John C. McClure, G. B. Lush, et al. "Thin film CdTe-CdS heterojunction solar cells on lightweight metal substrates." Solar Energy Materials and Solar Cells 59, no. 1-2 (1999): 145–61. http://dx.doi.org/10.1016/s0927-0248(99)00039-2.

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36

Mathur, AS, and BP Singh. "Study of effect of defects on CdS/CdTe heterojunction solar cell." Optik 212 (June 2020): 164717. http://dx.doi.org/10.1016/j.ijleo.2020.164717.

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37

Bayhan, H., and C. Erçelebi. "Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices." Semiconductor Science and Technology 12, no. 5 (1997): 600–608. http://dx.doi.org/10.1088/0268-1242/12/5/014.

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38

Tomita, Y., Y. Hatanaka, T. Takabayashi, and T. Kawai. "X-ray imaging camera tube using sputter-deposited CdTe/CdS heterojunction." IEEE Transactions on Electron Devices 40, no. 2 (1993): 315–19. http://dx.doi.org/10.1109/16.182507.

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39

Zyoud, Samer H., Ahed H. Zyoud, Naser M. Ahmed, and Atef F. I. Abdelkader. "Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non–Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS–1D Software." Crystals 11, no. 12 (2021): 1454. http://dx.doi.org/10.3390/cryst11121454.

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Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program was used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin–film buffer layer is frequently employed as a traditional n–type heterojunction partner. In this study, numerical simulation was used to determine a suitable non–toxic material for the buffer layer that can be used instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS and In2S3) and
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40

Akbarnejad, E., Z. Ghorannevis, E. Mohammadi, and L. Fekriaval. "Correlation between different CdTe nanostructures and the performances of solar cells based on CdTe/CdS heterojunction." Journal of Electroanalytical Chemistry 849 (September 2019): 113358. http://dx.doi.org/10.1016/j.jelechem.2019.113358.

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41

Almohammedi, A., and E. R. Shaaban. "Spectroscopic ellipsometry and photovoltaic characteristics for n-CdS/p-Cu2ZnSnS4 heterojunction by annealing for solar cells." Chalcogenide Letters 19, no. 10 (2022): 701–14. http://dx.doi.org/10.15251/cl.2022.1910.701.

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Owing to its direct bandgap in the range to be used as an absorbent material and due to its high absorption rate, kesterite Cu2ZnSnS4 (CZTS) is a p-type prospective absorber material (with thickness 500 nm) for solar cell applications. Kesterite Cu2ZnSnS4 (CZTS) thin films were prepared using the thermal evaporation technique. The (CZTS) thin films were annealed at different annealing temperatures chosen according to TGA analysis in the range of (400o C, 450o C, 475o C, and 500o C). The influence of annealing temperatures on the structural, morphology and optical properties of the CZTS films w
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42

Duffy, N. W., D. Lane, M. E. Özsan, L. M. Peter, K. D. Rogers, and R. L. Wang. "Structural and spectroscopic studies of CdS/CdTe heterojunction cells fabricated by electrodeposition." Thin Solid Films 361-362 (February 2000): 314–20. http://dx.doi.org/10.1016/s0040-6090(99)01120-7.

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Bayhan, Habibe, and A. Sertap Kavasoğlu. "Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se2 heterojunction solar cells." Solid-State Electronics 49, no. 6 (2005): 991–96. http://dx.doi.org/10.1016/j.sse.2005.03.012.

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Singh, V. P., D. L. Linam, D. W. Dils, J. C. McClure, and G. B. Lush. "Electro-optical characterization and modeling of thin film CdS–CdTe heterojunction solar cells." Solar Energy Materials and Solar Cells 63, no. 4 (2000): 445–66. http://dx.doi.org/10.1016/s0927-0248(00)00063-5.

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Chou, H. C., A. Rohatgi, E. W. Thomas, S. Kamra, and A. K. Bhat. "Effects of Cu on CdTe / CdS Heterojunction Solar Cells with Au/Cu Contacts." Journal of The Electrochemical Society 142, no. 1 (1995): 254–59. http://dx.doi.org/10.1149/1.2043891.

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Gao, Jun-Ning, Wan-Qi Jie, Yan-Yan Yuan, et al. "In-Situ SRPES Study on the Band Alignment of (0001)CdS/CdTe Heterojunction." Chinese Physics Letters 29, no. 5 (2012): 057301. http://dx.doi.org/10.1088/0256-307x/29/5/057301.

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A.A.Al-Hamdani, Kadhim, Ghuson H.Mohamed, and Enas S.Y. Al-Mizban. "Study the Effect of Thermal Treatment and Variation of CdS Thickness on Structural Properties of CdS/CdTe Heterojunction." Journal of University of Anbar for Pure Science 4, no. 1 (2010): 54–59. http://dx.doi.org/10.37652/juaps.2010.43887.

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Lv, Bin, Ligang Ma, Yun Li, Bo Yan, Pinggen Cai, and Xiaoshan Wu. "The phase segregation in CdTe/CdS heterojunction and its effect on photo current of CdTe thin films solar cell." Solar Energy 136 (October 2016): 460–69. http://dx.doi.org/10.1016/j.solener.2016.07.030.

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Vatavu, Sergiu, Hehong Zhao, Iuliana Caraman, Petru Gaşin, and Chris Ferekides. "The copper influence on the PL spectra of CdTe thin film as a component of the CdS/CdTe heterojunction." Thin Solid Films 517, no. 7 (2009): 2195–201. http://dx.doi.org/10.1016/j.tsf.2008.10.087.

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Dhanda, Harleen Kaur, Manjit Kaur, and Gurmohan Singh. "Conversion Efficiency Optimization of CdTe-CdS Heterojunction Based Solar Cell for Different Substrate Materials." Journal of Nanoelectronics and Optoelectronics 12, no. 3 (2017): 247–53. http://dx.doi.org/10.1166/jno.2017.2014.

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