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Journal articles on the topic 'CdxZn1-xTe'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Jin, Shuo, Li Li Wu, Wen Wu Wang, et al. "Study of Cd_xZn_1-xTe Thin Films with Cu Layers." Applied Mechanics and Materials 329 (June 2013): 114–17. http://dx.doi.org/10.4028/www.scientific.net/amm.329.114.

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CdxZn1-xTe is a promising material for tandem solar cells with a continuously adjustable band gap from 1.45eV to 2.26eV, but p-type CdxZn1-xTe with higher carrier density is rarely reported. CdxZn1-xTe thin films with Cu layers were deposited by vacuum co-evaporation in sequence and annealed in low vacuum in this paper. The compositional, structural, morphological, electrical and optical properties were studied. The results show that zinc-blended Cd0.4Zn0.6Te films with (111) preferred orientation were fabricated. Conduction type of annealed CdxZn1-xTe films with Cu layers will change from int

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2

LI, JUNWEI, YANG JIANG, YUGANG ZHANG, DI WU, ANQI LUO, and ZHONGPING ZHANG. "AQUEOUS SYNTHESIS OF HIGH QUANTUM YIELD AND MONODISPERSED THIOL-CAPPED CdxZn1-xTe QUANTUM DOTS BASED ON ELECTROCHEMICAL METHOD." Nano 07, no. 02 (2012): 1250011. http://dx.doi.org/10.1142/s1793292012500117.

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A facile green approach has been developed to control the growth regime in the aqueous synthesis of CdxZn1-xTe semiconductor quantum dots (QDs) based on the electrochemistry method. The Low growth temperature and slow injection of Te precursor are used to prolong the diffusion controlled stage and thus suppress Ostwald ripening during the nanocrystal growth. The experimental results showed that a low concentration of Te precursor will definitely influence the growth procedure. The UV–visible absorption spectra, as well as transmission electron microscopy (TEM) shows the QDs a good monodispersi

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3

Wang, K. F., S. P. Fu, Y. F. Chen, J. L. Shen, and W. C. Chou. "Dielectric properties of CdxZn1−xTe epilayers." Journal of Applied Physics 94, no. 5 (2003): 3371–75. http://dx.doi.org/10.1063/1.1597973.

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4

Davami, Keivan, Judith Pohl, Mehrdad Shaygan, et al. "Bandgap engineering of CdxZn1−xTe nanowires." Nanoscale 5, no. 3 (2013): 932. http://dx.doi.org/10.1039/c2nr33284a.

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5

Murali, K. R., and P. R. Rajkumar. "Characteristics of Pulse Deposited CdxZn1-xTe Films." ECS Transactions 13, no. 10 (2019): 105–10. http://dx.doi.org/10.1149/1.3005189.

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6

Murali, K. R. "Properties of brush plated CdxZn1−xTe thin films." Solar Energy 82, no. 3 (2008): 220–25. http://dx.doi.org/10.1016/j.solener.2007.07.007.

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7

Sokolov, Igor A., Mikhail A. Bryushinin, Vladimir V. Kulikov, et al. "Characterization of CdTe, CdxZn1−xTe and GaAs detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 610, no. 1 (2009): 298–301. http://dx.doi.org/10.1016/j.nima.2009.05.098.

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8

Lee, H. S., H. L. Park, and T. W. Kim. "Dimensional structural transition in CdTe∕CdxZn1−xTe nanostructures." Applied Physics Letters 85, no. 23 (2004): 5598–600. http://dx.doi.org/10.1063/1.1832749.

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9

Lee, H. Y., T. W. Kang, and T. W. Kim. "Temperature dependence of the optical properties in p-Cd0.96Zn0.04Te single crystals." Journal of Materials Research 16, no. 8 (2001): 2196–99. http://dx.doi.org/10.1557/jmr.2001.0301.

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Photoluminescence (PL) measurements were performed on p-Cd0.96Zn0.04Te single crystals to investigate the dependence of the excitons on temperature. The activation energies and the longitudinal acoustic parameters of the excitons were determined from the temperature dependence of the PL spectra and were in reasonable agreement with the theoretical calculations. These results can help improve understanding for the application of p-CdxZn1–xTe single crystals in optoelectronic devices.

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10

Moger, Sahana Nagappa, and MG Mahesha. "Investigation on ZnTe/CdxZn1-xTe heterostructure for photodetector applications." Sensors and Actuators A: Physical 315 (November 2020): 112294. http://dx.doi.org/10.1016/j.sna.2020.112294.

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11

Stanley, R. P., J. F. Donegan, J. Hegarty, R. D. Feldman, and R. F. Austin. "Dynamics of excitons in CdxZn1−xTe⧸ZnTe quantum wells." Journal of Luminescence 52, no. 1-4 (1992): 109–22. http://dx.doi.org/10.1016/0022-2313(92)90237-4.

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12

Lund, J. C., J. M. VanScyoc, R. B. James, D. S. McGregor, and R. W. Olsen. "Large volume room temperature gamma-ray spectrometers from CdxZn1−xTe." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 380, no. 1-2 (1996): 256–61. http://dx.doi.org/10.1016/s0168-9002(96)00323-3.

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13

Olsen, R. W., R. B. James, C. Cofield, B. Miller, and B. Mickelsen. "Special nuclear materials monitoring An application of CdxZn1−xTe detectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 380, no. 1-2 (1996): 467–69. http://dx.doi.org/10.1016/s0168-9002(96)00362-2.

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14

Lee, H. S., H. L. Park, and T. W. Kim. "Dimensional transition of CdxZn1−xTe nanostructures grown on ZnTe layers." Applied Physics Letters 90, no. 18 (2007): 181909. http://dx.doi.org/10.1063/1.2734479.

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15

Stanley, R. P., J. Hegarty, R. D. Feldman, and R. F. Austin. "Exciton line broadening in CdxZn1−xTe/ZnTe multiple quantum wells." Applied Physics Letters 53, no. 15 (1988): 1417–19. http://dx.doi.org/10.1063/1.99959.

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16

Shih, Y. T., W. C. Fan, C. S. Yang, M. C. Kuo, and W. C. Chou. "Optical properties of CdxZn1−xTe epilayers grown by molecular-beam epitaxy." Journal of Applied Physics 94, no. 6 (2003): 3791–95. http://dx.doi.org/10.1063/1.1601685.

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17

Stanley, R. P., J. Hegarty, R. Fischer, et al. "Dynamics of free exciton luminescence in CdxZn1-xTe/ZnTe quantum wells." Journal of Crystal Growth 101, no. 1-4 (1990): 683–86. http://dx.doi.org/10.1016/0022-0248(90)91058-x.

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18

Korozlu, N., K. Colakoglu, and E. Deligoz. "Structural, electronic, elastic and optical properties of CdxZn1−xTe mixed crystals." Journal of Physics: Condensed Matter 21, no. 17 (2009): 175406. http://dx.doi.org/10.1088/0953-8984/21/17/175406.

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19

Lee, H. S., J. Y. Lee, T. W. Kim, and H. L. Park. "Long-range order in CdxZn1−xTe epilayers grown on GaAs substrates." Journal of Crystal Growth 233, no. 4 (2001): 749–54. http://dx.doi.org/10.1016/s0022-0248(01)01612-8.

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20

Gurgula, G. Ya, T. P. Vintonyak, and O. V. Yaremiychuk. "Crystal-Chemistry of Point Defects and Mechanisms Formation of Solid Solutions CdxZn1-xTe." Фізика і хімія твердого тіла 16, no. 4 (2015): 706–10. http://dx.doi.org/10.15330/pcss.16.4.706-710.

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A Crystal-formulas defined dominant point defects in solid solutions CdxZn1-x Te for n-and p-type conductivity output binary compounds ZnS and ZnTe. Dependence of the concentration of defects, free carriers and Hall concentration on the composition of the solid solutions.

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21

Vaya, P. R., and R. Srinivasan. "Simulation study of strained layer CdxZn1−xTe–ZnTe quantum well laser structures." Materials Science and Engineering: B 57, no. 1 (1998): 71–75. http://dx.doi.org/10.1016/s0921-5107(98)00262-1.

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22

Moger, Sahana Nagappa, Deepika U. Shanubhogue, Rashmitha Keshav, and M. G. Mahesha. "Spectroscopic and electrical analysis of vacuum co-evaporated CdxZn1-xTe thin films." Superlattices and Microstructures 142 (June 2020): 106521. http://dx.doi.org/10.1016/j.spmi.2020.106521.

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23

de Melo, O., A. Domínguez, K. Gutiérrez Z-B, et al. "Graded composition CdxZn1−xTe films grown by Isothermal Close Space Sublimation technique." Solar Energy Materials and Solar Cells 138 (July 2015): 17–21. http://dx.doi.org/10.1016/j.solmat.2015.02.025.

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24

You, J. H., J. T. Woo, T. W. Kim, K. H. Yoo, H. S. Lee, and H. L. Park. "Interband transition energies and carrier distributions of CdxZn1−xTe/ZnTe quantum wires." Journal of Applied Physics 105, no. 6 (2009): 063522. http://dx.doi.org/10.1063/1.3087785.

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25

Doran, J. P., R. P. Stanley, J. Hegarty, R. D. Feldman, and R. F. Austin. "Polarization dependent dephasing measurements in CdxZn1−xTe/ZnTe multiple quantum well structures." Journal of Crystal Growth 138, no. 1-4 (1994): 826–30. http://dx.doi.org/10.1016/0022-0248(94)90915-6.

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26

Dhere, Ramesh, Tim Gessert, Jie Zhou, Joel Pankow, Sally Asher, and Helio Moutinho. "Development of CdxZn1−xTe alloy thin films for tandem solar cell applications." physica status solidi (b) 241, no. 3 (2004): 771–74. http://dx.doi.org/10.1002/pssb.200304193.

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27

Kang, Hyun Shik, Hae Ik Lee, and Tae Whan Kim. "Optical Properties of Terahertz Wave Emitter Fabricated by Using CdxZn1-xTe Single Crystals." Japanese Journal of Applied Physics 43, No. 10A (2004): L1256—L1257. http://dx.doi.org/10.1143/jjap.43.l1256.

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28

Park, K. D., S. Y. Yim, and H. S. Lee. "Dimensional transition and carrier dynamics in CdxZn1−xTe/ZnTe nanostructures on Si substrates." Applied Physics Letters 100, no. 17 (2012): 171905. http://dx.doi.org/10.1063/1.4705413.

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29

Larramendi, E. M., O. de Melo, and I. Hernández-Calderón. "Cd desorption induced by Zn exposure during atomic layer epitaxy of CdxZn1-xTe." physica status solidi (b) 242, no. 9 (2005): 1946–50. http://dx.doi.org/10.1002/pssb.200461730.

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30

You, J. H., J. H. Jung, J. T. Woo, et al. "Strain Distributions of Self-Assembled CdxZn1-xTe Quantum Wires Grown on ZnTe Buffer Layers." Journal of the Korean Physical Society 52, no. 9(4) (2008): 1202–5. http://dx.doi.org/10.3938/jkps.52.1202.

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31

Kim, T. W., D. S. Kim, and H. L. Park. "Excitonic transition and electronic subband studies in CdxZn1−xTe/ZnTe asymmetric step quantum wells." Journal of Applied Physics 82, no. 3 (1997): 1494–96. http://dx.doi.org/10.1063/1.365932.

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32

Kim, T. W., K. H. Lee, and H. L. Park. "Interband transition studies on CdxZn1−xTe/ZnTe step quantum wells under applied electric fields." Applied Physics Letters 72, no. 5 (1998): 563–65. http://dx.doi.org/10.1063/1.120760.

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33

Lee, H. S., J. Y. Lee, T. W. Kim, K. D. Kwack, J. G. Park, and H. L. Park. "Crystal structures of two variants for CuPtB-type ordering in strained CdxZn1−xTe epilayers." Solid State Communications 127, no. 1 (2003): 39–41. http://dx.doi.org/10.1016/s0038-1098(03)00345-4.

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34

Zhang, Z. Z., D. Z. Shen, C. X. Shan, et al. "The growth of the CdxZn1−xTe epilayers by low-pressure metalorganic vapor-phase epitaxy." Thin Solid Films 429, no. 1-2 (2003): 211–15. http://dx.doi.org/10.1016/s0040-6090(03)00145-7.

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35

Grigoryev, D. V., K. A. Lozovoy, and A. A. Pishchagin. "Analysis of efficiency of solar energy conversion by tandem CdxZn1-xTe/Si solar cell." Journal of Physics: Conference Series 541 (October 27, 2014): 012048. http://dx.doi.org/10.1088/1742-6596/541/1/012048.

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36

Haas, H., N. Magnea, and Le Si Dang. "Quantum-confined Stark effect on spatially indirect excitons in CdTe/CdxZn1−xTe quantum wells." Physical Review B 55, no. 3 (1997): 1563–67. http://dx.doi.org/10.1103/physrevb.55.1563.

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37

Kim, T. W., K. H. Lee, and H. L. Park. "Enhancement of the interband Stark effects in strained CdxZn1−xTe/ZnTe coupled double quantum wells." Applied Physics Letters 73, no. 11 (1998): 1550–52. http://dx.doi.org/10.1063/1.122202.

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38

Han, W. I., J. H. Lee, J. S. Yu, J. C. Choi, and H. S. Lee. "Carrier dynamics and activation energy of CdTe quantum dots in a CdxZn1−xTe quantum well." Applied Physics Letters 99, no. 23 (2011): 231908. http://dx.doi.org/10.1063/1.3669412.

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39

Soundararajan, Raji, and Kelvin G. Lynn. "Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe." Journal of Applied Physics 112, no. 7 (2012): 073111. http://dx.doi.org/10.1063/1.4757595.

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40

Kim, T. W., H. S. Lee, and H. L. Park. "Formation and activation energy of CdxZn1−xTe nanostructures with different dimensions grown on ZnTe buffer layers." Applied Physics Letters 88, no. 4 (2006): 043111. http://dx.doi.org/10.1063/1.2168244.

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41

Saib, S., S. Benyettou, and N. Bouarissa. "Ab initio calculation of fundamental properties of CdxZn1−xTe ternary alloys in the zinc-blende structure." Physica E: Low-dimensional Systems and Nanostructures 68 (April 2015): 184–89. http://dx.doi.org/10.1016/j.physe.2014.12.014.

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42

Lee, H. S., S. Yi, T. W. Kim, et al. "Existence of a Cu3Au-type ordered structure in CdxZn1−xTe epilayers grown on (100) GaAs substrates." Solid State Communications 137, no. 1-2 (2006): 70–73. http://dx.doi.org/10.1016/j.ssc.2005.10.007.

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43

Kim, T. W., J. H. Kim, H. L. Park, and J. Y. Lee. "Structural property and interband transition studies on CdxZn1−xTe/ZnTe coupled step and rectangular quantum wells." Journal of Crystal Growth 197, no. 4 (1999): 799–804. http://dx.doi.org/10.1016/s0022-0248(98)00776-3.

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44

Kang, H. S., H. I. Lee, and T. W. Kim. "Electrical and optical properties of CdxZn1−xTe single crystals for applications as terahertz electro-optic sensors." Journal of Applied Physics 96, no. 3 (2004): 1409–12. http://dx.doi.org/10.1063/1.1765870.

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45

Kim, T. W., K. D. Kwack, J. G. Park, et al. "Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1−xTe epilayers." Applied Physics Letters 83, no. 2 (2003): 269–71. http://dx.doi.org/10.1063/1.1592622.

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46

Lee, H. S., J. Y. Lee, T. W. Kim, and H. L. Park. "Domain of CuPtB-type and CuAu–I-type ordered structures in highly strained CdxZn1−xTe/ZnTe heterostructures." Applied Physics Letters 83, no. 5 (2003): 896–98. http://dx.doi.org/10.1063/1.1599966.

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47

Oh, S. H., M. S. Jang, H. L. Park, D. U. Lee, D. C. Choo, and T. W. Kim. "Dependence of the structural and optical properties on the Cd mol fraction in CdxZn1−xTe/GaAs heterostructures." Materials Research Bulletin 36, no. 10 (2001): 1881–87. http://dx.doi.org/10.1016/s0025-5408(01)00668-7.

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48

Kozlovsky, V. I., Yu G. Sadofyev, and V. G. Litvinov. "Deep-level transient spectroscopy and cathodoluminescence of CdxZn1−xTe/ZnTe QW structures grown on GaAs(100) by MBE." Journal of Crystal Growth 214-215 (June 2000): 983–87. http://dx.doi.org/10.1016/s0022-0248(00)00227-x.

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49

You, J. H., J. T. Woo, T. W. Kim, K. H. Yoo, H. S. Lee, and H. L. Park. "Strain distributions and interband transitions of CdxZn1−xTe/ZnTe asymmetric double quantum dots with different degree of coupling." Journal of Applied Physics 106, no. 11 (2009): 113530. http://dx.doi.org/10.1063/1.3267161.

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50

Lee, H. S., H. S. Sohn, J. Y. Lee, et al. "Coexistence of a phase separation and an ordered structure in CdxZn1−xTe epilayers grown on GaAs(001) substrates." Journal of Applied Physics 99, no. 9 (2006): 093512. http://dx.doi.org/10.1063/1.2195020.

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