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Journal articles on the topic 'Centers of induced charges'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Sercel, Peter C., Andrew Shabaev, and Alexander L. Efros. "Symmetry Breaking Induced Activation of Nanocrystal Optical Transitions." MRS Advances 3, no. 14 (2018): 711–16. http://dx.doi.org/10.1557/adv.2018.19.

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ABSTRACTWe have analysed the effect of symmetry breaking on the optical properties of semiconductor nanocrystals due to doping by charged impurities. Using doped CdSe nanocrystals as an example, we show the effects of a Coulomb center on the exciton fine-structure and optical selection rules using symmetry theory and then quantify the effect of symmetry breaking on the exciton fine structure, modelling the charged center using a multipole expansion. The model shows that the presence of a Coulomb center breaks the nanocrystal symmetry and affects its optical properties through mixing and shifti

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2

Колбнева, Н.Ю., С.О. Ширяева та Ю.Б. Кузьмичев. "О величине индуцированных зарядов и электростатического диполя вытянутого проводящего сфероида, расположенного коллинеарно однородному электростатическому полю". Elektronnaya Obrabotka Materialov 53, № 1 (2017): 9–15. https://doi.org/10.5281/zenodo.1048818.

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Аналитическим путем в сферической системе координат переходом от сфероидальных координат в линейном приближении по квадрату эксцентриситета найдены величина и положения центров индуцированных зарядов и величина поляризационного диполя. By analytical way, in a spherical system of coordinates, transition from spheroidal coordinates in a linear approach on a square of eccentricity sizes and provisions of the centers of the induced charges and dipole size were found

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3

Kokorin, Alexander I., Tatyana V. Sviridova, Elizaveta A. Konstantinova, Dmitry V. Sviridov, and Detlef W. Bahnemann. "Dynamics of Photogenerated Charge Carriers in TiO2/MoO3, TiO2/WO3 and TiO2/V2O5 Photocatalysts with Mosaic Structure." Catalysts 10, no. 9 (2020): 1022. http://dx.doi.org/10.3390/catal10091022.

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Titania is a widely used photocatalytic material possessing such advantages as low cost and high reactivity under the ultraviolet light illumination. However, the fast recombination of photoexcited charge carriers limits its application. Herein, we have synthesized original nanomaterials with mosaic structures that exhibited well-defined heterojunctions and new properties. Using SEM, XRD, EPR spectroscopy, photocatalytic measurements, and photoinduced pathphysiological activity of these photocatalysts, we studied the processes of charge carrier accumulation in TiO2/MoO3, TiO2/WO3, and TiO2/V2O

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4

Li, C. X., Q. Y. Zhang, N. Zhou, et al. "UV-induced charge-state conversion from the negatively to neutrally charged nitrogen-vacancy centers in diamond." Journal of Applied Physics 132, no. 21 (2022): 215102. http://dx.doi.org/10.1063/5.0125286.

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Under ultraviolet (UV) excitation with photon energy larger than 4.5 eV, a charge-state conversion from negatively to neutrally charged nitrogen-vacancy (NV− to NV0) centers in diamond samples is realized. The UV-induced charge-state conversion is found to strongly depend on the N concentration in the sample and the irradiation fluence of the electron beam. For the samples with high N concentrations, low-fluence (2.5 × 1017 cm−2) 10-MeV electron beam irradiation usually leads to UV-induced charge-state conversion efficiency higher than that of the samples irradiated with high fluences (≥2.5 ×

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5

Yang, Jun, Avralt-Od Purevjav, and Shanjun Li. "The Marginal Cost of Traffic Congestion and Road Pricing: Evidence from a Natural Experiment in Beijing." American Economic Journal: Economic Policy 12, no. 1 (2020): 418–53. http://dx.doi.org/10.1257/pol.20170195.

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Severe traffic congestion is ubiquitous in large urban centers. This paper provides the first causal estimate of the relationship between traffic density and speed and optimal congestion charges using real-time fine-scale traffic data in Beijing. The identification relies on plausibly exogenous variation in traffic density induced by Beijing’s driving restriction policy. Optimal congestion charges range from 5 to 39 cents per km depending on time and location. Road pricing would increase traffic speed by 11 percent within the city center and lead to an annual welfare gain of ¥1.5 billion from

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6

Kabacińska, Zuzanna, Danuta Michalska, and Bernadeta Dobosz. "Radiation Defects in Lime Mortars and Plasters Studied by EPR Spectroscopy." Radiocarbon 62, no. 3 (2020): 713–24. http://dx.doi.org/10.1017/rdc.2020.48.

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ABSTRACTElectron paramagnetic resonance (EPR) spectroscopy is a well-established method of dating based on trapped charges, applied to various crystalline materials, including carbonates, bones, and teeth. It provides a detailed insight into the structure of radiation defects—paramagnetic centers generated by irradiation, without the need of a painstaking sample preparation, often challenging in other methods. Using EPR we studied the effect of γ radiation on lime mortars and plasters from ancient settlement Hippos in Israel, in order to analyze the process of defect generation. Analysis of th

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7

Kolbneva, N. Yu. "On the Calculation of the Magnitude of Induced Charges and the Electrostatic Dipole of an Oblate Spheroid with an Axis of Symmetry Collinear to an External Homogeneous Electrostatic Field." Elektronnaya Obrabotka Materialov 59, no. 4 (2023): 25–32. http://dx.doi.org/10.52577/eom.2023.59.25.

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The values of the surface induced charges, the positions of their centers and the value of the equivalent dipole of an oblate conducting spheroid are determined by transition from spheroidal coordinates to a spherical system of coordinates in the analytical asymptotic calculations of the first order of smallness with respect to the squared eccentricity. The characteristics of the equivalent dipole are obtained depending on the value of the electrostatic field strength, squared eccentricity, and the radius of an equal sphere.

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8

Kossut, J., Z. Wilamowski, T. Dietl, and K. Świątek. "Spatial Correlation of Impurity Charges Induced by Coulomb Interactions - Application to DX Centers in GaAs." Acta Physica Polonica A 79, no. 1 (1991): 49–58. http://dx.doi.org/10.12693/aphyspola.79.49.

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9

JIANG, JIANN-SHENG, and CHI-KUN LIN. "GUIDING CENTER DRIFT INDUCED BY HOMOGENIZATION." Mathematical Models and Methods in Applied Sciences 22, no. 05 (2012): 1150027. http://dx.doi.org/10.1142/s0218202511500278.

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The guiding center drift induced by the homogenization of the Lorentz forces is studied. It generates memory effects. The memory (or nonlocal) kernel is described by the Volterra integral equation. The memory kernel can be characterized explicitly in terms of a Radon measure. It describes the extra velocity drift. By way of velocity drift, we view the Gauss's law with polarization charges.

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10

Dunn, P. E., and S. H. Carr. "A Historical Perspective on the Occurrence of Piezoelectricity in Materials." MRS Bulletin 14, no. 2 (1989): 22–31. http://dx.doi.org/10.1557/s0883769400063405.

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This article provides an overview of the piezoelectric effect in all the classes of materials in which it is found to occur. This includes select materials from the categories of naturally occurring single crystals, polycrystalline ceramics, and semicrystalline polymers. Throughout this development, an attempt is made to point out the common factor for the piezoelectric effect in all these materials, namely, the presence of dipolar moieties, whose orientation brings about a net polarization in the material as a whole.The applications of each of these classes of materials are covered briefly. E

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11

Chiu, Fu-Chien. "Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide." Advances in Materials Science and Engineering 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/950439.

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The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inheren

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12

Stevens Kalceff, Marion A. "Irradiation Induced Effects in the Environmental Scanning Electron Microscope." Microscopy and Microanalysis 5, S2 (1999): 276–77. http://dx.doi.org/10.1017/s1431927600014707.

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When a poorly conducting specimen is irradiated with an electron beam in a variable pressure electron microscope, the excess charge on the surface of the specimen can be neutralized by incident gas ions to prevent deflection and retarding of the electron beam. A small fraction (<10∼6) of the incident electrons are trapped at irradiation induced or pre-existing defects within the irradiated micro-volume of specimen. The trapped charge induces an electric field, which may result in the electro-migration and micro-segregation of charged mobile defect species within the irradiated volume of spe

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13

Abu Bakar, Muhammad Hafiz bin, Aboulaye Traore, Guo Junjie, et al. "Optically detected magnetic resonance of nitrogen-vacancy centers in vertical diamond Schottky diodes." Japanese Journal of Applied Physics 61, SC (2022): SC1061. http://dx.doi.org/10.35848/1347-4065/ac4659.

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Abstract Diamond solid-state devices are very attractive to electrically control the charge state of nitrogen-vacancy (NV) centers. In this work, p-type vertical diamond Schottky diodes (VDSDs) are introduced as a platform to electrically control the interconversion between the neutral charge NV (NV0) and negatively charged NV (NV−) centers. The photoluminescence of NV centers generated by ion implantation in VDSDs shows an increase in NV− zero phonon line (ZPL) and phonon sideband intensities with reverse voltage, whereas the NV0 ZPL intensity decreases. Thus, NV centers embedded in VDSDs are

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14

Marks, Roman. "Bubble mediated polymerization of RNA and DNA." AIMS Biophysics 9, no. 2 (2022): 96–107. http://dx.doi.org/10.3934/biophy.2022009.

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<abstract> <p>Research dedicated to trace rotational motion of bubbles in saline water revealed that these may generate either single cationic or cationic/anionic motions, including spliced double helix flow. In all cases, the aggregated ionic flows propagate in spiraling as well as rotational manner. However, if bi-ionic or double helix motion is generated, the flow is oppositely directed and has opposite electric charges. Next, the assembled flow is forced to pirouette within the bubble vortex. During that processing the narrowing of spiraling flow takes place and result in incre

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15

Sciuto, Antonella, Lucia Calcagno, Salvatore Di Franco, Domenico Pellegrino, Lorenzo Maurizio Selgi, and Giuseppe D’Arrigo. "Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector." Materials 15, no. 1 (2021): 264. http://dx.doi.org/10.3390/ma15010264.

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4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He+ in the fluence range of 5 × 1011 ÷ 5 × 1014 ion/cm2 in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were monitored in dark condition and in the UV (200 ÷ 400 nm) range, as well as in the visible region confirming the typical visible blindness of unirradiated and irradiated SiC photo-sensors. A decrease of UV optical responsivity occurred after irradiation and two fluence regimes were identified. At low fluence (<1013 ions/cm2), a considerable reductio

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16

Kryukov, N., and E. Oks. "Electric field induced crossings of energy terms of a Rydberg quasi molecule enhancing charge exchange and ionization." Canadian Journal of Physics 90, no. 7 (2012): 647–54. http://dx.doi.org/10.1139/p2012-059.

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Charge exchange is one of the most important atomic processes in plasmas. Charge exchange and crossings of corresponding energy levels that enhance charge exchange are strongly connected with problems of energy losses and of diagnostics in high temperature plasmas. Charge exchange was also proposed as an effective mechanism for population inversion in the soft X-ray and vacuum ultraviolet ranges. One of the most fundamental theoretical domains for studying charge exchange is the problem of electron terms in the field of two stationary Coulomb centers (TCC) of charges Z and Z′ separated by a di

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17

Guo, Xueyi, Sheng Liu, Weijia Wang, et al. "Plasmon-induced ultrafast charge transfer in single-particulate Cu1.94S–ZnS nanoheterostructures." Nanoscale Advances 3, no. 12 (2021): 3481–90. http://dx.doi.org/10.1039/d1na00037c.

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Recombination centers generated from structural and interfacial defects in nanoheterostructures (NHs) prevent effective photo-induced charge transfer and have blocked the advance of many photoresponsive applications.

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18

Narahara, Takuma, Shin Ichiro Sato, Kazutoshi Kojima, Yuichi Yamazaki, Yasuto Hijikata, and Takeshi Ohshima. "Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC." Materials Science Forum 1004 (July 2020): 349–54. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.349.

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Spin defects of which states can be manipulated in Silicon Carbide (SiC) have drawn considerable attention because of their applications to quantum technologies. The single negatively-charged pairs of VSi and nitrogen atom (N) on an adjacent C site (NCVSi- center) in SiC is suitable for them. This paper reports the formation of NCVSi- centers on 4H-SiC epilayers with different nitrogen concentrations using light/heavy ion irradiation and subsequent thermal annealing. The formation of NCVSi- centers is characterized by the near infrared photoluminescence (PL) spectroscopy. It is shown that the

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19

Gao, Xiaoping, and Sinclair S. Yee. "Hole capture cross section and emission coefficient of defect centers related to high-field-induced positive charges in SiO2 layers." Solid-State Electronics 39, no. 3 (1996): 399–403. http://dx.doi.org/10.1016/0038-1101(95)00128-x.

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20

Ohmagari, Hitomi, Ryo Ohtani, Manabu Nakaya, et al. "Water-dependent charge-transfer-induced spin transition of Prussian blue analogues." Dalton Transactions 45, no. 42 (2016): 16784–88. http://dx.doi.org/10.1039/c6dt03474h.

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Na<sub>0.46</sub>Co[Fe(CN)<sub>6</sub>]<sub>0.78</sub>(H<sub>2</sub>O)<sub>1.31</sub> shows a water-dependent charge-transfer-induced spin transition behavior caused by a change in coordination geometry at Co centers.

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21

Gogina, O. A., Yu V. Petrov, O. F. Vyvenko, S. Kovalchuk, and K. Bolotin. "Ultraviolet Cathodoluminescence of Ion-Induced Defects in Hexagonal Boron Nitride." JETP Letters 121, no. 1 (2025): 1–7. https://doi.org/10.1134/s0021364024603531.

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Hexagonal boron nitride is distinguished among solid-state materials with luminescent properties as a material to create single-photon sources efficiently emitting at room temperature. In this work, it is demonstrated that helium ion irradiation with fluences of (1–5) × 1014 ion/cm2 increases the ultraviolet radiation intensity with a maximum at a wavelength of 320 nm due to the formation of new luminescent centers. The subsequent electron irradiation further increases the intensity of 320 nm luminescence apparently due to the formation of carbon-containing defects in the volume of hBN through

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22

Grigoriev, A., S. Shiryaeva, and N. Kolbneva. "Nonlinear Correction to Intensity of Dipole Radiation of Uncharged Drop Oscillating in External Electrostatic Field." Elektronnaya Obrabotka Materialov 57, no. 3 (2021): 50–61. http://dx.doi.org/10.52577/eom.2021.57.3.50.

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An asymptotic calculation of a dipole electromagnetic radiation of an uncharged conductive drop oscillating with a finite amplitude in an external electrostatic field to within the second order of smallness inclusive on the relation of the amplitude of oscillations to the radius of an initial drop is carried out. It is shown that the first mode of oscillations is excited in the calculation of the second order of smallness. As a result, the centers of the induced charges with different signs will synchronously oscillate, and the drop will radiate electromagnetic waves of dipolar type, forming t

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23

Savchenko, Elena V., Alexander N. Ogurtsov, Oleg N. Grigorashchenko, et al. "Radiation-induced formation of stable charge centers in rare-gas solids." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 166-167 (May 2000): 47–50. http://dx.doi.org/10.1016/s0168-583x(99)00642-4.

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24

Lubitz, W., J. Rautter, H. Käß, and F. Lendzian. "Light-induced charge separation in photosynthetic reaction centers — Magnetic resonance studies." Solar Energy Materials and Solar Cells 38, no. 1-4 (1995): 77–89. http://dx.doi.org/10.1016/0927-0248(94)00217-7.

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25

Zhang, Xiaodong, and D. A. Drabold. "SIMULATION OF THE RESPONSE OF AMORPHOUS SELENIUM TO LIGHT." International Journal of Modern Physics B 15, no. 24n25 (2001): 3190–96. http://dx.doi.org/10.1142/s0217979201007476.

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We investigated the physical mechanism of dynamical bond formation, light-created defect centers and light induced electron spin resonance for Se chains and a realistic model of amorphous selenium by ab-inito molecular dynamic simulation. It is found that the Coloumb interaction between light-created charge centers plays the key role in the bond breaking, switching and reconstruction in Se chain and a-Se under the light irradiation.

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26

Buryi, M., V. Babin, Z. Remeš, and J. Mičová. "X-ray assisted point defects creation in micron-size Zn, Mo oxide particles at liquid nitrogen temperature." Journal of Physics: Conference Series 2712, no. 1 (2024): 012005. http://dx.doi.org/10.1088/1742-6596/2712/1/012005.

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Abstract Charge trapping processes induced by the X-ray irradiation in the heavy Mo doped ZnO and MoO3 micropowders synthesized by the hydrothermal growth method were investigated in detail. Electron paramagnetic resonance (EPR) and thermally stimulated luminescence (TSL) were applied in a correlated manner to discover the role of the Mo doping in the charge trapping processes in ZnO. Thermally unstable oxygen- and molybdenum-related charge trapping centers were studied. Molybdenum and oxygen created electron-hole trapping pairs in some cases were observed. Some part of the hole trapping cente

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27

Nunn, Nicholas, Sergey Milikisiyants, Evgeny O. Danilov, et al. "Electron irradiation-induced paramagnetic and fluorescent defects in type Ib high pressure–high temperature microcrystalline diamonds and their evolution upon annealing." Journal of Applied Physics 132, no. 7 (2022): 075106. http://dx.doi.org/10.1063/5.0103313.

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Defects introduced to synthetic type Ib diamond micrometer-size particles by electron-beam irradiation were studied by electron paramagnetic resonance and photoluminescence (PL) spectroscopy as a function of e-beam fluence and post-irradiation thermal annealing. Increasing electron-beam fluence causes a substantial reduction of the substitutional nitrogen (P1) content, accompanied by progressively higher concentrations of paramagnetic negatively charged vacancies (V−) and triplet interstitials (R1/R2). Annealing results in a drastic decrease in the V− and R1/R2 content and an increase in the n

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28

Ширяев, А. А., В. М. Воротынцев та Е. Л. Шоболов. "Эффект Пула--Френкеля и возможность его применения для прогнозирования радиационного накопления заряда в термическом диоксиде кремния". Физика и техника полупроводников 52, № 9 (2018): 990. http://dx.doi.org/10.21883/ftp.2018.09.46143.8762.

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AbstractIt is proposed that the Poole–Frenkel effect be applied to predict radiation-induced charge accumulation in thermal silicon dioxide. Various conduction mechanisms of thermal silicon dioxide are considered, the conditions of the appearance of the Poole–Frenkel effect in it are determined, and the characteristics of donor centers participating in Poole–Frenkel electrical conductivity are calculated. A donor center level at an energy of 2.34 eV below the conduction-band bottom is determined and the concentration of ionized donor centers of 1.0 × 10^9 cm^–3 at 400 K and a field strength of

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29

Islamov, A. Kh, E. M. Ibragimova, I. A. Khayitov, and R. R. Vildanov. "Charge Transfer between Neutron-Induced and Activator Centers in LuAG:Pr Single Crystal." Optics and Spectroscopy 130, no. 3 (2022): 180–87. http://dx.doi.org/10.1134/s0030400x22030079.

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Shamiyeva, Raushan. "Recombination emission in the phosphor CaSO4-Pb2+." BULLETIN OF THE L.N. GUMILYOV EURASIAN NATIONAL UNIVERSITY. PHYSICS. ASTRONOMY SERIES 149, no. 4 (2024): 199–215. https://doi.org/10.32523/2616-6836-2024-149-4-199-215.

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Optical methods were used to investigate the formation of combined or induced electronic emissive states in irradiated CaSO4-Pb2+ phosphor at 2.9 eV and 3.1 eV. The combined electronic emissive state consists of electronic states of impurity Pb+-SO4- and intrinsic SO43--SO4- trapping centers. The impurity electronic states are formed by capturing free electrons of conduction band by Pb2+ impurities and localizing electrons resulting from charge transfer from the excited anion complex SO42-(O2--Pb2+) impurities by reaction Pb2++(e-+SO4-)→Pb+-SO4-. The intrinsic electronic states are formed by c

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31

Козлов, Д. В., В. В. Румянцев та С. В. Морозов. "Спектр двойных акцепторов в слоях барьеров и квантовых ям гетероструктур HgTe/СdHgTe". Физика и техника полупроводников 53, № 9 (2019): 1224. http://dx.doi.org/10.21883/ftp.2019.09.48128.11.

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AbstractThe states of double acceptors in HgTe/СdHgTe heterostructures containing quantum wells are theoretically investigated taking into account the substantial difference in the values of the permittivities of the barrier and quantum-well layers. The effect of such a difference and the charge induced at the heterointerfaces arising from it are described with the image-charge potential. Calculation shows a significant change in the binding energy of the acceptor centers—mercury vacancies due to the induced charge; the ionization energies of mercury vacancies are in good agreement with the po

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Nurakhmetov, Turlybek N., Temirulan T. Alibay, Keleshek B. Zhangylyssov та ін. "Luminescence and Electron–Hole-Trapping Centers in α-Ca2P2O7-Mn". Crystals 14, № 5 (2024): 406. http://dx.doi.org/10.3390/cryst14050406.

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The mechanisms of formation of induced intrinsic and impurity radiative states, which consist of intrinsic and impurity electron–hole-trapping center states in irradiated Ca2P2O7-Mn and Ca2P2O7 phosphates, were investigated using thermoactivation and vacuum-ultraviolet spectroscopy methods. These centers are excited at photon energies of 4.0 eV and 4.5 eV, which are within the matrix’s transparency region. New radiative-induced states at 3.06 eV and 2.92 eV are demonstrated to be generated upon the excitation of anions by photons with energies of 5.0 and 5.64 eV. This process is due to charge

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Fugol’, I. Ya, Yu I. Rybalko, V. M. Zhuravlev, D. Kuzner та N. Schwentner. "Optical emission of YBa2Cu3O7–δ and copper samples irradiated by slow electrons under laser-induced evaporation". Soviet Journal of Low Temperature Physics 15, № 12 (1989): 719–24. https://doi.org/10.1063/10.0032312.

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A comparative analysis of emission spectra of laser-induced plasma and cathodoluminescence of YBa2Cu3O7–δ and copper samples is carried out. The identification of plasma luminescence reveals the presence of Y, Y+, Ba, Ba+, and Cu emission lines and continual emission of molecular and cluster fragments Cu–O with a peak at 2.7 eV. The bands of intrinsic electron–photon radiation emitted by copper irradiated by slow electrons are detected at 2.0 and 4.5 eV. It is shown that the main contribution to the wide-band luminescence of Y–Ba–Cu–O at 2.7 and 3.7 eV is made by radiative transitions at the d

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34

Zhang, Xue, Georgios Chatzidrosos, Yinan Hu, et al. "Battery Characterization via Eddy-Current Imaging with Nitrogen-Vacancy Centers in Diamond." Applied Sciences 11, no. 7 (2021): 3069. http://dx.doi.org/10.3390/app11073069.

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Sensitive and accurate diagnostic technologies with magnetic sensors are of great importance for identifying and localizing defects of rechargeable solid batteries using noninvasive detection. We demonstrate a microwave-free alternating current (AC) magnetometry method with negatively charged NV centers in diamond based on a cross-relaxation feature between nitrogen-vacancy (NV) centers and individual substitutional nitrogen (P1) centers occurring at 51.2 mT. We apply the technique to non-destructively image solid-state batteries. By detecting the eddy-current-induced magnetic field of the bat

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Azhniuk, Yu M., A. V. Gomonnai, V. V. Lopushansky, et al. "Optical Absorption Processes in CdSe Nanocrystals Embedded in Silicate Glass and Organic Polymer Matrices Under 7-MeV Electron Irradiation." Journal of Nanoscience and Nanotechnology 8, no. 2 (2008): 806–11. http://dx.doi.org/10.1166/jnn.2008.a113.

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Irradiation-induced bleaching occurs in the spectra of glass-embedded CdSe nanocrystals due to their ionization resulting from charge transfer between them and color centers formed in glass by electron irradiation. No bleaching in the spectra of CdSe nanocrystals encapsulated in gelatine is observed because no deep traps are formed in the matrix under electron irradiation.

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Murzakhanov, Fadis, Boris Yavkin, Georgiy Mamin, et al. "Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines." Nanomaterials 11, no. 6 (2021): 1373. http://dx.doi.org/10.3390/nano11061373.

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Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample in

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37

Chiba, Yoji, Yuichi Yamazaki, Shin Ichiro Sato, et al. "Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment." Materials Science Forum 1004 (July 2020): 337–42. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.337.

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We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (VSi-) in SiC by thermal treatment. To create high density VSi-, Proton Beam Writing (PBW) was conducted. After an annealing at 600 °C, ODMR contrast showed the highest value in the investigated temperature range. At a fewer irradiation fluence, despite no significant change was observed in terms of VSi- PL intensity, the improvement of the ODMR contrast was observed. Considering defect energy levels and annealing behavior previously reported, it was deduced that t

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Islamov A. Kh., Ibragimova E. M., Kudratov Kh. N., and Vildanov R. R. "Effect of gamma-induced defects on the activator glow in Lu-=SUB=-2-=/SUB=-SiO-=SUB=-5-=/SUB=- : Ce scintillator crystals." Physics of the Solid State 64, no. 11 (2022): 1690. http://dx.doi.org/10.21883/pss.2022.11.54192.357.

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Correlations were studied between the optical absorption (OA) spectra and the integral curves of thermal glow (TG) in 300-600 K after irradiation of Lu2SiO5 : Ce scintillation crystals with 60Co gamma-quanta (1.17 and 1.33 MeV) at the dose rate 1.1 Gy/s in the dose range 70-5·107 Gy at 310 K and their gamma-luminescence (GL). There are intrinsic defects caused by technological process, such as neutral VO5-centers with OA band at 193 nm and charged =Si-VO5 --- 213 nm, Lu1-F^+-Si --- 238 nm, Ce3+/Ce4+ --- 263 nm, and Ce3+/F --- 295 nm centers. Irradiation to the dose 5·104 Gy resulted in decreas

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Pagava, T. A., D. Z. Khocholava, N. I. Maisuradze, and L. S. Chkhartishvili. "Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons." Ukrainian Journal of Physics 57, no. 5 (2012): 525. http://dx.doi.org/10.15407/ujpe57.5.525.

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Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime of minority charge carriers τ, the specific resistance ρ, the hole concentration p, and the Hall mobility μH on the isochronous annealing temperature Tann, theannealing-induced features in the behavior of p and μH are revealed. We determined which radiation-induced defects are recombination centers

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Hideg, Éva, та Sándor Demeter. "Thermoluminescence and Delayed Luminescence Characterization of Photosystem IIα and Photosystem IIβ Reaction Centers". Zeitschrift für Naturforschung C 43, № 7-8 (1988): 596–600. http://dx.doi.org/10.1515/znc-1988-7-818.

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The thermoluminescence and delayed luminescence characteristics of PS IIα and PS IIβ centers were investigated in BBY particles and stroma thylakoids, respectively. The BBY particles exhibited a thermoluminescence band at 25 °C (B band) which was associated with the charge recombination of the S2Qв- redox couple and underwent period-2 oscillation in a sequence of flashes. In the flash-induced decay of delayed luminescence of BBY particles a component with a half-time of 34 s corresponded to the B thermoluminescence band and was also assigned to S2Oв- charge recombination. No corresponding ther

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Ogurtsov, Alexander N., Elena V. Savchenko, Marko Kirm, Barbara Steeg, and Georg Zimmerer. "VUV-radiation induced creation of intrinsic neutral and charged centers in rare gas crystals." Journal of Electron Spectroscopy and Related Phenomena 101-103 (June 1999): 479–83. http://dx.doi.org/10.1016/s0368-2048(98)00478-2.

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Li, Hongda, Wenjun Li, Shaonan Gu, Fangzhi Wang, and Hualei Zhou. "In-built Tb4+/Tb3+ redox centers in terbium-doped bismuth molybdate nanograss for enhanced photocatalytic activity." Catalysis Science & Technology 6, no. 10 (2016): 3510–19. http://dx.doi.org/10.1039/c5cy01730k.

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Zhang, Daobin, Congbin Fan, Chunhong Zheng, and Shouzhi Pu. "A new dithienylethene dimer with terminal tertiary amine redox centers: Electrochemical, UV–vis–NIR spectral and electronic transfer charges induced by a stepwise photochromic process." Dyes and Pigments 136 (January 2017): 669–77. http://dx.doi.org/10.1016/j.dyepig.2016.09.029.

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Ogrodnik, A., T. Langenbacher, G. Bieser, et al. "Electric field-induced decrease of quantum yield of charge separation in photosynthetic reaction centers." Chemical Physics Letters 198, no. 6 (1992): 653–58. http://dx.doi.org/10.1016/0009-2614(92)85044-b.

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Juraev, Bakhtinur, Zdeněk Stuchlík, Arman Tursunov, and Martin Kološ. "Radiating particles accelerated by a weakly charged Schwarzschild black hole." Journal of Cosmology and Astroparticle Physics 2024, no. 09 (2024): 035. http://dx.doi.org/10.1088/1475-7516/2024/09/035.

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Abstract It is well known that supermassive black holes in the centers of galaxies are capable of accelerating charged particles to very high energies. In many cases, the particle acceleration by black holes occurs electromagnetically through an electric field induced by the source. In such scenarios, the accelerated particles radiate electromagnetic waves, leading to the appearance of the backreaction force, which can considerably change the dynamics, especially, if the particles are relativistic. The effect of the radiation reaction force due to accelerating electric field of the central bod

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Olikh, Ya M. "PECULIARITIES OF ACOUSTIC INDUCED CHANGES OF ELECTROPHYSICAL CHARACTERISTICS IN GaN/Al0,2Ga0,8N/GaN/AlN HETEROSTRUCTURES." Optoelektronìka ta napìvprovìdnikova tehnìka 55 (December 31, 2020): 109–16. http://dx.doi.org/10.15407/iopt.2020.55.109.

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We studied temperature, amplitude and time dependencies of electrophysical parameters in GaN/Al0,2Ga0,8N/GaN/AlN structures when the ultrasound (US) was switched on/off (fUS = 9 MHz). We found out the charge carriers concentration n(Т) increases and the mobility μH(Т) decreases under the ultrasonic loading. With decreasing the temperature, the effect of acoustic induced changes increases. When US switches on/off, long-term (up to ~ 500 s) relaxation of the acoustic conductivity US(t) is observed, with increasing the amplitude of the ultrasound at low temperatures the acoustic conductivity incr

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Babunts, R. A., Yu A. Uspenskaya, A. P. Bundakova, G. V. Mamin, E. N. Mokhov, and P. G. Baranov. "Identifikatsiya opticheski aktivnykh kvartetnykh spinovykh tsentrov na osnove vakansii kremniya v SiC, perspektivnykh dlya kvantovykh tekhnologiy." Письма в Журнал экспериментальной и теоретической физики 118, no. 9-10 (11) (2023): 639–48. http://dx.doi.org/10.31857/s1234567823210036.

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Optically active (bright) and optically inactive (dark) quartet S = 3/2 spin color centers including a negatively charged Si vacancy have been identified in silicon carbide using high-frequency electron nuclear double resonance on the nuclei of the 13C isotope, enhanced by a tenfold increase in its content. The alignment of populations of spin levels is optically induced in a bright center promising for quantum technologies, whereas the populations of spin levels in a dark center, which is an isolated negatively charged Si vacancy V-Si, correspond to a Boltzmann distribution and do not change

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Mezzetti, Alberto, Jean-François Paul, and Winfried Leibl. "Identification of a Ubiquinone–Ubiquinol Quinhydrone Complex in Bacterial Photosynthetic Membranes and Isolated Reaction Centers by Time-Resolved Infrared Spectroscopy." International Journal of Molecular Sciences 24, no. 6 (2023): 5233. http://dx.doi.org/10.3390/ijms24065233.

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Ubiquinone redox chemistry is of fundamental importance in biochemistry, notably in bioenergetics. The bi-electronic reduction of ubiquinone to ubiquinol has been widely studied, including by Fourier transform infrared (FTIR) difference spectroscopy, in several systems. In this paper, we have recorded static and time-resolved FTIR difference spectra reflecting light-induced ubiquinone reduction to ubiquinol in bacterial photosynthetic membranes and in detergent-isolated photosynthetic bacterial reaction centers. We found compelling evidence that in both systems under strong light illumination—

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Woodman, Olivia, Abdolreza Pasharavesh, Christopher Wilson, and Michal Bajcsy. "Detecting Single Microwave Photons with NV Centers in Diamond." Materials 16, no. 8 (2023): 3274. http://dx.doi.org/10.3390/ma16083274.

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We propose a scheme for detecting single microwave photons using dipole-induced transparency (DIT) in an optical cavity resonantly coupled to a spin-selective transition of a negatively charged nitrogen-vacancy (NV−) defect in diamond crystal lattices. In this scheme, the microwave photons control the interaction of the optical cavity with the NV− center by addressing the spin state of the defect. The spin, in turn, is measured with high fidelity by counting the number of reflected photons when the cavity is probed by resonant laser light. To evaluate the performance of the proposed scheme, we

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Tang, Tao, Hong Chi, Tingting Lin, FuKe Wang, and Chaobin He. "Protonation induced shifting of electron-accepting centers in intramolecular charge transfer chromophores: a theoretical study." Phys. Chem. Chem. Phys. 16, no. 37 (2014): 20221–27. http://dx.doi.org/10.1039/c4cp02410a.

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