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Journal articles on the topic 'Channel doping concentration'

Author: Grafiati

Published: 2 June 2025

Last updated: 31 July 2025

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1

Albrecht, Matthaeus, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs." Materials Science Forum 858 (May 2016): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.821.

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In this work, the impact of the n-well doping concentration on the channel mobility and threshold voltage of p-MOSFETs and their applications in CMOS-devices is evaluated. For this purpose lateral p-channel MOSFETs with different channel lengths (L = 800 μm, 10 μm, 5 μm, and 3 μm) and doping concentrations (ND = 1015 cm-3 and 8·1015 cm-3) were fabricated and the respective field-effect mobility was extracted from the transfer-characteristics. Comparable to n-MOSFETs the mobility of p-MOSFETs was found to be the highest for the lowest doping concentration in the channel and the absolute value o

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2

N., M. Shehu G. Babaji M. H. Ali. "Exploring the Influence of Channel Doping Concentration on Short Channel Effects in Nanoscale Double-Gate FinFETs: A Comparative Study." Journal of Science and Technology Research 6, no. 1 (2024): 182–89. https://doi.org/10.5281/zenodo.10969362.

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<em>This work investigates the impact of channel doping concentration on short channel effects (SCEs) in different semiconductor materials using FinFETs. The work examines Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si) FinFETs in the PADRE simulator environment which is a powerful component from Multigate Field Effect Transistor (MUGFET) tool readily available at nanoHUB.org, analyzing performance metrics such as Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Threshold Voltage roll-off, transconductance as well as on-current. It is

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3

Kumar, Abneesh, Atal Kumar, R. K. Saxena, and Suresh Patel. "To Study Effect on Current Due to Channel Doping Concentrations Variation." International Journal of Advance Research and Innovation 2, no. 3 (2014): 37–40. http://dx.doi.org/10.51976/ijari.231407.

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The aim of this simulation work is to study effect of channel doping concentration. The channel lies under the oxide layer of the MOSFET. The results obtained show that as channel doping concentration decreases threshold voltage decreases and good saturation region in I-V curve is obtained and the drain current increases. So the lower channel doping concentration provides better mobility and hence, less velocity saturation.

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4

KUMARI, RITI, MANISH GOSWAMI, and B. R. SINGH. "THE IMPACT OF CHANNEL ENGINEERING ON SHORT CHANNEL BEHAVIOR OF NANO FIN-FETs." International Journal of Nanoscience 11, no. 02 (2012): 1250021. http://dx.doi.org/10.1142/s0219581x12500214.

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This short note presents the simulation result on the effect of channel engineering i.e., non-uniform channel doping on short channel effects (SCE) in nano Fin-FET devices using Silvaco TCAD tool. The nano Fin-FET structures were generated using DEVEDIT and the effect of channel doping concentration has been studied. The optimum doping concentration profile has been observed to considerably improve the SCE in general and drain induced barrier lowering (DIBL) in particular.

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5

K.Ullah, S.Riaz M.Habib F.Abbas S.Naseem I.Shah A.Bukhtiar. "Effect of Channel Doping Concentration on the Impact ionization of nChannel Fully Depleted SOI MOSFET." International Journal of Engineering Works 2, no. 2 (2015): 18–22. https://doi.org/10.5281/zenodo.15756.

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Impact ionization in fully depleted (FD) Silicon On Insulator (SOI) n-Channel MOSFET is investigated as a function of the doping concentration. We have found that impact ionization increases with the decrease in the doping concentration and vice versa. Simulation results obtained from Sentaurus TCAD with the higher doping concentration can control the threshold voltage (Vth). Furthermore we have examined the effect of doping concentration on the transconductance (gm) and have observed that transconductance is inversely proportional of the doping concentration.

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6

Sun, Hao, and PuiTo Lai. "Effect of Gate-Electrode/Gate-Dielectric Interlayer on Gate Screening of Remote Phonon Scattering in InGaZnO Thin-Film Transistor with High-k Gate Dielectric." ECS Meeting Abstracts MA2024-02, no. 34 (2024): 2384. https://doi.org/10.1149/ma2024-02342384mtgabs.

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InGaZnO thin-film transistors with various SiO2 thicknesses (0, 3.5, 8.5, 18.8 nm) in double-layered gate dielectric (NdHfO/SiO2) and different gate doping concentrations (2.4×1015, 1.5×1018, 2.1×1019 /cm3) are fabricated to systematically study the influence of the SiO2 low-k interlayer on the remote phonon scattering (RPS) in the conduction channel originated from the NdHfO high-k layer. The performances of the TFTs show critical dependence on the SiO2 thickness and the gate doping concentration. On the one hand, the channel-carrier mobility increases with the rise of gate doping concentrati

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7

Strenger, Christian, Viktoryia Uhnevionak, Vincent Mortet, et al. "Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs." Materials Science Forum 778-780 (February 2014): 583–86. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.583.

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In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from

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8

Wu, Chien-Hung, Po-Tsun Liu, Wen-Chun Chung, Kow-Ming Chang, Der-Hsien Lien, and Cheng Liu. "Effects of Mg Doping on Double Channel Layer Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition Fabricated Amorphous InGaZnO Thin Film Transistors." Journal of Nanoelectronics and Optoelectronics 16, no. 9 (2021): 1412–16. http://dx.doi.org/10.1166/jno.2021.3086.

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Amorphous IGZO (a-IGZO) has been proved to be a suitable material for the channel layer in a thin film transistor, showing high mobility even in low temperature fabrication, device electrical characteristic exceeds a-Si or other metal oxide semiconductor materials. In this work, bottom gate top TFT is fabricated. With Atmosphere Pressure-PECVD (AP-PECVD), a-IGZO is deposited as device channel layer. A double channel layer is tested with Mg doping added in the bottom layer. This work focus on how the Mg doping concentration in the bottom layer affects device electrical characteristic. The resul

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9

Hatakeyama, Tetsuo, Takatoshi Watanabe, Junji Senzaki, et al. "Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping." Materials Science Forum 483-485 (May 2005): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.829.

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This paper reports on the degradation of inversion channel mobility of SiC MOSFET caused by the increase of channel doping. SiC MOSFETs were fabricated on three wafers, the doping concentrations of the epitaxial layer of which were 16 10 2× cm-3 (sample A), 17 10 2× cm-3 (sample B) and 17 10 4× cm-3 (sample C). The field effect mobility sharply decreases as the doping concentration increases. Hall mobility measurements have been done to investigate the degradation of the mobility due to doping. The measurement of sample A shows that, as a consequence of the decrease of the free carrier density

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10

Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." Materials Science Forum 556-557 (September 2007): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.823.

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A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current

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11

Pramanik, Md Bappi, Moniruzzaman, Ahsanul Karim, and Aminur Islam Tonmoy. "Doping Effect of Pocket Implementation in MOSFET." European Journal of Engineering and Technology Research 10, no. 2 (2025): 9–15. https://doi.org/10.24018/ejeng.2025.10.2.3244.

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This doping may be critical in MOSFET technology which is among the most commonly used technologies in the manufacturing of electronic gadgets. Doping affects the profile of an MOSFET gate length, channel length and pocket concentration without which the functionality of an electronic device cannot be overemphasise . The specific goals of this thesis are to propose in-pocket designs for Si, Ge and GaAs. Next, we will discuss parameters such as gate length and channel length threshold voltage, pocket definitions and leakage current in semiconductors. This work requires the understanding and pre

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12

Moni, Jackuline, and T. Jaspar Vinitha Sundari. "Junctionless Tunneling Nanowire for Steep Subthreshold Slope." Advanced Science Letters 24, no. 8 (2018): 5695–99. http://dx.doi.org/10.1166/asl.2018.12179.

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Using standardized simulations, we report a meticulous learning of the Junctionless nanowire with tunneling mechanism and the dependence of Subthreshold slope on operational parameters by varying the channel diameter, Gate length and doping concentration using Synopsys Sentaurus TCAD simulations. For the first time, Junctionless Nanowire in the company of tunneling architecture is proposed and explored. Our simulation study shows that a decrease in channel diameter and doping concentration results in higher band to band generation and steeper slope. Junctionless tunneling nanowire of diameter

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13

Han, Tao, Linshan Sun, Qirui Feng, et al. "The mechanism of photogenerated minority carrier movement in organic phototransistors." Journal of Materials Chemistry C 8, no. 35 (2020): 12284–90. http://dx.doi.org/10.1039/d0tc02698k.

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A continuous transmission channel of minority carrier forms under high concentration acceptor doping, leading to poor phototransistor performance. However, the minority carrier cannot move under low acceptor doping, promoting the device performance.

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14

Oliveira, Alberto Vinícius, Guilherme Vieira Gonçalves, Paula Ghedini Der Agopian, et al. "Ground Plane Impact on Performance of Relaxed Ge FinFETs." Journal of Integrated Circuits and Systems 14, no. 1 (2019): 1–6. http://dx.doi.org/10.29292/jics.v14i1.55.

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The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations.

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15

Gudjónsson, G., H. Ö. Ólafsson, Fredrik Allerstam, et al. "Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material." Materials Science Forum 483-485 (May 2005): 833–36. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.833.

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We report investigations of Si face 4H-SiC MOSFETs with aluminum ion implanted gate channels. High quality SiO2/SiC interface is obtained both when the gate oxide is grown on p-type epitaxial material and when grown on ion implanted regions. A peak field effect mobility of 170 cm2/Vs is extracted from transistors with epitaxially grown channel region of doping 5x1015 cm-3. Transistors with implanted gate channels with aluminum concentration of 1x1017 cm-3 exhibit peak field effect mobility of 108 cm2/Vs, while the mobility is 62 cm2/Vs for aluminum concentration of 5x1017 cm-3. The mobility re

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16

K., E. Kaharudin, Salehuddin F., S. M. Zain A., and F. Roslan Ameer. "Geometric and process design of ultra-thin junctionless double gate vertical MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 4 (2019): 2863–73. https://doi.org/10.11591/ijece.v9i4.pp2863-2873.

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The junctionless MOSFET architectures appear to be attractive in realizing the Moore’s law prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double-gate MOSFET (JLDGVM) under geometric and process consideration was introduced in order to obtain excellent electrical characteristics. Geometrical designs such as channel length (Lch) and pillar thickness (Tp) were considered and the impact on the electrical performance was analyzed. The influence of doping concentration and metal gate work function (WF) were further investigated for achieving better performan

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17

Hwang, Bu Kyeong, Ji Hyang An, Bo Ram Lee, et al. "Control of electrical properties in solution-processed ATO thin-film transistors through gallium doping." RSC Advances 15, no. 17 (2025): 13595–602. https://doi.org/10.1039/d5ra00207a.

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18

Das, Namita, and Kaushik Chandra Deva Sarma. "Channel Potential Modelling of Surrounded Channel Junction Less Field Effect Transistor." Journal of Nanoelectronics and Optoelectronics 17, no. 2 (2022): 211–17. http://dx.doi.org/10.1166/jno.2022.3186.

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An analytical model for potential in channel region is obtained for a Surrounded channel junction-less field effect transistor. Two dimensional Poisson’s equation has been solved to obtain the mathematical potential modelling. The dependence of channel potential on gate voltage, gate oxide thickness, type of gate dielectric, doping concentration, channel length is shown. The model is fully analytical in nature and suitable for compact modelling. The potential model developed is compared with results obtained from TCAD numerical simulation results.

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19

Takeda, Hironori, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe. "Evaluation of the Impact of Al Atoms on SiO₂/ SiC Interface Property by Using 4H-SiC n⁺-Channel Junctionless MOSFET." Materials Science Forum 963 (July 2019): 171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.963.171.

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To investigate the impact of Al atoms on channel mobility at SiO2/SiC interface, we fabricated the junctionless metal-oxide-semiconductor field-effect transistors (MOSFETs), in which thin n+-SiC epitaxial layers with and without Al+ ion implantation were used as a channel, and compared their electrical characteristics. The effective mobility (meff) of n+-channel junctionless MOSFET without Al doping was estimated to be 14.9 cm2/Vs, which is higher than inversion-mode MOSFET fabricated with the same gate oxidation condition (3.1 cm2/Vs). The meff values of the MOSFETs with low Al doping concent

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20

Takatsuka, Akio, Yasunori Tanaka, Koji Yano, Tsutomu Yatsuo, and Kazuo Arai. "Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)." Materials Science Forum 645-648 (April 2010): 535–38. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.535.

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We investigated the crystalline quality and electrical properties of the channel regions in 4H-SiC buried gate static induction transistors (SiC-BGSITs). To accurately determine the characteristics of the channel regions, we performed transmission electron microscopy and scanning spreading resistance microscopy. It was found that the channel regions have high crystalline quality and no significant fluctuations in doping concentration.

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21

Wang, Jie Yin, Huai Zhong Xing, and Yi Jie Zeng. "The Electrical Characteristics Induced by B⁺ Doping of Nanotube MOSFET." Advanced Materials Research 677 (March 2013): 20–24. http://dx.doi.org/10.4028/www.scientific.net/amr.677.20.

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In this paper, we not only discuss the effect of doping concentration to conductivity but also some other factors. Such as the thickness of SiO2and the resistance of the conductive part (Si shell). And we have got the consequence that the higher the doping concentration is, the higher conductivity. The reason is that doping increased carrier concentration and then increased µ. The thicker the Si shell is and the shorter lengths the nanotube has, the smaller resistance the conductive part has and the higher conductivity. About the thickness of SiO2, the situation is a little more complex. As a

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22

Myers, Edward R. "Damage removal following low energy ion implantation." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 906–7. http://dx.doi.org/10.1017/s0424820100106594.

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Ion implantation has become the most common method of doping in the semiconductor industry. Precise concentration profiles with exact spatial locations are achievable. However, direct implantation of the desired dopant does not always meet the stringent size requirements of ultra large scale integration (ULSI). Implantation of light ions, such as boron, tend to channel down open crystallographic orientations in crystalline substrates resulting in enhanced ion penetration and an extended doping tail. Channeling can be prevented by creation of an amorphous surface layer prior to the dopant impla

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23

Yoon, Youngbin, Yongki Kim та Myunghun Shin. "Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga2O3 Phototransistors". Sensors 24, № 17 (2024): 5822. http://dx.doi.org/10.3390/s24175822.

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We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet (DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold voltage (VT) switches between negative and positive depending on the β-Ga2O3 channel thickness and doping concentration. Channel depletion and Ga diffusion during manufacturing significantly influence device characteristics, as validated through computer-aided design (TCAD) simulations, which agree with the experimental results. We achieved enhancement-mode (e-mode) operation in <10 nm-thick channels, enabling a zero VG

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24

Ma, Zhenyang, Dexu Liu, Ke Xu, and Zhaobin Duan. "Thermal breakdown characteristics and damage mechanisms of novel GaN HEMT aviation nanodevices in high-intensity radiation fields." Journal of Physics: Conference Series 2820, no. 1 (2024): 012016. http://dx.doi.org/10.1088/1742-6596/2820/1/012016.

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Abstract This paper designs a novel GaN HEMT aviation nanodevice through the Sentaurus-TCAD simulation software. The thermal breakdown characteristics of the device in a high-intensity radiation field environment are investigated. The impact of parameters in the channel and barrier layer on the breakdown of the device is analyzed. The electromagnetic environmental effects of the device are verified, and the damage law of the device is obtained. By injecting high-power microwave signals into the gate, the strength of the internal electric field, concentration of the current, and peak temperatur

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25

Liu, Xiang, Fangpei Li, Wenbo Peng, et al. "Piezotronic and Piezo-Phototronic Effects-Enhanced Core–Shell Structure-Based Nanowire Field-Effect Transistors." Micromachines 14, no. 7 (2023): 1335. http://dx.doi.org/10.3390/mi14071335.

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Piezotronic and piezo-phototronic effects have been extensively applied to modulate the performance of advanced electronics and optoelectronics. In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core–shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established using the finite element method. We performed a sweep analysis of several parameters of the model. The results show that the channel current increases with the channel radial thickness and channel doping concentration, while it decrea

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26

Nemer, J. P., M. de Souza, D. Flandre, and M. A. Pavanello. "Analog Behavior of Submicron Graded-Channel SOI MOSFETs Varying Channel Length, Doping Concentration and Temperature." ECS Transactions 53, no. 5 (2013): 149–54. http://dx.doi.org/10.1149/05305.0149ecst.

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27

Ohnishi, Kazuki, Naoki Fujimoto, Shugo Nitta, et al. "Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy." Journal of Applied Physics 132, no. 14 (2022): 145703. http://dx.doi.org/10.1063/5.0122292.

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The precise control of Mg concentration ([Mg]) in p-type GaN layers from 2.3 × 1016 to 2.0 × 1019 cm−3 was demonstrated by halide vapor phase epitaxy (HVPE) on n-type GaN (0001) freestanding substrates. [Mg] in GaN layers could be controlled well by varying the input partial pressure of MgCl2 formed by a chemical reaction between MgO solid and HCl gas under the thermodynamic equilibrium condition. In the sample with [Mg] of 2.0 × 1019 cm−3, a step-bunched surface was observed because the surface migration of Ga adatoms was enhanced by the surfactant effect of Mg atoms. The samples show high st

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28

Bin Taher, Md Iktiham, and Md Tanvir Hasan. "Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs." AIUB Journal of Science and Engineering (AJSE) 16, no. 1 (2017): 69–74. http://dx.doi.org/10.53799/ajse.v16i1.34.

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Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are promising for switching device applications. The doping of n- and p-layers is varied to evaluate the figure of merits of proposed devices with a gate length of 10 nm. Devices are switched from OFF-state (gate voltage, VGS = 0 V) to ON-state (VGS = 1 V) for a fixed drain voltage, VDS = 0.75 V. The device with channel doping of 1×1016 cm-3 and source/drain (S/D) of 1×1020 cm-3 shows good device performance due to better control of gate over channel. The ON-current (ION), OFF-current (IOFF), subthreshold

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29

Saleem, S., U. Parveen, H. AL- Ghamdi, M. Yaseen, I. Sajjad, and Nasarullah Nasarullah. "Half-metallicity and structural properties of low-concentration Fe-doped SrS alloys: a first-principles study." Chalcogenide Letters 22, no. 3 (2025): 223–37. https://doi.org/10.15251/cl.2025.223.223.

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Present research reveals the doping effect on physical properties of Sr1-xFexS by employing ab-initio calculations. The negative formation energy and optimization outcomes exhibit the stability of the Sr1-xFexS alloys with ferromagnetic phase. Spin dependent band structure (BS) and density of states (DOS) interpret that Sr1-xFexS revealed half metallic ferromagnetic (HMF) nature at 6.25% and 12.5% of Fe doping while metallic character is revealed at 25% concentration of dopant. Spin-up state of Sr0.9375Fe0.0625S and Sr0.8750Fe0.1250S depicts semiconductive behavior with bandgap value of 2.01/2

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Piner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.

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We report on the effect of strain induced polarization fields in AlGaN/GaN heterostructures due to the incorporation of Si dopant ions in the lattice. By Si-doping (Al)GaN, a contraction of the wurtzite unit cell can occur leading to strain in doped AlGaN/GaN heterostructures such as high electron mobility transistors (HEMTs). In a typical modulation doped AlGaN/GaN HEMT structure, the Si-doped AlGaN supply layer is separated from the two-dimensional electron gas channel by an undoped AlGaN spacer layer. This dopant-induced strain, which is tensile, can create an additional source of charge at

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Su, Hui, Wing Man Tang, and Pui To Lai. "Effect of dopant redistribution in gate electrode on surface plasmon resonance in InGaZnO thin-film transistors." AIP Advances 12, no. 11 (2022): 115004. http://dx.doi.org/10.1063/5.0111597.

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To study the effect of dopant redistribution at/near the gate-dielectric/gate-electrode interface during high-temperature processing on surface plasmon resonance in InGaZnO thin-film transistor, boron-doped Si wafers (resistivity = 0.02–0.021 Ω·cm) are annealed in N2 at different temperatures (900, 1000, 1050, and 1100 °C) to achieve lower surface doping concentrations via dopant out-diffusion and then used as the gate electrodes. Compared with the unannealed device, the devices fabricated on 900, 1050, and 1100 °C-annealed wafers show lower carrier mobility because the reduced doping concentr

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32

Okamoto, Mitsuo, Miwako Iijima, Tsutomu Yatsuo, Kenji Fukuda, and Hajime Okumura. "Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices." Materials Science Forum 645-648 (April 2010): 995–98. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.995.

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We fabricated 4H-silicon carbide (SiC) Complementary Metal-Oxide-Semiconductor (CMOS) devices with wet gate oxidation processing. The channel properties of n-channel MOS Field-Effect-Transistor (NMOS) were controlled by buried channel (BC) structure. The electrical properties of CMOS devices depended on the doping concentration of the BC-layer (Nbc) for NMOS. The SiC CMOS inverters with high Nbc indicated fast operation at the delay time (Td) of 4.8 ns for supply voltage of 15 V. To our knowledge, Td obtained in this study is the smallest among the reported values for SiC CMOS inverters.

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Hürner, Andreas, Heinz Mitlehner, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)." Materials Science Forum 858 (May 2016): 917–20. http://dx.doi.org/10.4028/www.scientific.net/msf.858.917.

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In this study, the potential of forward conduction loss reduction of Bipolar-Injection Field-Effect-Transistors (SiC-p-BIFET) with an intended blocking voltage of 10kV by adjusting the doping concentration in the channel-region is analyzed. For the optimization of the SiC-p-BIFET, numerical simulations were carried out. Regarding a desired turn-off voltage of approximately 25V, the optimum doping concentration in the channel-region was found to be 1.4x1017cm-3. Based on these results, SiC-p-BIFETs were fabricated and electrically characterized in the temperature range from 25°C up to 175°C. In

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34

Jung, Hakkee. "Channel Doping Concentration Dependent Threshold Voltage Movement of Asymmetric Double Gate MOSFET." Journal of the Korea Institute of Information and Communication Engineering 18, no. 9 (2014): 2183–88. http://dx.doi.org/10.6109/jkiice.2014.18.9.2183.

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Kitai, Hidenori, Tomoaki Hatayama, Hideto Tamaso, et al. "Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment." Materials Science Forum 858 (May 2016): 639–42. http://dx.doi.org/10.4028/www.scientific.net/msf.858.639.

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We have systematically investigated the trench properties of 4H-SiC for p-type channel doping level formed by epitaxial growth, crystallographic plane, and MOS interface treatment. Our results show that the channel mobilities on the (1-100), (11-20), (-1100), and (-1-120) planes gradually decreased in the range from 1 × 1016 to 1 × 1017 cm-3 as the epitaxial channel concentration increased. An inevitable tradeoff existed between channel mobility (field-effect mobility, µFE) and threshold voltage (Vth) in trench MOSFETs. Furthermore, the maximum µFE at a channel concentration of 1 × 1017 cm-3 w

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MUKHERJEE, SANKHA S., and SYED S. ISLAM. "EFFECTS OF BUFFER LAYER THICKNESS AND DOPING CONCENTRATION ON SiC MESFET CHARACTERISTICS." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 890–96. http://dx.doi.org/10.1142/s0129156404003009.

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Two-dimensional simulations have been carried out using the Atlas® device simulator to investigate the effects of the buffer layer thickness and doping concentration on the electrical characteristics of the SiC MESFET. The variations of transconductance, output resistance, gate-source capacitance, gate-drain capacitance and (cutoff frequency) f T with respect to the change in buffer layer thickness and doping concentration have been investigated. It is observed that the performances of MESFET can be improved by reducing the leakage of channel carrier into the substrate at high drain bias, whic

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Kutsuki, Katsuhiro, Sachiko Kawaji, Yukihiko Watanabe, et al. "Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs." Materials Science Forum 858 (May 2016): 607–10. http://dx.doi.org/10.4028/www.scientific.net/msf.858.607.

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The effect of Al doping concentration (NA) at channel regions ranging from 1.0×1017 to 4.0×1017 cm-3 on the effective channel mobility of electron (μeff) and the threshold voltage (Vth) instability under the positive bias-temperature-stress conditions has been investigated througu the use of trench-gate 4H-SiC MOSFETs with m-face (1-100) channel regions. It was found that μeff degraded with an increase in NA. On the other hand, the increase of NA enlarged the Vth instability. These results indicate that NA has a large impact not only on the Vth value but also on the channel resistance and reli

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Bharti and Poornima Mittal. "Analytical modeling of fringe capacitance in opposite-doped core-shell junctionless nanowire FET." Engineering Research Express 7, no. 1 (2025): 015385. https://doi.org/10.1088/2631-8695/adc0ec.

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Abstract An analytical model of Oppositely Doped Core–Shell Junctionless Nanowire Field Effect Transistor (ODCS-JL-NWFET) using surface potential is proposed in this paper. The model incorporates the influence of fringe capacitance through the gate sidewall spacer on the potential distribution function. The analytical results align well with simulated outcomes across various ODCS-JL-NWFET physical parameters, such as threshold voltage, drain current, and subthreshold slope. Furthermore, the model illustrates the impact of channel length scaling on device parameters for different core thickness

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Jang, Chan-Hee, Gökhan Atmaca та Ho-Young Cha. "Normally-Off β-Ga2O3 MOSFET with an Epitaxial Drift Layer". Micromachines 13, № 8 (2022): 1185. http://dx.doi.org/10.3390/mi13081185.

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A normally-off β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed using a technology computer-aided design (TCAD) device simulation, which employs an epitaxial drift layer grown on an n-type low-doped body layer. The low-doped body layer under the MOS gate enabled normally-off operation, whereas the epitaxial drift layer determined the on-resistance and breakdown characteristics. The effects of the doping concentration of each layer and thickness of the drift channel layer on the device characteristics were investigated to design a device with a breakdown voltage of

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Ghosal, Subhro, Madhabi Ganguly, and Debarati Ghosh. "A Study on Sensitivity of Some Switching Parameters of JLT to Structural Parameters." Nanoscience & Nanotechnology-Asia 10, no. 4 (2020): 433–46. http://dx.doi.org/10.2174/2210681209666190905124818.

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Background: The stringent technological constraints imposed by the requirement of ultra-sharp doping profiles associated with the sub-30 nm regime has led to the search for alternatives to the conventional Metal Oxide Semiconductor (MOS) Field Effect Transistor (FET). An obvious alternative is a device whose architecture does not have any junctions in the sourcechannel- drain path. One such device is the Junctionless transistor comprising of an isolated ultrathin highly doped semiconductor layer whose volume is fully depleted in the OFF state and is around flat- band in the ON state. Such a st

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Abe, Kenichi, Akinobu Teramoto, Shunichi Watabe, et al. "Experimental Investigation of Effect of Channel Doping Concentration on Random Telegraph Signal Noise." Japanese Journal of Applied Physics 49, no. 4 (2010): 04DC07. http://dx.doi.org/10.1143/jjap.49.04dc07.

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JAMALABADI, ZAHRA, PARVIZ KESHAVARZI, and ALI NADERI. "SDC-CNTFET: STEPWISE DOPING CHANNEL DESIGN IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS FOR IMPROVING SHORT CHANNEL EFFECTS IMMUNITY." International Journal of Modern Physics B 28, no. 07 (2014): 1450048. http://dx.doi.org/10.1142/s0217979214500489.

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A novel carbon nanotube field-effect transistor with stepwise doping profile channel (SDC-CNTFET) is introduced for short-channel effects (SCEs) improvement. In SDC-CNTFET, the channel is divided into five sections of equal length. Impurity concentration was reduced from 0.8 nm-1 to zero from the source side to the drain side of the channel, with stepwise profile. The devices have been simulated by the self-consistent solution of two-dimensional (2D) Poisson–Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. We demonstrate that the proposed structure for CNTFET

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Hasan, Iqbal, Pranav Kumar Asthana, Yogesh Goswami, and S. A. M. Rizvi. "Wrapped Channel FET (WCFET)." International Journal of Electronics, Communications, and Measurement Engineering 11, no. 1 (2022): 1–14. http://dx.doi.org/10.4018/ijecme.297084.

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In this article, we examined the electrical characteristic of proposed new device structure, Wrapped Channel Field Effect Transistor (WCFET). Results of WCFET have been analyzed using Atlas 3-D simulator. WCFET shows better transfer characteristics with ON-current ION of ~10-6A and leakage current IOFF of ~10-16 A. Optimization of device characteristics has done with doping concentration (ND), gate work function (ΦG) and spacer dielectric. Impact of gate length and semiconductor film thickness variation on drain current, subthreshold slope (SS) and DIBL are also investigated. Further, effects

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Kim, Jang Hyun, and Hyunwoo Kim. "Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping." Electronics 12, no. 24 (2023): 4932. http://dx.doi.org/10.3390/electronics12244932.

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In this study, a frequency doubler that consists of a tunnel field-effect transistor (TFET) with dual pocket doping is proposed, and its operation is verified using technology computer-aided design (TCAD) simulations. The frequency-doubling operation is important to having symmetrical current characteristics, which eliminate odd harmonics and the need for extra filter circuitry. The proposed TFET has intrinsically bidirectional and controllable currents that can be implemented by pocket doping, which is located at the junction between the source/drain (S/D) and the channel region, to modify tu

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Pérez-Tomás, Amador, Michael R. Jennings, Philip A. Mawby, et al. "SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps." Materials Science Forum 556-557 (September 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.835.

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In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration in

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Kennedy, Noel, Justin D. Holmes, and Brenda Long. "Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation." Langmuir 36, no. 34 (2020): 9993–10002. https://doi.org/10.5281/zenodo.4195838.

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Reported here is a new chemical route for the wet chemical functionalization of germanium (Ge), whereby arsanilic acid is covalently bound to a chlorine (Cl)-terminated surface. This new route is used to deliver high concentrations of arsenic (As) dopants to Ge, via monolayer doping (MLD). Doping, or the introduction of Group III or Group V impurity atoms into the crystal lattice of Group IV semiconductors, is essential to allow control over the electronic properties of the material to enable transistor devices to be switched on and off. MLD is a diffusion-based method for the introduction of

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Niu, Shi Qin, Maxime Berthou, and Dominique Tournier. "Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel." Materials Science Forum 858 (May 2016): 925–28. http://dx.doi.org/10.4028/www.scientific.net/msf.858.925.

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The static characteristics and short-circuit capabilities of SIT (Static Induction Transistor) depend strongly on its channel design. Analysis show that the doping concentration and the width of the channel are crucial parameters in determining the specific on-resistance, threshold voltage and saturation capabilities of the device. Classically SIT is designed with a uniformly doped channel. Improving the saturation capability of such a device comes along with increasing its on resistance. This drawback can be overcome by using non-uniformly doped channel. This paper shows that this technique a

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Brown, A. R., A. Asenov, and J. R. Barker. "3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs." VLSI Design 8, no. 1-4 (1998): 99–103. http://dx.doi.org/10.1155/1998/85325.

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In this paper we describe the use of 3D parallel finite element solution of the Poisson equation to calculate the in-cell breakdown voltage in lateral channel IGBTs. The solver is based on topologically rectangular grids, and uses a domain decomposition approach to partition the problem on an array of mesh connected processors. A parallel BiCGSTAB solver has been developed to solve the Possion equation. Hole and electron ionisation integrals are calculated to determine the breakdown voltage. The effects of varying the doping concentration in the n– base region and stopper surface concentration

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Nagahisa, Yuichi, and Eisuke Tokumitsu. "Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions." Materials Science Forum 717-720 (May 2012): 679–82. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.679.

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To achieve graphene channel transistors which have high on/off drain current ratio and unipolar behavior of drain current – gate voltage (ID-VG) characteristics, we fabricated and characterized the top gated graphene channel transistors with n-type doped SiC source/drain regions. Graphene layer was formed on SiC by high temperature annealing in vacuum, and Al2O3 was used as a gate insulator. For the graphene channel transistor with heavily doped n-SiC source/drain regions (doping concentration ND=4.5x1019cm-3) and a 4~6ML graphene channel, ambipolar behavior was observed. On the other hand, wh

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ALABDULLAH, Murad, Natalia SEOANE, and Antonio GARCIA-LOUREIRO. "Impact of Scaling and Interface Roughness on Drain Current in Nanosheet and Nanowire FETs: A 3D Monte Carlo Analysis." Romanian Journal of Information Science and Technology 28, no. 2 (2025): 185–96. https://doi.org/10.59277/romjist.2025.2.06.

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A 3D finite-element Monte Carlo simulation toolbox, incorporating Schrödinger equation-based quantum corrections, is employed to analyze the performance of nanosheet (NS) and nanowire (NW) field-effect transistors (FETs), which emerged as promising candidates for sub-3 nm CMOS technology. The study investigates the impact of scaling gate length and oxide thickness, increase in source/drain doping concentration, and interface roughness on these architectures. Results indicate that NS-FETs achieve higher ON currents than NW FETs. However, scaling the gate length below 12 nm reduces the drain cur

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