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1

Pramanik, Birendra N., Mike S. Lee, and Guodong Chen, eds. Characterization of Impurities and Degradants Using Mass Spectrometry. John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9780470921371.

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2

Pramanik, Birendra N. Characterization of impurities and degradants using mass spectrometry. John Wiley, 2011.

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3

1933-, Ahuja Satinder, and Alsante Karen Mills, eds. Handbook of isolation and characterization of impurities in pharmaceuticals. Academic Press, 2003.

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4

Patterson, James D. Electronic characterization of defects in narrow gap semiconductors: Final report, November 25, 1992 to November 25, 1994. [National Aeronautics and Space Administration], George C. Marshall Space Flight Center, 1994.

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5

Pajot, Bernard. Optical Absorption of Impurities and Defects in Semiconducting Crystals: Electronic Absorption of Deep Centres and Vibrational Spectra. Springer Berlin Heidelberg, 2013.

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6

Patterson, James D. Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in Mercury Cadmium Telluride Mercury Zinc Telluride and Mercury Zinc Selenide, semi-annual report, September 19, 1994 to March 19, 1995. National Aeronautics and Space Administration, 1995.

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7

Lee, Mike S., Guodong Chen, and Birendra Pramanik. Characterization of Impurities and Degradants Using Mass Spectrometry. Wiley & Sons, Incorporated, John, 2011.

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8

Lee, Mike S., Guodong Chen, and Birendra Pramanik. Characterization of Impurities and Degradants Using Mass Spectrometry. Wiley & Sons, Incorporated, John, 2011.

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9

Lee, Mike S., Guodong Chen, and Birendra Pramanik. Characterization of Impurities and Degradants Using Mass Spectrometry. Wiley & Sons, Incorporated, John, 2011.

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10

Lee, Mike S., Guodong Chen, and Birendra N. Pramanik. Characterization of Impurities and Degradants Using Mass Spectrometry. Wiley & Sons, Incorporated, John, 2011.

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11

Characterization of Impurities and Degradants Using Mass Spectrometry. Wiley & Sons, Incorporated, John, 2011.

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12

Alsante, Karen Mills, and Satinder Ahuja. Handbook of Isolation and Characterization of Impurities in Pharmaceuticals. Elsevier Science & Technology Books, 2003.

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13

Claeys, Cor, and Eddy Simoen. Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact. Springer, 2018.

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14

Ahuja, Satinder, and Karen Mills Alsante. Handbook of Isolation and Characterization of Impurities in Pharmaceuticals (SST) (Separation Science and Technology). Academic Press, 2003.

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15

Claeys, Cor, and Eddy Simoen. Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact. Springer, 2019.

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16

Pajot, Bernard. Optical Absorption of Impurities and Defects in Semiconducting Crystals: Hydrogen-like Centres. Springer, 2011.

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17

Pajot, Bernard. Optical Absorption of Impurities and Defects in Semiconducting Crystals: Hydrogen-like Centres. Springer, 2012.

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18

Pajot, Bernard, and Bernard Clerjaud. Optical Absorption of Impurities and Defects in Semiconducting Crystals: Electronic Absorption of Deep Centres and Vibrational Spectra. Springer Berlin / Heidelberg, 2014.

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19

Pajot, Bernard, and Bernard Clerjaud. Optical Absorption of Impurities and Defects in Semiconducting Crystals: Electronic Absorption of Deep Centres and Vibrational Spectra. Springer, 2012.

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20

Lattman, Eaton E., Thomas D. Grant, and Edward H. Snell. Before the Beamtime. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780199670871.003.0005.

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This chapter describes preparation before collecting solution scattering data. SAXS requires a sample concentration similar to that typically used for crystallization, and a volume on the order of tens of μ‎l. SANS can require an order of magnitude more than this. The sample should be well characterized, and free from impurities. Standard laboratory techniques are suitable for characterization. Buffer choice and accurate matching is a component of experimental success and after sample preparation is the next most critical step. The sample should be monodisperse, stable, and well characterized.
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21

Humpston, Giles, and David M. Jacobson. Principles of Soldering. ASM International, 2004. http://dx.doi.org/10.31399/asm.tb.ps.9781627083522.

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Principles of Soldering serves as a problem-solving guide for engineers who work with soldering processes and soldered components and assemblies. It begins with a review of key process parameters, including surface energy and tension, wetting and contact angle, fluid flow, filler spreading characteristics, dissolution of parent materials, and intermetallic growth. It then examines the factors that influence the functional integrity of soldered joints and the practicality of the process employed. It discusses the metallurgy of solder alloy systems, the effect of metallic impurities, and the use
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