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Journal articles on the topic 'Charge carrier concentration'

Author: Grafiati

Published: 4 June 2021

Last updated: 5 February 2022

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1

Kallenowsky, T., H. Koi, H. Boudriot, O. Oettel, and H. A. Schneider. "Microinhomogeneities of Charge Carrier Concentration in GaAs." Crystal Research and Technology 26, no. 8 (1991): 987–92. http://dx.doi.org/10.1002/crat.2170260805.

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2

Souquet, Jean-Louis, Marcio Luis Ferreira Nascimento, and Ana Candida Martins Rodrigues. "Charge carrier concentration and mobility in alkali silicates." Journal of Chemical Physics 132, no. 3 (January 21, 2010): 034704. http://dx.doi.org/10.1063/1.3271154.

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3

Schütt, H. J., D. Wienß, and M. Doß. "Charge carrier concentration in glasses. dependence on composition." Ionics 1, no. 3 (May 1995): 257–61. http://dx.doi.org/10.1007/bf02426027.

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4

Hamdan, N. "The role of charge carrier concentration in Tl-1234." Physica B: Condensed Matter 284-288 (July 2000): 1093–94. http://dx.doi.org/10.1016/s0921-4526(99)02443-6.

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5

Moser, M., L. P. Scheller, and N. H. Nickel. "Charge carrier transport in boron doped poly-Si." Canadian Journal of Physics 92, no. 7/8 (July 2014): 705–8. http://dx.doi.org/10.1139/cjp-2013-0563.

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The influence of the used substrate and the boron doping concentration of the charge-transport properties of solid-phase crystallized polycrystalline silicon (poly-Si) is explored. The samples were characterized using temperature dependent transport measurements to determine mobility, carrier concentration, and conductivity. While Arrhenius plots of the hole concentration cannot be used to determine the position of the Fermi energy, a detailed analysis of the temperature dependent carrier concentration shows a Meyer–Neldel and an anti-Meyer–Neldel rule. Charge transport in poly-Si on SiN coated Borofloat glass with a boron concentraion [B] < 1016 cm–3 is limited by phonon scattering. On the other hand, for all poly-Si samples on Corning glass and poly-Si on SiN coated Borofloat glass with [B] > 1016 cm–3 charge-carrier transport is governed by thermionic emission over potential barriers. The data are discussed in terms of the Baccarani transport model.

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6

Juška, Gytis, Kristijonas Genevičius, Kęstutis Arlauskas, Ronald Österbacka, and Henrik Stubb. "Features of charge carrier concentration and mobility inπ-conjugated polymers." Macromolecular Symposia 212, no. 1 (April 2004): 209–18. http://dx.doi.org/10.1002/masy.200450820.

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7

Карамов, Д. Д., А. Н. Лачинов, C. А. Пшеничнюк, А. А. Лачинов, A. Ф. Галиев, А. Р. Юсупов, and С. Н. Салазкин. "Допирование несопряженного полимера органическим соединением с двумя устойчивыми энергетическими состояниями." Журнал технической физики 91, no. 5 (2021): 874. http://dx.doi.org/10.21883/jtf.2021.05.50702.285-20.

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We investigate the effect of doping by a small-molecular-weight organic compound phenolphthalein of non-conjugated polymer polydiphenylenephthalide. It is known that phenolphthalein has two energetically stable states - neutral and charged, as a result of the capture of an excess electron. The morphology of polymer films surfaces observed by atomic force microscopy. Analysis of the current-voltage characteristics showed that an increase of the dopant concentration leads to an increase in conductivity. Mounted connection nontrivial fact conductivity growth and mobility of charge carriers with increasing dopant concentration. At same time, an increase in the concentration of the dopant does not lead to a significant change in the charge-carrier concentration.

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8

Карамов, Д. Д., А. Н. Лачинов, C. А. Пшеничнюк, А. А. Лачинов, A. Ф. Галиев, А. Р. Юсупов, and С. Н. Салазкин. "Допирование несопряженного полимера органическим соединением с двумя устойчивыми энергетическими состояниями." Журнал технической физики 91, no. 5 (2021): 874. http://dx.doi.org/10.21883/jtf.2021.05.50702.285-20.

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We investigate the effect of doping by a small-molecular-weight organic compound phenolphthalein of non-conjugated polymer polydiphenylenephthalide. It is known that phenolphthalein has two energetically stable states - neutral and charged, as a result of the capture of an excess electron. The morphology of polymer films surfaces observed by atomic force microscopy. Analysis of the current-voltage characteristics showed that an increase of the dopant concentration leads to an increase in conductivity. Mounted connection nontrivial fact conductivity growth and mobility of charge carriers with increasing dopant concentration. At same time, an increase in the concentration of the dopant does not lead to a significant change in the charge-carrier concentration.

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9

Mirzaraimov, Jakhongir Zokirzhanovich, and Sherzod Akhmadovich Makhmudov. "INVESTIGATION OF THE CARRIER LIFETIME IN NEUTRON-DOPED SILICON DEPENDING ON THE CONCENTRATION OF THE INITIAL BORON." Scientific Reports of Bukhara State University 4, no. 4 (August 28, 2020): 57–61. http://dx.doi.org/10.52297/2181-1466/2020/4/4/2.

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The dependence of the lifetime of charge carriers ()in monocrystalline silicon on the concentration of light copper and post-diffusion cooling is discussed. The results obtained are explained by the redistribution of non-basic carriers at the adhesion level. In the compensated “p-Si” and the control “p-Si”, the relaxation process occurs in different wasy   98s for “p-Si”, and   5s for “p-Si”.At the same time ,with the growth of te initial concentration of charge carriers (in this case boron-B ) in the compensated silicon, an increase (with equal values ) is observed, which is due to a different degree of micro –uniformity in conductivity in the studied samples.

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10

Tomozawa, Minoru, and Dong-Wook Shin. "Charge carrier concentration and mobility of ions in a silica glass." Journal of Non-Crystalline Solids 241, no. 2-3 (November 1998): 140–48. http://dx.doi.org/10.1016/s0022-3093(98)00760-1.

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11

Juška, G., N. Nekrašas, K. Genevičius, J. Stuchlik, and J. Kočka. "Relaxation of photoexited charge carrier concentration and mobility in μc-Si:H." Thin Solid Films 451-452 (March 2004): 290–93. http://dx.doi.org/10.1016/j.tsf.2003.11.053.

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12

Rausch, Elisabeth, Benjamin Balke, Torben Deschauer, Siham Ouardi, and Claudia Felser. "Charge carrier concentration optimization of thermoelectric p-type half-Heusler compounds." APL Materials 3, no. 4 (April 2015): 041516. http://dx.doi.org/10.1063/1.4916526.

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13

Zemek, J., P. Jiricek, B. Lesiak, and A. Jablonski. "Elastic electron backscattering from silicon surfaces: effect of charge-carrier concentration." Surface and Interface Analysis 36, no. 8 (August 2004): 809–11. http://dx.doi.org/10.1002/sia.1770.

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14

Tao, Jing, Jingyi Chen, Jun Li, Leanne Mathurin, Jin-Cheng Zheng, Yan Li, Deyu Lu, et al. "Reversible structure manipulation by tuning carrier concentration in metastable Cu2S." Proceedings of the National Academy of Sciences 114, no. 37 (August 30, 2017): 9832–37. http://dx.doi.org/10.1073/pnas.1709163114.

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The optimal functionalities of materials often appear at phase transitions involving simultaneous changes in the electronic structure and the symmetry of the underlying lattice. It is experimentally challenging to disentangle which of the two effects––electronic or structural––is the driving force for the phase transition and to use the mechanism to control material properties. Here we report the concurrent pumping and probing of Cu2S nanoplates using an electron beam to directly manipulate the transition between two phases with distinctly different crystal symmetries and charge-carrier concentrations, and show that the transition is the result of charge generation for one phase and charge depletion for the other. We demonstrate that this manipulation is fully reversible and nonthermal in nature. Our observations reveal a phase-transition pathway in materials, where electron-induced changes in the electronic structure can lead to a macroscopic reconstruction of the crystal structure.

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15

Fishchuk, Ivan I., Andrey Kadashchuk, Volodymyr N. Poroshin, and Heinz Bässler. "Charge-carrier and polaron hopping mobility in disordered organic solids: Carrier-concentration and electric-field effects." Philosophical Magazine 90, no. 9 (March 21, 2010): 1229–44. http://dx.doi.org/10.1080/14786430903341394.

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16

YU, J., X. F. SUN, Y. Y. XU, and H. ZHANG. "PROPERTIES OF Y1-XSRXBA2-XLAXCU3OY CARRIER COMPENSATION SYSTEM." International Journal of Modern Physics B 21, no. 18n19 (July 30, 2007): 3160–62. http://dx.doi.org/10.1142/s0217979207044081.

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The samples of Y 1-x Sr x Ba 2-x La x Cu 3 O y (YSBLCO) were synthesized and characterized by DC magnetization measurements and X-ray diffraction. The structures of the samples were refined by Rietveld method. Although the carrier concentration in the samples is constant at different dopant levels, the superconductivity evidently changes. We attribute decrease in Tc to a charge redistribution in the crystalline lattice. Comparing the change of the T c value caused by structural influence and carrier concentration, it is suggested that the influence of structural changes on the superconductivity is independent of that induced by carrier concentration.

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17

Rao, Arun D., M. G. Murali, Arul Varman Kesavan, and Praveen C. Ramamurthy. "Experimental investigation of charge transfer, charge extraction, and charge carrier concentration in P3HT:PBD-DT-DPP:PC70BM ternary blend photovoltaics." Solar Energy 174 (November 2018): 1078–84. http://dx.doi.org/10.1016/j.solener.2018.09.072.

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18

MALIK, MD ABDUL, V. D. REDDY, P. VENUGOPAL REDDY, D. R. SAGAR, and PRANKISHAN. "CHARGE TRANSPORT IN GERMANIUM-SUBSTITUTED MAGNESIUM FERRITES." Modern Physics Letters B 08, no. 16 (July 10, 1994): 947–58. http://dx.doi.org/10.1142/s0217984994000959.

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Electrical conductivity (σ) and thermopower measurements have been carried out on some Mg 1+x Ge x Fe 2−2x O 4 (0 < x < 0.4) ferrite samples over a temperature range 300–700 K. Using the experimental values of Seebeck coefficient at various temperatures, the values of charge carrier concentration have been determined. On the basis of the temperature variation of charge carrier mobility, the conduction mechanism in these ferrites has been discussed.

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19

Singh, CP, PK Shukla, and SL Agrawal. "Ion transport studies in PVA:NH4CH3COO gel polymer electrolytes." High Performance Polymers 32, no. 2 (March 2020): 208–19. http://dx.doi.org/10.1177/0954008319898242.

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Ion conducting gel polymer electrolytes (GPEs) are being intensively studied for their potential applications in various electrochemical devices. The poly(vinyl alcohol)-based GPE films containing ammonium acetate (NH4CH3COO) salt have been studied for various concentrations of salt. The gel electrolyte films (GPEs) have been prepared using solution casting technique. Structural characterization carried out using X-ray diffraction reveals an increase in the amorphous nature of the samples on increasing salt concentration up to 70 wt%. The complexation of polymer and salt has been studied by Fourier-transform infrared analysis. Ionic conductivity of the GPEs has been found to increase with salt concentration and reaches an optimum for an intermediate concentration. The room temperature conductivity isotherm exhibits a maximum in conductivity of 2.64 × 10−4 Scm−1 for 65 wt% salt concentration. The temperature dependence of ionic conductivity exhibits a combination of Arrhenius and Vogel–Tamman–Fulcher behavior. Ion transport in the electrolyte system has been explored using dielectric response of the material and the observed variation in conductivity is suitably correlated to the change in charge carrier concentration and mobility of charge carriers.

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20

Foertig, A., A. Baumann, D. Rauh, V. Dyakonov, and C. Deibel. "Charge carrier concentration and temperature dependent recombination in polymer-fullerene solar cells." Applied Physics Letters 95, no. 5 (August 3, 2009): 052104. http://dx.doi.org/10.1063/1.3202389.

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21

Werner, A., M. Kunst, and T. D. Moustakas. "Influence of the impurity concentration on charge carrier dynamics in GaAs films." Applied Physics Letters 56, no. 16 (April 16, 1990): 1558–60. http://dx.doi.org/10.1063/1.103152.

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22

Markov, O. I. "On optimization of the charge carrier concentration in a cooling thermoelectric branch." Technical Physics 50, no. 6 (June 2005): 805–6. http://dx.doi.org/10.1134/1.1947363.

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23

Kratochvílová, I., J. Šebera, B. Paruzel, J. Pfleger, P. Toman, E. Marešová, Š. Havlová, et al. "Electronic functionality of Gd-bisphthalocyanine: Charge carrier concentration, charge mobility, and influence of local magnetic field." Synthetic Metals 236 (February 2018): 68–78. http://dx.doi.org/10.1016/j.synthmet.2018.01.007.

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24

Ribeiro Junior, Luiz Antonio, Wiliam Ferreira da Cunha, Antonio Luciano de Almeida Fonseca, Ricardo Gargano, and Geraldo Magela e Silva. "Concentration effects on intrachain polaron recombination in conjugated polymers." Physical Chemistry Chemical Physics 17, no. 2 (2015): 1299–308. http://dx.doi.org/10.1039/c4cp04514a.

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The influence of different charge carrier concentrations on the recombination dynamics between oppositely charged polarons is numerically investigated using a modified version of the Su–Schrieffer–Heeger (SSH) model that includes an external electric field and electron–electron interactions.

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25

Toman, Petr, Miroslav Menšík, Wojciech Bartkowiak, and Jiří Pfleger. "Modelling of the charge carrier mobility in disordered linear polymer materials." Physical Chemistry Chemical Physics 19, no. 11 (2017): 7760–71. http://dx.doi.org/10.1039/c6cp07789g.

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26

Schütt, H. J., and E. Gerdes. "Space-charge relaxation in ionicly conducting glasses. II. Free carrier concentration and mobility." Journal of Non-Crystalline Solids 144 (January 1992): 14–20. http://dx.doi.org/10.1016/s0022-3093(05)80378-3.

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27

Johns, Robert W., Michelle A. Blemker, Michael S. Azzaro, Sungyeon Heo, Evan L. Runnerstrom, Delia J. Milliron, and Sean T. Roberts. "Charge carrier concentration dependence of ultrafast plasmonic relaxation in conducting metal oxide nanocrystals." Journal of Materials Chemistry C 5, no. 23 (2017): 5757–63. http://dx.doi.org/10.1039/c7tc00600d.

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28

Kim, Sung Hyun. "Control of the Charge Carrier Concentration and Hall Mobility in PEDOT:PSS Thermoelectric Films." Bulletin of the Korean Chemical Society 38, no. 12 (November 17, 2017): 1460–64. http://dx.doi.org/10.1002/bkcs.11327.

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29

Sonnenberg, K., and A. Altmann. "Variation of free charge carrier concentration in doped GaAs studied by phase microscopy." Materials Science and Engineering: B 28, no. 1-3 (December 1994): 481–84. http://dx.doi.org/10.1016/0921-5107(94)90110-4.

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30

Scardamaglia, Mattia, Claudia Struzzi, Silvio Osella, Nicolas Reckinger, Jean-François Colomer, Luca Petaccia, Rony Snyders, David Beljonne, and Carla Bittencourt. "Tuning nitrogen species to control the charge carrier concentration in highly doped graphene." 2D Materials 3, no. 1 (January 6, 2016): 011001. http://dx.doi.org/10.1088/2053-1583/3/1/011001.

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31

Dravid, V. P., H. Zhang, and Y. Y. Wang. "Inhomogeneity of charge carrier concentration along the grain boundary plane in oxide superconductors." Physica C: Superconductivity 213, no. 3-4 (August 1993): 353–58. http://dx.doi.org/10.1016/0921-4534(93)90452-v.

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32

Zhang, Xuning, Shiqing Bi, Jiyu Zhou, Shuai You, Huiqiong Zhou, Yuan Zhang, and Zhiyong Tang. "Temperature-dependent charge transport in solution-processed perovskite solar cells with tunable trap concentration and charge recombination." Journal of Materials Chemistry C 5, no. 36 (2017): 9376–82. http://dx.doi.org/10.1039/c7tc02646c.

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Based on control of the perovskite film thickness, we investigate temperature-dependent charge carrier transport, recombination, traps, and solar cell behavior based on methylammonium lead triiodide films.

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33

Journal, Baghdad Science. "Temperature Dependence of Hall Mobility AndCarrier Concentration of pb0.55S0.45 Films." Baghdad Science Journal 6, no. 1 (March 1, 2009): 129–34. http://dx.doi.org/10.21123/bsj.6.1.129-134.

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Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature

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34

Pankratov, Evgeny L., and Elena A. Bulaeva. "On variation of charge carrier mobility under influence of mismatch-induced stress in a heterostructure." Multidiscipline Modeling in Materials and Structures 14, no. 1 (March 5, 2018): 77–90. http://dx.doi.org/10.1108/mmms-04-2017-0016.

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Purpose The purpose of this paper is to analyze the manufacturing of diffusion-junction heterorectifier with account relaxation of mismatch-induced stress. On the basis of the analysis, the authors formulate recommendations to increase sharpness of the p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. Design/methodology/approach The authors formulate recommendations to increase sharpness of p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. To formulate the recommendations, the authors analyzed the manufacturing of the junction. The authors introduce an analytical approach to analyze the manufacturing. Findings The authors find a possibility to increase sharpness of p-n-heterojunction, homogeneity of concentration of dopant in the junction and charge carrier mobility. Originality/value The results are original.

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35

Oehlschläger, Felix, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, and Peter J. Wellmann. "Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity." Materials Science Forum 615-617 (March 2009): 259–62. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.259.

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Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.

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36

Yezer, Benjamin A., Aditya S. Khair, Paul J. Sides, and Dennis C. Prieve. "Determination of charge carrier concentration in doped nonpolar liquids by impedance spectroscopy in the presence of charge adsorption." Journal of Colloid and Interface Science 469 (May 2016): 325–37. http://dx.doi.org/10.1016/j.jcis.2016.02.014.

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37

Cui, Xiaoyan, Tingjing Hu, Huangyu Wu, Junkai Zhang, Lihua Yang, Xin Zhong, Xiaoxin Wu, et al. "Charge Carrier Transport Behavior and Dielectric Properties of BaF2:Tb3+ Nanocrystals." Nanomaterials 10, no. 1 (January 16, 2020): 155. http://dx.doi.org/10.3390/nano10010155.

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The charge carrier behavior and dielectric properties of BaF2:Tb3+ nanocrystals have been studied by alternating current (AC) impedance spectroscopy. The electron and ion coexist in the transport process. The F− ion’s contribution to the total conduction increases with the doping concentration up to 4% and then decreases. Tb doping leads to the increase of defect quantities and a variation of charge carrier transport paths, which causes the increase of the ion diffusion coefficient and the decreases of bulk and grain boundary resistance. When the Tb-doped concentration is higher than 4%, the effect of deformation potential scattering variation on the transport property is dominant, which results in the decrease of the ion diffusion coefficient and increases of bulk and grain boundary resistance. The conduction properties of our BaF2:Tb3+ nanocrystals are compared with previous results that were found for the single crystals of rare earth-doped BaF2. Tb doping causes increases of both the quantity and the probability of carrier hopping, and it finally leads to increases of BaF2 nanocrystals’ permittivity in the low frequency region.

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38

Endrődi, B., J. Mellár, Z. Gingl, C. Visy, and C. Janáky. "Reasons behind the improved thermoelectric properties of poly(3-hexylthiophene) nanofiber networks." RSC Adv. 4, no. 98 (2014): 55328–33. http://dx.doi.org/10.1039/c4ra09037c.

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39

Kinemuchi, Yoshiaki, Chihiro Ito, Hisashi Kaga, Tomohiro Aoki, and Koji Watari. "Thermoelectricity of Al-doped ZnO at different carrier concentrations." Journal of Materials Research 22, no. 7 (July 2007): 1942–46. http://dx.doi.org/10.1557/jmr.2007.0244.

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Optimization of the carrier concentration is a key to improve the power factor of thermoelectricity. The carrier concentration of sintered zinc oxides was primarily controlled by impurity doping of aluminum and secondarily adjusted by defect concentration by varying the oxygen partial pressure in the range of 101 to 104 Pa. The resultant carrier concentration measured at room temperature ranged from 1 to 1.8 × 1020 cm−3, which drastically modified the thermoelectricity. The Jonker plot of the measured Seebeck coefficient and conductivity revealed deviation of the slope from k/e (where k is the Boltzmann constant and e is the elemental electric charge), which was attributed to a mobility variation with respect to the carrier concentration. The approach to estimating the optimum conductivity taking into account mobility variation is discussed. Finally, the optimum conductivity is estimated to be 1800 to 2000 S/cm for high-temperature operation (500 to 800 °C).

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40

Rodrigues, Bruno P., Heike Ebendorff-Heidepriem, and Lothar Wondraczek. "Decoupling mobility and charge carrier concentration in AgR-AgPO3 glasses (R = Cl, Br, I)." Solid State Ionics 334 (June 2019): 99–104. http://dx.doi.org/10.1016/j.ssi.2019.02.009.

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41

Herms, M., G. Irmer, J. Monecke, and O. Oettel. "Determination of the charge carrier concentration across growth striations inn‐GaAs by Raman spectroscopy." Journal of Applied Physics 71, no. 1 (January 1992): 432–35. http://dx.doi.org/10.1063/1.350673.

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42

Tritt, T. M., D. J. Gillespie, A. C. Ehrlich, and G. X. Tessema. "Charge-Density-Wave Carrier Concentration in NbSe3as a Function of Magnetic Field and Temperature." Physical Review Letters 61, no. 15 (October 10, 1988): 1776–79. http://dx.doi.org/10.1103/physrevlett.61.1776.

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43

Tritt, T. M., A. C. Ehrlich, D. J. Gillespie, and G. X. Tessema. "Effect of an applied magnetic field on the charge-density-wave carrier concentration inNbSe3." Physical Review B 43, no. 9 (March 15, 1991): 7254–62. http://dx.doi.org/10.1103/physrevb.43.7254.

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44

Levin, E. M., R. Hanus, J. Cui, Q. Xing, T. Riedemann, T. A. Lograsso, and K. Schmidt-Rohr. "Phase analysis and determination of local charge carrier concentration in eutectic Mg2Si–Si alloys." Materials Chemistry and Physics 158 (May 2015): 1–9. http://dx.doi.org/10.1016/j.matchemphys.2015.03.017.

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45

Yakimov, E. B. "Estimation of the Maximum Nonequilibrium Charge-Carrier Concentration in GaN Under Electron-Beam Irradiation." Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques 12, no. 5 (September 2018): 1000–1004. http://dx.doi.org/10.1134/s1027451018050373.

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46

Gamarts, A. E. "Determination of the Charge Carrier Concentration in Lead Selenide Polycrystalline Layers Using Reflectance Spectra." Semiconductors 39, no. 6 (2005): 636. http://dx.doi.org/10.1134/1.1944851.

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47

Rodrigues, Ana Candida Martins, Marcio Luis Ferreira Nascimento, Caio Barca Bragatto, and Jean-Louis Souquet. "Charge carrier mobility and concentration as a function of composition in AgPO3–AgI glasses." Journal of Chemical Physics 135, no. 23 (December 21, 2011): 234504. http://dx.doi.org/10.1063/1.3666835.

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48

Ström, C., S. G. Eriksson, J. Albertsson, and N. Winzek. "The influence of composition on polymorphism, structure and charge carrier concentration in TL-2201." Physica C: Superconductivity 235-240 (December 1994): 539–40. http://dx.doi.org/10.1016/0921-4534(94)91493-1.

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49

Novikov, S. V., and A. V. Vannikov. "Dipole trap model and concentration dependence of charge carrier mobility in disordered organic matrices." Chemical Physics 187, no. 3 (October 1994): 289–95. http://dx.doi.org/10.1016/0301-0104(94)89011-0.

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Müller, R., U. Künecke, A. Thuaire, M. Mermoux, M. Pons, and P. Wellmann. "Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering." physica status solidi (c) 3, no. 3 (March 2006): 558–61. http://dx.doi.org/10.1002/pssc.200564148.

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