Relevant bibliographies by topics / Charge carriers

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Charge carriers'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2025

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Journal articles on the topic "Charge carriers"

1

Hermosilla Palacios, Martha Alejandra, Marissa Martinez, Jeff Blackburn, and Alexander Spokoyny. "Quantifying Free Carriers in Doped SWCNTs: An Optical and Magnetic Resonance Approach." ECS Meeting Abstracts MA2023-01, no. 10 (August 28, 2023): 1188. http://dx.doi.org/10.1149/ma2023-01101188mtgabs.

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Single-walled carbon nanotubes (SWCNTs) have become increasingly important for opto-electronic devices due to their strong optical absorption, tunable carrier densities, and large carrier mobilities. To produce electricity in applications like photovoltaics and sensors, after light absorption the bound exciton must be separated into free charges carriers. However, the nature of charges in s-SWCNTs is still unclear and a way to quantify them has remained elusive. To better understand free carriers in doped semiconducting SWCNTs we employ a new class of molecular charge-transfer dopants, functionalized dodecaborane (DDB) molecules, to tune the charge carrier density. These DDB dopants form delocalized hole charge carriers on the SWCNTs due to the spatial separation between nanotube surface and the boron cluster containing the negative counterion. Importantly, the fluorine-decorated DDB dopants have strong 19F resonances, characteristic of the negatively charged molecules, that can quantify the absolute concentrations of DDB- and SWCNT+. As such, we use a combined approach of steady state optical spectroscopy and 19F NMR studies. Optical spectroscopy allows to track the excitonic absorption quenching and trion signature due to charge carrier density while correlating it to the concentration of carriers extracted from NMR experiments. This combined methodology allows for quantitative determination of a molar extinction coefficient for free carriers in semiconducting SWCNTs. This molar extinction coefficient can then be used in further studies to determine the yield and mobility of free carriers generated in a variety of samples and applications, for example at a heterojunction in photovoltaic devices, to determine quantitative charge transfer efficiencies and dynamics.
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Katayama, Kenji, Kei Kawaguchi, Yuta Egawa, and Zhenhua Pan. "Local Charge Carrier Dynamics for Photocatalytic Materials Using Pattern-Illumination Time-Resolved Phase Microscopy." Energies 15, no. 24 (December 16, 2022): 9578. http://dx.doi.org/10.3390/en15249578.

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We showed two demonstrations of the local charge carrier dynamics measurements of photocatalytic materials using our recently developed time-resolved phase-contrast microscopic technique combined with the clustering analyses. In this microscopic time-resolved technique, we observed the charge carrier dynamics via the refractive index change instead of the luminescence or absorption change, where we could often observe non-radiative charge carrier processes such as charge carrier trapping and non-radiative relaxation. By the clustering analyses of all the pixel-by-pixel responses, we could extract various different charge carrier dynamics because photocatalytic materials have inhomogeneity on surfaces and the charge carrier behavior depends on the local structure and species. Even for typical photocatalytic materials, titanium oxide and hematite, we could recognize various charge carrier dynamics, which cannot be differentiated by the general fitting procedure for the averaged time response. We could categorize the surface-trapped charge carriers (holes and electrons) and bulk carriers in the nanosecond to millisecond order, which indicates that this analytical procedure will play an important role in understanding the charge carrier dynamics for various photocatalytic materials.
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Galovic, Slobodanka, Katarina Djordjevic, Milica Dragas, Dejan Milicevic, and Edin Suljovrujic. "Dynamics of Photoinduced Charge Carrier and Photothermal Effect in Pulse-Illuminated Narrow Gap and Moderate Doped Semiconductors." Mathematics 13, no. 2 (January 14, 2025): 258. https://doi.org/10.3390/math13020258.

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When a sample of semiconducting material is illuminated by monochromatic light, in which the photon energy is higher than the energy gap of the semiconductor, part of the absorbed electromagnetic energy is spent on the generation of pairs of quasi-free charge carriers that are bound by Coulomb attraction. Photo-generated pairs diffuse through the material as a whole according to the density gradients established, carrying part of the excitation energy and charge through the semiconducting sample. This energy is indirectly transformed into heat, where the excess negatively charged electron recombines with a positively charged hole and causes additional local heating of the lattice. The dynamic of the photoexcited charge carrier is described by a non-linear partial differential equation of ambipolar diffusion. In moderate doped semiconductors with a low-level injection of charge carriers, ambipolar transport can be reduced to the linear parabolic partial differential equation for the transport of minority carriers. In this paper, we calculated the spectral function of the photoinduced charge carrier distribution based on an approximation of low-level injection. Using the calculated distribution and inverse Laplace transform, the dynamics of recombination photoinduced heat sources at the surfaces of semiconducting samples were studied for pulse optical excitations of very short and very long durations. It was shown that the photoexcited charge carriers affect semiconductor heating depending on the pulse duration, velocity of surface recombination, lifetime of charge carriers, and their diffusion coefficient.
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Juška, Gytis, Kęstutis Arlauskas, and Kristijonas Genevičius. "Charge carrier transport and recombination in disordered materials." Lithuanian Journal of Physics 56, no. 3 (October 17, 2016): 182–89. http://dx.doi.org/10.3952/physics.v56i3.3367.

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In this brief review the methods for investigation of charge carrier transport and recombination in thin layers of disordered materials and the obtained results are discussed. The method of charge carrier extraction by linearly increasing voltage (CELIV) is useful for the determination of mobility, bulk conductivity and density of equilibrium charge carriers. The extraction of photogenerated charge carriers (photo-CELIV) allows one to independently investigate relaxation of both the mobility and density of photogenerated charge carriers. The extraction of injected charge carriers (i-CELIV) is effective for the independent investigation of transport peculiarities of both injected holes and electrons in bulk heterojunctions. For the investigation of charge carrier recombination we proposed integral time-of-flight (TOF) and double-injection (DI) current transient methods. The methods allowed us to obtain the following significant results: to determine the reason of the conductivity dependence on electric field strength and temperature in the amorphous and microcrystalline hydrogenated silicon and π-conjugated polymers, the time dependent Langevin recombination, the impact of morphology on charge carrier mobility, the reason of reduced Langevin recombination in RR-PHT (regioregular poly(3-hexylthiophene))/PCBM (1-(3-methoxycarbonyl)propyl-1phenyl-[6,6]-methanofullerene) bulk heterojunction structures – 2D Langevin recombination; and to evaluate that the mobility of holes is predetermined by off-diagonal dispersion in poly-PbO.
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5

Roy, Palas. "Hot-carriers in organic photovoltaics." Pure and Applied Chemistry 93, no. 2 (January 28, 2021): 223–30. http://dx.doi.org/10.1515/pac-2020-1001.

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Abstract Photogenerated charge carriers in organic photovoltaics (OPVs) suffer relaxation and recombination losses. However, extracting these carriers at higher energy (‘Hot-carriers’) has been found to be effective to overcome such loss pathways and improve efficiency of OPVs. Excess energy and long delocalization length promotes hot-carrier escape from Coulombic attraction and dissociation into free charges. Here, I have reviewed the ways to generate hot-carriers and their extraction in organic backbones. In-depth understanding of their energetics and dynamics will help designing hot-carrier photovoltaics.
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Kumar, Krishan, and Maria Wächtler. "Unravelling Dynamics Involving Multiple Charge Carriers in Semiconductor Nanocrystals." Nanomaterials 13, no. 9 (May 8, 2023): 1579. http://dx.doi.org/10.3390/nano13091579.

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The use of colloidal nanocrystals as part of artificial photosynthetic systems has recently gained significant attention, owing to their strong light absorption and highly reproducible, tunable electronic and optical properties. The complete photocatalytic conversion of water to its components is yet to be achieved in a practically suitable and commercially viable manner. To complete this challenging task, we are required to fully understand the mechanistic aspects of the underlying light-driven processes involving not just single charge carriers but also multiple charge carriers in detail. This review focuses on recent progress in understanding charge carrier dynamics in semiconductor nanocrystals and the influence of various parameters such as dimension, composition, and cocatalysts. Transient absorption spectroscopic studies involving single and multiple charge carriers, and the challenges associated with the need for accumulation of multiple charge carriers to drive the targeted chemical reactions, are discussed.
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7

Lascialfari, A., P. Ghigna, and S. De Gennaro. "Susceptibility and Evidences of Charge Carriers Interaction above Tc in Nd1.85Ce0.15CuO4+δ." International Journal of Modern Physics B 13, no. 09n10 (April 20, 1999): 1151–56. http://dx.doi.org/10.1142/s0217979299001107.

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The charge carrier density plays a crucial role in the transition between normal and superconducting state in the copper-oxide superconductors. In Nd 1.85 Ce 0.15 CuO 4+δ sample, for charge carrier density n = nc≃ 0.07 the superconductivity sets in. In order to investigate the magnetic properties around nc, a set of magnetic susceptibility measurements in the temperature range 3-260K for samples with different charge carriers concentrations were realized. Magnetic susceptibility curves of Nd 1.85 Ce 0.15 CuO 4+δ revealed novel behavior well above the critical temperature T c: at fixed T ≥45 K , the susceptibility χ, reported as a function of the charge carrier density n, shows a peak around n=0.06 and drops to significantly lower values for n greater than 0.07, the value at which the samples become superconducting. The effective magnetic moment μeff shows the same behavior. The comparison of the present experimental results with recent transport ones gives evidence of a possible interaction between charge carriers above T c. The possibility that this effect could be due to a bipolarons-like mechanism of charge carriers interaction is discussed.
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Nagaya Wong, Narumi, Seung Kyun Ha, Kristopher Williams, Wenbi Shcherbakov-Wu, James W. Swan, and William A. Tisdale. "Robust estimation of charge carrier diffusivity using transient photoluminescence microscopy." Journal of Chemical Physics 157, no. 10 (September 14, 2022): 104201. http://dx.doi.org/10.1063/5.0100075.

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Transient microscopy has emerged as a powerful tool for imaging the diffusion of excitons and free charge carriers in optoelectronic materials. In many excitonic materials, extraction of diffusion coefficients can be simplified because of the linear relationship between signal intensity and local excited state population. However, in materials where transport is dominated by free charge carriers, extracting diffusivities accurately from multidimensional data is complicated by the nonlinear dependence of the measured signal on the local charge carrier density. To obtain accurate estimates of charge carrier diffusivity from transient microscopy data, statistically robust fitting algorithms coupled to efficient 3D numerical solvers that faithfully relate local carrier dynamics to raw experimental measurables are sometimes needed. Here, we provide a detailed numerical framework for modeling the spatiotemporal dynamics of free charge carriers in bulk semiconductors with significant solving speed reduction and for simulating the corresponding transient photoluminescence microscopy data. To demonstrate the utility of this approach, we apply a fitting algorithm using a Markov chain Monte Carlo sampler to experimental data on bulk CdS and methylammonium lead bromide (MAPbBr3) crystals. Parameter analyses reveal that transient photoluminescence microscopy can be used to obtain robust estimates of charge carrier diffusivities in optoelectronic materials of interest, but that other experimental approaches should be used for obtaining carrier recombination constants. Additionally, simplifications can be made to the fitting model depending on the experimental conditions and material systems studied. Our open-source simulation code and fitting algorithm are made freely available to the scientific community.
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Geiregat, Pieter, Christophe Delerue, Yolanda Justo, Michiel Aerts, Frank Spoor, Dries van Thourhout, Laurens Siebbeles, Guy Allan, Arjan Houtepen, and Zeger Hens. "A Phonon Scattering Bottleneck for Carrier Cooling in Lead-Chalcogenide Nanocrystals." MRS Proceedings 1787 (2015): 1–5. http://dx.doi.org/10.1557/opl.2015.595.

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ABSTRACTThe cooling dynamics of hot charge carriers in colloidal lead chalcogenide nanocrystals is studied by white light transient absorption spectroscopy. We demonstrate a transient accumulation of charge carriers at a high-energy critical point in the Brillouin zone. Using a theoretical study of the cooling rate in lead chalcogenides, we attribute this slowing down of charge carrier cooling to a phonon scattering bottleneck around this critical point. Our approach allows for the first ever determination of hot carrier cooling rates, relevant in e.g. modeling of multiple exciton generation.
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Katayama, Kenji, Tatsuya Chugenji, and Kei Kawaguchi. "Charge Carrier Trapping during Diffusion Generally Observed for Particulate Photocatalytic Films." Energies 14, no. 21 (October 26, 2021): 7011. http://dx.doi.org/10.3390/en14217011.

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Photo-excited charge carriers play a vital role in photocatalysts and photovoltaics, and their dynamic processes must be understood to improve their efficiencies by controlling them. The photo-excited charge carriers in photocatalytic materials are usually trapped to the defect states in the picosecond time range and are subject to recombination to the nanosecond to microsecond order. When photo-excited charge carrier dynamics are observed via refractive index changes, especially in particulate photocatalytic materials, another response between the trapping and recombination phases is often observed. This response has always provided the gradual increase of the refractive index changes in the nanosecond order, and we propose that the shallowly trapped charge carriers could still diffuse and be trapped to other states during this process. We examined various photocatalytic materials such as TiO2, SrTiO3, hematite, BiVO4, and methylammonium lead iodide for similar rising responses. Based on our assumption of surface trapping with diffusion, the responses were fit with the theoretical model with sufficient accuracy. We propose that these slow charge trapping processes must be included to fully understand the charge carrier dynamics of particulate photocatalytic materials.
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Dissertations / Theses on the topic "Charge carriers"

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Meyertholen, Andrew. "Characteristics of charge carriers in nanostructures." Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p3355877.

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Thesis (Ph. D.)--University of California, San Diego, 2009.
Title from first page of PDF file (viewed July 2, 2009). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 96-100).
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Kozikov, Aleksey. "Interference and interaction of charge carriers in graphene." Thesis, University of Exeter, 2011. http://hdl.handle.net/10036/3080.

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Electron transport at low temperatures in two-dimensional electron systems is governed by two quantum corrections to the conductivity: weak localisation and electron-electron interaction in the presence of disorder. We present the first experimental observation of these quantum corrections in graphene, a single layer of carbon atoms, over a temperature range 0.02 - 200 K. Due to the peculiar properties of graphene, weak localisation is sensitive not only to inelastic, phase-breaking scattering events, but also to elastic scattering mechanisms. The latter includes scattering within and between the two valleys (intra- and inter-valley scattering, respectively). These specifics make it possible, for example, to observe a transition from weak localisation to antilocalisation. Our work reveals a number of surprising features. First of all the transition occurs not only as the carrier density is varied, but also as the temperature is tuned. The latter has never been observed in any other system studied before. Second, due to weak electron-phonon interaction in graphene, quantum interference of electrons survives at very high temperatures, up to 200 K. For comparison, in other two-dimensional (2D) systems the weak localisation effect is only seen below 50 K. The electron-electron interaction correction is also affected by elastic scattering. In a two-valley system, there are two temperature regimes of the interaction correction that depend on the strength of inter-valley scattering. In both regimes the correction has its own expression. We show that because of the intra-valley scattering, a third regime is possible in graphene, where the expression for the correction takes a new form. The study of weak localisation demonstrates that the third regime is realised in our experiments. We use the new expression to determine the Fermiliquid parameter, which turns out to be smaller than in other 2D systems due to the chirality of charge carriers. At very low temperatures (below 100 mK) we observe a saturation of the electron dephasing length. We study different mechanisms that could be responsible for the saturation and discuss in detail one of them – spin-orbit interaction. We determine the spin coherence length from studies of weak localisation and the temperature dependence of the conductivity and found good agreement between the two types of experiments. We also show the way to tune the spin coherence length by an order of magnitude by controlling the level of disorder. However, experiment shows contradictions with theory both in values of the spin coherence length and the type of spin relaxation. We speculate about another spin-related mechanism, spin flip by vacancies, which to some extent could also explain our observations. We also present electron transport in graphene irradiated by gallium ions. Depending on the dosage of irradiation the behavior of electrons changes. Namely, electron localisation can be tuned from weak to strong. At low dosages we observe the weak localisation regime, where the mentioned quantum corrections to the conductivity dominate at low temperatures. We found the electron scattering between the valleys to be enhanced, attributing it to atomically sharp defects (kicked out carbon atoms) produced by ion irradiation. We also speculate that gallium ions can be embedded in the substrate or trapped between silica and graphene. We draw this conclusion after investigation of the spin-orbit interaction in irradiated samples. At high dosages electrons become strongly localised and their transport occurs via variable-range hopping.
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Ito, H., Y. Yokochi, H. Tanaka, S. Kuroda, R. Kanehama, M. Umemiya, H. Miyasaka, et al. "Charge carriers in the divalent conductor (BEDT-TTF)Cu_2Br_4." The American Physical Society, 2005. http://hdl.handle.net/2237/7154.

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4

Devasagayam, Peter. "Experimental investigations into charge and spin carriers in polyaniline." Thesis, Durham University, 1998. http://etheses.dur.ac.uk/4745/.

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Conductivity and electron spin resonance measurements have been performed on solution doped polyaniline (PANi). It is proposed that both camphor-sulphonic acid (CSA) and 2-acrylamido-2-methyl-l-propanesulphonic acid (AMPSA) doped PANi can be described by the same model. It is suggested that the polyaniline materials are composed of differently ordered layers, a highly ordered region forming the core of the crystallites. The core of the crystallites are believed to be encapsulated within a semi- ordered region, with the crystallites themselves being dispersed in an amorphous polymer matrix. The conductivity measurements and ESR results described in this work support the proposal that within the highly ordered region of doped polyaniline crystallites, a polaronic lattice exists. The polaronic lattice facilitates "free" carriers which are responsible for "metallic" conduction within the crystallites. Encapsulating the polaronic lattice is a semi-ordered region in which (partially) mobile polarons (and possibly bipolarons) are present. The highly conductive crystallites are randomly dispersed in a less conductive polymer matrix. Charge transport within this heterogeneous system is well described by a heterogeneous metal - fluctuation induced tunnelling (FIT) model. The differences in the temperature dependent conductivities of the PANi-CSA and PANi-AMPSA materials are attributed to the systems having layers of different relative sizes (in the above model). AMPSA doped polyaniline films had a maximum room temperature conductivity of ~100 Scm(^-1). This material also showed potential for use as an electrode layer in polymer LEDs, to replace ITO coated glass. The conductivity of PANi-AMPSA was measured to be 50 ± 10 Scm(^-1) at thickness' of ~30nm. Layers of this thickness provide >90% optical transmission between 450 and 675 nm (most of the visible spectrum). Faraday rotation measurements have shown that the recently reported large Faraday rotation of polyaniline can not be reproduced. The limited results of the Faraday rotation experiments described in this work provide support for the theory that charge carriers in polyaniline have an effective mass of at least 100 times that of a free electron. It has also been shown that the claims of a polyaniline derivative (namely the Marcoussis polymer) being an entirely organic ferromagnet are unsubstantiated, despite intense investigation.
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Tolvaišienė, Sonata. "Transport of charge carriers in ultrathin films of manganese oxides." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20090218_143224-76401.

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The objective of this dissertation is to investigate lanthanum manganites, which exhibit colossal negative magnetoresistance and phase transitions from the paramagnetic state to the ferromagnetic state. The magnetoresistance and its ani-zotriopy of thin epitaxial manganite films at low (up to  0.5 T) magnetic fields, as well as effects induced by strong pulsed magnetic and electric fields were in-vestigated. It was demonstrated how it can be used in the development of magne-tic field sensors, short electric pulse forming devices and amplitude modulators. It was found that in the case of ultra-thin La-Sr-MnO3 films, the sign and value of the magnetoresistance anisotropy at low magnetic fields depends on the thickness of the films. An explanation of these results was proposed using the mean field approach and taking into consideration that the structure of the films changes with its thickness. A reversible thermoelectrical switching effect was discovered and investigated. A new method for nanosecond duration electrical pulses amplitude modulation by an external magnetic field using La0.87Sr0.17MnO3 films was suggested and experimentally verified. This dissertation consists of the abstracts in Lithuanian and English, intro-duction, six chapters, the main results and conclusions and list of literature. The introduction contains topicality and problem, the aim of the work, tasks, scientific novelty, practical value, approval of the results, statement to be de-fended and... [to full text]
Disertacijoje nagrinėjami lantano manganitai, pasižymintys faziniu virsmu iš paramagnetinės į feromagnetinę būseną bei milžiniškos neigiamos magnetovar-žos efektu. Tiriami magnetovaržos ir jos anizotropijos efektai silpnuose (iki  0,5 T) magnetiniuose laukuose bei stiprių impulsinių srovių ir magnetinių laukų sukelti efektai plonuose epitaksiniuose manganitų sluoksniuose. Pateikiami pasiūlymai tyrimo rezultatus panaudoti kuriant magnetinio lauko jutiklius, spar-čiųjų elektrinių impulsų formuotuvus bei amplitudės moduliatorius. Tiriant sil-pnų magnetinių laukų poveikį ultraplonųjų La-Sr-MnO3 sluoksnių elektriniam laidumui, buvo nustatyta, kad magnetovaržos anizotropijos ženklas ir vertė šiuo-se laukuose priklauso nuo sluoksnio storio. Pateiktas modelis, paaiškinantis eks-perimentinius rezultatus, paremtas vidutinio lauko artiniu ir įskaitantis sluoksnio struktūros kitimą kintant jo storiui. Aptiktas ir ištirtas grįžtamasis termoelektrinis nestabilumas, išaiškintos šio reiškinio atsiradimo priežastys. Pasiūlytas ir ekspe-rimentiškai realizuotas naujas ns trukmės elektrinių impulsų amplitudės modulia-vimo išoriniu magnetiniu lauku būdas, naudojant epitaksinius La0,87Sr0,17MnO3 sluoksnius. Disertaciją sudaro reziumė lietuvių ir anglų kalbomis, įvadas, šeši skyriai, pagrindiniai rezultatai ir išvados, literatūros sąrašas, publikacijų disertacijos tema sąrašas. Įvadiniame skyriuje nagrinėjamas problemos aktualumas, formuluojamas darbo tikslas bei uždaviniai, aprašomas mokslinis... [toliau žr. visą tekstą]
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Simons, Benjamin David. "Charge carriers in magnetic Mott insulators : a route to superconductivity." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358784.

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Townsend, Paul David. "Photoexcitation and transport of charge carriers in Durham-route polyacetylene." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329161.

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Ansaripour, Ghassem. "Hot carriers and high field effects in SiGe heterostructures." Thesis, University of Warwick, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343250.

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Martínez, Moreno Elías [Verfasser]. "Kinetics of charge carriers in Si, SiNx heterojunctions / Elías Martínez Moreno." Berlin : Freie Universität Berlin, 2010. http://d-nb.info/1024103498/34.

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Röder, Christian. "Strain, charge carriers, and phonon polaritons in wurtzite GaN - a Raman spectroscopical view." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2015. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-173073.

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Die vorliegende Dissertation befasst sich mit der ramanspektroskopischen Charakterisierung von Galliumnitrid (GaN). Der Zusammenhang zwischen Waferkrümmung und mechanischer Restspannungen wird diskutiert. Mit Hilfe konfokaler Mikro-Ramanmessungen wurden Dotierprofile nachgewiesen sowie die Ladungsträgerkonzentration und -beweglichkeit ermittelt. Sämtliche Ramantensorelemente von wz-GaN wurden erstmals durch die Anwendung verschiedener Streugeometrien bestimmt. Eine neu entwickelte Vorwärtsstreuanordnung ermöglichte die Beobachtung von Phonon-Polaritonen. Es konnte gezeigt werden, dass von der theoretischen und experimentellen Betrachtung der Ramanstreuintensitäten dieser Elementaranregungen eindeutig das Vorzeichen der Faust-Henry-Koeffizienten von wz-GaN abgeleitet werden kann. Im Rahmen dieser Arbeit wurden alle Faust-Henry-Koeffizienten für GaN experimentell bestimmt
This thesis focuses on special aspects of the Raman spectroscopical characterization of wurtzite gallium nitride (wz-GaN). The correlation between wafer curvature and residual stress is discussed. By means of confocal micro-Raman measurements doping profiles were detected as well as the density and mobility of free charge carriers were deduced. All Raman scattering cross sections of wz-GaN were determined the first time using different scattering configurations. A novel method for near-forward scattering was developed in order to observe phonon polaritons with pure symmetry. It is shown that the theoretical and experimental consideration of the Raman scattering efficiency of these elementary excitations allow for determining the sign of the Faust-Henry coefficients of wz-GaN unambiguously. The Faust-Henry coefficients of GaN were deduced from Raman scattering efficiencies of corresponding TO and LO phonons
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Books on the topic "Charge carriers"

1

Atallah, Timothy Luke. Spectroscopy of Charge Carriers at Ionic Liquid/Semiconductor Interfaces. [New York, N.Y.?]: [publisher not identified], 2017.

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Zeinert, Andreas. Injection and transport of charge carriers in high field electroluminescent devices. Berlin: W&T, Wissenschaft und Technik Verlag, 1994.

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Zhao, Guo-meng. Oxygen isotope effects in the magnetoresitive manganites and superconductive cuprates: Evidence for polaronic charge carriers. [s.l.]: [s.n.], 1997.

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Ellingson, Randy J. Development of novel nanocrystal-based solar cell to exploit multiple exciton generation. Golden, Colo.]: National Renewable Energy Laboratory, 2010.

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United States. Interstate Commerce Commission. Office of Public Assistance. Small carrier transfer and name change procedures. Washington, D.C: The Commission, 1988.

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E, Emeritz Robert, Tobias Jeffrey, and Pike and Fischer Inc, eds. Pike & Fischer's common carrier rates, charges & practices. Bethesda, Md. (4600 East-West Hwy., Suite 200, Bethesda 20814-1438): Pike & Fischer, 1994.

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Schroeder, Dietmar. Modelling of interface carrier transport for device simulation. Wien: Springer-Verlag, 1994.

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Watters, Marge. It's your move: A personal and practical guide to career transition and job search for Canadian managers, professionals and executives. 2nd ed. Toronto: HarperCollins, 2004.

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Watters, Marge. It's your move: A personal and practical guide to career transition and job search for Canadian managers, professionals and executives. Toronto: HarperCollins, 2001.

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Ying-quan, Peng, ed. Charge carrier transport in organic semiconductor thin film devices. New York: Nova Science Publishers, 2008.

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Book chapters on the topic "Charge carriers"

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Warnes, L. A. A. "Charge Carriers in Semiconductors." In Electronic Materials, 84–117. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4615-6893-3_4.

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Giesecke, Johannes. "Dynamics of Charge Carriers." In Springer Theses, 25–63. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-06157-3_3.

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Warnes, L. A. A. "Charge Carriers in Semiconductors." In Electronic Materials, 84–117. London: Macmillan Education UK, 1990. http://dx.doi.org/10.1007/978-1-349-21045-9_4.

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Winnacker, Albrecht. "Transport of Charge Carriers." In The Physics Behind Semiconductor Technology, 25–37. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-10314-8_2.

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Durrani, Z. A. K., B. W. Alphenaar, H. Ahmed, and K. Köhler. "Charge Gating of Nanometer Scale Pillar Arrays." In Hot Carriers in Semiconductors, 283–86. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_65.

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Nowozin, Tobias. "Charge Carriers in Quantum Dots." In Self-Organized Quantum Dots for Memories, 25–39. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-01970-3_3.

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Fischler, Wolfgang, Günther Zandler, and Ralph A. Höpfel. "Oscillatory Transport of Electrons in GaAs Surface-Space-Charge Fields." In Hot Carriers in Semiconductors, 61–64. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_14.

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Scheibenzuber, Wolfgang G. "Dynamics of Charge Carriers and Photons." In GaN-Based Laser Diodes, 55–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-24538-1_6.

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Poelking, Carl R. "Charge Carriers at Organic–Organic Interfaces." In Springer Theses, 67–92. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69599-0_4.

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Poelking, Carl R. "Charge Carriers in Disordered Bulk Mesophases." In Springer Theses, 93–104. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-69599-0_5.

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Conference papers on the topic "Charge carriers"

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Anders, D., M. Stein, and S. Chatterjee. "Interplay of near band-edge excitations with unbound charge-carriers." In CLEO: Fundamental Science, FW3I.2. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_fs.2024.fw3i.2.

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Electron-exciton scattering in semiconductor quantum wells is investigated by ultrafast optical pump-terahertz probe spectroscopy. The energy of the electron-hole plasma is varied, revealing a strong energy dependence of elastic and inelastic scattering.
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Antonio, Braulio, and Jean-Michel Nunzi. "Towards Coherent Control of Charge Carriers in Back Gated Graphene." In Latin America Optics and Photonics Conference, W4A.24. Washington, D.C.: Optica Publishing Group, 2024. https://doi.org/10.1364/laop.2024.w4a.24.

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Gyawali, Sunil, Ravi Teja A. Tirumala, Marimuthu Andiappan, and Alan D. Bristow. "Charge Separation in Metal-Semiconductor Nanocatalytic Heterojunctions." In CLEO: Science and Innovations, SF3G.4. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sf3g.4.

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The rate equation associated with recombination dynamics of photoexcited charge carriers in Cu2O and Cu2O/Pd nanocatalysts shows suppressed Auger scattering in Cu2O/Pd possibly due to the photoexcited electron transfer across the heterojunction.
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Samkharadze, Nodar, Ashwani Kumar, and Gabor A. Csathy. "Charge Carriers at milliKelvin Temperatures." In 2010 18th Biennial University/ Government/Industry Micro/Nano Symposium (UGIM). IEEE, 2010. http://dx.doi.org/10.1109/ugim.2010.5508929.

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Kim, Y. H., F. Li, and S. W. Cheong. "Dynamics of charge carriers in cuprates." In International Conference on Science and Technology of Synthetic Metals. IEEE, 1994. http://dx.doi.org/10.1109/stsm.1994.836135.

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Xue, Qingjiang, Igor Timoshkin, Martin J. Given, Mark P. Wilson, and Scott J. MacGregor. "Mobility of Charge Carriers in Dielectric Liquids." In 2019 IEEE 20th International Conference on Dielectric Liquids (ICDL). IEEE, 2019. http://dx.doi.org/10.1109/icdl.2019.8796776.

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Lyshevski, Sergey Edward, and A. S. C. Sinha. "Control of Charge Carriers in Molecular Devices." In 2008 8th IEEE Conference on Nanotechnology (NANO). IEEE, 2008. http://dx.doi.org/10.1109/nano.2008.99.

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Mizutani, Teruyoshi. "Behavior of Charge Carriers in Organic Insulating Materials." In 2006 IEEE Conference on Electrical Insulation and Dielectric Phenomena. IEEE, 2006. http://dx.doi.org/10.1109/ceidp.2006.312049.

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Song, Y. C., X. Y. Liu, K. Zhao, J. F. Kang, R. Q. Hant, Z. L. Xia, D. Kim, and K.-H. Lee. "Local accumulated free carriers in charge trapping memory." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418392.

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Mizutanim, T. "Behavior of charge carriers near metal/polymer interface." In Proceedings of 2005 International Symposium on Electrical Insulating Materials, 2005. (ISEIM 2005). IEEE, 2005. http://dx.doi.org/10.1109/iseim.2005.193303.

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Reports on the topic "Charge carriers"

1

Ellis, Scott, David Chandler, Joseph Michael, and Craig Nakakura. Ultrafast Electron Microscopy for Spatial-Temporal Mapping of Charge Carriers. Office of Scientific and Technical Information (OSTI), October 2021. http://dx.doi.org/10.2172/1828105.

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Zhu, Xiaoyang, and C. Daniel Frisbie. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors. Office of Scientific and Technical Information (OSTI), August 2012. http://dx.doi.org/10.2172/1048138.

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Zhu, Xiaoyang. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors. Office of Scientific and Technical Information (OSTI), December 2014. http://dx.doi.org/10.2172/1165194.

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Schenter, Gregory K., and Richard L. Liboff. Analytic Distribution for Charge Carriers in a Semiconductor Dominated by Equivalent Intervalley Scattering. Fort Belvoir, VA: Defense Technical Information Center, October 1988. http://dx.doi.org/10.21236/ada202537.

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Zhu, Xiaoyang, and Daniel Frisbie. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors. Office of Scientific and Technical Information (OSTI), March 2017. http://dx.doi.org/10.2172/1351111.

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Evgeniya I., Yudanova, Denison Nikolai N., and Krinichnyi Viktor I. Effect of microadditives on morphology, stability and number of charge carriers in a solar cell based on P3DDT/PC61 BM. Peeref, June 2023. http://dx.doi.org/10.54985/peeref.2306p2837307.

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Lian, Tianquan. Direct Observation of Photoexcited Charge Carrier Dynamics and Electrostatic Fields at Photocatalytic Semiconductor/liquid Interfaces. Office of Scientific and Technical Information (OSTI), September 2021. http://dx.doi.org/10.2172/1914320.

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Maddux, Gary A. Research, Evaluation and Analysis of Design Changes to the MLRS Launcher and Carrier. Fort Belvoir, VA: Defense Technical Information Center, January 2000. http://dx.doi.org/10.21236/ada374618.

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Klopf, John. Ultrafast Carrier Dynamics Measured by the Transient Change in the Reflectance of InP and GaAs Film. Office of Scientific and Technical Information (OSTI), October 2005. http://dx.doi.org/10.2172/920104.

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Dauffy, L., and J. Koch. Charge Carrier Density and signal induced in a CVD diamond detector from NIF DT neutrons, x-rays, and electrons. Office of Scientific and Technical Information (OSTI), October 2005. http://dx.doi.org/10.2172/885389.

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