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Journal articles on the topic 'Charge transfer insulator'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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1

Ōno, Yoshiaki, Tamifusa Matsuura, and Yoshihiro Kuroda. "Kondo Insulator and Charge Transfer Insulator in Lattice Anderson Model." Journal of the Physical Society of Japan 63, no. 4 (April 15, 1994): 1406–21. http://dx.doi.org/10.1143/jpsj.63.1406.

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2

Guo, Wei, and Rushan Han. "From Charge Transfer Type Insulator to Superconductor." International Journal of Modern Physics B 17, no. 18n20 (August 10, 2003): 3347–53. http://dx.doi.org/10.1142/s021797920302096x.

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We propose a microscopic model Hamiltonian to account for impurity doping induced insulator-superconductor transition and the coexistence of antiferromagnetism and superconductivity in the high-Tc cuprates. The crossover from non Fermi liquid to Fermi liquid regime characterized by delocalization of d electrons on Cu sites is discussed.
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3

Nagae, Moichiro. "Charge transfer and coherent charge propagation in metal-insulator junctions." Physical Review B 36, no. 17 (December 15, 1987): 9025–44. http://dx.doi.org/10.1103/physrevb.36.9025.

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4

Saito, Gunzi, and Tsuyoshi Murata. "Mixed valency in organic charge transfer complexes." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1862 (September 10, 2007): 139–50. http://dx.doi.org/10.1098/rsta.2007.2146.

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Mixed-valence (partial charge transfer state) and segregated stacking are the key factors for constructing organic metals. Here, we discuss the ionicity phase diagrams for a variety of charge transfer systems to provide a strategy for the development of functional organic materials (Mott insulator, semiconductor, superconductor, metal, complex isomer, neutral–ionic system, etc.).
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5

Kwon, Choi, Bae, and Park. "Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films." Crystals 9, no. 12 (November 28, 2019): 634. http://dx.doi.org/10.3390/cryst9120634.

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We show that transfer hysteresis for a pentacene thin film transistor (TFT) with a low-temperature solution-processed zirconia (ZrOx) gate insulator can be remarkably reduced by modifying the ZrOx surface with a thin layer of crosslinked poly(4-vinylphenol) (c-PVP). Pentacene TFTs with bare ZrOx and c-PVP stacked ZrOx gate insulators were fabricated, and their hysteresis behaviors compared. The different gate insulators exhibited no significant surface morphology or capacitance differences. The threshold voltage shift magnitude decreased by approximately 71% for the TFT with the c-PVP stacked ZrOx gate insulator compared with the bare ZrOx gate insulator, with 0.75 ± 0.05 and 0.22 ± 0.03 V threshold voltage shifts for the bare ZrOx and c-PVP stacked ZrOx gate insulators, respectively. The hysteresis reduction was attributed to effectively covering hysteresis-inducing charge trapping sites on ZrOx surfaces.
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6

Oleś, Andrzej M., and Marek Kamiński. "Metal–antiferromagnetic insulator transition in the charge-transfer model." Physical Review B 52, no. 21 (December 1, 1995): 15111–14. http://dx.doi.org/10.1103/physrevb.52.15111.

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7

Bang, Y., C. Castellani, M. Grilli, G. Kotliar, R. Raimondi, and Z. Wang. "SINGLE PARTICLE AND OPTICAL GAPS IN CHARGE-TRANSFER INSULATORS." International Journal of Modern Physics B 06, no. 05n06 (March 1992): 531–45. http://dx.doi.org/10.1142/s0217979292000311.

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We analyze the collective excitations near a Mott-Hubbard and a metal charge transfer insulator transition, using the slave boson technique. We show that the Mott transition can be viewed as an excitonic softening, which takes place when the bound state between the lower and upper Hubbard bands reaches zero energy. The exciton energy is related to the jump of the chemical potential at zero doping. In a charge transfer insulator this mode describes a p-d charge fluctuation, i.e. it is a charge transfer exciton. In the single band Hubbard model the excitonic resonance describes virtual transitions between the lower and the upper Hubbard band. Finally we contrast the behaviour of the collective modes near the Mott transition with and near the Charge Transfer Instability. In the former the exciton energy and the charge compressibility go to zero. In the latter the exciton energy remains finite and the charge susceptibility diverges, causing phase separation.
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8

Fischer, Mark H., Si Wu, Michael Lawler, Arun Paramekanti, and Eun-Ah Kim. "Nematic and spin-charge orders driven by hole-doping a charge-transfer insulator." New Journal of Physics 16, no. 9 (September 30, 2014): 093057. http://dx.doi.org/10.1088/1367-2630/16/9/093057.

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9

Zhao, Jianjun, Matthias Wasem, Christopher R. Bradbury, and David J. Fermín. "Charge Transfer across Self-Assembled Nanoscale Metal−Insulator−Metal Heterostructures." Journal of Physical Chemistry C 112, no. 18 (April 15, 2008): 7284–89. http://dx.doi.org/10.1021/jp7101644.

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10

Phillips, J. C. "Charge transfer and superconductor-metal-insulator transitions in high-Tcsuperconductors." Physical Review B 51, no. 21 (June 1, 1995): 15402–6. http://dx.doi.org/10.1103/physrevb.51.15402.

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11

Sun, Jixing, Sibo Song, Xiyu Li, Yunlong Lv, Jiayi Ren, Fan Ding, and Changwang Guo. "Restraining Surface Charge Accumulation and Enhancing Surface Flashover Voltage through Dielectric Coating." Coatings 11, no. 7 (June 22, 2021): 750. http://dx.doi.org/10.3390/coatings11070750.

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A conductive metallic particle in a gas-insulated metal-enclosed system can charge through conduction or induction and move between electrodes or on insulating surfaces, which may lead to breakdown and flashover. The charge on the metallic particle and the charging time vary depending on the spatial electric field intensity, the particle shape, and the electrode surface coating. The charged metallic particle can move between the electrodes under the influence of the spatial electric field, and it can discharge and become electrically conductive when colliding with the electrodes, thus changing its charge. This process and its factors are mainly affected by the coating condition of the colliding electrode. In addition, the interface characteristics affect the particle when it is near the insulator. The charge transition process also changes due to the electric field strength and the particle charging state. This paper explores the impact of the coating material on particle charging characteristics, movement, and discharge. Particle charging, movement, and charge transfer in DC, AC, and superimposed electric fields are summarized. Furthermore, the effects of conductive particles on discharge characteristics are compared between coated and bare electrodes. The reviewed studies demonstrate that the coating can effectively reduce particle charge and thus the probability of discharge. The presented research results can provide theoretical support and data for studying charge transfer theory and design optimization in a gas-insulated system.
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12

Xing, Yunqi, Yixuan Wang, Jiakai Chi, Haoliang Liu, and Jin Li. "Study on Improving Interface Performance of HVDC Composite Insulators by Plasma Etching." Coatings 10, no. 11 (October 27, 2020): 1036. http://dx.doi.org/10.3390/coatings10111036.

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High-voltage direct-current composite insulators are faced with various challenges during operation, such as creeping discharge, umbrella skirt damage, abnormal heating and insulator breakage. Among them, the aging of the interface between the core rod and the sheath is one of the important causes of composite insulator failure. In order to improve the electrical resistance of the composite insulator interface, this study uses plasma etching to modify the surface of the glass-fiber-reinforced epoxy resin plastic to prepare the high-voltage direct-current composite insulator core rod–sheath samples. By analyzing the surface morphology of the epoxy resin, static contact angle and surface charge transfer characteristics, the control mechanism of the plasma etching treatment on the interface bonding performance and leakage current of composite insulator core rod–sheath samples were studied. The results show that proper etching time treatment can improve the trap energy level distribution and microstructure of epoxy resin and increase the discharge voltage along the surface; chemical bonding plasma etching can improve the interfacial bonding performance of core rod–sheath samples sheaths, reduce the leakage current of composite insulator core rod–sheath samples sheath specimens and improve their interfacial performance.
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13

Liu, Jinjia, Tao Yang, Aiju Xu, Richard L. Martin, Yong Yang, Haijun Jiao, Yongwang Li, and Xiao-Dong Wen. "Predication of screened hybrid functional on transition metal monoxides: From Mott insulator to charge transfer insulator." Journal of Alloys and Compounds 808 (November 2019): 151707. http://dx.doi.org/10.1016/j.jallcom.2019.151707.

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14

Chung, Woonki, and J. K. Freericks. "Charge-transfer metal-insulator transitions in the spin-12Falicov-Kimball model." Physical Review B 57, no. 19 (May 15, 1998): 11955–61. http://dx.doi.org/10.1103/physrevb.57.11955.

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15

孔, 龙娟. "Charge-Transfer Metal-Insulator Transitions and Electronic Properties in Vanadium Dioxide." Advances in Condensed Matter Physics 04, no. 04 (2015): 119–27. http://dx.doi.org/10.12677/cmp.2015.44014.

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16

YAKUSHI, KYUYA, MKHITAL SIMONYAN, and YUQIN DING. "Spectroscopic studies of solid phthalocyanines and their charge transfer salts." Journal of Porphyrins and Phthalocyanines 05, no. 01 (January 2001): 13–24. http://dx.doi.org/10.1002/1099-1409(200101)5:1<13::aid-jpp299>3.0.co;2-o.

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We present the polarized reflection spectra of several MPcs ( M ≡ Co , Ni , Cu , Zn , Pb ) in the Q-band region and interpret them based on conventional exciton theory. We compare the polarized reflection spectra of the phthalocyanine radical salts NiPc ( AsF 6)0.5, H 2 Pc ( AsF 6)0.67 and LiPc and interpret the new absorption band near the Q-band using the relationship between the degree of oxidation and the intensity of this new band. Based on the pressure dependence of this new band and the diagnostic phonon modes, we prove a pressure-induced charge transfer in NiPc ( AsF 6)0.5. A metal–insulator phase transition is predicted from the analysis of the plasmon absorption and is confirmed by the high-pressure electrical resistivity. We propose the origin of the pressure-induced charge transfer and the mechanism of the metal–insulator transition. We find the optical transition associated with the 3 d z2 band in the reflection spectrum of CoPc ( AsF 6)0.5, which is proved by comparison with the mixed crystals Co x Ni 1 − x Pc ( AsF 6)0.5. A new weak intermolecular optical transition is found through the resonance enhancement of a local phonon in the mixed crystals Co x Ni 1 − x Pc ( AsF 6)0.5.
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17

Aliaj, I., A. Sambri, V. Miseikis, D. Stornaiuolo, E. di Gennaro, C. Coletti, V. Pellegrini, F. Miletto Granozio, and S. Roddaro. "Probing charge transfer during metal-insulator transitions in graphene-LaAlO3/SrTiO3 systems." APL Materials 6, no. 6 (June 2018): 066103. http://dx.doi.org/10.1063/1.5026912.

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18

Zhang, Xiaoli, Ting Jia, Ting Liu, Zhi Zeng, and H. Q. Lin. "The strong quasi-one-dimensional antiferromagnetism in a charge-transfer insulator: AgSO4." Journal of Applied Physics 111, no. 7 (April 2012): 07E136. http://dx.doi.org/10.1063/1.3677796.

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19

Rawat, Ritu, Anupam Jana, Gyanendra Panchal, Sourav Chowdhury, R. J. Choudhary, and D. M. Phase. "Temperature driven Mott-Hubbard to charge-transfer insulator transition in hexagonal Sr0.6Ba0.4MnO3." Applied Physics Letters 115, no. 10 (September 2, 2019): 102905. http://dx.doi.org/10.1063/1.5113570.

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20

Liu, Junfang, Die Su, Li Liu, Zhixiao Liu, Su Nie, Yue Zhang, Jing Xia, Huiqiu Deng, and Xianyou Wang. "Boosting the charge transfer of Li2TiSiO5 using nitrogen-doped carbon nanofibers: towards high-rate, long-life lithium-ion batteries." Nanoscale 12, no. 38 (2020): 19702–10. http://dx.doi.org/10.1039/d0nr04618c.

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The nitrogen-doped carbon encapsulated Li2TiSiO5 (the insulator for transferring electrons by first-principles calculation) nanofibers were fabricated. And unexpectedly, it can boost the charge transfer effectively.
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21

Delmonte, Davide, Francesco Mezzadri, Fabio Orlandi, Gianluca Calestani, Yehezkel Amiel, and Edmondo Gilioli. "High Pressure Induced Insulator-to-Semimetal Transition through Intersite Charge Transfer in NaMn7O12." Crystals 8, no. 2 (February 3, 2018): 81. http://dx.doi.org/10.3390/cryst8020081.

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22

Hofmann, Oliver T., Patrick Rinke, Matthias Scheffler, and Georg Heimel. "Integer versus Fractional Charge Transfer at Metal(/Insulator)/Organic Interfaces: Cu(/NaCl)/TCNE." ACS Nano 9, no. 5 (April 30, 2015): 5391–404. http://dx.doi.org/10.1021/acsnano.5b01164.

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23

Budakian, R., and S. J. Putterman. "Correlation between Charge Transfer and Stick-Slip Friction at a Metal-Insulator Interface." Physical Review Letters 85, no. 5 (July 31, 2000): 1000–1003. http://dx.doi.org/10.1103/physrevlett.85.1000.

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24

Xiong, Shijie. "Spin bonds in an insulator with both charge-transfer and Hubbard-Mott gaps." Journal of Physics: Condensed Matter 4, no. 27 (July 6, 1992): 5989–96. http://dx.doi.org/10.1088/0953-8984/4/27/016.

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25

Yoneyama, Naoki, Akira Miyazaki, Toshiaki Enoki, and Gunzi Saito. "Magnetic Properties of TTF-Type Charge Transfer Salts in the Mott Insulator Regime." Bulletin of the Chemical Society of Japan 72, no. 4 (April 1999): 639–51. http://dx.doi.org/10.1246/bcsj.72.639.

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26

Tanaka, Yuya, Kohei Yamamoto, Yutaka Noguchi, and Hisao Ishii. "Degradation Process in Pentacene-Based Organic Field-Effect Transistors Evaluated by Three-Terminal Capacitance-Voltage Measurements." MRS Advances 2, no. 23 (2017): 1267–72. http://dx.doi.org/10.1557/adv.2017.225.

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ABSTRACTBy taking advantage of three-terminal capacitance-voltage (TT-CV) measurement, we investigated a formation of trapped charge in pentacene(Pn)-based organic field-effect transistors (OFETs) during the bias stress measurement. The shift of the turn-on voltage in transfer curve correlated well with the increase of trapped charge estimated from TT-CV curves. Moreover, TT-CV measurement revealed that the trapped charges were distributed inhomogeneously at the vicinity of the pentacene/insulator interface, indicating that the current does not obviously affect their formation. Thus we suggested that the trapped charges are formed by keeping Pn molecules as unstable cation (hole state) by the prolonged bias stress.
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27

Kumai, R. "Current-Induced Insulator-Metal Transition and Pattern Formation in an Organic Charge-Transfer Complex." Science 284, no. 5420 (June 4, 1999): 1645–47. http://dx.doi.org/10.1126/science.284.5420.1645.

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28

Vikhnin, V. S., S. Lysenko, A. Rua, F. Fernandez, and H. Liu. "Charge transfer model of metal–insulator phase transition and ultrafast optical response in VO2." Optical Materials 29, no. 11 (July 2007): 1385–89. http://dx.doi.org/10.1016/j.optmat.2006.04.018.

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29

Wu, Hao, Yong-Hui Zhou, Yi-Fang Yuan, Chun-Hua Chen, Ying Zhou, Bo-Wen Zhang, Xu-Liang Chen, et al. "Pressure-Induced Metallization Accompanied by Elongated S–S Dimer in Charge Transfer Insulator NiS2 *." Chinese Physics Letters 36, no. 10 (October 2019): 107101. http://dx.doi.org/10.1088/0256-307x/36/10/107101.

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30

Claiser, N., B. Arnaud, G. Roger, L. Toupet, T. Roisnel, A. Ota, H. Yamochi, G. Saito, and P. Rabiller. "Intra- and inter-molecular charge transfer in metal–insulator switching compound (EDO-TTF)2PF6." Acta Crystallographica Section A Foundations of Crystallography 60, a1 (August 26, 2004): s179. http://dx.doi.org/10.1107/s010876730409645x.

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31

PIAMONTEZE, CÍNTHIA, HÉLIO C. N. TOLENTINO, FLÁVIO C. VICENTIN, ALINE Y. RAMOS, NESTOR E. MASSA, JOSE A. ALONSO, MARIA J. MARTINEZ-LOPE, and M. T. CASAIS. "ELECTRONIC CHANGES RELATED TO THE METAL-TO-INSULATOR PHASE TRANSITION IN RNiO3." Surface Review and Letters 09, no. 02 (April 2002): 1121–25. http://dx.doi.org/10.1142/s0218625x02003615.

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Rare earth nickel oxide perovskites (R NiO 3, R=rare earth) have, except for LaNiO 3, a metal–insulator (MI) phase transition as temperature decreases. The transition temperature (T MI ) increases as the R-ion becomes smaller. They present also, at low temperatures, a complex antiferromagnetic order. For lighter R-ions (e.g. Pr and Nd), the antiferromagnetic transition temperature (T N ) is close to T MI , while for heavier R-ions (e.g. Eu, Sm), T MI and T N are very far apart, suggesting that the magnetic and electronic behaviors are not directly coupled. Although R NiO 3 perovskites are placed in the boundary of the Mott–Hubbard and charge transfer regimes, there are several evidences pointing to a charge transfer gap, mainly controlled by ligand-to-metal charge transfer energy, and thus strongly dependent on hybridization. Ni L-edge absorption spectroscopy (transition 2p → 3d) gives direct information on the density of Ni 3d empty states, and in particular on the multiplet splitting and hybridization between Ni 3d and O 2p bands. Here we present Ni L3 and L2 absorption spectra measured for NdNiO 3 and EuNiO 3 (T MI = 200 and 480 K). At room temperature, dramatic differences are observed between EuNiO 3 (insulating) and NdNiO 3 (metallic). The normalized spectra give evidence for a higher density of 3d unoccupied states and a larger multiplet splitting in EuNiO 3. Both effects might be correlated to a decrease in hybridization. The same behavior is observed for NdNiO 3 as it is cooled down to the insulating phase (T < 200 K), revealing that in these compounds the opening of the gap is directly related to the degree of hybridization.
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32

Hofmann, Oliver T., Patrick Rinke, Matthias Scheffler, and Georg Heimel. "Correction to Integer versus Fractional Charge Transfer at Metal(/Insulator)/Organic Interfaces: Cu(/NaCl)/TCNE." ACS Nano 9, no. 8 (July 30, 2015): 8637. http://dx.doi.org/10.1021/acsnano.5b04655.

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33

Dräger, G., W. Czolbe, and J. A. Leiro. "High-energy-spectroscopy studies of a charge-transfer insulator: X-ray spectra of α-Fe2O3." Physical Review B 45, no. 15 (April 15, 1992): 8283–87. http://dx.doi.org/10.1103/physrevb.45.8283.

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34

Feng, Na, De Tian Li, Sheng Sheng Yang, Yi Feng Chen, Dao Tang Tang, and Chen Xuan Zhao. "Study of Secondary Electron Emission Depended on Surface Charge of Space Insulator Materials." Applied Mechanics and Materials 716-717 (December 2014): 137–41. http://dx.doi.org/10.4028/www.scientific.net/amm.716-717.137.

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Secondary electron emission (SEE) processes play an essential role in spacecraft surface charging. It is difficult to study SEE of insulator whose surface cumulates charges by incident electron bombardment because of poor conductivity. This paper investigated the theoretical process of generation, transfer and escape of secondary electrons, and finally the paper presented a mathematical model to calculate the secondary electron emission. We also have improved measurement system to measure total SEE coefficient from dielectric with 1-5 keV electron irradiation which is perfectly fit to mathematical model, and the SEE coefficient with different surface charging is investigated. The results indicate the SEE coefficient decreases with positive charging and increase with negative charging of dielectric surface.
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35

Drechsler, S. L., J. Málek, R. Hayn, M. Knupfer, A. S. Moskvin, and J. Fink. "Low-Energy Charge Excitations in an Undoped Cuprate: Description Beyond the Standard pdσ-Model?" International Journal of Modern Physics B 17, no. 18n20 (August 10, 2003): 3324–28. http://dx.doi.org/10.1142/s0217979203021745.

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Within a joint experimental and theoretical study the density-density response of the prototypical linear chain compound Sr 2 CuO 3 has been investigated by means of polarization and momentum dependent electron energy loss spectroscopy (EELS) and exact diagonalizations including also the continued fraction technique for the determination of spectral densities such as the optical conductivity and the loss function, respectively. It has been shown that the lowest charge excitations of this 1D charge transfer insulator cannot be described properly within the usual pdσ-model for cuprates which is based on the Cu 3dx2-y2 and the corresponding O 2pσ states, only. The lowest energy charge excitations are dominated by O 2pπ final states within the CuO 4 plaquette plane. A detailed analysis of the EELS-data allows a classification into two types of charge transfer excitations with predominant π and σ character and various sizes of internal localization and dispersion.
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36

Obradors, X., L. M. Paulius, M. B. Maple, J. B. Torrance, A. I. Nazzal, J. Fontcuberta, and X. Granados. "Pressure dependence of the metal-insulator transition in the charge-transfer oxidesRNiO3(R=Pr,Nd,Nd0.7La0.3)." Physical Review B 47, no. 18 (May 1, 1993): 12353–56. http://dx.doi.org/10.1103/physrevb.47.12353.

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37

Canfield, P. C., J. D. Thompson, S.-W. Cheong, and L. W. Rupp. "Extraordinary pressure dependence of the metal-to-insulator transition in the charge-transfer compounds NdNiO3and PrNiO3." Physical Review B 47, no. 18 (May 1, 1993): 12357–60. http://dx.doi.org/10.1103/physrevb.47.12357.

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38

Berashevich, Yu A., A. L. Danilyuk, and V. E. Borisenko. "Resonance transfer of charge carriers in Si/CaF2 periodic nanostructures via trap states in insulator layers." Semiconductors 36, no. 6 (June 2002): 679–84. http://dx.doi.org/10.1134/1.1485670.

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39

Feng, J., Wei Pan, B. Xiao, Rui Fen Wu, Chun Lei Wan, Jing Chao Chen, and R. Zhou. "First Principle Study of the Electronic Structure of Gd2SrAl2O7." Key Engineering Materials 434-435 (March 2010): 448–50. http://dx.doi.org/10.4028/www.scientific.net/kem.434-435.448.

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The ground state electronic structure of Gd2SrAl2O7 are calculated using first principles, we found that only the Density functional theory (DFT) + U can correctly describe the Gd2SrAl2O7 as a charge-transfer type insulator. Gd-O and Al-O bonds have strong covalent character and Sr-O is a perfect ionic bond. The band gap of Gd2SrAl2O7is 3.9 eV, and it is opened due the large U correction for 4f orbit.
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40

ASOKAMANI, R., CH U. M. TRINADH, G. PARI, and S. NATARAJAN. "INSULATOR-TO-METAL TRANSITION IN LaRhO3 UNDER HIGH PRESSURE." Modern Physics Letters B 09, no. 11n12 (May 20, 1995): 701–9. http://dx.doi.org/10.1142/s0217984995000644.

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The band structure calculations of perovskite transition metal compound LaRhO 3 performed using 'tight binding linear muffin tin orbital' (TB-LMTO) method within local density approximation (LDA) under ambient and high pressures are reported here. Our calculations are able to successfully explain the insulating nature of the system and the insulator-to-metal transition (IMT) is observed for the reduced volume of 0.90. The first electronic structure calculation reported here for LaRhO 3 enables us to compare it with that of LaCoO 3 which brings out the role played by the d bands. These studies lead to distinguish between these two insulating systems and LaCoO 3 is found to be a charge transfer (CT) insulator which is in agreement with the recent experimental observations whereas LaRhO 3 is a conventional band insulator. Further, the equilibrium lattice constant, bulk modulus, its first derivative, and metallization volume obtained from the total energy calculations for expanded and reduced cell volumes are also reported for LaRhO 3.
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41

Menshchikova, Tatiana V., Sergey V. Eremeev, Vladimir M. Kuznetsov, and Evgueni V. Chulkov. "Interplay of Topological States on TI/TCI Interfaces." Materials 13, no. 20 (October 10, 2020): 4481. http://dx.doi.org/10.3390/ma13204481.

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Based on first-principles calculations, we study electronic structure of interfaces between a Z2 topological insulator (TI) SnBi2Te4 and a topological crystalline insulator (TCI) SnTe. We consider two interface models characterized by the different atomic structure on the contact of the SnTe(111) and SnBi2Te4(0001) slabs: the model when two materials are connected without intermixing (abrupt type of interface) and the interface model predicted to be realized at epitaxial immersion growth on topological insulator substrates (smooth interface). We find that a strong potential gradient at the abrupt interface leads to the redistribution of the topological states deeper from the interface plane which prevents the annihilation of the Γ¯ Dirac states, predicted earlier. In contrast, a smooth interface is characterized by minor charge transfer, which promotes the strong interplay between TI and TCI Γ¯ Dirac cones leading to their complete annihilation.The M¯ topologically protected Dirac state of SnTe(111) survives irrespective of the interface structure.
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42

Shakin, Aleksandr, Denis Abashev, Dmitry Shulyatev, Roman Privezentsev, Nikolay Andreev, and Yakov Mukovskii. "Pressure Effects on Transport Properties of (La0.85Sr0.15)yMnO3 Single Crystals." Solid State Phenomena 233-234 (July 2015): 273–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.233-234.273.

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We have studied single crystals with same La/Sr ratio but different initial Mn concentration, namely (La0.85Sr0.15)0.93MnO3and (La0.85Sr0.15)0.97MnO3. We have observed, that the temperature of insulator-metal transition TIMincreases for both samples and the temperature of charge ordering TCOincreases for (La0.85Sr0.15)0.93MnO3and decreases for (La0.85Sr0.15)0.97MnO3with the external hydrostatic pressure in the range of 0.1 MPa - 1.3 GPa. After analysis of obtained dependence, we have concluded that (La0.85Sr0.15)0.97MnO3sample has higher concentration of Mn vacancy. Thereby we suppose that growth of Mn vacancy concentration decreases transfer interaction of the conducting electrons and enhances charge ordering of Mn3+and Mn4+ions.
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43

Kotliar, G. "Strong Correlation Transport and Coherence." International Journal of Modern Physics B 05, no. 01n02 (January 1991): 341–52. http://dx.doi.org/10.1142/s0217979291000213.

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We discuss the notion of fermi liquid coherence in the different regimes of the Anderson lattice. For finite doping heavy fermion (HF) behaviour results when the kondo exchange energy JK is smaller than the oxygen oxygen overlap tpp. High temperature superconductors (HTS) are in the opposite regime (JK≫tpp). Doping the charge transfer insulator state introduces Zhang Rice singlet like states in the gap. These states, at zero temperature, continuously evolve into Kondo resonances as tpp is increased. The mechanism for destruction of coherence, at finite temperatures, is qualitatively different in the HF and the HTS regime. We study the temperature dependence of the transport coefficients when the charge transfer gap is large, in the temperature regime T≫Tcoh. We discuss our results in connection with the anomalous properties of the copper oxides.
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44

Park, Joong-Hyun, Myung-Hun Shin, and Jun-Sin Yi. "The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide." Nanomaterials 9, no. 5 (May 22, 2019): 784. http://dx.doi.org/10.3390/nano9050784.

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We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium–tin–zinc–oxide (ITZO) as an active channel layer and multi-oxide structure of SiO2 (blocking layer)/Si-rich SiOX (charge trapping layer)/SiOXNY (tunneling layer) as a gate insulator. The insulators were deposited using inductive coupled plasma chemical vapor deposition, and during the deposition, the trap states of the Si-rich SiOx charge trapping layer could be controlled to widen the memory window with the gas ratio (GR) of SiH4:N2O, which was confirmed by fourier transform infrared spectroscopy (FT-IR). We fabricated the metal–insulator–silicon (MIS) capacitors of the insulator structures on n-type Si substrate and demonstrated that the hysteresis capacitive curves of the MIS capacitors were a function of sweep voltage and trap density (or GR). At the GR6 (SiH4:N2O = 30:5), the MIS capacitor exhibited the widest memory window; the flat band voltage (ΔVFB) shifts of 4.45 V was obtained at the sweep voltage of ±11 V for 10 s, and it was expected to maintain ~71% of the initial value after 10 years. Using the Si-rich SiOX charge trapping layer deposited at the GR6 condition, we fabricated a bottom gate ITZO NVM TFT showing excellent drain current to gate voltage transfer characteristics. The field-effect mobility of 27.2 cm2/Vs, threshold voltage of 0.15 V, subthreshold swing of 0.17 V/dec, and on/off current ratio of 7.57 × 107 were obtained at the initial sweep of the devices. As an NVM, ΔVFB was shifted by 2.08 V in the programing mode with a positive gate voltage pulse of 11 V and 1 μs. The ΔVFB was returned to the pristine condition with a negative voltage pulse of −1 V and 1 μs under a 400–700 nm light illumination of ~10 mWcm−2 in erasing mode, when the light excites the electrons to escape from the charge trapping layer. Using this operation condition, ~90% (1.87 V) of initial ΔVFB (2.08 V) was expected to be retained over 10 years. The developed transparent NVM using Si-rich SiOx and ITZO can be a promising candidate for future display devices integrating logic devices on panels.
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45

Borisov, A. A., V. A. Gavrichkov, and S. G. Ovchinnikov. "Doping Dependence of the Band Structure and Chemical Potential in Cuprates by the Generalized Tight-Binding Method." Modern Physics Letters B 17, no. 10n12 (May 20, 2003): 479–86. http://dx.doi.org/10.1142/s0217984903005500.

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Quasiparticle band structure in hole doped CuO2 layer is calculated with account for strong electron correlations in the framework of multiband p–d model. For undoped layer we obtain the charge-transfer antiferromagnetic insulator. With doping unusual impurity-like quasiparticle appears at the top of the valence band with spectral weight proportional to doping concentration. In the overdoped regime the band structure in the paramagnetic phase results in the doping dependent Fermi surface in agreement to ARPES data.
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46

Tanabe, Yoichi, Khuong Kim Huynh, Ryo Nouchi, Satoshi Heguri, Gang Mu, Jingtao Xu, Hidekazu Shimotani, and Katsumi Tanigaki. "Electron and Hole Injection via Charge Transfer at the Topological Insulator Bi2–xSbxTe3–ySey–Organic Molecule Interface." Journal of Physical Chemistry C 118, no. 7 (February 5, 2014): 3533–38. http://dx.doi.org/10.1021/jp409715s.

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47

Kijima-Aoki, Hanae, Yang Cao, Nobukiyo Kobayashi, Saburo Takahashi, Shigehiro Ohnuma, and Hiroshi Masumoto. "Large magnetodielectric effect based on spin-dependent charge transfer in metal–insulator type Co-(BaF2) nanogranular films." Journal of Applied Physics 128, no. 13 (October 7, 2020): 133904. http://dx.doi.org/10.1063/5.0021636.

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48

Ruan, Yurong, Lu Huang, Yanmin Yang, Guigui Xu, Kehua Zhong, Zhigao Huang, and Jian-Min Zhang. "Robustness of the electronic structure and charge transfer in topological insulator Bi2Te2Se and Bi2Se2Te thin films under an external electric field." Physical Chemistry Chemical Physics 22, no. 7 (2020): 3867–74. http://dx.doi.org/10.1039/c9cp06206h.

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49

Wang, Xiang, Song Chao, Yan Qing Guo, Jie Song, and Rui Huang. "Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure." Key Engineering Materials 531-532 (December 2012): 547–50. http://dx.doi.org/10.4028/www.scientific.net/kem.531-532.547.

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Stack nanocrystalline-Si (nc-Si) based metal insulator semiconductor memory structure was fabricated by plasma enhanced chemical vapor deposition. The doubly stacked layers of nc-Si with the thickness of about 5 nm were fabricated by the layer-by-layer deposition technique with silane and hydrogen mixture gas. Capacitance-Voltage (C-V) measurements were used to investigate electron tunnel and storage characteristic. Abnormal capacitance hysteresis phenomena are obtained. The C-V results show that the flatband voltage increases at first, then decreases and finally increases, exhibiting a clear deep at gate voltage of 9 V. The charge transfer effect model was put forward to explain the electron storage and discharging mechanism of the stacked nc-Si based memory structure. The decreasing of flatband voltage at moderate programming bias is attributed to the transfer of electrons from the lower nc-Si layer to the upper nc-Si layer.
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50

Akutsu, Hiroki, Yuta Koyama, Scott S. Turner, Keigo Furuta, and Yasuhiro Nakazawa. "Structures and Properties of New Organic Conductors: BEDT-TTF, BEST and BETS Salts of the HOC2H4SO3− Anion." Crystals 10, no. 9 (September 1, 2020): 775. http://dx.doi.org/10.3390/cryst10090775.

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New bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF)-, bis(ethylenediseleno)tetrathiafulvalene (BEST)- and bis(ethylenedithio)tetraselenafulvalene (BETS)-based organic charge-transfer (CT) salts—α-(BEDT-TTF)3(HOC2H4SO3)2 (1), β-(BEST)3(HOC2H4SO3)2·H2O (2) and α-(BETS)2(HOC2H4SO3)·H2O (3)—have been prepared. Salts 1 and 2 show semiconducting behaviour. Salt 3, which is almost isostructural to α-(BETS)2I3, shows metallic behaviour down to 70 K and then shows a broader metal–insulator transition than that of α-(BETS)2I3. The reason for the difference in behaviour is estimated by the comparison of the Madelung energies of the full set of patterns of possible donor’s charge-ordered and anion’s disordered states.
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