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Relevant bibliographies by topics / Chemical mechanical planarization (CMP)

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Academic literature on the topic 'Chemical mechanical planarization (CMP)'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Chemical mechanical planarization (CMP)"

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Singh, Rajiv K., and Rajeev Bajaj. "Advances in Chemical-Mechanical Planarization." MRS Bulletin 27, no. 10 (October 2002): 743–51. http://dx.doi.org/10.1557/mrs2002.244.

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AbstractThe primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer–pad–slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

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Kim, Hojoong, Andy Kim, and Tae Sung Kim. "Investigation of Correlation between Polishing Characteristic and Pad Roughness during Chemical Mechanical Planarization Process." Advanced Materials Research 488-489 (March 2012): 831–35. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.831.

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The Chemical mechanical planarization (CMP) process has become a primary planarization technique required for the manufacture of advanced integrated circuit (IC) devices. As the feature size of IC chips shrinks down to 65 nm and below, the role of CMP as a robust planarization process becomes increasingly important. In this work, we evaluated surface roughness of CMP pad to correlate the roughness with CMP performance such as material removal rate (MRR) and pad lifetime. Pad surface was analyzed by 3-dimensional profiler and scanning electron microscope (SEM). We found that MRR could be varied with the pad life time and roughness. We also found that suitable roughness range is exist to get stable CMP performance. Finally, we introduced ‘pre-conditioning’ method to manage the roughness of CMP pad to get stable CMP performance at the initial pad life time.

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Park, Seonghyun, and Hyunseop Lee. "Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper." Applied Sciences 11, no. 16 (August 5, 2021): 7232. http://dx.doi.org/10.3390/app11167232.

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Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles. With the increasing integration of semiconductor devices, the CMP process is gaining increasing importance in semiconductor manufacturing. Abrasive-free CMP (AF-CMP) uses chemical solutions that do not contain abrasive particles to reduce scratches and improve planarization capabilities. However, because AF-CMP does not use abrasive particles for mechanical material removal, the material removal rate (MRR) is lower than that of conventional CMP methods. In this study, we attempted to improve the material removal efficiency of AF-CMP using electrolytic ionization of a chemical solution (electrolytically ionized abrasive-free CMP; EAF-CMP). EAF-CMP had a higher MRR than AF-CMP, possibly due to the high chemical reactivity and mechanical material removal of the former. In EAF-CMP, the addition of hydrogen peroxide (H2O2) and citric acid increased the MRR, while the addition of benzotriazole (BTA) lowered this rate. The results highlight the need for studies on diverse chemical solutions and material removal mechanisms in the future.

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Zhang, Liming, Srini Raghavan, and Milind Weling. "Minimization of chemical-mechanical planarization (CMP) defects and post-CMP cleaning." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 5 (1999): 2248. http://dx.doi.org/10.1116/1.590901.

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Li, Jing, Xin Chun Lu, and Zong Bo Zhang. "Inhibition Mechanism of Benzotriazole in Copper Chemical Mechanical Planarization." Applied Mechanics and Materials 607 (July 2014): 74–78. http://dx.doi.org/10.4028/www.scientific.net/amm.607.74.

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During the process of chemical mechanical planarization (CMP) of copper, benzotriazole (BTA) is the most commonly used inhibitor in the slurry. Though the corrosion inhibition mechanism has been studied widely, the mechanism of BTA layer on copper surface in CMP slurries should be further investigated. In this paper, the adsorption mechanisms of BTA were studied by static corrosion tests. Besides, the surface composition was measured by XPS. Combining with CMP experiments, the material removal mechanism of copper CMP depending on pH values was investigated. It was found that the formation of passive film, consisting of Cu-BTA complex, adsorption of BTA and copper oxides, played a dominant role under acidic conditions. While the surface film composed of adsorption layer of BTA and copper oxides under alkaline conditions. The inhibition mechanism of BTA varied with pH values, resulted in corresponding changes of material removal rate and coefficients of friction.

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Seo, Jihoon. "A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization." Journal of Materials Research 36, no. 1 (January 15, 2021): 235–57. http://dx.doi.org/10.1557/s43578-020-00060-x.

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AbstractAs the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical mechanical planarization (CMP) technology has grown by leaps and bounds over the past several decades. There has been a growing interest in understanding the fundamental science and technology of CMP, which has continued to lag behind advances in technology. This review paper provides a comprehensive overview of various chemical and mechanical phenomena such as contact mechanics, lubrication models, chemical reaction that occur between slurry components and films being polished, electrochemical reactions, adsorption behavior and mechanism, temperature effects, and the complex interactions occurring at the wafer interface during polishing. It also provides important insights into new strategies and novel concepts for next‐generation CMP slurries. Finally, the challenges and future research directions related to the chemical and mechanical process and slurry chemistry are highlighted.

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Karimi, Sarah, Meiline Troeung, Ruhung Wang, Rockford Draper, and Paul Pantano. "Acute and chronic toxicity of metal oxide nanoparticles in chemical mechanical planarization slurries with Daphnia magna." Environmental Science: Nano 5, no. 7 (2018): 1670–84. http://dx.doi.org/10.1039/c7en01079f.

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Chen, Yang, Ailian Chen, and Jiawei Qin. "Polystyrene core–silica shell composite particles: effect of mesoporous shell structures on oxide CMP and mechanical stability." RSC Advances 7, no. 11 (2017): 6548–58. http://dx.doi.org/10.1039/c6ra26437a.

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Organic/inorganic composite particles with a core–shell structure exhibit potential applications in chemical mechanical polishing/planarization (CMP) for mechanically challenging materials (copper and low-k dielectrics etc.).

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Yang, Xiang Dong, Xin Wei, Xiao Zhu Xie, and Zhuo Chen. "Development of Theory Model in Chemical Mechanical Polishing." Advanced Materials Research 403-408 (November 2011): 767–71. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.767.

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Chemical mechanical polishing (hereinafter referred to as CMP) which is to provide the best global planarization technology has been researched and applied in the field of ultra-precision surface finish. This article outlines the principles of the CMP process, focusing on the development of the major theoretical models such as phenomenological model, contact mechanics model, fluid dynamics model and hybrid model based contact mechanics and fluid dynamics in chemical mechanical polishing process. The hybrid model based contact mechanics and fluid dynamics has been a good developed in recent years. The model based on the molecular / atomic scale is proposed the further research methods of CMP's theoretical model.

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Si, Li Na, and Guo Xin Xie. "Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process." Applied Mechanics and Materials 665 (October 2014): 132–35. http://dx.doi.org/10.4028/www.scientific.net/amm.665.132.

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Chemical mechanical polishing (CMP) is currently the unique technology of ultra-fine surface machining for global planarization in the process of ultra-large-scale integration (ULSI) of multi-layer copper interconnects. Molecular modeling has been demonstrated to be an effective tool to simulate the CMP process, which usually takes place on the nanoscale. Here, recent important progresses on the molecular dynamics simulation investigation into the material removal mechanisms and the roles of particles in the CMP processes are shown. The mechanical effects on the material removal during the CMP process are discussed. Finally, a short summary and future outlook towards this direction will be given.

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Dissertations / Theses on the topic "Chemical mechanical planarization (CMP)"

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Gopal, Tanuja Danie. "Colloidal aspects of chemical mechanical planarization (CMP) /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2004. http://wwwlib.umi.com/cr/ucsd/fullcit?p3138831.

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Lowalekar, Viral Pradeep. "Oxalic Acid Based Chemical Systems for Electrochemical Mechanical Planarization of Copper." Diss., The University of Arizona, 2006. http://hdl.handle.net/10150/193886.

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In an ECMP process, a wafer is anodically baised during polishing. The electrical potential is the driving force to oxidize copper metal to ions. Copper ions then react with chemistry in the electrolyte to go in solution or form a passivation layer on the surface. The passivation layer is removed by a very low downforce (0.5-1 psi), causing copper to electrochemically dissolve in solution. Passive film formation during copper ECMP is key to the success of this process, since passivation reduces dissolution in the recessed areas, while elevations on the copper surface in direct contact with the ECMP pad are electrochemically planarized. If no passive film forms, then copper removal will be conformal from the elevated and recessed areas, and planarity will be lost. Chemical formulations for the electrochemical mechanical planarization (ECMP) of copper must contain constituents that are stable at anodic potentials. A key component of the formulation is a corrosion inhibitor, which is required to protect low lying areas while higher areas are selectively removed. Organic compounds, which adsorb on copper at low overpotentials and form a film by oxidation at higher overpotentials, may be particularly useful for ECMP. The main goal of the research reported in this dissertation is to understand and develop oxalic acid-based chemical systems suitable for ECMP of copper through electrochemical and surface investigations. Special attention was paid to the development of an inhibitor, which can function under applied potential conditions. Physical methods such as profilometry and four point probe were used to obtain copper removal rates. An organic compound, thiosalicylic acid (TSA), was identified and tested as a potential corrosion inhibitor for copper. TSA offers better protection than the conventionally used benzotriazole (BTA) by oxidizing at high anodic potentials to form a passive film on the copper surface. The passive film formed on the copper surface by addition of TSA was characterized by X-ray photoelectron spectroscopy. The oxidation potential of TSA was characterized using cyclic voltammetry. The passivation and repassivation kinetics was investigated in detail and a passivation mechanism of copper in oxalic acid in the presence of TSA is proposed. Copper removal experiments were performed on a specially designed electrochemical abrasion cell (EC-AC) in both the presence and absence of inhibitors. The effect of anodic potentials on the dissolution of copper was studied to identify suitable conditions for the electro-chemical mechanical planarization process.

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Mudhivarthi, Subrahmanya R. "Process optimization and consumable development for Chemical Mechanical Planarization (CMP) processes." [Tampa, Fla.] : University of South Florida, 2007. http://purl.fcla.edu/usf/dc/et/SFE0002288.

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Philipossian, Ara, Yasa Sampurno, and Lauren Peckler. "Chemical Mechanical Planarization and Old Italian Violins." MDPI AG, 2018. http://hdl.handle.net/10150/627056.

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Previous studies have shown that spectral analysis based on force data can elucidate fundamental physical phenomena during chemical mechanical planarization (CMP). While it has not been literally described elsewhere, such analysis was partly motivated by modern violinmakers and physicists studying Old Italian violins, who were trying to discover spectral relations to sound quality. In this paper, we draw parallels between violins and CMP as far as functionality and spectral characteristics are concerned. Inspired by the de facto standard of violin testing via hammer strikes on the base edge of a violin's bridge, we introduce for the first time, a mobility plot for the polisher by striking the wafer carrier head of a CMP polisher with a hammer. Results show three independent peaks that can indeed be attributed to the polisher's natural resonance. Extending our study to an actual CMP process, similar to hammered and bowed violin tests, at lower frequencies the hammered and polished mobility peaks are somewhat aligned. At higher frequencies, peak alignment becomes less obvious and the peaks become more isolated and defined in the case of the polished wafer spectrum. Lastly, we introduce another parameter from violin testing known as directivity, , which in our case, we define as the ratio of shear force variance to normal force variance acquired during CMP. Results shows that under identical polishing conditions, increases with the polishing removal rate.

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Johnson, Joy Marie. "Slurry abrasive particle agglomeration experimentation and modeling for chemical mechanical planarization (CMP)." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99832.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2015.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 177-188).
A theoretical modeling approach is developed to predict silica-specific instability in chemical-mechanical polishing (CMP) slurries. In CMP, the formation of large agglomerates is of great concern, as these large particles are associated with high defectivity and poor polishing performance. The proposed model describes the complex CMP slurry system as a colloid under high non-linear shear conditions. The model diverges from the classic colloidal models by focusing on the following: reaction limited agglomeration (RLA) bounded by silica-specific modes of transitory bonding, and modified DVLO assumptions to include chemical activation and hydrodynamic agglomerate break-up condition evaluation. In order to build physical intuition and predict key model parameters, fundamental studies and novel metrology of agglomerates is performed.
by Joy Marie Johnson.
Ph. D.

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Luo, Ying. "SLURRY CHEMISTRY EFFECTS ON COPPER CHEMICAL MECHANICAL PLANARIZATION." Master's thesis, University of Central Florida, 2004. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4470.

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Chemical-mechanical Planarization (CMP) has emerged as one of the fastest-growing processes in the semiconductor manufacturing industry, and it is expected to show equally explosive growth in the future (Braun, 2001). The development of CMP has been fueled by the introduction of copper interconnects in microelectronic devices. Other novel applications of CMP include the fabrications of microelectromechanical systems (MEMS), advanced displays, three dimensional systems, and so on (Evans, 2002). CMP is expected to play a key role in the next-generation micro- and nanofabrication technologies (Singh, et al., 2002). Despite the rapid increase in CMP applications, the fundamental understanding of the CMP process has been lacking, particularly the understanding of the wafer-slurry-pad interactions that occur during the CMP process. Novel applications of CMP are expected to expand to materials that are complex chemically and fragile mechanically. Thus, fundamental understanding and improvement of slurry design for CMP is the key to the development of sophisticated next-generation CMP processes. Slurry performance for CMP can be determined by several output parameters including removal rate, global planarity, surface topography, and surface defectivity. To achieve global planarity, it is essential to form a very thin passivating surface layer (<2 nm) that is subsequently removed by the mechanical component of the slurry (Kaufman et al., 1991) or by combined chemo-mechanical effects (Tamboli, 2000). Chemical additives like hydrogen peroxide (H?O?), potassium ferricyanide, and ferric chloride are added to slurries as oxidizers in order to form a desirable surface layer. Other chemical additives such as inhibitors (e.g. benzotriazole) and complexing agents (e.g. ammonia) are added to the copper slurry in order to modify the oxide layer. That the removal rate of the thin surface layer is greater at the highest regions of the wafer surface than at the lowest regions leads to surface planarity. In this study, various complexing agents and inhibitors are combined to form slurry chemistry for copper CMP processing in H?O? based slurries at pH values ranging from 2 to 10. Two complexing agents (glycine and Ethylenediamine) and one inhibitor (3-amino-1, 2, 4-triazole) were selected as slurry constituents for detailed chemical synergistic effect study because they showed good materials removal and surface planarity performances. To understand the fundamental mechanisms involved in copper CMP process with the afore-mentioned slurry chemical formations, various techniques, such as electrochemical testing techniques (including potentiodynamic polarization and electrochemical impedance spectroscopy), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM), were applied. As a result, guidelines for optimized slurry chemical formulation were arrived at and the possible mechanisms of surface-chemical-abrasive interactions were determined. From applications point of view, this study serves as a guide for further investigations in pursuing highly effective slurry formulations for copper/low-k interconnect applications.
M.S.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Mechanical, Materials and Aerospace Engineering;

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Sampurno, Yasa. "Fundamental Consumables Characterization of Advanced Dielectric and Metal Chemical Mechanical Planarization Processes." Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/194544.

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This dissertation presents a series of studies relating to kinetics and kinematics of inter-layer dielectric and metal chemical mechanical planarization processes. These are also evaluated with the purposes of minimizing environmental and cost of ownership impact.The first study is performed to obtain the real-time substrate temperature during the polishing process and is specifically intended to understand the temperature distribution across the polishing wafer during the chemical mechanical planarization process. Later, this technique is implemented to study the effect of slurry injection position for optimum slurry usage. It is known that the performance of chemical mechanical planarization depends significantly on the polishing pad and the kinematics involved in the process. Variations in pad material and pad grooving type as well as pressure and sliding velocity can affect polishing performance. One study in this dissertation investigates thermoset and thermoplastic pad materials with different grooving methods and patterns. The study is conducted on multiple pressure and sliding velocity variations to understand the characteristic of each pad. The analysis method elaborated in this study can be applied generically.A subsequent study focuses in a slurry characterization technique. Slurry, a critical component in chemical mechanical planarization, is typically a water-based dispersion of fine abrasive particles with various additives to control material removal rate and microscratches. Simultaneous turbidity and low angle light scattering methods under well-defined mixing conditions are shown to quantify the stability of abrasive particle from aggregations. Further contribution of this dissertation involves studies related to the spectral analysis of raw shear force and down force data obtained during chemical mechanical planarization. These studies implemented Fast Fourier Transforms to convert force data from time to frequency domain. A study is performed to detect the presence of larger, defect-causing particles during polishing. In a further application on diamond disc conditioning work is performed to achieve optimum break-in time and an optimum conditioning duty cycle. Studies on spectral analysis are also extended to planarization of shallow trench isolation pattern wafers to monitor the polishing progress in real-time.

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Sorooshian, Jamshid. "Tribological, Thermal and Kinetic Characterization of Dielectric and Metal Chemical Mechanical Planarization Processes." Diss., Tucson, Arizona : University of Arizona, 2005. http://etd.library.arizona.edu/etd/GetFileServlet?file=file:///data1/pdf/etd/azu%5Fetd%5F1126%5F1%5Fm.pdf&type=application/pdf.

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Zantye, Parshuram B. "Processing, Reliability And Integration Issues In Chemical Mechanical Planarization." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001263.

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Mu, Yan, and Yan Mu. "Slurry Mean Residence Time Analysis and Pad-Wafer Contact Characterization in Chemical Mechanical Planarization." Diss., The University of Arizona, 2016. http://hdl.handle.net/10150/621459.

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This dissertation presents a series of studies related to the slurry mean residence time analysis and the pad-wafer contact characterization in Chemical Mechanical Planarization (CMP). The purpose of these studies is to further understand the fundamentals of CMP and to explore solutions to some of CMP's challenges. Mean residence time (MRT) is a widely used term that is mostly seen in classical chemical engineering reactor analysis. In a CMP process, the wafer-pad interface can be treated as a closed system reactor, and classical reactor theory can be applied to the slurry flow through the region. Slurry MRT represents the average time it takes for fresh incoming slurry to replace the existing slurry in the region bound between the pad and the wafer. Understanding the parameters that have an impact on MRT, and therefore removal rate, is critical to maintain tight specifications in the CMP process. In this dissertation, we proposed a novel slurry injection system (SIS) which efficiently introduced fresh slurry into the pad-wafer interface to reduce MRT. Results indicated that SIS exhibited lower slurry MRT and dispersion numbers but higher removal rates than the standard pad center slurry application by blocking the spent slurry and residual rinse water from re-entering the pad-wafer interface during polishing. Another study in this dissertation dealt with the effect of pad groove width on slurry MRT in the pad-wafer interface as well as slurry utilization efficiency (η). Three concentrically grooved pads with different groove widths were tested at different polishing pressures to experimentally determine the corresponding MRT using the residence time distribution (RTD) technique. Results showed that MRT and η increased significantly when the groove width increased from 300 to 600μm. On the other hand, when the groove width increased further to 900μm, MRT continued to increase while n remained constant. Results also indicated that MRT was reduced at a higher polishing pressure while η did not change significantly with pressure for all three pads. In the last study of this dissertation, the effect of pad surface micro-texture on removal rate during tungsten CMP was investigated. Two different conditioner discs ("Disc A" and "Disc B") were employed to generate different pad surface micro-textures during polishing. Results showed that "Disc B" generated consistently lower removal rates and coefficients of friction than "Disc A". To fundamentally elucidate the cause(s) of such differences, pad surface contact area and topography were analyzed using laser confocal microscopy. The comparison of the pad surface micro-texture analysis on pad surfaces conditioned by both discs indicated that "Disc A" generated a surface having a smaller abruptness (λ) and more solid contact area which resulted in a higher removal rate. In contrast, "Disc B" generated many large near-contact areas as a result of fractured and collapsed pore walls.

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Books on the topic "Chemical mechanical planarization (CMP)"

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Advances in CMP/polishing technologies for the manufacture of electronic devices. Oxford: Elsevier, 2012.

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1962-, Kumar Ashok, ed. Science and technology of chemical mechanical planarization (CMP): Symposium held April 14-16, 2009, San Francisco, California, U.S.A. Warrendale, Penn: Materials Research Society, 2010.

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Kulawski, Martin. Advanced CMP processes for special substrates and for device manufacturing in MEMS applications. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2006.

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1945-, Craven David R., ed. Tribology in chemical-mechanical planarization. Boca Raton, Fla: Taylor & Francis, 2005.

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Oliver, Michael R., ed. Chemical-Mechanical Planarization of Semiconductor Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0.

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Oliver, Michael R. Chemical-Mechanical Planarization of Semiconductor Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004.

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Steigerwald, Joseph M. Chemical mechanical planarization of microelectronic materials. New York: J. Wiley, 1997.

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International Symposium on Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing (6th 2003 Orlando, Fla.). Chemical mechanical planarization VI: Proceedings of the international symposium. Edited by Seal S, Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2003.

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International, Symposium on Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing (5th 2002 Philadelphia Pa ). Chemical mechanical planarization V: Proceedings of the International Symposium. Pennington, NJ: Electrochemical Society, Inc., 2002.

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International Symposium on Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing (4th 2000 Phoenix, Ariz.). Chemical mechanical planarization IV: Proceedings of the International Symposium. Edited by Opila R. L, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, Inc., 2001.

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Book chapters on the topic "Chemical mechanical planarization (CMP)"

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Borst, Christopher L., William N. Gill, and Ronald J. Gutmann. "Chemical-Mechanical Planarization (CMP)." In Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses, 45–69. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-1165-6_3.

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Oliver, Michael R. "CMP Technology." In Chemical-Mechanical Planarization of Semiconductor Materials, 7–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_2.

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de Larios, John. "CMP Cleaning." In Chemical-Mechanical Planarization of Semiconductor Materials, 251–81. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_8.

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Stein, David. "Metal CMP Science." In Chemical-Mechanical Planarization of Semiconductor Materials, 85–132. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_4.

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James, David B. "CMP Polishing Pads." In Chemical-Mechanical Planarization of Semiconductor Materials, 167–213. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_6.

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Robinson, K. M., K. DeVriendt, and D. R. Evans. "Integration Issues of CMP." In Chemical-Mechanical Planarization of Semiconductor Materials, 351–417. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_10.

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Robinson, Karl. "Fundamentals of CMP Slurry." In Chemical-Mechanical Planarization of Semiconductor Materials, 215–49. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_7.

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Tucker, Thomas. "Equipment Used in CMP Processes." In Chemical-Mechanical Planarization of Semiconductor Materials, 133–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-06234-0_5.

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Luo, Jianfeng, and David A. Dornfeld. "Review of CMP Modeling." In Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication, 15–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07928-7_2.

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Luo, Jianfeng, and David A. Dornfeld. "Wafer-Scale Modeling of CMP." In Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication, 255–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-07928-7_8.

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Conference papers on the topic "Chemical mechanical planarization (CMP)"

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de Roover, D., A. Emami-Naeini, and J. L. Ebert. "Model-based control for chemical-mechanical planarization (CMP)." In Proceedings of the 2004 American Control Conference. IEEE, 2004. http://dx.doi.org/10.23919/acc.2004.1383922.

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Kawaguchi, Kentaro, Takehiro Aizawa, Yuji Higuchi, Nobuki Ozawa, and Momoji Kubo. "Chemical mechanical polishing mechanisms for gallium nitride: Quantum chemical molecular dynamics simulations." In 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017241.

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Ozawa, Nobuki, Yuji Higuchi, and Momoji Kubo. "Chemical mechanical properties of perovskite oxide abrasive grain: First-principles approach." In 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017280.

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Seo, Young-Gil, Jin-Goo Park, and Periyasamy Elaiyaraju. "Effects of pump-induced particle agglomeration during chemical mechanical planarization (CMP)." In 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017293.

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Tolic, Frank, Tricia Burroughs, Christopher Borst, Richard Hill, Dinesh Penigelapati, Jakub Nalaskowski, and Satyavolu PapaRao. "Innovative advanced nanotechnology test mask for chemical and mechanical planarization process prediction." In 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017244.

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Poosarla, Pavan, Hamid Emadi, Abhijit Chandra, and Sourabh Bhattacharya. "Modeling and Control of Surface Quality in Chemical Mechanical Planarization (CMP)." In ASME 2017 Dynamic Systems and Control Conference. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/dscc2017-5240.

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Abstract:

Obtaining uniform surface finish across large length scales is extremely important in Chemical Mechanical Planarization (CMP). Existing control strategies use results from model simulations to propose open-loop control strategies to reduce the step height on surfaces being polished. In the present work, we propose a strategy to control the surface profile of substrate during CMP process. The evolution of the surface profile is predicted using the state space model of the polishing process. The resulting state space equation is solved and a closed form solution of the surface profile is obtained as a function of time. Based on the solution, we provide a fundamental limitation for the machining process in terms of the extent of planarization that can be achieved for a given material budget.

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Hsu, H. K., Y. M. Lin, L. C. Hsu, Y. T. Li, Y. L. Liu, W. S. Sie, Oliver Wang, C. C. Huang, and J. Y. Wu. "Optimized copper chemical mechanical polishing with CVD Co barrier at 14nm technology node." In 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017247.

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Lee, Changsuk, Jaehong Park, Han Wang, and Haedo Jeong. "Analysis of wafer edge pressure distribution using intelligent pad in chemical mechanical polishing." In 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017254.

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Jiang, Liang, Yongyong He, Xinchun Lu, and Jianbin Luo. "Investigation on the galvanic corrosion of copper during chemical mechanical polishing of ruthenium barrier layer." In 2014 International Conference on Planarization/CMP Technology (ICPT). IEEE, 2014. http://dx.doi.org/10.1109/icpt.2014.7017282.

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Nutsch, A., L. Pfitzner, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, and Erik M. Secula. "Chemical Mechanical Planarization (CMP) Metrology for 45∕32 nm Technology Generations." In CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. AIP, 2007. http://dx.doi.org/10.1063/1.2799365.

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