Relevant bibliographies by topics / Chemical vapour deposition

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Chemical vapour deposition'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "Chemical vapour deposition"

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BACHMANN, P. K., D. LEERS, and D. U. WIECHERT. "DIAMOND CHEMICAL VAPOUR DEPOSITION." Le Journal de Physique IV 02, no. C2 (September 1991): C2–907—C2–913. http://dx.doi.org/10.1051/jp4:19912109.

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Roy, S. K. "Laser chemical vapour deposition." Bulletin of Materials Science 11, no. 2-3 (November 1988): 129–35. http://dx.doi.org/10.1007/bf02744550.

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Marinkovic, S. N. "Chemical Vapour Deposition of Diamond." Materials Science Forum 214 (May 1996): 171–78. http://dx.doi.org/10.4028/www.scientific.net/msf.214.171.

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Swinbanks, David. "Chemical vapour deposition advances superconducters." Nature 332, no. 6162 (March 1988): 295. http://dx.doi.org/10.1038/332295a0.

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Choy, K. "Chemical vapour deposition of coatings." Progress in Materials Science 48, no. 2 (2003): 57–170. http://dx.doi.org/10.1016/s0079-6425(01)00009-3.

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Jönsson, Ulf, Göran Olofsson, Magnus Malmqvist, and Inger Rönnberg. "Chemical vapour deposition of silanes." Thin Solid Films 124, no. 2 (February 1985): 117–23. http://dx.doi.org/10.1016/0040-6090(85)90253-6.

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Wahl, G., and F. Schmaderer. "Chemical vapour deposition of superconductors." Journal of Materials Science 24, no. 4 (April 1989): 1141–58. http://dx.doi.org/10.1007/bf02397041.

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Chaudhari, Mandakini N. "Thin film Deposition Methods: A Critical Review." International Journal for Research in Applied Science and Engineering Technology 9, no. VI (June 30, 2021): 5215–32. http://dx.doi.org/10.22214/ijraset.2021.36154.

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The aim of this review paper is to present a critical analysis of existing methods of thin film deposition. Paper discusses some thin film techniques which are advanced and popular. The advantages and disadvantages of each method are mentioned. The two major areas of interest discussed are physical and chemical vapor deposition techniques. In general, thin film is a small thickness that produces by physical vapour deposition (PVD) and chemical vapour deposition (CVD). Despite the PVD technique has a few drawbacks, it remains an important method and more beneficial than CVD technique for depositing thin films materials. It is examined that some remarkable similarities and difference between the specific methods. The sub methods which are having common principle are classified. The number of researchers attempted to explain the how the specific method is important and applicable for the deposition of thin films. In conclusion the most important method of depositing thin films is CVD. For our research work the Spray Pyrolysis technique, which is versatile and found suitable to use.
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Mundra, S. S., S. S. Pardeshi, S. S. Bhavikatti, and Atul Nagras. "Development of an integrated physical vapour deposition and chemical vapour deposition system." Materials Today: Proceedings 46 (2021): 1229–34. http://dx.doi.org/10.1016/j.matpr.2021.02.069.

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Carlsson, Jan-Otto, Bertil Holmberg, Jorma Korvola, Erkki Kolehmainen, Knut Maartmann-Moe, and Nils Tælnes. "Precursor Design for Chemical Vapour Deposition." Acta Chemica Scandinavica 45 (1991): 864–69. http://dx.doi.org/10.3891/acta.chem.scand.45-0864.

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Dissertations / Theses on the topic "Chemical vapour deposition"

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Khanyile, Sfiso Zwelisha. "Deposition of silicon nanostructures by thermal chemical vapour deposition." University of the Western Cape, 2015. http://hdl.handle.net/11394/4445.

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>Magister Scientiae - MSc
In this thesis we report on the deposition of silicon nanostructures using a 3-zone thermal chemical vapour deposition process at atmospheric pressure. Nickel and gold thin films, deposited by DC sputtering on crystalline silicon substrates, were used as the catalyst material required for vapour-solid-liquid growth mechanism of the Si nanostructures. The core of this work is centred around the effect of catalyst type, substrate temperature and the source-to-substrate distance on the structural and optical properties of the resultant Si nanostructures, using argon as the carrier gas and Si powder as the source. The morphology and internal structure of the Si nanostructures was probed by using high resolution scanning and transmission electron microscopy, respectively. The crystallinity was measured by x-ray diffraction and the high resolution transmission electron microscopy. For composition and elemental analysis, Fourier transform infrared spectroscopy was used to quantify the bonding configuration, while electron energy-loss spectroscopy in conjunction with electron dispersion spectroscopy reveals the composition. Photoluminescence and UV-visible spectroscopy was used to extract the emission and reflection properties of the synthesized nanostructures.
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Cross, David Henry. "Laser induced chemical vapour deposition of aluminium." Thesis, Heriot-Watt University, 1992. http://hdl.handle.net/10399/815.

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Sime, Nathan. "Numerical modelling of chemical vapour deposition reactors." Thesis, University of Nottingham, 2016. http://eprints.nottingham.ac.uk/36227/.

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In this thesis we study the chemical reactions and transport phenomena which occur in a microwave power assisted chemical vapour deposition (MPA-CVD) reactor which facilitates diamond growth. First we introduce a model of an underlying binary gas flow and its chemistry for a hydrogen gas mixture. This system is heated by incorporating a microwave frequency electric field, operating in a resonant mode in the CVD chamber. This heating facilitates the dissociation of hydrogen and the generation of a gas discharge plasma, a key component of carbon deposition in industrial diamond manufacture. We then proceed to summarise the discontinuous Galerkin (DG) finite element discretisation of the standard hyperbolic and elliptic partial differential operators which typically occur in conservation laws of continuum models. Additionally, we summarise the non-stabilised discontinuous Galerkin formulation of the time harmonic Maxwell operator. These schemes are then used as the basis for the discretisation method employed for the numerical approximation of the MPA-CVD model equations. The practical implementation of the resulting DG MPA-CVD model is an extremely challenging task, which is prone to human error. Thereby, we introduce a mathematical approach for the symbolic formulation and computation of the underlying finite element method, based on automatic code generation. We extend this idea further such that the DG finite element formulation is automatically computed following the user's specification of the convective and viscous flux terms of the underlying PDE system in this symbolic framework. We then devise a method for writing a library of automatically generated DG finite element formulations for a hierarchy of partial differential equations with automatic treatment of prescribed boundary conditions. This toolbox for automatically computing DG finite element solutions is then applied to the DG MPA-CVD model. In particular, we consider reactor designs inspired by the AIXTRON and LIMHP reactors which are analysed extensively in the literature.
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Cummings, Franscious Riccardo. "Hot-wire chemical vapour deposition of carbon Nanotubes." Thesis, University of the Western Cape, 2006. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_3108_1205242611.

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In this study we report on the effect of the deposition parameters on the morphology and structural properties of CNTs, synthesized by means of the hot-wire chemical vapour deposition technique. SEM, Raman and XRD results show that the optimum deposition conditions for the HWCVD synthesis of aligned MWCNTs, with diameters between 50 and 150 nm and lengths in the micrometer range are: Furnace temperature of 500 º
C, deposition pressure between 150 and 200 Torr, methane/hydrogen dilution of 0.67 and a substrateto- filament distance of 10 cm.

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Cheng, Timothy Qiang. "Surface science studies of organometallic chemical vapour deposition." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape16/PQDD_0016/NQ28479.pdf.

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Binions, Russell. "Chemical vapour deposition of metal oxides and phosphides." Thesis, University College London (University of London), 2006. http://discovery.ucl.ac.uk/1444547/.

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This thesis investigates the deposition of thin films of main group metal phosphide and main group metal oxide compounds on glass substrates by the use of dual source atmospheric pressure chemical vapour deposition. Binary phosphide systems with tin, germanium, silicon, antimony, copper or boron have been examined. Binary oxide systems of gallium, antimony, tin or niobium have also been investigated. Additionally these systems were deposited on gas sensor substrates and evaluated as metal oxide semiconductor gas sensors. Halides were used as the metal precursor, RXPH3.X (R = Cychex or Phenyl) were used as phosphorous precursors and either methanol or ethyl acetate were used as oxygen precursors. These coatings showed good uniformity and coverage and the films were adherent passing the Scotch tape test. The tin phosphide films were opaque in appearance with some signs of birefringence due to differential thickness effects. Germanium phosphide and the gallium, antimony, niobium and tin oxide systems were all transparent, once again birefringence was observed. The films produced from the antimony phosphide and silicon phosphide systems were opaque, grey and metallic. Additional work was conducted on the deposition on a variety of alkali metal and alkaline earth metal fluorides on glass substrates using aerosol assisted chemical vapour deposition. In all cases the films were very powdery and were easily wiped off of the substrate. A number of depositions were carried out combining the aerosol and atmospheric pressure methodologies. A tin oxide film was produced from the atmospheric pressure chemical vapour deposition reaction of tin tetrachloride and ethyl acetate. The film contained tungsten, which was introduced into the reaction using a polyoxometalate delivered via aerosol assisted chemical vapour deposition. Films were analysed using Raman microscopy, X-ray diffraction, scanning electron microscopy, energy dispersive analysis of X-rays, electron probe microanalysis, X-ray photoelectron spectroscopy and ultra violet and visible spectroscopy.
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Sein, Htet. "Chemical vapour deposition of diamond onto dental burs." Thesis, Manchester Metropolitan University, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555137.

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Chemical vapour deposition (CVD) onto flat substrates has been researched extensively; however, little work has been on done on diamond deposition onto 3-D substrates. Diamond has excellent physical and chemical properties and has considerable potential for use in dental tools and biomedical implants. Since the 1950s sintered diamond burs have been used and are made using diamond particles bonded onto the substrate using a binder matrix material. The binder contains potentially poisonous components such as nickel and CVD technology eliminates the use of such binder materials. Hot Filament Chemical Vapour Deposition (HFCVD) uses a horizontal filament mounted above the substrate. For 3-D substrates the system was modified with the filament mounted vertically and the substrate held concentrically within the coil in a system called vertical filament CVD (VFCVD). Process optimisation was conducted on molybdenum wire and then diamond films were deposited onto metals such as titanium, molybdenum and tungsten carbide (WC-Co) burs. A pre-treatment was required on WC-Co burs using Murakami reagent was used for etching followed by acid etching to remove excess Co from the surface and improve adhesion. The growth rate, adhesion, surface roughness, composition and nucleation densities were all investigated. The substrate temperature influenced the compressive stress of the diamond films due to the thermal gradient, which is related to the position of the substrate within the filament. Machining tests showed that the wear rates of the coated diamond tools were considerably lower than the uncoated burs. These were quantified using a Figure of 5 Merit (F) which was then plotted against the number of holes drilled for uncoated, sintered and VFCVD diamond coated burs to assess the tool performances on human tooth material, acrylic and borosilicate glass. All of the tests showed that the diamond coated dental burs using the new VFCVD process demonstrated a superior performance compared to sintered and uncoated burs.
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Chubarov, Mikhail. "Chemical Vapour Deposition of sp2 Hybridised Boron Nitride." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-112580.

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The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp2 hybridised Boron Nitride (sp2-BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp2-BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures. For the growth of sp2-BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H2 as carrier gas is found to be necessary for the growth of crystalline sp2-BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp2-BN film. It was observed that for the growth of crystalline sp2-BN on c-axis oriented α-Al2O3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp2-BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of  crystalline sp2-BN is 1500 °C. Nevertheless, the growth of crystalline sp2-BN was also observed on α-Al2O3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp2-BN was formed, according to X-ray diffraction. Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on α-Al2O3 with an AlN buffer layer starts with the formation of hexagonal BN (h-BN) for a thickness of around 4 nm. The formation of h-BN was observed at growth temperatures of 1200 °C and 1500 °C on α-Al2O3 with AlN buffer layer while there were no traces of h-BN found in the films deposited on SiC substrates in the temperature range between 1200 °C and 1700 °C. As an explanation for such growth behaviour, reproduction of the substrate crystal stacking is suggested.  Nucleation and growth mechanism are investigated and presented in the papers included in this thesis.
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Low, Y. H. "Chemical vapour deposition of iron and cobalt layers." Thesis, Queen's University Belfast, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.437845.

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Manning, Troy Darrell. "Atmospheric pressure chemical vapour deposition of vanadium oxides." Thesis, University College London (University of London), 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.408676.

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Books on the topic "Chemical vapour deposition"

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Jones, Anthony C., and Michael L. Hitchman, eds. Chemical Vapour Deposition. Cambridge: Royal Society of Chemistry, 2008. http://dx.doi.org/10.1039/9781847558794.

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Xu, Yongdong, and Xiu-Tian Yan. Chemical Vapour Deposition. London: Springer London, 2010. http://dx.doi.org/10.1007/978-1-84882-894-0.

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Carlsson, Jan-Otto. Progress in chemical vapour deposition. Oxford: Pergamon, 1994.

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Wilson, M. I. Chemical vapour deposition onto porous materials. Manchester: UMIST, 1993.

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Moroșanu, C. E. Thin films by chemical vapour deposition. Amsterdam: Elsevier, 1990.

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C, Jones Anthony, and Hitchman Michael L, eds. Chemical vapour deposition: Precursors, processes and applications. Cambridge, UK: Royal Society of Chemistry, 2009.

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Ahmed, Waqar, Htet Sein, Mark J. Jackson, Christopher Rego, David A. Phoenix, Abdelbary Elhissi, and St John Crean. Chemical Vapour Deposition of Diamond for Dental Tools and Burs. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-00648-2.

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Yongdong, Xu. Chemical vapour deposition: An integrated engineering design for advanced materials. London: Springer, 2009.

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Ahmed, Waqar. Studies in low pressure chemical vapour deposition of polycrystalline silicon. Salford: University of Salford, 1986.

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Moene, Robert. Application of chemical vapour deposition in catalyst design: Development of high surface area silicon carbide as catalyst support. The Netherlands: Delft University Press, 1995.

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Book chapters on the topic "Chemical vapour deposition"

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Angus, John C., Alberto Argoitia, Roy Gat, Zhidan Li, Mahendra Sunkara, Long Wang, and Yaxin Wang. "Chemical vapour deposition of diamond." In Thin Film Diamond, 1–14. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-0725-9_1.

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Carlsson, J. O. "Thermally activated chemical vapour deposition." In Advanced Surface Coatings: a Handbook of Surface Engineering, 162–93. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3040-0_7.

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Rickerby, D. S. "Plasma-assisted chemical vapour deposition." In Advanced Surface Coatings: a Handbook of Surface Engineering, 194–216. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3040-0_8.

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Adesina, Akeem Yusuf, and Nasirudeen Ogunlakin. "Physical and Chemical Vapour Deposition Coatings." In Advances in Corrosion Control of Magnesium and its Alloys, 305–24. Boca Raton: CRC Press, 2023. http://dx.doi.org/10.1201/9781003319856-21.

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Hwang, Nong Moon. "Thermodynamics of Physical and Chemical Vapour Deposition." In Non-Classical Crystallization of Thin Films and Nanostructures in CVD and PVD Processes, 21–50. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-7616-5_2.

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Irvine, S. J. C. "Photochemical Vapour Deposition of Thin Films." In Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies, 199–222. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0353-7_9.

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Williams, J. O., R. Hoare, N. Hunt, and M. J. Parrott. "Monitoring Chemical Reactions in Metal-Organic Chemical Vapour Deposition (MOCVD)." In Mechanisms of Reactions of Organometallic Compounds with Surfaces, 131–43. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4899-2522-0_17.

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Conde, O., A. J. Silvestre, and M. L. Paramés. "Laser Chemical Vapour Deposition of Titanium-Based Hard Coatings." In Laser Processing: Surface Treatment and Film Deposition, 665–91. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0197-1_34.

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Ahmed, Waqar, Htet Sein, Mark J. Jackson, Christopher Rego, David A. Phoenix, Abdelbary Elhissi, and St John Crean. "Diamond Deposition onto Flat Substrates." In Chemical Vapour Deposition of Diamond for Dental Tools and Burs, 73–81. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-00648-2_4.

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Galuszka, J., and T. Giddings. "Silica Membranes - Preparation by Chemical Vapour Deposition and Characteristics." In Membranes for Membrane Reactors, 335–56. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9780470977569.ch12.

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Conference papers on the topic "Chemical vapour deposition"

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Bennett, R. H., J. Simpson, and K. L. Lewis. "Radical Activated Chemical Vapour Deposition of Oxides." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.mb.3.

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Traditional chemical vapour deposition processes, as widely used in the semiconductor industry, involve the introduction of a vapour phase organometallic precursor material to the reaction chamber, where decomposition of the vapour to form a solid film is triggered by heating the substrate. CVD methods for fabrication of optical thin film devices are becoming increasingly popular and there is a continuing drive towards plasma based CVD systems which promote deposition at lower substrate temperatures, allowing film growth on less temperature tolerant substrates.
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Barry, S. T., M. B. E. Griffiths, D. J. Mandia, J. P. Coyle, P. G. Gordon, W. Zhou, L. Shao, and J. Albert. "Chemical Vapour Deposition and Atomic Layer Deposition: Metals for Optical Fibres." In Workshop on Specialty Optical Fibers and their Applications. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/wsof.2013.w4.3.

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Netterfield, R. P., and Ian Llewellyn. "Narrow-Band Notch Filters produced by Plasma Impulse Chemical Vapour Deposition." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.mb.4.

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There have been several publications in recent years on the use of Plasma Impulse Chemical Vapour Deposition (PICVD) as a means of depositing optical multilayer coatings under computer control [1-4]. We report on the use of the technique in the deposition of notch filters consisting of up to 200 alternating layers of SiO2 and SiOxNy.
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Karuppannan, Ramesh, and M. Prashantha. "Nano structured carbon nitrides prepared by chemical vapour deposition." In SPIE NanoScience + Engineering, edited by Didier Pribat, Young-Hee Lee, and Manijeh Razeghi. SPIE, 2010. http://dx.doi.org/10.1117/12.861609.

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Schneider, Kerstin, Boris Stamm, Katja Gutohrlein, Monika Fleischer, Claus Burkhardt, Alfred Stett, and Dieter P. Kern. "Carbon nanotubes grown on polyimide by chemical vapour deposition." In 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2012. http://dx.doi.org/10.1109/nano.2012.6321986.

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Malik, Mohammad, Javeed Akhtar, Jocelyn Bruce, Klaus Koch, Mohammad afzaal, and Paul o'Brien. "Deposition of Phosphorus Free PbSe Thin film by Aerosol Assisted Chemical Vapour Deposition." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1148-pp12-08.

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Sainty, Wayne G., William D. McFall, and David R. McKenzie. "Aspects of Plasma Assisted Chemical Vapour Deposition for Deposition of Graded Index Multilayers." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.mb.5.

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Sharma, K. K., and Claudio Manfredotti. "Photostable amorphous-silicon films by low-pressure chemical vapour deposition." In Madras - DL tentative. SPIE, 1992. http://dx.doi.org/10.1117/12.56990.

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Garrido, C., D. Braichotte, H. van den Bergh, B. Leon, and M. Perez-Amor. "Laser Induced Chemical Vapour Deposition Of Platinum Spots On Glass." In 1988 International Congress on Optical Science and Engineering, edited by Lucien D. Laude and Gerhard K. Rauscher. SPIE, 1989. http://dx.doi.org/10.1117/12.950105.

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Baraton, Laurent, Laurent Gangloff, Stéphane Xavier, Costel S. Cojocaru, Vincent Huc, Pierre Legagneux, Young Hee Lee, and Didier Pribat. "Growth of graphene films by plasma enhanced chemical vapour deposition." In SPIE NanoScience + Engineering, edited by Manijeh Razeghi, Didier Pribat, and Young-Hee Lee. SPIE, 2009. http://dx.doi.org/10.1117/12.828747.

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Reports on the topic "Chemical vapour deposition"

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Saunders, A., and A. Vecht. The preparation of thin films for photovoltaic conversion by novel MOCVD (metallorganic chemical vapour deposition) techniques: Annual subcontract report, 15 February 1985-15 April 1986. Office of Scientific and Technical Information (OSTI), October 1986. http://dx.doi.org/10.2172/6959200.

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Baron, B. N., R. E. Rocheleau, and S. S. Hegedus. Chemical vapor deposition and photochemical vapor deposition of amorphous silicon photovoltaic devices. Office of Scientific and Technical Information (OSTI), November 1989. http://dx.doi.org/10.2172/5042415.

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Mayer, T. M., D. P. Adams, B. S. Swartzentruber, and E. Chason. Dynamics of nucleation in chemical vapor deposition. Office of Scientific and Technical Information (OSTI), November 1995. http://dx.doi.org/10.2172/170570.

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Rice, Anthony, and Mary Crawford. Chemical Vapor Deposition of Cubic Boron Nitride. Office of Scientific and Technical Information (OSTI), September 2021. http://dx.doi.org/10.2172/1821316.

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HO, PAULINE. Chemical reactions in TEOS/ozone chemical vapor deposition[TetraEthylOrtho Silicate]. Office of Scientific and Technical Information (OSTI), February 2000. http://dx.doi.org/10.2172/751369.

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Kaplan, Daniel, Kendall Mills, and Venkataraman Swaminathan. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2). Fort Belvoir, VA: Defense Technical Information Center, March 2015. http://dx.doi.org/10.21236/ada613852.

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Stevenson, D. A. Fundamental studies of the chemical vapor deposition of diamond. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/5639356.

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Muenchausen, R. Chemical-vapor deposition of complex oxides: materials and process development. Office of Scientific and Technical Information (OSTI), November 1996. http://dx.doi.org/10.2172/405750.

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9

Banks, H. T. Modeling Validation and Control of Advanced Chemical Vapor Deposition Processes. Fort Belvoir, VA: Defense Technical Information Center, November 2000. http://dx.doi.org/10.21236/ada384359.

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10

Lampert, Lester. High-Quality Chemical Vapor Deposition Graphene-Based Spin Transport Channels. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.3308.

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