Log in

Relevant bibliographies by topics / Chemical vapour deposition (CVD)

Contents

Journal articles
Dissertations / Theses
Books
Book chapters
Conference papers
Reports

Academic literature on the topic 'Chemical vapour deposition (CVD)'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Chemical vapour deposition (CVD).'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Chemical vapour deposition (CVD)"

1

Chaudhari, Mandakini N. "Thin film Deposition Methods: A Critical Review." International Journal for Research in Applied Science and Engineering Technology 9, no. VI (June 30, 2021): 5215–32. http://dx.doi.org/10.22214/ijraset.2021.36154.

Full text

Abstract:

The aim of this review paper is to present a critical analysis of existing methods of thin film deposition. Paper discusses some thin film techniques which are advanced and popular. The advantages and disadvantages of each method are mentioned. The two major areas of interest discussed are physical and chemical vapor deposition techniques. In general, thin film is a small thickness that produces by physical vapour deposition (PVD) and chemical vapour deposition (CVD). Despite the PVD technique has a few drawbacks, it remains an important method and more beneficial than CVD technique for depositing thin films materials. It is examined that some remarkable similarities and difference between the specific methods. The sub methods which are having common principle are classified. The number of researchers attempted to explain the how the specific method is important and applicable for the deposition of thin films. In conclusion the most important method of depositing thin films is CVD. For our research work the Spray Pyrolysis technique, which is versatile and found suitable to use.

APA, Harvard, Vancouver, ISO, and other styles

2

Mohammadi, A., M. A. Hasan, B. Liedberg, I. Lundström, and W. R. Salaneck. "Chemical vapour deposition (CVD) of conducting polymers: Polypyrrole." Synthetic Metals 14, no. 3 (April 1986): 189–97. http://dx.doi.org/10.1016/0379-6779(86)90183-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Gómez-Aleixandre, C., J. M. Albella, F. Ojeda, and F. J. Martí. "Síntesis de materiales cerámicos mediante técnicas químicas en fase vapor (CVD)." Boletín de la Sociedad Española de Cerámica y Vidrio 42, no. 1 (February 28, 2003): 27–31. http://dx.doi.org/10.3989/cyv.2003.v42.i1.653.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Loo, Adeline Huiling, Adriano Ambrosi, Alessandra Bonanni, and Martin Pumera. "CVD graphene based immunosensor." RSC Adv. 4, no. 46 (2014): 23952–56. http://dx.doi.org/10.1039/c4ra03506b.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Besmann, T. M., D. P. Stinton, and R. A. Lowden. "Chemical Vapor Deposition Techniques." MRS Bulletin 13, no. 11 (November 1988): 45–51. http://dx.doi.org/10.1557/s0883769400063910.

Full text

Abstract:

Chemical vapor deposition (CVD) is one of the few deposition processes in which the deposited phase is produced in situ via chemical reaction(s). Thus the vapor source for CVD can consist of high vapor pressure species at moderate temperatures and yet deposit very high-melting phases. For example, pure TiB2, which melts at 3225°C, can be produced at 900°C from TiCl4, BC13, and H2.Chemical vapor deposition and its variants such as low pressure CVD (LPCVD), plasma-assisted CVD (PACVD), and laser CVD (LCVD) have been active areas of research for many years. Recent review articles have contained extensive lists of the phases deposited by CVD, which include most of the metals and many carbides, nitrides, borides, silicides, and sulfides. The techniques have found increased acceptance as commercial methods for the fabrication of films and coatings which are fundamental to the semiconductor device and the high-performance tool bit industries. They have been used to prepare multiphase-multilayer coatings, stand-alone bodies, and fiber-reinforced composites. As the demand increases for more complex and sophisticated materials, it is expected that CVD will play a still larger role.In CVD a solid material is deposited from gaseous precursors onto a substrate. The substrate is typically heated to promote the deposition reaction and/or provide sufficient mobility of the adatoms to form the desired structure. Chemical vapor deposition was performed for the first time when early humans inadvertently coated cooking utensils with soot from the campfire. In this CVD process, hydrocarbons generated by the heated wood pyrolyzed on the utensil surface, depositing carbon.

APA, Harvard, Vancouver, ISO, and other styles

6

Han, Shuming, Cailei Yuan, Xingfang Luo, Yingjie Cao, Ting Yu, Yong Yang, Qinliang Li, and Shuangli Ye. "Horizontal growth of MoS2 nanowires by chemical vapour deposition." RSC Advances 5, no. 84 (2015): 68283–86. http://dx.doi.org/10.1039/c5ra13733k.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Moser, Thierry, Kerem Artuk, Yan Jiang, Thomas Feurer, Evgeniia Gilshtein, Ayodhya N. Tiwari, and Fan Fu. "Revealing the perovskite formation kinetics during chemical vapour deposition." Journal of Materials Chemistry A 8, no. 42 (2020): 21973–82. http://dx.doi.org/10.1039/d0ta04501b.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Kumar, R., and R. J. Puddephatt. "New precursors for organometallic chemical vapor deposition of rhodium." Canadian Journal of Chemistry 69, no. 1 (January 1, 1991): 108–10. http://dx.doi.org/10.1139/v91-017.

Full text

Abstract:

The η-cyclopentadienyl (Cp) and η-allyl (C3H5) complexes [RhCp(CO)2], [RhCp(cod)] where cod = 1,5-cyclooctadiene, [Rh(η-C3H5)(CO)2], and [Rh(η-C3H5)3] have been shown to be useful precursors for the chemical vapour deposition (CVD) of rhodium films. The rhodium films contain carbon impurities but these can be greatly reduced if CVD is carried out in the presence of hydrogen. The films adhere well to a silicon substrate. The pyrolysis of [RhCp(CO)2] gives CO and [Rh2Cp2(CO)2(μ-CO)] and [Rh3Cp3(μ-CO)3] at intermediate stages. Pyrolysis of [Rh(η-C3H5)3] or [Rh(η-C3H5)(CO)2] gives 1,5-hexadiene as the only organic product, but similar pyrolysis in the presence of hydrogen gives much propene as well as 1,5-hexadiene. Key words: rhodium, deposition, allyl, cyclopentadienyl.

APA, Harvard, Vancouver, ISO, and other styles

9

Saeed, Maryam, Yousef Alshammari, Shereen A. Majeed, and Eissa Al-Nasrallah. "Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review." Molecules 25, no. 17 (August 25, 2020): 3856. http://dx.doi.org/10.3390/molecules25173856.

Full text

Abstract:

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

APA, Harvard, Vancouver, ISO, and other styles

10

Chen, Mingguang, Robert C. Haddon, Ruoxue Yan, and Elena Bekyarova. "Advances in transferring chemical vapour deposition graphene: a review." Materials Horizons 4, no. 6 (2017): 1054–63. http://dx.doi.org/10.1039/c7mh00485k.

Full text

APA, Harvard, Vancouver, ISO, and other styles

More sources

Dissertations / Theses on the topic "Chemical vapour deposition (CVD)"

1

Hetherington, Alan Veron. "Electron microscopy of CVD diamond films." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388429.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Bain, Michael. "The deposition and characterisation of CVD tungsten." Thesis, Queen's University Belfast, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326383.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Ye, Liang. "Rapid thermal CVD of epitaxial silicon from dichlorosilane source." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333849.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Huang, Chung-Che. "Development of germanium based sulphide glass by chemical vapour deposition (CVD)." Thesis, University of Southampton, 2005. https://eprints.soton.ac.uk/65505/.

Full text

Abstract:

Chalcogenide glasses, especially sulphide glasses, are becoming more and more important for the fabrication of optoelectronic devices in part because of the high nonlinearity, strong photosensitivity and several other unique properties they have. Chalcogenide glasses are normally fabricated by a conventional melt-quenching method. The glasses are then further processed to form, for example, thin films, optical fibre and optoelectronic devices. /°C. The purity of germanium sulphide bulk glass bas been determined by a glow discharge mass spectrometry (GDMS) technique and an exceptionally low level of transition metal impurities in this glass have been achieved.

APA, Harvard, Vancouver, ISO, and other styles

5

Lewis, Amanda. "Fundamental studies of the chemical vapour deposition of graphene on copper." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/fundamental-studies-of-the-chemical-vapour-deposition-of-graphene-on-copper(f85feb54-5994-4201-b400-c622f4d7b216).html.

Full text

Abstract:

The chemical vapour deposition (CVD) of graphene is the most promising route for production of large-area graphene films. However there are still major challenges faced by the field, including control of the graphene coverage, quality, and the number of layers. These challenges can be overcome by developing a fundamental understanding of the graphene growth process. This thesis contributes to the growing body of work on graphene CVD by uniquely exploring the gas phase chemistry and fluid flow in the hot-wall graphene CVD reactor. Firstly the reported parameter space for the hot-wall CVD of graphene on copper was mapped, informing the subsequent work and providing a resource for the wider community. A CVD reactor was constructed to extend this parameter space to lower pressures using methane as a carbon source, and the films were categorised using scanning electron microscopy, Raman spectroscopy and optical dark field microscopy. The latter showed particular promise as a rapid and non-destructive characterization technique for identifying graphene films on the deposition substrate. The gas phase equilibrium compositions were calculated across the parameter space, and correlations between the stabilities of various chemical species and the types of deposition were drawn. This laid a foundation for the remainder of the experimental work, which explored the effect of diluent gases and different feedstocks on the growth to understand the importance of the identified correlations. Diluent gases (argon and nitrogen) were added to the experimental conditions and the thermodynamic model, and were found to reduce the degree of coverage of the graphene films. This result shows that the CVD of graphene is sensitive to factors other than the thermodynamic state parameters, such as the fluid flow profile in the reactor and inelastic collisions between the higher mass diluent gases and the methane/hydrogen/copper system. Using a nitrogen diluent raises the equilibrium carbon vapour pressure and seems to allow larger graphene grains to form. This suggests that thermodynamic factors can contribute to the nucleation of graphene films. Varying the hydrocarbon feedstock and the process conditions indicated that the structure of the deposited carbon is closely related to the nucleation kinetics. Three nucleation regimes are associated with different types of deposition: homogeneous nucleation with amorphous carbon or soot; uncatalysed nucleation with multilayer deposition; and nucleation processes controlled by the copper substrate withpredominantly monolayer deposition. Changing the feedstock from methane to acetylene resulted in poorer graphene coverage, showing that thermodynamic control does not apply in the portion of the parameter space at the high temperatures and lowpressures most successfully used for the deposition of continuous graphene monolayers.

APA, Harvard, Vancouver, ISO, and other styles

6

Baluti, Florentina. "Monte Carlo Simulations of Chemical Vapour Deposition Diamond Detectors." Thesis, University of Canterbury. Physics and Astronomy, 2009. http://hdl.handle.net/10092/3190.

Full text

Abstract:

Chemical Vapour Deposition (CVD) diamond detectors were modelled for dosimetry of radiotherapy beams. This was achieved by employing the EGSnrc Monte Carlo (MC) method to investigate certain properties of the detector, such as size, shape and electrode materials. Simulations were carried out for a broad 6 MV photon beam, and water phantoms with both uniform and non-uniform voxel dimensions. A number of critical MC parameters were investigated for the development of a model that can simulate very small voxels. For a given number of histories (100 million), combinations of the following parameters were analyzed: cross section data, boundary crossing algorithm and the HOWFARLESS option, with the rest of the transport parameters being kept at default values. The MC model obtained with the optimized parameters was successfully validated against published data for a 1.25 MeV photon beam and CVD diamond detector with silver/carbon/silver structure with thicknesses of 0.07/0.2/0.07 cm for the electrode/detector/electrode, respectively. The interface phenomena were investigated for a 6 MV beam by simulating different electrode materials: aluminium, silver, copper and gold for perpendicular and parallel detector orientation with regards to the beam. The smallest interface phenomena were observed for parallel detector orientation with electrodes made of the lowest atomic number material, which was aluminium. The simulated percentage depth dose and beam profiles were compared with experimental data. The best agreement between simulation and measurement was achieved for the detector in parallel orientation and aluminium electrodes, with differences of approximately 1%. In summary, investigations related to the CVD diamond detector modelling revealed that the EGSnrc MC code is suitable for simulation of small size detectors. The simulation results are in good agreement with experimental data and the model can now be used to assist with the design and construction of prototype diamond detectors for clinical dosimetry. Future work will include investigating the detector response for different energies, small field sizes, different orientations other than perpendicular and parallel to the beam, and the influence of each electrode on the absorbed dose.

APA, Harvard, Vancouver, ISO, and other styles

7

Cave, Hadley Mervyn. "Development of Modelling Techniques for Pulsed Pressure Chemical Vapour Deposition (PP-CVD)." Thesis, University of Canterbury. Mechanical Engineering, 2008. http://hdl.handle.net/10092/1572.

Full text

Abstract:

In this thesis, a numerical and theoretical investigation of the Pulsed Pressure Chemical Vapour Deposition (PP-CVD) progress is presented. This process is a novel method for the deposition of thin films of materials from either liquid or gaseous precursors. PP-CVD operates in an unsteady manner whereby timed pulsed of the precursor are injected into a continuously evacuated reactor volume. A non-dimensional parameter indicating the extent of continuum breakdown under strong temporal gradients is developed. Experimental measurements, supplemented by basic continuum simulations, reveal that spatio-temporal breakdown of the continuum condition occurs within the reactor volume. This means that the use of continuum equation based solvers for modelling the flow field is inappropriate. In this thesis, appropriate methods are developed for modelling unsteady non-continuum flows, centred on the particle-based Direct Simulation Monte Carlo (DSMC) method. As a first step, a basic particle tracking method and single processor DSMC code are used to investigate the physical mechanisms for the high precursor conversion efficiency and deposition uniformity observed in experimental reactors. This investigation reveals that at soon after the completion of the PP-CVD injection phase, the precursor particles have an approximately uniform distribution within the reactor volume. The particles then simply diffuse to the substrate during the pump-down phase, during which the rate of diffusion greatly exceeds the rate at which particles can be removed from the reactor. Higher precursor conversion efficiency was found to correlate with smaller size carrier gas molecules and moderate reactor peak pressure. An unsteady sampling routine for a general parallel DSMC method called PDSC, allowing the simulation of time-dependent flow problems in the near continuum range, is then developed in detail. Nearest neighbour collision routines are also implemented and verified for this code. A post-processing procedure called DSMC Rapid Ensemble Averaging Method (DREAM) is developed to improve the statistical scatter in the results while minimising both memory and simulation time. This method builds an ensemble average of repeated runs over small number of sampling intervals prior to the sampling point of interest by restarting the flow using either xi a Maxwellian distribution based on macroscopic properties for near equilibrium flows (DREAM-I) or output instantaneous particle data obtained by the original unsteady sampling of PDSC for strongly non-equilibrium flows (DREAM-II). The method is validated by simulating shock tube flow and the development of simple Couette flow. Unsteady PDSC is found to accurately predict the flow field in both cases with significantly reduced run-times over single processor code and DREAM greatly reduces the statistical scatter in the results while maintaining accurate particle velocity distributions. Verification simulations are conducted involving the interaction of shocks over wedges and a benchmark study against other DSMC code is conducted. The unsteady PDSC routines are then used to simulate the PP-CVD injection phase. These simulations reveal the complex flow phenomena present during this stage. The initial expansion is highly unsteady; however a quasi-steady jet structure forms within the reactor after this initial stage. The simulations give additional evidence that the collapse of the jet at the end of the injection phase results in an approximately uniform distribution of precursor throughout the reactor volume. Advanced modelling methods and the future work required for development of the PP-CVD method are then proposed. These methods will allow all configurations of reactor to be modelled while reducing the computational expense of the simulations.

APA, Harvard, Vancouver, ISO, and other styles

8

au, E. Mohamed@murdoch edu, and Eman Mohamed. "Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapour Deposition." Murdoch University, 2004. http://wwwlib.murdoch.edu.au/adt/browse/view/adt-MU20050421.133523.

Full text

Abstract:

Silicon is widely used in optoelectronic devices, including solar cells. In recent years new forms of silicon have become available, including amorphous, microcrystalline and nano-crystalline material. These new forms have great promise for low cost, thin film solar cells and the purpose of this work is to investigate their preparation and properties with a view to their future use in solar cells. A Hot Wire-Deposition Chemical Vapour Deposition CVD (HW-CVD) system was constructed to create a multi-chamber high vacuum system in combination with an existing Plasma Enhanced Chemical Vapour Deposition (PECVD) system; to study the amorphous to crystalline transition in silicon thin films. As the two chambers were linked by a common airlock, it was essential to construct a transfer mechanism to allow the transfer of the sample holder between the two systems. This was accomplished by the incorporation of two gate valves between the two chambers and the common airlock as well as a rail system and a magnetic drive that were designed to support the weight of, and to guide the sample holder through the system. The effect of different deposition conditions on the properties and structure of the material deposited in the combined HW-CVD:PECVD system were investigated. The conditions needed to obtain a range of materials, including amorphous, nano- and microcrystalline silicon films were determined and then successfully replicated. The structure of each material was analysed using Transmission Electron Microscopy (TEM). The presence of crystallites in the material was confirmed and the structure of the material detected by TEM was compared to the results obtained by Raman spectroscopy. The Raman spectrum of each sample was decoupled into three components representing the amorphous, intermediate and crystalline phases. The Raman analysis revealed that the amorphous silicon thin film had a dominant amorphous phase with smaller contribution from the intermediate and crystalline phase. This result supported the findings of the TEM studies which showed some medium range order. Analysis of the Raman spectrum for samples deposited at increasing filament temperatures showed that the degree of order within the samples increased, with the evolution of the crystalline phase and decline of the amorphous phase. The Selected Area Diffraction (SAD) patterns obtained from the TEM were analysed to gain qualitative information regarding the change in crystallite size. These findings have been confirmed by the TEM micrograph measurements. The deposition regime where the transition from amorphous to microcrystalline silicon took place was examined by varying the deposition parameters of filament temperature, total pressure in the chamber, gas flow rate, deposition time and substrate temperature. The IR absorption spectrum for Ýc-Si showed the typical peaks at 2100cm-1 and 626cm-1, of the stretching and wagging modes, respectively. The increase in the crystallinity of the thin films was consistent with the evolution of the 2100cm-1 band in IR, and the decreasing hydrogen content, as well as the shift of the wagging mode to lower wavenumber. IR spectroscopy has proven to be a sensitive technique for detecting the crystalline phase in the deposited material. Several devices were also constructed by depositing the Ýc-Si thin films as the intrinsic layer in a solar cell, to obtain information on their characteristics. The p- layer (amorphous silicon) was deposited in the PECVD chamber, and the sample was then transferred under vacuum using the transport system to the HW-CVD chamber where the i-layer (microcrystalline silicon) was deposited. The sample holder was transferred back to the PECVD chamber where the n-layer (amorphous silicon) was deposited. The research presented in this thesis represents a preliminary investigation of the properties of Ýc-Si thin films. Once the properties and optimum deposition characteristics for thin films are established, this research can form the basis for the optimization of a solar cell consisting of the most efficient combination of amorphous, nano- and microcrystalline materials.

APA, Harvard, Vancouver, ISO, and other styles

9

Hassan, Israr-Ul. "Biased enhanced nucleation of CVD diamond films." Thesis, Manchester Metropolitan University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.369078.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Vinten, Phillip A. "Chemical Vapour Deposition Growth of Carbon Nanotube Forests: Kinetics, Morphology, Composition, and Their Mechanisms." Thèse, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24165.

Full text

Abstract:

This thesis analyzes the chemical vapour deposition (CVD) growth of vertically aligned carbon nanotube (CNT) forests in order to understand how CNT forests grow, why they stop growing, and how to control the properties of the synthesized CNTs. In situ kinetics data of the growth of CNT forests are gathered by in situ optical microscopy. The overall morphology of the forests and the characteristics of the individual CNTs in the forests are investigated using scanning electron microscopy and Raman spectroscopy. The in situ data show that forest growth and termination are activated processes (with activation energies on the order of 1 eV), suggesting a possible chemical origin. The activation energy changes at a critical temperature for ethanol CVD (approximately 870°C). These activation energies and critical temperature are also seen in the temperature dependence of several important characteristics of the CNTs, including the defect density as determined by Raman spectroscopy. This observation is seen across several CVD processes and suggests a mechanism of defect healing. The CNT diameter also depends on the growth temperature. In this thesis, a thermodynamic model is proposed. This model predicts a temperature and pressure dependence of the CNT diameter from the thermodynamics of the synthesis reaction and the effect of strain on the enthalpy of formation of CNTs. The forest morphology suggests significant interaction between the constituent CNTs. These interactions may play a role in termination. The morphology, in particular a microscale rippling feature that is capable of diffracting light, suggest a non-uniform growth rate across the forest. A gas phase diffusion model predicts a non-uniform distribution of the source gas. This gas phase diffusion is suggested as a possible explanation for the non-uniform growth rate. The gas phase diffusion is important because growth by acetylene CVD is found to be very efficient (approximately 30% of the acetylene is converted to CNTs). It is seen that multiple mechanisms are active during CNT growth. The results of this thesis provide insight into both the basic understanding of the microscopic processes involved in CVD growth and how to control the properties of the synthesized CNTs.

APA, Harvard, Vancouver, ISO, and other styles

More sources

Books on the topic "Chemical vapour deposition (CVD)"

1

Gesheva, K. A. Chemical vapor deposition (CVD) technology. Hauppauge, N.Y: Nova Science Publishers, 2008.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

2

Bliznakovska, Blagica. CVD: Main concepts, applications and restrictions. Jülich: Forschungszentrum Jülich GmbH, Zentralbibliothek, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

3

Moran, Robert. Thin layer deposition: Highlighting CVD. Norwalk, CT: Business Communications Co., 2000.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

4

Robert, Moran. Thin layer deposition: Highlighting CVD. Norwalk, CT: Business Communications Co., 1996.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

5

United States. National Aeronautics and Space Administration., ed. An overview of CVD processes. Washington DC: National Aeronautics and Space Administration, 1986.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

6

Syrkin, V. G. CVD-metod: Khimicheskoe parofaznoe osazhdenie. Moskva: "Nauka", 2000.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

7

Mazumder, J. Theory and application of laser chemical vapor deposition. New York: Plenum Press, 1995.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

8

Handbook of chemical vapor deposition (CVD): Principles, technology, and applications. Park Ridge, N.J., U.S.A: Noyes Publications, 1992.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

9

Russell, C. James. CVD diamond and related superhard materials. Waltham, MA (1100 Winter St., Waltham 02154): Decision Resources, 1993.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

10

E, Spear Karl, Dismukes John P, and Electrochemical Society, eds. Synthetic diamond: Emerging CVD science and technology. New York: Wiley, 1994.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

More sources

Book chapters on the topic "Chemical vapour deposition (CVD)"

1

Sivaram, Srinivasan. "CVD of Semiconductors." In Chemical Vapor Deposition, 227–65. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_10.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Sivaram, Srinivasan. "Emerging CVD Techniques." In Chemical Vapor Deposition, 266–72. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_11.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Sivaram, Srinivasan. "CVD of Conductors." In Chemical Vapor Deposition, 163–203. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Sivaram, Srinivasan. "CVD of Dielectrics." In Chemical Vapor Deposition, 204–26. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Sivaram, Srinivasan. "Reactor Design for Thermal CVD." In Chemical Vapor Deposition, 94–118. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-4751-5_5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Fortin, Jeffrey B., and Toh-Ming Lu. "Other CVD Polymers." In Chemical Vapor Deposition Polymerization, 83–89. Boston, MA: Springer US, 2004. http://dx.doi.org/10.1007/978-1-4757-3901-5_7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Dobkin, Daniel M., and Michael K. Zuraw. "CVD Films." In Principles of Chemical Vapor Deposition, 195–245. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-017-0369-7_7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Dobkin, Daniel M., and Michael K. Zuraw. "CVD Reactors." In Principles of Chemical Vapor Deposition, 247–68. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-017-0369-7_8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Coppens, Kurt, and Eleonora Ferraris. "Chemical Vapor Deposition (CVD)." In CIRP Encyclopedia of Production Engineering, 1–5. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-642-35950-7_16770-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Yap, Yoke Khin, and Dongyan Zhang. "Chemical Vapor Deposition (CVD)." In Encyclopedia of Nanotechnology, 1–7. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-6178-0_345-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Chemical vapour deposition (CVD)"

1

Bennett, R. H., J. Simpson, and K. L. Lewis. "Radical Activated Chemical Vapour Deposition of Oxides." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/oic.1998.mb.3.

Full text

Abstract:

Traditional chemical vapour deposition processes, as widely used in the semiconductor industry, involve the introduction of a vapour phase organometallic precursor material to the reaction chamber, where decomposition of the vapour to form a solid film is triggered by heating the substrate. CVD methods for fabrication of optical thin film devices are becoming increasingly popular and there is a continuing drive towards plasma based CVD systems which promote deposition at lower substrate temperatures, allowing film growth on less temperature tolerant substrates.

APA, Harvard, Vancouver, ISO, and other styles

2

Heming, M., J. Hochhaus, J. Otto, and J. Segner. "Plasma Impulse Chemical Vapour Deposition - A Novel Technique for Optical Coatings." In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oic.1992.othc1.

Full text

Abstract:

Plasma assisted CVD techniques are increasingly important in semiconductor and wear resistant tool fabrication. Although the CVD process has the potential of low fabrication costs, applications in the optical coating field, however, are still rare up to now. The reason is mainly the limited layer thickness uniformity. This situation has changed now. In this paper we present a plasma impulse CVD (PICVD) process, which is capable of producing high quality optical layers at moderate costs.

APA, Harvard, Vancouver, ISO, and other styles

3

Zakaria, M., and S. M. Shariff. "Factors Affecting Carbon Nanotubes (CNTs) Synthesis via the Chemical Vapour Deposition (CVD) Method." In NANOTECHNOLOGY AND ITS APPLICATIONS: First Sharjah International Conference on Nanotechnology and Its Applications. AIP, 2007. http://dx.doi.org/10.1063/1.2776691.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Wahl, G., W. Nemetz, M. Giannozzi, S. Rushworth, D. Baxter, N. Archer, F. Cernuschi, and N. Boyle. "Chemical Vapour Deposition of TBC: An Alternative Process for Gas Turbine Components." In ASME Turbo Expo 2000: Power for Land, Sea, and Air. American Society of Mechanical Engineers, 2000. http://dx.doi.org/10.1115/2000-gt-0077.

Full text

Abstract:

This paper deals with a development of a new process for the deposition of Thermal Barrier Coatings (TBC) based on Chemical Vapour Deposition (CVD). The research program started in September 1998 under a BRITE/Euram III project. The CVD process involves the evaporation of zirconium and yttrium starting from metal-organic precursors and their reaction with oxygen in a hot wall reactor in order to deposit TBC layers. The influence of different deposition parameters such as evaporation temperature, pressure and substrate temperature on structure, deposition rate and process yield are described. The characterisation of different precursors behaviour is also described. Preliminary results, obtained with optimised conditions, have shown ZrO2-Y2O3 columnar layers with deposition rates of interest from an industrial point of view.

APA, Harvard, Vancouver, ISO, and other styles

5

Breiland, William G., Pauline Ho, and Michael E. Coltrin. "Laser Spectroscopy of Chemical Vapor Deposition." In Lasers in Material Diagnostics. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/lmd.1987.wd1.

Full text

Abstract:

Chemical vapor deposition (CVD) is an important industrial process used to deposit solid films for protective coatings and microelectronic applications. The CVD processes used in the fabrication of microelectronic devices are becoming more complex, and higher demands are being made on the resulting films. A fundamental understanding of the chemistry and physics of CVD may help meet future process control requirements, and could lead to novel deposition methods.

APA, Harvard, Vancouver, ISO, and other styles

6

George, Pradeep, Hae Chang Gea, and Yogesh Jaluria. "Optimization of Chemical Vapor Deposition Process." In ASME 2006 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/detc2006-99748.

Full text

Abstract:

Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of important design parameters and operating conditions are studied using numerical simulations. Then Compromise Response Surface Method (CRSM) is used to model the process over a range of susceptor temperature and inlet velocity of the reaction gases. The resulting response surface is used to optimize the CVD system.

APA, Harvard, Vancouver, ISO, and other styles

7

Dhonge, Baban P., Tom Mathews, S. Rajagopalan, S. Dash, S. Dhara, and A. K. Tyagi. "Cubic fluorite yttria stabilized zirconia (YSZ) film synthesis by combustion chemical vapour deposition(C-CVD)." In International Conference on Nanoscience, Engineering and Technology (ICONSET 2011). IEEE, 2011. http://dx.doi.org/10.1109/iconset.2011.6167913.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Sommer, M., L. Csajagi-Bertok, H. Oetzmann, F. Schmaderer, W. Becker, H. Klee, and B. Schulte. "Chemical vapor deposition (CVD) of high-Tc YBa2Cu3O7−δ films." In Superconductivity and its applications. AIP, 1992. http://dx.doi.org/10.1063/1.42066.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Shaw, Robert W., W. B. Whitten, and J. M. Ramsey. "Laser Spectroscopic Diagnostics for CVD Diamond Growth." In Laser Applications to Chemical Analysis. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/laca.1992.tha2.

Full text

Abstract:

Chemical vapor deposition (CVD) methods have become increasingly important for the manufacture of technologically-significant thin films. Numerous examples exist in the semiconductor and wear hardening coatings industries. The growth of polycrystalline diamond thin films from light hydrocarbons has recently received great interest, and several U. S. and foreign manufacturers have already begun to market products.

APA, Harvard, Vancouver, ISO, and other styles

10

O'Brien, J. J., and G. H. Atkinson. "Analysis of the Chemical Vapor Deposition of silicon by Intracavity Laser Spectroscopy." In Lasers in Material Diagnostics. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/lmd.1987.wd2.

Full text

Abstract:

Both the analysis and control of chemical vapor deposition (CVD) processes, are greatly aided by the availability of experimental methods for monitoring the gas phase precursors of the depositing material. The real time, in situ detection of intermediate reaction species is an almost essential element in studies directed at understanding the fundamental chemistry and physics of CVD processes. Such studies also can have a major impact on CVD processing practices.

APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Chemical vapour deposition (CVD)"

1

Breiland, W., and M. Coltrin. Si deposition rates in a two-dimensional CVD (chemical vapor deposition) reactor and comparisons with model calculations. Office of Scientific and Technical Information (OSTI), October 1989. http://dx.doi.org/10.2172/5370171.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Saunders, A., and A. Vecht. The preparation of thin films for photovoltaic conversion by novel MOCVD (metallorganic chemical vapour deposition) techniques: Annual subcontract report, 15 February 1985-15 April 1986. Office of Scientific and Technical Information (OSTI), October 1986. http://dx.doi.org/10.2172/6959200.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Alberi, Kirstin. Impurity Characterization in Device Quality Hot Filament Chemical Vapor Deposition (HFCVD) Grown 3C Silicon Carbide (3C-SiC): Cooperative Research and Development Final Report, CRADA Number CRD-17-00684. Office of Scientific and Technical Information (OSTI), August 2020. http://dx.doi.org/10.2172/1660238.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!